JP2013168396A5 - - Google Patents

Download PDF

Info

Publication number
JP2013168396A5
JP2013168396A5 JP2012029107A JP2012029107A JP2013168396A5 JP 2013168396 A5 JP2013168396 A5 JP 2013168396A5 JP 2012029107 A JP2012029107 A JP 2012029107A JP 2012029107 A JP2012029107 A JP 2012029107A JP 2013168396 A5 JP2013168396 A5 JP 2013168396A5
Authority
JP
Japan
Prior art keywords
electrode
charged particle
particle beam
hole
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2012029107A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013168396A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012029107A priority Critical patent/JP2013168396A/ja
Priority claimed from JP2012029107A external-priority patent/JP2013168396A/ja
Priority to US13/744,536 priority patent/US8558191B2/en
Publication of JP2013168396A publication Critical patent/JP2013168396A/ja
Publication of JP2013168396A5 publication Critical patent/JP2013168396A5/ja
Abandoned legal-status Critical Current

Links

JP2012029107A 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置 Abandoned JP2013168396A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012029107A JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置
US13/744,536 US8558191B2 (en) 2012-02-14 2013-01-18 Charged particle beam lens and charged particle beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012029107A JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置

Publications (2)

Publication Number Publication Date
JP2013168396A JP2013168396A (ja) 2013-08-29
JP2013168396A5 true JP2013168396A5 (https=) 2015-04-02

Family

ID=48944844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012029107A Abandoned JP2013168396A (ja) 2012-02-14 2012-02-14 静電型の荷電粒子線レンズ及び荷電粒子線装置

Country Status (2)

Country Link
US (1) US8558191B2 (https=)
JP (1) JP2013168396A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6500383B2 (ja) * 2014-10-03 2019-04-17 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
DE102019109308A1 (de) 2019-04-09 2020-10-15 Tdk Electronics Ag Keramisches Bauelement und Verfahren zur Herstellung des keramischen Bauelements
WO2021045972A1 (en) * 2019-09-03 2021-03-11 Tae Technologies, Inc. Systems, devices, and methods for contaminant resistant insulative structures
WO2022058252A1 (en) * 2020-09-17 2022-03-24 Asml Netherlands B.V. Objective lens array assembly, electron-optical system, electron-optical system array, method of focusing, objective lens arrangement
TW202441548A (zh) * 2022-11-23 2024-10-16 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子光學裝置、評估設備、評估樣本之方法
EP4376048A1 (en) * 2022-11-23 2024-05-29 ASML Netherlands B.V. Charged particle optical device, assessment apparatus, method of assessing a sample
JP2024135231A (ja) * 2023-03-22 2024-10-04 株式会社東芝 接合型配線部材

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209698A (en) * 1971-12-28 1980-06-24 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Transmission-type charged particle beam apparatus
US5006795A (en) * 1985-06-24 1991-04-09 Nippon Telephone and Telegraph Public Corporation Charged beam radiation apparatus
JP3166946B2 (ja) 1993-02-02 2001-05-14 日本電信電話株式会社 電子ビ―ム露光装置
JP4947841B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
WO2001075950A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, method for manufacturing multiaxis electron lens, and method for manufacturing semiconductor device
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
US6787780B2 (en) * 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
KR20020084288A (ko) * 2000-04-04 2002-11-04 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 반도체소자제조방법
WO2001075947A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
WO2001075951A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens and method for manufacturing semiconductor device
US7420164B2 (en) * 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
US7883839B2 (en) * 2005-12-08 2011-02-08 University Of Houston Method and apparatus for nano-pantography
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US8294351B2 (en) * 2008-03-04 2012-10-23 Panasonic Corporation Matrix-type cold-cathode electron source device
TWI479530B (zh) * 2008-10-01 2015-04-01 Mapper Lithography Ip Bv 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
DE102008062450B4 (de) * 2008-12-13 2012-05-03 Vistec Electron Beam Gmbh Anordnung zur Beleuchtung eines Substrats mit mehreren individuell geformten Partikelstrahlen zur hochauflösenden Lithographie von Strukturmustern
US8362441B2 (en) * 2009-10-09 2013-01-29 Mapper Lithography Ip B.V. Enhanced integrity projection lens assembly

Similar Documents

Publication Publication Date Title
JP2013168396A5 (https=)
JP2012195097A5 (https=)
JP2015233003A5 (ja) 二次電池及び電子機器
EP3378116A4 (en) ELECTRODE ARRANGEMENT AND FLUX BATTERY WITH IMPROVED ELECTROLYTE DISTRIBUTION
GB2547120A (en) A multi-reflecting time-of-flight analyzer
EP3411914A4 (en) LEAVED ELECTROLYTE-PARATORS FROM GRANITE
EP3515193A4 (en) ANTIMICROBIAL, CELL BREAK-BASED SURFACES COATED WITH METAL OXIDE NANOARRAYS
EP2897203A4 (en) COMPOUND ELECTRICITY ELECTRICITY ELECTRICITY OF ELECTRICITY AND ELECTRODE
EP3535827A4 (en) COMPENSATING A MULTI-CELL BATTERY
JP2015515738A5 (https=)
EP2919312A4 (en) BATTERY CELL WITH AN ELECTRODE ARRANGEMENT WITH CHANGING ALIGNMENT STRUCTURE
JP2010519681A5 (https=)
JP2015109264A5 (ja) 蓄電装置用電極、蓄電装置及び電子機器
JP2013101918A5 (https=)
JP2015533263A5 (https=)
MX340652B (es) Configuración intermedia de electrodo libre para generador de radiación nuclear en fondo de pozo.
EP3918347C0 (en) CURRENT TRANSFORMER WITH MAGNETIC FIELD DETECTOR MODULE
WO2013041615A3 (en) Ion trap
EA201491038A1 (ru) Нетепловая плазменная ячейка
Tayarani-N et al. Magnetic-inspired optimization algorithms: Operators and structures
FR2984010B1 (fr) Dispositif capacitif integre ayant une valeur capacitive thermiquement variable
MX377798B (es) Historial de presentaciones de aplicaciones de cada componente especifico.
JP2013008534A5 (https=)
JP2012195368A5 (https=)
JP2012256441A5 (https=)