JP2010519681A5 - - Google Patents
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- Publication number
- JP2010519681A5 JP2010519681A5 JP2009549482A JP2009549482A JP2010519681A5 JP 2010519681 A5 JP2010519681 A5 JP 2010519681A5 JP 2009549482 A JP2009549482 A JP 2009549482A JP 2009549482 A JP2009549482 A JP 2009549482A JP 2010519681 A5 JP2010519681 A5 JP 2010519681A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- mount
- opening
- movable mount
- attached
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 claims 4
- 238000010884 ion-beam technique Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0703044.8A GB0703044D0 (en) | 2007-02-16 | 2007-02-16 | Apparatus |
| PCT/GB2008/050098 WO2008099218A1 (en) | 2007-02-16 | 2008-02-15 | Ion beam accelerating apparatus with electrodes mounted in a movable mount |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010519681A JP2010519681A (ja) | 2010-06-03 |
| JP2010519681A5 true JP2010519681A5 (https=) | 2011-03-31 |
Family
ID=37908761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009549482A Pending JP2010519681A (ja) | 2007-02-16 | 2008-02-15 | 可動マウントに取り付けられた電極を備えるイオンビーム加速装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100044579A1 (https=) |
| EP (1) | EP2111630A1 (https=) |
| JP (1) | JP2010519681A (https=) |
| CN (1) | CN101542675A (https=) |
| GB (1) | GB0703044D0 (https=) |
| WO (1) | WO2008099218A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010017185A1 (en) | 2008-08-04 | 2010-02-11 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| DE102009048400A1 (de) * | 2009-10-06 | 2011-04-14 | Siemens Aktiengesellschaft | HF-Resonatorkavität und Beschleuniger |
| JP2013098003A (ja) * | 2011-10-31 | 2013-05-20 | Nissin Ion Equipment Co Ltd | イオンビーム引出し用電極およびこれを備えたイオン源 |
| MY191327A (en) | 2014-12-05 | 2022-06-16 | Agc Flat Glass Na Inc | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
| KR102272311B1 (ko) | 2014-12-05 | 2021-07-06 | 에이쥐씨 글래스 유럽 | 중공형 음극 플라즈마 소스 |
| US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
| US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| SG11201805171YA (en) * | 2015-12-18 | 2018-07-30 | Agc Flat Glass Na Inc | Hollow cathode ion source and method of extracting and accelerating ions |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| US9807864B1 (en) * | 2016-08-04 | 2017-10-31 | Varian Semiconductor Equipment Associates Inc. | Electrode, accelerator column and ion implantation apparatus including same |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4149055A (en) * | 1977-05-02 | 1979-04-10 | Hughes Aircraft Company | Focusing ion accelerator |
| JPS6043620B2 (ja) * | 1982-11-25 | 1985-09-28 | 日新ハイボルテージ株式会社 | マイクロ波イオン源 |
| JPS59207553A (ja) * | 1983-05-11 | 1984-11-24 | Hitachi Ltd | 荷電粒子線軸合せ装置 |
| JPH0746588B2 (ja) * | 1986-09-09 | 1995-05-17 | 日本電信電話株式会社 | マイクロ波イオン源 |
| JPH01204341A (ja) * | 1988-02-08 | 1989-08-16 | Japan Steel Works Ltd:The | イオンビーム装置 |
| US4933551A (en) * | 1989-06-05 | 1990-06-12 | The United State Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Reversal electron attachment ionizer for detection of trace species |
| US5365070A (en) * | 1992-04-29 | 1994-11-15 | The Regents Of The University Of California | Negative ion beam injection apparatus with magnetic shield and electron removal means |
| JPH0668806A (ja) * | 1992-08-21 | 1994-03-11 | Japan Steel Works Ltd:The | イオン源 |
| US5608773A (en) * | 1993-11-30 | 1997-03-04 | Canon Kabushiki Kaisha | Mask holding device, and an exposure apparatus and a device manufacturing method using the device |
| JP3243168B2 (ja) * | 1996-02-06 | 2002-01-07 | キヤノン株式会社 | 原版保持装置およびこれを用いた露光装置 |
| DE19851097A1 (de) * | 1997-11-05 | 1999-05-06 | Ims Ionen Mikrofab Syst | Mechanisch einstellbare, elektrostatische Linse |
| JPH11283552A (ja) * | 1998-03-31 | 1999-10-15 | Tadamoto Tamai | イオン注入装置、イオン注入方法、イオンビーム源、及び可変スリット機構 |
| US6458723B1 (en) * | 1999-06-24 | 2002-10-01 | Silicon Genesis Corporation | High temperature implant apparatus |
| WO2001043157A1 (en) * | 1999-12-13 | 2001-06-14 | Semequip, Inc. | Ion implantation ion source, system and method |
| US6501078B1 (en) * | 2000-03-16 | 2002-12-31 | Applied Materials, Inc. | Ion extraction assembly |
| CN1311508C (zh) * | 2000-11-20 | 2007-04-18 | 瓦里安半导体设备联合公司 | 用于产生低能量离子束的离子光学装置和方法 |
| US6768120B2 (en) * | 2001-08-31 | 2004-07-27 | The Regents Of The University Of California | Focused electron and ion beam systems |
| US6936981B2 (en) * | 2002-11-08 | 2005-08-30 | Applied Materials, Inc. | Retarding electron beams in multiple electron beam pattern generation |
| JP3858092B2 (ja) | 2002-11-14 | 2006-12-13 | 独立行政法人航空宇宙技術研究所 | イオン抽出装置 |
| US7145157B2 (en) * | 2003-09-11 | 2006-12-05 | Applied Materials, Inc. | Kinematic ion implanter electrode mounting |
| JP4316394B2 (ja) * | 2004-01-21 | 2009-08-19 | 株式会社東芝 | 荷電ビーム装置 |
| JP5068928B2 (ja) * | 2004-11-30 | 2012-11-07 | 株式会社Ｓｅｎ | 低エネルギービーム増大化方法及びビーム照射装置 |
| US7279687B2 (en) * | 2005-08-26 | 2007-10-09 | Varian Semiconductor Equipment Associates, Inc. | Technique for implementing a variable aperture lens in an ion implanter |
| WO2008000836A2 (en) | 2006-06-30 | 2008-01-03 | Nordiko Technical Services Limited | Apparatus for accelerating an ion beam |
-
2007
- 2007-02-16 GB GBGB0703044.8A patent/GB0703044D0/en not_active Ceased
-
2008
- 2008-02-15 CN CNA200880000419XA patent/CN101542675A/zh active Pending
- 2008-02-15 US US12/304,251 patent/US20100044579A1/en not_active Abandoned
- 2008-02-15 WO PCT/GB2008/050098 patent/WO2008099218A1/en not_active Ceased
- 2008-02-15 EP EP08709618A patent/EP2111630A1/en not_active Withdrawn
- 2008-02-15 JP JP2009549482A patent/JP2010519681A/ja active Pending
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