JP2013165253A - Joining device, joining method, semiconductor device, and mems device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a joining device capable of reducing cost and a technology related thereto.SOLUTION: The joining device includes two holding sections 12 and 22 and an irradiation section 11. The two holding sections 12 and 22 hold both of objects 91 and 92 to be joined in a state in which the objects are separated from each other and are opposed to each other. The irradiation section 11 irradiates both of the objects 91 and 92 to be joined held by the two holding sections 12 and 22 with energy particles for surface activation processing individually and sequentially. After that, the joining means makes the two holding sections 12 and 22 be relatively close to each other and joins the objects 91 and 92 to be joined together.

Description

  The present invention relates to a bonding technique for activating and bonding a bonding surface of an object to be bonded (such as a silicon wafer).

  There is a joining technique in which the two objects to be joined are joined to each other after the surface activation treatment is performed on each of the two objects to be joined (see Patent Documents 1 and 2).

  Patent Document 1 describes a joining apparatus as shown in FIG. Specifically, the lower holding unit 12 that holds the lower workpiece 91 and the upper holding unit 22 that holds the upper workpiece 92 are provided, and two beam irradiation units 901 and 902 are provided. Is provided. One beam irradiation unit 901 is an irradiation unit dedicated to the stage 12 and irradiates the workpiece 91 held on the stage 12 with a beam. The other beam irradiation unit 902 is an irradiation unit dedicated to the head 22 and irradiates the workpiece 92 held by the head 22 with a beam. The beam irradiation unit 901 is fixed at a relatively upper position, and the beam irradiation unit 902 is fixed at a relatively lower position.

  According to the joining apparatus according to such a conventional technique (also referred to as the first conventional technique), it is possible to perform the surface activation process on both the objects to be joined 91 and 92 at the same time.

  Further, Patent Document 2 describes a technique (also referred to as a second conventional technique) for performing surface activation treatment by irradiation with an ion gun from the side with respect to an object to be bonded, which is disposed oppositely. In this technique, the opposite surface (chamber side wall) of the irradiation unit (ion gun irradiation unit) is etched, and the surrounding chamber wall is also etched by spreading the beam without directivity. And after the metal scraped off by such etching is scattered, it adheres to a to-be-joined object. Such technology may be suitable for devices that want to deposit metal, but in many devices, insulation is important and such metal deposition (called “metal contamination”) is a problem. Often becomes.

JP-A-10-92702 JP 2007-324195 A

  By the way, in the first prior art apparatus, since it is necessary to provide a relatively large number of very expensive beam irradiation units (two in the above), there is a problem that the apparatus cost becomes very high.

  Then, this invention makes it a subject to provide the joining apparatus which can suppress cost, and the technique relevant to it.

  In order to solve the above-mentioned problem, the invention of claim 1 is a bonding apparatus, wherein the first holding unit that holds the first object to be bonded, the first object to be bonded, and the first object to be bonded. A second holding portion that holds the second workpiece in a state of facing the workpiece, and the first and second holding portions held by the first holding portion. Irradiation unit that individually and sequentially irradiates surface activated energy particles to both objects to be bonded to the second object to be held, the first holding part, and the second And a holding means for bringing the first object to be bonded and the second object to be bonded into close contact with each other.

  According to a second aspect of the present invention, in the joining apparatus according to the first aspect of the invention, the first holding unit, the second holding unit, and the irradiation unit are arranged in the same chamber.

  According to a third aspect of the present invention, in the joining device according to the first or second aspect of the present invention, the first holding portion is separated from the first holding portion in the separating direction of the first holding portion and the second holding portion. Driving means for moving the irradiating unit between a first position on the second holding unit side and a second position on the first holding unit side spaced apart from the second holding unit; The irradiation unit irradiates energy particles from the first position toward the first object to be bonded, and irradiates energy particles from the second position toward the second object to be bonded. It is characterized by.

  According to a fourth aspect of the present invention, there is provided a bonding apparatus according to any one of the first to third aspects, wherein the irradiation unit is swung around a rotation axis parallel to a bonding surface of the first object to be bonded. The irradiating section irradiates energetic particles toward the first object to be joined while being swung around the rotation axis by the swinging means.

  According to a fifth aspect of the present invention, in the joining device according to the fourth aspect of the present invention, the swing speed of the irradiation unit is a distance between the irradiation unit and an irradiation region irradiated with energetic particles by the irradiation unit. It is characterized by being changed accordingly.

  According to a sixth aspect of the present invention, in the joining apparatus according to the fourth or fifth aspect of the present invention, the swing speed of the irradiation unit depends on the incident angle of the energetic particles irradiated by the irradiation unit with respect to the irradiation target surface. It is characterized by being changed.

  According to a seventh aspect of the present invention, in the bonding apparatus according to the fourth aspect of the present invention, the swinging speed of the irradiation unit is changed by the irradiation unit to energetic particles as the swinging angle is changed in the swinging operation of the irradiation unit. Is changed so that the irradiation intensity of energetic particles in the irradiation region irradiated with is inversely proportional to the moving speed of the irradiation region accompanying the rocking motion.

  According to an eighth aspect of the present invention, in the joining apparatus according to any of the fourth to seventh aspects, the irradiation unit includes a plurality of unit irradiation units arranged in a direction parallel to the rotation axis. Features.

  According to a ninth aspect of the present invention, in the bonding apparatus according to the eighth aspect of the present invention, the bonding surface of the first object to be bonded is approximated by a region obtained by combining a plurality of band-shaped regions respectively corresponding to the plurality of unit irradiation portions. And in the irradiation process with respect to the said 1st to-be-joined object, each of these unit irradiation parts irradiates energy particle | grains toward a charge strip | belt area | region among these strip | belt-shaped area | regions, It is characterized by the above-mentioned.

  According to a tenth aspect of the present invention, in the joining apparatus according to the ninth aspect of the invention, the plurality of unit irradiation units are provided separately in a plurality of irradiation units, and the plurality of irradiation units are independent of each other. The rocking motion can be performed.

  An eleventh aspect of the present invention is the bonding apparatus according to the ninth aspect of the present invention, wherein the plurality of unit irradiation units are provided in one irradiation unit and are simultaneously swung, By switching between the non-irradiation state, the energetic particles are irradiated toward each of the plurality of band-shaped areas.

  According to a twelfth aspect of the present invention, in the joining apparatus according to any one of the first to eleventh aspects, the irradiation unit includes the first holding unit and the second holding unit. A surface activation process is performed on the first object to be bonded to the one holding part in a state where the first object to be bonded is held by one of the holding parts. By irradiating the target member with energetic particles in a state where the target member for sputtering treatment to the first object to be bonded is held by the other holding portion of the both holding portions. A sputtering process is performed on the first object to be bonded.

  According to a thirteenth aspect of the present invention, in the bonding apparatus according to the twelfth aspect of the present invention, the irradiation unit is subjected to the sputtering process on the first object to be bonded and is held by the other holding unit. After the target member is removed, both objects to be bonded of the first object to be bonded held by the first holding part and the second object to be bonded held by the second holding part Is characterized in that energy particles for surface activation treatment are individually and sequentially irradiated.

  A fourteenth aspect of the present invention is the bonding apparatus according to any one of the first to third aspects of the present invention, wherein the irradiation unit swings around a rotation axis parallel to the bonding surface of the first object to be bonded. The irradiation unit is in a state in which the first object to be joined is held by one holding unit of both the first holding unit and the second holding unit. Then, a surface activation process is performed on the first object to be bonded, the first object to be bonded is held by the one holding portion, and a target member for the sputtering process for the first object to be bonded is the By irradiating the target member with energetic particles while being swung around the rotation axis by the swinging means while being held by the other holding portion of the both holding portions. Sputtering treatment to the object to be joined, The rocking speed of the irradiation unit when the energetic particles are irradiated to the first region of the target member that is relatively close to the irradiation unit is the second region of the target member. The region is set to be larger than the swinging speed of the irradiation unit when the energetic particles are irradiated to a second region relatively far from the irradiation unit.

  According to a fifteenth aspect of the present invention, in the joining apparatus according to any one of the first to eleventh aspects, the irradiation unit is a holding unit of the first holding unit and the second holding unit. By irradiating energetic particles toward a target member arranged in the vicinity of one holding part, the constituent material of the target member together with the energy particles reflected by the target member is changed to the other of the holding parts. Sputtering treatment for the sputtering object by being scattered toward the sputtering object that is one of the first object to be bonded and the second object to be bonded, which is the sputtering object that is held by the holding unit. It is characterized by performing.

  According to a sixteenth aspect of the present invention, in the joining apparatus according to the fifteenth aspect of the invention, the irradiation unit is directed toward the target member while moving in the separating direction of the two holding units and changing the posture angle of the irradiation unit. Irradiating the target particles together with the energy particles reflected by the target member to scatter the constituent material of the target member toward the target sputtering target, and performing the sputtering process on the target sputtering target. .

  According to a seventeenth aspect of the present invention, in the joining apparatus according to the fifteenth aspect of the present invention, the irradiation unit irradiates the target member with energetic particles while changing a posture angle of the target member. The constituent material of the target member is scattered toward the sputtering object together with the energy particles reflected in step 1, and the sputtering process is performed on the sputtering object.

  According to an eighteenth aspect of the present invention, in the bonding apparatus according to any one of the first to seventeenth aspects, the irradiation unit includes an atomic beam irradiation unit that irradiates an atomic beam.

  A nineteenth aspect of the present invention is the bonding apparatus according to any one of the first to eleventh aspects, wherein the bonding apparatus is provided between the irradiation unit and the first holding unit, and the first to the first irradiation unit. It further includes a blocking member that blocks irradiation of the energetic particles to the holding portion.

  According to a twentieth aspect of the present invention, in the joining apparatus according to the nineteenth aspect of the invention, the irradiation unit is not directed to the second holding unit until the initial emission state of the energetic particles is stabilized, but the first The energetic particles are irradiated toward the blocking member provided between the holding unit and the irradiation unit.

  According to a twenty-first aspect of the present invention, in the joining device according to the twentieth aspect, the blocking member is separated from the second holding portion in the separating direction of the first holding portion and the second holding portion. Provided at a predetermined position on the first holding unit side and between the irradiation unit and the first holding unit, from the irradiation unit until the initial emission state of the energetic particles is stabilized. The irradiation unit is configured to block irradiation of the energetic particles to the holding unit, and the irradiation unit uses, as a target member, the blocking member whose posture angle is changed after the initial release state of the energetic particles is stabilized. The position and orientation of the part are changed, the energy particles are irradiated toward the target member, and the constituent material of the target member is changed together with the energy particles reflected by the target member. Sputtering object toward the sputtering object which is one of the first object to be bonded and the second object to be bonded, which is the sputtering object held by the second holding unit, and is applied to the sputtering object. Sputtering treatment is performed.

  According to a twenty-second aspect of the present invention, in the joining device according to the nineteenth aspect of the invention, the blocking member is separated from the second holding portion in the separating direction of the first holding portion and the second holding portion. A predetermined position on the first holding unit side, provided at a predetermined position between the irradiation unit and the first holding unit, and the irradiation unit is moved from the predetermined position to the second holding unit. The energetic particles are irradiated toward the surface.

  According to a twenty-third aspect of the present invention, in the joining device according to the twentieth aspect, the blocking member is separated from the second holding portion in the separating direction of the first holding portion and the second holding portion. A predetermined position on the first holding unit side, provided at a predetermined position between the irradiating unit and the first holding unit, the irradiating unit after the initial release state of the energetic particles is stabilized By changing the irradiation angle of the irradiation unit, the irradiation of the energetic particles to the first holding unit is held by the second holding unit while maintaining the state of being blocked by the blocking member The energetic particles are irradiated toward the second object to be bonded.

  The invention of claim 24 is a joining method, wherein: a) a first object to be joined held by a first holding part of the joining apparatus by one irradiation part provided in the joining apparatus; Energy with respect to both objects to be bonded with the second object held by the second holding portion of the bonding apparatus in a state of being separated from one object to be bonded and facing the first object to be bonded Irradiating the particles individually and sequentially; b) bringing the first holding part and the second holding part relatively close together, so that the first object to be joined and the second object Joining the joined article.

  According to a twenty-fifth aspect of the present invention, in the joining method according to the twenty-fourth aspect, the step a) includes: a-1) from a first position closer to the second holding portion side than the first holding portion. The surface activation treatment is performed on the first object by irradiating the first object to be bonded held by the first holding part with energetic particles by the one irradiation part. And a-2) in the direction of separation between the first holding part and the second holding part, from the first position to the first holding part side than the second holding part. A step of moving the one irradiation unit to a second position spaced apart from each other; a-3) from the second position toward the second object to be joined held by the second holding unit; By irradiating energetic particles with the one irradiation unit, the second bonded object And having the steps of: subjecting a heat treatment with respect to.

  According to a twenty-sixth aspect of the present invention, in the joining method according to the twenty-fourth or twenty-fifth aspect of the invention, c) prior to the step a), either the first article to be joined or the second article to be joined. The step c) includes a step of performing a sputtering process on the sputtering object, and c-1) one holding portion of both the first holding portion and the second holding portion. Applying a surface activation treatment by irradiating energetic particles with the one irradiating part toward the sputtering object held in the c, and c-2) a target member for the sputtering treatment of the two holding parts. Along with the energy particles reflected by the target member by irradiating the target member with the energy particles while being held by another holding unit Serial and the constituent material of the target member is scattered toward the sputtering target, characterized by having the steps of: subjecting a sputtering process on the sputtering target.

  According to a twenty-seventh aspect of the present invention, in the joining method according to the twenty-sixth aspect of the present invention, in the step c-2), the one irradiation unit is swung around a rotation axis parallel to the surface of the sputtering object. The first irradiation unit is irradiated with energetic particles toward the target member while moving, and is a first region on the target member that is relatively close to the first irradiation unit. The rocking speed of the one irradiation part when the energetic particles are irradiated to the second region of the target member is a second area of the target member that is relatively far from the one irradiation part. It is set to be larger than the rocking speed of the one irradiation unit when the particles are irradiated.

  A twenty-eighth aspect of the present invention is a semiconductor device bonded and manufactured by the bonding method according to any of the twenty-fourth to twenty-seventh aspects.

  The invention of claim 29 is a MEMS device bonded and manufactured by the bonding method according to any one of claims 24 to 27.

  According to the invention described in claims 1 to 23, the irradiation of energetic particles is individually and sequentially performed on two different objects to be bonded by one irradiation unit, and the surface activity on both objects to be bonded is determined. Since the conversion process is executed, the number of expensive irradiation units can be reduced. Therefore, cost can be reduced.

  In particular, according to the second aspect, the first holding unit, the second holding unit, and the irradiation unit are arranged in the same chamber, and both the objects to be joined are not carried out of the chamber and the first holding unit. Irradiation processing by the irradiation unit is performed on the objects to be bonded respectively held by the second holding unit. Therefore, since both objects to be joined are joined inside the chamber without being carried out of the chamber, they can be joined in a short time in a high vacuum state and float on the surface activated surface. It is possible to prevent particles from being re-adsorbed and preventing good bonding. As a result, both objects to be joined are joined in a very good state, and a high joining strength can be obtained.

  In particular, according to the third aspect of the present invention, the irradiation unit includes a first position on the second holding unit side that is separated from the first holding unit and a first holding unit that is separated from the second holding unit. The first position is moved between the first position and the first object to be irradiated with energetic particles, and the second position is directed to the second object to be energized. Therefore, energetic particles can be irradiated relatively from the front with respect to each of the first bonded object and the second bonded object. Therefore, it is possible to improve the uniformity of irradiation within the bonding surface.

  In particular, according to the invention described in claim 4, the irradiation unit irradiates the first bonded object with energetic particles while being swung around the rotation axis by the swinging means. It is possible to improve the uniformity of irradiation inside. In addition, it is possible to perform a uniform irradiation process even on a relatively large workpiece.

  In particular, according to the inventions according to claims 5, 6, and 7, it is possible to further uniform the irradiation amount on the bonding surface.

  In particular, according to the invention described in claim 8, it is possible to expand the irradiation target region in the arrangement direction of the unit irradiation units.

  In particular, according to the invention described in claim 9, the bonding surface of the first object to be bonded is approximated by a region obtained by combining a plurality of band-like regions respectively corresponding to the plurality of unit irradiation portions, and a plurality of unit irradiations are performed. Since each part irradiates energetic particles toward the assigned band-shaped region among the plurality of band-shaped regions, it is possible to suppress the occurrence of metal contamination caused by unnecessary beam irradiation on the peripheral members.

  In particular, according to the twelfth aspect of the present invention, it is possible to perform the sputtering process in the bonding apparatus.

  In particular, according to the invention described in claim 15, it is possible to suppress metal contamination.

  In particular, according to the invention described in claim 18, it is possible to suppress the beam irradiation to an unnecessary region by using the atomic beam irradiation having high directivity. As a result, metal contamination that etches the chamber wall and causes impurities to adhere to the object to be bonded can also be suppressed.

  In particular, according to the invention described in claim 19, since the irradiation of the energy particles from the irradiation unit to the first holding unit is blocked by the blocking member, unnecessary energy particles are irradiated to the first holding unit. It can be avoided or suppressed.

  In particular, according to the invention described in claim 20, it is possible to avoid or suppress irradiation of unnecessary energy particles to both the first holding unit and the second holding unit.

  In particular, according to the invention as set forth in claim 21, the sputtering process can be performed using the blocking member as the target member.

  In particular, according to the invention described in claim 22 and claim 23, the second holding part is irradiated with energy particles while avoiding or suppressing irradiation of unnecessary energy particles to the first holding part. be able to.

  Further, according to the invention described in claims 24 to 29, the irradiation of energetic particles is individually and sequentially performed on two different objects by one irradiation unit, and both objects are bonded. Since the surface activation process is executed, the number of expensive irradiation units can be reduced. Therefore, manufacturing costs can be reduced.

It is a figure which shows schematic structure of the joining apparatus which concerns on 1st Embodiment. It is a figure which shows schematic structure of the joining apparatus which concerns on 1st Embodiment. It is a figure which shows the structure of the drive mechanism of a beam irradiation part. It is a figure which shows the two alignment marks attached | subjected to one to-be-joined object. It is a figure which shows the two alignment marks attached | subjected to the other to-be-joined thing. It is a figure which shows the picked-up image regarding both to-be-joined objects. It is a figure which shows the state which 1 set of marks have mutually shifted | deviated. It is a figure which shows the alignment operation just before joining. It is a flowchart which shows the operation | movement which concerns on 1st Embodiment. It is a figure which shows a preparation state. It is a figure which shows the surface activation process with respect to a to-be-joined object below. It is a figure which shows the movement operation | movement of a beam irradiation part. It is a figure which shows the surface activation process with respect to an upper to-be-joined object. It is a figure which shows joining operation | movement of both to-be-joined objects. It is a flowchart which shows joining operation | movement which concerns on 2nd Embodiment. It is a figure which shows a mode that one to-be-joined thing is hold | maintained at a head. It is a figure which shows a mode that a target member is hold | maintained on a stage. It is a figure which shows the surface activation process with respect to a to-be-joined object. It is a figure which shows the movement operation | movement of a beam irradiation part. It is a figure which shows the sputtering process with respect to a to-be-joined object. It is a figure which shows a mode that a to-be-joined object is conveyed to the inversion part. It is a figure which shows a mode that a target member is removed. It is a figure which shows a mode that a to-be-joined object is reversed. It is a figure which shows a mode that the other to-be-joined thing is hold | maintained at a head. It is a figure which shows a mode that a target member is hold | maintained on a stage. It is a figure which shows the movement operation | movement of a beam irradiation part. It is a figure which shows the surface activation process with respect to a to-be-joined object. It is a figure which shows the movement operation | movement of a beam irradiation part. It is a figure which shows the sputtering process with respect to a to-be-joined object. It is a figure which shows a mode that a target member is removed. It is a figure which shows a mode that the to-be-joined object after inversion is hold | maintained on a stage. It is a figure which shows a mode that the surface activation process is performed in the joining apparatus which concerns on 3rd Embodiment. It is a figure which shows the movement operation | movement of a beam irradiation part. It is a figure which shows a mode that the surface activation process is performed. It is a figure which shows the mode of the surface activation process which concerns on a modification. It is a figure which shows the movement operation | movement of a beam irradiation part. It is a figure which shows the mode of the surface activation process which concerns on a modification. It is a figure which shows a double beam irradiation part. It is a figure which shows rocking | fluctuation irradiation by the beam irradiation part which concerns on 4th Embodiment. It is a figure which shows the mode of the rocking | fluctuation irradiation by a beam irradiation part. It is a figure which shows the mode of the rocking | fluctuation irradiation by a beam irradiation part. It is a figure which shows the beam irradiation part of the joining apparatus which concerns on 5th Embodiment. It is a figure which shows the beam irradiation area | region in a to-be-joined object. It is a figure which shows the beam irradiation part of the joining apparatus which concerns on a modification. It is a figure which shows the beam irradiation area | region in a to-be-joined object. It is a figure which shows the mode of the sputtering process which concerns on 6th Embodiment. It is a schematic top view which shows arrangement | positioning etc. of the target member in the apparatus which concerns on 6th Embodiment. It is the schematic which shows the mode of sputtering processing. It is a figure which shows the sputtering process accompanied by rocking | fluctuation operation | movement of a beam irradiation part. It is a figure which shows the sputtering process accompanied by rocking | fluctuation operation | movement of a beam irradiation part. It is a figure which shows the inside of the joining apparatus which concerns on 7th Embodiment. It is a figure which shows the inside of the joining apparatus which concerns on 7th Embodiment. It is a figure which shows the inside of the joining apparatus which concerns on 7th Embodiment. It is a figure which shows the inside of the joining apparatus which concerns on 7th Embodiment. It is a figure which shows the inside of the joining apparatus which concerns on 8th Embodiment. It is a figure which shows the inside of the joining apparatus which concerns on 8th Embodiment. It is a figure which shows a mode that sputtering deposit is unevenly distributed by a to-be-joined object. It is a figure which shows the state which the target member inclined. It is a figure which shows the inside of the joining apparatus which concerns on 9th Embodiment. It is a figure which shows the inside of the joining apparatus which concerns on 9th Embodiment. It is a figure which shows a parallel link type drive mechanism. It is a figure which shows a rotational drive mechanism. It is a figure which shows a modification. It is a figure which shows a prior art (1st prior art).

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<1. First Embodiment>
<1-1. Device configuration>
<Overview>
1 and 2 are views showing a joining device 1 (also referred to as 1A) according to a first embodiment of the present invention. 1 and 2 are longitudinal sectional views of the joining apparatus 1, and FIGS. 1 and 2 are longitudinal sectional views in different longitudinal sections. In each figure, directions and the like are shown using an XYZ orthogonal coordinate system for convenience.

  The bonding apparatus 1 activates both the bonded surface of the bonded object 91 and the bonded surface of the bonded object 92 by atomic beam irradiation or the like in a chamber (vacuum chamber) 2 under reduced pressure. , 92 are joined together. According to the bonding apparatus 1, it is possible to perform surface activation processing on the bonding surfaces of both the objects to be bonded 91 and 92 and perform solid-phase bonding of the both objects to be bonded 91 and 92.

The bonding apparatus 1 includes a vacuum chamber 2 that is a processing space for both objects to be bonded 91 and 92, a load lock chamber 3 connected to the vacuum chamber 2, and a reversing unit 4 (see FIG. 2). The vacuum chamber 2 is connected to a vacuum pump via an exhaust pipe and an exhaust valve. The vacuum chamber 2 is brought into a vacuum state by reducing (reducing pressure) the pressure in the vacuum chamber 2 in accordance with the suction operation of the vacuum pump. The load lock chamber 3 and the inversion unit 4 are similarly evacuated. However, the degree of vacuum of the vacuum chamber 2 is higher than that of the load lock chamber 3 and the reversing unit 4 (for example, “high vacuum”) (for example, “ultra high vacuum” (10 ⁻⁸ Pa (pascal)). 10 to ^{6 −6} Pa (pascal)))).

<Head and stage>
The bonding apparatus 1 includes a relatively upper head 22 and a relatively lower stage 12 in the vacuum chamber 2. The head 22 is a holding member (holding portion) that holds the upper workpiece 92, and the stage 12 is a holding member (holding portion) that holds the lower workpiece 91. The head 22 has a holding mechanism (such as an electrostatic chuck) on its lower surface side, and the stage 12 has a holding mechanism (such as an electrostatic chuck) on its upper surface side. Both the objects to be joined 91 and 92 are held in parallel to a substantially horizontal plane by the stage 12 and the head 22 (specifically, respective holding mechanisms).

  The head 22 is moved (lifted / lowered) in the Z direction by a Z-axis lifting / lowering drive mechanism 26 (FIG. 1). As the stage 12 and the head 22 move relative to each other in the Z direction, the workpiece 91 held on the stage 12 and the workpiece 92 held on the head 22 come into contact with each other and are pressed and bonded. . That is, the objects to be joined 91 and 92 are brought into contact with each other and pressurized by the head 22 and the Z-axis elevating drive mechanism 26 and the like. The Z-axis raising / lowering drive mechanism 26 can also control the applied pressure at the time of joining based on a signal detected by a pressure detection sensor (load cell or the like).

  The stage 12 can move (translate) in the X direction and the Y direction according to the driving of the position adjustment mechanism 50. The stage 12 can also move (rotate) in the θ direction (rotation direction around an axis parallel to the Z axis) in accordance with driving of the position adjustment mechanism 50.

<Beam irradiation unit>
In addition, the bonding apparatus 1 also performs a surface activation process for activating the surfaces of the objects to be bonded 91 and 92 before bonding the two objects to be bonded 91 and 92. Therefore, this joining device 1 is also expressed as a surface activation device. Specifically, the bonding apparatus 1 has a beam irradiation unit 11. By applying various energetic particles (also referred to as energy waves or energy beams (or simply beams)) to the surfaces of both the objects to be bonded 91 and 92 by the beam irradiation unit 11, The surface impurities are removed (cleaned) and the surface is activated. More specifically, for example, a surface activation process is performed by an atomic beam process using argon.

  In the bonding apparatus 1, surface activation processing or the like is performed using a single beam irradiation unit 11. As shown in FIG. 1, the beam irradiation unit 11 is provided in the vacuum chamber 2 on the right side (+ X side) side of the holding units 12 and 22 of the objects to be bonded 91 and 92.

  Further, the beam irradiation unit 11 activates the bonding surface of the object to be bonded by accelerating an ionized specific material (for example, argon) with an electric field and releasing the specific material toward the bonding surface of the object to be bonded. . In other words, the beam irradiation unit 11 activates the bonding surfaces of both the objects to be bonded 91 and 92 by irradiating energy waves (also referred to as energy particles) toward the bonding surface of the objects to be bonded. . That is, the beam irradiation unit 11 functions as a beam irradiation unit for surface activation processing. Therefore, the beam irradiation unit 11 is also referred to as an energetic particle irradiation unit.

  Here, a beam irradiation process is illustrated as the surface activation process, and an atomic beam irradiation process (in other words, an atomic beam irradiation section as the beam irradiation section 11) is illustrated as the beam irradiation process, but the present invention is not limited thereto. Not.

Specifically, ion beam irradiation processing or the like may be employed as the beam irradiation processing.
Here, in the atomic beam irradiation process, after ionized specific substances (such as argon) are accelerated by an electric field, they are immediately combined with the charges supplied in the beam irradiation unit, and the electrical characteristics thereof are neutralized. And the specific substance electrically neutralized goes to a to-be-joined object at high speed.

  On the other hand, in ion beam irradiation, an ionized specific substance (argon or the like) is released while being ionized after being accelerated by an electric field. And the said specific substance heads to a to-be-joined object with an ion state. Note that argon or the like in an ionic state is electrically neutralized by being combined with electric charges before reaching the surface of the object to be bonded.

  As described above, the timing of electrical neutralization differs between an ion beam and an atom beam, but they are common in that an ionized specific substance (such as argon) is accelerated by an electric field. And it is common also in the point that a surface activation process is performed when the accelerated specific substance collides with a joining surface at high speed.

  In addition, here, argon is mainly exemplified as a specific substance used for beam irradiation (energy particle irradiation), but is not limited thereto. For example, other inert gases (such as krypton (Kr) or xenon (Xe)) may be used as a specific substance in energy particle irradiation.

  The beam irradiation unit 11 can be translated in the vertical direction by a driving mechanism 60 (specifically, its translational movement mechanism), and parallel to the Y axis by the driving mechanism 60 (specifically, its swinging mechanism). It is also possible to swing (rotate) around a simple axis AY.

  In accordance with the driving operation by the driving mechanism 60, the beam irradiating unit 11 is between the relatively upper position PG1 (see FIG. 10) and the relatively lower position PG2 (see FIG. 12) in the vertical direction (Z direction). It is possible to move. The position PG1 is a position on the head 22 side that is spaced upward from the stage 12 in the Z direction. The position PG1 is also expressed as a position closer to the head 22 than the stage 12 in the Z direction. On the other hand, the position PG2 is a position on the stage 12 side that is spaced downward from the head 22 in the Z direction. The position PG2 is also expressed as a position closer to the stage 12 than the head 22 in the Z direction. The Z direction (vertical direction) is also expressed as a separation direction or a facing direction between the stage 12 and the head 22.

  Further, the beam irradiation unit 11 can swing around an axis AY parallel to the Y axis in accordance with a driving operation by the driving mechanism 60. When the beam irradiation unit 11 swings about the axis AU, the emission direction of the beam irradiated from the beam irradiation port of the beam irradiation unit 11 is changed.

  As shown in FIG. 10, when the beam irradiation unit 11 is disposed at the position PG1 above the + X side in the vacuum chamber 2, the attitude angle (oscillation) of the beam irradiation unit 11 is set so that the beam irradiation unit 11 faces obliquely downward. Angle) is adjusted. Thereby, the beam irradiation unit 11 can irradiate the beam (energy particles) obliquely downward from the upper position PG1 (specifically, toward the bonding surface of the workpiece 91 held by the stage 12). it can.

  On the other hand, as shown in FIG. 12, when the beam irradiation unit 11 is arranged at the position PG <b> 2 below the + X side in the vacuum chamber 2, the attitude angle of the beam irradiation unit 11 so that the beam irradiation unit 11 faces obliquely upward. Is adjusted. As a result, the beam irradiation unit 11 can irradiate the beam (energy particles) obliquely upward from the lower position PG2 (specifically, toward the bonding surface of the workpiece 92 held by the head 22). it can.

  Here, as shown in the detailed view of FIG. 3, the drive mechanism 60 (also referred to as 60A) is configured as a drive mechanism using a double shaft 65 (also referred to as a double shaft type drive mechanism). Translational movement of the beam irradiation unit 11 in the vertical direction (Z direction) is realized by the vertical movement of the outer circumferential side tubular shaft (vertical movable portion) 63 of the double shaft 65 extending in the vertical direction. The vertical position of the irradiation unit 11 is changed. Further, the vertical movement of the inner peripheral side shaft (vertically movable part) 64 of the double shafts realizes a rotational motion (oscillation motion) around the predetermined axis AY of the beam irradiation unit 11, and the attitude angle of the beam irradiation unit 11. Is changed.

  The drive mechanism 60 includes a Z direction first drive unit 61 and a Z direction second drive unit 62. The Z direction first drive unit 61 drives the outer circumferential side tubular shaft 63 in the Z direction (vertical direction), and the Z direction second drive unit 62 drives the inner circumference side cylindrical shaft portion in the Z direction (vertical direction). To do.

  Specifically, the outer circumferential tubular shaft 63 is connected to the Z-direction first drive unit 61 via the connecting portion 67, and the Z-direction (up and down) according to the Z-direction drive operation by the Z-direction first drive unit 61. Direction). The beam irradiation unit 11 connected to the lower end side of the outer circumferential tubular shaft 63 is moved in the vertical direction according to the driving operation of the first driving unit 61 in the Z direction. Specifically, the beam irradiation unit 11 moves between a relatively upper position PG1 and a relatively lower position PG2 (see also FIG. 12). In addition, the beam irradiation part 11 is connected with respect to the outer peripheral side circular tubular shaft 63 in the state which can be rotated around the axis AY.

  The inner peripheral side shaft 64 is connected to the Z direction second drive unit 62 via the connecting portion 68, and is driven in the Z direction (vertical direction) according to the Z direction drive operation by the Z direction second drive unit 62. The The inner circumferential side shaft 64 is connected to a link mechanism portion (slider link mechanism portion) 11L provided on the lower end side thereof so as to protrude from the beam irradiation portion 11 toward the right side. The movement operation in the vertical direction of the inner peripheral side shaft 64 according to the driving operation of the Z-direction second driving unit 62 is the rotation (swing) around the axis AY of the beam irradiation unit 11 via the link mechanism unit 11L on the lower end side. Motion) is converted to motion. As a result, the beam irradiation unit 11 transitions between a state having an obliquely downward posture angle and a state having an obliquely upward posture angle.

  The Z-direction second drive unit 62 is fixed to the connection portion 67 (connection portion with the outer circumferential side circular tubular shaft 63) of the Z-direction first drive unit 61, and the Z-direction second drive unit 62 is the Z-direction second drive unit 62. The inner peripheral shaft 64 is moved in the vertical direction by the drive of the first drive unit 61. Furthermore, the inner circumferential side shaft 64 is driven relative to the outer circumferential side tubular shaft 63 in the Z direction by the vertical driving operation of the Z direction second driving unit 62.

  Moreover, in order to ensure the sealing state of the vacuum chamber 2, the bellows 69 is provided in the appropriate position.

<Position recognition unit>
The joining apparatus 1 further includes a position recognition unit 28 (see also FIG. 8) for recognizing the horizontal position (specifically, X, Y, θ) of the workpieces 91 and 92. An alignment operation (alignment operation) between the objects to be bonded 91 and 92 is executed based on the position recognition result by the position recognition unit 28 and the like.

  As shown in FIGS. 1 and 8, etc., the position recognizing unit 28 includes imaging units (cameras) 28M and 28N that acquire a light image related to an object to be bonded as image data. The imaging units 28M and 28N each have a coaxial illumination system. In addition, as a light source of each coaxial illumination system of the imaging units 28M and 28N, light (for example, infrared light) that passes through the workpiece 91 or the like is used.

  Here, as shown in FIGS. 4 and 5, both the objects to be joined 91 and 92 are each provided with a mark for alignment (hereinafter also referred to as an alignment mark or the like) MK. For example, two alignment marks MK1a and MK1b (see FIG. 4) are provided on one workpiece 91, and two alignment marks MK2a and MK2b (see FIG. 5) are also provided on the other workpiece 92.

  The alignment operation (alignment operation) of the objects to be bonded 91 and 92 is executed by recognizing the positions of the alignment marks MK attached to the objects to be bonded 91 and 92 by the position recognition unit (camera or the like) 28. Is done.

  More specifically, as shown in FIG. 8, the light emitted from the light source (not shown) of the coaxial illumination system in the imaging unit 28M is reflected by the mirror 28e in a state where the objects 91 and 92 are close to each other. Then, the traveling direction is changed and the traveling proceeds upward. When the light is further reflected by the marks MK1a and MK2a of both the objects to be bonded 91 and 92 after passing through the light transmitting part at the center of the stage 12 and a part (or all) of the object to be bonded 91, Advances in the opposite direction (downward). Then, the light again passes through the light transmitting portion at the center of the stage 12 and is reflected by the mirror 28e, and its traveling direction is changed to the left, and reaches the image pickup device in the image pickup portion 28M. In this way, the position recognizing unit 28 acquires a light image (an image including the marks MK1a and MK2a) related to the objects 91 and 92 as the captured image GAa (see FIG. 6), and based on the image GAa, The position of a certain set of marks (MK1a, MK2a) attached to the joints 91, 92 is recognized, and the amount of positional deviation (Δxa, Δya) between the set of marks (MK1a, MK2a) is obtained. (See FIG. 7). FIG. 7 is a diagram illustrating a state in which the pair of marks MK1a and MK2a are displaced from each other.

  Similarly, the light emitted from the light source (not shown) of the coaxial illumination system in the imaging unit 28N is reflected by the mirror 28f, the traveling direction thereof is changed, and the light travels upward. If the light is further reflected by the marks MK1b and MK2b of both the objects to be bonded 91 and 92 after passing through the light transmitting part at the center of the stage 12 and part or all of the object 91, this time, Proceed in the direction (downward). Then, the light again passes through the light transmitting part at the center of the stage 12 and is reflected by the mirror 28f, and its traveling direction is changed to the right, and reaches the image pickup device in the image pickup part 28N. In this way, the position recognizing unit 28 acquires the optical images (images including the marks MK1b and MK2b) related to the objects 91 and 92 as the captured images GAb (see FIG. 6), and based on the images GAb While recognizing the position of another set of marks (MK1b, MK2b) attached to the joints 91, 92, the amount of displacement (Δxb, Δyb) between the set of marks (MK1b, MK2b) is obtained. . Here, the photographing operations of the captured images GAa and GAb by the imaging units 28M and 28N are executed almost simultaneously.

  Thereafter, the position recognizing unit 28 determines the X direction, the Y direction, and θ based on the positional deviation amounts (Δxa, Δya), (Δxb, Δyb) of these two sets of marks and the geometric relationship between the two sets of marks. The relative deviation amount ΔD (specifically, Δx, Δy, Δθ) of both the workpieces 91, 92 in the direction is calculated (detected). As will be described later, the stage 12 has two translational directions (X direction and Y direction) and a rotational direction (θ direction) so that the relative deviation amount ΔD recognized by the position recognition unit 28 is reduced. Driven by. Thereby, both the to-be-joined objects 91 and 92 are relatively moved in the direction parallel to the substantially horizontal plane, and the positional deviation amount ΔD is corrected.

  In this manner, the positional deviation amount ΔD (specifically Δx, Δy, Δθ) in the plane (substantially horizontal plane) perpendicular to the substantially vertical direction (Z direction) is measured (detected), and the positional deviation amount ΔD is calculated. An alignment operation (positioning operation) to be corrected is executed. Such measurement operation (detection operation) and alignment operation are executed under the control of the controller 100.

  After that, the head 22 is further moved vertically downward from the state shown in FIG. 8 by the Z-axis raising / lowering drive mechanism 26, and both the objects to be joined 91 and 92 are contacted and pressurized. Thereby, both the to-be-joined objects 91 and 92 are joined.

  Moreover, the joining apparatus 1 includes a controller CT. Various operations in the bonding apparatus 1 are executed under the control of the controller CT. The controller CT controls, for example, various processes (decompression process, surface activation process, drive process, pressurization process, etc.) described later.

<1-2. Operation>
Next, the joining operation in the joining apparatus 1 will be described with reference to the flowchart of FIG. 9 and the schematic diagrams of FIGS. 10 to 14 are diagrams sequentially showing each of the time-series steps in the joining operation (joining method). 10-14, illustration of apparatus components other than the stage 12, the head 22, and the beam irradiation part 11 is abbreviate | omitted suitably.

As shown in FIG. 9, in the first embodiment,
(S1) Surface activation treatment for one workpiece 91 (see FIGS. 10 and 11),
(S2) Movement of the beam irradiation unit 11 (see FIG. 12),
(S3) Surface activation treatment for the other object 92 (see FIG. 13),
(S4) Joining processing of both workpieces 91 and 92 (see FIG. 14),
Are executed in this order.

First, as shown in FIG. 10, in the vacuum chamber, both objects to be joined 91 and 92 are arranged in a state of being opposed to each other. The beam irradiation unit 11 is disposed at a position PG1 above the + X side in the vacuum chamber 2, and the swing angle of the beam irradiation unit 11 is adjusted so that the beam irradiation unit 11 faces obliquely downward. Here, of the objects to be bonded 91 and 92, the bonded surface of one bonded object is formed of silicon (Si), and the bonded surface of the other bonded object is formed of lithium niobate (LiNbO ₃ ). It shall be.

  In this state, as shown in FIG. 11, the beam irradiation unit 11 irradiates the workpiece 91 held on the stage 12 with a beam, and executes a surface activation process on the workpiece 91 (step S1). ). Specifically, the beam irradiation unit 11 irradiates an atomic beam (energy particles) obliquely downward from the upper position PG1 (specifically, toward the bonding surface of the workpiece 91 held on the stage 12). .

  Next, as shown in FIG. 12, the beam irradiation unit 11 moves from the position PG1 to the position PG2 in accordance with the drive operation by the drive mechanism 60 (step S2).

  After the movement, the beam irradiation unit 11 is disposed at the position PG2 below the + X side in the vacuum chamber 2, and the swing angle of the beam irradiation unit 11 is adjusted so that the beam irradiation unit 11 faces obliquely upward. Is done.

  In this state, as shown in FIG. 13, the beam irradiation unit 11 irradiates the object 92 held by the head 22 with a beam and executes the surface activation process for the object 92. (Step S3). Specifically, the beam irradiation unit 11 irradiates an atomic beam (energetic particles) obliquely upward from the lower position PG2 (specifically, toward the bonding surface of the workpiece 92 held by the head 22). .

  Thereafter, the head 22 is lowered in accordance with the driving operation of the Z-axis raising / lowering drive mechanism 26, and the objects to be joined 91 and 92 are relatively close to each other.

  Then, in a state where both the objects to be bonded 91 and 92 are close to each other, an alignment operation (alignment operation) in the horizontal direction of both the objects to be bonded 91 and 92 is performed using the position recognition unit 28 (see FIG. 8).

  After the alignment operation of both the objects to be bonded 91 and 92 is performed, the head 22 is lowered again and the objects to be bonded 91 and 92 come into contact with each other. Then, both objects 91 and 92 are joined (step S4).

  Furthermore, various semiconductor devices are manufactured by a manufacturing method including such a bonding technique. In addition, it is not limited to a semiconductor device, Various MEMS devices (micro electro mechanical system device (micro electro mechanical element)) can be manufactured similarly.

  According to the above operation, the beam irradiation is performed individually and sequentially on two different objects 91 and 92 by one beam irradiation unit 11, and the surfaces of both objects 91 and 92 are surfaced. Activation processing is executed. More specifically, with the vertical movement of one beam irradiation unit 11, two different positions PG1 and PG2 are irradiated with beams to two different objects 91 and 92 to perform surface activation processing. The Thereafter, both the objects to be bonded 91 and 92 subjected to the surface activation treatment are bonded to each other.

  Here, both the objects to be bonded 91 are subjected to the surface activation treatment on both objects to be bonded 91 and 92 in the same manner as in the above embodiment also by the apparatus according to the first prior art (see FIG. 64). , 92 can be joined to each other.

  However, as described above, the first prior art requires two expensive beam irradiation units, which is expensive.

  On the other hand, according to the above-described embodiment, by moving one beam irradiation unit 11, it is possible to individually and sequentially perform processing on the lower workpiece 91 and the upper workpiece 92. Therefore, it is not necessary to provide two beam irradiation units in the bonding apparatus 1, and only a single beam irradiation unit 11 may be provided. Therefore, since the number of very expensive beam irradiation units can be reduced, the apparatus cost (and thus the manufacturing cost of a semiconductor device or the like manufactured using a bonding apparatus) can be suppressed. More specifically, since the number can be reduced from two to one as compared with the first prior art, the device cost can be reduced. Note that the cost that is reduced with the reduction in the number of installed beam irradiation units is significantly greater than the cost associated with the installation of the drive mechanism 60.

  In the first prior art, the two beam irradiators 901 and 902 are arranged in the vicinity of positions facing each other (see FIG. 64). Therefore, energetic particles emitted from one beam irradiation unit 901 are also irradiated to the other beam irradiation unit 902. In this case, the other beam irradiation unit 902 is adversely affected. On the contrary, there is an adverse effect caused by the energy particles emitted from the beam irradiation unit 902 being also irradiated to the beam irradiation unit 901.

  On the other hand, according to the said embodiment, a process is performed separately and sequentially with respect to the lower to-be-joined object 91 and the upper to-be-joined object 92 by moving the one beam irradiation part 11. FIG. For this reason, a beam from another beam irradiating portion does not reach, and it is not necessary to be adversely affected thereby.

  Further, in the above-described embodiment, the surface activation processing for both the objects to be bonded 91 and 92 is performed individually and sequentially in the vacuum chamber 2, and both the objects to be bonded 91 and 92 are carried out of the vacuum chamber 2. It joins in the vacuum chamber 2 without it. Therefore, it is possible to bond in a short time in a high degree of vacuum (for example, an ultra-high vacuum state), and suspended particles (floating molecules, etc.) are re-adsorbed on the surface that has been activated, resulting in good bonding. Can be prevented. As a result, both the workpieces 91 and 92 are joined in a very good state, and a high joining strength can be obtained.

  The beam irradiation by the beam irradiation unit 11 is preferably atomic beam irradiation. Atomic beam irradiation has a characteristic that its directivity is higher than ion beam irradiation. Therefore, it is possible to prevent the energy particles from diffusing to a region other than the irradiation target region to be irradiated with the energy particles, in other words, a region other than the bonding surface. When the energetic particles diffuse, various metal materials constituting the inner wall of the vacuum chamber 2 or various constituent elements in the vacuum chamber 2 are ejected by the impact of the collision with the diffused energetic particles and adhere to the bonding surface. May cause metal contamination. With atomic beam irradiation having high directivity, it is possible to suppress diffusion of energetic particles and suppress metal contamination. In particular, as in the above-described embodiment, one beam irradiation unit 11 individually irradiates two objects (irradiation target) with energetic particles (more specifically, two beam irradiation units 11 have two According to (moving between the positions PG1 and PG2 and sequentially irradiating the two irradiation objects with energetic particles), the diffusion of the energetic particles at the respective irradiation time points on the two objects to be bonded is described above. This can be suppressed as compared with the prior art. Therefore, it is possible to suppress metal contamination.

  In the first embodiment, the mode in which the beam irradiation unit 11 moves between the upper position PG1 and the lower position PG2 is illustrated, but the present invention is not limited to this.

  For example, as shown in FIG. 63, the beam irradiation unit 11 is fixed at the center position without moving in the vertical direction, and only the swing operation (swing operation about the axis AY) related to the beam irradiation unit 11 is performed. May be.

  However, in the modified example of FIG. 63, when the distance (separation distance) between the objects to be joined 91 and 92 is set to a value similar to that of the first embodiment, it is relatively smaller than that of the first embodiment. Beam irradiation is performed on the bonding surface at a large irradiation angle (incident angle with respect to the normal of the bonding surface). In short, beam irradiation is performed at an irradiation angle that is relatively close to the horizontal direction.

  In the technique of irradiating a beam at an irradiation angle close to the lateral direction with respect to the bonding surface, the irradiation intensity at a portion close to the beam irradiation portion 11 (right side portion) and a portion far from the beam irradiation portion 11 (left side portion) within the bonding surface. Are relatively different, and a relatively large non-uniformity occurs in the irradiation target surface (bonding surface) of the beam.

  On the other hand, in the above embodiment, the beam is irradiated from the beam irradiation unit 11 at the relatively upper position PG1 toward the workpiece 91 held by the lower stage 12, and the beam irradiation unit 11 is positioned from the position PG1. Move to PG2. Thereafter, a beam is irradiated from the beam irradiation unit 11 at a relatively lower position PG2 toward the workpiece 92 held by the upper head 22 this time.

  In this way, the beam irradiation unit 11 moves up and down between the lower position PG1 and the upper position PG2, and the beam irradiation unit 11 compares the workpieces 91 and 92 with the vertical movement. The beam can be irradiated from the front of the target. More specifically, with respect to the bonding surface of the workpiece 91, from a position PG1 further above the center position PGc (see FIG. 63) between the workpieces 91 and 92 (relatively perpendicular). The beam can be irradiated at a close angle. Therefore, it is possible to improve the uniformity of beam irradiation within the beam irradiation surface (bonding surface of the workpiece 91). Similarly, the beam is applied to the bonding surface of the object to be bonded 92 from the position PG2 further lower than the center position PGc between the objects to be bonded 91 and 92 (at an angle relatively close to vertical). Can be irradiated. Therefore, it is possible to improve the uniformity of beam irradiation within the beam irradiation surface (the bonding surface of the workpiece 92).

  Further, in the mode as shown in FIG. 63, it is possible to further modify the beam irradiation to both objects to be bonded at the same irradiation angle as in the first embodiment. In this case, however, it is necessary to further increase the distance between the objects to be bonded 91 and 92 (enlargement by about 2 times), so that there is a problem that the drive shaft of the head 22 is lengthened and the rigidity is lowered. Can occur.

  On the other hand, in the said embodiment, the presence position of the beam irradiation part 11 is changed between two positions PG1 and PG2 with the vertical movement of the beam irradiation part 11. FIG. Therefore, it is not necessary to further increase the distance between the objects to be joined 91 and 92 in order to adjust the beam irradiation angle with respect to the bonding surface (to irradiate the bonding surface with a beam from the relatively front side). It is also possible to suppress a decrease in rigidity.

  In order to improve the etching rate by energy wave irradiation, the incident angle of the beam (energetic particles) is an appropriate value (depending on the object), for example, a predetermined value within a range of 30 ° to 60 °. Value). The first embodiment can adjust the incident angle of the beam to an appropriate value by accompanying the vertical movement of the beam irradiation unit 11, and is also useful for improving the etching rate.

<2. Second Embodiment>
The second embodiment is a modification of the first embodiment. Below, it demonstrates centering on difference with 1st Embodiment.

  FIG. 15 is a flowchart showing a joining operation according to the second embodiment. FIGS. 16 to 31 are diagrams sequentially illustrating each of the time-series steps in the bonding operation (bonding method) according to the second embodiment. In FIG. 16 to FIG. 31, illustration of apparatus components other than the stage 12, the head 22, and the beam irradiation unit 11 is omitted as appropriate.

  Next, the bonding operation in the bonding apparatus 1 (1B) will be described with reference to the schematic diagrams of FIGS. In addition, after the operation shown in FIG. 31, the same operation as that of the first embodiment (see FIGS. 10 to 14) is executed.

  In the second embodiment, prior to the operations shown in FIGS. 10 to 14, sputtering processing (film formation processing by sputtering) is performed on both objects 91 and 92 in the same vacuum chamber 2. An embodiment is illustrated. Here, it is assumed that the bonding surfaces of the objects to be bonded 91 and 92 are each formed of a material other than silicon (Si) (for example, lithium niobate).

Specifically, as shown in FIG.
(1) Step S10: Surface activation treatment and sputtering treatment for one workpiece 91 (see FIGS. 16 to 23),
(2) Step S20: Surface activation treatment and sputtering treatment for the other workpiece 92 (see FIGS. 24 to 31),
(3) Step S30: Surface activation process for both objects to be bonded 91, 92 and bonding process for both objects to be bonded 91, 92 (see FIGS. 11 to 14),
Are executed in this order.

  (1) First, in step S10, a surface activation process and a sputtering process are performed on the workpiece 91 (see FIGS. 16 to 23).

  Specifically, as shown in FIG. 16, an object to be bonded 91 that is an object to be sputtered (a sputtering object) is delivered to the head 22, and the object to be bonded 91 is held by the head 22. Similarly, as shown in FIG. 17, the sputtering target member TG is delivered to the stage 12, and the target member TG is held on the stage 12. Here, it is assumed that the target member TG is formed of silicon (Si).

  As shown in FIG. 18, first, the beam irradiation unit 11 performs beam irradiation from the relatively lower position PG <b> 2 toward the relatively upper object 91 to perform surface activation processing on the object 91. Execute.

  Next, the beam irradiation unit 11 moves from the position PG2 to the position PG1 in accordance with the driving operation by the driving mechanism 60 (see FIG. 19).

  After the movement, the beam irradiation unit 11 is disposed at the position PG1 above the + X side in the vacuum chamber 2, and the swing angle of the beam irradiation unit 11 is adjusted so that the beam irradiation unit 11 faces obliquely downward. Is done.

  In this state, the beam irradiation unit 11 irradiates the atomic beam (energy particles) from the upper position PG1 obliquely downward (specifically toward the surface of the target member TG held on the stage 12). (See FIG. 20). In response to this beam irradiation, high-speed energetic particles (such as argon) collide with the target member TG, and atoms of the surface material (here, silicon) of the target member TG are ejected and travel toward the upper object 91. To do. Then, the surface material of the target member TG adheres to the workpiece 91 and forms a film on the surface of the workpiece 91. In this way, the sputtering process is performed.

  Thereafter, as shown in FIG. 21, the workpiece 91 is moved to the reversing unit 4, and the top and bottom are reversed in the reversing unit 4 (see also FIG. 23). Then, the workpiece 91 is temporarily stored at a predetermined position in the reversing unit 4. Further, as shown in FIG. 22, the sputtering target member TG (TG1) for the workpiece 91 is removed from the stage 12 and stored in a predetermined position in the load lock chamber 3. It should be noted that the target member and the object to be joined once returned to the load lock chamber 3 and the reversing unit 4 may be stored in either the magazine elevator in the load lock chamber 3 or the lower storage place of the reversing unit 4, respectively. .

  (2) In the next step S20, as shown in FIGS. 24 to 30, this time, the surface activation process and the sputtering process for the workpiece 92 are performed.

  Specifically, first, as shown in FIG. 24, a workpiece 92 that is a new sputtering target is delivered to the head 22, and the workpiece 92 is held by the head 22. Similarly, as shown in FIG. 25, the sputtering target member TG (TG2) for the article 92 is delivered to the stage 12, and the target member TG is held on the stage 12.

  Next, the beam irradiation unit 11 moves from the position PG1 to the position PG2 in accordance with the driving operation by the driving mechanism 60 (see FIG. 26).

  As shown in FIG. 27, the beam irradiation unit 11 performs beam irradiation from the position PG <b> 2 toward the workpiece 92, and executes a surface activation process on the workpiece 92.

  Next, the beam irradiation unit 11 moves again from the position PG2 to the position PG1 in accordance with the driving operation by the driving mechanism 60 (see FIG. 28).

  After the movement, the beam irradiation unit 11 is disposed at the position PG1 above the + X side in the vacuum chamber 2, and the swing angle of the beam irradiation unit 11 is adjusted so that the beam irradiation unit 11 faces obliquely downward. Is done.

  In this state, the beam irradiation unit 11 irradiates the atomic beam (energy particles) from the upper position PG1 obliquely downward (specifically toward the surface of the target member TG held on the stage 12). (See FIG. 29). In response to this beam irradiation, high-speed energetic particles (such as argon) collide with the target member TG, and atoms of the surface material (silicon) of the target member TG are ejected and travel toward the upper object 92. Then, the surface material of the target member TG adheres to the workpiece 92 and forms a film on the surface of the workpiece 92. In this way, the sputtering process is performed.

  Thereafter, as shown in FIG. 30, the sputtering target member TG2 (TG2) for the workpiece 92 is removed from the stage 12 and stored in a predetermined position in the load lock chamber 3.

  Further, as shown in FIG. 31, the workpiece 91 once stored at a predetermined position in the reversing unit 4 is moved again from the reversing unit 4 into the vacuum chamber 2. Along with this moving operation or the like, an object 91 having an upward bonding surface is held by the stage 12. This state is the same as the state of FIG.

  (3) Thereafter, in step S30, the same operation as in FIGS. 11 to 14 is performed. Specifically, the surface activation process for the workpiece 91 is executed by beam irradiation from the position PG1, and the surface activation process for the workpiece 92 is executed by beam irradiation from the position PG2. Here, a silicon layer (film) is formed on the bonding surfaces of both the objects to be bonded 91 and 92 by the sputtering process in steps S10 and S20. In step S30, a silicon-silicon bonding process is performed. .

  As described above, in step S30 (FIG. 15) of the second embodiment, as in steps S1 to S4 (FIG. 9) of the first embodiment, by moving one beam irradiation unit 11, 2 Beam irradiation is performed individually and sequentially from two different positions PG1, PG2 to two different objects 91, 92, and a surface activation process is performed on both objects 91, 92. Therefore, the same effect as that of the first embodiment can be obtained.

  In step S <b> 10, the beam irradiation unit 11 performs surface activation processing on the workpiece 91 held by the head 22 by beam irradiation from the position PG <b> 2 toward the head 22. Thereafter, the beam irradiation unit 11 moves from the position PG2 to the position PG1. Then, the beam irradiation unit 11 irradiates the target member held by the stage 12 with the beam from the position PG1 toward the stage 12, and performs the sputtering film forming process on the workpiece 91 facing the target member. .

  As described above, the beam irradiation unit 11 moves in the Z direction, so that the surface activation process for the workpiece 91 and the sputtering surface activation process for the workpiece 91 can be performed individually and sequentially. Accordingly, the beam irradiation unit 11 can function not only as a beam irradiation unit for surface activation processing but also as a beam irradiation unit for sputtering processing. In particular, the surface activation process and the sputtering process can be performed by using one beam irradiation unit 11 in the same apparatus 1 that also performs the bonding process as described above. According to this, compared with the case where a sputtering device is provided separately, cost can be suppressed.

  In the second embodiment, the sputtering operation using silicon (Si) as a target is exemplified, but the present invention is not limited to this. For example, a sputtering operation using various materials such as gold (Au), gallium (Ga), and iron (Fe) as a target may be performed.

  In particular, a doping process of these materials may be performed on a silicon wafer or the like by performing a sputtering process using a material such as gallium (Ga) or iron (Fe) as a target. In other words, the sputtering process is not limited to sputtering at a level for forming a thin film, but also includes a doping level for dispersing molecules (or atoms). Thus, the sputtering treatment in the present application includes irradiating energetic particles (also referred to as radiation particles) such as argon to disperse molecules (or atoms) and form a thin film.

  Moreover, in the said 2nd Embodiment etc., the aspect (refer FIG.18, FIG.20, FIG.11 etc.) by which surface activation processing, sputtering processing, and surface activation processing are performed with respect to each to-be-joined object is illustrated. However, it is not limited to this. For example, the combination of the surface activation process and the sputtering process may be repeatedly executed a plurality of times. Further, different types of sputtering processes may be repeatedly performed a plurality of times after the surface activation process. Alternatively, the surface activation process may not be performed after the sputtering process.

  Moreover, in the said 2nd Embodiment, although the to-be-joined objects 91 and 92 are hold | maintained with the head 22 in step S10, S20, the aspect in which a surface activation process and a sputtering process are performed is illustrated, However, It is limited to this Not. For example, in steps S10 and S20, the objects to be bonded 91 and 92 may be held by the stage 12 and the surface activation process and the sputtering process may be performed. In this case, the same operation may be executed with the top and bottom inverted.

  In this way, the surface activation process is performed on the workpiece 91 in a state where the workpiece 91 is held by one of the holding portions 12 and 22, and then the workpiece 91 is attached to the workpiece 91. In the state where the target member TG for sputtering treatment with respect to the workpiece 91 is held by the other holding portion of the holding portions 12 and 22, the energetic particles are directed toward the target member TG. The sputtering process may be performed on the article to be bonded 91 by irradiating. Further, after the sputtering process is performed on the workpiece 91 and the target member held by the other holding portion is removed, the workpiece 91 is held by the holding portion 12 and the holding portion 22. It is only necessary that both the objects to be bonded 92 and the objects to be bonded 92 are irradiated with the energy particles for surface activation individually and sequentially, and the both objects to be bonded 91 and 92 are bonded.

  Similarly, the surface activation process is performed on the workpiece 92 in a state where the workpiece 92 is held by one of the holding portions 12 and 22, and then the workpiece 92 is attached to the one of the holding portions 12 and 22. In the state where the target member TG for the sputtering process with respect to the workpiece 92 is held by the other holding portions of the holding portions 12 and 22, the energetic particles are directed toward the target member TG. A sputtering process may be performed on the workpiece 92 by irradiation. Furthermore, after the sputtering process is performed on the workpiece 92 and the target member held by the other holding portion is removed, the workpiece 91 is held by the holding portion 12 and held by the holding portion 22. It is only necessary that both the objects to be bonded 92 and the objects to be bonded 92 are irradiated with the energy particles for surface activation individually and sequentially, and the both objects to be bonded 91 and 92 are bonded.

<3. Third Embodiment>
The third embodiment is a modification of the first embodiment. Below, it demonstrates centering on difference with 1st Embodiment. In the third embodiment, one beam irradiation unit 11 similar to that in the first embodiment is provided on each of the left and right sides.

  FIG. 32 is a schematic diagram illustrating an internal configuration of the bonding apparatus 1 (1C) according to the third embodiment.

  As shown in FIG. 32, the bonding apparatus 1C includes two beam irradiation units 11 (specifically, 11A and 11B). However, the two beam irradiators 11A and 11B are irradiators that irradiate a beam to the bonding surface of the same workpiece. The beam irradiation unit 11A is an irradiation unit that irradiates a beam to the right half region on the bonding surface of the object to be bonded, and the beam irradiation unit 11B irradiates the left half region on the bonding surface of the object to be bonded. It is an irradiation part to do.

  Using these beam irradiation units 11A and 11B, first, a beam is irradiated onto the workpiece 91 held on the stage 12. Specifically, the beam irradiation unit 11A irradiates the beam toward the right half region of the workpiece 91, and the beam irradiation unit 11B irradiates the beam toward the left half region of the workpiece 91.

  Next, as shown in FIG. 33, both the beam irradiation units 11A and 11B are driven by the drive mechanism 60 and moved from the upper position PG1 to the lower position PG2. Further, the posture angle of each of the beam irradiation units 11A and 11B is changed from diagonally downward to diagonally upward.

  Thereafter, as shown in FIG. 34, the beam is irradiated to the workpiece 92 held on the stage 12 by using the beam irradiation units 11A and 11B. Specifically, the beam irradiation unit 11A irradiates the beam toward the right half region of the workpiece 92, and the beam irradiation unit 11B irradiates the beam toward the left half region of the workpiece 92.

  Such an embodiment is particularly useful when the bonding surface of the workpiece 91 has a relatively large area. More specifically, as shown in FIG. 32, the X-direction length L2 (FIG. 34) is approximately twice the X-direction length L1 (see FIG. 10) of the article 91 (also referred to as 91a) of the first embodiment. This is particularly useful when, for example, a beam is irradiated to the workpiece 91 (91c) having a reference).

  Here, when the technique according to the first prior art is applied to a workpiece 91 having a relatively large area (specifically, a workpiece 91 having a length twice as long in the X direction). In order to perform an appropriate surface activation treatment, it is necessary to arrange a total of four beam irradiation units 11 on each of the left and right sides of the article to be bonded 91 and two on each of the upper and lower sides.

  On the other hand, in the technique according to the third embodiment, the beam irradiation unit 11A is provided for the right half region of the workpiece having a relatively wide area, and the beam irradiation is performed for the left half region of the workpiece. A part 11B is provided. Then, the beam irradiation units 11A and 11B move in the vertical direction, respectively, so that the workpieces of the lower workpiece 91 and the upper workpiece 92 are individually and sequentially processed. Therefore, a total of two beam irradiators 11 may be disposed on each of the left and right sides of the workpiece 91. That is, it is not necessary to provide four beam irradiation units in the bonding apparatus 1C, and only two beam irradiation units 11 may be provided. Therefore, since the required number (total number) of the very expensive beam irradiation units 11 can be reduced from “4” to “2”, the apparatus cost can be suppressed.

  In addition, in the above, although the two beam irradiation parts 11A and 11B illustrated the aspect which irradiates a beam simultaneously with respect to the same to-be-joined object 91 of the two to-be-joined objects 91 and 92, it is not limited to this. . For example, the two beam irradiation units 11A and 11B maintain the irradiation responsible regions (right half region or left half region) similar to the above in the respective bonded objects 91 and 92, while the two bonded objects 91 and 92 You may make it irradiate a beam to the same to-be-joined thing non-simultaneously (it replaces). 35 to 37 are diagrams showing such modifications.

  Specifically, first, as shown in FIG. 35, the beam irradiation unit 11A irradiates the beam from the upper position PG1 toward the right half region of the workpiece 91, and the beam irradiation unit 11B sets the left side of the workpiece 92. A beam is irradiated from a lower position PG2 toward the half area. Next, as shown in FIG. 36, the beam irradiation unit 11A is moved from the upper position PG1 to the lower position PG2, and the beam irradiation unit 11B is moved from the lower position PG2 to the upper position PG1. Further, the posture angle of the beam irradiation unit 11A is changed from diagonally downward to diagonally upward, and the posture angle of the beam irradiation unit 11B is changed from diagonally upward to diagonally downward. Thereafter, as shown in FIG. 37, the beam irradiation unit 11A irradiates the beam from the lower position PG2 toward the right half region of the workpiece 92, and the beam irradiation unit 11B faces the left half region of the workpiece 91. Then, the beam is irradiated from the upper position PG1. In this manner, the beam irradiation units 11A and 11B may alternately irradiate the workpieces 91 and 92 with beams.

  When the object to be joined is large not only in the X direction but also in the Y direction, a double beam irradiation unit 11 in which two beam irradiation ports are arranged in the Y direction may be provided (see FIG. 38). . In FIG. 38, the configuration and the like of one beam irradiation unit 11A are shown, and the configuration and the like of the other beam irradiation unit 11B are omitted as appropriate. As shown in FIG. 38, the beam irradiation unit 11A has two irradiation ports (also referred to as unit irradiation units or divided irradiation units) RP1 and RP2, and the irradiation ports RP1 and RP2 respectively correspond to regions. (Irradiation area) Beams are mainly emitted to RE11 and RE12 (hatched areas). Although the other beam irradiation unit 11B is not shown, the other beam irradiation unit 11B has the same configuration as the beam irradiation unit 11A. The two irradiation ports of the beam irradiation unit 11B irradiate the corresponding irradiation regions RE21 and RE22 with beams.

  In this case, the arrangement number (total number) of the dual beam irradiation units 11 can be reduced from “4” to “2”. In other words, the number of irradiation ports arranged can be reduced from “8” to “4”.

  Further, in FIG. 38, the double beam irradiation unit 11 is illustrated, but the invention is not limited to this, and a multiple beam beam irradiation unit (three or more beams) may be used. Further, the plurality of irradiation ports (also referred to as unit irradiation units) may be arranged side by side (see FIG. 38) along the extending direction (Y direction) of the irradiation port having an elongated shape, or conversely, the elongated shape. They may be arranged side by side in a direction (Y direction) perpendicular to the extending direction (X direction) of the irradiation port having a shape.

<4. Fourth Embodiment>
The third embodiment is a modification of the first embodiment. Below, it demonstrates centering on difference with 1st Embodiment.

  In the first embodiment, the beam irradiating unit 11 irradiates the beam at a constant posture angle (fixed angle) downward from the position PG1 and irradiates the beam at a constant posture angle upward from the position PG2. Yes.

  In the fourth embodiment, a mode in which the beam irradiation unit 11 irradiates a band-shaped region (elongated region) by irradiating the beam from each position PG1, PG2 while swinging is exemplified. In the following, beam irradiation (beam irradiation from the position PG1) on the workpiece 91 of both the workpieces 91 and 92 will be described in detail. Beam irradiation (beam irradiation from the position PG2) is performed.

  Here, it is assumed that the bonding surface of the object to be bonded is relatively large (wide) with respect to the irradiation region of the beam irradiation unit 11.

  FIG. 39 is a schematic cross-sectional view showing a state of beam irradiation by the beam irradiation unit 11 in the fourth embodiment, and is a view of a cross section parallel to the XZ plane as viewed from the side (−Y side). As shown in FIG. 39, a beam irradiation region RE (specifically, a main irradiation region) at a certain point in time by the beam irradiation unit 11 is expressed by a bonding surface (a line segment having a predetermined length in the drawing) of the workpiece 91. ) Is a partial region (a relatively narrow region) (represented by a shorter line segment in the figure). Here, it is assumed that a dual beam irradiation unit (see FIG. 38) in which two beam irradiation ports are arranged in the Y direction is provided as the beam irradiation unit 11. However, the present invention is not limited to this, and a single beam irradiation unit or a multiple beam irradiation unit may be provided.

  In the fourth embodiment, the beam irradiation with respect to the region RE that is relatively narrow in the X direction is performed with the swinging operation (rotating operation) about the axis AY of the beam irradiation unit 11, thereby extending in the X direction. The region (elongated region) RG (see FIG. 40) is irradiated with a beam.

  More specifically, as shown in FIG. 40, the beam irradiation unit 11 first moves to the position PG1, and then starts irradiation from the right end side (side closer to the beam irradiation unit 11) of the bonding surface of the workpiece 91. To do.

  Thereafter, the beam irradiation unit 11 is swung (rotated) about the rotation axis AY parallel to the bonding surface of the workpiece 91 by the drive mechanism 60 (specifically, the swinging mechanism). The posture angle is gradually changed. Specifically, as the beam irradiation unit 11 swings, the irradiation region RE of the beam irradiation unit 11 is changed from the right end side of the workpiece 91 (see FIG. 40) to the central portion of the workpiece 91 (see FIG. 40). 39) and moves to the left end side of the workpiece 91 (see FIG. 41). Further, along with the swinging operation, the angle α between the normal to the bonding surface and the beam irradiation direction is changed from a relatively small value α1 to a relatively large value α2 (α1 <α2).

  When the beam irradiation unit 11 is fixed and irradiated at a predetermined posture angle, the irradiation amount is non-uniform between the central portion of the irradiation region RE and the peripheral portion of the irradiation region RE.

  On the other hand, according to this 4th Embodiment, the beam irradiation part 11 irradiates a beam (energetic particle) toward the to-be-joined object 91 with the rocking | fluctuation operation | movement around the rotating shaft AY. Therefore, compared with the case where the beam irradiation unit 11 is fixed and irradiated at a predetermined posture angle, the irradiation amount in the X direction is made uniform, and the beam irradiation on the bonding surface of the object to be bonded (the beam irradiation target surface of the irradiation object) is performed. It is possible to make the amount uniform.

  Further, in the fourth embodiment, the swinging speed of the beam irradiation unit 11 is gradually decreased with the swinging operation (from FIG. 40 to FIG. 41) of the beam irradiation unit 11 as described above. Be changed. Specifically, the beam irradiation unit 11 has a movement speed V2 (FIG. 41) of the irradiation region RE of the beam irradiation unit 11 that is lower than a movement speed V1 (FIG. 40) of the irradiation region RE of the beam irradiation unit 11. The rocking speed is gradually reduced. The moving speed V2 is the moving speed of the irradiation region RE when the left region RE20 is irradiated with the beam in the irradiation target region (the entire bonding surface of the workpiece 91) by the beam irradiation unit 11. The moving speed V1 is a moving speed of the irradiation area RE when the right area RE10 is irradiated with a beam. Further, when the beam is irradiated to the region between the right region RE10 and the left region RE20, the swing speed of the beam irradiation unit 11 is gradually reduced as the irradiation region RE moves from right to left. The moving speed of the irradiation area RE is also gradually reduced. Thus, the swing speed of the beam irradiation unit 11 is controlled so as to gradually decrease.

  Here, the right region RE10 (FIG. 40) is a region having a relatively small distance from the beam irradiation unit 11 (a region relatively close to the beam irradiation unit 11), and is also expressed as a near side region. In the near side region, since the distance to the beam irradiation unit 11 is relatively small, the irradiation intensity by the beam irradiation unit 11 is relatively large. On the other hand, the left region RE20 (FIG. 41) is a region having a relatively large distance from the beam irradiation unit 11 (a region far from the beam irradiation unit 11), and is also expressed as a remote region. In the remote region, the irradiation intensity by the beam irradiation unit 11 is relatively small because the distance to the beam irradiation unit 11 is relatively large.

  As described above, in the vicinity region RE10 where the irradiation intensity by the beam irradiation unit 11 is relatively large, the speed of the beam irradiation unit 11 is set to a relatively large value, and the separation side region where the irradiation intensity by the beam irradiation unit 11 is relatively small. In RE20, the speed of the beam irradiation unit 11 is set to a relatively small value. That is, the rocking speed of the beam irradiation unit 11 is changed according to the distance between the irradiation region RE irradiated with the energy particles by the beam irradiation unit 11 and the beam irradiation unit 11. In other words, with the change of the swing angle in the swing operation of the beam irradiation unit 11, the swing speed of the beam irradiation unit 11 is such that the energy particles in the irradiation region RE irradiated with the energy particles by the beam irradiation unit 11. The irradiation intensity (also referred to as an etching rate) is changed so that the moving speed in the X direction of the irradiation region RE accompanying the swinging operation is inversely proportional. According to this, the beam irradiation amount in the irradiation region RE at each time point is made uniform. That is, it is possible to further uniformize the beam irradiation amount on the bonding surface.

  Moreover, according to the above aspect, since the beam irradiation unit 11 irradiates the beam while swinging, the beam irradiation range can be expanded as compared with the case where the beam irradiation unit 11 does not swing. is there. In particular, the length of the bonding surface in the X direction is uniformized even for an object to be bonded which is larger than the length in the X direction of the irradiation region RE of the beam irradiation unit 11 (for example, about 2 to several times). Beam irradiation treatment can be performed. In other words, it is possible to perform a beam irradiation process that is well uniformized even on an object to be bonded whose bonding surface is relatively large (wide) with respect to the irradiation region of the beam irradiation unit 11. That is, by accompanying the swinging operation of the beam irradiation unit 11, uniform beam irradiation can be performed on a relatively long strip-shaped region RG, which can contribute to an increase in the size of the beam irradiation object. is there.

  Note that the above-described idea is not limited to the case where the bonding surface of the object to be bonded is very large relative to the irradiation region of the beam irradiation unit 11, but the bonding surface of the object to be bonded is equivalent to the irradiation region of the beam irradiation unit 11. The present invention can also be applied to the case where the size is as follows. In this case, although the beam irradiation target area is not enlarged, it is possible to make the beam irradiation amount uniform in the beam irradiation target area.

  Further, in the fourth embodiment, by using the dual (or multiple) beam irradiation unit 11 in which two beam irradiation ports are arranged in the Y direction, not only the X direction but also the Y direction. In addition, the beam can be satisfactorily irradiated even on a large workpiece. In other words, it is possible to expand the irradiation target region also in the arrangement direction (Y direction) of the plurality of irradiation ports (unit irradiation units).

  In addition, the beam irradiation used in the fourth embodiment is particularly preferably atomic beam irradiation. As described above, atomic beam irradiation has a characteristic that its directivity is higher than that of ion beam irradiation. Therefore, it is possible to prevent the energy particles from diffusing to a region other than the irradiation target region to be irradiated with the energy particles, in other words, a region other than the bonding surface. When the energetic particles diffuse, various metal materials constituting the inner wall of the vacuum chamber 2 or various constituent elements in the vacuum chamber 2 are ejected by the impact of the collision with the diffused energetic particles and adhere to the bonding surface. May cause metal contamination. With atomic beam irradiation having high directivity, it is possible to suppress diffusion of energetic particles and suppress metal contamination. And while using such a highly directional atomic beam (in other words, using a method that can irradiate a beam only to a relatively narrow irradiation region at a time), it is relatively wide due to the swinging motion. It is possible to irradiate energetic particles to the band-like region.

  In addition, in ion beam irradiation, since a beam is irradiated to a relatively wide range at a time, nonuniformity (in the amount of beam irradiation) occurs in the beam irradiation target region due to the distance from the beam irradiation unit. easy. On the other hand, in the atomic beam irradiation, since the beam is irradiated only to a relatively narrow range at a time, the non-uniformity (the beam irradiation amount) in the beam irradiation target region due to the distance from the beam irradiation unit is small. Hard to occur. Further, if the above-described rocking operation is performed using atomic beam irradiation, nonuniformity (in the beam irradiation amount) in the moving direction (X direction) of the irradiation region due to the rocking operation of the beam irradiation unit 11 is further suppressed. It is possible.

  Further, the idea of the fourth embodiment is not limited to the beam irradiation for the surface activation process, and can be applied also to the beam irradiation to the target member for the sputtering process. For example, at the time of beam irradiation to the target member TG of FIG. 20, the beam irradiation unit 11 is swung around the rotation axis AY, and the beam irradiation region is moved from the right end side to the left end side of the lower target member. On the other hand, the film may be irradiated to form a film forming process (sputter film forming process) on the upper workpiece 91. According to this, the beam irradiation amount in the X direction is made uniform compared to the case where the beam irradiation unit 11 is fixed and irradiated at a predetermined posture angle, and as a result, the sputter deposition amount (X direction) on the surface of the workpiece 91 is uniformed. Can be made uniform. The rotation axis AY is also expressed as an axis parallel to the surface of the upper workpiece 91 (sputtering target).

  In particular, as in the fourth embodiment, the swinging speed of the beam irradiation unit 11 is controlled to gradually decrease with the swinging operation of the beam irradiation unit 11 (from FIG. 40 to FIG. 41). Is preferred. More specifically, the rotational speed (swinging speed) of the beam irradiation unit 11 in the region far from the beam irradiation unit 11 (separation side region) is in the region near the beam irradiation unit 11 (near side region). It is preferable that the speed is set smaller than the rotation speed (swinging speed) of the beam irradiation unit 11. In other words, the rocking speed of the beam irradiation unit 11 when the energetic particles are irradiated on the near side region of the target member is the swing speed of the beam irradiation unit 11 when the energetic particles are irradiated on the remote side region of the target member. It is preferable to set it larger than the moving speed. According to this, it is possible to make the sputter deposition amount on the surface of the workpiece 91 more uniform (in the X direction).

  It should be noted that the rocking speed (specifically, its time-varying curve) that equalizes the beam irradiation amount on the surface of the object to be bonded in the surface activation process as in the fourth embodiment is the same. It was confirmed that the amount of sputter deposition was made uniform by performing the above-described sputtering process (sputtering process by beam irradiation to the target member accompanied by the swinging operation of the beam irradiation unit 11) in the time-dependent change curve). . As described above, the rocking speed for uniformizing the sputter deposition amount (specifically, its time-varying curve) is such that the beam irradiation amount on the surface of the object to be bonded in the surface activation processing as in the fourth embodiment is uniform. The same rocking speed (specifically, its time-varying curve) can be used.

  In the fourth embodiment, the mode in which the rocking speed of the beam irradiation unit 11 is changed according to the mutual distance between the irradiation region RE and the beam irradiation unit 11 is illustrated, but the present invention is not limited to this. For example, in addition to (or instead of) the mutual distance, the rocking speed of the beam irradiation unit 11 is changed according to the incident angle of the energy particles irradiated by the beam irradiation unit 11 with respect to the irradiation target surface. You may do it. Here, the optimal incident angle (also referred to as the optimal incident angle) θp for improving the etching rate differs depending on the type of irradiation object. Therefore, when the incident angle at each time point changes between an angle relatively close to the optimum incident angle θp and an angle relatively away from the optimum incident angle θp, the swing speed of the beam irradiation unit 11 is adjusted. You may make it do. Specifically, when the incident angle is relatively close to the optimum incident angle θp, the irradiation region RE moves at a relatively large speed. Conversely, when the incident angle is relatively far from the optimum incident angle θp, the irradiation area RE is relatively small. The swing speed of the beam irradiation unit 11 may be adjusted so that the irradiation region RE moves.

<5. Fifth Embodiment>
The fifth embodiment is a further modification of the fourth embodiment. Below, it demonstrates centering on difference with 4th Embodiment. In the fifth embodiment, a mode of approximating the bonding surface of an object to be bonded by a composite region of a plurality of band-like regions is exemplified.

  FIG. 42 is a diagram illustrating the beam irradiation unit 11 (11E) of the bonding apparatus 1E according to the fifth embodiment.

  As shown in FIG. 42, the beam irradiation unit 11E includes three irradiation units 11e, 11f, and 11g arranged side by side in the Y direction. The three irradiation units 11e, 11f, and 11g can perform a vertical movement operation (Z-direction movement operation) independently of each other. In addition, the three irradiation units 11e, 11f, and 11g can perform a swinging operation (rotating operation around the axis AY parallel to the Y axis) independently of each other.

  The irradiation unit 11e on the −Y end side has one irradiation port RP1, and the irradiation unit 11g on the + Y end side also has one irradiation port RP4. The irradiation unit 11f at the center in the Y direction has two irradiation ports RP2 and RP3. In other words, the plurality (four) of irradiation ports (unit irradiation units) RP1 to RP4 are separately provided in a plurality (three) of irradiation units 11e, 11f, and 11g.

  In the fifth embodiment, a beam irradiation unit 11 having four irradiation ports (unit irradiation units) RP1 to RP4 irradiates beams from the positions PG1 and PG2 while swinging around the axis AY, thereby forming a belt-like shape. A mode of irradiating a beam to the region (elongated region) RG is illustrated. In the following, beam irradiation (beam irradiation from the position PG1) on the workpiece 91 of both the workpieces 91 and 92 will be described in detail. Beam irradiation (beam irradiation from the position PG2) is performed.

  FIG. 42 is a diagram showing a plurality of strip regions RG51, RG52, RG53, and RG54 corresponding to the irradiation ports RP1, RP2, RP3, and RP4, respectively.

  As shown in FIGS. 42 and 43, the irradiation port RP1 of the irradiation unit 11e irradiates the band-shaped region RG51 (the band-shaped region in charge of the irradiation port RP1) with a beam. Specifically, similarly to the beam irradiation operation with the swinging operation of the beam irradiation unit 11 in the fourth embodiment, the beam irradiation operation with the swinging operation of the irradiation unit 11e is performed. More specifically, the irradiation unit 11e has an irradiation port RP1 that extends in the Y direction, and the irradiation region (long region in the Y direction) RE in which the beam from the irradiation port RP1 is relatively long (see FIG. 39) (see also 39). Then, along with the swinging movement around the axis parallel to the Y axis, the horizontally long irradiation region RE irradiated from the irradiation port RP1 gradually moves in the X direction. As a result, beam irradiation is performed on the strip-shaped region RG51 that is long in the X direction.

  Similarly, the irradiation port RP4 of the irradiation unit 11g irradiates the beam to the band-shaped region RG54 (the band-shaped region in charge of the irradiation port RP4) with a swinging operation.

  Further, the irradiation unit 11f irradiates the band-like regions RG52 and RG53 with a beam while swinging. More specifically, the irradiation port RP2 of the irradiation unit 11f irradiates the band-shaped region RG52 (the band-shaped region in charge of the irradiation port RP2) with the swinging motion of the irradiation unit 11f. The irradiation port RP3 of the irradiation unit 11f irradiates a beam to the band-shaped region RG53 (the assigned band-shaped region of the irradiation port RP3) with the swinging operation of the irradiation unit 11f.

  Thus, in the irradiation process with respect to the workpiece 91, the plurality of irradiation ports RP1 to RP4 respectively emit energetic particles toward the assigned band-like region (the band-like region that the user is in charge of) of the plurality of band-like regions RG51 to RG54. Irradiate.

  Here, the region (synthesized region) obtained by synthesizing the four belt-like regions RG51, RG52, RG53, and RG54 has a shape that approximates the joining surface region of the article 91 having a substantially circular shape. In other words, the bonding surface area of the workpiece 91 having a substantially circular shape is approximated by an area obtained by synthesizing the plurality of band-shaped areas RG1 to RG4. Therefore, the beam from the irradiation units 11e, 11f, and 11g is irradiated to the minimum area, and an unnecessary area (an external area of the circular bonding surface, for example, an upper area (+ X side area) of the belt-shaped area RG51) and Beam irradiation to the lower region (−X side region) is suppressed. Therefore, it is possible to suppress the occurrence of metal contamination (reattachment of the metal material scraped off by beam irradiation on the peripheral member to the bonding surface) caused by unnecessary beam irradiation on the peripheral member.

  In addition, in the said 5th Embodiment, although the four irradiation ports RP1-RP4 are illustrated in the example provided in three irradiation units 11e, 11f, and 11g, it is not limited to this. For example, as shown in FIGS. 44 and 45, four irradiation ports RP1 to RP4 may be provided in one irradiation unit 11h and may be simultaneously swung. In this case, if the irradiation state of energy irradiation (beam irradiation on state) and the non-irradiation state of the energy irradiation (beam irradiation off state) can be switched independently for each of the irradiation ports RP1 to RP4. Good.

  More specifically, when the beam irradiation region at each time point moves in the X direction as the beam irradiation unit 11 swings, the irradiation of the beams from the irradiation ports RP1 to RP4 is turned on along with the movement operation. The state and the off state are switched independently of each other.

  For example, as shown in FIG. 45, when the beam irradiation region RE (specifically, the center position in the X direction) at a certain point in time exists in the section SC1 on the front side (as viewed from the beam irradiation unit 11 side), Beam irradiation from the irradiation ports RP2 and RP3 is turned on, and beam irradiation from the irradiation ports RP1 and RP4 is turned off. Thereafter, in the central section SC2, beam irradiation from all the irradiation ports RP1 to RP4 is turned on. In the last section SC3, the beam irradiation from the irradiation ports RP2 and RP3 is turned on again, and the beam irradiation from the irradiation ports RP1 and RP4 is turned off again. In addition, hatching area | region EP1 in FIG. 45 is an area | region where a beam is not actually irradiated when the beam irradiation from each irradiation port RP1, RP4 is made into an OFF (OFF) state.

  Also by such a modification, it is possible to perform beam irradiation similar to that of the fifth embodiment.

  The beam irradiation used in the fifth embodiment is particularly preferably atomic beam irradiation as in the fourth embodiment. According to this, it is possible to further suppress metal contamination.

  In addition, here, the plurality of irradiation ports (unit irradiation portions) RP1 to RP4 are arranged side by side along the Y direction perpendicular to the extending direction (X direction) of the band-shaped region (see FIG. 38) and have an elongated shape. Although the extending direction of each irradiation port which has has the aspect which is a Y direction is illustrated, it is not limited to this. For example, the extending direction of each irradiation port having an elongated shape may be a direction (X direction) perpendicular to the Y direction that is the arrangement direction of the irradiation ports.

  Moreover, although the aspect in which the length in the Y direction of several irradiation port (unit irradiation part) RP1-RP4 is mutually equivalent is illustrated here, it is not limited to this, A several irradiation port (unit irradiation part) ) In the Y direction may be different from each other.

<6. Sixth Embodiment>
The sixth embodiment is a modification of the second embodiment. Below, it demonstrates centering on difference with 2nd Embodiment.

  In the said 2nd Embodiment, the aspect by which a beam is irradiated from the beam irradiation part 11 with respect to the target member TG hold | maintained at the stage 12, and the sputtering process is performed is illustrated.

  On the other hand, in the sixth embodiment, a mode in which a beam is irradiated from the beam irradiation unit 11 to the target member TG disposed in the vicinity of the stage 12 and a sputtering process is executed is illustrated.

  46 to 50 are views showing the state of the sputtering process according to the sixth embodiment.

  46 is a diagram showing the inside of the apparatus as seen from the side, and FIG. 47 is a diagram showing the inside of the apparatus as seen from the upper surface side. FIG. 48 is a diagram illustrating a state where argon atoms flying from the beam irradiation unit 11 collide with the target member TG.

  As shown in FIGS. 46 and 47, the stage 12, the target member TG, and the beam irradiation unit 11 are arranged in this order in the X direction (from the −X side to the + X side).

  As shown in FIG. 46, the beam irradiation unit 11 irradiates a beam (for example, an argon atom beam) toward a target member TG disposed obliquely downward from a relatively upper position. Then, silicon atoms and the like are ejected and scattered by collision with argon on the surface of the target member TG.

  Silicon atoms ejected from the surface of the target member TG by irradiation with a beam of argon or the like diffuse toward a relatively wide range. However, as shown in FIG. 48, when the target member TG is irradiated with a beam at an incident angle β (an angle with respect to the normal of the surface of the target member TG), it is particularly large in the direction of the reflection angle β equal to the incident angle β. The silicon atoms are ejected and proceed. In the sixth embodiment, the target member TG is not at a position directly below the head 22 (in other words, at the stage 12) but at a position shifted from the position of the stage 12 toward the beam irradiation unit 11 side. To do. Then, as shown in FIG. 46, many silicon atoms and the like that are ejected from the target member TG and travel in the direction of the reflection angle β can be made to reach the bonding surface of the article 91 to be bonded. That is, it is possible to efficiently generate a silicon layer (film) on the workpiece 91.

  Further, in the sixth embodiment, the beam irradiation unit 11 further irradiates the target member TG with the beam while accompanying the lowering operation and the posture angle changing operation. Specifically, beam irradiation is performed with a state transition from the state of FIG. 49 to the state of FIG. FIG. 49 is a diagram illustrating a state in which the sputtering process is performed around the right end side (the front side as viewed from the beam irradiation unit 11) of the bonding surface of the workpiece 91. FIG. 50 is a diagram illustrating a state in which the sputtering process is performed around the left end side (the back side as viewed from the beam irradiation unit 11) of the bonding surface of the workpiece 91.

  As shown in FIG. 49, first, the beam irradiation unit 11 irradiates a beam from a relatively upper position PG3 toward a target member TG disposed obliquely below. FIG. 49 shows a state in which silicon atoms and the like ejected from the surface of the target member TG by the beam irradiated at the incident angle β1 mainly travel in the direction of the reflection angle β1. At this time, silicon atoms and the like proceed toward the right end side of the object to be bonded 91 (front side as viewed from the beam irradiation unit 11), and silicon atoms and the like adhere to the right end side of the object to be bonded 91. That is, the sputtering process is performed around the right end side of the article 91.

  Thereafter, the beam irradiation unit 11 gradually changes the posture angle so that the beam reaches the target member TG while descending from the relatively upper position PG3 to the relatively lower position PG4. Specifically, the posture angle of the beam irradiation unit 11 is changed so that the beam incident angle β is gradually changed from a relatively small value β1 (see FIG. 49) to a relatively large value β2 (see FIG. 50). It will be changed gradually.

  FIG. 50 shows a state in which the beam irradiation unit 11 irradiates a beam from the position PG4 below the position PG3 toward the target member TG disposed obliquely below. Specifically, it is shown that silicon atoms and the like ejected from the surface of the target member TG by the beam irradiated at the incident angle β2 (> β1) mainly travel in the direction of the reflection angle β2. At this time, silicon atoms or the like proceed toward the left end side of the object to be bonded 91 (a remote side (back side) as viewed from the beam irradiation unit 11), and silicon atoms or the like adhere to the left end side of the object to be bonded 91. To do. That is, the sputtering process is performed around the left end side of the workpiece 91.

  Thus, from the state of FIG. 49 to the state of FIG. 50, the beam irradiation unit 11 irradiates the beam while changing the irradiation angle. According to this, it is possible to perform the sputter | spatter process more uniformly made uniform on the joining surface of the to-be-joined thing 91. FIG.

  The beam irradiation used in the sixth embodiment is particularly preferably atomic beam irradiation as in the fourth embodiment. In particular, also in the sputtering process, unnecessary beam irradiation to the region other than the target member TG can be suppressed, so that metal contamination can be suppressed.

  Moreover, in 6th Embodiment, although the aspect with which energy particle | grains are irradiated toward the target member TG arrange | positioned in the vicinity of the stage 12 is illustrated, it is not limited to this. For example, the energy particles may be irradiated toward the target member TG disposed in the vicinity of the head 22. In this case, the same operation may be executed with the top and bottom inverted.

  Thus, by irradiating the energy particles toward the target member TG disposed in the vicinity of one of the holding portions 12 and 22, the target member TG together with the energy particles reflected by the target member TG. Is scattered toward the sputtering object (one of the objects to be bonded 91 or 92) held in the other holding part of the two holding parts, and the sputtering process is performed on the sputtering object. Good.

  Moreover, in the said 2nd Embodiment and 6th Embodiment, the sputtering process is performed after the surface activation process. According to this, since the impurities are removed and then sputtered, the adhesion strength of the sputtered material is increased. Further, after sputtering, other materials may be dispersed or other materials may be sputtered again. According to this, it is possible to further increase the bonding strength. For example, after sputtering of a silicon (Si) thin film by beam irradiation, the bonding strength can be increased or the bonding environment can be improved by dispersing iron (Fe) by further beam irradiation (more specifically in the atmosphere) Alternatively, bonding in a nitrogen atmosphere is possible. More specifically, as the target member TG in FIG. 46, a plate-like member whose upper surface side is formed of silicon (Si) and whose lower surface side is formed of iron (Fe) is used. Then, as shown in FIG. 46, after a silicon thin film is formed on the surface of the workpiece 91 by beam irradiation with respect to silicon (Si) on the upper surface side of the target member TG, the target member TG is turned upside down. The surface of the article to be bonded 91 may be doped (disperse iron) by beam irradiation of iron on the upper surface (lower surface before inversion) side of the target member TG.

<7. Seventh Embodiment>
The seventh embodiment is a modification of the first embodiment.

  In the seventh embodiment, as shown in FIG. 51, a blocking member 81 that blocks irradiation of energetic particles from the beam irradiation unit 11 to the holding unit 12 is provided between the beam irradiation unit 11 and the holding unit 12. The embodiment to be illustrated is illustrated. According to this, unnecessary beam irradiation to the holding portion 12 can be favorably avoided or suppressed.

  FIG. 51 is a schematic diagram illustrating an internal configuration of the bonding apparatus 1 (1G) according to the seventh embodiment. The same applies to FIGS. 52 to 54.

  Note that here, contrary to the first embodiment, the surface activation treatment is first performed on the workpiece 92 held by the holding portion 22, and then the bonding is held by the holding portion 12. A case where the surface activation process is performed on the object 91 will be described.

  The blocking member 81 is provided between the holding unit 12 and the beam irradiation unit 11 disposed at the position PG2. Specifically, the blocking member 81 is disposed at a predetermined position on the holding unit 12 side that is separated from the holding unit 22 in the separating direction (Z direction) between the holding unit 12 and the holding unit 22. In short, the blocking member 81 is disposed in the vicinity of the holding portion 12 (a predetermined position on the lower side). The blocking member 81 is a plate-like member having an elongated shape (rectangular shape) extending along the Y-axis direction, and is provided to be rotatable around an axis AY3 parallel to the Y-axis.

  As shown in FIG. 51, the blocking member 81 has a posture angle such that the main surface of the plate-shaped member faces the beam irradiation unit 11 before the beam irradiation by the beam irradiation unit 11 is started. In other words, the blocking member 81 is temporarily fixed in a state where the blocking member 81 is set up perpendicular to the XY plane.

  In such a state, the beam irradiation unit 11 starts irradiation. Specifically, irradiation of energetic particles from the beam irradiation unit 11 in a state where the blocking member 81 provided between the beam irradiation unit 11 and the holding unit 12 blocks irradiation of energetic particles from the beam irradiation unit 11. Is started. The beam irradiation unit 11 is not directed toward the holding unit 22 but toward the holding unit 12 (more specifically, toward the blocking member 81 existing between the beam irradiation unit 11 and the holding unit 12) in the horizontal direction. Irradiate energetic particles. Therefore, it is possible to avoid or suppress the irradiation of unnecessary energy particles to both the holding units 12 and 22.

  Here, the beam irradiation from the beam irradiation unit 11 is still in an unstable state such as having a relatively large variation in irradiation intensity immediately after the start of irradiation. That is, the beam irradiation from the beam irradiation unit 11 is unstable in the initial emission state.

  Beam irradiation toward the blocking member 81 is continued for a period from immediately after the start of beam irradiation (immediately after the start of emission of energetic particles) until the beam irradiation becomes stable (until the initial release state of energetic particles becomes stable). Is done. As described above, the beam irradiation unit 11 irradiates the shielding member 81 with energetic particles in a period in which the beam irradiation immediately after the start of beam irradiation is unstable. In short, the blocking member 81 is used as a dummy irradiation target member. According to this, irradiation of unstable energetic particles to both the holding parts 12 and 22 is avoided or suppressed.

  Note that the stability of beam irradiation is determined, for example, by determining the degree of fluctuation in the current value and / or voltage value of the beam irradiation unit 11. Alternatively, it may be determined that the beam irradiation is stable as a predetermined time (a predetermined stabilization period) elapses. These stability determinations may be performed by an operator of the joining apparatus 1 or may be automatically performed by the joining apparatus 1.

  Then, after the beam irradiation is stabilized over time (after the initial release state of energetic particles is stabilized), the beam irradiation unit 11 changes the attitude angle of the beam irradiation unit 11. Specifically, as shown in FIG. 52, the beam irradiation unit 11 changes its posture angle obliquely upward, and irradiates energetic particles toward the workpiece 92 held by the holding unit 22. The blocking member 81 does not exist at the side of the relatively upper space in the space (gap) between the holding units 12 and 22, and the energy from the beam irradiation unit 11 toward the upper holding unit 22. The particles pass through the space above the blocking member 81 (not blocked by the blocking member 81). On the other hand, even in this state, the blocking member 81 is present on the side of the relatively lower space in the space between the two holding portions 12 and 22, and the energetic particles to the lower holding portion 12. The state where the irradiation is blocked by the blocking member 81 is maintained.

  In the state of FIG. 52, energy particles are irradiated toward the workpiece 92 held by the holding unit 22, while irradiation of the energy particles to the holding unit 12 is blocked by the blocking member 81. Therefore, unnecessary irradiation of energetic particles to the holding portion 12 (and the workpiece 91) can be avoided or suppressed. On the contrary, the blocking member 82 described later has a position and posture so as not to block the beam irradiation from the beam irradiation unit 11 toward the holding unit 22.

  As described above, the blocking member 81 is provided in the vicinity of the lower holding unit 12, and the object to be bonded held by the holding unit 22 in a state where the beam irradiation from the beam irradiation unit 11 to the holding unit 12 is blocked. 92 is subjected to a surface activation treatment.

  Thereafter, the beam irradiation by the beam irradiation unit 11 is temporarily interrupted, and the beam irradiation unit 11 moves from the lower position PG2 to the upper position PG1.

  Then, the surface activation process is performed on the workpiece 91 held by the holding unit 12 this time. In this case, the blocking member 82 (FIG. 53) is used in place of the blocking member 81, and the same operation as described above is performed to avoid unnecessary beam irradiation on the workpiece 91 held by the holding unit 12. Or suppressed.

  The blocking member 82 is disposed between the holding unit 22 and the beam irradiation unit 11 arranged at the position PG1 in the vicinity of the upper holding unit 22. Specifically, the blocking member 82 is disposed at a predetermined position (a position near the holding unit 22) on the holding unit 22 side that is separated from the holding unit 12 in the separation direction (Z direction) between the holding unit 12 and the holding unit 22. Yes. The blocking member 82 is a plate-like member having an elongated shape (rectangular shape) extending along the Y-axis direction, and is provided to be rotatable around an axis AY4 parallel to the Y-axis. As shown in FIG. 53, the blocking member 82 rotates about 90 degrees around the axis AY4 before resuming the beam irradiation by the beam irradiation unit 11, so that the main surface of the plate-like member is perpendicular to the XY plane. Temporarily fixed in an upright state.

  And the beam irradiation from the beam irradiation part 11 is restarted. At this time, the beam irradiation is blocked by the blocking member 82 provided between the holding unit 22 and the beam irradiation unit 11, and the energy particles from the beam irradiation unit 11 are not irradiated to the holding unit 22.

  When the beam irradiation is stabilized over time, the beam irradiation unit 11 changes the attitude angle of the beam irradiation unit 11 in the future. Specifically, as shown in FIG. 54, the beam irradiation unit 11 changes its posture angle obliquely downward, and irradiates energetic particles toward the workpiece 91 held by the holding unit 12. Also in this state, the state in which the irradiation of the energetic particles to the holding portion 22 is blocked by the blocking member 82 is maintained. The blocking member 81 rotates 90 degrees around the axis AY3, and conversely has a position and posture that does not block beam irradiation from the beam irradiation unit 11 toward the holding unit 12.

  In this way, the surface activation process is performed on both the objects to be bonded 91 and 92, and then the bonding process of both the objects to be bonded 91 and 92 is performed.

  The above idea is particularly useful when ion beam irradiation is used as beam irradiation. Ion beam irradiation has a characteristic that its directivity is relatively low and relatively easy to diffuse, and can be used for irradiation of energetic particles to a relatively large object to be joined. On the other hand, by using the blocking member 81 as described above, an unnecessary beam to the holding portion 12 (and the workpiece 91) can be obtained even when ion beam irradiation having relatively low directivity is used. Irradiation can be avoided or suppressed. Similarly, by using the blocking member 82 as described above, unnecessary beam irradiation to the holding portion 22 (and the workpiece 92) can be avoided or suppressed.

  Moreover, said thought can also be combined with each thought, such as 2nd Embodiment-5th Embodiment.

<8. Eighth Embodiment>
The eighth embodiment is a modification of the sixth embodiment (and the seventh embodiment).

  In the eighth embodiment, an example in which the target member TG of the sixth embodiment is used as a blocking member (see the seventh embodiment) is illustrated.

  As shown in FIG. 55, the target member TG has the main surface of the plate-like member on the beam irradiation unit 11 side (as in FIG. 51 of the seventh embodiment) before the beam irradiation by the beam irradiation unit 11 is started. It has a posture angle that points to In other words, the target member TG is temporarily fixed in a state where the target member TG is set up perpendicular to the XY plane.

  In such a state, the beam irradiation unit 11 starts irradiation. Specifically, the energy from the beam irradiation unit 11 in a state where the target member TG provided between the holding unit 12 and the beam irradiation unit 11 at the position PG2 blocks the irradiation of energetic particles from the beam irradiation unit 11. Particle irradiation is started. Further, the beam irradiation unit 11 is not directed toward the holding unit 22 but toward the holding unit 12 (more specifically, toward the target member TG present at a position between the beam irradiation unit 11 and the holding unit 12). ) Irradiate energetic particles. Such irradiation is continued until the initial release state of energetic particles is stabilized. Thereby, unnecessary energy particle irradiation to both the holding parts 12 and 22 is avoided or suppressed. Thus, the target member TG is used as a blocking member.

  When the beam irradiation is stabilized over time, the beam irradiation unit 11 changes the position and posture of the beam irradiation unit 11 this time. Specifically, the beam irradiation unit 11 moves (rises) the position of the beam irradiation unit 11 upward, and changes the posture angle of the beam irradiation unit 11 obliquely downward.

  Further, the target member TG is also rotated 90 degrees around the axis AY5 to change its posture angle, and the target member TG is changed from the vertical state to the horizontal state (specifically, the main surface of the target member TG is horizontal with respect to the XY plane). State).

  In the state shown in FIG. 56, the beam irradiation unit 11 irradiates energetic particles toward the target member TG whose posture angle is changed (has a horizontal posture). Thereby, the constituent material of the target member TG is scattered toward the workpiece 91 (sputtering target) held by the holding unit 22 together with the energy particles reflected by the target member TG, so that the sputtering target A sputtering process is performed. As described above, the sputtering process can be performed using the target member TG used as the blocking member in FIG. In other words, the member TG is used as a sputtering target member (see FIG. 56) and also as a blocking member (see FIG. 55).

  Thereafter, instead of the workpiece 91, the workpiece 92 is held by the holding unit 22 and the same processing is performed. Specifically, a process of using the member TG as the blocking member and the target member is executed.

  In the eighth embodiment, the target member TG is provided in the vicinity of the lower holding unit 12 and the mode in which the beam irradiation from the beam irradiation unit 11 to the holding unit 12 is blocked is exemplified. It is not limited to this. For example, the target member TG may be provided in the vicinity of the upper holding unit 22 so that the beam irradiation from the beam irradiation unit 11 to the holding unit 22 is blocked. In this case, the positional relationship between the beam irradiation unit 11 and the target member TG may be reversed upside down.

  Further, the target member TG in the eighth embodiment may be arranged in a slightly inclined state by rotating around the Y axis (counterclockwise in FIG. 56) with respect to the horizontal state (see FIG. 56). Good. Here, in the sixth embodiment, with reference to FIG. 48, when a beam is irradiated onto the target member TG at an incident angle β (an angle with respect to the normal to the surface of the target member TG), a reflection angle β equal to the incident angle β is obtained. He explained that in the direction, many silicon atoms are expelled and proceed. However, in more detail, regarding the constituent material (silicon atom or the like) ejected from the target member TG, there are relatively many components that are reflected at a reflection angle smaller than the reflection angle β. Therefore, when beam irradiation is performed in an arrangement as shown in FIG. 46 (see also FIG. 57), the amount of deposits by sputtering processing is relatively large on the right side (target side) of the workpiece 91. In short, sputtering deposits are relatively unevenly distributed to the right. Note that the broken lines in FIG. 57 schematically show how silicon atoms and the like ejected from the surface of the target member TG are scattered. In addition, the thick line attached to the lower right portion of the bottom surface 91 of FIG. 57 schematically shows (exaggeratedly) a relatively large amount of sputtering deposits. In such a case, the target member TG is not arranged in a horizontal state as shown in FIG. 46 (see also FIGS. 56 and 57), but the target member TG is arranged slightly inclined with respect to the horizontal state. You may make it do. Specifically, as shown in FIG. 58, if the posture angle of the target member TG is changed so that the normal vector VZ of the target member TG is inclined toward the holding unit 22 with respect to the Z direction. Good. According to this, it is possible to improve the processing uniformity within the surface of the workpiece 91 (or the workpiece 92) held by the holding portion 22.

<9. Ninth Embodiment>
The ninth embodiment is a modification of the sixth embodiment. Below, it demonstrates centering on difference with 6th Embodiment.

  In the said 6th Embodiment, the aspect by which sputtering processing is performed is demonstrated by irradiating the beam toward the target member TG, with the beam irradiation part 11 accompanied by the descent | fall operation | movement and the attitude | position change operation ( 49 and FIG. 50).

  In the ninth embodiment, the sputtering process is performed by irradiating energetic particles toward the target member TG while gradually changing the posture angle of the target member TG. Specifically, beam irradiation by the beam irradiation unit 11 is performed while gradually changing the posture angle of the target member TG from the state of FIG. 59 to the state of FIG. The position and posture of the beam irradiation unit 11 may remain constant over the change period of the posture angle of the target member TG.

  In FIG. 59, the beam irradiation from the beam irradiation unit 11 is performed in a state where the normal vector VZ of the target member TG faces the + Z direction. In this state, the sputtering process is performed mainly on the right end side (front side as viewed from the beam irradiation unit 11) of the surface of the workpiece 91.

  On the other hand, in FIG. 60, the target member TG rotates counterclockwise around the axis AY5, and the normal vector of the target member TG is on the left side of the + Z direction (on the opposite side to the beam irradiation unit 11 side, in other words, Beam irradiation from the beam irradiation unit 11 is performed in a state inclined to the holding unit 22 side (−X side). In this state, the sputtering process is performed mainly on the relatively left end side (the back side as viewed from the beam irradiation unit 11) of the surface of the workpiece 91.

  In this way, from the state of FIG. 59 to the state of FIG. 60, the beam irradiation unit 11 irradiates the beam while changing the attitude angle of the target member TG. Thus, it is possible to perform a sputtering process that is well uniformized.

<10. Modified example>
Although the embodiments of the present invention have been described above, the present invention is not limited to the contents described above.

  For example, in each of the above embodiments, a mode in which the beam irradiation unit 11 is moved up and down and rocked by the double shaft type drive mechanism 60A (see FIG. 3) is exemplified, but the present invention is not limited to this.

  Specifically, as shown in FIG. 61, the beam irradiation unit 11 may be moved up and down and rocked using a parallel link type drive mechanism 60B. The drive mechanism 60B includes a Z direction first drive unit 61B and a Z direction second drive unit 62B. The Z direction first drive unit 61B drives the elevating member 63B in the Z direction (vertical direction), and the Z direction second drive unit 62B drives the elevating member 64B in the Z direction (vertical direction). When the elevating member 63B and the elevating member 64 are moved the same distance in the Z direction, the position of the beam irradiation unit 11 in the Z direction is changed. Moreover, the attitude angle around the axis AY of the beam irradiation unit 11 is changed by moving the elevating member 63B and the elevating member 64 at different distances in the Z direction.

  Alternatively, instead of the vertical movement type drive mechanisms 60A and 60B as described above, a rotary type drive mechanism 60C as shown in FIG. 62 may be provided.

  A drive mechanism 60C in FIG. 62 includes a rotational drive unit 71C for position change, a first drive unit 61C for swinging, and a second drive unit 62C for swinging. The rotation drive unit 71C is connected to the beam irradiation unit 11 via a drive shaft 73 parallel to the X axis and a connection member 74 extending from the drive shaft 73 in the vertical direction. When the drive shaft 73 is rotated 180 degrees around the central axis AX by the rotation drive unit 71C, the beam irradiation unit 11 connected via the connection member 74 is moved from the position PG1 to the position PG2 (or conversely from the position PG2). Move to PG1).

  Further, when the beam irradiation unit 11 is present at the upper position PG1, the first driving unit 61C drives the lifting member 63C downward in the Z direction (vertical direction), so that the lower end portion of the lifting member 63C becomes the beam irradiation unit. A downward force is applied to the eleven protruding portions 11Z. Thereby, the beam irradiation part 11 rotates clockwise against the counterclockwise biasing force previously applied to the beam irradiation part 11. The first drive unit 61C can control the attitude angle of the beam irradiation unit 11 by controlling the lower end position of the elevating member 63C.

  Similarly, when the beam irradiation unit 11 exists at the lower position PG2, the second driving unit 62C drives the lifting member 64C upward in the Z direction (vertical direction), so that the upper end of the lifting member 64C is irradiated with the beam. An upward force is applied to the protruding portion 11Z of the portion 11. As a result, the beam irradiation unit 11 rotates counterclockwise against the clockwise biasing force previously applied to the beam irradiation unit 11. The second drive unit 62C can control the attitude angle of the beam irradiation unit 11 by controlling the upper end position of the elevating member 64C.

  Moreover, in each said embodiment, although the case where the joining surface of the to-be-joined objects 91 and 92 is formed with silicon (Si) etc. is illustrated, it is not limited to this, Other various materials are used. It may be formed. For example, the bonding surface of each object to be bonded may be formed of a material such as gallium arsenide (GaAs), gallium nitride (GaN), lithium (Li), or gold (Au).

  The ideas of the third to fifth embodiments are not limited to the surface activation process of the first embodiment, but also the sputtering process of the second and sixth embodiments. It is applicable to. When the idea of the fourth embodiment is applied to the sputtering process of the sixth embodiment, the beam irradiation unit 11 is changed along with the change of the swing angle in the swing operation of the beam irradiation unit 11 as described above. Is preferably changed based on the irradiation intensity of the energy particles in the irradiation region irradiated with the energy particles by the beam irradiation unit 11. In this case, the irradiation intensity of the energetic particles is measured by measuring the deposition amount (specifically, the deposition amount per unit time) of the substance ejected from the target member TG and deposited on the object to be bonded according to the irradiation of the energy particles. Can be measured indirectly. Similarly, in the fourth embodiment, the irradiation intensity of energetic particles can be indirectly measured by measuring the etching amount (specifically, the etching rate) of the bonded object 91. In other words, the irradiation intensity of energetic particles can be converted into an etching amount or a deposition amount.

DESCRIPTION OF SYMBOLS 1 Joining apparatus 2 Vacuum chamber 3 Load lock chamber 4 Inversion part 11, 11A, 11B, 11E Beam irradiation part 11e, 11f, 11g, 11h Irradiation unit 11L Link mechanism part 11Z Protrusion part 12 Stage (holding part)
22 Head (holding part)
26 Z-axis raising / lowering drive mechanism 28 Position recognition unit 50 Position adjustment mechanism 60, 60A, 60B, 60C Drive mechanism PG1 Upper position PG2 Lower position RG Band-like region RP1-RP4 Irradiation port (unit irradiation unit)

Claims (29)

A joining device,
A first holding unit for holding a first workpiece;
A second holding unit that holds the second workpiece in a state of being separated from the first workpiece and facing the first workpiece;
Surface activation treatment is performed on both the first object to be bonded held by the first holding part and the second object to be bonded held by the second holding part. An irradiation unit for irradiating energetic particles individually and sequentially;
A joining means for joining the first object to be joined and the second object to be joined by relatively bringing the first holding part and the second holding part close to each other;
A joining apparatus comprising: The joining apparatus according to claim 1,
The first holding unit, the second holding unit, and the irradiation unit are arranged in the same chamber. In the joining device according to claim 1 or 2,
In the separation direction of the first holding unit and the second holding unit, the first position on the second holding unit side that is separated from the first holding unit and the second holding unit are separated from each other. Driving means for moving the irradiation unit between the second position on the first holding unit side;
Further comprising
The irradiation unit is
Irradiating energetic particles from the first position toward the first object to be joined,
A joining apparatus for irradiating energetic particles from the second position toward the second object to be joined. In the joining apparatus in any one of Claims 1 thru | or 3,
Oscillating means for oscillating the irradiation unit about a rotation axis parallel to the bonding surface of the first object to be bonded;
Further comprising
The said irradiation part irradiates energetic particles toward the said 1st to-be-joined object, accompanying the rocking | fluctuation operation | movement about the said rotating shaft by the said rocking | fluctuation means. The joining apparatus according to claim 4,
The oscillating speed of the irradiation unit is changed according to a distance between the irradiation unit and an irradiation region irradiated with energetic particles by the irradiation unit. In the joining apparatus according to claim 4 or 5,
The oscillating speed of the irradiating unit is changed according to an incident angle of energetic particles irradiated by the irradiating unit with respect to the irradiation target surface. The joining apparatus according to claim 4,
With the change of the swing angle in the swinging operation of the irradiation unit, the swinging speed of the irradiation unit depends on the irradiation intensity of the energy particles in the irradiation region irradiated with the energy particles by the irradiation unit and the swinging operation. The joining apparatus is changed so that the moving speed of the irradiation region accompanying the step is inversely proportional. In the joining apparatus in any one of Claim 4 thru | or 7,
The said irradiation part has a some unit irradiation part arranged in the direction parallel to the said rotating shaft, The joining apparatus characterized by the above-mentioned. The joining apparatus according to claim 8, wherein
The bonding surface of the first object to be bonded is approximated by a region obtained by combining a plurality of band-shaped regions respectively corresponding to the plurality of unit irradiation parts,
In the irradiation process with respect to the first object to be bonded, the plurality of unit irradiation units each irradiate energetic particles toward a responsible band-shaped region among the plurality of band-shaped regions. The joining apparatus according to claim 9, wherein
The plurality of unit irradiation units are provided separately in a plurality of irradiation units,
Each of the plurality of irradiation units can perform the swinging operation independently of each other. The joining apparatus according to claim 9, wherein
The plurality of unit irradiation units are provided in one irradiation unit and are simultaneously swung while switching between the irradiation state and the non-irradiation state of the energy particles independently of each other, thereby A joining apparatus that irradiates energetic particles toward a band-shaped region in charge. In the joining apparatus in any one of Claims 1 thru | or 11,
The irradiation unit is
Surface activity of the first object to be bonded in a state where the first object to be bonded is held by one holding part of both the first holding part and the second holding part. Processing,
In a state where the first object to be bonded is held in the one holding part and the target member for the sputtering process for the first object to be bonded is held in the other holding part among the two holding parts, A sputtering apparatus for performing a sputtering process on the first workpiece by irradiating the target member with energetic particles. The joining device according to claim 12,
The irradiation unit is held by the first holding unit after the sputtering process is performed on the first object to be bonded and the target member held by the other holding unit is removed. In addition, the energy particles for surface activation treatment are individually and sequentially applied to the objects to be bonded, which are the first object to be bonded and the second object to be bonded held by the second holding unit. Irradiation means for bonding. In the joining apparatus in any one of Claims 1 thru | or 3,
Oscillating means for oscillating the irradiation unit about a rotation axis parallel to the bonding surface of the first object to be bonded;
Further comprising
The irradiation unit is
Surface activity of the first object to be bonded in a state where the first object to be bonded is held by one holding part of both the first holding part and the second holding part. Processing,
In a state where the first object to be bonded is held in the one holding part and the target member for the sputtering process for the first object to be bonded is held in the other holding part among the two holding parts, A sputtering process is performed on the first object by irradiating energetic particles toward the target member with a swinging motion around the rotation axis by the swinging means,
The swing speed of the irradiation unit when the energetic particles are irradiated to the first region of the target member that is relatively close to the irradiation unit is the second speed of the target member. The bonding apparatus is set to be larger than a swing speed of the irradiation unit when the energetic particles are irradiated to a second region which is a region and is relatively far from the irradiation unit. In the joining apparatus in any one of Claims 1 thru | or 11,
The irradiation unit irradiates energetic particles toward a target member disposed in the vicinity of one of the holding units of the first holding unit and the second holding unit. The target material together with the energy particles reflected by the target member is a sputtering object held in the other holding part of the two holding parts, the first object to be joined and the second object A bonding apparatus for performing sputtering treatment on the sputtering object by scattering toward the sputtering object that is one of the objects to be bonded. The joining apparatus according to claim 15,
The irradiation unit irradiates energy particles toward the target member while moving in the separating direction of the two holding units and changing the posture angle of the irradiation unit, thereby reflecting the energy particles reflected by the target member And a sputtering apparatus for the sputtering target by scattering the constituent material of the target member toward the sputtering target. The joining apparatus according to claim 15,
The irradiation unit irradiates energetic particles toward the target member while changing the attitude angle of the target member, so that the constituent material of the target member and the energetic particles reflected by the target member are changed to the sputtering object. Sputtering treatment is performed on the sputtering object by scattering toward the surface. In the joining apparatus in any one of Claims 1 thru | or 17,
The said irradiation part has an atomic beam irradiation part which irradiates an atomic beam, The joining apparatus characterized by the above-mentioned. In the joining apparatus in any one of Claims 1 thru | or 11,
A blocking member that is provided between the irradiation unit and the first holding unit and blocks irradiation of the energy particles from the irradiation unit to the first holding unit;
The joining apparatus further comprising: The joining device according to claim 19,
The irradiation unit is not directed to the second holding unit until the initial release state of the energetic particles is stabilized, but to the blocking member provided between the first holding unit and the irradiation unit. Irradiating the energetic particles toward the bonding device. The joining device according to claim 20,
The blocking member is a predetermined position on the first holding unit side that is separated from the second holding unit in a direction in which the first holding unit and the second holding unit are separated from each other. Provided at a predetermined position between the first holding unit and blocking the irradiation of the energy particles from the irradiation unit to the first holding unit until the initial release state of the energy particles is stabilized;
The irradiation unit uses the blocking member whose posture angle is changed as a target member after the initial release state of the energetic particles is stabilized, and changes the position and posture of the irradiation unit toward the target member. Irradiating the energetic particles, together with the energetic particles reflected by the target member, the constituent material of the target member is a sputtering object held in the second holding unit, the first object to be joined and the A joining apparatus, wherein the sputtering target is subjected to a sputtering process by being scattered toward a sputtering target that is one of the second objects. The joining device according to claim 19,
The blocking member is a predetermined position on the first holding unit side that is separated from the second holding unit in the separation direction of the first holding unit and the second holding unit, and the irradiation unit and Provided at a predetermined position between the first holding unit,
The said irradiation part irradiates the said energy particle toward the said 2nd holding | maintenance part from the said predetermined position, The joining apparatus characterized by the above-mentioned. The joining device according to claim 20,
The blocking member is a predetermined position on the first holding unit side that is separated from the second holding unit in the separation direction of the first holding unit and the second holding unit, and the irradiation unit and Provided at a predetermined position between the first holding unit,
After the initial release state of the energetic particles is stabilized, the irradiation unit changes the irradiation angle of the irradiation unit, and thereby the irradiation of the energetic particles to the first holding unit is blocked by the blocking member. A joining apparatus that irradiates the energetic particles toward the second object to be joined held by the second holding part while maintaining the state. A joining method,
a) The first irradiation object provided in the bonding apparatus is separated from the first object to be bonded and the first object held by the first holding part of the bonding apparatus, and the first object Irradiating energy particles individually and sequentially to both objects to be bonded to the second object to be bonded held by the second holding unit of the bonding apparatus in a state of facing the objects to be bonded;
b) bringing the first holding part and the second holding part relatively close together to join the first object to be joined and the second object to be joined;
A joining method comprising: The joining method according to claim 24, wherein
Said step a)
a-1) From the first position closer to the second holding unit than the first holding unit, toward the first object to be joined held by the first holding unit, the one Irradiating energetic particles by the irradiating unit to perform surface activation treatment on the first object to be bonded;
a-2) a second portion spaced from the first position to the first holding portion side than the second holding portion in the separation direction of the first holding portion and the second holding portion; Moving the one irradiation unit to a position of
a-3) By irradiating energetic particles from the second position toward the second object held by the second holding unit by the one irradiation unit, the second Applying surface activation treatment to the object to be joined;
A bonding method characterized by comprising: The joining method according to claim 24 or claim 25,
c) prior to the step a), performing a sputtering process on the sputtering object that is either the first object to be bonded or the second object to be bonded;
With
Said step c)
c-1) Irradiating energetic particles by the one irradiation unit toward the sputtering object held by one holding unit of both the first holding unit and the second holding unit. Applying a surface activation treatment,
c-2) The target member for sputtering treatment was reflected by the target member by irradiating the target member with energetic particles in a state where the target member was held by the other holding portion of the both holding portions. Scattering the constituent material of the target member together with energetic particles toward the sputtering object, and performing a sputtering process on the sputtering object;
A bonding method characterized by comprising: The joining method according to claim 26, wherein
In the step c-2), with the swinging operation of swinging the one irradiation unit around a rotation axis parallel to the surface of the sputtering target, the one irradiation unit is directed toward the target member. Irradiated with energetic particles,
When the energetic particles are irradiated to the first region of the target member that is relatively close to the one irradiation unit, the swing speed of the one irradiation unit is the target member And the second region of the second region that is relatively far from the one irradiation unit is set to be larger than the rocking speed of the one irradiation unit when the energetic particles are irradiated. A characteristic joining method.   A semiconductor device bonded and manufactured by the bonding method according to claim 24.   A MEMS device bonded and manufactured by the bonding method according to any one of claims 24 to 27.

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