JP2003249425A - Mounting method and apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mounting method and a mounting apparatus capable of carrying out at least prescribed alignment and joint under pressure between joining members by a small mechanism in one chamber easily and of providing high-pressure joining easily if necessary. <P>SOLUTION: After relative positions of joining members are aligned in a chamber, a difference of atmospheric pressure between a first space as a space between two joining members and a second space as a space other than the first space in the chamber is utilized to join the joining members under pressure. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting method and apparatus for bonding objects to be bonded together, and more particularly to a mounting method and apparatus suitable for bonding wafers.

[0002]

2. Description of the Related Art In a mounting apparatus for bonding objects to be bonded, for example, a mounting apparatus for bonding wafers to each other, after cleaning the bonding surfaces as necessary, both objects to be bonded are brought into a predetermined accuracy range. After the alignment for alignment, the objects to be joined are joined together by pressure or the like. Conventionally, an apparatus for performing such mounting often performs each step of cleaning, alignment, and pressure bonding at different places, and performs each step as a cluster structure in which a plurality of chambers are continuous, for example. As a result, the size of the entire apparatus has increased and has become expensive.

Further, in the conventional pressure welding process, a cylinder for pressurizing the upper object to be welded and a drive system capable of controlling the torque are provided, and the upper object to be welded is provided on the lower side. The object to be joined was pressed. for that reason,
Since a backup member is provided for the lower article to be joined and the backup member is used as a reference, the lower table (holding means for the lower article to be joined),
Both the upper holding tool (holding means for the upper workpiece)
A parallelism adjusting mechanism and a vertical Z-axis adjusting mechanism were required. Therefore, the relative position adjusting mechanism at the time of aligning the two objects to be joined and the predetermined posture maintaining mechanism at the time of pressurization are complicated, large, and expensive, and this tendency tends to occur when high pressing force is required. It became more prominent.

[0004]

Therefore, an object of the present invention is to pay attention to the above-mentioned problems, and to perform at least predetermined alignment and pressure bonding of objects to be bonded in one chamber through a small mechanism. Can be done easily, and
An object of the present invention is to provide a mounting method and device that can easily cope with a case where a high pressing force is required.

[0005]

In order to solve the above-mentioned problems, a mounting method according to the present invention is a mounting method for bonding facing objects to be bonded to each other, and the objects to be bonded are joined together in one chamber. After aligning the relative positions of the objects to be bonded, the objects to be bonded are pressure-bonded to each other by a pressure difference between a first space which is a space between the objects to be bonded and a second space which is another space in the chamber. How to do it.

In a more specific aspect of the mounting method described above, the objects to be joined are arranged in a depressurized chamber so as to face each other, and the relative positions of the objects to be joined are aligned, and then the first method is performed. It is possible to seal the space with respect to the second space with an elastic member, increase the atmospheric pressure of the second space to have a pressure difference with respect to the first space, and pressurize and bond the objects to be bonded by the pressure difference. it can. Although the structure of the elastic member is not particularly limited, for example, a structure including a bellows as described below can be adopted.

Further, in the above alignment, the holding means for holding the article to be joined on the lower side is supported by abutting the actuator from the lower side, and the position of the holding means is adjusted by the operation of the actuator, and the adjustment is performed through the adjustment. A mode in which the relative positions of the objects to be bonded are aligned can be adopted. By bringing them into contact with each other, the holding means (table) and the actuator are separated from each other at the time of pressurization, and the table becomes free, so that pressurization can be performed in a form following the joint surface of the article to be joined such as a wafer. As an actuator, for example,
It is preferable to use a piezo element, which will be described later, so that the walking operation can be performed. In such an actuator, it is possible to support only the peripheral portion of the object-to-be-bonded holding means and adjust the position, and to leave a large space in the central portion. Since it can be used for both pressurization for bonding, both processes can be efficiently performed in one chamber.

Further, in the alignment, infrared rays are radiated from one side, the reflected light from the alignment marks attached to both the objects to be joined or their holding means is detected by the recognition means, and the alignment mark of the alignment mark is detected through the detection. It is preferable to read the position. However, if it is difficult to reflect infrared rays with the alignment mark,
At the time of alignment, it is also possible to irradiate infrared rays from one side and read the position of the alignment mark attached to both objects to be joined or their holding means by means of transmitted infrared rays. For example, an infrared light source may be provided above and the transmitted infrared light may be detected by the recognition means provided below.

In the present invention, the objects to be joined facing each other are not particularly limited, but the present invention is particularly effective when at least one of them is a wafer. Further, when at least one of them is a wafer, it may be a wafer that is first laminated, that is, a laminated wafer. Therefore, this method is suitable for mounting wafers one after another. Particularly, in the case of a laminated wafer, when a new wafer is bonded to the laminated wafer, if the position of the alignment mark is read by the infrared reflection method described above, it is possible to adopt a configuration in which alignment can be performed without transmitting the laminated wafer, which is preferable. is there.

However, the present invention is not limited to the case where one object to be bonded is a wafer or wafers are bonded to each other.
It is possible to mount virtually any object to be bonded, regardless of type or size, such as IC chips, semiconductor chips, optical elements, various surface mount components, resin substrates, glass substrates, film substrates, etc. Objects may be joined together, or different kinds of articles to be joined together may be joined together.

In the present invention, the bonding surface of the objects to be bonded can be cleaned in the same chamber before the alignment. For the cleaning, for example, at least one of the bonding surfaces of the objects to be bonded is cleaned by irradiation with energy waves or energy particles in a state where the degree of vacuum in the chamber is 130 × 10 ⁻³ Pa or less, and after the cleaning, the alignment, Pressure bonding may be performed. Since the cleaning is performed with the joint surfaces of both objects to be joined facing each other, both joint surfaces can be cleaned substantially simultaneously.

Examples of the energy wave or energy particles for cleaning include plasma (including atmospheric pressure plasma), ion beam, atomic beam, radical beam,
Although any of the lasers can be used, it is preferable to use plasma (including atmospheric pressure plasma) and ion beam because they are easy to handle and spread over a wide angle.

In the present invention, when the objects to be joined are joined together, heating may be used in combination in order to further improve the reliability of the joining.

The mounting apparatus according to the present invention is a mounting apparatus for bonding opposed objects to be bonded together, and an alignment means for aligning the relative positions of the objects to be bonded to one chamber and both bonding in the chamber. The first space between things
And a second space, which is another space, are provided with pressure bonding means for bonding the objects to be bonded by the pressure difference.

In this mounting apparatus, there is a decompression means for decompressing the inside of the chamber to a predetermined degree of vacuum, and the pressure bonding means, after the alignment by the alignment means,
An elastic member that seals the first space with respect to the second space may be provided. For the elastic member,
As mentioned above, those with bellows can be used.

As the alignment means, it is preferable that the alignment means has an actuator which is brought into contact with a holding means for holding a lower object to be joined from the lower side and which is movable to adjust the position of the holding means. As the actuator, as described above, it is preferable to use a piezoelectric element as will be described later so that the walking operation can be performed.

Further, the alignment means irradiates infrared rays from one side, detects reflected light from the alignment marks attached to both objects to be bonded or their holding means, and detects the position of the alignment mark through the detection. Those having a readable recognition means are preferable. Further, as the alignment means, a means for irradiating infrared rays from one side and a recognition means capable of reading the positions of the alignment marks attached to both objects to be bonded or their holding means by means of transmitted infrared rays may be configured. it can.

This mounting apparatus is particularly suitable when at least one of the opposing objects to be bonded is a wafer, and also includes the case where one of them is a laminated wafer which has been laminated first.

Further, this mounting apparatus can include a cleaning means, and as the cleaning means, for example, a decompression means for reducing the degree of vacuum in the chamber to 130 × 10 ⁻³ Pa or less and the alignment means are used. Before the alignment, an irradiation unit for irradiating the bonding surface of at least one of the objects to be bonded with energy waves or energy particles can be provided.

In such a mounting method and apparatus according to the present invention, since at least alignment and pressure bonding can be performed in one chamber, the entire apparatus becomes small and inexpensive. Further, since both steps can be substantially continued as they are in the same chamber, the carrying step and the like are not required and the steps can be simplified. Further, since the objects to be joined are pressure-bonded to each other by the pressure difference between the first space and the second space, the device itself including this chamber can be configured as a cylinder structure for pressurization, and the pressure load for pressurization can be increased. Since a large area can be taken, even high pressure can be easily applied, and even when a high pressure is required, it can be dealt with without problems.

Further, in the pressurizing structure constituted by this cylinder structure, since it is possible to leave a large central portion which is a pressure load portion, it is possible to facilitate the alignment by increasing the mark reading area. Will also be possible.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings. 1 to 6 show a mounting apparatus according to an embodiment of the present invention, and particularly show a case where wafers are bonded to each other. 1 and 2 show each example of the alignment process, FIGS. 3 and 4 show an actuator used therefor, and FIGS. 5 and 6 show an example of the pressure bonding process together with the apparatus. Figure 1
In the mounting apparatus 1 shown in FIG. 2, the case where the upper wafer 2 and the lower wafer 3 are aligned as the objects to be bonded is shown. The upper wafer 2 is held by the holding means 4, and the lower wafer 3 is held by the holding means 5. In this embodiment, the bonding surfaces of the two wafers 2 and 3 are opposed to each other and are arranged and held in one chamber 6. For example, the chamber 6 has a vacuum degree of 130
It is configured as a vacuum chamber capable of controlling a pressure of × 10 ^-3 Pa or less.

The holding means 5 for the lower wafer 3 is formed in a disk shape in this embodiment, and is supported by an actuator 7 which is in contact with the lower side. When the actuator 7 is operated, the holding means 5 is held. The position can be adjusted. Through this position adjustment, the relative positions of the upper and lower wafers 2 and 3 are aligned. The actuator 7 is configured by a walking table structure capable of adjusting its position through a walking motion as described later, and the holding means 5 in which the actuator 7 does not exist has a large central portion. ing. The holding means 5 can be moved in the vertical direction by the elevating means 8.

Between the upper and lower holding means 4 and 5, a first space 9 which is a space between the upper and lower wafers 2 and 3 facing each other and the facing upper and lower holding means 4 and 5 around the upper and lower holding means 4 and 5, and in the other chamber 6 is provided. An elastic member 11 having a bellows structure is provided, which is capable of partitioning the second space 10, which is a space, from each other and airtightly sealing the two. In this embodiment, the elastic member 11 is provided on the upper holding means 4, and is configured to be movable downward during the pressure bonding process described below. In the alignment process shown in FIG. 1, a gap is formed between the lower end of the elastic member 11 and the upper surface of the holding means 5, and the first space 9 and the second space 10 are formed.
Are communicating without being sealed.

In the alignment process shown in FIG. 1, in this embodiment, the lower wafer 3 is first raised by the elevating means 8 together with the holding means 5 and brought close to the upper wafer 2 with a minute gap. In this state, the relative positions of the two wafers 2 and 3 are adjusted within a predetermined accuracy range. For alignment, the recognition marks for alignment provided on both wafers 2 and 3 or / and their holding means 4 and 5 are read, and the relative positional relationship between them is detected. In the present embodiment, the recognition means 12 which is an infrared camera having an infrared light source positioned below allows the lower holding means 5 to pass therethrough, and infrared rays reflected from both wafers 2 and 3 cause the alignment marks to be aligned. (Recognition mark) is detected. When the reflection is difficult, an infrared light source 13 is arranged above as shown by a chain double-dashed line in FIG. 1, and infrared rays emitted from above are transmitted through the holding means 4 and 5 and both wafers 2 and 3. Alternatively, each alignment mark may be detected by the recognition means 14 including an infrared camera via the transmitted infrared rays.

In the alignment process and the subsequent bonding process, for example, as shown in FIG. 2, another wafer 2 is added to the previously laminated wafer 21.
It is also possible to align and join the two. By sequentially performing this operation, it becomes possible to sequentially stack a plurality of wafers.

The reading of the alignment recognition mark is not limited to infrared rays, and other means may be used. For example, it is possible to use X-rays or visible light.

The actuator 7 for performing the position adjusting operation through the walking operation is constructed as shown in FIGS. 3 and 4, for example. As shown in FIG. 3, three movable support means 31 are provided in the circumferential direction of the holding means 5 as a disk-shaped movable table, that is, three in total. Each movable supporting means 31 has a pair of two piezoelectric driving members 32, 3
3 is provided. The piezo drivers 32 and 33 are shown in FIG.
As shown in FIG. 6, support blocks 32d and 33d provided on the movable table 5 so as to be able to contact / separate from each other, and connected to the support blocks 32d and 33d and extend substantially horizontally (X and Y directions). First piezoelectric element 32a, 33a and second piezoelectric element 32b, 33
b, and third piezo elements 32c and 33c connected to the support blocks 32d and 33d and extending substantially in the vertical direction (extending in the Z direction).

By controlling the expansion / contraction operation amounts of the first piezo elements 32a, 33a and the second piezo elements 32b, 33b, the support blocks 32d connected to them are controlled.
The 33d can be arbitrarily moved in any direction in the surface direction of the movable table 5, that is, in the substantially horizontal direction, as indicated by the arrow in FIG. Therefore, the support block 32
When either d or 33d is in contact with the lower surface of the movable table 5 and the supporting block in contact therewith is moved, the movable table 5 can be moved in the moving direction of the supporting block accordingly. At this time, the third piezo element 32c or 33c is swung along with the movement of the support block, and supports the movable table 5 from below via the support block, and thus the support block. Then, the support blocks 32d, 32d are alternately brought into contact with and separated from the movable table 5, and the support blocks 32d,
By moving 33d and swinging the third piezo elements 32c, 33c, the third piezo elements 32c, 33c of the piezo driver 32, 33 and the support block 3 are formed.
2d and 33d perform a walking motion relative to the movable table 5, that is, a walking motion. Instead of the main walking motion of moving the foot up and down, it is also possible to use a method of feeding by the difference in friction between the actuator and the movable table contact surface at the time of feeding and returning.

Since the movable support means 31 are provided at three locations in the circumferential direction of the disk-shaped movable table 5, a total of three, are provided.
By driving each piezo element of each movable support means 31 in synchronization, the movable table 5 can be arbitrarily moved in the X, Y, and θ directions. Therefore, the position of the movable table (holding means) 5 can be finely adjusted in substantially any direction, and the relative position between the two wafers 2 and 3 can be accurately adjusted within a predetermined accuracy range through the fine adjustment. You can Further, particularly by the expansion / contraction operation of the third piezo elements 32c and 33c, fine adjustment can be performed also in the Z direction, and in the end, it constitutes an alignment means capable of fine adjustment in any direction.

After the relative positions of the two wafers 2 and 3 are adjusted within a predetermined accuracy range by the above alignment process,
For example, a joining process by pressure as shown in FIG. 5 is started. The lower wafer 3 is raised together with the holding means 5 by the elevating means 8, and the bonding surfaces of the upper wafer 2 and the lower wafer 3 are brought into contact with each other. Thereafter, the elastic member 11 having the bellows structure closes the first space 9 between the upper and lower holding means 4 and 5 in a sealed state from the second space 10.

In this embodiment, the elastic member 11 is lowered after the lower wafer 3 and the holding means 5 are raised by the elevating means 8. By doing so, since the elastic member 11 does not touch at the time of contact, the table (holding means 5 for the lower wafer) does not shift, which is advantageous when high alignment accuracy is required. However, for example, if high precision is not required and simplification is required, the elastic member 11 is first brought into contact with the elastic member 11 without being moved up and down, and then the wafers are brought into contact with each other by ascending and pressing to join them. You can also In this embodiment, for example, as shown in FIG. 6, the upper holding means 4 is provided with an elastic member 11 having a bellows structure.
Is held by a cylinder structure so as to be movable up and down, and when the pressure bonding step is started, the elastic member 11 is moved downward by, for example, pneumatically pressurizing the cylinder, and the crimping member 15 provided at the lower end of the elastic member 11 is moved. The lower holding means 5 is surely brought into close contact with the first holding means 5 so that the space between the first space 9 and the second space 10 can be surely sealed.

In this state, as shown in FIG. 5, the gas for pressurization is sent into the second space 10 through the pressurization port 16 to increase the pressure in the second space 10 and A pressure difference is created between the pressure in the first space 9 and the pressure in the second space 10. At this time, if the pressure in the first space 9 has already been reduced before entering the bonding step, it is only necessary to supply, for example, air at atmospheric pressure or lower without supplying pressurized gas. Thus, a pressure difference can be easily created. In this embodiment, the first space 9
A pressure reducing port 17 is provided for the first space 9 to reduce the pressure in the first space 9 to a desired degree of vacuum, for example, a vacuum degree of 130 × 10 ⁻³ Pa or less, and a second pressure via the pressure port 16. The pressure in the space 10 is increased, and the pressure difference between the spaces 9 and 10 is made to be a substantially arbitrary pressure difference.

When the above-described pressure difference is applied, the chamber 6 itself has a structure equivalent to that of a cylinder having the holding means 5 as a piston, and the two wafers 2 which are in contact with each other via the holding means 5. A pressing force corresponding to the above pressure difference is applied between the three joint surfaces. This pressing force depends on the pressure receiving area of the holding means 5 that functions as a piston, and as described above, the actuator 7 is in contact with the peripheral portion of the holding means 5, and it may be separated and free during pressurization. Therefore, it is possible to easily obtain a high pressing force according to the bonded surface of the wafer. Due to this pressing force, both wafers 2,
3 is surely pressure-bonded to a desired state.

Even for an object to be waved easily such as a thin wafer, by applying a high pressure, the waved state is corrected and a desired bonding state is obtained. Further, since the joining surfaces of the objects to be joined are forcibly pressed against each other, it is possible to eliminate the need for adjusting the parallelism between the two during the pressure joining. That is, due to the pressurization, the parallelism between the two naturally matches.

As shown in FIG. 7, both wafers 2,
Even if the joint surface of No. 3 has a non-smooth portion and a minute gap 18 is formed between the two in a state where they are only in contact with each other, by applying the high pressing force as described above,
Both bonding surfaces are brought into close contact with each other over substantially the entire surface, and pressure bonding can be performed in a desired state.

Further, at this time, if the inside of the first space 9 is kept at a vacuum degree of a predetermined value or less, the minute gap 18 as described above is obtained.
Since the void is not substantially generated even if the squeezing is performed, the generation of the void can be prevented at the same time.

Further, as described above, since the alignment step and the pressure bonding step can be successively performed within one chamber 6, both the operation and the apparatus are greatly simplified as compared with the case where each step is separately performed. It is possible to reduce the size of the entire device and reduce the cost.

Although the alignment process has been described in the above embodiment, in the present invention, it is possible to provide a cleaning process for the bonding surface of the objects to be bonded before the alignment process, and this cleaning process is also possible. It is also possible to carry out in the same chamber 6. The cleaning can be performed by irradiation with energy waves or energy particles.

For example, as shown in FIG. 8, in order to perform a cleaning process before the alignment process, energy waves or side waves are laterally directed toward the chamber 6 into the gap 41 formed between the two wafers 2 and 3 facing each other. It is possible to adopt a structure in which one irradiation means 42 is provided for irradiating energetic particles to substantially simultaneously clean the bonding surfaces of both wafers 2 and 3. In the mode shown in FIG. 8, the irradiation means 42 is composed of means for irradiating the ion beam 43, but it may be composed of means for irradiating plasma or the like. The degree of vacuum in the chamber 6 is
The pressure is preferably 130 × 10 ⁻³ Pa or less, and irradiation is performed in that state. Alternatively, the irradiation is further performed in an atmosphere of an inert gas such as argon gas.

In the embodiment shown in FIG. 8, the chamber 6 is further added.
Facing surface 4 of the irradiation port 42a of the irradiation means 42 in
4 is inclined in such a direction as to prevent reflection of the ion beam 43 as an irradiation energy wave or energy particles toward the gap 41. Further, a suction means 45 such as a vacuum pump is connected to the inclined facing surface portion 44, so that impurities generated from the wall surface due to the reflection or etching by irradiation of the ion beam 43 are reflected in the gap 41 direction, Flying can be more reliably prevented, and adhesion of these impurities to the joint surface can be prevented. The suction means 45 adjusts the degree of vacuum in the chamber 6 to 130 × 10 ^−3.
It is also possible to serve as a vacuum suction means for controlling the pressure to Pa or less.

By providing a cleaning means by irradiation of energy waves or energy particles in this way, it becomes possible to perform all the steps from cleaning, alignment, and pressure bonding in one chamber 6, and the mounting process. Overall efficiency is further enhanced.

[0043]

As described above, according to the mounting method and apparatus of the present invention, at least alignment and pressure bonding can be efficiently performed in one chamber, and the entire mounting process can be performed. In addition to simplification, the mounting apparatus as a whole can be downsized and the cost can be reduced.

Further, since the pressurizing force is generated by the pressure difference between the first and second spaces in the chamber, the chamber itself can function as a pressurizing cylinder, and a large pressure receiving area can be secured to easily apply a high pressurizing force. The pressure can be obtained.

Further, if the alignment actuator is constructed as a means for supporting the lower side holding means from below in the peripheral portion thereof, a structure having a large central portion can be achieved and the alignment mark can be read over a wide area. Therefore, the alignment can be facilitated.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a mounting apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram showing an example of mounting on a laminated wafer in the mounting apparatus of FIG.

3 is a perspective view showing an example of an actuator in the apparatus of FIG.

FIG. 4 is an enlarged partial perspective view of the actuator of FIG.

5 is a schematic configuration diagram showing a pressure bonding step in the apparatus of FIG.

6 is an enlarged partial sectional view of the device of FIG.

FIG. 7 is a schematic cross-sectional view showing a state in which wafers whose surfaces are not smooth are joined to each other.

FIG. 8 is a schematic configuration diagram when a cleaning unit is added to the apparatus of FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Mounting device 2 Upper wafer 3 as one to-be-joined object 3 Lower wafer as another to-be-joined object 4 Upper wafer holding means 5 Lower wafer holding means 6 Chamber 7 Actuator 8 Elevating means 9 First space 10 Second Space 11 elastic members 12, 14 recognition means 13 infrared light source 15 crimping member 16 pressurizing port 17 depressurizing port 18 minute gap 21 laminated wafer 22 wafer 31 movable supporting means 32, 33 piezo driver 32a, 33a first piezo element 32b , 33b Second piezo elements 32c, 33c Third piezo elements 32d, 33d Support block 41 Gap 42 Irradiation means 42a Irradiation port 43 Ion beam as energy wave or energy particle 44 Opposite surface 45 of irradiation port Suction means

Claims (17)

[Claims] 1. A mounting method for joining facing objects to be joined together, which is a space between the objects to be joined in the chamber after aligning relative positions of the objects to be joined in one chamber. 2. The mounting method characterized in that the objects to be joined are pressure-bonded to each other by an atmospheric pressure difference between the above space and a second space which is another space. 2. The objects to be joined are arranged to face each other in a depressurized chamber, the relative positions of the objects to be joined are aligned, and then the first space is made elastic with respect to the second space. The mounting method according to claim 1, wherein the sealing is performed, the atmospheric pressure in the second space is increased to cause a pressure difference with respect to the first space, and the objects to be bonded are pressure-bonded to each other by the pressure difference. 3. In the alignment, a holding means for holding an object to be joined on the lower side is supported by abutting an actuator from the lower side, and the position of the holding means is adjusted by the operation of the actuator, and the adjustment is performed through the adjustment. The mounting method according to claim 1, wherein the relative positions of the objects to be joined are aligned. 4. In the alignment, infrared rays are radiated from one side, reflected light from the alignment marks attached to both objects to be bonded or their holding means is detected by a recognition means, and the alignment mark of the alignment mark is detected through the detection. The mounting method according to claim 1, wherein the position is read. 5. The alignment according to claim 1, wherein at the time of the alignment, infrared rays are radiated from one side, and the positions of the alignment marks attached to both the objects to be joined or their holding means are read by the transmitted infrared rays. How to implement. 6. The mounting method according to claim 1, wherein at least one of the opposed objects to be bonded is a wafer. 7. The mounting method according to claim 1, wherein at least one of the objects to be joined facing each other is a laminated wafer. 8. The degree of vacuum in the chamber is set to 130 × 10.
^{The method according to} any one of claims 1 to 7, wherein at least one joint surface of the objects to be joined is cleaned by irradiation with energy waves or energy particles in a state of ^-3 Pa or less, and the alignment and pressure bonding are performed after the cleaning. Implementation method described. 9. The mounting method according to claim 1, wherein heating is also used when joining the objects to be joined. 10. A mounting apparatus for joining opposing objects to be joined, comprising an alignment means for aligning relative positions of the objects to be joined to one chamber, and a space between the objects to be joined in the chamber. 1. A mounting apparatus, comprising: a pressure bonding means for bonding an object to be bonded to each other by a pressure difference between the first space and a second space, which is the other space, and the pressure difference. 11. A depressurizing unit for depressurizing the inside of the chamber to a predetermined degree of vacuum, wherein the pressure joining unit separates the first space from the second space after the alignment by the alignment unit.
11. The mounting device according to claim 10, further comprising an elastic member that seals against the space. 12. The alignment means according to claim 10 or 11, wherein the alignment means has an actuator which is brought into contact with a holding means for holding a lower object to be joined from the lower side and which is movable to adjust the position of the holding means. Mounting device. 13. The alignment means irradiates infrared rays from one side, detects reflected light from the alignment marks attached to both objects to be bonded or their holding means, and detects the position of the alignment mark through the detection. The mounting device according to claim 10, further comprising a readable recognition unit. 14. The alignment means includes means for irradiating infrared rays from one side and recognition means for reading the positions of the alignment marks attached to both objects to be joined or their holding means by means of transmitted infrared rays. Item 10
13. The mounting device according to any one of 1 to 12. 15. The mounting apparatus according to claim 10, wherein at least one of the objects to be joined facing each other is a wafer. 16. The mounting apparatus according to claim 10, wherein at least one of the objects to be joined facing each other is a laminated wafer. 17. The degree of vacuum in the chamber is set to 130 × 1.
17. A pressure reducing means for reducing the pressure to 0 ^-3 Pa or less, and an irradiation means for irradiating an energy wave or energy particles on the bonding surface of at least one object to be bonded before the alignment by the alignment means. Mounting device described in.