JP2003318219A - Method and device for mounting - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mounting method which enables a junction surface to be washed effectively and uniformly by energetic wave or energetic particle, and avoids a problem of sticking of impurities due to opposed chamber wall surface etching also in washing in an inside of a chamber, and to provide a device thereof. <P>SOLUTION: In the mounting method and the device thereof, energetic wave or energetic particle is emitted into a clearance formed between opposed junction matters, by one irradiation means for practically washing a junction surface of both the junction matters simultaneously while preventing reflection of impurities from a chamber wall surface, and at least one junction matter is rotated in washing. After a relative position between the washed junction matters is aligned, the junction matters are jointed mutually. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting method and apparatus for bonding objects to be bonded, such as chips and wafers, and in particular, the bonding surface is cleaned and activated by energy waves or energy particles for efficient bonding. The present invention relates to a mounting method and device.

[0002]

2. Description of the Related Art Mounting of an article to be joined having a solder joint, etc., for example, forming a solder bump on a chip, bringing the chip close to a substrate in a face-down manner, and abutting the solder bump on a pad of the substrate, A method of mounting a chip in which bumps of the chip are melted by heating and bonded to pads of a substrate is well known. A mounting method is also known in which wafers having exposed electrodes are bonded to each other.
In such joining of the objects to be joined, there is a possibility that the metal joint or the like may be exposed to the atmosphere or the like to be primary-oxidized or have impurities attached before the joining step,
If the oxide film is formed on the joint surface or impurities such as organic substances and foreign substances are attached to the joint surface as described above, the target joint state may not be obtained. In order to deal with these problems, in the conventional mounting under atmospheric pressure, joining at a considerably high temperature was necessary.

On the other hand, a method is being known in which the surfaces of metal joints are cleaned and activated by energy waves or energy particles to join them at room temperature or a temperature close thereto. For example, Japanese Patent No. 2791429 discloses that the bonding surfaces of both silicon wafers are sputter-etched by irradiating an inert gas ion beam or an inert gas fast atom beam in a vacuum at room temperature prior to bonding, at room temperature between silicon wafers. A joining method is disclosed. In this room temperature bonding method, oxides and organic substances on the bonding surface of the silicon wafer are blown by the beam to form a surface of activated silicon atoms, and the surfaces are
It is joined by the high bond strength between the atoms. Therefore,
In this method, for example, heating for joining can be made unnecessary, and joining at room temperature becomes possible.

As described above, the method of etching and cleaning the joint surface with energy waves or energy particles is an effective method that can make the joint surface clean before joining and can simplify the joining operation. is there.

[0005]

However, in the method disclosed in the above-mentioned Japanese Patent No. 2791429,
Since two beam irradiation devices were used to etch and clean the upper and lower wafers respectively,
There remains a problem that the apparatus for beam irradiation becomes large and complicated. In addition, each beam irradiation device is tilted so that the bonding surface of each wafer is etched and cleaned by the beam irradiated from the irradiation port. However, the irradiation angle of the irradiation beam and the irradiation port from the irradiation port depend on the position on the bonding surface. Since the structure changes the distance, there remains a problem that it is difficult to uniformly clean the joint surface. Furthermore, etching by beam irradiation in the vacuum chamber,
Although cleaning is performed, there is also a problem that the opposite surface of the chamber is also etched by the beam emitted from the irradiation port, and the fine particles of the wall surface forming material generated by the etching may be reflected and adhered to the wafer as impurities. ing.

Therefore, an object of the present invention is to focus on the effectiveness of cleaning the bonding surface of the object to be bonded by energy waves or energy particles, and at the same time to address the above problems in the conventional method. (EN) A mounting method and apparatus capable of efficiently and uniformly cleaning a joint surface, and avoiding the problem of impurity adhesion due to etching of a wall surface of a facing chamber even when cleaning in a chamber. .

[0007]

In order to solve the above problems, in the mounting method and apparatus according to the present invention, first, the bonding surface can be cleaned efficiently and uniformly by energy waves or energy particles. In addition, by irradiating an energy wave or energy particles into the gap formed between the objects to be bonded so that the bonding surfaces of the objects to be bonded can be efficiently cleaned substantially simultaneously, and the bonding surface is irradiated. At least one to-be-joined object is rotated during cleaning so that it is uniformly cleaned by energy waves or energy particles. That is, the mounting method according to the present invention substantially irradiates the bonding surface of both objects to be bonded by irradiating an energy wave or energy particles by a single irradiation means into the gap formed between the objects to be opposed to each other. The cleaning apparatus is characterized by simultaneously cleaning and rotating at least one object to be bonded during cleaning. The mounting apparatus according to the present invention has an energy wave or energy in a gap formed between the opposed objects to be bonded. It is characterized in that it has an irradiation means for irradiating particles to substantially simultaneously wash the joint surfaces of both objects to be joined, and a rotating means for rotating at least one of the objects to be joined during washing.

Further, in the mounting method and apparatus according to the present invention, during cleaning in the chamber, impurities are prevented from adhering to the bonding surface due to etching of the chamber wall surface facing the irradiation opening of energy waves or energy particles. The chamber facing surface is tilted so that it does not reflect to the bonding surface side, and further suction is preferably applied.

That is, in the mounting method according to the present invention, the energy wave or the energy particle is irradiated by one irradiation means into the gap formed between the opposed objects to be bonded to bond the surfaces to be bonded to each other. The method comprises substantially simultaneous cleaning, rotating at least one of the objects to be bonded during cleaning, aligning the relative positions of the cleaned objects to be bonded, and then bonding the objects to be bonded. .

In the present invention, the article to be bonded includes all things to be mounted, and typical examples thereof include a chip, a wafer, a substrate and the like. These include, for example, IC chips, semiconductor chips, optical elements, surface mount components, various wafers, resin substrates, glass substrates, film substrates, etc., which are to be joined to the other article to be joined regardless of type or size. All of the above are included. Objects to be bonded of the same type may be bonded to each other, or objects to be bonded of different types may be bonded to each other.

In the above method, the bonding surfaces of both the objects to be bonded can be cleaned substantially simultaneously in the vacuum chamber. In the air, a flow region of the energy wave or energy particles may be locally formed only between the both objects to be bonded, and thereby substantially simultaneous cleaning may be performed.

Further, the mounting method according to the present invention irradiates an energy wave or energy particles from one side by means of one irradiating means in a gap formed between two opposing objects to be bonded in a vacuum chamber. The bonding surfaces of both objects to be bonded are cleaned substantially at the same time, and the irradiation energy wave, energetic particles, the cleaning material from the objects to be bonded or the separated material from the surfaces to be bonded in the chamber facing the irradiation opening of the irradiation means Is reflected in the gap direction, and after the relative positions of the cleaned objects to be bonded are aligned, the objects to be bonded are bonded to each other.

In this method, the irradiation energy wave, energetic particles, the cleaning material from the object to be bonded or the separated material from the facing surface in the chamber is prevented from being reflected in the gap direction, and the facing surface part is provided. Can be aspirated at. That is, suction is added in order to make the reflection prevention more reliable.

The degree of vacuum in the chamber is preferably 130 × 10 ^-3 Pa or less.

Further, in this method as well, it is preferable to rotate at least one of the objects to be bonded while the bonding surfaces of the objects to be bonded are being cleaned substantially at the same time, which enables more uniform cleaning. Becomes

As the energy wave or energetic particles for simultaneous cleaning before bonding, any one of plasma (including atmospheric pressure plasma), ion beam, atomic beam, radical beam and laser can be used. It is preferable to use plasma (including atmospheric pressure plasma) and an ion beam because they are easy and spread in a wide angle. For example, the cleaning method is based on the plasma generated between the parallel plate electrodes, and the cleaning gas may be made to flow from one side between the objects to be bonded and suctioned from the opposite direction. Also, when joining objects to be joined,
Heating can also be used together.

In such a mounting method according to the present invention, the cleaning process, the alignment process, and the bonding process using the above-mentioned energy waves or energy particles can be performed in one chamber. By enabling it to be carried out in one chamber, it is possible to simplify the process and reduce the size and simplification of the entire apparatus. Further, by performing the bonding in a vacuum, it is possible to prevent air from being entrapped in the bonding interface to form a void.

Further, the above-described technique of flowing gas from one side between the objects to be welded and aspirating from the opposite direction at the time of cleaning is not limited to simultaneous cleaning and cleaning on the assumption that the objects to be welded are rotated during the cleaning process. It can be applied to any mounting technology on the premise that the cleaning surface of the object to be bonded is previously cleaned with energy waves or energy particles. That is, the present invention is
In a mounting method that includes a step of irradiating energy waves or energy particles to both facing objects to be cleaned to clean the bonding surfaces of both objects to be bonded, a gas is flowed from one of the objects to be bonded during cleaning and sucked from the opposite direction. Also provided is an implementation method characterized by: When the joint surface of the object to be joined is washed by irradiating with energy waves or energy particles, the dirt removed by the washing and removed from the joint surface may adhere to the joint surface again. By supplying gas from one direction and suctioning from the opposite direction, the flow of the cleaning gas or reaction gas is sucked from the opposite direction as a one-way flow, effectively preventing redeposition of dirt and enhancing the cleaning effect. To be

In the mounting method in which the gas flow and suction are performed as described above, plasma can be used as the energy waves or energy particles. When the energy wave or energy particles are argon plasma, argon gas is used as the gas.

When the energy wave or energy particles are plasma, a plasma generating electrode is provided in each of the means for holding the objects to be joined, and plasma is generated between the electrodes to join the surfaces to be joined to the objects to be joined. It is also possible to wash the joint surface of both objects to be joined by switching the irradiation direction of plasma generated by switching the polarities of both electrodes.

In the mounting apparatus according to the present invention, irradiation is performed by irradiating energy waves or energy particles into the gap formed between the opposed objects to be bonded, thereby substantially simultaneously cleaning the bonding surfaces of the objects to be bonded. Means, rotating means for rotating at least one of the objects to be joined during cleaning, alignment means for aligning the relative positions of the cleaned objects to be joined, and joining means for joining the objects to be joined after alignment. It is characterized by having.

In this mounting apparatus, the irradiation means can be constituted by means for substantially simultaneously cleaning the joint surfaces of the two objects to be joined in the vacuum chamber.

Further, in the mounting apparatus according to the present invention, the energy wave or the energy particle is irradiated from the side into the gap formed between the opposing objects to be joined in the vacuum chamber. An irradiation means for cleaning the bonding surfaces substantially simultaneously, an alignment means for matching the relative positions of the cleaned objects to be bonded, and a bonding means for bonding the objects to be bonded after positioning, In the chamber, the facing surface is oriented in a direction that prevents reflection of irradiation energy waves, energetic particles, cleaning substances from the object to be bonded or separated substances from the facing surface in the gap direction on the facing surface of the irradiation port of the irradiation means. It is characterized by being inclined.

In this mounting apparatus, it is preferable to adopt a structure in which the facing surface of the chamber is inclined and the suction means is connected to the facing surface portion. Due to the inclination of the facing surface, it is possible to prevent reflection of impurities etched by irradiation energy waves or energy particles in the facing surface toward the bonding surface of the object to be bonded, and more reliably prevent this by suction.

Also in this mounting apparatus, it is preferable that the degree of vacuum in the chamber is set to 130 × 10 ⁻³ Pa or less.

Further, in order to achieve more uniform cleaning,
Rotating means for rotating at least one of the objects to be bonded can be provided during the simultaneous cleaning of the objects to be bonded.

As the energy wave or energy particle to be irradiated, the same ones as described above can be used, and plasma or ion beam is particularly preferable. When plasma is used, for example, a configuration in which at least one holding means is an electrostatic chuck and a plasma electrode can also be adopted. Further, plasma is generated between the opposed objects to be bonded using the opposed object holding parts as plasma electrodes. Even in this case, in order to prevent the cleaned impurities from adhering to the object to be joined again, a small amount of cleaning gas (for example, Ar gas) is flown in between and suction is carried out from the opposite direction to reattach the impurities. It is preferable to prevent it.

Also in such a mounting apparatus according to the present invention, cleaning with energy waves or energy particles,
Alignment and bonding can be performed in one chamber,
The irradiation means, the alignment means, and the joining means can be provided.

Further, according to the present invention, in a mounting apparatus having means for irradiating both opposing objects to be joined with an energy wave or energetic particles to clean the joint surfaces of both objects to be joined, a gas is attached to the objects to be joined at the time of cleaning. There is also provided a mounting apparatus characterized by having a gas supply unit that supplies gas from one side and a gas suction unit that sucks gas from the opposite direction.

Also in this mounting apparatus, plasma can be used as the energy wave or the energy particle. When the energy wave or energy particles are argon plasma, argon gas is used as the gas.

When the energy wave or energy particles are plasma, the means for holding both objects to be joined are provided with electrodes for plasma generation, respectively.
Further, it is possible to adopt a configuration having a polarity switching means for switching the irradiation direction of plasma generated by switching the polarities of both electrodes.

[0032]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a mounting apparatus 1 according to an embodiment of the present invention. FIG. 1 illustrates a case where upper wafer 2 and lower wafer 3 are bonded to each other as objects to be bonded. Upper wafer 2
Are held by the holding means 4, and the lower wafer 3 is held by the holding means 5. In this embodiment, the bonding surfaces of the two wafers 2 and 3 are opposed to each other and are arranged and held in the chamber 6. The chamber 6 is configured as, for example, a vacuum chamber capable of reducing the degree of vacuum in the chamber 6 to 130 × 10 ⁻³ Pa or less.

In the chamber 6, the objects to be joined 2 facing each other,
In the gap 7 formed between the three, one irradiation means 8 is provided to irradiate energy waves or energy particles from the side to wash the joint surfaces of the objects to be joined 2, 3 substantially simultaneously. In the present embodiment, the irradiation means 8 comprises means for irradiating the ion beam 9. Ion beam 9
As described above, the vacuum degree in the chamber 6 is set to 130 × 10
Irradiation is performed in a state of ^-3 Pa or less. Alternatively, the irradiation is further performed in an atmosphere of an inert gas such as argon gas.

The holding means 5 for the lower wafer 3 is formed in a disk shape in this embodiment, and the holding means 5 can be rotated by the rotating means 10 together with the lower wafer 3 during the cleaning by the ion beam 9. Has become. By cleaning while rotating, it is possible to uniformly clean the entire joint surface. The form of the rotating means 10 is not particularly limited, and is constituted by, for example, a walking table structure capable of performing a rotating operation via a walking operation as described later. In this embodiment, only the holding means 5 of the lower wafer 3 can be rotated, but an appropriate rotating means is also provided for the upper wafer 2 so that the upper wafer 2 can be rotated as indicated by the two-dot chain line arrow in FIG. 2 can also be rotated. Further, the holding means 5 is
By the elevating means 11, it can be moved in the vertical direction.

In the chamber 6, the facing surface 12 of the irradiation port 8a of the irradiation means 8 is inclined in a direction to prevent the reflection of the ion beam 9 as an irradiation energy wave or energy particles in the direction of the gap 7. In the present embodiment, a suction means 13 such as a vacuum pump is further connected to the inclined facing surface 12 portion, and the direction of the gap 7 of the impurities generated from the wall surface by the etching by the reflection or the irradiation of the ion beam 9 is directed. It is possible to more reliably prevent the reflection and flight of the particles and to prevent these impurities from adhering to the bonding surface. The suction means 13 can also serve as a vacuum suction means for setting the degree of vacuum in the chamber 6 to 130 × 10 ⁻³ Pa or less.

When it is difficult to substantially simultaneously wash the facing joint surfaces of the objects to be joined 2 and 3 in the form shown in FIG. 1 by one irradiation means, for example, in FIG. As shown in another embodiment, the irradiation means 21 is swung to sequentially incline the direction of the irradiation port so as to face the respective joint surfaces,
You may make it wash | clean the joining surface of both to-be-joined objects 2 and 3 one by one. In the present invention, such a form is also included in the substantially simultaneous cleaning. Further, as shown by arrows in FIG. 2, it is possible to tilt each holding means 4 and 5 together with the wafers 2 and 3 during the cleaning so that the bonding surface to be cleaned faces the irradiation means 21 more. In addition, these forms can be arbitrarily combined.

The rotating means 10 for performing the rotating operation through the walking operation is constructed as shown in FIGS. 3 and 4, for example. As shown in FIG. 3, the movable supporting means 31 is
3 in the circumferential direction of the holding means 5 as a disk-shaped movable table.
There are three places in total. Each movable supporting means 31 is provided with a pair of two piezoelectric driving bodies 32 and 33. As shown in FIG. 4, the piezo drive bodies 32 and 33 include support blocks 32d and 33d provided on the movable table 5 so as to be in contact with and away from the movable table 5, and the support blocks 32d and 33d.
The first piezo element 32 connected to 33d and extending substantially in the horizontal direction so as to intersect with each other (extends in the X and Y directions).
a, 33a and the second piezo elements 32b, 33b,
A third piezo element 32 that is connected to the support blocks 32d and 33d and extends substantially vertically (extends in the Z direction).
c, 33c.

By controlling the expansion / contraction operation amounts of the first piezo elements 32a, 33a and the second piezo elements 32b, 33b, the support blocks 32d connected to them are controlled.
The 33d can be arbitrarily moved in any direction in the surface direction of the movable table 5, that is, in the substantially horizontal direction, as indicated by the arrow in FIG. Therefore, the support block 32
When either d or 33d is in contact with the lower surface of the movable table 5 and the supporting block in contact therewith is moved, the movable table 5 can be moved in the moving direction of the supporting block accordingly. At this time, the third piezo element 32c or 33c is swung along with the movement of the support block, and supports the movable table 5 from below via the support block, and thus the support block. Then, the support blocks 32d, 32d are alternately brought into contact with and separated from the movable table 5, and the support blocks 32d,
By moving 33d and swinging the third piezo elements 32c, 33c, the third piezo elements 32c, 33c of the piezo driver 32, 33 and the support block 3 are formed.
2d and 33d perform a walking motion relative to the movable table 5, that is, a walking motion.

Since the movable support means 31 are provided at three locations in the circumferential direction of the disk-shaped movable table 5, a total of three, are provided.
By driving each piezo element of each movable support means 31 in synchronization, the movable table 5 can be arbitrarily moved in the X, Y, and θ directions. Since this walking operation can be performed in an unlimited direction in the rotation direction θ, it is possible to continuously rotate during cleaning.
Further, particularly by the expansion / contraction operation of the third piezo elements 32c, 33c, fine adjustment can be performed also in the Z direction, and in the end
It is possible to move in any of the X, Y, and θ directions,
Moreover, since fine adjustment is possible also in the Z direction, this walking table mechanism also serves as an alignment means for performing the alignment described later. By cleaning the wafer 3 while rotating the wafer 3 by the rotating means 10, uniform cleaning can be performed as described above. Instead of this walking motion of moving the foot up and down, it is also possible to use a method of feeding by the difference in friction between the actuator and the table contact surface at the time of feeding and returning.

The cleaned wafers 2 and 3 are subjected to an alignment step of aligning their relative positions within a predetermined positional accuracy, as shown in FIG. In the alignment step, in the present embodiment, first, the lower wafer 3 is raised together with the holding means 5 by the elevating means 11,
The upper wafer 2 is approached with a minute gap. In this state, the relative positions of the two wafers 2 and 3 are adjusted within a predetermined accuracy range. For alignment, the recognition marks for alignment provided on both wafers 2 and 3 or / and their holding means 4 and 5 are read, and the relative positional relationship between them is detected. In this embodiment,
Infrared camera 41 with infrared light source located below
Thereby, each recognition mark is detected by the infrared rays which are transmitted through the lower holding means 5 and are reflected from both the wafers 2 and 3. When the reflection is difficult, the infrared light source 42 is arranged above as shown by the two-dot chain line in FIG.
Both wafers 2 and 3 may be transmitted, and each recognition mark may be detected by the infrared camera 43 via transmitted infrared light.

The reading of the alignment recognition mark is not limited to infrared rays, and other means may be used. For example, it is possible to use X-rays or visible light.

Reference numeral 44 in FIG. 5 denotes an annular or tubular bellows, which is provided on the upper holding means 4 side in this embodiment for the next pressure joining step. In the alignment process shown in FIG.
A gap is opened between the lower end of the and the lower holding means 5.

After the relative positions of the two wafers 2 and 3 are adjusted within a predetermined accuracy range by the above alignment process,
For example, as shown in FIG. 6, a joining process by pressure is started. The lower wafer 3 is held by the lifting means 11 to hold it.
Along with this, the bonding surfaces of the upper wafer 2 and the lower wafer 3 are brought into contact with each other. At the same time, the bellows 44 closes the space 45 between the upper and lower holding means 4 and 5 in a sealed state. At this time, the space 45 between the holding means 4 and 5
And the other inner space 46 of the chamber 6 have a predetermined vacuum state (for example, the above-mentioned vacuum degree of 130 × 10 ⁻³ P
a or less). By doing so, since the bellows 44 does not touch at the time of contact, the table (lower wafer holding means 5) does not shift, which is advantageous when high alignment accuracy is required. However, for example, if high precision is not required and simplification is desired, the bellows 44 may be first brought into contact with the bellows 44 without moving up and down, and then the wafers may be brought into contact with each other and joined by further raising and pressing. .

In this state, air or a predetermined gas is supplied from the pressure port 47 provided in the chamber 6,
The pressure in the space 46 is increased. Due to the pressure difference in the spaces 45 and 46, a predetermined pressing force is applied between the bonding surfaces of the wafers 2 and 3 that are in contact with each other, and the two are pressure bonded. Since the rotating means 10 is in contact with the peripheral portion of the holding means 5 and can be separated and free when pressure is applied, a high pressing force can be easily obtained in accordance with the wafer bonding surface. .

In this bonding, both bonding surfaces are cleaned by the above-mentioned simultaneous cleaning by irradiation with energy waves or energetic particles, and the surfaces are kept in an activated state, so that they are substantially strong even without heating. It becomes possible to obtain a bonded state. In addition, since the bonding surface cleaning and activation are performed while rotating at least one of the wafers and the uniform processing is performed, the above excellent bonding state is achieved over the entire predetermined bonding area. Also, both joint surfaces are kept clean by washing,
In addition, since the inclination of the facing surface 12 of the irradiation port 8a of the chamber 6 prevents the reflection of impurities generated by etching to the joint, it is also possible to prevent impurities from being mixed into the joint, which is excellent without impurities. A bonded state is obtained. Moreover, since the bonding is performed in a vacuum state in the space 45, the possibility that voids or the like will be generated or left at the bonded portion is substantially eliminated. By providing a heating means on at least one of the upper wafer holding part and the lower wafer holding part, bonding can be performed under low temperature heating at room temperature to about 200 ° C. and the bonding conditions can be further improved. As a heating means, a heater may be provided in the holding portion or far infrared light may be emitted.

Further, since the pressing operation is applied during the joining, even if there is a non-smooth portion on the joining surface, the joining surfaces can be surely brought into close contact with each other over a predetermined area by applying an appropriate pressure. Thus, a desired good joining state can be obtained. Particularly in the case of a wafer to be treated, when thin films are laminated or high temperature heat treatment is performed, the wafer surface may become non-smooth. The pressure will provide the desired good bond.

After the joining is completed, the space 4 in the chamber 6
The internal pressures at 5 and 46 may be returned to atmospheric pressure, and the bonded article may be taken out from the chamber 6.

The series of mounting steps, particularly cleaning, alignment and pressure bonding steps can be carried out in one chamber, whereby the mounting apparatus as a whole can be made compact and inexpensive. It will be possible.

If the above-mentioned mounting apparatus is illustrated more concretely, it can be configured as shown in FIGS. 7 to 9, for example, and a series of mounting steps can be performed in one chamber.
In FIG. 7, first, in FIG.
Is set on the lower holding means 5, and the upper wafer 2 is set on the upper holding means 4 provided on the lid 6 a of the chamber 6. In FIG. 7B, the lid 6a is closed, the opposed wafers 2 and 3 are adjusted to have a predetermined gap, and the inside of the chamber 6 is set to have a predetermined vacuum degree. Figure 7
In (c), energy waves or energetic particles such as an ion beam and plasma are irradiated from the irradiation port 8a of the irradiation means 8 to simultaneously clean the bonding surfaces of both wafers 2 and 3. At this time, as shown in FIG. 1, it is preferable that the facing surface 12 is formed so as to be inclined to prevent reflection from the wall surface toward the joint surface, and more preferably, the suction means 13 is used.
Also set up.

After cleaning the bonding surface with energy waves or energy particles, as shown in FIG. 7 (d), the lower wafer 3 is raised and brought close to the upper wafer 2, and both wafers are used by using an infrared camera 41 or the like. A few alignment marks are read and the relative positions of the two are adjusted within a predetermined accuracy range. At this time, as shown in FIG. 8 or as shown in FIG. 5, the bellows 44 is attached to the lower holding means 5.
Leave a gap without touching.

After the alignment, as shown in FIG. 7E, the elevating means 11 is raised to bring the lower wafer 3 into contact with the upper wafer 2. At this time, as shown in FIG. 9 or as shown in FIG. 6, the bellows 44 is brought into contact with the lower holding means 5, and the space of the joint portion is the other chamber 6
Sealed from the inner space. In this state, a predetermined pressure is applied to the space inside the chamber 6, and as shown in FIG.
Due to the pressure difference at 46, a pressing force is applied between both bonding surfaces, and both wafers 2 and 3 are pressure bonded.

After the pressure bonding, as shown in FIG. 7 (f), the entire inside of the chamber 6 is returned to the atmospheric pressure, the lid 6a is opened, and the bonded wafer is taken out. Then, Figure 7
Returning to the initial state shown in (a), a series of steps is repeated. In the example shown in FIGS. 7A to 7F, the semi-automatic mode in which each wafer is set and taken out manually is used, but if a wafer handling robot is added,
It can be a fully automatic device. In this way, a series of mounting steps can be performed in one chamber 6,
Not to mention simplification of a series of operations, downsizing of the entire device,
It is possible to reduce costs.

Further, the above-described technique of flowing gas from one side between the objects to be welded during cleaning and sucking from the opposite direction is not limited to simultaneous cleaning and cleaning on the premise of rotation of the objects to be welded, It can be applied to any mounting technology on the assumption that the cleaning surface of the objects to be bonded is cleaned with energy waves or energy particles before bonding. For example, in FIG.
As shown in a mounting apparatus 51 according to yet another embodiment, before cleaning the objects to be bonded 53, 54 in the chamber 52 with an energy wave or energy particles such as plasma, a gas (cleaning gas) is used. (Gas or reaction gas) is supplied between the objects to be bonded from one side by the gas supply means 55 to flow in one direction,
Gas suction means 56 from the opposite side (eg, vacuum pump)
It is possible to adopt a structure that sucks. The dirt on the bonding surfaces of the objects to be bonded 53, 54 blown off by the plasma may adhere to the bonding surfaces again. However, by performing the gas flow in one direction and suction from the opposite direction in this way, the dirt can be re-cleaned. Adhesion will be effectively prevented and more desirable cleaning will be performed.

Further, in the apparatus shown in FIG. 10, holding means 57 and 58 for holding the objects to be joined 53 and 54 are provided with plasma generating electrodes 59 and 60, respectively, and the plasma generating power source 61 to both electrodes 59. , 60 may be applied with a voltage for generating plasma. In this case, by arranging the electrodes 59, 60 so that the polarities of the electrodes 59 and 60 can be switched alternately, the irradiation direction of the generated plasma can be changed. Can be switched between the bonding surfaces of the objects to be bonded 53, 54. By such switching, it becomes possible to surely clean both the joint surfaces of the objects to be joined 53, 54 to a desired state. In the case of this cleaning, in the case of Ar plasma, Ar ⁺ plasma is attracted to the negative electrode as shown in FIG. 10 and hits the surface of the object to be bonded to clean the surface. By electrically switching the negative electrode, it is possible to clean the opposite surfaces.
Further, as described above, it is preferable to carry out in an argon gas atmosphere, and it is preferable to make the flow of the argon gas one-way as described above and suck from the opposite direction.

[0055]

As described above, according to the mounting method and apparatus of the present invention, when cleaning the joint surfaces of both objects to be joined by energy waves or energy particles,
By rotating at least one of the objects to be bonded, uniform cleaning is possible, and a desired excellent bonded state can be obtained over the entire bonded portion.

In addition, by tilting the surface of the chamber facing the irradiation opening of the energy wave or energy particle irradiation means, the impurities generated by etching or the like are prevented from reflecting or flying in the bonding surface direction, so that the bonding portion is not damaged. It is possible to more reliably prevent impurities from being mixed in, and it is possible to obtain an even better joined state.

Further, by adopting the pressure bonding as illustrated, it becomes possible to satisfactorily bond non-smooth objects to be bonded.

Further, a series of mounting steps of cleaning, alignment and bonding can be carried out in one chamber, and it is possible to simplify the whole steps, downsize the entire apparatus and reduce the cost.

Furthermore, the present invention also provides a technique in which the gas supplied during cleaning is unidirectional and suctioned from the opposite direction. As a result, it is possible to more reliably prevent the dirt that has been blown off by cleaning from reattaching to the joint surface.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a mounting apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a mounting apparatus according to another embodiment of the present invention.

FIG. 3 is a perspective view showing an example of rotating means in the apparatus of FIG.

FIG. 4 is an enlarged partial perspective view of the rotating means of FIG.

5 is a schematic configuration diagram showing an alignment step in the apparatus of FIG.

FIG. 6 is a schematic configuration diagram showing a pressure bonding step in the apparatus of FIG.

FIG. 7 is a schematic configuration diagram of a mounting apparatus showing an example when a series of mounting steps is performed in one chamber.

8 is an enlarged vertical cross-sectional view of a portion A in FIG. 7 (d).

9 is an enlarged vertical sectional view of a B part in FIG. 7 (e).

FIG. 10 is a schematic configuration diagram of a mounting apparatus according to still another embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Mounting device 2 Upper wafer 3 as one to-be-joined object Lower wafer 4 as another to-be-joined object Upper wafer holding means 5 Lower wafer holding means 6 Chamber 6a Chamber lid 7 Gap 8, 21 Irradiation means 8a Irradiation Mouth 9 Ion beam as energy wave or energy particle 10 Rotating means 11 Elevating means 12 Opposing surface of irradiation port 13 Suction means 31 Movable supporting means 32, 33 Piezo driver 32a, 33a First piezo element 32b, 33b Second Piezo elements 32c, 33c Third piezo elements 32d, 33d Support blocks 41, 43 Infrared camera 42 Infrared light source 44 Bellows 45 Space at joint portion 46 Other chamber space 47 Pressure port 51 Mounting device 52 Chamber 53, 54 Bonded Object 55 Gas supply means 56 Gas suction means 57, 58 Joined Holding means 59 and 60 for generating plasma electrode 61 for generating plasma power

Claims (30)

[Claims] 1. A gap formed between both facing objects to be joined is irradiated with an energy wave or energy particles by one irradiation means to wash the joining surfaces of both objects to be joined substantially simultaneously. A mounting method comprising rotating at least one of the objects to be joined during cleaning, aligning the relative positions of the cleaned objects to be joined, and then joining the objects to be joined. 2. The mounting method according to claim 1, wherein the bonding surfaces of the two objects to be bonded are substantially simultaneously cleaned in a vacuum chamber. 3. In the vacuum chamber, an energy wave or energy particles are radiated from one side by a single irradiation means into the gap formed between the two objects to be joined which face each other. Simultaneous cleaning is performed, and at the same time, the irradiation energy wave, energetic particles, the cleaning substance from the object to be bonded or the separation of the separated material from the opposed surface in the facing direction of the irradiation port of the irradiation means in the chamber is reflected in the gap direction. A mounting method, characterized in that, after the relative positions of the objects to be joined that have been prevented and cleaned are aligned, the objects to be joined are joined together. 4. The mounting method according to claim 3, wherein irradiation energy waves or energetic particles on the facing surface of the chamber are prevented from being reflected in the gap direction, and suction is performed on the facing surface portion. 5. The degree of vacuum in the chamber is set to 130 × 10.
The mounting method according to claim 2, wherein the mounting pressure is ⁻³ Pa or less. 6. The mounting method according to claim 3, wherein at least one of the objects to be bonded is rotated while the bonding surfaces of the objects to be bonded are substantially simultaneously cleaned. 7. The mounting method according to claim 1, wherein the energy wave or the energy particle is plasma. 8. The mounting method according to claim 7, wherein the cleaning method is performed by plasma generated between the parallel plate electrodes, and cleaning gas is made to flow from one side of the objects to be bonded and suctioned from the opposite direction. 9. The mounting method according to claim 1, wherein the energy wave or the energy particle is an ion beam. 10. The mounting method according to claim 1, wherein heating is used together when the objects to be joined are joined together. 11. The mounting method according to claim 1, wherein the cleaning step using the energy wave or the energy particles, the alignment step, and the bonding step are performed in one chamber. 12. A mounting method having a step of irradiating energy waves or energetic particles to both facing objects to be bonded to clean the bonding surfaces of the objects to be bonded. A mounting method characterized by sucking from the opposite direction to the sink. 13. The mounting method according to claim 12, wherein the energy wave or energy particle is plasma. 14. The mounting method according to claim 12, wherein the gas is an inert gas. 15. A means for holding both objects to be bonded is provided with a plasma generating electrode respectively to generate a plasma between both electrodes to clean the bonding surface of both objects to be bonded and to switch the polarities of both electrodes. 15. The mounting method according to claim 13, wherein the irradiation direction of the plasma generated by the above is switched to clean the bonding surfaces of both objects to be bonded. 16. Irradiation means for irradiating an energy wave or energy particles into a gap formed between both facing objects to be bonded to substantially simultaneously clean the bonding surfaces of both objects to be bonded, and during the cleaning. It has a rotating means for rotating at least one of the objects to be joined, an alignment means for aligning the relative positions of the cleaned objects to be joined, and a joining means for joining the objects to be joined after the alignment. Mounting device. 17. The mounting apparatus according to claim 16, wherein the irradiation means comprises means for substantially simultaneously cleaning the bonding surfaces of the two objects to be bonded in a vacuum chamber. 18. In a vacuum chamber, an energy wave or energy particles are radiated from a side into a gap formed between two opposed objects to be bonded, and the bonding surfaces of the objects to be bonded are substantially simultaneously cleaned. One irradiating means, an alignment means for aligning the relative positions of the cleaned objects to be joined, and a joining means for joining the objects to be joined after alignment,
The facing surface is in a direction that prevents reflection of irradiation energy waves, energetic particles, a cleaning material from the object to be bonded or a separated material from the facing surface in the gap direction on the surface facing the irradiation port of the irradiation means in the chamber. Mounting device characterized by tilting. 19. The mounting apparatus according to claim 18, wherein the facing surface of the chamber is inclined, and suction means is connected to the facing surface portion. 20. The degree of vacuum in the chamber is 130 × 1.
The mounting apparatus according to claim 17, wherein the mounting apparatus has a pressure of 0 ⁻³ Pa or less. 21. The mounting apparatus according to claim 18, further comprising rotating means for rotating at least one of the objects to be bonded during simultaneous cleaning of the objects to be bonded. 22. The mounting device according to claim 16, wherein the energy wave or the energy particle is plasma. 23. The mounting apparatus according to claim 22, wherein at least one holding means is an electrostatic chuck and is a plasma electrode. 24. The mounting apparatus according to claim 22, wherein cleaning is performed by plasma generated between the parallel plate electrodes, and the cleaning gas is supplied from one of the objects to be bonded and sucked from the opposite direction. . 25. The mounting device according to claim 16, wherein the energy wave or the energy particle is an ion beam. 26. The irradiation means, the alignment means, and the bonding means are arranged so that cleaning, alignment, and bonding by the energy wave or energy particles can be performed in one chamber. Mounting device described in. 27. A mounting apparatus having means for irradiating energy waves or energy particles to both facing objects to be bonded to clean a bonding surface of the objects to be bonded, wherein gas is supplied from one of the objects to be bonded at the time of cleaning. A mounting apparatus comprising: a gas supply unit for supplying gas and a gas suction unit for sucking gas from the opposite direction. 28. The mounting apparatus according to claim 27, wherein the energy wave or energy particle is plasma. 29. The mounting device according to claim 27, wherein the gas is an inert gas. 30. A means for holding both objects to be bonded is provided with a plasma generating electrode, and has a polarity switching means for switching the irradiation direction of plasma generated by switching the polarities of both electrodes. Claim 28
Or 29 mounting devices.