JP2015015330A - Semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To alleviate warpage of a substrate, and to improve the productivity of a semiconductor manufacturing device.SOLUTION: A semiconductor manufacturing device comprises: an electrostatic attraction part 27 performing electrostatic attraction of a substrate 15; a substrate holding device 22 having a temperature controller 28 for heating or cooling the substrate 15; a transportation arm 12 transporting the substrate 15, and performing delivery preparation of the substrate 15 to the substrate holding device 22 at a predetermined delivery preparation position; and a substrate delivery mechanism moving at least one of the substrate holding device 22 and the transportation arm 12 when the transportation arm 12 is at the delivery preparation position. An elastic body 16 is attached to the transportation arm 12. Prior to the processing of the substrate 15, heating or cooling at the temperature controller 28 provided in the substrate holding device 22 is started. After the substrate 15 is delivered from the transportation arm 12 to the substrate holding device 22, in a state where the elastic body 16 attached to the transportation arm 12 is pressed against a processed surface of the substrate 15, the electrostatic attraction of the substrate 15 to the substrate holding device 22 is performed.

Description

  The present invention relates to a semiconductor manufacturing apparatus used in a semiconductor manufacturing process involving heating or cooling of a substrate, and more particularly to a semiconductor manufacturing apparatus that performs electrostatic chucking on a substrate to process the substrate.

  A semiconductor manufacturing apparatus includes an apparatus that controls a substrate temperature to a predetermined temperature and performs processing on the substrate. Such an apparatus is provided with heating and cooling means for controlling the substrate temperature. Depending on the device configuration, there are devices that include only heating or cooling means and devices that include both heating and cooling means. As examples of specific semiconductor manufacturing apparatuses, sputtering apparatuses, film forming apparatuses, and ion implantation apparatuses are known.

  When adjusting the temperature of a substrate (for example, a semiconductor wafer such as silicon, silicon carbide, gallium nitride or indium phosphide, a film formed on the front and back surfaces of the wafer, a glass substrate, etc.) to a high or low temperature, The larger the difference between the target set temperature and room temperature, the more the substrate warps. The degree of warpage varies depending on the type and dimensions of the target substrate.

  In many semiconductor manufacturing apparatuses, a substrate is electrostatically adsorbed on a stage by an electrostatic chuck, and processing (processing such as sputtering, film formation, and ion implantation) is performed on the electrostatically adsorbed substrate. Is called. In an apparatus for processing a substrate by setting the substrate temperature to a high temperature or a low temperature, when the substrate is warped, the processing on the surface to be processed of the substrate cannot be performed normally.

  In order to reduce such warpage of the substrate, for example, a technique described in Patent Document 1 has been used. In Patent Document 1, when a substrate is placed on a base member with a built-in heater and electrostatic adsorption of the substrate is performed, the electrostatic adsorption voltage is changed stepwise to gradually increase the temperature rise rate of the substrate. I am letting. Thereby, the curvature of a board | substrate can be reduced compared with the method of applying a large electrostatic adsorption voltage from the beginning.

JP 2002-270680 A

  As the temperature rise rate of the substrate is gradually increased, the warpage of the substrate during heating is reduced. On the other hand, in the case of cooling, the warp of the substrate at the time of cooling is reduced as the temperature decrease rate is gradually lowered.

  However, although the warpage of the substrate is reduced as the temperature increase rate and the temperature decrease rate are smoothed, it takes time until the substrate temperature reaches the predetermined temperature, which adversely affects the productivity of the semiconductor manufacturing apparatus.

  Accordingly, the main object of the present invention is to reduce the warpage of the substrate and improve the productivity of the semiconductor manufacturing apparatus from the viewpoint of throughput.

  A semiconductor manufacturing apparatus is disposed in a processing chamber, and includes a substrate holding device including an electrostatic adsorption unit that electrostatically adsorbs the back side of a surface to be processed of a substrate, and a temperature control unit that heats or cools the substrate to a predetermined temperature. A transfer arm that transfers the substrate in the processing chamber and prepares the transfer of the substrate to the substrate holding device at a predetermined transfer preparation position, and holds the substrate when the transfer arm is in the transfer preparation position. A substrate transfer mechanism for moving at least one of the apparatus and the transfer arm in a direction substantially perpendicular to the surface of the substrate, wherein the transfer arm has an elastic body attached thereto, Prior to the processing of the substrate, heating or cooling at the temperature control unit provided in the substrate holding device is started, and the transfer arm is moved by the substrate transfer mechanism. At least one of the plate holding devices is moved to transfer the substrate from the transfer arm to the substrate holding device, and then at least one of the transfer arm or the substrate holding device is further moved to be attached to the transfer arm. Further, the substrate is electrostatically attracted to the substrate holding device in a state where the elastic body is pressed against the surface to be processed of the substrate.

  When the substrate temperature is heated or cooled prior to substrate processing, the elastic surface is used to physically press the surface to be processed of the substrate, so that even if the substrate is slightly warped, it can be corrected. it can. Thereby, even when the gradient of the temperature increase rate or the temperature decrease rate is made somewhat steep, the warpage of the substrate can be reduced as in the conventional case. As a result, an adverse effect on the productivity of the semiconductor manufacturing apparatus can be reduced from the viewpoint of throughput. Further, since the elastic body is attached to the transfer arm used for transferring the substrate, it is not necessary to provide a special member for attaching the elastic body. Further, when the substrate is processed, the elastic body can be retracted from above the surface to be processed of the substrate together with the transfer arm using a mechanism related to the transfer of the substrate, so that the elastic body does not hinder the processing of the substrate.

  In addition, an opening is formed in the transfer arm, and when the substrate is electrostatically attracted with the elastic body being pressed against the surface to be processed of the substrate, the substrate is covered through the opening. A configuration in which the processing surface is exposed may be used.

  With such a configuration, the state of the surface to be processed of the substrate can be monitored through the opening formed in the transfer arm. For example, when the substrate is electrostatically attracted to the substrate holding device through this opening, the temperature of the surface to be processed of the substrate can be measured using a radiation thermometer.

  In order to avoid an abrupt change in the substrate temperature, the substrate transfer mechanism is configured to transfer the substrate until the substrate temperature reaches a predetermined temperature before the substrate is transferred from the transfer arm to the substrate holding device. The relative positional relationship between the arm and the substrate holding device may be kept constant.

  With such a configuration, the temperature of the substrate can be gently changed by the heat or cold radiated from the substrate holding device heated or cooled by the temperature control unit.

  The arrangement of the elastic body may be as follows. There are a plurality of elastic bodies, and each elastic body is attached to the transfer arm with a substantially equal gap along the circumferential direction of the substrate.

  With such a configuration, since the pressing force by the elastic body is evenly applied to the substrate, it is possible to prevent the displacement of the substrate due to the non-uniform pressing force.

  Moreover, if the electrostatic attraction of the substrate is released after the substrate processing, the substrate may be bounced by the stress inherent in the substrate. In order to prevent such a substrate from bouncing, the elastic body is configured to be pressed against the surface to be processed of the substrate when releasing the electrostatic adsorption of the substrate to the substrate holding device. It may be left.

  If the substrate jumps in the processing chamber and collides with the floor of the processing chamber or the substrate transport mechanism, the substrate may be broken by an impact. In this case, the inside of the processing chamber needs to be cleaned, and the productivity of the semiconductor manufacturing apparatus is significantly reduced. In addition, if the substrate breaks, a cost for preparing a new substrate also occurs. When releasing the electrostatic adsorption, if the treated surface of the substrate is pressed with an elastic body, the substrate that has bounced will collide with the elastic body and the impact will be absorbed by the elastic body. Can be prevented.

  When the substrate temperature is heated or cooled prior to substrate processing, the elastic surface is used to physically press the surface to be processed of the substrate, so that even if the substrate is slightly warped, it can be corrected. it can. Thereby, even when the gradient of the temperature increase rate or the temperature decrease rate is made somewhat steep, the warpage of the substrate can be reduced as in the conventional case. As a result, an adverse effect on the productivity of the semiconductor manufacturing apparatus can be reduced from the viewpoint of throughput. Further, since the elastic body is attached to the transfer arm used for transferring the substrate, it is not necessary to provide a special member for attaching the elastic body. Further, when the substrate is processed, the elastic body can be retracted from above the surface to be processed of the substrate together with the transfer arm using a mechanism related to the transfer of the substrate, so that the elastic body does not interfere with the processing of the substrate. Play.

The schematic diagram which shows an example of a semiconductor manufacturing apparatus. The schematic diagram which shows the structure in the processing chamber of FIG. The schematic diagram which shows an example of an elastic body. The schematic diagram which shows an example which concerns on the front-end | tip part of a conveyance arm. The schematic diagram which shows the mode of delivery of a board | substrate. The schematic diagram which shows a mode that the to-be-processed surface of a board | substrate is pressed by the elastic body. The schematic diagram which shows the other example which concerns on the front-end | tip part of a conveyance arm. (A) is an example in which four elastic bodies are arranged at substantially equal intervals, and (B) is an example in which three elastic bodies are arranged at substantially equal intervals. The flowchart which shows a series of processes concerning the delivery of a board | substrate, and the electrostatic attraction of a board | substrate.

  Hereinafter, as an example of a semiconductor manufacturing apparatus according to the present invention, an apparatus configuration of an ion implantation apparatus IM will be described.

  FIG. 1 is a schematic diagram showing the overall configuration of the ion implantation apparatus IM. The configuration of the ion implantation apparatus IM will be briefly described. The Z-axis direction shown in the figure is the traveling direction of the ion beam IB, the X-axis direction is the scanning direction of the ion beam IB by the scanner 6 described later, and the Y-axis direction is orthogonal to the X-axis direction and the Z-axis direction. Direction. The coordinate axes are the same as those in FIG. 1 in other figures described later. Further, the coordinate axis shown in FIG. 1 is drawn with respect to an ion beam IB incident in a processing chamber 8 described later, and the direction of the coordinate axis appropriately changes in the transport path of the ion beam IB.

  Plasma is generated in the ion source 1, and an ion beam IB having a circular cross section is extracted therefrom. Thereafter, the ion beam IB is subjected to mass analysis by the first electromagnet 2 and the analysis slit 3 to remove unwanted ion components contained in the ion beam IB. In addition, the cross section said here has pointed out the surface when the ion beam IB is cut | disconnected by XY plane shown in figure.

  The ion beam IB subjected to mass analysis is accelerated or decelerated by the acceleration / deceleration tube 4 and converted into an ion beam IB having a desired energy. Next, the ion beam IB is incident on the second electromagnet 5 where undesired energy components contained in the ion beam IB are removed.

  The ion beam IB from which unnecessary energy components have been removed by the second electromagnet 5 is scanned by the scanner 6 along one direction (X-axis direction). The scanned ion beam IB is collimated by the collimating electromagnet 7 so that the traveling directions thereof are parallel to each other at different locations in the X-axis direction, and then enters the processing chamber 8.

  In the processing chamber 8, a substrate 15 as a processing target is supported by a substrate holding device 22 (for example, a platen equipped with an electrostatic chuck and heating or cooling means). In order to set the irradiation angle of the ion beam IB to the substrate 15, the posture of the substrate holding device 22 is changed as necessary. The posture change of the substrate holding device 22 is realized, for example, by rotating the substrate holding device 22 around the Y axis shown in FIG. 1 or rotating the substrate holding device 22 around the Z axis by a drive mechanism (not shown). The

  The ion implantation process for the substrate 15 is realized by a reciprocating scan of the substrate holding device 22 across the ion beam IB incident on the processing chamber 8 along the Y-axis direction by a driving mechanism (not shown). If the posture of the substrate holding device 22 is changed before the ion implantation process, the substrate holding device 22 is reciprocally scanned along the Y-axis direction while maintaining the posture.

  Transfer of the substrate 15 to the processing chamber 8 is performed as follows. A plurality of cassettes 9 storing a plurality of substrates 15 are arranged on the atmosphere side, and the substrates 15 are transferred from the individual cassettes 9. In one cassette 9, a plurality of substrates 15 to be processed under the same injection conditions are stored.

  The substrate 15 is transferred from each cassette 9 by the transfer robot 10. After removing the substrate 15 from the cassette 9, the transfer robot 10 once places the substrate 15 on the aligner 11 and aligns the orientation of the substrate 15 in the circumferential direction. The alignment of the orientation of the substrate 15 is performed with reference to a notch formed on the outer peripheral portion of the substrate 15, for example. Thereafter, the substrate 15 is transferred from the aligner 11 into the vacuum preliminary chamber AL by the transfer robot 10.

  When the substrate 15 is transferred to the vacuum preparatory chamber AL, the lid of the vacuum preparatory chamber AL on the atmosphere side (the side where the cassette 9 is arranged in the figure) is closed, and the inside of the vacuum preparatory chamber AL is aired by a pump (not shown). Is changed to a vacuum atmosphere.

  After the vacuum preliminary chamber AL becomes a vacuum atmosphere, the passage between the vacuum preliminary chamber AL and the processing chamber 8 is opened. The processing chamber 8 is provided with two transfer arms 12 that can pivot independently about the fulcrum P, and each of the transfer arms 12 can be rotated between the vacuum preliminary chamber AL and the substrate holding device 22. Then, the substrate 15 is delivered. When the substrate 15 is transferred to the substrate holding device 22 by the transfer arm 12, the substrate holding device 22 is rotated around the X axis by a driving mechanism (not shown), and the surface to be processed of the substrate 15 (the surface irradiated with the ion beam IB). ) Is changed so as to be perpendicular to the Y-axis direction.

  FIG. 2 shows the inside of the processing chamber 8. The substrate holding device 22 includes an electrostatic attraction unit 27 and a temperature control unit 28, and is rotatably connected to the first drive mechanism M1. The first drive mechanism M1 is rotatably connected to the second drive mechanism M2, and the second drive mechanism M2 is directly connected to the third drive mechanism M3.

  The electrostatic attraction unit 27 is provided with monopolar, bipolar, or multipolar electrodes, to which a DC or AC voltage is applied. By applying this voltage, a Johnson Rabeck force or a Coulomb force is generated between the electrostatic attraction unit 27 and the substrate 15, and the substrate 15 is electrostatically adsorbed on the substrate holding device 22. The temperature control unit 28 is a controllable heating element (for example, a heater unit such as a coil) when heating the temperature of the substrate 15, and can be controlled when the temperature of the substrate 15 is cooled (for example, a heater unit such as a coil). And a chiller unit that performs cooling by circulating the refrigerant). Note that the temperature control unit 28 referred to here is a part of a unit including a power source for controlling the temperature of the substrate 15 using a heating element or a cooling body, and indicates a configuration provided inside the substrate holding device 22. .

  Each of the drive mechanisms M1 to M3 has a motor (not shown), and by the rotation of each motor, the first drive mechanism M1 rotates the substrate holding device 22 around the Y axis shown in the figure, and the second drive The mechanism M2 rotates the substrate holding device 22 and the first drive mechanism M1 around the X axis shown in the figure, and the third drive mechanism M3 rotates the substrate holding device 22, the first drive mechanism M1, and the second drive mechanism M2. Is moved linearly along the Y-axis direction shown in the figure.

  A substrate receiving portion 19 is provided below the front end portion of the transfer arm 12 (the direction opposite to the Y-axis direction), and the transfer arm 12 is swiveled with the outer peripheral portion of the substrate 15 supported at this location. Is done. When the substrate receiving portion 19 is disposed above the substrate holding device 22 while the transfer arm 12 is turning, the rotation of the transfer arm 12 is stopped. Thereafter, the substrate 15 is transferred between the transfer arm 12 and the substrate holding device 22. In the present invention, the position at which the turning of the transfer arm 12 is stopped above the substrate holding device 22 before the transfer of the substrate 15 is called a transfer preparation position. Further, the preparation for transferring the substrate 15 by the transfer arm 12 indicates a state in which the turning of the transfer arm 12 that supports the substrate 15 at the transfer preparation position is stopped.

  In addition, the elastic body 16 is attached to the transport arm 12 so as to face the outer peripheral portion of the substrate 15 supported by the substrate receiving portion 19 on the processing surface side. The elastic body 16 presses the surface to be processed of the substrate 15 when the substrate 15 comes to a position to be described later.

  A window W is provided on the wall surface of the processing chamber 8 located above the transfer arm 12, and the inside of the processing chamber 8 can be observed through the window W. Further, if the radiation thermometer 23 is disposed in the vicinity of the window W as shown in the drawing, the temperature characteristics of the surface to be processed of the substrate 15 can be measured. On the other hand, instead of measuring the temperature characteristics of the substrate 15, it may be configured so that image data can be taken. In this case, a CCD camera may be disposed at the location of the radiation thermometer 23 shown in FIG. Note that when the temperature of the substrate 15 and image capturing are performed through the window W, an opening is formed in the transfer arm 12 so that the surface to be processed of the substrate 15 extends from the location of the radiation thermometer 23 shown in FIG. It is desirable to configure it so that it can be seen sufficiently.

  Further, as shown in the figure, the measurement result of the radiation thermometer 23 may be used as the signal SI, and the signal SI may be transmitted in real time to the control device 29 that controls each of the driving mechanisms M1 to M3. Further, the electrostatic adsorption unit 27 and the temperature control unit 28 provided in the substrate holding device 22 may be controlled based on the measurement result of the radiation thermometer 23.

  FIG. 3 shows a configuration example of the elastic body 16. The elastic body 16 has a container 25, and the container 25 is attached to the transport arm 12 with an elastic body fixing bolt 17. The container 25 has a concave depression, and a lid body 24 having an opening in a part thereof is attached to the container 25 by a lid fixing bolt 20 so as to close the depression. And the front-end | tip of the pin 18 which consists of carbon, a silicon | silicone, etc. protrudes from the opening formed in the cover body 24 toward the container outer side. The pin 18 is formed with a large-diameter portion having a diameter larger than that of the opening formed in the lid body 24, and this portion is disposed in the recess of the container 25.

  A coiled spring 21 is accommodated in the recess of the container 25. One end of the spring 21 is in contact with the inner wall of the container 25 and the other end is in contact with the large diameter portion of the pin 18 described above. A part of the pin 18 disposed inside the container 25 is inserted inside the spring 21. When the surface to be processed of the substrate 15 comes into contact with the pin 18, the pin 18 is elastically biased by the spring 21 and is pressed against the surface to be processed of the substrate 15. Although a coiled spring is used here, the elastic body 16 may be configured using a leaf spring.

  FIG. 4 shows a state when the tip of the transfer arm 12 is viewed from the processing surface side of the substrate 15. When the temperature of the substrate 15 is measured by the radiation thermometer 23 or the surface to be processed of the substrate 15 is photographed by the CCD camera through the window W as in the configuration of FIG. An opening 26 (a hatched region in the drawing) is preferably formed in the transfer arm 12 so that the processing surface can be seen.

  For example, as shown in FIG. 4, there are four elastic bodies 16 that are attached to the transfer arm 12 so as to face the outer peripheral portion of the surface to be processed of the substrate 15. Although the elastic body 16 may be provided so as to face the central portion instead of the outer peripheral portion of the substrate 15, the outer peripheral portion of the substrate 15 is pressed as much as possible in consideration of scratches on the surface to be processed. It is better to arrange the elastic body 16 in this manner. In FIG. 4 and FIG. 7 according to a modified example of the transfer arm 12 described later, the outer shape of the substrate 15 is drawn with a broken line so that the positional relationship between the substrate 15 and the elastic body 16 can be understood.

  FIG. 5 is a schematic diagram showing how the substrate 15 is delivered. Here, the state when the substrate holding device 22 is moved in the Y-axis direction by the third drive mechanism M3 and the end surface of the substrate holding device 22 contacts the back surface of the substrate 15 (the back surface of the surface to be processed) is drawn. ing.

  When the substrate holding device 22 is further moved in the Y-axis direction from this state, the substrate 15 is placed on the substrate holding device 22 away from the substrate receiving portion 19 of the transfer arm 12. As a result, the substrate 15 is transferred from the transfer arm 12 to the substrate holding device 22.

  FIG. 6 is a schematic view showing a state where the surface to be processed of the substrate 15 is pressed against the elastic body 16. When the substrate holding device 22 is further moved in the Y-axis direction from the state shown in FIG. 5, the surface to be processed of the substrate 15 is pressed by the pins 18 constituting the elastic body 16 attached to the transfer arm 12. In this state, electrostatic adsorption of the substrate 15 is performed.

  FIGS. 7A and 7B show another example of the transfer arm 12. As described in FIGS. 7A and 7B, the elastic bodies 16 may be arranged at substantially equal intervals along the circumferential direction of the substrate 15. With such a configuration, the pressing force by the elastic body 16 is evenly applied to the surface to be processed of the substrate 15, so that the displacement of the unfixed substrate 15 before electrostatic adsorption can be suppressed.

  In FIG. 7A, the number of elastic bodies 16 is four, and in FIG. 7B, the number of elastic bodies 16 is three. The shape of the distal end portion of the transfer arm 12 to which the elastic body 16 is attached and the shape of the opening 26 formed in the transfer arm 12 are appropriately changed depending on the mounting position and the number of the attachments. This can be understood by comparing the configurations described in FIG. 4 and FIG.

  FIG. 8 is a flowchart showing a series of processes relating to the delivery of the substrate 15 and the electrostatic adsorption of the substrate 15. Each process S1-S6 is demonstrated. In S1, the transfer arm 12 moves to the delivery preparation position. Thereafter, the substrate holding device 22 is heated or cooled in S2. In S3, the substrate transfer mechanism (third drive mechanism M3 in the example of FIG. 2) is not driven. For this reason, the relative positional relationship between the transfer arm 12 and the substrate holding device 22 is kept constant.

  With such a configuration, the temperature of the substrate 15 can be gently changed by the radiation effect of heat or cold air from the substrate holding device 22 heated or cooled by the temperature control unit 28. Thereby, since the temperature of the board | substrate 15 does not change rapidly, the curvature by the temperature change of the board | substrate 15 can be reduced. If the set temperature of the substrate 15 is not so far from room temperature, the process corresponding to the preheating or precooling in S3 may be omitted in consideration of the productivity of the semiconductor manufacturing apparatus.

  After the temperature of the substrate 15 reaches a predetermined temperature in S3, the substrate transfer mechanism is operated in S4 to transfer the substrate 15. Specifically, the substrate holding device 22 is moved along the Y-axis direction by the third drive mechanism M3, and the substrate 15 is moved from the substrate receiving portion 19 of the transfer arm 12 to the substrate holding device 22.

  After the transfer of the substrate 15 is performed, the substrate transfer mechanism is further moved in step S5 so that the surface to be processed of the substrate 15 is pressed by the elastic body 16 attached to the transfer arm 12.

  Thereafter, electrostatic adsorption at the electrostatic adsorption unit 27 of the substrate holding device 22 is started in step S6. Here, the start of electrostatic adsorption means that application of a voltage to the electrodes constituting the electrostatic adsorption unit 27 is started. Further, it is not necessary to start electrostatic adsorption immediately after the pressing force of the elastic body 16 against the surface to be processed of the substrate 15 is started. When it is desired to change the temperature rising rate or the temperature falling rate of the substrate 15 gently, the substrate 15 may be simply pressed against the substrate holding device 22 by the elastic body 16 without starting electrostatic adsorption for a while. With such a configuration, it can be expected that the temperature of the substrate 15 changes more gently than when electrostatic adsorption is started immediately. Of course, electrostatic adsorption may be started simultaneously with the pressing force of the elastic body 16 or immediately after that. The series of processing described in FIG. 8 may be manually operated by the operator of the apparatus, but preferably it can be performed by automatic control using the control device 29 depicted in FIG. Is good.

  As described above, since the elastic body 16 physically presses the surface to be processed of the substrate 15 when the substrate temperature is heated or cooled prior to the processing on the substrate 15, the substrate 15 is slightly warped. Even if this occurs, it can be corrected. Thereby, even when the gradient of the temperature increase rate or the temperature decrease rate is made somewhat steep, the warpage of the substrate can be reduced as in the conventional case. As a result, an adverse effect on the productivity of the semiconductor manufacturing apparatus can be reduced from the viewpoint of throughput. Further, since the elastic body 16 is attached to the transfer arm 12 used for transferring the substrate 15, it is not necessary to provide a special member for attaching the elastic body 16. Further, when the substrate 15 is processed, the elastic body 16 can be retracted from above the processing surface of the substrate 15 together with the transfer arm 12 by using a mechanism related to the transfer of the substrate 15. There is also an effect that does not interfere.

<Other variations>
In the embodiments described so far, the substrate holding device 22 is moved using the third drive mechanism M3 as the substrate delivery mechanism. However, instead of this, the following configuration may be employed.

  For example, instead of a mechanism for moving the substrate holding device 22, a mechanism for moving the transfer arm 12 up and down along the Y-axis direction is provided. In this case, the drive mechanism of the transport arm 12 is complicated, but the effect of the present invention can be achieved even with such a configuration.

  Alternatively, both the transfer arm 12 and the substrate holding device 22 may be moved up and down along the Y-axis direction independently or in conjunction with each other. Such a configuration further complicates the device configuration, but can provide the same effects as the configurations described in the previous embodiments.

  In the above-described embodiment, the configuration of the ion implantation apparatus has been described as an example of the semiconductor manufacturing apparatus. However, other semiconductor manufacturing apparatuses such as a sputtering apparatus and a film forming apparatus may be used.

  Further, the configuration of the ion implantation apparatus is not limited to that shown in FIG. 1, and may be another configuration. For example, the scanner 6 may be omitted and a ribbon-shaped ion beam may be extracted from the ion source 1. Further, an ion implantation apparatus that does not include the second electromagnet 5 may be used.

  The substrate 15 handled in the present invention is not limited to a semiconductor wafer made of silicon, silicon carbide, gallium nitride, indium phosphide, or the like, or a glass substrate on which a film is formed on the front or back surface of the wafer. Any substrate may be used as long as the substrate is processed after being heated or cooled to a predetermined temperature and supported by electrostatic adsorption. Furthermore, the shape of the substrate 15 does not have to be the circular shape shown in the drawings of the embodiment, and may be a rectangular shape or other shapes.

  In addition, a configuration for gradually increasing the temperature rising rate or a temperature decreasing rate gradually by controlling the voltage applied to the electrostatic adsorption unit 27 as described in Patent Document 1 and the present invention. Combinations of configurations may be used. On the other hand, only the configuration of the present invention may be used without controlling the applied voltage. Which one is used may be appropriately selected according to the amount of warpage of the substrate 15.

  If the electrostatic attraction is released after the processing of the substrate 15, the substrate 15 may jump due to the stress inherent in the substrate 15. In order to prevent such substrate jumping, the elastic body 16 of the transfer arm 12 seems to be pressed against the surface to be processed of the substrate 15 when the electrostatic attraction of the substrate 15 to the substrate holding device 22 is released. It may be configured as follows.

  In other words, in the above-described embodiment, before the electrostatic attraction is released, the transfer arm 12 is turned and positioned at the delivery preparation position, and the substrate holding device 22 is moved in the Y-axis direction by the third drive mechanism M3. Move it to. Then, when the elastic body 16 of the transfer arm 12 is pressed against the surface to be processed of the substrate 15, the electrostatic adsorption is released. For example, the electrostatic adsorption is released by applying a voltage having a polarity opposite to the voltage applied to the electrodes constituting the electrostatic adsorption unit 27 during electrostatic adsorption.

  In the above-described embodiment, when the substrate 15 is delivered, the substrate holding device 22 is moved in the direction (Y-axis direction) perpendicular to the surface to be processed of the substrate 15, but is slightly shifted from this direction. Also good. The amount of deviation that is allowed depends on the degree of positional deviation of the substrate 15 that is allowed when the substrate 15 is delivered. For this reason, the substrate holding device 22 may be configured to move in a direction substantially perpendicular to the surface of the substrate 15 to be processed.

  In the above-described embodiment, the number of transfer arms 12 arranged in the processing chamber 8 is provided one by one so as to correspond to each vacuum preliminary chamber AL, but this number is changed to two. You may make it do. Furthermore, a plurality of vacuum preliminary chambers AL may be arranged in the Y-axis direction in FIG. 2 so as to overlap each other, and the number of transfer arms 12 may be increased to correspond to each vacuum preliminary chamber AL.

  In addition to the above, it goes without saying that various improvements and modifications may be made without departing from the scope of the present invention.

8 Processing chamber 12 Transfer arm 15 Substrate 16 Elastic body 19 Substrate receiving unit 22 Substrate holding device 27 Electrostatic adsorption unit 28 Temperature control unit

Claims (5)

A substrate holding device that is disposed in the processing chamber and includes an electrostatic adsorption unit that electrostatically adsorbs the back side of the surface to be processed of the substrate; and a temperature control unit that heats or cools the substrate to a predetermined temperature;
A transport arm that transports the substrate in the processing chamber and prepares the substrate for delivery to the substrate holding device at a predetermined delivery preparation position;
A semiconductor manufacturing apparatus comprising: a substrate transfer mechanism that moves at least one of the substrate holding device and the transfer arm in a direction substantially perpendicular to a surface of the substrate when the transfer arm is in the transfer preparation position. And
An elastic body is attached to the transfer arm,
Prior to the processing of the substrate, heating or cooling in the temperature control unit provided in the substrate holding device is started, and at least one of the transfer arm or the substrate holding device is moved by the substrate transfer mechanism, After the substrate is transferred from the transfer arm to the substrate holding device, at least one of the transfer arm or the substrate holding device is further moved to move the elastic body attached to the transfer arm to the surface to be processed of the substrate A semiconductor manufacturing apparatus in which electrostatic adsorption of the substrate to the substrate holding device is performed in a state where the substrate is pressed.   An opening is formed in the transfer arm, and when the substrate is electrostatically attracted while the elastic body is pressed against the surface to be processed of the substrate, the surface to be processed of the substrate passes through the opening. The semiconductor manufacturing apparatus according to claim 1, wherein is exposed.   The substrate transfer mechanism is configured such that the transfer arm and the substrate holding device are relatively moved until the temperature of the substrate reaches a predetermined temperature before the transfer of the substrate from the transfer arm to the substrate holding device. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the positional relationship is kept constant.   4. The semiconductor manufacturing according to claim 1, wherein there are a plurality of the elastic bodies, and each elastic body is attached to the transfer arm with gaps at substantially equal intervals along a circumferential direction of the substrate. apparatus.   5. The semiconductor manufacturing apparatus according to claim 1, wherein the elastic body is pressed against a surface to be processed of the substrate when electrostatic adsorption of the substrate to the substrate holding device is released.