CN108022856A - Heating unit, semiconductor- fabricating device - Google Patents
Heating unit, semiconductor- fabricating device Download PDFInfo
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- CN108022856A CN108022856A CN201710456969.3A CN201710456969A CN108022856A CN 108022856 A CN108022856 A CN 108022856A CN 201710456969 A CN201710456969 A CN 201710456969A CN 108022856 A CN108022856 A CN 108022856A
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- Prior art keywords
- substrate
- heater
- reflection plate
- heating
- heat reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Health & Medical Sciences (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides heating unit and semiconductor- fabricating device, can improve the efficiency of heating surface and shorten the heating-up time, so as to fulfill the low power consumption of energy is put into heater.The heating unit (20) includes：Transfer mechanism (M), has the supporting part (1) of supporting substrates (W), and substrate (W) is transferred between heating location (HP) and non-heated position (NH)；Heater (4), heats a face of substrate (W) on heating location (HP)；And heat reflection plate (2), and another face of substrate (W) it is opposite, be arranged in transfer mechanism (M), another face of heat reflection plate (2) covering substrate (W).
Description
Technical field
The present invention relates to substrate temperature is increased to the heating unit of set point of temperature before processing substrate is implemented and possess this
The semiconductor- fabricating device of device.
Background technology
The film forming for implementing the processing such as film forming and ion beam irradiation after substrate temperature is heated to set point of temperature, to the substrate fills
Put and be well known with semiconductor- fabricating devices such as ion implantation apparatuses.
An example heated as substrate, as described in patent document 1 (Japanese Laid-Open Patent Publication 2015-15330),
The substrate that one end of the arm will be supported on using the revolution of conveying arm is transferred from non-heated position to heating location, by configuring
The heater of the heating of heating location is well known the method that the substrate is heated from a surface side.
According to the substrate heating method of patent document 1, the real estate that heater side is never configured due to heat is (non-heated
Face) release, so the efficiency of heating surface is poor.Longer and heater power consumption the time required to reaching set point of temperature accordingly, there exist substrate
The problems such as increase.
The content of the invention
The present invention provides heating unit can thoroughly solve the above problems, that the efficiency of heating surface is improved and possesses the heating
The semiconductor- fabricating device of device.
The heating unit of the present invention, including：Transfer mechanism, has the supporting part of the periphery of supporting substrates, in heating location
Substrate is transferred between non-heated position；Heater, heats a face of the substrate in the heating location；And
Heat reflection plate, and another face of the substrate are opposite, are arranged on the transfer mechanism, and the heat reflection plate covering is described another
One face.
Due to there is provided covering substrate non-heated heat reflection plate, so can be anti-by the heat distributed from non-heated
The whole region of non-heated is mapped to, therefore the efficiency of heating surface of substrate improves.
By the raising of the efficiency of heating surface, the heating-up time can be shortened, the low of energy is put into so as to fulfill to heater
Power consumption.
To further improve the efficiency of heating surface of substrate, the second transfer mechanism is preferably also equipped with, second transfer mechanism exists
On the heating location, the substrate is transplanted on the heater from the supporting part, and the substrate is located at than described
Supporting part more leans on the heat reflection plate side.
According to above-mentioned second transfer mechanism, since the distance of heater and heat reflection plate is near, so the efficiency of heating surface of substrate
Further improve.
As another structure for improving the efficiency of heating surface, preferably described heat reflection plate is in towards the recessed shape of the substrate-side
Shape.
According to the heat reflection plate of above-mentioned recessed shape, the heat distributed from non-heated can be reflected efficiently to non-
Heat surface side.
In order to measure the temperature of real estate or adjust the Temperature Distribution of real estate, formed with opening on preferably described heat reflection plate
Mouthful.
If possessing opening on heat reflection plate, the temperature that can be carried out substrate using radiation thermometer from the opening is surveyed
It is fixed.In addition, by improving the size being open, shape, position etc., moreover it is possible to adjust the Temperature Distribution of the real estate of heat reflection plate side.
For fixed bearing substrate on the heaters, preferably described heater possess the substrate is fixedly supported upon it is described
Mechanical, electrostatic or vacuum type fixed bearing device on heater.
The structure of the invention being improved according to the efficiency of heating surface, can be reached in the short time by above-mentioned fixed bearing device
To stably and firmly fixed supported condition.
As the device for possessing above-mentioned heating unit, it may be considered that be fixedly attached to the heater, the substrate
The upper semiconductor- fabricating device for implementing semiconductor fabrication processing.
According to this semiconductor- fabricating device, since preceding process that is, the heating of semiconductor fabrication processing can be terminated the short time
Process, therefore the whole activity duration of processing substrate needs can be shortened.
Due to the heat reflection plate of the non-heated equipped with covering substrate, so the heat distributed from non-heated can be reflected
To the whole region of non-heated, so that the efficiency of heating surface of substrate improves.
By the raising of the efficiency of heating surface, the heating-up time can be shortened, the low of energy is put into so as to fulfill to heater
Power consumption.
Brief description of the drawings
Fig. 1 is the schematic diagram for the topology example for representing the heating unit of the present invention.
Fig. 2 is schematic diagram when being shifted into the substrate of heating location in the heating unit of Fig. 1 from side.
Fig. 3 be represent to possess transfer the second transfer mechanism of heater, heating unit an example schematic diagram.
Schematic diagram when Fig. 4 is the substrate that the supporting part viewed from above by transfer mechanism supports.
Fig. 5 is the explanatory drawin of the variation on heat reflection plate, and (A) of Fig. 5 is X/Y plane figure, and (B) of Fig. 5 is along Fig. 5
(A) in V-V lines, Z-direction by shown in (A) of Fig. 5 configuration example cut off when section.
Fig. 6 is the schematic diagram for representing to possess heating unit, semiconductor- fabricating device an example of the present invention.
Fig. 7 is the signal from side in the semiconductor- fabricating device of Fig. 6, when being shifted into the substrate of heating location
Figure.
Fig. 8 is to represent the result of the test that between substrate and electrostatic chuck, static capacity changes over time.
Description of reference numerals
W substrates
1 supporting part
2 heat reflection plates
3 openings
4 heaters
10 conveying arms
20 heating units
HP heating locations
The non-heated positions of NH
M transfer mechanisms
The second transfer mechanisms of M2
Embodiment
Illustrate the configuration example of the heating unit of the present invention following with Fig. 1, Fig. 2.
As shown in Figure 1, heating unit 20 possess transferred between heating location HP and non-heated position NH substrate W (such as
The semiconductor substrate such as silicon or diamond dust, and the glass substrate such as unorganic glass or quartz glass) transfer mechanism M.
The transfer mechanism M of diagram, is the mechanism that substrate W transfers are carried out using revolution, it possesses：Driven using motor etc. one end
Dynamic source 12 surrounds the conveying arm 10 that rotation axis 11 rotates；It is located on the other end of conveying arm 10, the peripheral end of supporting substrates W
Supporting part 1；And the heat reflection plate 2 that the substrate W with being supported on supporting part 1 is opposite.
Heat reflection plate 2 covers the non-heated of substrate W.In other words, heat reflection plate 2 and the phase of the non-heated of substrate W
It is identical with the area of non-heated to area, or the area more than non-heated, as the substrate W from 2 side of heat reflection plate,
Substrate W is blocked invisible by heat reflection plate 2.That is, the non-heated whole face of substrate W is covered.
By using this heat reflection plate 2, make from the heat that non-heated distributes to non-heated lateral reflection, spread all over non-add
The entirety in hot face and obtain heat reflection effect.
As heat reflection plate 2, the high metal of the reflection efficiencies such as aluminium, copper is used.On the other hand, if to prevent metal material
Material is mixed into substrate, although then reflectivity slightly declines, still considers using the nonmetallic materials outside above-mentioned metal material.
Further, it is also possible to the opposite face or whole surface plated film of metal material and substrate are prevented by using nonmetallic materials
Only metal material is mixed into substrate.At this time, nonmetallic materials use the material through heat, and metal material is using the material for reflecting heat
Material.
Moreover, heating unit 20 possesses heater 4 on heating location HP.Substrate W is transplanted on heating position by transfer mechanism M
After putting HP, heated by heater 4.
Fig. 2 illustrates the state that substrate W is heated on heating location HP.Heater 4 and substrate W, substrate W and heat reflection
The arrow described between plate 2, simply represents between substrate W and heat reflection plate 2, heat inflow and outflow, and heat is from adding
Inflow of the hot device 4 to substrate W.
Structure according to the invention, heat reflection plate 2 as by the non-of the rear side heat, real estate of heater 4 with adding
Hot face is oppositely arranged.The heat reflection plate 2 is as shown in the figure, be maintained between supporting part 1 and conveying arm 10.
By setting the heat reflection plate 2, the heat that is distributed from the non-heated surface side of substrate W can be made anti-to substrate-side
Penetrate.As a result, substrate W the efficiency of heating surface improve, can shorten the heating-up time, realize to heater 4 input energy low power consumption
Change.
In said structure example, multiple supporting parts 1 are bolted on conveying arm 10, but conveying arm 10 and supporting part 1
Can also integration.In addition, as heat reflection plate 2, independent component is set in the above embodiment, but the heat of the present invention is anti-
Penetrate plate 2 and be not limited to this structure.For example, a part for conveying arm 10 can be maximized, using the position of maximization as hot anti-
Plate 2 is penetrated to use.
But if it is considered that the size of the substrate W of alignment processing and the influence to the temperature distributing characteristic in real estate etc.,
Appropriate size and shape for changing heat reflection plate 2 etc., then preferred heat reflection plate 2 and conveying arm 10 are provided separately.
Illustrate, to further improve the efficiency of heating surface, to possess in Fig. 3 and make the driving that is connected with heater 4 using driving source 22
Axis 13 moving in the direction of the arrow, the configuration example of the second transfer mechanism M2.
In second transfer mechanism M2, heater 4 to the direction of arrow move when, substrate W is abutted with the upper surface of heater 4.
In the above-described state, by further moving heater 4 to 2 side of heat reflection plate, substrate W is transplanted on heater 4 from supporting part 1
On.
In the heating process after substrate W is transplanted on heater 4, the configuration example compared to Fig. 1, Fig. 2, due to heater
4 approach with the distance of heat reflection plate 2, therefore the efficiency of heating surface further improves.
The opportunity of W is heated the substrate with heater, can be carried out after substrate W is transferred to heater 4.
Furthermore, it is possible to individually, the heating of substrate W is carried out before substrate W to be transplanted on to heater 4.2 can specifically be used
The heating means in stage, i.e. before substrate W is transferred to heater 4, in the state of substrate W and heater 4 are separated, temporarily use
Heater 4 heats the substrate W.Then, substrate W is transferred to heater 4 after substrate temperature reaches set point of temperature, to substrate W into
One step heats, so as to reach target temperature.
According to the heating means in this 2 stage, when substrate W is supported on substrate back, on supporting part 1 that bearing area is small
When, it can obtain the thermal stress of the thermal deformation of adjoint substrate W and discharge to a certain extent.Therefore, compared to the supporting in substrate back
The situation of whole thermal stress is discharged on the big heater 4 of area, the scratch of substrate back and the danger of substrate crushing can be reduced.
The structure of second transfer mechanism M2, is not limited to the topology example that Fig. 3 is painted.For example, substitution moves heater 4,
Can move conveying arm 10.Furthermore, it is possible to heater 4 and 10 both sides of conveying arm are made all to move.
The above situation generally, as long as the second transfer mechanism M2 on heating location HP, substrate W from supporting part 1
Heater 4 is transplanted on, and substrate W is located at the mechanism for more leaning on 2 side of heat reflection plate than supporting part 1.
Structure as heat reflection plate 2, it may be considered that various modifications example.For example, it may be structure described in Fig. 4, Fig. 5.
Opening 3 is formed in Fig. 4 in a part for heat reflection plate 2.The quantity of opening 3 can be multiple or single.
In addition, the shape of opening 3 can not be circle, but rectangle or triangle etc. are variously-shaped, and the position of formation is also not necessarily limited to
The position of diagram.
If forming this opening 3, such as base can be carried out by opening 3, from the top of substrate W using radiation thermometer
The temperature measuring of plate W.In addition, size, shape, position for passing through improvement opening 3 etc., moreover it is possible to adjust 2 side of heat reflection plate, substrate
The Temperature Distribution in face.
According to the topology example of Fig. 4, when carrying out equipped with conveying arm 10, substrate center from surface with radiation thermometer
During the temperature measuring in portion, in a manner of being exposed using the substrate center portion as measure object, in 10 both sides of heat reflection plate 2 and conveying arm
It is upper to form opening 3.In addition, the temperature survey of replacement radiation thermometer, can use the temperature of thermocouple measurement substrate W.In addition,
Temperature survey can also use conventional known various methods.
Instead of flat heat reflection plate 2, recorded in Fig. 5 and used formation towards substrate-side concave shape, heat reflection
The configuration example of plate 2.
(A) of Fig. 5 is viewed from above in heating location HP, the top view of conveying arm 10.(B) of Fig. 5 is to use Fig. 5
(A) in as chain-dotted line describe V-V lines, along Z-direction by (A) of Fig. 5 shown in configuration example cut-out when sectional drawing.
The heat reflection plate 2 is the component for having internal face, and the internal face is from the tabular surface along conveying arm 10 and conveying
10 side of arm is gradually extended towards substrate W sides.
, as shown by arrows in FIG., can the heat that distributed from non-heated is more effective by using this heat reflection plate 2
Ground is to substrate lateral reflection.
In addition, the example as concave shape, is not limited to above-mentioned shape.For example, the internal face gradually extended can be non-
Linear change.
Described in Fig. 6, Fig. 7 and possess so far described heating unit 20, semiconductor- fabricating device the configuration example.It is above-mentioned
Semiconductor- fabricating device described in figure is ion implantation apparatus IM, is the device same with Fig. 1 of patent document 1.
Ion gun 61 projects the ion beam IB of substantially point-like, and quality analysis electromagnet 62 and analysis slit 63 are to from ion gun
The 61 ion beam IB projected carry out quality analysis, and acceleration and deceleration device 64 makes ion beam IB accelerate or slow down.Then, energy separation
Device 65 makes only to lead to downstream comprising desired energy, ion beam IB component, and scanner 66 scans ion beam in one direction
IB.Scanned ion beam IB makes ion beam direct of travel with ion beam IB parallel to each other using parallelizer 67 is passed through
Mode, deflection and incident process chamber 68.
The heating unit 20 of the present invention is equipped with process chamber 68.The heating unit 20 possesses transfer mechanism M, it is not using
The driving source of diagram can surround that rotation axis 11 is independently turning round, possesses heat reflection plate 2 on end of 2 conveying arms 10.Drag-over unit
Substrate W is supported on the supporting part 1 of conveying arm 10 by structure M, in the prechamber AL as non-heated position NH and as heating
Substrate W is transferred between the injection phase of position HP.
The heating unit 20 possesses the second transfer mechanism M2 that Fig. 3 illustrates.In addition, as shown in fig. 7, comprises make to possess quiet
The heater 4 of electric card disk E rotates the twist mechanism Tw of arbitrary angle around X-axis, and encloses heater 4 and twist mechanism Tw
The leaning device Ti of arbitrary angle is rotated around Y-axis.Moreover, radiation thermometer 73 can be used from the ceiling of process chamber 68 by sight
Examine the temperature that mouth 74 measures substrate W.
In the state of substrate W is supported on supporting part 1, substrate W is heated to substrate with the heater 4 below substrate
Untill temperature reaches the first temperature.Then, using the second transfer mechanism M2, after substrate W is transplanted on heater 4, in substrate W
In the state of being carried on heater 4, substrate W is heated to substrate temperature and reaches second temperature (substrate temperature of final goal)
Untill.
After substrate W is transplanted in heater 4, conveying arm 10 to the direction of non-heated position NH by turning round, from adding
Remove the top of hot device 4.Then, in a manner of irradiating ion beam IB to substrate W by arbitrary angle, made with leaning device Ti
Substrate W is rotated around Y-axis.The posture of the illustrated heaters 4 of Fig. 6, be with leaning device Ti after the state of Fig. 7 is rotated by 90 °
State.In this condition, heater 4 is conveyed back and forth along the direction of the arrow shown in Fig. 7 by using the second transfer mechanism M2,
Carry out the ion beam irradiation process to substrate W.
Fig. 8 is the result of the test of the ion implantation apparatus IM of Fig. 6, Fig. 7.The result of the test, which illustrates, whether there is heat reflection plate
In the case of 2, the difference using electrostatic chuck E by substrate W fixed bearings into the stable and firm state required time.In Fig. 8
Result of the test in, whether there is the condition beyond heat reflection plate 2, there is no difference in structure.
The static capacity of the longitudinal axis shown in Fig. 8, is the static capacity between substrate W and electrostatic chuck E.Static capacity is public
The direct capacitance flowmeter measurement known.
When not utilizing the heater 4 to heat the substrate W, with the clamping voltage of 700V, will not have with electrostatic chuck E under normal temperature state
The value of static capacity between when the substrate W of thermal strain is adsorbed onto on heater 4, substrate W and electrostatic chuck E, equivalent to Fig. 8
80% shown static capacity.When static capacity is close to 80%, the thermal strain of substrate W fully relaxes, and judgement has reached energy
Substrate W is stably and firmly fixedly supported upon the state on heater 4, it is possible into subsequent processing (using electrostatic chuck into
The fixed bearing of row substrate).
Time point transverse axis, that the time is 0 second shown in Fig. 8, represents the substrate W being supported on supporting part 1 and is added by heater 4
Heat is after 30 seconds, substrate W is transplanted on time point on heater 4 by the second transfer mechanism M2.
As shown in Figure 8, the structure of the invention for possessing heat reflection plate 2 is compared with the structure for not possessing heat reflection plate 2, this hair
Bright structure static capacity does sth. in advance to reach 80% in about 240 seconds.Therefore, can be big according to the structure of the invention for possessing heat reflection plate 2
Width, which shortens to reach, to be met to stablize and firmly fix the time of the condition of supporting substrates.
It is the structure for transferring substrate W revolutions as transfer mechanism M, conveying arm 10, but also may be used in embodiment above
Turned round with replacement, be the structure that substrate W is transferred using linear motion.For example, it may be substrate branch is set in the center of conveying arm
Bearing portion, makes the structure that the both ends of conveying arm slide using straight-line motion mechanism.
In addition, the use environment of the heating unit 20 of the present invention, can be that vacuum can also be air.
Moreover, as the semiconductor- fabricating device beyond the ion implantation apparatus shown in Fig. 6, Fig. 7, heating of the invention dress
Put 20 and can be applied in film formation device etc., on other devices for needing the pre-add of substrate to be heat-treated.
As the device of the fixed bearing substrate W on heater 4, electrostatic chuck E has been illustrated, but is that instead of electrostatic card
Disk E, can use in the past known mechanical or vacuum type fixed bearing device.Further, it is also possible to combine above-mentioned solid
Determine supporting arrangement.
In the above embodiment, conveying arm 10 is the component of long plate shape, but conveying arm shape not limited to this, moreover it is possible to is used
Circle, triangle etc. are variously-shaped.
Additionally, this invention is not limited to the above embodiment, can be carried out in the range of its invention thought is not departed from various
Deformation.
Claims (7)
- A kind of 1. heating unit, it is characterised in that including：Transfer mechanism, has the supporting part of supporting substrates, substrate is transferred between heating location and non-heated position；Heater, heats a face of the substrate in the heating location；AndHeat reflection plate, and another face of the substrate are opposite, are arranged on the transfer mechanism,Described another described face of heat reflection plate covering.
- 2. heating unit according to claim 1, it is characterised in that be also equipped with the second transfer mechanism, second transfer Mechanism is transplanted on the heater on the heating location, by the substrate from the supporting part, and is located at the substrate The heat reflection plate side is more leaned on than the supporting part.
- 3. heating unit according to claim 1 or 2, it is characterised in that the heat reflection plate is in towards the substrate-side Recessed shape.
- 4. heating unit according to claim 1 or 2, it is characterised in that formed with opening on the heat reflection plate.
- 5. heating unit according to claim 1 or 2, it is characterised in that the heater, which possesses, fixes the substrate Mechanical, electrostatic or vacuum type the fixed bearing device being supported on the heater.
- 6. heating unit according to claim 3, it is characterised in that the heater possesses the substrate fixed bearing Mechanical, electrostatic or vacuum type fixed bearing device on the heater.
- A kind of 7. semiconductor- fabricating device, it is characterised in thatPossess heating unit as claimed in claim 5,Semiconductor fabrication processing is implemented to the substrate for being fixedly supported upon the heater.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-212480 | 2016-10-31 | ||
| JP2016212480 | 2016-10-31 | ||
| JP2017060205A JP6376236B2 (en) | 2016-10-31 | 2017-03-24 | Heating equipment, semiconductor manufacturing equipment |
| JP2017-060205 | 2017-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108022856A true CN108022856A (en) | 2018-05-11 |
Family
ID=62079245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710456969.3A Pending CN108022856A (en) | 2016-10-31 | 2017-06-16 | Heating unit, semiconductor- fabricating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108022856A (en) |
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| JPH01191777A (en) * | 1988-01-27 | 1989-08-01 | Fujikura Ltd | Device for producing long-sized oxide-based superconductor |
| JPH10284569A (en) * | 1997-04-08 | 1998-10-23 | Toshiba Mach Co Ltd | Wafer conveyer |
| JPH11183038A (en) * | 1997-12-18 | 1999-07-06 | Toray Ind Inc | Heating furnace |
| JP2002319473A (en) * | 2001-04-23 | 2002-10-31 | Toray Ind Inc | Heating furnace |
| JP2003347282A (en) * | 2002-05-29 | 2003-12-05 | Toshiba Corp | Method for plasma treatment and apparatus therefor |
| JP2005043042A (en) * | 2003-07-09 | 2005-02-17 | Canon Inc | Heating and cooling method, method of manufacturing image display, heating and cooling device, and heating and cooling processor |
| JP2015015330A (en) * | 2013-07-04 | 2015-01-22 | 日新イオン機器株式会社 | Semiconductor manufacturing device |
| JP2015186412A (en) * | 2014-03-26 | 2015-10-22 | 日本電信電話株式会社 | Photovoltaic power generation system |
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2017
- 2017-06-16 CN CN201710456969.3A patent/CN108022856A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191777A (en) * | 1988-01-27 | 1989-08-01 | Fujikura Ltd | Device for producing long-sized oxide-based superconductor |
| JPH10284569A (en) * | 1997-04-08 | 1998-10-23 | Toshiba Mach Co Ltd | Wafer conveyer |
| JPH11183038A (en) * | 1997-12-18 | 1999-07-06 | Toray Ind Inc | Heating furnace |
| JP2002319473A (en) * | 2001-04-23 | 2002-10-31 | Toray Ind Inc | Heating furnace |
| JP2003347282A (en) * | 2002-05-29 | 2003-12-05 | Toshiba Corp | Method for plasma treatment and apparatus therefor |
| JP2005043042A (en) * | 2003-07-09 | 2005-02-17 | Canon Inc | Heating and cooling method, method of manufacturing image display, heating and cooling device, and heating and cooling processor |
| JP2015015330A (en) * | 2013-07-04 | 2015-01-22 | 日新イオン機器株式会社 | Semiconductor manufacturing device |
| JP2015186412A (en) * | 2014-03-26 | 2015-10-22 | 日本電信電話株式会社 | Photovoltaic power generation system |
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