JPS60123025A - Heating device - Google Patents
Heating deviceInfo
- Publication number
- JPS60123025A JPS60123025A JP22991783A JP22991783A JPS60123025A JP S60123025 A JPS60123025 A JP S60123025A JP 22991783 A JP22991783 A JP 22991783A JP 22991783 A JP22991783 A JP 22991783A JP S60123025 A JPS60123025 A JP S60123025A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wafer
- graphite
- heating
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 50
- 230000002093 peripheral effect Effects 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 27
- 229910002804 graphite Inorganic materials 0.000 abstract description 27
- 239000010439 graphite Substances 0.000 abstract description 27
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 6
- 238000004804 winding Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 49
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は板状部材を加熱する技術に関し、特に半導体ウ
ェーハ等の板状部材を均一に加熱して加熱むらによる歪
の発生を防止した加熱技術に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a technique for heating a plate-shaped member, and in particular to a heating technique that uniformly heats a plate-shaped member such as a semiconductor wafer and prevents the occurrence of distortion due to uneven heating. It is.
半導体装置の製造工程では種々の加熱工程があるが、そ
の中の一つに不純物をイオン打込みした半導体基板（ウ
ェーハ）を所定温度で加熱することによりイオン打込層
の電気的活性化を図り所要の接合を形成する工程がある
。この加熱に際しては、中位の温度で比較的にゆっくり
とした加熱を行なうことが考えられるが、近年の半導体
装置の微細化に伴なって０．２μｍ以下の浅い接合が要
求されるようになると前述の加熱も高温でかつ短時間で
行なうことが必要となりてきている。There are various heating processes in the manufacturing process of semiconductor devices, and one of them is to heat the semiconductor substrate (wafer) into which impurities have been ion-implanted at a predetermined temperature to electrically activate the ion-implanted layer. There is a process of forming a bond. When performing this heating, it is possible to perform heating relatively slowly at a medium temperature, but with the miniaturization of semiconductor devices in recent years, shallow junctions of 0.2 μm or less are required. It has become necessary to perform the above-mentioned heating at a high temperature and in a short period of time.
そのため、この種の加熱装置として、第１図に示すよう
に半導体ウェーハ１を支持する反射板２と、この反射板
２に対向配置したグラファイトヒータ３とを備えており
、このグラファイトヒータ３を半導体ウェーハ１の全面
をカバーする以上の面積にわたって形成した構成の装置
が考えられる。Therefore, as shown in FIG. 1, this type of heating device is equipped with a reflection plate 2 that supports a semiconductor wafer 1, and a graphite heater 3 placed opposite to this reflection plate 2. An apparatus configured to be formed over an area larger than that covering the entire surface of the wafer 1 is conceivable.
そして、このグラファイトヒータ３の輻射熱および反射
板２による輻射熱の反射熱によって半導体ウェーハ１の
加熱を行なっており、これにより高温高速の加熱を可能
にしているのである。The semiconductor wafer 1 is heated by the radiant heat of the graphite heater 3 and the reflected heat of the radiant heat by the reflector plate 2, thereby making it possible to heat the semiconductor wafer 1 at high temperatures and high speeds.
しかしながら、この加熱装置を使用して実際に加熱を行
なってみると、半導体ウェーハ１の中心部と周辺部とで
加熱温度差（加熱むら）が生じ、周辺部の温度が中心部
や中帯部よりも低温になることが判明した。そして、こ
の温度差によって周辺部の転位密度が多くなる等の熱応
力転位が発生し、半導体装置の特性低下等の重大な問題
を生じる原因となっている。この原因は、本発明者の考
察によれば、半導体ウェーハの周辺部は周側面における
外気との接触面積が太きいため、熱の放散がその分著し
く、他の部分に比較して加熱の効率が低いことによるも
のと思われる。However, when this heating device is used to actually perform heating, a heating temperature difference (uneven heating) occurs between the center and the periphery of the semiconductor wafer 1. It was found that the temperature was lower than that of This temperature difference causes thermal stress dislocations such as an increase in dislocation density in the peripheral area, causing serious problems such as deterioration of the characteristics of the semiconductor device. The reason for this is that, according to the inventor's considerations, the peripheral area of the semiconductor wafer has a large surface area in contact with the outside air on the peripheral side surface, so heat dissipates significantly, and the heating efficiency is higher than in other areas. This seems to be due to the low
本発明の目的は半導体ウェーハ等の板状部材を全面にわ
たって均一に、しかも高温高速加熱した場合にも加熱む
らの発生することのない加熱技術を提供することにある
。An object of the present invention is to provide a heating technique that does not cause uneven heating even when a plate-shaped member such as a semiconductor wafer is heated uniformly over the entire surface at a high temperature and high speed.
また、本発明の目的は板状部材の寸法、形状の違いに応
じて夫々好適な均一加熱を行なうことができる加熱技術
を提供することにある。Another object of the present invention is to provide a heating technique that can perform suitable uniform heating depending on the size and shape of the plate member.
本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおり−である。A brief summary of typical inventions disclosed in this application is as follows.
すなわち、板状部材に対向位置するヒータの形状や位置
を適宜調整して板状部材に対する加熱温度分布を中心部
よりも周辺部が高くなるような分布とすることにより、
板状部材の周辺部における放熱にかかわらず板状部材を
均一に加熱でき、これにより半導体ウェーハの加熱に適
用したときには加熱むらに伴なう歪の発生を防止して特
性の信頼性を高いものにすることができる。That is, by appropriately adjusting the shape and position of the heater located opposite the plate-shaped member, the heating temperature distribution for the plate-shaped member is made to be higher in the peripheral area than in the center.
The plate-shaped member can be heated uniformly regardless of heat dissipation in the peripheral area of the plate-shaped member, and when applied to heating semiconductor wafers, it prevents distortion caused by uneven heating and increases the reliability of characteristics. It can be done.
〔実施例１〕
第２図は本発明の一実施例である加熱装置の概略図を示
し、１は加熱される板状部材としての半導体ウェーハ、
４は加熱用のヒータである。前記半導体ウェーハ１は反
射板２０表面に適宜な支持具５によって支持されており
、前記ヒータ４は半導体ウェーハ１に若干の間隔をおい
て対向配置されている。通常これら半導体ウェーハ１と
ヒータ４は気密なケーシング（図示せず）内に配置され
、所要のガス雰囲気あるいは真空に設定される。[Example 1] FIG. 2 shows a schematic diagram of a heating device that is an example of the present invention, in which 1 indicates a semiconductor wafer as a plate-like member to be heated;
4 is a heater for heating. The semiconductor wafer 1 is supported on the surface of a reflecting plate 20 by a suitable support 5, and the heater 4 is placed opposite to the semiconductor wafer 1 with a slight distance therebetween. Normally, the semiconductor wafer 1 and heater 4 are placed in an airtight casing (not shown) and set in a required gas atmosphere or vacuum.
前記ヒータ４は線状のグラファイト（ヒータ）６を円錐
形状に渦巻形成し、その両端に通電してグラファイト６
を発熱させ、輻射熱によりウェーハ１を加熱する。この
場合、第３図に側面図を示すように、ヒータ４はウェー
ハ１よりも若干大径寸法にグラファイト６を巻回形成す
ると共に１周辺部６ａが中央部６ｂよりもウェーハ１に
接近するような姿勢に支持させている。なお、ヒータ４
の支持構造は図示を省略している。The heater 4 is formed by spirally forming a linear graphite (heater) 6 into a conical shape, and by applying electricity to both ends of the spiral graphite 6.
generates heat and heats the wafer 1 by radiant heat. In this case, as shown in the side view in FIG. 3, the heater 4 is formed by winding graphite 6 to have a diameter slightly larger than that of the wafer 1, and the peripheral portion 6a of the heater 4 is formed closer to the wafer 1 than the central portion 6b. It supports this attitude. In addition, heater 4
The supporting structure is omitted from the illustration.
以上の構成によｔば、ヒータ４は周辺部６ａ、中心部６
ｂが均一に発熱されるが、周辺部６ａは中心部６ｂより
もウェーハ１に接近されているため、これに対応するウ
ェーハ１では中央部１ｂよりも周辺部１ａの方が輻射伝
導における熱ロスが少なくなり、相対的に高い温度で加
熱されることになる。この温度分布を同図の左側に示す
。According to the above configuration, the heater 4 has a peripheral portion 6a and a central portion 6a.
b is uniformly heated, but since the peripheral part 6a is closer to the wafer 1 than the central part 6b, in the corresponding wafer 1, the peripheral part 1a has more heat loss due to radiation conduction than the central part 1b. will be heated at a relatively high temperature. This temperature distribution is shown on the left side of the figure.
したがって、ウェーハ１では周辺部１ａにおける放熱性
が中心部１ｂよりも大きくて加熱効率が低いとしても、
その分中心部１ｂよりも高温で加熱すれることから、結
局ウェーハ１は周辺部１ａないし中心部１ｂにわたって
ほぼ均一に加熱されることになる。これにより、高温高
速の加熱を行なってもウェーハ１における熱応力転位の
発生を抑止でき、製造される半導体装置の特性の安定化
および信頼性を確保することができる。Therefore, in the wafer 1, even if the heat dissipation in the peripheral part 1a is greater than that in the central part 1b and the heating efficiency is lower,
Since the wafer 1 is heated at a higher temperature than the center portion 1b, the wafer 1 is heated almost uniformly from the peripheral portion 1a to the center portion 1b. Thereby, even if high-temperature and high-speed heating is performed, the occurrence of thermal stress dislocations in the wafer 1 can be suppressed, and the stability and reliability of the characteristics of the manufactured semiconductor device can be ensured.
〔実施例２〕
第４図は本発明の他の実施例を示し、特にヒータとウェ
ーハをのみ図示している。本例のヒータ７はグラファイ
ト８をつづら折り状に平面配置した構成とする一方で、
ウェーハ１の周辺部１ａに対向するグラファイト一部ｆ
ｊ ａを他の部位８ｂ（ウェーハ１の中心部１ｂに対向
する部位）よりも狭幅に形成し、ウェー１周辺部１ａに
対する輻射熱（効率）を中心部１ｂに対するよりも大き
くなるようにしている。これは、オームの法則（ｐ＝Ｉ
Ｒ”）の理由による。[Embodiment 2] FIG. 4 shows another embodiment of the present invention, in particular only the heater and wafer are shown. The heater 7 of this example has a structure in which graphite 8 is arranged on a plane in a meandering shape, while
A portion of graphite f facing the peripheral portion 1a of the wafer 1
The width of the wafer 1 is made narrower than the other portion 8b (the portion facing the center portion 1b of the wafer 1), so that the radiant heat (efficiency) to the peripheral portion 1a of the wafer 1 is greater than that to the center portion 1b. . This is based on Ohm's law (p=I
R”).
したがって、本例においても前例と同様につ工−ハ１周
辺部１ａを中心部１ｂよりも高熱条件で加熱することが
でき、結局ウェーハ１の均一加熱を達成することかで曽
る。−
なお、グラファイトは第５図のように平面渦巻状のグラ
ファイト９として形成し、その周辺部９ａのグラファイ
トを中心部９ｂよりも狭幅に形成することもできる。Therefore, in this example as well, as in the previous example, the peripheral area 1a of the wafer 1 can be heated under a higher temperature condition than the central area 1b, and in the end uniform heating of the wafer 1 can be achieved. - The graphite may be formed as a planar spiral graphite 9 as shown in FIG. 5, and the graphite at the peripheral portion 9a may be formed narrower than the central portion 9b.
〔実施例３〕
第６図は更に他の実施例を示す。本例のヒータ１０は複
数個（本例では４個）の径の異なる円環状のグラファイ
ト１１，１２，１３．１４を夫々独立して同心平面位置
に配置し、かつ各グラファイト１１，１２，１３，１４
には夫々個別に通電制御できるように構成している。こ
のため、中心側のグラファイト１１や１２に対して周辺
側のグラファイト１３，１４への通電量を相対的に大と
すれば、ヒータ１０全体としては中心側部位よりも周辺
側が高温加熱される状態となり、結局対向するウェーハ
１は中心部１ｂよりも周辺部１ａの加熱温度が高くなる
ため、前例と同様にウェーハ全体として均一に加熱され
る。[Embodiment 3] FIG. 6 shows still another embodiment. The heater 10 of this example has a plurality of (four in this example) annular graphites 11, 12, 13, and 14 having different diameters arranged independently in concentric plane positions, and ,14
The structure is such that energization can be controlled individually for each. Therefore, if the amount of electricity applied to the graphite 13 and 14 on the peripheral side is relatively larger than the graphite 11 and 12 on the center side, the heater 10 as a whole is in a state where the peripheral side is heated to a higher temperature than the center side. As a result, the heating temperature of the peripheral portion 1a of the opposing wafer 1 is higher than that of the center portion 1b, so that the entire wafer is uniformly heated as in the previous example.
なお、グラファイトは５個似上に分割配設してもよく、
温度分布を更に細かく制御することもできる。In addition, graphite may be divided into five pieces and placed on top.
It is also possible to control the temperature distribution more precisely.
〔実施例４〕
第７図の実施例のヒータ１５はくし状に形成した一対の
グラフアイ）１６．１７を夫々対向配紛し、かつ図外の
駆動機構によって両グラファイト１６．１７の対向間隔
を図示太線矢印のように変化できるように構成したもの
である。そして、これらのグラファイト１６，１７の間
隔を次第に大きくしてゆけばウェーハ１の中央部１ｂに
対向スるグラフアイ）１６，１７の面積が小となり、大
部分がウェーハ１の周辺部１ａに対向するようになる。[Embodiment 4] The heater 15 of the embodiment shown in FIG. 7 has a pair of comb-shaped graphite eyes) 16, 17 disposed facing each other, and a drive mechanism (not shown) controls the distance between the opposing graphites 16, 17. It is configured to be able to change as shown by the bold line arrow in the figure. If the distance between these graphites 16 and 17 is gradually increased, the area of the graphites 16 and 17 that face the central part 1b of the wafer 1 becomes smaller, and most of them face the peripheral part 1a of the wafer 1. I come to do it.
これにより、ウェーハ１中心部よりも周辺部の加熱温度
を高め、ウェーハ１の均一加熱を可能とする。As a result, the heating temperature of the peripheral portion of the wafer 1 is higher than that of the central portion of the wafer 1, and uniform heating of the wafer 1 is made possible.
〔実施例５〕
第８図の実施例のヒータ２０は、ウェーハ１に対向され
るヒータとしては第１図に示したものと同じグラファイ
ト１８を使用してヒータ全面で均一に発熱し得るよう構
成する一方、グラファイト１８とウェーハ１との間に遮
熱板１９を介装配置している。この遮熱板１９はウェー
ハ１の中心部１ｂＫ対向する位置に設け、グラファイト
１８の熱が直接にはウェーハ１の中心部１ｂに輻射され
ないようになっている。これにより、グラファイト１８
では均一に発熱されてもウェーハ１の周辺部１ａは中心
部１ｂより加熱温度が高くなるたへウェーハ１の均一加
熱を達成できる。[Embodiment 5] The heater 20 of the embodiment shown in FIG. 8 is constructed so that the same graphite 18 as shown in FIG. 1 is used as the heater facing the wafer 1 so that heat can be generated uniformly over the entire surface of the heater. Meanwhile, a heat shield plate 19 is interposed between the graphite 18 and the wafer 1. The heat shield plate 19 is provided at a position facing the center 1bK of the wafer 1, so that the heat of the graphite 18 is not directly radiated to the center 1b of the wafer 1. As a result, graphite 18
Even if heat is generated uniformly, the heating temperature of the peripheral portion 1a of the wafer 1 is higher than that of the central portion 1b, so that uniform heating of the wafer 1 can be achieved.
（１）板状部材に対向して設けたヒータによる板状部材
への加熱温度分布特性を、板状部材の中心部よりも周辺
部において高温になるような特性としているので、板状
部材の周辺部における放熱性が高くて加熱効率が低い場
合にも板状部材を全面にわたって均一に加熱することが
できる。(1) The heating temperature distribution characteristic of the plate-shaped member by the heater provided opposite to the plate-shaped member is such that the temperature is higher in the peripheral part than in the center of the plate-shaped member. Even when heat dissipation in the peripheral area is high and heating efficiency is low, the plate member can be heated uniformly over the entire surface.
（２）板状部材として半導体ウェーハを加熱する場合に
もウェーハの全面均一加熱を可能にしているので、高温
高速加熱を行なった場合にも全面の均一加熱を可能とし
、熱応力にょる結晶欠陥の発生を防止して特性の安定什
や向上を達成でき歩留向上を図れる。(2) Even when heating a semiconductor wafer as a plate-shaped member, it is possible to uniformly heat the entire surface of the wafer, so even when high-temperature and high-speed heating is performed, it is possible to uniformly heat the entire surface of the wafer. It is possible to prevent the occurrence of this problem, stabilize or improve the characteristics, and improve the yield.
（３１ウェーハの高温高速加熱を可能にすることにより
、不純物分布の再分布を防Ｊ）シて浅い接合の形成を可
能にし、装置の高密度化が達成できる。(By enabling high-temperature, high-speed heating of the 31 wafer, redistribution of impurity distribution is prevented), shallow junctions can be formed, and high density of the device can be achieved.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実ｆ、＜（。The invention made by the present inventor has been specifically explained above based on the examples, but the present invention is based on the above-mentioned actual f, <(.
例に限定されるものではなく、その要旨を逸脱しない範
囲で種々変′更可能であることはいうまでもない。たと
えば、ヒータはグラファイト以外の他の材質のものを用
いても良い。It goes without saying that the invention is not limited to the examples, and that various changes can be made without departing from the gist thereof. For example, the heater may be made of a material other than graphite.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野の半導体ウェーハの加熱技
術に適用した場合について説明したが、それに限定され
るものではなく、他の分野における板状部材の加熱装置
としても適用できる。In the above explanation, the invention made by the present inventor was mainly applied to the application field of semiconductor wafer heating technology, which is the background of the invention. It can also be used as a heating device.
第１図は加熱装置の斜視構成図、
第２図は本発明の一実施例である加熱装置の主要部の斜
視図。
第３図はその作用を説明するための側面図、第４図ない
し第８図は夫々異なる本発明の実施例である加熱装置の
要部の斜視図である。
１・・・ウェーハ（板状部材）、１ａ・・・周辺部、］
ｂ・・・中心部、４・・・ヒータ、６・・・グラファイ
ト、６ａ周辺部、６ｂ・・・中心部、７・・・ヒータ、
８・・・グラファイト、８ａ・・・狭幅部、８ｂ・・・
他の部位（大幅部Ｘ９・・・ヒータ、９ａ・・・周辺部
（狭幅）、９ｂ・・・中心部（大幅）、１０・・・ヒー
タ、１１〜１４・・・グラファイト、１５・・・ヒータ
、１６．１７・・・グラファイト、１８・・・グラファ
イト、１９・・・遮熱板、２ｏ・・・ヒータら
第 １ 図
第゛２図
第 ３ 図
す
第 ５ 図
第 ６ｒｇ１FIG. 1 is a perspective configuration diagram of a heating device, and FIG. 2 is a perspective view of main parts of a heating device that is an embodiment of the present invention. FIG. 3 is a side view for explaining its operation, and FIGS. 4 to 8 are perspective views of essential parts of heating devices that are different embodiments of the present invention. 1... Wafer (plate-shaped member), 1a... Peripheral part,]
b...center, 4...heater, 6...graphite, 6a peripheral area, 6b...center, 7...heater,
8...Graphite, 8a...Narrow width part, 8b...
Other parts (wide part・Heater, 16.17...Graphite, 18...Graphite, 19...Heat shield plate, 2o...Heater etc. Figure 1, Figure 2, Figure 3, Figure 5, Figure 6rg1
Claims (1)
輻射熱によって板状部材を加熱するよさにした加熱装置
において、前記ヒータは前記板状部材に対する加熱温度
がその中央部よりも周辺部において高温にされる加熱温
度分布特性となるように各部形状や各部位置を設定した
ことを特徴とする加熱装置。 ２、ヒータの中心部を周辺部よりも板状部材から遠い位
置に設定してなる特許請求の範囲第１項記載の加熱装置
。 ３、ヒータの中心部を周辺部よりも大幅に形成して中心
部の輻射効率を周辺部よりも低くしてなる特許請求の範
囲第１項記載の加熱装置。 ４、ヒータは中心部と周辺部とで分割形設し、ヒータの
中心部よりも周辺部の温度が高くなるように制御し得る
特許請求の範囲第１項記載の加熱装置。 ５、板状部材は前記ヒータに対向配置した反射板上に支
持してなる特許請求の範囲第１項ないし第４項のいずれ
かに記載の加熱装置。[Scope of Claims] 1. A heating device in which a heater is disposed opposite to a plate-shaped member and the plate-shaped member is heated mainly by radiant heat of the heater, wherein the heater has a temperature at which the plate-shaped member is heated. A heating device characterized in that the shape and position of each part are set so that a heating temperature distribution characteristic is such that a peripheral part is heated to a higher temperature than a central part. 2. The heating device according to claim 1, wherein the center of the heater is set farther from the plate member than the peripheral portion. 3. The heating device according to claim 1, wherein the central part of the heater is formed to be larger than the peripheral part, so that the radiation efficiency of the central part is lower than that of the peripheral part. 4. The heating device according to claim 1, wherein the heater is divided into a central portion and a peripheral portion, and the temperature of the peripheral portion of the heater is controlled to be higher than that of the central portion. 5. The heating device according to any one of claims 1 to 4, wherein the plate-like member is supported on a reflecting plate placed opposite to the heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22991783A JPS60123025A (en) | 1983-12-07 | 1983-12-07 | Heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22991783A JPS60123025A (en) | 1983-12-07 | 1983-12-07 | Heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60123025A true JPS60123025A (en) | 1985-07-01 |
Family
ID=16899760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22991783A Pending JPS60123025A (en) | 1983-12-07 | 1983-12-07 | Heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60123025A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208586A (en) * | 1986-03-08 | 1987-09-12 | 東京エレクトロン相模株式会社 | Heater |
| JPH03108323A (en) * | 1989-09-19 | 1991-05-08 | Watkins Johnson Co | Heating method for heater assembly and substrate |
| US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
| JP2016134246A (en) * | 2015-01-16 | 2016-07-25 | Tdk株式会社 | Heater device and physical quantity detection apparatus |
| JP2016156623A (en) * | 2015-02-23 | 2016-09-01 | Tdk株式会社 | Sensor element |
-
1983
- 1983-12-07 JP JP22991783A patent/JPS60123025A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208586A (en) * | 1986-03-08 | 1987-09-12 | 東京エレクトロン相模株式会社 | Heater |
| JPH03108323A (en) * | 1989-09-19 | 1991-05-08 | Watkins Johnson Co | Heating method for heater assembly and substrate |
| JPH0652722B2 (en) * | 1989-09-19 | 1994-07-06 | ワトキンズ―ジョンソン カンパニー | Heater assembly and substrate heating method |
| US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
| JP2016134246A (en) * | 2015-01-16 | 2016-07-25 | Tdk株式会社 | Heater device and physical quantity detection apparatus |
| JP2016156623A (en) * | 2015-02-23 | 2016-09-01 | Tdk株式会社 | Sensor element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4101759A (en) | Semiconductor body heater | |
| US4560420A (en) | Method for reducing temperature variations across a semiconductor wafer during heating | |
| EP0448346B1 (en) | Vapor-phase deposition apparatus | |
| US5239614A (en) | Substrate heating method utilizing heating element control to achieve horizontal temperature gradient | |
| US4535227A (en) | Method for heating semiconductor wafer by means of application of radiated light | |
| JP3469942B2 (en) | Method and apparatus for cooling rectangular substrate | |
| US4504730A (en) | Method for heating semiconductor wafer by means of application of radiated light | |
| JPS60123025A (en) | Heating device | |
| CN113707579A (en) | Semiconductor processing equipment and control method thereof | |
| KR100250636B1 (en) | Round type heating plate of heating chamber for fabricating semiconductor device | |
| JP2002146540A (en) | Substrate heater | |
| JP2007012846A (en) | Photoirradiation type heating device and method therefor | |
| KR20020011793A (en) | wide area heating module for fabricating semiconductor device | |
| JPS61267317A (en) | Boat for vertical type diffusion furnace | |
| JP2000260720A (en) | Apparatus for manufacturing semiconductor | |
| JPH08148437A (en) | Vacuum treatment device | |
| JPH11302853A (en) | Substrate heating member | |
| JPH0555145A (en) | Substrate heater | |
| JPS60116778A (en) | Chemical deposition and device | |
| JPH04713A (en) | Heating apparatus for substrate | |
| JP6210382B2 (en) | Epitaxial growth equipment | |
| JPH036018A (en) | Lamp annealing apparatus for semiconductor device manufacture | |
| JPS63241921A (en) | Substrate heating device for molecular beam epitaxy system | |
| JPH10284569A (en) | Wafer conveyer | |
| WO2022264729A1 (en) | Ceramic heater and holding member |