JP2013157390A - Wiring board and electronic apparatus - Google Patents

Wiring board and electronic apparatus Download PDF

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JP2013157390A
JP2013157390A JP2012015411A JP2012015411A JP2013157390A JP 2013157390 A JP2013157390 A JP 2013157390A JP 2012015411 A JP2012015411 A JP 2012015411A JP 2012015411 A JP2012015411 A JP 2012015411A JP 2013157390 A JP2013157390 A JP 2013157390A
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terminal
wiring
layer
cut
protective layer
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JP5806137B2 (en
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Mitsuhiko Nozuma
光彦 野妻
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Kyocera Corp
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Kyocera Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a wiring board which has reduced residual strain remaining in a protection layer of a terminal formed by thin films and high connection reliability such that the terminal is not likely to separate from an insulation substrate.SOLUTION: In a wiring board, each of a terminal 2 and wiring 3 includes a base metal layer 4, a main conductor layer 5 and a protection layer 6 from bottom on an insulation substrate 1. At a connection part of the wiring 3 with the terminal 2, a cut line 9 across the wiring 3 in a width direction is formed in the protection layer 6. Because residual strain remaining in the protection layer 6 can be reduced by the cut line 9, the wiring board having high connection reliability such that the terminal 2 is not likely to separate from the insulation substrate 1 can be obtained.

Description

本発明は、薄膜配線を有する、発光素子搭載用や定電圧ダイオード等の電子部品搭載用の配線基板および電子装置に関する。   The present invention relates to a wiring board and an electronic device for mounting an electronic component such as a light emitting element or a constant voltage diode having thin film wiring.

従来、セラミック等の絶縁基板における配線パターンの形成にあたっては、グリーンシート表面に高融点金属の導体ペーストをスクリーン印刷法等により厚膜印刷した後に焼成する厚膜方法が採用されていた。近年、セラミック等の配線基板は配線パターンの高密度化および寸法精度の向上が要求されてきていることから、絶縁基板の上面に形成される配線等の導体形成をイオンプレーティング法やスパッタ法や蒸着法等の薄膜方法で行う薄膜配線基板が採用されてきている。この薄膜配線の層構成は、絶縁基板の上面に下地金属層、主導体層を順次積層したものであった(例えば、特許文献1を参照)。   Conventionally, when forming a wiring pattern on an insulating substrate such as a ceramic, a thick film method in which a high melting point metal conductive paste is printed on the surface of a green sheet by a thick film printing method or the like and then fired is employed. In recent years, since wiring boards such as ceramics have been required to have high density wiring patterns and improved dimensional accuracy, conductors such as wiring formed on the upper surface of an insulating substrate are formed by ion plating, sputtering, A thin film wiring substrate that is formed by a thin film method such as a vapor deposition method has been adopted. The layer configuration of the thin film wiring is such that a base metal layer and a main conductor layer are sequentially laminated on the upper surface of an insulating substrate (see, for example, Patent Document 1).

このような薄膜配線基板にLED等の発光素子を搭載して自動車のヘッドライトや街路灯用の用途として用いた場合には、配線には高い防錆信頼性が要求される。その際、主導体層に電気抵抗を低くするための低抵抗の銅を用いた場合には、この銅の腐食を防止するための腐食防止用の保護層(例えばニッケル層)を主導体層(銅)の表面に形成し、保護層の厚みを厚くして防錆性を向上させていた。   When a light emitting element such as an LED is mounted on such a thin film wiring board and used as a headlight or a street light for an automobile, the wiring is required to have high rust prevention reliability. At that time, when using low resistance copper for lowering the electrical resistance for the main conductor layer, a protection layer (for example, nickel layer) for preventing corrosion of the copper is applied to the main conductor layer (for example, nickel layer). The thickness of the protective layer is increased to improve rust prevention.

特開昭64−11394号公報Japanese Unexamined Patent Publication No. 64-11394

しかしながら、従来の配線基板のように、保護層の厚みが厚くなると、防錆性は向上するものの、保護層に残留する残留応力により下地金属層の絶縁基板に対する接続強度低下が発生し易くなるという問題があった。さらに、発光素子等の発熱する素子を端子に搭載すると、端子に熱応力が発生し、この熱応力と上述した保護層の残留応力とが相まって、端子が剥がれやすくなるという問題があった。   However, as the thickness of the protective layer is increased as in the case of the conventional wiring board, the rust prevention is improved, but the residual strength remaining in the protective layer is liable to cause a decrease in the connection strength of the base metal layer to the insulating substrate. There was a problem. Furthermore, when a heat generating element such as a light emitting element is mounted on the terminal, a thermal stress is generated in the terminal, and there is a problem that the thermal stress and the residual stress of the protective layer described above are combined and the terminal is easily peeled off.

本発明は上記課題を解決するためになされたものであり、その目的は、応力が低減され、端子の剥がれが抑制された配線基板および電子装置を提供することにある。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a wiring board and an electronic device in which stress is reduced and peeling of terminals is suppressed.

本発明の配線基板の第1の形態は、絶縁基板と、該絶縁基板の主面に形成された端子と、該端子に接続され前記絶縁基板の前記主面上に延びる配線とを備える配線基板であって、前記端子および前記配線は前記絶縁基板上に下から順に下地金属層、主導体層、保護層を備えており、前記配線の前記端子との接続部において前記配線の幅方向に渡って前記保護層に切れ目が形成されていることを特徴とするものである。   According to a first aspect of the present invention, there is provided a wiring board comprising: an insulating substrate; a terminal formed on the main surface of the insulating substrate; and a wiring connected to the terminal and extending on the main surface of the insulating substrate. The terminal and the wiring are provided with a base metal layer, a main conductor layer, and a protective layer in order from the bottom on the insulating substrate, and extend in the width direction of the wiring at the connection portion of the wiring with the terminal. The protective layer is formed with a cut.

本発明の配線基板の第2の形態は、絶縁基板と、該絶縁基板の主面に形成された端子と、該端子に接続され前記絶縁基板の前記主面上に延びる配線とを備える配線基板であって、前記端子および前記配線は前記絶縁基板上に下から順に下地金属層、主導体層、保護層を備えており、前記端子を平面視で複数の領域に分割するように前記保護層に切れ目が形成されていることを特徴とするものである。   According to a second aspect of the present invention, there is provided a wiring board comprising: an insulating substrate; a terminal formed on the main surface of the insulating substrate; and a wiring connected to the terminal and extending on the main surface of the insulating substrate. The terminal and the wiring include a base metal layer, a main conductor layer, and a protective layer in order from the bottom on the insulating substrate, and the protective layer is divided into a plurality of regions in plan view. It is characterized in that a cut is formed.

本発明の電子装置は、上記構成の本発明の配線基板と、前記端子に接続された電子部品とを具備することを特徴とするものである。   An electronic device of the present invention comprises the wiring board of the present invention having the above-described configuration and an electronic component connected to the terminal.

本発明の配線基板の第1の形態によれば、端子および配線は絶縁基板上に下から順に下地金属層、主導体層、保護層を備えており、配線の端子との接続部において配線の幅方向に渡って保護層に切れ目が形成されていることから、切れ目によって端子部分の保護層に残留した残留応力を低減させることができるので、下地金属層に加わる応力が低減され、端子が絶縁基板から剥離し難い高い接続信頼性を有する配線基板とすることができる。   According to the first form of the wiring board of the present invention, the terminal and the wiring are provided with the base metal layer, the main conductor layer, and the protective layer in order from the bottom on the insulating substrate, and the wiring of the wiring is connected to the terminal of the wiring. Since the cut is formed in the protective layer across the width direction, the residual stress remaining in the protective layer of the terminal portion due to the cut can be reduced, so the stress applied to the base metal layer is reduced and the terminal is insulated. It can be set as the wiring board which has the high connection reliability which is hard to peel from a board | substrate.

本発明の配線基板の第2の形態によれば、端子および配線は絶縁基板上に下から順に下地金属層、主導体層、保護層を備えており、端子を平面視で複数に分割するように保護層に切れ目が形成されていることから、切れ目によって端子の保護層を分割することで、保護層の残留応力を低減させることができ、その結果、下地金属層に加わる応力が低減され、端子が絶縁基板から剥離し難い高い接続信頼性を有する配線基板とすることができる。   According to the second form of the wiring board of the present invention, the terminal and the wiring are provided with the base metal layer, the main conductor layer, and the protective layer in order from the bottom on the insulating substrate, and the terminal is divided into a plurality in plan view. Since the cut is formed in the protective layer, the residual stress of the protective layer can be reduced by dividing the protective layer of the terminal by the cut, and as a result, the stress applied to the base metal layer is reduced, It can be set as the wiring board which has the high connection reliability which a terminal does not peel easily from an insulating substrate.

本発明の電子装置によれば、上記構成の本発明の配線基板と、端子に接続された電子部品とを具備することから、下地金属層に加わる応力が低減され、端子や配線が絶縁基板から剥離し難い高い接続信頼性を有する電子装置とすることができる。   According to the electronic device of the present invention, since the wiring board of the present invention having the above-described configuration and the electronic component connected to the terminal are provided, the stress applied to the base metal layer is reduced, and the terminal and the wiring are separated from the insulating substrate. An electronic device having high connection reliability that is difficult to peel off can be obtained.

(a)は、本発明の配線基板の第1の実施形態を示す上面図であり、(b)は、(a)のA部を拡大して示す要部拡大上面図である。(A) is a top view which shows 1st Embodiment of the wiring board of this invention, (b) is a principal part enlarged top view which expands and shows the A section of (a). (a)〜(c)は、本発明の配線基板の第1の実施形態の他の例を示す要部拡大上面図である。(A)-(c) is a principal part enlarged top view which shows the other example of 1st Embodiment of the wiring board of this invention. (a)〜(c)は、本発明の配線基板の切れ目近傍における断面図である。(A)-(c) is sectional drawing in the cut | interruption vicinity of the wiring board of this invention. (a)〜(c)は、本発明の配線基板の第2の実施形態を示す要部拡大上面図である。(A)-(c) is a principal part enlarged top view which shows 2nd Embodiment of the wiring board of this invention.

本発明の配線基板および電子装置について、添付の図面を参照しつつ詳細に説明する。図1(a)は、本発明の配線基板の第1の実施形態の一例を示す上面図であり、図1(b)は、図1(a)のA部を拡大して示す要部拡大上面図である。図1に示す例では、絶縁基板1の主面に端子2が形成され、該端子2に接続された配線3が、絶縁基板1の主面上に延びている配線基板の例を示している。   The wiring board and electronic device of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1A is a top view showing an example of a first embodiment of a wiring board according to the present invention, and FIG. 1B is an enlarged view of a main part showing an A portion of FIG. It is a top view. In the example shown in FIG. 1, a terminal 2 is formed on the main surface of the insulating substrate 1, and an example of a wiring substrate in which the wiring 3 connected to the terminal 2 extends on the main surface of the insulating substrate 1 is shown. .

本発明の配線基板の第1の実施形態は、図1(a),(b)に示す例のように、絶縁基板1と、該絶縁基板1の主面に形成された端子2と、該端子2に接続され絶縁基板1の主面上に延びる配線3とを備える。端子2および配線3は絶縁基板1上に下から順に下地金属層4、主導体層5、保護層6を備えており、配線3の端子2との接続部において配線3の幅方向に渡って保護層6に切れ目9が形成されている。このような構成により、配線基板の腐食防止のために保護層6を厚くして、下地金属層4に加わる応力が大きくなり易い配線基板においても、切れ目9によって端子2部分の保護層6に残留した残留応力を低減させることができるので、下地金属層4に加わる応力が低減され、端子2が絶縁基板1から剥離し難い高い接続信頼性を有する配線基板とすることができる。すなわち、保護層6に切れ目9が形成されていることで端子2から連続した保護層6の長さが短くなって、端子2部分の保護層6に内在した残留応力が小さくなる。なお、配線3の端子2との接続部とは、配線3と端子2との境界部分だけでなく、境界近傍の配線3を含むものであり、例えば配線3の境界から1.5mmまでの領域である。   As shown in FIGS. 1A and 1B, the first embodiment of the wiring board of the present invention includes an insulating substrate 1, terminals 2 formed on the main surface of the insulating substrate 1, Wiring 3 connected to the terminal 2 and extending on the main surface of the insulating substrate 1. The terminal 2 and the wiring 3 are provided with a base metal layer 4, a main conductor layer 5, and a protective layer 6 in order from the bottom on the insulating substrate 1, and across the width direction of the wiring 3 at the connection portion of the wiring 3 with the terminal 2. A cut 9 is formed in the protective layer 6. With such a configuration, the protective layer 6 is thickened to prevent corrosion of the wiring board, and even in the wiring board where the stress applied to the base metal layer 4 is likely to increase, it remains in the protective layer 6 in the terminal 2 portion due to the break 9. Since the residual stress can be reduced, the stress applied to the base metal layer 4 is reduced, and the wiring board having high connection reliability in which the terminal 2 is difficult to peel off from the insulating substrate 1 can be obtained. That is, since the cut 9 is formed in the protective layer 6, the length of the protective layer 6 continuous from the terminal 2 is shortened, and the residual stress inherent in the protective layer 6 in the terminal 2 portion is reduced. The connection portion of the wiring 3 with the terminal 2 includes not only the boundary portion between the wiring 3 and the terminal 2 but also the wiring 3 in the vicinity of the boundary. For example, in a region from the boundary of the wiring 3 to 1.5 mm. is there.

図1(b)に示す例は、切れ目9が配線3の幅方向に渡って連続した溝状に形成されているものである。これに対して、図2(a),(b)に示す例は、複数の切れ目が間隔を
あけて配線3の幅方向に配列されて形成され、ミシン目状の切れ目9となっているものである。切れ目9が図1(b)に示す例のように、連続した溝状である場合が保護層6の残留応力を最も低下させることができるので好ましいが、切れ目9が図2(a),(b)に
示す例のように、ミシン目状である場合であっても同様に残留応力を低減することができる。この場合は、配線3の幅に対する複数の切れ目9の長さの合計の割合が50%以上であるのがよい。また、この場合は切れ目9によって保護層6が薄くなる部分が少なく、分断されているので、保護層6の薄くなった部分のピンホール等から主導体層5が腐食したとしても、腐食が広がり難いものとすることができる。
In the example shown in FIG. 1B, the cut 9 is formed in a continuous groove shape across the width direction of the wiring 3. On the other hand, in the example shown in FIGS. 2A and 2B, a plurality of cuts are formed in the width direction of the wiring 3 at intervals, forming a perforated cut 9. It is. The case where the cut 9 is a continuous groove as in the example shown in FIG. 1 (b) is preferable because the residual stress of the protective layer 6 can be reduced most, but the cut 9 is shown in FIGS. As in the example shown in b), the residual stress can be similarly reduced even in the case of perforations. In this case, the ratio of the total length of the plurality of cuts 9 to the width of the wiring 3 is preferably 50% or more. Also, in this case, the protective layer 6 is thinned by the cuts 9, and the portion is divided, so that even if the main conductor layer 5 corrodes from a pinhole or the like of the thinned portion of the protective layer 6, the corrosion spreads. It can be difficult.

切れ目9の平面視の形状は、溝状の場合であれば図1(b)に示す例のように直線状であってもよいし、図2(c)に示す例のような楕円形状や円形状の複数の切れ目が連なったような形状であってもよい。図2(c)に示す例のように、複数の切れ目9が連続してつながっている場合は、切れ目9の間の保護層6の部分は厚く残っており、且つ一旦溶融しているので、保護層6の残留応力は効果的に低減され、且つ腐食に対しては、もし発生したとしても広がり難くなるのでより好ましい。   If the shape of the cut 9 in plan view is a groove shape, it may be linear as in the example shown in FIG. 1B, or may be elliptical as in the example shown in FIG. A shape in which a plurality of circular cuts are connected may be used. As in the example shown in FIG. 2 (c), when a plurality of cuts 9 are connected continuously, the portion of the protective layer 6 between the cuts 9 remains thick, and once melted, The residual stress of the protective layer 6 is effectively reduced, and it is more preferable for corrosion because it hardly spreads even if it occurs.

また、ミシン目状の場合の個々の切れ目9の形状は特に制限はなく、図2(a)に示す例のような長方形状であってもよいし、図2(b)に示す例のように円形状であってもよく、その他の菱形,台形状,三角形状や六角形状等の多角形状であってもよい。   In addition, the shape of each cut 9 in the case of a perforation is not particularly limited, and may be a rectangular shape as in the example shown in FIG. 2A, or as in the example shown in FIG. Alternatively, it may be circular, or may be other rhombuses, trapezoids, triangles or hexagons.

図3(a)〜(c)に示す例は、切れ目9の深さおよび深さ方向における形成位置を示す例である。図3(a)に示す例は、切れ目9が保護層6の厚みと同じ深さに形成されており、保護層6の下に形成されている主導体層5が露出しているものである。   The example shown to Fig.3 (a)-(c) is an example which shows the formation position in the depth of the cut | interruption 9, and a depth direction. In the example shown in FIG. 3A, the cut 9 is formed to the same depth as the thickness of the protective layer 6, and the main conductor layer 5 formed under the protective layer 6 is exposed. .

図3(b)〜(c)に示す例のように、切れ目9は主導体層5が露出しないように形成すると、主導体層5が腐食するのを抑えることができるので好ましい。この場合の保護層6の厚みは、5μm程度であれば主導体層5の腐食を抑えることができる。また、この場合の切れ目9の位置は図3(b)に示す例のように主導体層5とは反対側であってもよいし、図3(c)に示す例のように主導体層5側であってもよいが、図3(b)に示す例のように主導体層5とは反対側の方が、形成が容易で残りの保護層6の厚みの制御も容易である。   As in the example shown in FIGS. 3B to 3C, it is preferable to form the cut 9 so that the main conductor layer 5 is not exposed, because the main conductor layer 5 can be prevented from corroding. In this case, if the thickness of the protective layer 6 is about 5 μm, corrosion of the main conductor layer 5 can be suppressed. Further, the position of the cut 9 in this case may be on the opposite side to the main conductor layer 5 as in the example shown in FIG. 3B, or the main conductor layer as in the example shown in FIG. However, it is easier to form and to control the thickness of the remaining protective layer 6 on the side opposite to the main conductor layer 5 as in the example shown in FIG.

絶縁基板1は複数の絶縁層からなり、該絶縁層は、例えば酸化アルミニウム(アルミナ:Al)質焼結体,窒化アルミニウム(AlN)質焼結体,炭化珪素(SiC)質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックスからなる。例えば、絶縁層が酸化アルミニウム質焼結体で形成される場合には、まず、酸化アルミニウム,酸化珪素,酸化マグネシウムおよび酸化カルシウムの原材料粉末に適当な有機バインダおよび溶媒を添加混合して泥漿状となすとともに、これをドクターブレード法等によってシート状に成形し、絶縁層となる複数のセラミックグリーンシートを作製する。そして、これらセラミックグリーンシートを重ね合わせて加熱圧着して積層体を作製し、この積層体を1500℃〜1600℃程度の高温で焼成することによって絶縁基板1が作製される。 The insulating substrate 1 includes a plurality of insulating layers, and the insulating layer includes, for example, an aluminum oxide (alumina: Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, and a silicon carbide (SiC) sintered body. Body, mullite sintered body, and ceramics such as glass ceramics. For example, when the insulating layer is formed of an aluminum oxide sintered body, first, an appropriate organic binder and solvent are added to and mixed with raw material powders of aluminum oxide, silicon oxide, magnesium oxide and calcium oxide to form a slurry. At the same time, this is formed into a sheet shape by a doctor blade method or the like to produce a plurality of ceramic green sheets to be an insulating layer. Then, these ceramic green sheets are superposed and thermocompression bonded to produce a laminated body, and this laminated body is fired at a high temperature of about 1500 ° C. to 1600 ° C. to produce the insulating substrate 1.

端子2および配線3は、絶縁基板1の上面に、下から順に、下地金属層4、主導体層5、保護層6が形成されてなる。そして、図3(a)〜(c)に示す例のように、保護層6の表面には、拡散防止層7が形成され、さらに、拡散防止層7の表面に表面層8が形成されている。表面層8は、はんだ等の接着材で電子部品を接着するために形成されているもので、例えば、はんだと濡れ性のよいAu(金)からなる。拡散防止層7は、保護層6が厚みの薄いAuの表面層8の表面に拡散することを防ぐためのものである。例えば、保護
層6がAuの表面層8の表面に拡散することを吸収できる程度にまでAuの表面層8の厚みを厚くした場合には拡散防止層7は不要となるが、高コストのAuの表面層8はなるべく薄く形成するため、保護層6とAuの表面層8との間には拡散防止層7を形成することが好ましい。
The terminal 2 and the wiring 3 are formed by forming a base metal layer 4, a main conductor layer 5, and a protective layer 6 in order from the bottom on the upper surface of the insulating substrate 1. 3A to 3C, the diffusion prevention layer 7 is formed on the surface of the protective layer 6, and the surface layer 8 is further formed on the surface of the diffusion prevention layer 7. Yes. The surface layer 8 is formed to adhere an electronic component with an adhesive such as solder, and is made of, for example, Au (gold) having good wettability with solder. The diffusion prevention layer 7 is for preventing the protective layer 6 from diffusing to the surface of the thin Au surface layer 8. For example, when the thickness of the Au surface layer 8 is increased to such an extent that the protective layer 6 can absorb the diffusion to the surface of the Au surface layer 8, the diffusion prevention layer 7 is not required, but the high cost Au In order to form the surface layer 8 as thin as possible, it is preferable to form the diffusion prevention layer 7 between the protective layer 6 and the Au surface layer 8.

下地金属層4は、例えばTi(チタン)またはTiW(チタンタングステン)等のTi合金から成り、その厚みは例えば0.01〜0.5μmである。主導体層5は、例えばCu(銅
)から成り、その厚みは例えば1.0〜100.0μmである。保護層6は、例えばNi(ニッケル)から成り、その厚みは例えば0.5〜10.0μmである。さらに拡散防止層7は、例えば
Pd(パラジウム)から成り、その厚みは例えば0.1〜1.0μmである。例えば、主導体層5に低抵抗のCuを用いると、配線の抵抗を低くすることができるとともに、保護層のNiによる応力をCuによって緩和することができる。
The base metal layer 4 is made of, for example, a Ti alloy such as Ti (titanium) or TiW (titanium tungsten), and has a thickness of, for example, 0.01 to 0.5 μm. The main conductor layer 5 is made of, for example, Cu (copper) and has a thickness of, for example, 1.0 to 100.0 μm. The protective layer 6 is made of, for example, Ni (nickel) and has a thickness of, for example, 0.5 to 10.0 μm. Further, the diffusion preventing layer 7 is made of, for example, Pd (palladium) and has a thickness of, for example, 0.1 to 1.0 μm. For example, when low resistance Cu is used for the main conductor layer 5, the resistance of the wiring can be lowered, and the stress due to Ni of the protective layer can be relieved by Cu.

端子2および配線3は、例えばイオンプレーティング法、スパッタ法、蒸着法等の従来周知の薄膜形成方法を用いて形成される。例えば、絶縁基板1の表面にイオンプレーティ
ング法、スパッタ法、蒸着法等により、下地金属層4、主導体層5の一部となるCuを成膜する。その後、DFR(ドライフィルムレジスト)を使ったフォトリソグラフィ法により端子2、配線3の反転パターンを形成する。その後、電解Cuめっきにより、主導体層5を形成し、DFRを除去する。その後、端子2、配線3以外の主導体層の一部のCuおよび下地金属層4をウェットエッチング法を用いて除去し、電解めっきあるいは無電解めっき法により、保護層6および拡散防止層7ならびに表面層8を形成する。
The terminal 2 and the wiring 3 are formed by using a conventionally well-known thin film forming method such as an ion plating method, a sputtering method, or a vapor deposition method. For example, Cu serving as a part of the base metal layer 4 and the main conductor layer 5 is formed on the surface of the insulating substrate 1 by ion plating, sputtering, vapor deposition, or the like. Thereafter, a reversal pattern of the terminal 2 and the wiring 3 is formed by a photolithography method using DFR (dry film resist). Thereafter, the main conductor layer 5 is formed by electrolytic Cu plating, and the DFR is removed. Thereafter, a part of the Cu and the underlying metal layer 4 other than the terminal 2 and the wiring 3 are removed using a wet etching method, and the protective layer 6 and the diffusion preventing layer 7 and the electroless plating method are used. The surface layer 8 is formed.

切れ目9は、例えばYAGレーザー(ヤグレーザー)等のレーザー照射によって形成される。切れ目9をレーザー照射によって形成すると、一旦切れ目9近傍の保護層6が溶融し、再度固化して緻密な金属になるので、保護層6が薄くなっても、腐食防止の効果は低下し難いものとなる。また、レーザー照射で切れ目9近傍の保護層6が一旦溶融することでも残留応力が開放されることになるので応力緩和の方法として好ましい。さらに、レーザー照射で切れ目9を形成すると、切れ目9の近傍の保護層6表面は酸化してはんだ濡れが悪くなり、はんだの流れ止めとしても機能するようになるので、はんだダム等を形成する必要が無くなり好ましい。   The cut 9 is formed by laser irradiation such as a YAG laser (yag laser). When the cut 9 is formed by laser irradiation, the protective layer 6 near the cut 9 is once melted and solidified again to become a dense metal. Therefore, even if the protective layer 6 is thinned, the effect of preventing corrosion is unlikely to be reduced. It becomes. Moreover, since the residual stress is released even when the protective layer 6 near the cut 9 is once melted by laser irradiation, it is preferable as a stress relaxation method. Further, when the cut 9 is formed by laser irradiation, the surface of the protective layer 6 near the cut 9 is oxidized and the solder wettability is deteriorated, so that it also functions as a solder flow stop. Therefore, it is necessary to form a solder dam or the like. Is preferred.

例えば、レーザー照射の中でもYAGレーザーを用いて切れ目9を形成する場合は、金属のレーザー吸収率はYAGレーザーの波長によって異なり、Niからなる保護層6とCuからなる主導体層5とではYAGレーザーのレーザー吸収率が異なるものとなる。例えば基本波長1064μmのYAGレーザーでは、YAGレーザーの出力を調節することで、レーザー吸収率が30%のNiは溶融され蒸発飛散されるものの、保護層6の下の主導体層5のCuは、レーザー吸収率が10%以下で溶融飛散されないものとなる。これにより、主導体層5はYAGレーザーにより溶融飛散されず、主導体層5には切れ目9が形成されないので、抵抗値に変化がないものとなる。   For example, when the cut 9 is formed using a YAG laser even during laser irradiation, the laser absorption rate of the metal varies depending on the wavelength of the YAG laser, and the YAG laser is used in the protective layer 6 made of Ni and the main conductor layer 5 made of Cu. The laser absorption rate is different. For example, in a YAG laser with a fundamental wavelength of 1064 μm, by adjusting the output of the YAG laser, Ni with a laser absorption rate of 30% is melted and evaporated, but the Cu of the main conductor layer 5 under the protective layer 6 is Laser absorptivity is 10% or less so that it is not melted and scattered. As a result, the main conductor layer 5 is not melted and scattered by the YAG laser, and the cut 9 is not formed in the main conductor layer 5, so that the resistance value does not change.

切れ目9を、図1(b)に示す例のように溝状に形成する場合は、例えば基本波長が1064μmのYAGレーザーを用いて、15〜30kHzの周波数、10〜20Aの出力で0.1〜5.0mm/秒程度の走査速度で走査しながら連続してレーザー照射することにより形成することができる。また切れ目9を、図2(a)〜(c)に示す例のように複数の切れ目9として形成する場合は、同様の条件で走査しながら断続的にレーザー照射することにより形成することができる。   When the cut 9 is formed in a groove shape as in the example shown in FIG. 1B, for example, a YAG laser having a fundamental wavelength of 1064 μm is used, and a frequency of 15 to 30 kHz and an output of 10 to 20 A is 0.1 to 5.0. It can be formed by continuous laser irradiation while scanning at a scanning speed of about mm / second. Moreover, when forming the cut | interruption 9 as several cut | interruption 9 like the example shown to Fig.2 (a)-(c), it can form by irradiating a laser intermittently, scanning on the same conditions. .

また、切れ目9の形状を、図3(a)、(b)、(c)に示す例の各々の形状となるようにするには、保護層6と主導体層5の金属の種類や厚み、レーザーの周波数、出力、レーザー照射時間等を調節することで作製することができる。図3(a)、(b)に示す例
の切れ目9は、上述した波長のYAGレーザーで、上述した周波数、出力、レーザー照射時間を調節して形成する。図3(a)に示す例では保護層6の厚み分の全てを蒸発飛散させ、図3(b)に示す例では保護層6の厚みの途中までを蒸発飛散させるとよい。また、図3(c)に示す例では、レーザー照射で保護層6を蒸発飛散させる際、レーザー照射により一旦溶融したできた保護層6が、切れ目9の上部に蓋状に形成され、この蓋状の保護層6により主導体層5が露出することがないものとなる。
Further, in order to make the shape of the cut 9 to be the shape of each of the examples shown in FIGS. 3A, 3B, and 3C, the types and thicknesses of the metal of the protective layer 6 and the main conductor layer 5 are used. It can be produced by adjusting the laser frequency, output, laser irradiation time, and the like. The break 9 in the example shown in FIGS. 3A and 3B is formed by adjusting the above-described frequency, output, and laser irradiation time by the YAG laser having the above-described wavelength. In the example shown in FIG. 3A, it is preferable that all the thickness of the protective layer 6 is evaporated and scattered, and in the example shown in FIG. 3B, the middle part of the thickness of the protective layer 6 is evaporated and scattered. In the example shown in FIG. 3C, when the protective layer 6 is evaporated and scattered by laser irradiation, the protective layer 6 once melted by the laser irradiation is formed in a lid shape on the upper part of the cut 9, and this lid The main conductive layer 5 is not exposed by the protective layer 6 having a shape.

また切れ目9は別の方法で形成してもよい。例えば、主導体層4を形成した後に切れ目9を形成する位置にレジスト膜を形成して保護層6を形成した後にレジストを剥離すると、レジスト膜を形成した位置には保護層6が形成されずに、図3(a)に示す例のような、主導体層5が露出する、保護層6の厚みと同じ深さの切れ目9が形成される。ただし、切れ目9の底に主導体層4が露出しているので、この主導体層4が腐食しないようにコーティングするのが好ましい。このコーティングは、例えば、上述したようにAuの表面層8を電解めっきあるいは無電解めっき法により形成する際、切れ目9の底に露出した主導体層4の表面にもAuが形成されることとなり、これが主導体層4のコーティングとなる。図3(b)に示す例のような切れ目9は、主導体層4を形成してその上に切れ目9と主導体層5との間の厚みの下部の保護層6を形成した後に、切れ目9を形成する位置に、切れ目9の深さ(高さ)のレジスト膜を形成して同様の厚みの上部の保護層6を形成すればよい。   The cut line 9 may be formed by another method. For example, if the resist is peeled after forming the resist film after forming the main conductor layer 4 and forming the protective layer 6 at the position where the cut 9 is formed, the protective layer 6 is not formed at the position where the resist film is formed. In addition, as in the example shown in FIG. 3A, a cut 9 having the same depth as the thickness of the protective layer 6 is formed from which the main conductor layer 5 is exposed. However, since the main conductor layer 4 is exposed at the bottom of the cut 9, it is preferable to coat the main conductor layer 4 so as not to corrode. In this coating, for example, when the Au surface layer 8 is formed by electrolytic plating or electroless plating as described above, Au is also formed on the surface of the main conductor layer 4 exposed at the bottom of the cut 9. This is the coating of the main conductor layer 4. The cut 9 as in the example shown in FIG. 3B is formed after the main conductor layer 4 is formed and the protective layer 6 having a lower thickness between the cut 9 and the main conductor layer 5 is formed thereon. What is necessary is just to form the resist film of the depth (height) of the cut | interruption 9 in the position which forms 9 and form the upper protective layer 6 of the same thickness.

さらに、切れ目9の周辺部は、酸化されていることが好ましい。この場合は、端子2にはんだ等のろう付けによって電子部品を搭載し接続した場合に、はんだの流れが切れ目9で止まるので、改めてはんだダムを形成しなくとも、電子部品の接続にあずかるはんだの厚みが薄くなることを防ぎ、はんだの量を確保できるので、電子部品が剥がれおちることが抑制された接続信頼性の高い配線基板とすることができる。すなわち、切れ目9の周辺部の金属が酸化することで、酸化した部分にははんだが濡れにくくなり、はんだの流れが切れ目9で止まることとなる。酸化はYAGレーザーのように比較的波長の長いレーザーを用いると溝の近傍まで広がり易くなるのではんだダムとしての効果は高くなる。   Furthermore, it is preferable that the peripheral part of the cut 9 is oxidized. In this case, when an electronic component is mounted and connected to the terminal 2 by brazing of solder or the like, the flow of solder stops at the cut line 9, so that the solder of the electronic component connected to the connection of the electronic component does not need to be formed again. Since the thickness can be prevented from being reduced and the amount of solder can be secured, it is possible to provide a wiring board with high connection reliability in which electronic components are prevented from being peeled off. That is, when the metal in the periphery of the cut 9 is oxidized, the solder is less likely to get wet in the oxidized portion, and the flow of solder stops at the cut 9. When a laser having a relatively long wavelength, such as a YAG laser, is used for the oxidation, the effect as a solder dam is enhanced because it easily spreads to the vicinity of the groove.

本発明の配線基板の第2の実施形態は、図4(a)〜(c)に示す例のように、保護層6に形成される切れ目9が、端子2を平面視で複数の領域に分割するように形成されている点において第1の実施形態と異なり、その他の点については同様の構成である。このような構成により、端子2の寸法が大きくなった場合でも、切れ目9によって端子2を複数に分割することで長さが短くなるので、保護層6の残留応力を低減させることができ、その結果、下地金属層4に加わる応力が低減され、端子2が絶縁基板1から剥離し難い高い接続信頼性を有する配線基板とすることができる。   In the second embodiment of the wiring board according to the present invention, as in the example shown in FIGS. 4A to 4C, the cuts 9 formed in the protective layer 6 are formed in a plurality of regions in a plan view of the terminal 2. Unlike the first embodiment in that it is formed so as to be divided, the other points have the same configuration. With such a configuration, even when the dimensions of the terminal 2 are increased, the length of the terminal 2 is shortened by dividing the terminal 2 into a plurality by the cut line 9, so that the residual stress of the protective layer 6 can be reduced. As a result, the stress applied to the base metal layer 4 is reduced, and a wiring board having high connection reliability in which the terminal 2 is difficult to peel from the insulating substrate 1 can be obtained.

図4(a)に示す例は、切れ目9が端子2の周縁部に、端子2の外周に沿った溝状に形成されているものであり、図4(b)示す例は、溝状の切れ目9が、端子2の外辺のそれぞれに沿って端子2の端部まで縦横に形成されているものであり、図4(c)示す例は、図4(a)に示す例の切れ目9がミシン目状に形成されているものである。図4(a)に示す例のように、溝状の切れ目9が端子2の周縁部に形成されている場合は、端子2の内側の残留応力を全周にわたり効果的に緩和することができる。また図4(b)に示す例のように、溝状の切れ目9が端子2の端部まで縦横に形成されている場合は、端子2の内側領域の残留応力と全周にわたり効果的に緩和することができるとともに、端子2の外側領域も分割することで残留応力の大きい外側領域の残留応力もより効果的に低下させることができるので、端子2全体の残留応力をより低下させることができる。図4(b)に示す例のように端子2の平面視の形状が四角形状である場合は、四角形の角部が残留応力が大きくなるので、図4(b)に示す例のように角部領域を小さくするように切れ目9形成すると効果的である。また図4(c)に示す例のように、切れ目9がミシン目状である場合
は、第1の実施の形態の場合と同様に、保護層6の薄くなった部分のピンホール等から主導体層5が腐食したとしても、腐食が広がり難いものとすることができる。
In the example shown in FIG. 4A, the cut 9 is formed in a groove shape along the outer periphery of the terminal 2 at the peripheral portion of the terminal 2, and the example shown in FIG. The cut 9 is formed vertically and horizontally along each of the outer sides of the terminal 2 to the end of the terminal 2, and the example shown in FIG. 4C is the cut 9 of the example shown in FIG. Are formed in perforations. As in the example shown in FIG. 4A, when the groove-like cut 9 is formed in the peripheral portion of the terminal 2, the residual stress inside the terminal 2 can be effectively relieved over the entire circumference. . Further, as in the example shown in FIG. 4B, when the groove-like cut 9 is formed vertically and horizontally to the end of the terminal 2, the residual stress in the inner region of the terminal 2 and the entire circumference are effectively relieved. In addition, by dividing the outer region of the terminal 2, the residual stress in the outer region having a large residual stress can be reduced more effectively, so that the residual stress of the entire terminal 2 can be further reduced. . When the shape of the terminal 2 in plan view is a quadrilateral shape as in the example shown in FIG. 4B, the residual stress increases at the corners of the quadrilateral, so that the corners as in the example shown in FIG. It is effective to form the cut 9 so as to reduce the partial area. Further, as in the example shown in FIG. 4C, when the cut 9 is perforated, it is led from a pinhole or the like of the thinned portion of the protective layer 6 as in the case of the first embodiment. Even if the body layer 5 corrodes, the corrosion can hardly be spread.

切れ目9は、端子2を長さの短い複数の領域に分割するように形成するのであればどのように形成してもよい。切れ目9が多い方が分割された領域の長さが短くなって残留応力を小さくすることができるが、切れ目9を多くし過ぎると端子2に電子部品をはんだ等の接合材で接合する際に、接合され難い部分が増えて接続信頼性が低下してしまう場合もある。よって、少ない切れ目9で効率よく残留応力の低減を図るには、図4(a)〜図4(c)に示す例のように、平面視で内側領域と外側領域とに分けるように、端子2の周縁部に形成するのが好ましい。   The cut 9 may be formed in any way as long as the terminal 2 is formed so as to be divided into a plurality of short regions. When the number of cuts 9 is larger, the length of the divided region is shortened and the residual stress can be reduced. However, when the number of cuts 9 is increased, an electronic component is bonded to the terminal 2 with a bonding material such as solder. In some cases, the number of parts that are difficult to be joined increases and the connection reliability decreases. Therefore, in order to efficiently reduce the residual stress with a small number of cuts 9, as shown in FIGS. 4A to 4C, the terminals are divided into an inner region and an outer region in a plan view. It is preferable to form in the peripheral part of 2.

端子2の内側だけに電子素子や電子部品をろう材で接続したい場合は、切れ目9がレーザー照射によって端子2を外側と内側とに分けるように形成されていると切れ目9の近傍の保護層6表面は酸化してはんだ濡れが悪くなり、はんだの流れ止めとしても機能するようになるのではんだダムを別に形成する必要が無くなり好ましい。   When it is desired to connect an electronic element or an electronic component only to the inside of the terminal 2 with a brazing material, the protective layer 6 in the vicinity of the cut 9 is formed when the cut 9 is formed to divide the terminal 2 into an outer side and an inner side by laser irradiation. The surface is oxidized and the solder wettability is deteriorated, and it also functions as a solder flow stop. Therefore, it is not necessary to separately form a solder dam, which is preferable.

第2の実施形態は、第1の実施形態の構成を組み合わせることでより効果的なものとなる。特に図4(a)および図4(c)のように切れ目9が端子の端部まで形成されていない場合には有効である。   The second embodiment is more effective by combining the configurations of the first embodiment. This is particularly effective when the cut 9 is not formed up to the end of the terminal as shown in FIGS. 4 (a) and 4 (c).

本発明の電子装置は、上記構成の本発明の配線基板と、端子2に接続された電子部品(図示せず)とを具備するものである。このような構成により、下地金属層4に加わる応力が低減され、端子2や配線3が絶縁基板1から剥離し難い高い接続信頼性を有する電子装置とすることができる。   The electronic device of the present invention includes the wiring board of the present invention having the above-described configuration and an electronic component (not shown) connected to the terminal 2. With such a configuration, the stress applied to the base metal layer 4 is reduced, and an electronic device having high connection reliability in which the terminal 2 and the wiring 3 are not easily separated from the insulating substrate 1 can be obtained.

電子部品は、例えば発光素子(LED)等の電子素子や定電圧ダイオード(ツェナーダイオード)等の電子部品であり、これらの電子部品は、例えばろう材等の接着材を介して接続される。   The electronic component is an electronic component such as a light emitting device (LED) or a constant voltage diode (zener diode), and these electronic components are connected via an adhesive such as a brazing material.

1 :絶縁基板
2 :端子
3 :配線
4 :下地金属層
5 :主導体層
6 :保護層
7 :拡散防止層
8 :表面層
9 :切れ目
1: Insulating substrate 2: Terminal 3: Wiring 4: Base metal layer 5: Main conductor layer 6: Protection layer 7: Diffusion prevention layer 8: Surface layer 9: Break

Claims (4)

絶縁基板と、
該絶縁基板の主面に形成された端子と、
該端子に接続され前記絶縁基板の前記主面上に延びる配線と
を備える配線基板であって、
前記端子および前記配線は前記絶縁基板上に下から順に下地金属層、主導体層、保護層を備えており、前記配線の前記端子との接続部において前記配線の幅方向に渡って前記保護層に切れ目が形成されていることを特徴とする配線基板。
An insulating substrate;
Terminals formed on the main surface of the insulating substrate;
A wiring board connected to the terminal and extending on the main surface of the insulating board,
The terminal and the wiring each include a base metal layer, a main conductor layer, and a protective layer in order from the bottom on the insulating substrate, and the protective layer extends in the width direction of the wiring at a connection portion of the wiring with the terminal. A wiring board characterized in that a cut is formed in the wiring board.
絶縁基板と、
該絶縁基板の主面に形成された端子と、
該端子に接続され前記絶縁基板の前記主面上に延びる配線と
を備える配線基板であって、
前記端子および前記配線は前記絶縁基板上に下から順に下地金属層、主導体層、保護層を備えており、前記端子を平面視で複数の領域に分割するように前記保護層に切れ目が形成されていることを特徴とする配線基板。
An insulating substrate;
Terminals formed on the main surface of the insulating substrate;
A wiring board connected to the terminal and extending on the main surface of the insulating board,
The terminal and the wiring include a base metal layer, a main conductor layer, and a protective layer in order from the bottom on the insulating substrate, and a cut is formed in the protective layer so as to divide the terminal into a plurality of regions in plan view. A wiring board characterized by being made.
前記切れ目は、主導体層が露出しないように形成されていることを特徴とする請求項1または請求項2記載の配線基板。 The wiring board according to claim 1, wherein the cut is formed so that the main conductor layer is not exposed. 請求項1乃至請求項3のいずれかに記載の配線基板と、前記端子に接続された電子部品とを具備することを特徴とする電子装置。 An electronic device comprising: the wiring board according to claim 1; and an electronic component connected to the terminal.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141330A (en) * 1986-12-03 1988-06-13 Nec Corp Semiconductor integrated circuit device
JPH07142821A (en) * 1993-11-15 1995-06-02 Matsushita Electric Ind Co Ltd Printed wiring board
JP2001068828A (en) * 1999-08-27 2001-03-16 Ngk Spark Plug Co Ltd Wiring board and its manufacture
JP2004111849A (en) * 2002-09-20 2004-04-08 Ngk Spark Plug Co Ltd Ceramic wiring board, component-mounted wiring board using it, and their manufacturing methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141330A (en) * 1986-12-03 1988-06-13 Nec Corp Semiconductor integrated circuit device
JPH07142821A (en) * 1993-11-15 1995-06-02 Matsushita Electric Ind Co Ltd Printed wiring board
JP2001068828A (en) * 1999-08-27 2001-03-16 Ngk Spark Plug Co Ltd Wiring board and its manufacture
JP2004111849A (en) * 2002-09-20 2004-04-08 Ngk Spark Plug Co Ltd Ceramic wiring board, component-mounted wiring board using it, and their manufacturing methods

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