JP2013139609A5 - - Google Patents
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- JP2013139609A5 JP2013139609A5 JP2012000444A JP2012000444A JP2013139609A5 JP 2013139609 A5 JP2013139609 A5 JP 2013139609A5 JP 2012000444 A JP2012000444 A JP 2012000444A JP 2012000444 A JP2012000444 A JP 2012000444A JP 2013139609 A5 JP2013139609 A5 JP 2013139609A5
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- Prior art keywords
- film
- film thickness
- division cycles
- throughput
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- Prior art date
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Description
また、図５は成膜の際のＴｉＮ膜の分割サイクル数と成膜レートおよび膜厚との関係を示す図であるが、分割サイクル数を増加させていくと、膜厚も成膜レートも低下する傾向にあり、分割サイクル数を増加しすぎるのはスループットの点からも好ましくないといえる。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012000444A JP5872904B2 (ja) | 2012-01-05 | 2012-01-05 | ＴｉＮ膜の成膜方法および記憶媒体 |
| KR1020147021757A KR101739631B1 (ko) | 2012-01-05 | 2012-12-12 | TiN막의 성막 방법 및 기억 매체 |
| PCT/JP2012/082213 WO2013103076A1 (ja) | 2012-01-05 | 2012-12-12 | ＴｉＮ膜の成膜方法および記憶媒体 |
| US14/370,732 US9257278B2 (en) | 2012-01-05 | 2012-12-12 | Method for forming TiN and storage medium |
| TW102100185A TWI613309B (zh) | 2012-01-05 | 2013-01-04 | ＴｉＮ膜之成膜方法及記憶媒體 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012000444A JP5872904B2 (ja) | 2012-01-05 | 2012-01-05 | ＴｉＮ膜の成膜方法および記憶媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013139609A JP2013139609A (ja) | 2013-07-18 |
| JP2013139609A5 true JP2013139609A5 (ja) | 2014-11-27 |
| JP5872904B2 JP5872904B2 (ja) | 2016-03-01 |
Family
ID=48745140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012000444A Active JP5872904B2 (ja) | 2012-01-05 | 2012-01-05 | ＴｉＮ膜の成膜方法および記憶媒体 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9257278B2 (ja) |
| JP (1) | JP5872904B2 (ja) |
| KR (1) | KR101739631B1 (ja) |
| TW (1) | TWI613309B (ja) |
| WO (1) | WO2013103076A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6492736B2 (ja) | 2015-02-17 | 2019-04-03 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに記憶媒体 |
| JP6416031B2 (ja) * | 2015-03-30 | 2018-10-31 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体デバイスの製造方法、基板処理装置およびプログラム |
| JP6436886B2 (ja) * | 2015-09-28 | 2018-12-12 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法及びプログラム |
| WO2017100226A1 (en) * | 2015-12-08 | 2017-06-15 | M-I L.L.C. | Apparatus and method of separation with a pressure differential device |
| US10535527B2 (en) * | 2017-07-13 | 2020-01-14 | Applied Materials, Inc. | Methods for depositing semiconductor films |
| KR102549542B1 (ko) | 2017-09-12 | 2023-06-29 | 삼성전자주식회사 | 금속 하드마스크 및 반도체 소자의 제조 방법 |
| CN110875181A (zh) * | 2018-08-30 | 2020-03-10 | 长鑫存储技术有限公司 | 介电材料层及其形成方法、应用其的半导体结构 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3138892B2 (ja) | 1992-12-17 | 2001-02-26 | 東京エレクトロン株式会社 | 薄膜形成方法及びその装置 |
| US5989999A (en) | 1994-11-14 | 1999-11-23 | Applied Materials, Inc. | Construction of a tantalum nitride film on a semiconductor wafer |
| US6699530B2 (en) * | 1995-07-06 | 2004-03-02 | Applied Materials, Inc. | Method for constructing a film on a semiconductor wafer |
| US6155198A (en) | 1994-11-14 | 2000-12-05 | Applied Materials, Inc. | Apparatus for constructing an oxidized film on a semiconductor wafer |
| US6251758B1 (en) | 1994-11-14 | 2001-06-26 | Applied Materials, Inc. | Construction of a film on a semiconductor wafer |
| KR100218728B1 (ko) * | 1995-11-01 | 1999-09-01 | 김영환 | 반도체 소자의 금속 배선 제조방법 |
| JP3851686B2 (ja) * | 1996-06-08 | 2006-11-29 | キヤノンアネルバ株式会社 | プラズマｃｖｄによる薄膜形成方法 |
| JPH10237662A (ja) * | 1996-12-24 | 1998-09-08 | Sony Corp | 金属膜のプラズマｃｖｄ方法、および金属窒化物膜の形成方法ならびに半導体装置 |
| US6555183B2 (en) * | 1999-06-11 | 2003-04-29 | Applied Materials, Inc. | Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
| JP4178776B2 (ja) | 2001-09-03 | 2008-11-12 | 東京エレクトロン株式会社 | 成膜方法 |
| US20050112876A1 (en) * | 2003-11-26 | 2005-05-26 | Chih-Ta Wu | Method to form a robust TiCI4 based CVD TiN film |
| KR100695887B1 (ko) * | 2004-12-09 | 2007-03-20 | 삼성전자주식회사 | 티타늄질화막 형성 방법 및 상기 티타늄질화막을 이용한금속-절연체-금속 커패시터의 하부전극 형성 방법 |
| US8906471B2 (en) * | 2008-03-28 | 2014-12-09 | Tokyo Electron Limited | Method of depositing metallic film by plasma CVD and storage medium |
| JP5774822B2 (ja) * | 2009-05-25 | 2015-09-09 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
| JP2011103330A (ja) * | 2009-11-10 | 2011-05-26 | Panasonic Corp | 半導体装置の製造方法 |
| US9573806B2 (en) * | 2013-03-11 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS device structure with a capping structure |
-
2012
- 2012-01-05 JP JP2012000444A patent/JP5872904B2/ja active Active
- 2012-12-12 US US14/370,732 patent/US9257278B2/en active Active
- 2012-12-12 KR KR1020147021757A patent/KR101739631B1/ko active IP Right Grant
- 2012-12-12 WO PCT/JP2012/082213 patent/WO2013103076A1/ja active Application Filing
-
2013
- 2013-01-04 TW TW102100185A patent/TWI613309B/zh active
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