JP2013131262A5 - - Google Patents

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Publication number
JP2013131262A5
JP2013131262A5 JP2011278558A JP2011278558A JP2013131262A5 JP 2013131262 A5 JP2013131262 A5 JP 2013131262A5 JP 2011278558 A JP2011278558 A JP 2011278558A JP 2011278558 A JP2011278558 A JP 2011278558A JP 2013131262 A5 JP2013131262 A5 JP 2013131262A5
Authority
JP
Japan
Prior art keywords
bit line
transistor
local bit
local
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011278558A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013131262A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011278558A priority Critical patent/JP2013131262A/ja
Priority claimed from JP2011278558A external-priority patent/JP2013131262A/ja
Priority to US13/714,015 priority patent/US9177619B2/en
Publication of JP2013131262A publication Critical patent/JP2013131262A/ja
Publication of JP2013131262A5 publication Critical patent/JP2013131262A5/ja
Abandoned legal-status Critical Current

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JP2011278558A 2011-12-20 2011-12-20 半導体装置 Abandoned JP2013131262A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011278558A JP2013131262A (ja) 2011-12-20 2011-12-20 半導体装置
US13/714,015 US9177619B2 (en) 2011-12-20 2012-12-13 Semiconductor device having hierarchical bit line structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011278558A JP2013131262A (ja) 2011-12-20 2011-12-20 半導体装置

Publications (2)

Publication Number Publication Date
JP2013131262A JP2013131262A (ja) 2013-07-04
JP2013131262A5 true JP2013131262A5 (enExample) 2014-12-18

Family

ID=48610003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011278558A Abandoned JP2013131262A (ja) 2011-12-20 2011-12-20 半導体装置

Country Status (2)

Country Link
US (1) US9177619B2 (enExample)
JP (1) JP2013131262A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102193885B1 (ko) 2014-01-17 2020-12-22 삼성전자주식회사 감지 증폭기 및 이를 포함하는 메모리 장치
ITUA20161478A1 (it) * 2016-03-09 2017-09-09 St Microelectronics Srl Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile
US9928888B1 (en) * 2016-09-23 2018-03-27 Taiwan Semiconductor Manufacturing Company Limited Low power consumption memory device
US11114446B2 (en) * 2016-12-29 2021-09-07 Intel Corporation SRAM with hierarchical bit lines in monolithic 3D integrated chips
US10062429B1 (en) 2017-04-17 2018-08-28 Intel Corporation System, apparatus and method for segmenting a memory array
KR102381341B1 (ko) 2017-12-18 2022-03-31 삼성전자주식회사 반도체 메모리 장치에서의 비트라인 센스 앰프의 레이아웃 구조
US10783938B2 (en) * 2018-06-29 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM with local bit line, input/output circuit, and global bit line
US10885970B2 (en) * 2018-08-30 2021-01-05 Micron Technology, Inc. Non-linear activation for sensing circuitry
JP2020145344A (ja) * 2019-03-07 2020-09-10 キオクシア株式会社 半導体記憶装置
US12094520B2 (en) * 2021-12-29 2024-09-17 Micron Technology, Inc. Memory device layout with intersecting region between sub-wordline and sense amplifier

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6009024A (en) * 1997-03-27 1999-12-28 Matsushita Electric Industrial Co., Ltd. Semiconductor memory
US6256221B1 (en) * 1998-01-30 2001-07-03 Silicon Aquarius, Inc. Arrays of two-transistor, one-capacitor dynamic random access memory cells with interdigitated bitlines
JP5019579B2 (ja) * 2007-01-18 2012-09-05 株式会社東芝 半導体記憶装置
JP5680819B2 (ja) 2008-08-29 2015-03-04 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． センスアンプ回路及び半導体記憶装置
JP2011034614A (ja) 2009-07-30 2011-02-17 Elpida Memory Inc 半導体装置及びこれを備えるシステム

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