JP2013124907A - Infrared sensor - Google Patents

Infrared sensor Download PDF

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JP2013124907A
JP2013124907A JP2011273208A JP2011273208A JP2013124907A JP 2013124907 A JP2013124907 A JP 2013124907A JP 2011273208 A JP2011273208 A JP 2011273208A JP 2011273208 A JP2011273208 A JP 2011273208A JP 2013124907 A JP2013124907 A JP 2013124907A
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infrared sensor
sensor element
cover
signal processing
substrate
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JP6132223B2 (en
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Takeshi Yoshida
岳司 吉田
Takanori Sugiyama
貴則 杉山
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Panasonic Corp
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Panasonic Corp
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Priority to TW101145025A priority patent/TW201323841A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0205—Mechanical elements; Supports for optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J2005/065—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an infrared sensor which is capable of suppressing detection accuracy from being reduced.SOLUTION: An infrared sensor 1 comprises an infrared sensor element 2 which receives infrared rays R, a signal processing section 3 which processes an output signal of the infrared sensor element 2, a substrate 4 in which the infrared sensor element 2 and the signal processing section 3 are provided in parallel, and a case 5 which includes an opening 55 for making the infrared rays R incident to the infrared sensor element 2, is mounted to the substrate 4 and covers the infrared sensor element 2 and the signal processing section 3. The infrared sensor element 2 and the signal processing section 3 are connected electrically to the substrate 4 via connecting sections 6 which are provided on both sides of a direction crossing the direction where the infrared sensor element 2 and the signal processing section 3 are provided in parallel. A cover 7 covering both the infrared sensor element 2 and the signal processing section 3 is then provided inside of the case 5 and the cover 7 is mounted to both terminal portions of the substrate 4 in the parallel provision direction.

Description

本発明は、赤外線センサに関する。   The present invention relates to an infrared sensor.

従来、赤外線センサとして、基板に実装した赤外線センサ素子および信号処理部を収納し、かつレンズなどの光学系を備えた入射窓を有する金属製のケースと、当該ケース内部に前記光学系を介して赤外線センサ素子に赤外線を入射させる開口部を備えるセンサカバーとを配置したものが知られている（例えば、特許文献１参照）。   Conventionally, as an infrared sensor, an infrared sensor element mounted on a substrate and a signal processing unit are housed, and a metal case having an incident window provided with an optical system such as a lens, and the optical system inside the case via the optical system An arrangement in which a sensor cover having an opening for allowing infrared rays to enter the infrared sensor element is known (see, for example, Patent Document 1).

この特許文献１では、赤外線センサの視野内に入った対象物体からの赤外線をケースの入射窓からレンズを介して赤外線センサ素子に入射させることで、対象物体からの赤外線を赤外線センサ素子にて検知するようにしている。   In Patent Document 1, infrared light from a target object that enters the field of view of the infrared sensor is incident on the infrared sensor element through a lens from an incident window of the case, and the infrared light from the target object is detected by the infrared sensor element. Like to do.

また、本赤外線センサでは、ケース内部のセンサカバーにより、視野外の非対象物からの赤外線のうち、金属製のケースを経て入射する輻射線や、ケース内部の反射による輻射線が除去される。   Moreover, in this infrared sensor, the radiation from the non-object outside the field of view through the metal case and the radiation by reflection inside the case are removed by the sensor cover inside the case.

特開２０１１−１２８０６５号公報JP 2011-128065 A

上記従来の赤外線センサでは、長方形状の基板の長手方向に赤外線センサ素子と当該赤外線センサ素子の出力信号を処理する信号処理部が並設されている。そして、赤外線センサ素子を覆うようにセンサカバーが設けられている。   In the conventional infrared sensor, an infrared sensor element and a signal processing unit for processing an output signal of the infrared sensor element are arranged in parallel in the longitudinal direction of the rectangular substrate. A sensor cover is provided so as to cover the infrared sensor element.

ところで、信号処理部は発熱するものであり、この信号処理部によって生じた熱は、基板やケース内の気体に伝達されて基板やケース内の気体が温められることとなる。具体的には、外気に曝されるケースと発熱した信号処理部との間に温度差が生じるため、信号処理部の発熱によって生じた熱が信号処理部からケースに向けて移動し、当該熱の移動によってケース内が温められる。このとき、赤外線センサ素子のみをセンサカバーで覆っているため、信号処理部の熱がセンサカバー内の気体に伝わりにくく、信号処理部に近い部分と遠い部分との間に温度差が生じ、センサカバー内の温度分布に偏りが生じてしまう。そして、センサカバー内の温度分布に偏りが生じると、赤外線センサ素子表面に形成された複数個のセルの間にも温度差が生じてしまい、赤外線センサ素子表面のセル間で特性のバラツキが生じてしまうおそれがある。   By the way, the signal processing unit generates heat, and the heat generated by the signal processing unit is transmitted to the gas in the substrate and the case to warm the gas in the substrate and the case. Specifically, since a temperature difference occurs between the case exposed to the outside air and the generated signal processing unit, the heat generated by the heat generation of the signal processing unit moves from the signal processing unit toward the case, and the heat The inside of the case is warmed by the movement of. At this time, since only the infrared sensor element is covered with the sensor cover, the heat of the signal processing unit is not easily transmitted to the gas in the sensor cover, and a temperature difference is generated between a portion near the signal processing unit and a portion far from the signal processing unit. The temperature distribution in the cover will be biased. If the temperature distribution in the sensor cover is biased, a temperature difference also occurs between a plurality of cells formed on the surface of the infrared sensor element, resulting in variations in characteristics among the cells on the surface of the infrared sensor element. There is a risk that.

このように、上記従来の技術では、信号処理部の発熱による熱ノイズの影響によって検知精度が低下してしまうおそれがある。   As described above, in the conventional technique, the detection accuracy may be deteriorated due to the influence of the thermal noise due to the heat generated by the signal processing unit.

そこで、本発明は、検知精度が低下してしまうのを抑制することのできる赤外線センサを得ることを目的とする。   Then, an object of this invention is to obtain the infrared sensor which can suppress that a detection accuracy falls.

本発明の第１の特徴は、赤外線を受光する赤外線センサ素子と、当該赤外線センサ素子の出力信号を処理する信号処理部と、前記赤外線センサ素子および前記信号処理部が並設された基板と、赤外線を前記赤外線センサ素子に入射させる開口部を有し、前記基板に取り付けられて前記赤外線センサ素子および前記信号処理部を覆うケースと、を備え、前記赤外線センサ素子および前記信号処理部は、当該赤外線センサ素子および前記信号処理部の並設方向と交差する方向両側に設けられた結線部を介して前記基板に電気的に接続されており、前記赤外線センサ素子および信号処理部の両方を覆うカバーが前記ケース内に設けられており、当該カバーは、前記基板における前記並設方向の両端部で当該基板に取り付けられていることを要旨とする。   A first feature of the present invention is an infrared sensor element that receives infrared rays, a signal processing unit that processes an output signal of the infrared sensor element, a substrate on which the infrared sensor element and the signal processing unit are arranged in parallel, An opening that allows infrared light to enter the infrared sensor element, and a case that is attached to the substrate and covers the infrared sensor element and the signal processing unit, and the infrared sensor element and the signal processing unit include A cover that is electrically connected to the substrate via connection portions provided on both sides in a direction intersecting with the parallel arrangement direction of the infrared sensor element and the signal processing unit, and covers both the infrared sensor element and the signal processing unit Is provided in the case, and the cover is attached to the substrate at both ends of the substrate in the juxtaposed direction. .

本発明の第２の特徴は、前記カバーの内面に防錆処理が施されていることを要旨とする。   The gist of the second feature of the present invention is that the inner surface of the cover is subjected to rust prevention treatment.

本発明の第３の特徴は、前記カバーにおける前記並設方向と交差する方向両側の少なくとも前記赤外線センサ素子と対向する部位に、庇部が設けられていることを要旨とする。   The gist of the third feature of the present invention is that a flange portion is provided at least on the opposite side of the cover in the direction crossing the juxtaposed direction and facing the infrared sensor element.

本発明の第４の特徴は、前記カバーは、前記信号処理部に対応する部位が下段となり、前記赤外線センサ素子に対応する部位が上段となる段差状に形成されていることを要旨とする。   The gist of the fourth feature of the present invention is that the cover is formed in a step shape in which a portion corresponding to the signal processing unit is in the lower stage and a portion corresponding to the infrared sensor element is in the upper stage.

本発明によれば、赤外線センサ素子および信号処理部の両方を覆うカバーをケース内に設けている。このように、カバーをケース内に設けることで、カバー内部の空間の体積（内部空間に存在する気体の量）はケース内部の空間の体積（内部空間に存在する気体の量）よりも小さくなって、空間内の部位によるバラツキが生じにくくなるため、カバー内部の空間の温度分布の偏りを抑制することができ、カバー内部の空間温度をより均一な温度にすることができる。   According to the present invention, the cover that covers both the infrared sensor element and the signal processing unit is provided in the case. Thus, by providing the cover in the case, the volume of the space inside the cover (the amount of gas existing in the internal space) becomes smaller than the volume of the space inside the case (the amount of gas existing in the internal space). Thus, variations due to the portions in the space are less likely to occur, so that the uneven temperature distribution in the space inside the cover can be suppressed, and the space temperature inside the cover can be made more uniform.

さらに、本発明では、カバーを基板の並設方向両端部に取り付けているため、信号処理部の発熱によって生じた熱の一部が基板を介してカバーに伝達されるようになる。このように、信号処理部の発熱によって生じた熱がカバーに伝達すると、カバーと発熱した信号処理部との間の温度差は、発熱した信号処理部とケースとの間の温度差よりも小さくなる。そして、カバーに熱が伝達すると、当該カバーからも空間内に熱が伝達されることとなる。その結果、カバー内部の空間の温度分布の偏りをより一層抑制することができるようになり、カバー内部の空間温度をより均一な温度にすることができる。   Furthermore, in the present invention, since the covers are attached to both ends of the substrates in the side-by-side direction, part of the heat generated by the heat generated by the signal processing unit is transmitted to the cover through the substrate. Thus, when the heat generated by the heat generation of the signal processing unit is transferred to the cover, the temperature difference between the cover and the generated signal processing unit is smaller than the temperature difference between the generated signal processing unit and the case. Become. When heat is transmitted to the cover, heat is also transmitted from the cover into the space. As a result, the uneven temperature distribution in the space inside the cover can be further suppressed, and the space temperature inside the cover can be made more uniform.

このように、本発明によれば、赤外線センサ素子表面に形成されたそれぞれのセルの間に温度差が生じてしまうのを抑制することができ、ひいては、赤外線センサ素子表面のセル間で特性にバラツキが生じてしまうのを抑制することができるようになる。その結果、赤外線センサの検知精度が低下してしまうのを抑制することができるようになる。   As described above, according to the present invention, it is possible to suppress the occurrence of a temperature difference between the cells formed on the surface of the infrared sensor element. It becomes possible to suppress the occurrence of variations. As a result, it is possible to suppress a decrease in detection accuracy of the infrared sensor.

本発明の第１実施形態にかかる赤外線センサを示す平面図である。It is a top view which shows the infrared sensor concerning 1st Embodiment of this invention. 図１のI−I線断面図である。It is the II sectional view taken on the line of FIG. 図１のII−II線断面図である。It is the II-II sectional view taken on the line of FIG. 図１に示す赤外線センサのケースを取り除いた状態を示す平面図である。It is a top view which shows the state which removed the case of the infrared sensor shown in FIG. 本発明の第２実施形態にかかる赤外線センサを示す断面図である。It is sectional drawing which shows the infrared sensor concerning 2nd Embodiment of this invention.

以下、本発明の実施形態について図面を参照しつつ詳細に説明する。なお、以下の複数の実施形態には、同様の構成要素が含まれている。よって、以下では、それら同様の構成要素には共通の符号を付与するとともに、重複する説明を省略する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that similar components are included in the following embodiments. Therefore, in the following, common reference numerals are given to those similar components, and redundant description is omitted.

（第１実施形態）
本実施形態にかかる赤外線センサ１は、赤外線Ｒを受光する赤外線センサ素子２と、赤外線センサ素子２の出力信号を信号処理するＩＣ素子（信号処理部）３と、を備えており、赤外線センサ素子２およびＩＣ素子３が基板４に実装されている。この赤外線センサ１は、赤外線を受光して、例えば、温度分布や熱源の有無などを検出するものである。 (First embodiment)
The infrared sensor 1 according to the present embodiment includes an infrared sensor element 2 that receives infrared R, and an IC element (signal processing unit) 3 that processes an output signal of the infrared sensor element 2. 2 and the IC element 3 are mounted on the substrate 4. The infrared sensor 1 receives infrared rays and detects, for example, temperature distribution and presence / absence of a heat source.

赤外線センサ素子２としては、例えば、ゼーベック効果を利用して赤外線Ｒを電圧として検知できるサーモパイル型赤外線センサを用いることができる。このサーモパイル型赤外線センサは、受光した赤外線Ｒを赤外線吸収膜で熱に変換し、この熱により発生した温接点部の温度変化を直列に多数個接続した熱電対により電圧として出力するものである。   As the infrared sensor element 2, for example, a thermopile type infrared sensor that can detect the infrared ray R as a voltage using the Seebeck effect can be used. This thermopile type infrared sensor converts received infrared rays R into heat by an infrared absorption film, and outputs a temperature as a voltage by a thermocouple in which a large number of temperature changes of the hot junction portions generated by the heat are connected in series.

そして、赤外線センサ素子２およびＩＣ素子３は、長方形状の基板４の長手方向（Ｘ方向：並設方向）に近接して並設されている。このとき、ＩＣ素子３が配置される部分の基板４には凹部４１が形成されており、この凹部４１にＩＣ素子３の底部３ａが嵌め込まれた状態で実装されている。   The infrared sensor element 2 and the IC element 3 are juxtaposed in the vicinity of the longitudinal direction (X direction: juxtaposition direction) of the rectangular substrate 4. At this time, a recess 41 is formed in the portion of the substrate 4 where the IC element 3 is arranged, and the IC chip 3 is mounted with the bottom 3 a of the IC element 3 fitted therein.

基板４は、ほぼ矩形の平板形状をなしており、樹脂系のプリント基板やセラミック基板などの多層基板として形成されている。そして、基板４の内層には図示せぬグランドパターンや電気回路配線が形成されている。グランドパターンはベタグランドパターンであり、基板４内を通って図示せぬ外部端子によってグランドに接続される。   The substrate 4 has a substantially rectangular flat plate shape, and is formed as a multilayer substrate such as a resin-based printed substrate or a ceramic substrate. A ground pattern and electric circuit wiring (not shown) are formed on the inner layer of the substrate 4. The ground pattern is a solid ground pattern and is connected to the ground through the substrate 4 by an external terminal (not shown).

また、赤外線センサ素子２およびＩＣ素子３は、基板４に設置される金属製のケース５に収容されている。このケース５は、矩形状の天壁５１と周壁５２とによって、底面部分が開放した直方体状に形成されている。そして、周壁５２の開放側端には取付け用のフランジ部５３が折曲形成されており、このフランジ部５３を金属リング５４を介して基板４に接続することで、ケース５を基板４に設置している。   The infrared sensor element 2 and the IC element 3 are housed in a metal case 5 installed on the substrate 4. The case 5 is formed by a rectangular top wall 51 and a peripheral wall 52 in a rectangular parallelepiped shape with a bottom surface portion opened. A flange portion 53 for attachment is bent at the open end of the peripheral wall 52, and the case 5 is installed on the substrate 4 by connecting the flange portion 53 to the substrate 4 via a metal ring 54. doing.

また、ケース５の天壁５１には、測定しようとする対象物体の赤外線Ｒを赤外線センサ素子２に入射させる窓部（開口部）５５が形成されている。そして、この窓部５５を下方から覆うようにレンズ（光学系）５６が取り付けられている。   The top wall 51 of the case 5 is formed with a window portion (opening portion) 55 for allowing the infrared ray R of the target object to be measured to enter the infrared sensor element 2. A lens (optical system) 56 is attached so as to cover the window portion 55 from below.

このように、本実施形態のケース５は、開口部により対象物体の赤外線Ｒを入射する機能を有し、基板４に取り付けられて赤外線センサ素子２およびＩＣ素子３を覆うケースに相当するものである。   As described above, the case 5 of the present embodiment has a function of making the infrared ray R of the target object incident through the opening, and corresponds to a case that is attached to the substrate 4 and covers the infrared sensor element 2 and the IC element 3. is there.

なお、レンズ５６は、赤外線センサ素子２の受光面との間に所定距離をおいて天壁５１に保持されており、窓部５５を通過する赤外線Ｒを、赤外線センサ素子２に結像させるようにしている。また、レンズ５６は、赤外線センサ素子２と対向するように赤外線センサ素子２の上方に配置されている。   The lens 56 is held on the top wall 51 at a predetermined distance from the light receiving surface of the infrared sensor element 2 so that the infrared ray R passing through the window 55 is imaged on the infrared sensor element 2. I have to. The lens 56 is disposed above the infrared sensor element 2 so as to face the infrared sensor element 2.

また、レンズ５６には、赤外線を透過するＳｉなどにより赤外線の集光機能を司るレンズ母体が形成されており、このレンズ母体の表面に赤外線周辺波長を選択的に透過させる光学多層膜からなるバンドパスフィルタが形成されている。   Further, the lens 56 is formed with a lens matrix that controls the function of condensing infrared rays by Si or the like that transmits infrared rays. A band made of an optical multilayer film that selectively transmits infrared peripheral wavelengths to the surface of the lens matrix. A pass filter is formed.

さらに、レンズ５６は、図１に示すように、矩形状に形成されており、片面（上面）が平坦面、他面（下面）が凸面となる凸レンズとして形成されている。なお、レンズ５６は、両面が凸面に形成されていてもよく、また、片面が凹面で他面がその凹面よりも曲率の大きな凸面で形成されていてもよい。すなわち、レンズ５６は赤外線センサ素子２に集光させる機能を有していればよい。また、凸面や凹面が放物面であってもよい。   Further, as shown in FIG. 1, the lens 56 is formed in a rectangular shape, and is formed as a convex lens in which one surface (upper surface) is a flat surface and the other surface (lower surface) is a convex surface. The lens 56 may be formed with convex surfaces on both sides, or may be formed with a convex surface having a concave surface on one side and a larger curvature than the concave surface on the other surface. That is, the lens 56 only needs to have a function of condensing on the infrared sensor element 2. Further, the convex surface or the concave surface may be a paraboloid.

また、赤外線センサ素子２およびＩＣ素子３は、ボンディングワイヤ等の結線部６によって基板４に電気的に接続されている。本実施形態では、結線部６は、図４に示すように、基板４の短手方向（Ｙ方向：並設方向と交差する方向）に設けられている。   Further, the infrared sensor element 2 and the IC element 3 are electrically connected to the substrate 4 by a connection part 6 such as a bonding wire. In this embodiment, the connection part 6 is provided in the transversal direction of the board | substrate 4 (Y direction: direction which cross | intersects the juxtaposition direction), as shown in FIG.

ここで、本実施形態では、ケース５の内方に、赤外線センサ素子２およびＩＣ素子３の両方を覆うカバー７を設けている。このカバー７は、コバール等の金属板で形成されている。さらに、本実施形態では、カバー７の内面には防錆処理が施されている。   Here, in the present embodiment, a cover 7 that covers both the infrared sensor element 2 and the IC element 3 is provided inside the case 5. The cover 7 is formed of a metal plate such as Kovar. Furthermore, in the present embodiment, the inner surface of the cover 7 is subjected to rust prevention treatment.

カバー７は、図２に示すように、基板４の長手方向（Ｘ方向）に長辺となる矩形状の天壁７１と、この天壁７１の長辺方向両端部に設けられる脚壁７２とによって、正面視で扁平な逆Ｕ字状に形成されている。また、脚壁７２の先端部は外方に折曲形成されており、この部分が取付面７３となっている。そして、取付面７３を銀ペースト等によって基板４に固定することで、カバー７が、赤外線センサ素子２およびＩＣ素子３をＸ方向に跨いだ状態で基板４に取り付けられている。このとき、カバー７の天壁７１は、基板４の表面、すなわち赤外線センサ素子２の設置面から所定高さｈをもって配置されている。本実施形態では、この所定高さｈは、赤外線センサ素子２に対象物体からの赤外線Ｒを結像させるための距離よりも短くなるように設定している。すなわち、レンズ５６と天壁７１との間に隙間が形成されるようにカバー７を取り付けている。   As shown in FIG. 2, the cover 7 includes a rectangular top wall 71 having a long side in the longitudinal direction (X direction) of the substrate 4, and leg walls 72 provided at both ends of the top wall 71 in the long side direction. Therefore, it is formed in a flat inverted U shape in front view. Further, the distal end portion of the leg wall 72 is bent outward, and this portion serves as an attachment surface 73. And the cover 7 is attached to the board | substrate 4 in the state which straddled the infrared sensor element 2 and the IC element 3 in the X direction by fixing the attachment surface 73 to the board | substrate 4 with silver paste etc. FIG. At this time, the top wall 71 of the cover 7 is disposed with a predetermined height h from the surface of the substrate 4, that is, the installation surface of the infrared sensor element 2. In the present embodiment, the predetermined height h is set to be shorter than the distance for imaging the infrared ray R from the target object on the infrared sensor element 2. That is, the cover 7 is attached so that a gap is formed between the lens 56 and the top wall 71.

また、カバー７の天壁７１の赤外線センサ素子２に対応する部位には、ケース５の窓部５５から入射した赤外線Ｒを赤外線センサ素子２に透過させる透過窓７４が設けられている。本実施形態では、透過窓７４は、矩形状の単なる開口部となっている。   Further, a transmission window 74 that transmits the infrared ray R incident from the window portion 55 of the case 5 to the infrared sensor element 2 is provided at a portion corresponding to the infrared sensor element 2 of the top wall 71 of the cover 7. In the present embodiment, the transmission window 74 is a simple opening having a rectangular shape.

また、本実施形態では、図２および図３に示すように、カバー７の基板４の短手方向（Ｙ方向）両側部に、基板４に向かって屈曲する庇部７５が折曲形成されている。本実施形態では、この庇部７５は、カバー７の両側部の略全長に亘って設けられている（図２参照）が、必ずしもカバー７の両側部の全長に亘って設ける必要はなく、少なくとも赤外線センサ素子２に対向する部位に設けられていればよい。   Further, in this embodiment, as shown in FIGS. 2 and 3, hooks 75 that are bent toward the substrate 4 are formed on both sides of the cover 4 in the short direction (Y direction) of the substrate 4. Yes. In the present embodiment, the flange 75 is provided over substantially the entire length of both sides of the cover 7 (see FIG. 2), but it is not necessarily provided over the entire length of both sides of the cover 7, and at least What is necessary is just to be provided in the site | part facing the infrared sensor element 2. FIG.

次に、かかる構成の赤外線センサ１の作用について説明する。   Next, the operation of the infrared sensor 1 having such a configuration will be described.

まず、対象物体から放射される赤外線Ｒが窓部５５のレンズ５６を介して赤外線センサ１内に入射され、赤外線センサ素子２にて結像することとなる。そして、赤外線センサ素子２が入射した赤外線Ｒに応じた電圧を出力し、この出力信号をＩＣ素子３が処理することで、対象物体の温度が検知される。   First, the infrared ray R radiated from the target object enters the infrared sensor 1 through the lens 56 of the window 55 and forms an image on the infrared sensor element 2. The infrared sensor element 2 outputs a voltage corresponding to the incident infrared ray R, and the IC element 3 processes the output signal, thereby detecting the temperature of the target object.

このとき、ＩＣ素子（信号処理部）３の発熱によって生じた熱が、基板４、およびケース５内の気体を介して赤外線センサ素子２に伝達される。   At this time, the heat generated by the heat generation of the IC element (signal processing unit) 3 is transmitted to the infrared sensor element 2 through the substrate 4 and the gas in the case 5.

本実施形態では、赤外線センサ素子２およびＩＣ素子（信号処理部）３の両方を覆うカバー７をケース５内に設けている。このように、カバー７をケース５内に設けることで、カバー７内部の空間の体積（内部空間に存在する気体の量）はケース５内部の空間の体積（内部空間に存在する気体の量）よりも小さくなるため、カバー７内部の空間の温度分布の偏りを抑制することができ、カバー７内部の空間温度をより均一な温度にすることができる。   In the present embodiment, a cover 7 that covers both the infrared sensor element 2 and the IC element (signal processing unit) 3 is provided in the case 5. Thus, by providing the cover 7 in the case 5, the volume of the space inside the cover 7 (the amount of gas existing in the internal space) is the volume of the space inside the case 5 (the amount of gas existing in the internal space). Therefore, the uneven temperature distribution in the space inside the cover 7 can be suppressed, and the space temperature inside the cover 7 can be made more uniform.

さらに、本実施形態では、カバー７を基板４のＸ方向（長手方向：並設方向）の両端部に取り付けているため、ＩＣ素子（信号処理部）３の発熱によって生じた熱の一部が基板４を介してカバー７に伝達されるようになる。このように、ＩＣ素子（信号処理部）３の発熱によって生じた熱がカバー７に伝達すると、カバー７と発熱したＩＣ素子（信号処理部）３との間の温度差は、外気に曝されるケース５と発熱したＩＣ素子（信号処理部）３との間の温度差よりも小さくなる。そして、カバー７に熱が伝達すると、当該カバー７からも空間内に熱が伝達されることとなる。その結果、カバー７内部の空間の温度分布の偏りをより一層抑制することができるようになり、カバー７内部の空間温度をより均一な温度にすることができる。特に、本実施形態では、金属製のカバー７を用いているため、カバー７の表面の温度がより均一になりやすく、カバー７内部の空間温度をより一層均一な温度にすることができるようになる。   Furthermore, in this embodiment, since the cover 7 is attached to both ends of the substrate 4 in the X direction (longitudinal direction: parallel arrangement direction), a part of heat generated by the heat generation of the IC element (signal processing unit) 3 is generated. It is transmitted to the cover 7 via the substrate 4. Thus, when the heat generated by the heat generation of the IC element (signal processing unit) 3 is transmitted to the cover 7, the temperature difference between the cover 7 and the generated IC element (signal processing unit) 3 is exposed to the outside air. The temperature difference between the case 5 and the heated IC element (signal processing unit) 3 is smaller. When heat is transmitted to the cover 7, heat is also transmitted from the cover 7 into the space. As a result, the uneven temperature distribution in the space inside the cover 7 can be further suppressed, and the space temperature inside the cover 7 can be made more uniform. In particular, in the present embodiment, since the metal cover 7 is used, the surface temperature of the cover 7 tends to be more uniform, and the space temperature inside the cover 7 can be made more uniform. Become.

このように、本実施形態によれば、赤外線センサ素子２の表面に形成された複数個のセルの間に温度差が生じてしまうのを抑制することができ、ひいては、赤外線センサ素子２の表面の素子間で特性にバラツキが生じてしまうのを抑制することができるようになる。その結果、赤外線センサ１の検知精度が低下してしまうのを抑制することができるようになる。   As described above, according to the present embodiment, it is possible to suppress the occurrence of a temperature difference between the plurality of cells formed on the surface of the infrared sensor element 2, and consequently the surface of the infrared sensor element 2. It is possible to suppress variations in characteristics between the elements. As a result, it is possible to prevent the detection accuracy of the infrared sensor 1 from being lowered.

また、赤外線センサ素子２およびＩＣ素子３は、Ｙ方向（短手方向：赤外線センサ素子２およびＩＣ素子３の並設方向と交差する方向）の両側に設けられた電極パッドにより、ボンディングワイヤ等の結線部６を介して前記基板に電気的に接続されている。そして、赤外線センサ素子２およびＩＣ素子３を覆うカバー７は、Ｘ方向（長手方向：並設方向）両端部（脚壁７２の取付面７３）を基板４に取り付けることで、基板４に実装されている。このように実装されることで、カバー７を設置する際の、赤外線センサ素子２およびＩＣ素子３を基板４に電気的に接続する結線部６とカバー７の脚壁７２との接触が抑制され、接触不良が生じるのを抑制することができる。また、カバー７の実装作業を容易に行うことができるようになる。   Further, the infrared sensor element 2 and the IC element 3 are bonded to each other with bonding pads or the like by electrode pads provided on both sides in the Y direction (short direction: a direction intersecting the parallel arrangement direction of the infrared sensor element 2 and the IC element 3). It is electrically connected to the substrate via the connection part 6. The cover 7 covering the infrared sensor element 2 and the IC element 3 is mounted on the substrate 4 by attaching both end portions (attachment surfaces 73 of the leg walls 72) to the substrate 4 in the X direction (longitudinal direction: juxtaposed direction). ing. By being mounted in this way, contact between the connection portion 6 that electrically connects the infrared sensor element 2 and the IC element 3 to the substrate 4 and the leg wall 72 of the cover 7 when the cover 7 is installed is suppressed. The occurrence of poor contact can be suppressed. Moreover, the mounting operation of the cover 7 can be easily performed.

また、本実施形態によれば、カバー７の内面に防錆処理を施しているため、カバー７内面が経年劣化等の腐食によって変色してしまうのを抑制することができる。その結果、腐食による変色で赤外線センサ２への受光量が変化することに起因する測定温度の特性変動を抑制することができるようになる。   Moreover, according to this embodiment, since the antirust process is performed to the inner surface of the cover 7, it can suppress that the cover 7 inner surface discolors by corrosion, such as aged deterioration. As a result, it is possible to suppress fluctuations in the characteristics of the measured temperature caused by a change in the amount of light received by the infrared sensor 2 due to discoloration due to corrosion.

また、本実施形態によれば、カバー７の基板４の短手方向（Ｙ方向）両側部に、基板４に向かって屈曲する庇部７５を設けている。そして、この庇部７５によって赤外線センサ素子２を囲うことができるようにしている。その結果、カバー内の空間の温度分布が偏ってしまうのをより一層抑制することができ、ＩＣ素子３の発熱による熱ノイズの影響をより低減させることができる。   In addition, according to the present embodiment, the flange portions 75 that are bent toward the substrate 4 are provided on both sides of the cover 4 in the short direction (Y direction) of the substrate 4. Then, the infrared sensor element 2 can be surrounded by the flange portion 75. As a result, the temperature distribution in the space in the cover can be further suppressed from being biased, and the influence of thermal noise due to heat generated by the IC element 3 can be further reduced.

ところで、赤外線センサ１は、本来は視野角内に位置する対象物体からの赤外線Ｒをレンズ５６を通して赤外線センサ素子２に結像させるものである。ところが、赤外線センサ１にカバー７が存在しない場合、視野角外に有る対象物体以外からの赤外線が、大きな傾斜角度をもってレンズ５６から入射し、ケース５の内面に反射して赤外線センサ素子２に入射してしまう場合がある。また、視野角外に有る対象物体以外からの赤外線によってケース５が加熱され、加熱されたケース５の輻射熱による赤外線が直接または間接に赤外線センサ素子２に入射する場合がある。   By the way, the infrared sensor 1 forms an image on the infrared sensor element 2 through the lens 56 from the infrared ray R that is originally located within the viewing angle. However, when the cover 7 does not exist in the infrared sensor 1, infrared rays from other than the target object outside the viewing angle are incident from the lens 56 with a large inclination angle, reflected on the inner surface of the case 5, and incident on the infrared sensor element 2. May end up. Further, the case 5 may be heated by infrared rays from other than the target object outside the viewing angle, and the infrared rays due to the radiant heat of the heated case 5 may be incident directly or indirectly on the infrared sensor element 2.

このように、赤外線センサ１にカバー７が存在しない場合、視野角外に有る対象物体以外からの赤外線が直接または間接に赤外線センサ素子２に入射されてノイズ原因となる。   Thus, when the cover 7 does not exist in the infrared sensor 1, infrared rays from other than the target object outside the viewing angle are directly or indirectly incident on the infrared sensor element 2 to cause noise.

これに対して本実施形態では、視野角外に有る対象物体以外からの赤外線をカバー７の天壁７１や脚壁７２、庇部７５で遮断することができる。したがって、本実施形態では、視野角外に有る対象物体以外からの赤外線が赤外線センサ素子２に影響するのをカバー７によって抑制することができ、赤外線センサ素子２による測定精度を向上させることができるようになる。   On the other hand, in the present embodiment, infrared rays from other than the target object outside the viewing angle can be blocked by the top wall 71, the leg wall 72, and the collar portion 75 of the cover 7. Therefore, in this embodiment, it can suppress by the cover 7 that the infrared rays from those other than the target object outside the viewing angle affect the infrared sensor element 2, and the measurement accuracy by the infrared sensor element 2 can be improved. It becomes like this.

（第２実施形態）
本実施形態にかかる赤外線センサ１Ａが、上記第１実施形態と主に異なる点は、カバー７を、赤外線センサ素子２とＩＣ素子３に対応する部分の間で段差状にしたことにある。 (Second Embodiment)
The infrared sensor 1 </ b> A according to the present embodiment is mainly different from the first embodiment in that the cover 7 is stepped between portions corresponding to the infrared sensor element 2 and the IC element 3.

すなわち、本実施形態では、図５に示すように、カバー７の天壁７１を、ＩＣ素子３に対応する部分が下段７１ａとなり、赤外線センサ素子２に対応する部分が上段７１ｂとなる段差状に形成している。このとき、上段７１ｂの基板４からの高さは、上記第１実施形態の天壁７１の高さと同じｈとなるように設定している。   That is, in this embodiment, as shown in FIG. 5, the top wall 71 of the cover 7 has a stepped shape in which the portion corresponding to the IC element 3 is the lower step 71a and the portion corresponding to the infrared sensor element 2 is the upper step 71b. Forming. At this time, the height of the upper stage 71b from the substrate 4 is set to be the same h as the height of the top wall 71 of the first embodiment.

また、本実施形態にあっても、カバー７は赤外線センサ素子２およびＩＣ素子３の両方を覆っている。   Also in this embodiment, the cover 7 covers both the infrared sensor element 2 and the IC element 3.

以上の本実施形態によっても、上記第１実施形態と同様の作用、効果を奏することができる。   Also according to this embodiment described above, the same operations and effects as those of the first embodiment can be achieved.

また、本実施形態によれば、カバー７を段差状に形成し、ＩＣ素子（信号処理部）３に対応する部分を下段７１ａとし、赤外線センサ素子２に対応する部分を上段７１ｂとしている。したがって、カバー７の上段７１ｂの高さを、上記第１実施形態のカバー７の高さと同じレベルｈとした場合、下段７１ａの位置をよりＩＣ素子３に近づけることができるようになり、カバー７の内部空間の体積（内部空間に存在する気体の量）をより小さくすることができる。そのため、ＩＣ素子３が発熱した際に、カバー７の内部空間をより素早く温めることができるようになり、カバー７内部空間の温度（特に、赤外線センサ素子２の表面近傍の温度）をより素早く均一な状態とすることができる。   Further, according to the present embodiment, the cover 7 is formed in a stepped shape, a portion corresponding to the IC element (signal processing unit) 3 is a lower stage 71a, and a portion corresponding to the infrared sensor element 2 is an upper stage 71b. Therefore, when the height of the upper stage 71b of the cover 7 is set to the same level h as the height of the cover 7 of the first embodiment, the position of the lower stage 71a can be brought closer to the IC element 3, and the cover 7 The volume of the internal space (the amount of gas present in the internal space) can be further reduced. Therefore, when the IC element 3 generates heat, the internal space of the cover 7 can be warmed more quickly, and the temperature of the internal space of the cover 7 (particularly, the temperature in the vicinity of the surface of the infrared sensor element 2) can be made quicker and uniform. It can be in a state.

以上、本発明の好適な実施形態について説明したが、本発明は上記実施形態には限定されず、種々の変形が可能である。   The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above embodiments, and various modifications can be made.

１、１Ａ 赤外線センサ
２ 赤外線センサ素子
３ ＩＣ素子（信号処理部）
４ 基板
５ ケース
６ 結線部
７ カバー
５５ 窓部（開口部）
７１ａ 下段
７１ｂ 上段
７５ 庇部 1, 1A Infrared sensor 2 Infrared sensor element 3 IC element (signal processing unit)
4 Substrate 5 Case 6 Connection 7 Cover 55 Window (Opening)
71a lower stage 71b upper stage 75 buttocks

Claims (4)

赤外線を受光する赤外線センサ素子と、当該赤外線センサ素子の出力信号を処理する信号処理部と、前記赤外線センサ素子および前記信号処理部が並設された基板と、赤外線を前記赤外線センサ素子に入射させる開口部を有し、前記基板に取り付けられて前記赤外線センサ素子および前記信号処理部を覆うケースと、を備え、
前記赤外線センサ素子および前記信号処理部は、当該赤外線センサ素子および前記信号処理部の並設方向と交差する方向両側に設けられた結線部を介して前記基板に電気的に接続されており、
前記赤外線センサ素子および信号処理部の両方を覆うカバーが前記ケース内に設けられており、当該カバーは、前記基板における前記並設方向の両端部で当該基板に取り付けられていることを特徴とする赤外線センサ。 An infrared sensor element that receives infrared light, a signal processing unit that processes an output signal of the infrared sensor element, a substrate on which the infrared sensor element and the signal processing unit are arranged, and infrared light is incident on the infrared sensor element A case that has an opening and is attached to the substrate and covers the infrared sensor element and the signal processing unit,
The infrared sensor element and the signal processing unit are electrically connected to the substrate via connection portions provided on both sides of the direction intersecting the parallel arrangement direction of the infrared sensor element and the signal processing unit,
A cover that covers both the infrared sensor element and the signal processing unit is provided in the case, and the cover is attached to the substrate at both ends of the substrate in the juxtaposition direction. Infrared sensor. 前記カバーの内面に防錆処理が施されていることを特徴とする請求項１に記載の赤外線センサ。   The infrared sensor according to claim 1, wherein the inner surface of the cover is subjected to rust prevention treatment. 前記カバーにおける前記並設方向と交差する方向両側の少なくとも前記赤外線センサ素子と対向する部位に、庇部が設けられていることを特徴とする請求項１または請求項２に記載の赤外線センサ。   3. The infrared sensor according to claim 1, wherein a flange portion is provided at least at a portion facing the infrared sensor element on both sides of the cover in a direction intersecting the juxtaposed direction. 前記カバーは、前記信号処理部に対応する部位が下段となり、前記赤外線センサ素子に対応する部位が上段となる段差状に形成されていることを特徴とする請求項１〜３のうちいずれか１項に記載の赤外線センサ。   The said cover is formed in the level | step difference from which the site | part corresponding to the said signal processing part becomes a lower stage, and the site | part corresponding to the said infrared sensor element becomes an upper stage. The infrared sensor according to the item.
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