JP2013115289A - 半導体装置、半導体装置の製造方法、および電子機器 - Google Patents

半導体装置、半導体装置の製造方法、および電子機器 Download PDF

Info

Publication number
JP2013115289A
JP2013115289A JP2011261331A JP2011261331A JP2013115289A JP 2013115289 A JP2013115289 A JP 2013115289A JP 2011261331 A JP2011261331 A JP 2011261331A JP 2011261331 A JP2011261331 A JP 2011261331A JP 2013115289 A JP2013115289 A JP 2013115289A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
connection hole
connection
semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011261331A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013115289A5 (https=
Inventor
Toshihiko Hayashi
利彦 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011261331A priority Critical patent/JP2013115289A/ja
Priority to US13/671,130 priority patent/US8853852B2/en
Priority to CN201210483705.4A priority patent/CN103137636B/zh
Publication of JP2013115289A publication Critical patent/JP2013115289A/ja
Publication of JP2013115289A5 publication Critical patent/JP2013115289A5/ja
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/213—Cross-sectional shapes or dispositions
    • H10W20/2134—TSVs extending from the semiconductor wafer into back-end-of-line layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2011261331A 2011-11-30 2011-11-30 半導体装置、半導体装置の製造方法、および電子機器 Abandoned JP2013115289A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011261331A JP2013115289A (ja) 2011-11-30 2011-11-30 半導体装置、半導体装置の製造方法、および電子機器
US13/671,130 US8853852B2 (en) 2011-11-30 2012-11-07 Semiconductor apparatus and electronic equipment
CN201210483705.4A CN103137636B (zh) 2011-11-30 2012-11-23 半导体装置、半导体装置制造方法及电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011261331A JP2013115289A (ja) 2011-11-30 2011-11-30 半導体装置、半導体装置の製造方法、および電子機器

Publications (2)

Publication Number Publication Date
JP2013115289A true JP2013115289A (ja) 2013-06-10
JP2013115289A5 JP2013115289A5 (https=) 2014-12-25

Family

ID=48466078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011261331A Abandoned JP2013115289A (ja) 2011-11-30 2011-11-30 半導体装置、半導体装置の製造方法、および電子機器

Country Status (3)

Country Link
US (1) US8853852B2 (https=)
JP (1) JP2013115289A (https=)
CN (1) CN103137636B (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014072296A (ja) * 2012-09-28 2014-04-21 Canon Inc 半導体装置
KR20150016078A (ko) * 2013-08-01 2015-02-11 가부시끼가이샤 도시바 고체 촬상 장치 및 고체 촬상 장치의 제조 방법
JP2015029047A (ja) * 2013-07-05 2015-02-12 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
WO2015170628A1 (ja) * 2014-05-09 2015-11-12 ソニー株式会社 固体撮像装置および電子機器
JP2016225470A (ja) * 2015-05-29 2016-12-28 株式会社東芝 半導体デバイスの製造方法
WO2019069559A1 (ja) * 2017-10-03 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US10658413B2 (en) 2017-12-26 2020-05-19 Samsung Electronics Co., Ltd. Semiconductor device including via plug

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6012262B2 (ja) 2012-05-31 2016-10-25 キヤノン株式会社 半導体装置の製造方法
JP6041607B2 (ja) 2012-09-28 2016-12-14 キヤノン株式会社 半導体装置の製造方法
US9356066B2 (en) * 2013-03-15 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for stacked device and method
DE102014204647A1 (de) * 2014-03-13 2015-09-17 Robert Bosch Gmbh Optische Erfassungsvorrichtung und Verfahren zum Herstellen einer optischen Erfassungsvorrichtung
US9536920B2 (en) * 2014-03-28 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensor having a barrier layer
CN103985725B (zh) * 2014-06-03 2017-03-08 豪威科技(上海)有限公司 半导体结构及其制备方法
US10164141B2 (en) * 2014-07-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with damage reduction
WO2016014790A1 (en) * 2014-07-23 2016-01-28 Georgia Tech Research Corporation Electrically short antennas with enhanced radiation resistance
CN104766828B (zh) * 2015-03-31 2017-08-04 武汉新芯集成电路制造有限公司 晶圆三维集成的方法
CN104733381A (zh) * 2015-03-31 2015-06-24 武汉新芯集成电路制造有限公司 一种晶圆硅穿孔互连工艺
TWI692859B (zh) * 2015-05-15 2020-05-01 日商新力股份有限公司 固體攝像裝置及其製造方法、以及電子機器
US12087629B2 (en) * 2015-05-18 2024-09-10 Adeia Semiconductor Technologies Llc Through-dielectric-vias (TDVs) for 3D integrated circuits in silicon
CN104952843B (zh) * 2015-07-01 2017-08-08 武汉新芯集成电路制造有限公司 物联网系统芯片及其制备方法
CN106611756A (zh) * 2015-10-26 2017-05-03 联华电子股份有限公司 晶片对晶片对接结构及其制作方法
US10297631B2 (en) 2016-01-29 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Metal block and bond pad structure
JP7291630B2 (ja) * 2017-04-27 2023-06-15 アライド ビジョン テクロノジー ゲーエムベーハー データを検出するための装置
CN109148275A (zh) * 2018-08-28 2019-01-04 武汉新芯集成电路制造有限公司 半导体器件及其制作方法
KR20220017626A (ko) * 2020-08-05 2022-02-14 삼성전자주식회사 이미지 센서
KR102887278B1 (ko) * 2020-12-17 2025-11-17 삼성전자주식회사 이미지 센서

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1295776C (zh) * 2003-12-24 2007-01-17 上海宏力半导体制造有限公司 可分别对双镶嵌工艺的中介窗与沟槽进行表面处理的方法
JP5985136B2 (ja) * 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10229948B2 (en) 2012-09-28 2019-03-12 Canon Kabushiki Kaisha Semiconductor apparatus
JP2014072296A (ja) * 2012-09-28 2014-04-21 Canon Inc 半導体装置
US9520430B2 (en) 2013-07-05 2016-12-13 Sony Corporation Solid state imaging apparatus, production method thereof and electronic device
US11532762B2 (en) 2013-07-05 2022-12-20 Sony Corporation Solid state imaging apparatus, production method thereof and electronic device
JP2015029047A (ja) * 2013-07-05 2015-02-12 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9871148B2 (en) 2013-07-05 2018-01-16 Sony Corporation Solid state imaging apparatus, production method thereof and electronic device
US9214488B2 (en) 2013-08-01 2015-12-15 Kabushiki Kaisha Toshiba Solid state imaging device
KR101579372B1 (ko) * 2013-08-01 2015-12-21 가부시끼가이샤 도시바 고체 촬상 장치 및 고체 촬상 장치의 제조 방법
KR20150016078A (ko) * 2013-08-01 2015-02-11 가부시끼가이샤 도시바 고체 촬상 장치 및 고체 촬상 장치의 제조 방법
US9911768B2 (en) 2014-05-09 2018-03-06 Sony Corporation Solid state imaging device and electronic apparatus
WO2015170628A1 (ja) * 2014-05-09 2015-11-12 ソニー株式会社 固体撮像装置および電子機器
JP2016225470A (ja) * 2015-05-29 2016-12-28 株式会社東芝 半導体デバイスの製造方法
WO2019069559A1 (ja) * 2017-10-03 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JPWO2019069559A1 (ja) * 2017-10-03 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7175905B2 (ja) 2017-10-03 2022-11-21 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US11902696B2 (en) 2017-10-03 2024-02-13 Sony Semiconductor Solutions Corporation Infrared imaging device including drive and signal lines configured to electrically connect first and second substrates
US10658413B2 (en) 2017-12-26 2020-05-19 Samsung Electronics Co., Ltd. Semiconductor device including via plug

Also Published As

Publication number Publication date
CN103137636B (zh) 2018-05-11
US8853852B2 (en) 2014-10-07
CN103137636A (zh) 2013-06-05
US20130134576A1 (en) 2013-05-30

Similar Documents

Publication Publication Date Title
JP2013115289A (ja) 半導体装置、半導体装置の製造方法、および電子機器
KR102663337B1 (ko) 반도체 장치 및 전자 기기
US20240178057A1 (en) Semiconductor device, manufacturing method thereof, solid-state imaging device, and electronic apparatus
JP5664205B2 (ja) 半導体装置とその製造方法、及び電子機器
KR101770077B1 (ko) 반도체 장치와 그 제조 방법, 및 전자 기기
JP5853351B2 (ja) 半導体装置、半導体装置の製造方法、及び電子機器
TWI871680B (zh) 攝像裝置及電子機器
JP6200035B2 (ja) 半導体装置
JP5915636B2 (ja) 半導体装置とその製造方法
JP6256562B2 (ja) 固体撮像装置及び電子機器
JP6233376B2 (ja) 固体撮像装置及び電子機器
JP2018078305A (ja) 固体撮像装置及び電子機器
JP7001120B2 (ja) 固体撮像装置及び電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141111

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141111

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20150402