JP2013115289A - 半導体装置、半導体装置の製造方法、および電子機器 - Google Patents

半導体装置、半導体装置の製造方法、および電子機器 Download PDF

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Publication number
JP2013115289A
JP2013115289A JP2011261331A JP2011261331A JP2013115289A JP 2013115289 A JP2013115289 A JP 2013115289A JP 2011261331 A JP2011261331 A JP 2011261331A JP 2011261331 A JP2011261331 A JP 2011261331A JP 2013115289 A JP2013115289 A JP 2013115289A
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Prior art keywords
semiconductor substrate
connection hole
connection
semiconductor
film
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Abandoned
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JP2011261331A
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Japanese (ja)
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JP2013115289A5 (enExample
Inventor
Toshihiko Hayashi
利彦 林
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Sony Corp
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Sony Corp
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Priority to JP2011261331A priority Critical patent/JP2013115289A/ja
Priority to US13/671,130 priority patent/US8853852B2/en
Priority to CN201210483705.4A priority patent/CN103137636B/zh
Publication of JP2013115289A publication Critical patent/JP2013115289A/ja
Publication of JP2013115289A5 publication Critical patent/JP2013115289A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/213—Cross-sectional shapes or dispositions
    • H10W20/2134—TSVs extending from the semiconductor wafer into back-end-of-line layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2011261331A 2011-11-30 2011-11-30 半導体装置、半導体装置の製造方法、および電子機器 Abandoned JP2013115289A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011261331A JP2013115289A (ja) 2011-11-30 2011-11-30 半導体装置、半導体装置の製造方法、および電子機器
US13/671,130 US8853852B2 (en) 2011-11-30 2012-11-07 Semiconductor apparatus and electronic equipment
CN201210483705.4A CN103137636B (zh) 2011-11-30 2012-11-23 半导体装置、半导体装置制造方法及电子设备

Applications Claiming Priority (1)

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JP2011261331A JP2013115289A (ja) 2011-11-30 2011-11-30 半導体装置、半導体装置の製造方法、および電子機器

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JP2013115289A true JP2013115289A (ja) 2013-06-10
JP2013115289A5 JP2013115289A5 (enExample) 2014-12-25

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US (1) US8853852B2 (enExample)
JP (1) JP2013115289A (enExample)
CN (1) CN103137636B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014072296A (ja) * 2012-09-28 2014-04-21 Canon Inc 半導体装置
KR20150016078A (ko) * 2013-08-01 2015-02-11 가부시끼가이샤 도시바 고체 촬상 장치 및 고체 촬상 장치의 제조 방법
JP2015029047A (ja) * 2013-07-05 2015-02-12 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
WO2015170628A1 (ja) * 2014-05-09 2015-11-12 ソニー株式会社 固体撮像装置および電子機器
JP2016225470A (ja) * 2015-05-29 2016-12-28 株式会社東芝 半導体デバイスの製造方法
WO2019069559A1 (ja) * 2017-10-03 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US10658413B2 (en) 2017-12-26 2020-05-19 Samsung Electronics Co., Ltd. Semiconductor device including via plug

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JP6012262B2 (ja) 2012-05-31 2016-10-25 キヤノン株式会社 半導体装置の製造方法
JP6041607B2 (ja) 2012-09-28 2016-12-14 キヤノン株式会社 半導体装置の製造方法
US9356066B2 (en) 2013-03-15 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for stacked device and method
DE102014204647A1 (de) * 2014-03-13 2015-09-17 Robert Bosch Gmbh Optische Erfassungsvorrichtung und Verfahren zum Herstellen einer optischen Erfassungsvorrichtung
US9536920B2 (en) 2014-03-28 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensor having a barrier layer
CN103985725B (zh) * 2014-06-03 2017-03-08 豪威科技(上海)有限公司 半导体结构及其制备方法
US10164141B2 (en) * 2014-07-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with damage reduction
US10601125B2 (en) * 2014-07-23 2020-03-24 Georgia Tech Research Corporation Electrically short antennas with enhanced radiation resistance
CN104733381A (zh) * 2015-03-31 2015-06-24 武汉新芯集成电路制造有限公司 一种晶圆硅穿孔互连工艺
CN104766828B (zh) * 2015-03-31 2017-08-04 武汉新芯集成电路制造有限公司 晶圆三维集成的方法
TWI692859B (zh) * 2015-05-15 2020-05-01 日商新力股份有限公司 固體攝像裝置及其製造方法、以及電子機器
US12087629B2 (en) * 2015-05-18 2024-09-10 Adeia Semiconductor Technologies Llc Through-dielectric-vias (TDVs) for 3D integrated circuits in silicon
CN104952843B (zh) * 2015-07-01 2017-08-08 武汉新芯集成电路制造有限公司 物联网系统芯片及其制备方法
CN106611756A (zh) * 2015-10-26 2017-05-03 联华电子股份有限公司 晶片对晶片对接结构及其制作方法
US10297631B2 (en) * 2016-01-29 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Metal block and bond pad structure
ES2911193T3 (es) * 2017-04-27 2022-05-18 Allied Vision Tech Gmbh Dispositivo para la captura de datos
CN109148275A (zh) * 2018-08-28 2019-01-04 武汉新芯集成电路制造有限公司 半导体器件及其制作方法
KR20220017626A (ko) * 2020-08-05 2022-02-14 삼성전자주식회사 이미지 센서
KR102887278B1 (ko) * 2020-12-17 2025-11-17 삼성전자주식회사 이미지 센서

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1295776C (zh) * 2003-12-24 2007-01-17 上海宏力半导体制造有限公司 可分别对双镶嵌工艺的中介窗与沟槽进行表面处理的方法
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器

Cited By (17)

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Publication number Priority date Publication date Assignee Title
US10229948B2 (en) 2012-09-28 2019-03-12 Canon Kabushiki Kaisha Semiconductor apparatus
JP2014072296A (ja) * 2012-09-28 2014-04-21 Canon Inc 半導体装置
US9520430B2 (en) 2013-07-05 2016-12-13 Sony Corporation Solid state imaging apparatus, production method thereof and electronic device
US11532762B2 (en) 2013-07-05 2022-12-20 Sony Corporation Solid state imaging apparatus, production method thereof and electronic device
JP2015029047A (ja) * 2013-07-05 2015-02-12 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9871148B2 (en) 2013-07-05 2018-01-16 Sony Corporation Solid state imaging apparatus, production method thereof and electronic device
US9214488B2 (en) 2013-08-01 2015-12-15 Kabushiki Kaisha Toshiba Solid state imaging device
KR101579372B1 (ko) * 2013-08-01 2015-12-21 가부시끼가이샤 도시바 고체 촬상 장치 및 고체 촬상 장치의 제조 방법
KR20150016078A (ko) * 2013-08-01 2015-02-11 가부시끼가이샤 도시바 고체 촬상 장치 및 고체 촬상 장치의 제조 방법
US9911768B2 (en) 2014-05-09 2018-03-06 Sony Corporation Solid state imaging device and electronic apparatus
WO2015170628A1 (ja) * 2014-05-09 2015-11-12 ソニー株式会社 固体撮像装置および電子機器
JP2016225470A (ja) * 2015-05-29 2016-12-28 株式会社東芝 半導体デバイスの製造方法
WO2019069559A1 (ja) * 2017-10-03 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JPWO2019069559A1 (ja) * 2017-10-03 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7175905B2 (ja) 2017-10-03 2022-11-21 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US11902696B2 (en) 2017-10-03 2024-02-13 Sony Semiconductor Solutions Corporation Infrared imaging device including drive and signal lines configured to electrically connect first and second substrates
US10658413B2 (en) 2017-12-26 2020-05-19 Samsung Electronics Co., Ltd. Semiconductor device including via plug

Also Published As

Publication number Publication date
US8853852B2 (en) 2014-10-07
CN103137636A (zh) 2013-06-05
CN103137636B (zh) 2018-05-11
US20130134576A1 (en) 2013-05-30

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