JP2013114441A5 - - Google Patents

Download PDF

Info

Publication number
JP2013114441A5
JP2013114441A5 JP2011259796A JP2011259796A JP2013114441A5 JP 2013114441 A5 JP2013114441 A5 JP 2013114441A5 JP 2011259796 A JP2011259796 A JP 2011259796A JP 2011259796 A JP2011259796 A JP 2011259796A JP 2013114441 A5 JP2013114441 A5 JP 2013114441A5
Authority
JP
Japan
Prior art keywords
data
cache
cache line
standby state
nonvolatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011259796A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013114441A (ja
JP5803614B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011259796A priority Critical patent/JP5803614B2/ja
Priority claimed from JP2011259796A external-priority patent/JP5803614B2/ja
Priority to US13/681,999 priority patent/US9251057B2/en
Priority to CN201210479284.8A priority patent/CN103136119B/zh
Publication of JP2013114441A publication Critical patent/JP2013114441A/ja
Publication of JP2013114441A5 publication Critical patent/JP2013114441A5/ja
Application granted granted Critical
Publication of JP5803614B2 publication Critical patent/JP5803614B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011259796A 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム Expired - Fee Related JP5803614B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011259796A JP5803614B2 (ja) 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム
US13/681,999 US9251057B2 (en) 2011-11-29 2012-11-20 Nonvolatile cache memory, processing method of nonvolatile cache memory, and computer system
CN201210479284.8A CN103136119B (zh) 2011-11-29 2012-11-22 非易失性高速缓冲存储器、其处理方法以及计算机系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011259796A JP5803614B2 (ja) 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム

Publications (3)

Publication Number Publication Date
JP2013114441A JP2013114441A (ja) 2013-06-10
JP2013114441A5 true JP2013114441A5 (enExample) 2014-11-20
JP5803614B2 JP5803614B2 (ja) 2015-11-04

Family

ID=48467940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011259796A Expired - Fee Related JP5803614B2 (ja) 2011-11-29 2011-11-29 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム

Country Status (3)

Country Link
US (1) US9251057B2 (enExample)
JP (1) JP5803614B2 (enExample)
CN (1) CN103136119B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9703704B2 (en) * 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6130750B2 (ja) 2013-07-16 2017-05-17 株式会社東芝 メモリ制御回路およびプロセッサ
JP6275427B2 (ja) * 2013-09-06 2018-02-07 株式会社東芝 メモリ制御回路およびキャッシュメモリ
WO2015057828A1 (en) * 2013-10-15 2015-04-23 Mill Computing, Inc. Computer processor employing cache memory storing backless cache lines
JP6030085B2 (ja) * 2014-03-20 2016-11-24 株式会社東芝 キャッシュメモリおよびプロセッサシステム
US9042160B1 (en) * 2014-07-03 2015-05-26 Sandisk Technologies Inc. Memory device with resistive random access memory (ReRAM)
US9105333B1 (en) * 2014-07-03 2015-08-11 Sandisk Technologies Inc. On-chip copying of data between NAND flash memory and ReRAM of a memory die
KR102131337B1 (ko) * 2014-10-20 2020-07-07 한국전자통신연구원 고장 제어 기능을 구비한 캐시 메모리
US9349952B1 (en) 2014-12-08 2016-05-24 Sony Corporation Methods for fabricating a memory device with an enlarged space between neighboring bottom electrodes
WO2017095429A1 (en) * 2015-12-03 2017-06-08 Hitachi, Ltd. Method and apparatus for caching in software-defined storage systems
CN105677258A (zh) * 2016-02-23 2016-06-15 浪潮(北京)电子信息产业有限公司 一种日志数据管理方法及系统
US10761819B2 (en) * 2016-02-23 2020-09-01 Intel Corporation Optimizing structures to fit into a complete cache line
US10262721B2 (en) 2016-03-10 2019-04-16 Micron Technology, Inc. Apparatuses and methods for cache invalidate
CN106406767A (zh) * 2016-09-26 2017-02-15 上海新储集成电路有限公司 一种非易失性双列直插式存储器及存储方法
US10289551B2 (en) * 2017-05-11 2019-05-14 Western Digital Technologies, Inc. Preserving data upon a power shutdown
KR20200004119A (ko) * 2018-07-03 2020-01-13 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
US10447278B1 (en) 2018-07-17 2019-10-15 Northrop Grumman Systems Corporation JTL-based superconducting logic arrays and FPGAs
US10818346B2 (en) 2018-09-17 2020-10-27 Northrop Grumman Systems Corporation Quantizing loop memory cell system
US11211117B2 (en) 2019-01-24 2021-12-28 Northrop Grumman Systems Corporation Ferrimagnetic/ferromagnetic exchange bilayers for use as a fixed magnetic layer in a superconducting-based memory device
US11024791B1 (en) 2020-01-27 2021-06-01 Northrop Grumman Systems Corporation Magnetically stabilized magnetic Josephson junction memory cell
US12027196B2 (en) 2021-07-08 2024-07-02 Kioxia Corporation Memory system, control method, and power control circuit
TWI816285B (zh) * 2021-07-08 2023-09-21 日商鎧俠股份有限公司 記憶體系統、控制方法及電力控制電路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW576966B (en) * 2000-06-23 2004-02-21 Intel Corp Non-volatile cache integrated with mass storage device
KR100598379B1 (ko) * 2003-09-08 2006-07-06 삼성전자주식회사 컴퓨터 시스템 및 그 제어방법
US20050251617A1 (en) * 2004-05-07 2005-11-10 Sinclair Alan W Hybrid non-volatile memory system
US7299314B2 (en) * 2003-12-31 2007-11-20 Sandisk Corporation Flash storage system with write/erase abort detection mechanism
JP2007041798A (ja) * 2005-08-02 2007-02-15 Seiko Epson Corp 情報処理装置及び情報処理装置のメモリ書き換え方法
CN100456253C (zh) * 2005-12-28 2009-01-28 英业达股份有限公司 存储系统的高速缓存数据的保护方法
WO2009028298A1 (ja) 2007-08-31 2009-03-05 Tokyo Institute Of Technology スピン注入磁化反転ｍｔｊを用いた不揮発性ｓｒａｍ／ラッチ回路
JP5142685B2 (ja) * 2007-11-29 2013-02-13 株式会社東芝 メモリシステム
JP5579431B2 (ja) * 2009-12-28 2014-08-27 株式会社日立製作所 ソリッド・ステート・ドライブ装置および平準化管理情報の退避・回復方法
JP2011150653A (ja) 2010-01-25 2011-08-04 Renesas Electronics Corp マルチプロセッサシステム
US8495300B2 (en) * 2010-03-03 2013-07-23 Ati Technologies Ulc Cache with reload capability after power restoration
CN101916201B (zh) * 2010-08-06 2015-05-27 中兴通讯股份有限公司 一种基于Android移动终端冷启动的方法和装置

Similar Documents

Publication Publication Date Title
JP2013114441A5 (enExample)
TWI500039B (zh) 輸出經錯誤校正碼校正之位元之資訊
US20150089287A1 (en) Event-triggered storage of data to non-volatile memory
TWI483265B (zh) 硬體動態快取電源管理
KR20120132765A (ko) 불휘발성 메모리 장치, 이의 동작 방법, 및 이를 포함하는 메모리 시스템
JP5981906B2 (ja) 画像形成装置
JP5720210B2 (ja) アクセス制御装置、誤り訂正制御方法およびストレージ装置
JP5626514B2 (ja) ストレージ装置及びストレージ装置のリビルド処理方法
US20140325122A1 (en) Nonvolatile memory system including nonvolatile memory device, memory controller and operating method thereof
KR20170052440A (ko) 복수 배열 독립 디스크 구성에서 가비지 콜렉션의 영향을 완화하는 레이드 컨트롤러 및 그것의 동작 방법
JP2012230621A (ja) メモリ装置、メモリ制御装置、メモリ制御方法
JP2010224847A5 (enExample)
CN108762797A (zh) 一种ssd固件在线更新方法、系统及ssd
JP2009301194A (ja) 半導体記憶装置の制御システム
JPWO2017002157A1 (ja) 計算機システム及び計算機システムの制御方法
US9047923B1 (en) Fast shingled tracks recording
TWI512629B (zh) 用於表格驅動之多重被動跳脫平台被動熱管理之設備及方法、計算系統及電腦可讀媒體
JP6475151B2 (ja) 半導体装置及びメモリアクセス制御方法
JP2012128846A5 (enExample)
CN103593252A (zh) 具有动态错误侦测及更正的存储器
JP6399755B2 (ja) ミラーリング装置及びその制御方法
JP2008310896A (ja) 不揮発性記憶装置、不揮発性記憶システムおよび不揮発性記憶装置の制御方法
JP2012027991A (ja) 不揮発メモリ及び記憶装置
JP6212133B2 (ja) マルチビットウェイ予測マスクを有する命令キャッシュ
CN104699574B (zh) 一种建立处理器Cache检查点的方法、装置及系统