JP2013112894A - Vacuum deposition device, electron gun, and vacuum deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum deposition device which provides uniform distribution of evaporation flow density of an evaporation material in the opposite face opposed to an object to be deposited, an electron gun used for the same, and a vacuum deposition method.SOLUTION: In the vacuum deposition device 100, an oscillation coil 62 is controlled so that electron beams B are oscillated along the contour of the upper surface 10a of an evaporation material 10 by a main controller 14 and/or an electron gun driver 59. Thus, the electron beams are uniformly incident over the entire upper surface 10a, so that evaporation flow distribution (evaporation flow density) from the upper surface 10a of the evaporation material 10 becomes uniform. As a result, stabilization of a deposition rate is achieved and uniform film thickness distribution of the vapor deposition film formed on the substrate W is achieved.

Description

  The present invention relates to a vacuum vapor deposition apparatus that performs electron beam vapor deposition, an electron gun used in the vacuum vapor deposition apparatus, and a vapor deposition method therefor.

  The vacuum deposition method is used in a wide range of fields as a method for efficiently forming a thin film. An electron beam, resistance heating, induction heating, an ion beam, or the like is used as a heating source for evaporating a material for forming a thin film (called an evaporation material or an evaporation material). Heating by an electron beam is applied to many materials such as refractory metals and oxides, and in the case of a heating method by an electron beam, there is little contamination due to an evaporation material, a crucible or the like. For these reasons, the electron beam heating method is often used when forming a thin film used in an electronic device.

  The electron gun apparatus used for electron beam evaporation described in Patent Document 1 controls the trajectory of the electron beam (8) by the deflection coil (3) and the trajectory of the electron beam (8) by the scanning coil (5). The control apparatus (21) which performs is provided. The electron beam (8) incident on the deposition material (7) to be irradiated with the electron beam by the combination of the current values of the deflection coil (3) and the scanning coil (5) set by the control device (21). ) Is determined. By controlling the incident angle of the electron beam in this way, the melting marks of the vapor deposition material are averaged (see, for example, paragraphs [0005] to [0009] and [0033] of Patent Document 1). .

JP 2010-163668 A

  As described above, the vacuum evaporation apparatus that performs electron beam evaporation is required to evaporate the evaporation material as uniformly as possible. In particular, when the distribution of the evaporation flow density generated from the facing surface of the evaporation material is not uniform within the facing surface facing the deposition object such as a substrate, the film thickness distribution of the film deposited on the deposition object May become non-uniform and the film formation rate may become unstable.

  In view of the circumstances as described above, an object of the present invention is to provide a vacuum evaporation apparatus capable of making the distribution of the evaporation flow density uniform within the facing surface of the evaporation material facing the object to be evaporated, and the electrons used in this. It is to provide a gun and a deposition method thereof.

In order to achieve the above object, a vacuum deposition apparatus according to the present invention includes an object holding mechanism, a material holding mechanism, an electron gun, and a control unit.
The object holding mechanism holds an object to be deposited.
The material holding mechanism holds the evaporation material so as to face the object held by the object holding mechanism.
The electron gun includes a generation source that generates an electron beam and a oscillating device that oscillates the generated electron beam, and emits the oscillating electron beam.
The control unit swings the electron beam according to the outer shape of the facing surface of the evaporation material held by the material holding mechanism that faces the object held by the object holding mechanism. Controls a rocker of the electron gun.

An electron gun according to an aspect of the present invention includes an object holding mechanism that holds an object to be deposited and a material holding mechanism that holds an evaporation material so as to face the object held by the object holding mechanism. The electron gun used for the vacuum evaporation system provided with.
The electron gun includes a generation source that generates an electron beam and a rocker that rocks the generated electron beam. The electron gun swings the electron beam according to the outer shape of the facing surface of the evaporation material held by the material holding mechanism that faces the object held by the object holding mechanism. And a controller for controlling the oscillator of the electron gun.

The vacuum evaporation method which concerns on one form of this invention includes hold | maintaining an evaporation material so as to oppose the vapor deposition target object hold | maintained in the predetermined position.
The evaporating material is irradiated with the electron beam using an electron gun having an oscillator that oscillates the generated electron beam.
The oscillating device of the electron gun is controlled so that the electron beam oscillates according to the outer shape of the opposed surface of the retained evaporation material facing the retained object.

  As described above, according to the present invention, the distribution of the evaporation flow density can be made uniform in the facing surface of the evaporation material that faces the object to be vapor-deposited.

FIG. 1 is a diagram schematically showing a configuration of a vacuum vapor deposition apparatus according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing the configuration of the electron gun. FIGS. 3A and 3B are graphs each showing an oscillation pattern of an electron beam having an amplitude direction in one direction (X-axis direction) and a direction orthogonal to the one direction (Y-axis direction). FIG. 4 is a diagram schematically showing a scanning locus of the electron beam oscillating according to this oscillation pattern on the upper surface of the evaporation material. 5A to 5D are photographs related to Example 1. FIG. FIG. 6A is a graph showing an oscillation pattern of the electron gun in the reference example. 6B to 6D are photographs related to the reference example. FIG. 7 is a schematic diagram showing a cross section of the evaporation material on which the skull is formed. FIG. 8 is a graph showing the relationship between the evaporation time and the film formation rate when the Mo film formation rate is set to be constant at 100 angstrom / second in Example 1 and the reference example. FIG. 9 is a diagram showing a vacuum evaporation apparatus according to the second embodiment of the present invention. FIG. 10 is a graph showing the relationship between the power applied to the electron gun and the film formation rate obtained in this experiment related to the second embodiment. FIG. 11 is a diagram illustrating a method of irradiating an evaporation material with an electron beam according to a conventional method. FIG. 12 is a table showing characteristics such as melting points and boiling points of various evaporation materials. FIG. 13 is a graph showing the result of measuring the number of occurrences of splash, which is a comparison between Example 2 and the reference example. FIG. 14 is a schematic diagram showing a configuration of a vacuum evaporation apparatus according to the third embodiment of the present invention. FIG. 15 is a diagram for explaining a fourth embodiment of the present invention. FIG. 16: is typical sectional drawing which shows the structure of the vacuum evaporation system which concerns on the 5th Embodiment of this invention. FIG. 17: is typical sectional drawing which shows the structure of the vacuum evaporation system which concerns on the 6th Embodiment of this invention. 18A to 18C are schematic cross-sectional views showing the configuration and operation of a vacuum evaporation apparatus according to the seventh embodiment of the present invention. FIG. 19 is a view for explaining an eighth embodiment of the present invention, and is a view for explaining an electron beam irradiation method. 20A to 20C are graphs and photographs of experiments related to the eighth embodiment. FIG. 21 is a diagram for explaining a ninth embodiment of the present invention and a diagram for explaining a vapor deposition process. 22A and 22B are diagrams showing waveforms of electron beams oscillated by the oscillating coil in the X and Y axes. FIG. 23 is a cross-sectional view showing a state in which an electron beam is irradiated onto a material arranged in a water-cooled crucible.

  As described above, the control unit swings the electron beam according to the outer shape of the facing surface of the evaporation material held by the material holding mechanism that faces the object held by the object holding mechanism. The oscillator of the electron gun is controlled so as to be moved. Since the electron beam is swung by the rocker according to the outer shape of the facing surface facing the object, the electron beam is uniformly incident on the entire facing surface. Therefore, the evaporation flow distribution from the opposing surface of the evaporation material can be made uniform.

  The control unit may control the oscillator so that an envelope connecting the amplitudes of the electron beams that are oscillated by the oscillator follows the outer shape of the facing surface of the evaporation material.

  The material holding mechanism may include a hearth that holds the evaporation material. The hearth may be a bottomed hearth. Alternatively, the hearth may be a ring-shaped hearth having a hole for holding the evaporation material. The hearth may include a cooling unit that cools the hearth.

  The vacuum evaporation apparatus may further include a reflector disposed in a non-contact manner on the evaporating material on at least a part around a side surface of the evaporating material held by the material holding mechanism. Thereby, the loss by the energy discharge | released by radiation from the side surface of evaporation material can be suppressed.

  The vacuum evaporation apparatus may further include a cooling mechanism disposed in a non-contact manner with respect to the evaporation material at least at a part around the side surface of the evaporation material held by the material holding mechanism. Since the cooling mechanism cools the evaporating material in a non-contact manner, energy loss due to heat conduction can be eliminated as compared with a method in which the evaporating material is cooled in contact with the evaporating material.

  The material holding mechanism may include a support portion that supports a lower portion of the evaporation material. In that case, the said vacuum evaporation system may further comprise the heating mechanism arrange | positioned under the said support part. Thereby, the difference between the temperature near the support portion and the temperature near the chamber facing the support portion can be reduced. Therefore, loss of energy due to heat conduction from the evaporation material and the support portion to the chamber side can be reduced.

  The vacuum evaporation apparatus may further include an elevating mechanism that elevates and lowers the evaporation material held by the material holding mechanism. Thereby, the height position of the opposing surface of the evaporation material can be kept constant, and a plurality of evaporation materials can be continuously supplied as will be described later, and various merits can be obtained.

  The elevating mechanism may include a mechanism for holding and elevating a second evaporating material waiting in a lower portion of the first evaporating material held by the material holding mechanism among a plurality of evaporating materials. In that case, the elevating mechanism raises the first evaporation material by bringing the upper portion of the second evaporation material into contact with the lower portion of the first evaporation material and pushing up the first evaporation material. Thereby, a plurality of evaporation materials can be processed continuously, and the continuous processing time of the vapor deposition process can be extended. Thereby, the productivity of the object is improved.

  The control unit has a power or power density higher than the power or power density of an electron beam incident on an inner region surrounded by an edge region that forms the outer shape of the facing surface of the evaporation material, and the electron in the edge region. The electron gun may be controlled so that the beam is incident. Thereby, evaporation of the edge area | region of the opposing surface of an evaporation material which is easy to solidify can be accelerated | stimulated.

  As the evaporation material, an evaporation material having a difference between a melting point and a boiling point within 300 ° C. may be used. For example, molybdenum is used as the evaporation material.

  The evaporating material may have a cylindrical shape or a partial conical shape.

  The electron gun may be a piercing electron gun. According to the pierce-type electron gun, the position control of the swing of the electron beam by the swinger can be performed with high accuracy.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  [First embodiment]

  FIG. 1 is a diagram schematically showing a configuration of a vacuum vapor deposition apparatus 100 according to the first embodiment of the present invention.

  The vacuum deposition apparatus 100 includes a chamber 13, a material holding mechanism 15, an elevating mechanism 11, a main controller 14, and an electron gun 50.

  The chamber 13 is a vacuum chamber configured to be maintained in a vacuum, and a vacuum pump (not shown) is connected to the chamber 13.

  On the upper part of the chamber wall 13a of the chamber 13, a transfer device 20 is mounted for transferring the substrate W as an evaporation target in the horizontal direction. The transport device 20 includes a carrier 25 that can hold the substrate W and is configured to be movable in the horizontal direction. The carrier 25 functions as an object holding mechanism. An opening 26 is formed in the upper portion of the chamber wall 13 a, and the substrate W held by the carrier 25 is opposed to the inside of the chamber 13 through the opening 26.

  When the vapor deposition process on the substrate W held by the carrier 25 is completed, the transfer device 20 horizontally moves the carrier 25 for the next process, and holds the substrate W to be processed next by the carrier 25. Then, it is opposed to the opening 26. That is, the vacuum deposition apparatus 100 is an inline type apparatus. A plurality of carriers 25 may be provided.

  The substrate W is a glass substrate used for an FPD (Flat Panel Display) or a solar panel. Alternatively, the FPD includes, for example, liquid crystal, EL (Electro-Luminescence), FED (Field Emission Display), SED (Surface-conduction Electron-emitter Display), and the like. The substrate W may be a semiconductor substrate used for a semiconductor device.

  The material holding mechanism 15 is disposed in the lower part of the chamber 13 so as to hold the evaporation material 10 and face the substrate W held by the carrier 25 of the transfer device 20. The evaporating material 10 has a cylindrical shape, for example. The material holding mechanism 15 includes, for example, a ring-shaped hearth 16 that holds the upper side surface of the columnar evaporation material 10 and a support portion 17 that holds and supports the lower portion of the evaporation material 10.

  A ring-shaped hearth (hereinafter simply referred to as “hearth”) 16 holds the evaporation material 10 in the hole. The outer shape of the hearth 16 viewed from the plane may be a circle, a polygon of triangles or more, or a combination thereof. Inside the hearth 16, a refrigerant flow path 18 through which a refrigerant is passed is provided as a cooling part for cooling the hearth 16. The refrigerant flow path 18 is formed along the ring shape of the hearth 16, for example.

  Water or oil is used as the refrigerant. As a cooling part, the structure provided in the circumference | surroundings of a hearth like a cooling jacket may be sufficient.

  As the material of the hearth 16, copper (Cu) is typically used, but can be appropriately changed according to the evaporation material 10 used. As the evaporation material 10, tungsten (W), tantalum (Ta), molybdenum (Mo), or the like is used, but is not limited thereto. For example, Mo is used as a material for forming an electrode of an FEA (Field Emitter array).

  The support portion 17 of the material holding mechanism 15 is connected to the lifting mechanism 11. By the lifting and lowering operation of the support portion 17 by the lifting mechanism 11, the evaporating material 10 whose posture is held by the hearth 16 moves so as to be lifted and lowered. The elevating mechanism 11 is configured by a mechanism such as a ball screw, a rack and pinion, or a fluid pressure cylinder.

  The material of the support part 17 may be the same material as the evaporation material 10 used. As a result, even if the electron beam B is emitted from the electron gun 50 in a state where the evaporation material 10 has been used up due to an operation error or the like (all the evaporation material 10 has been evaporated), Therefore, contamination in the chamber 13 can be prevented.

  As a member constituting a part of the material holding mechanism 15, for example, another holding member that holds at least a part of the side surface of the evaporation material 10 may be provided below the hearth 16. As the holding member, for example, a guide member that guides the movement of the evaporating material 10 when the evaporating material 10 is raised and lowered by the elevating mechanism 11 may be provided.

  The electron gun 50 is connected to the side of the chamber 13. The electron gun 50 emits an electron beam B into the chamber 13. The emitted electron beam B is incident on the upper surface of the evaporation material 10 held by the material holding mechanism 15 by bending the trajectory thereof by the deflection coil 12 provided in the chamber 13. The upper surface (10 a) of the evaporation material 10 is a facing surface that faces the substrate W held by the carrier 25.

  The main controller 14 is basically composed of a computer having hardware such as a CPU (Central Processing Unit), a RAM (Random Access Memory), and a ROM (Read Only Memory).

  FIG. 2 is a cross-sectional view schematically showing the configuration of the electron gun 50.

  This electron gun 50 is a piercing electron gun 50. The electron gun 50 includes a filament 55, a cathode 56, a Wehnelt 57, an anode 58, and a beam focusing unit 60 in order from the upstream side in the traveling direction of the electron beam B. The electron gun 50 is connected to an electron gun driver 59. A filament power supply 53 is connected to the filament 55. A cathode power source 52 is connected between the cathode 56 and the filament power source 53.

  The filament 55, the cathode 56, Wehnelt 57, the anode 58, and the beam focusing unit 60 are accommodated in a casing 65. The casing 65 can be evacuated by the vacuum pump 22. An opening 65a is formed at one end of the casing 65, and an opening 13b is also formed at a part of the side wall of the chamber wall 13a. The casing 65 and the chamber wall 13a are connected so that these openings are connected to each other. Thereby, the inside of the casing 65 and the inside of the chamber 13 communicate.

  When the filament 55 is energized by the filament power supply 53, the filament 55 is heated, whereby the filament 55 generates thermoelectrons. An electric field is formed between the cathode 56 and the filament 55 by the cathode power source 52, and the thermoelectrons generated by the filament 55 are accelerated and collide with the cathode 56. The cathode 56 is heated by the collision of the thermoelectrons and the radiant heat from the filament 55, and the thermoelectrons are emitted from the surface of the cathode 56. The thermoelectrons thus emitted become an electron beam B. The filament 55, the cathode 56, and the anode 58 are sources of the electron beam B.

  The Wehnelt 57 (beam forming electrode) disposed at the peripheral edge of the cathode 56 controls the electrons emitted from the cathode 56 with an electric field and focuses the electrons. The Wehnelt 57 is formed in a ring shape, for example. An electric field is formed between the cathode 56 and the anode 58 by the accelerating power source 51, whereby the thermal electrons from the cathode 56 are accelerated toward the anode 58 through the Wehnelt 57.

  The beam focusing unit 60 includes a cylindrical flow register 63, a focusing coil 61 (focus coil) disposed around the flow register 63, and a swing coil 62. The flow register 63 and the focusing coil 61 form a beam diameter of the electron beam B. The beam diameter is set to be sufficiently smaller than the diameter of the upper surface 10 a of the evaporation material 10.

  The oscillating coil 62 functions as an oscillator that oscillates the electron beam B within a predetermined amplitude range. The main controller 14 arbitrarily controls the magnetic field generated by the oscillating coil 62 by controlling the current or voltage applied to the oscillating coil 62, thereby oscillating the electron beam B in various oscillating patterns. be able to.

  The electron gun driver 59 drives the power sources 51 to 53, the focusing coil 61, the swing coil 62, and the like. For example, the electron gun driver 59 applies a predetermined current or voltage to the focusing coil 61 and the oscillating coil 62 in accordance with a control signal from the main controller 14.

  The frequency of the oscillation pattern, the frequency difference in the biaxial direction, and the like are appropriately set according to the melting point of the evaporation material 10, the thermal conductivity, the relationship between the dissolution temperature / evaporation temperature, the continuous operation time of the vacuum deposition apparatus 100, and the like. Can be done.

  An ion collector 54 is disposed in the vicinity of the filament 55. When the electron beam B is irradiated from the electron gun 50 toward the chamber 13, the electron beam B collides with the internal gas of the chamber 13 to generate ions. Some of the generated ions may flow backward toward the cathode 56 of the electron gun 50. The ion collector 54 has a function of collecting these ions.

  The operation of the vacuum deposition apparatus 100 configured as described above will be described.

  As described above, the electron gun 50 emits the electron beam B by turning on the power from the filament power supply 53, the cathode power supply 52, and the acceleration power supply 51. The emitted electron beam B is bent by the deflection coil 12 as shown in FIG. 1 and enters the upper surface 10 a of the evaporation material 10 held by the material holding mechanism 15. Thereby, the evaporation material 10 is heated.

  As described above, the main controller 14 or the electron gun driver 59 controls the magnetic field generated by the swing coil 62 to swing the electron beam B according to a predetermined swing pattern. In this case, at least one of the main controller 14 and the electron gun driver 59 functions as a control unit. When the evaporating material 10 irradiated with the electron beam B reaches a predetermined temperature, it is dissolved or sublimated, and the evaporated evaporating material 10 is deposited on the surface of the opposing substrate W to form a thin film.

  The main controller 14 sends a control signal to a driver (not shown) that controls the operation of the elevating mechanism 11, so that the driver controls the elevating operation of the support portion 17. For example, the driver positions the support portion 17 in the standby position (initial position), and the height position of the support portion 17 so that the upper surface 10a of the evaporation material 10 is maintained at a constant height during the vapor deposition process. To control.

  In the latter case, the driver may perform the ascending operation of the support portion 17 periodically or continuously in order to keep the height position of the upper surface 10a of the evaporation material 10 constant. The period or speed of the ascending operation may be set by the main controller 14 based on conditions such as the film forming rate, the power of the electron beam B, or the type (material type and size thereof) of the evaporation material 10, for example. . The main controller 14 may include a program for the user to input those conditions to the main controller 14.

  Here, FIGS. 3A and 3B are graphs respectively showing oscillation patterns of the electron beam B with the amplitude direction in one direction (X-axis direction) and the direction orthogonal to the one direction (Y-axis direction). That is, these amplitudes correspond to the amplitude of the electron beam B on the upper surface 10 a of the evaporation material 10. These waveforms are, for example, triangular waves. The horizontal axis of these graphs is time.

  FIG. 4 is a diagram schematically showing a scanning locus of the electron beam oscillating according to this oscillating pattern on the upper surface 10 a of the evaporation material 10. 3A and 3B, the X and Y axis directions coincide with the X and Y axis directions of the two-dimensional coordinates that determine the position of the upper surface 10a of the evaporation material 10 shown in FIG. As shown in FIG. 3A, this rocking pattern is a pattern in which the electron beam B moves according to the outer shape of the upper surface 10a of the evaporation material 10. Specifically, an envelope connecting the amplitudes of the oscillations of the electron beam B is formed along the outer shape of the upper surface of the evaporation material 10. In the present embodiment, the evaporation material 10 is formed in a columnar shape, and since the upper surface 10a is circular, the envelope is circular. When the evaporating material 10 is a quadrangular prism, the envelope may be formed in a quadrangle in accordance with the quadrangle of the upper surface 10a.

  3A and 3B, the oscillation frequency in the Y-axis direction is smaller than the oscillation frequency in the X-axis direction. By doing so, as shown in FIG. 4, for example, the first electron beam scanning trajectory (shown by a solid line) and the second electron beam scanning trajectory (shown by a broken line) are two-dimensionally different. Thus, interference can be prevented. For example, when the oscillation frequency in the X-axis direction is set to 300 to 700 Hz, the oscillation frequency in the Y-axis direction is set to 100 to 400 Hz.

  The maximum amplitude value in the X-axis direction and the maximum amplitude value in the Y-axis direction may be the same or different.

  In FIGS. 3A, 3B, and 4, the locus of the electron beam is schematically drawn for easy understanding, and this figure corresponds to a state where the frequency is relatively low. When the oscillation frequency is in the above range (X-axis direction: 300 to 700 Hz, Y-axis direction: 100 to 400 Hz), the shape of the electron beam trajectory is as shown in the photograph of FIG. 5A described later. The shape corresponds to the waveform.

  Note that the swing pattern of the electron beam by the swing coil 62 may be set by the user in the function generator provided in the main controller 14.

  As described above, in the vacuum vapor deposition apparatus 100 according to the present embodiment, the main controller 14 and / or the electron gun driver 59 swings the electron beam B so as to swing according to the outer shape of the upper surface 10a of the evaporation material 10. The moving coil 62 is controlled. Thereby, the electron beam is uniformly incident on the entire upper surface 10a. Therefore, the evaporation flow distribution (evaporation flow density) from the upper surface 10a of the evaporation material 10 can be made uniform. As a result, the film formation rate can be stabilized, and the film thickness distribution of the deposited film formed on the substrate W can be made uniform.

  As a reference explanation, FIG. 23 is a sectional view showing a crucible. The crucible 901 accommodates the evaporation material 903, and the evaporation material 903 is irradiated with the electron beam B1. Note that the crucible 901 shown in this figure has a water-cooling cooling unit 902.

(Comparison between Example 1 corresponding to the first embodiment and Reference Example)
The inventor used this vacuum deposition apparatus 100 to perform deposition on the substrate W under the following conditions.

<Conditions of Example 1 of the present technology (example corresponding to the first embodiment)>
・ Evaporation material: Mo, cylindrical shape with a diameter of 50.8mm (2 inches), height 250mm ・ Heath: Material is Cu, water-cooled ・ Electron gun: 60kW Pierce-type electron gun, acceleration voltage 30kV, emission current (from cathode 56) Discharged current) 2A
-Swing frequency of swing coil: X-axis direction 500Hz, Y-axis direction 222Hz
-Swing pattern of electron beam by swing coil: Pattern formed so that the envelope connecting each amplitude follows the outer shape of the upper surface of the evaporation material (see FIGS. 3A, B and 4)
-The height of the evaporation surface, which is the upper surface of the evaporation material, was made constant by the lifting mechanism.

  FIG. 5A is a photograph showing the waveform of the oscillation pattern having the oscillation frequency set by the present inventor using the function generator of the main controller 14 in the first embodiment.

  FIG. 5B is a photograph showing the upper surface of the evaporation material 10 when the electron beam is irradiated in the swing pattern in the first embodiment. In this technique, it can be seen that the electron beam is uniformly incident on the entire upper surface of the evaporation material 10 and emits light uniformly.

  FIG. 5C is a photograph showing the upper surface 10a of the evaporation material 10 after the vapor deposition process according to the first embodiment. FIG. 5D is a photograph showing the side surface and the size of the evaporation material 10 after the vapor deposition treatment. 5C and D, it can be seen that the upper surface 10a of the evaporation material 10 is a uniform surface compared to the upper surface of the evaporation material shown in FIG. 6C (described later).

  As a reference example compared with Example 1, the present inventor uses the vacuum deposition apparatus 100 according to the first embodiment, and changes only the oscillation pattern of the electron beam among the conditions of Example 1 above. Then, vapor deposition was performed on the substrate W. The waveform of the oscillation pattern in this reference embodiment is, for example, a triangular wave having a constant amplitude on the time axis. The oscillation frequency in the X and Y axis directions is the same as the oscillation frequency in the above <Condition of Embodiment 1 of the present technology>.

  FIG. 6A is a graph showing a swing pattern of the electron gun 50 in the reference embodiment. The waveform of this oscillation pattern has a constant amplitude on the time axis.

  6B to 6D are photographs showing the results obtained as reference examples. FIG. 6B is a photograph showing the upper surface of the evaporation material when the electron beam is irradiated with this swing pattern. In the case of a rocking pattern having a constant amplitude on the time axis, the electron beam is irradiated only into a square surrounded by a broken line in FIG. 6B. Although it is difficult to understand in this gray scale photograph, the emission color inside the rectangle is different from the emission color outside the rectangle, which means that the material outside the rectangle is difficult to dissolve.

  FIG. 6C is a photograph showing the upper surface of the evaporated material after the vapor deposition process according to the reference example. As described above, since the irradiation range of the electron beam is a quadrangle, traces of the evaporating material dissolved are seen only within the quadrangle, and a skull (scull: residual metal) is formed on the edge forming the outer shape of the upper surface. ) Is formed in a ring shape. FIG. 6D is a photograph showing the upper surface of the evaporation material and the diameter (unit: cm) of the upper surface.

  FIG. 7 is a schematic view showing a cross section of the evaporation material 1010 on which the skull 1011 is formed in this way. When dissolution (dissolution portion 1012) proceeds to some extent from the upper surface of the evaporation material 1010, the skull 1011 is formed in this way, and the evaporation flow of the material in the oblique direction is hindered as indicated by the arrow. That is, the formation of the skull 1011 prevents diffusion of the evaporated material. Thereby, vapor deposition in a wide range becomes difficult. Further, when the skull 1011 is thin in the radial direction, the skull 1011 may fall inward or outward. For example, if the skull 1011 falls inward, the metal that was originally dissolved in the skull 1011 is mixed with the fallen solid metal, so that the evaporation surface becomes non-uniform. As a result, the evaporation rate and the film formation rate become unstable.

  In this regard, according to the first embodiment, the skull 1011 is not formed, and the electron beam is uniformly incident on the entire upper surface 10a as described above. Therefore, the evaporation flow distribution from the upper surface 10a of the evaporation material 10 can be made uniform. As a result, problems resulting from the formation of the skull 1011 can also be suppressed.

  Further, the height of the upper surface 10a of the evaporation material 10, that is, the evaporation surface can be kept constant by the elevating mechanism 11. If the hearth 16 is a ring-shaped hearth as in the present embodiment, and the hearth 16 has the refrigerant flow path 18, if the height of the evaporation surface cannot be kept constant, the following problem occurs. Occur. That is, when the contact area between the evaporating material 10 and the hearth 16 changes, the amount of heat taken by the cooling water passing through the refrigerant flow path 18 fluctuates, and the evaporation rate becomes unstable. However, in this embodiment, the height position of the opposing surface of the evaporation material 10 is kept constant by the elevating mechanism 11, so that the contact area is kept constant, and between the evaporation material 10 and the hearth 16. Heat conduction (for example, heat conduction amount per unit time) can be made constant. As a result, the evaporation rate becomes stable, and the film formation rate can be stabilized.

  FIG. 8 is a graph showing the relationship between the evaporation time and the film formation rate when the Mo film formation rate is set to be constant at 100 angstrom / second in Example 1 and the reference example. Specifically, a CRTM (quartz vibration type film thickness monitor) is installed at a position of 980 mm directly above the evaporation material (Mo), and based on the data obtained by the CRTM, the film formation rate is set to the above value. Feedback control to the gun 50 was performed. Other conditions are as follows.

Measurement time: 200 minutes Pressure in chamber 13: 2 × 10 ⁻⁴ Pa
Average power input to the electron gun in Example 1: 36 kW
Average power input to the electron gun in the reference example: 40kW

  FIG. 8 shows that the film formation rate in this embodiment is more stable than that in the reference example.

  [Second Embodiment]

  FIG. 9 is a diagram showing a vacuum evaporation apparatus according to the second embodiment of the present invention. In the following description, the same members, functions, and the like included in the vacuum vapor deposition apparatus 100 according to the embodiment shown in FIG. 1 and the like will be simplified or omitted, and different points will be mainly described.

  The vacuum deposition apparatus 200 is different from the vacuum deposition apparatus 100 according to the first embodiment in that no hearth is provided, and is the same as the vacuum deposition apparatus 100 in other points. Also. The swing pattern of the electron beam by the swing coil 62 of the electron gun 50 is the same as that in the first embodiment.

  The vacuum deposition apparatus 200 configured as described above has the same effect as that of the first embodiment, and has no energy loss due to heat conduction from the evaporation material 10 to Hearth. For this reason, the energy of the electron beam thrown from the electron gun 50 can be used effectively. In addition to the merit of high energy use efficiency, according to the second embodiment, since the hearth is not used, the evaporation rate, the evaporation flow distribution, and the film formation rate are further stabilized.

  Further, since no hearth or crucible is used, there is no loss of energy to cooling water and the like, and the energy of the electron beam can be used effectively, so that the power put into the evaporation material can be reduced. Thereby, the density of electrons and ions in the chamber 13 is reduced, and damage to the substrate W can be reduced. Moreover, since the temperature rise of the chamber wall 13a can also be suppressed, contamination to the substrate W due to the release of gas from the chamber wall 13a can be reduced. Furthermore, since the cooling water used for the hearth is not necessary, the electric power used for the chiller for cooling water can be reduced, and energy saving can be achieved.

  Hereinafter, Example 2 corresponding to the second embodiment will be compared with Example 1 described above. In Example 2, the vapor deposition process was performed under the same conditions as in Example 1 except that no hearth was provided.

  FIG. 10 is a graph showing the relationship between the power applied to the electron gun 50 and the film formation rate obtained in this experiment. The inventor calculated the film formation rate by setting the glass substrate W at a position of 980 mm immediately above the evaporation material 10 and dividing the film thickness of the film deposited on the glass substrate W by the film formation time.

  The input power for generating an electron beam by the electron gun 50 in Example 1 was 45 kW, and the film formation rate was 138 angstroms / second. In Example 2, the input power for generating an electron beam by the electron gun 50 was 28 kW in order to obtain a film formation rate of 138 angstroms / second. That is, when the evaporating material 10 is Mo and the input power for obtaining the same evaporation amount is compared between Example 1 and 2, the result is that Example 2 is 65% or less of Example 1. It was. That is, energy loss of 35% or more could be prevented. In this case, the power consumption in Examples 1 and 2 is as follows.

In the case of Example 1, it is as follows.
Power used for evaporation of the evaporation material Mo: about 2kW,
Power lost to Haas cooling water: about 32kW
Power released by radiation from the upper surface of Mo: about 6kW,
Power taken from the bottom of the Mo to the support by heat conduction: approx. 5kW

The case of Example 2 is as follows.
Power used for evaporation of the evaporation material Mo: about 2kW,
Power released by radiation from the upper surface of Mo: about 6kW,
Power released by radiation from the side of Mo: about 14kW,
Power taken from the bottom of the Mo to the support by heat conduction: approx. 6kW

Incidentally, the melting point of Mo is 2890K, and the temperature for obtaining Mo ^-5 to 10 ^-3 (g · cm ^-2 · s ^-1 ), which is a practically sufficient evaporation rate, is 2550 to 3100K. .

  As a reference explanation, FIG. 11 is a diagram showing a method of irradiating an evaporating material with an electron beam by a block method. In this method, the evaporating material 910 is used as a block, and a part of the upper surface 911a of the evaporating material 910 is melted by being irradiated with the electron beam B2, and the surrounding portion not dissolved has a crucible function. However, in this method, since the surrounding part which does not melt | dissolve is not used as a material, the use efficiency of the evaporation material 910 worsens and production cost becomes high. Further, in this method, since a part of the evaporation material 910 is evaporated, the evaporation material 910 is limited to a material having a low thermal conductivity, and when the evaporation material 910 is small, the hot water leaks (the dissolved liquid metal drips down). May occur.

  The vapor deposition process according to the second embodiment is close to this block method, but measures against hot water leakage are performed as follows. That is, a material having a difference between a melting point (melting temperature) within 300 ° C. and a boiling point (evaporation temperature) is used. This is dangerous when the difference between the melting point and the boiling point is larger than 300 ° C., because the amount of liquid increases while the material is being melted with an electron beam, and the above-described leakage of hot water may occur.

  FIG. 12 is a table showing characteristics such as melting points and boiling points of various evaporation materials. In the second embodiment, among the evaporation materials listed in this table, a material having a difference in melting point and boiling point within 300 ° C. (material marked with a double circle) is used. In addition, in the case of the vapor deposition process in which the crucible as described above or the hearth 16 according to the first embodiment is used, the problem of hot water leakage does not occur, so all the materials in the table shown in FIG. 12 can be used. .

  FIG. 13 is a graph showing the result of measuring the number of occurrences of splash, which is a comparison between Example 2 and the reference example. Splash is a phenomenon in which an electron beam is concentrated and incident on the central portion of the upper surface of the evaporation material, and the dissolved liquid scatters when the temperature of the central portion increases. In addition, the temperature of the central portion may increase, and spitting may occur in which evaporation occurs from the inside of the dissolved liquid on the upper surface.

  In this experiment, the number of splashes was measured at deposition rates of 100 Å / sec and 150 Å / sec. The film formation rate was measured by a CRTM (crystal vibration type film thickness monitor) installed at a position of 980 mm immediately above the evaporation material (Mo). In addition, the number of splashes jumping out of the evaporated material in 10 minutes was monitored and converted to the number of splashes per minute.

  From FIG. 13, in Example 2 corresponding to the second embodiment, the number of splashes decreased to 1/15 and 1/18 for each experiment at each film formation rate, compared to the reference example. This is because the input power of the electron beam for obtaining the same film formation rate is reduced as compared with the reference example. This is also because the temperature of the evaporation surface of the evaporation material has become uniform due to the fluctuation pattern of the electron beam (see FIGS. 3 and 4) characteristic of the present technology. Moreover, according to this technique, generation | occurrence | production of spitting can also be suppressed.

  By suppressing the occurrence of splash and spitting, defects (mainly defects due to particles) of the substrate W caused by this can be reduced.

  In the case of Example 2, the relationship between the input power for generating an electron beam by the electron gun 50 and the film formation rate was 100 angstrom / second at 22 kW and 150 angstrom / second at 31 kW.

  [Third embodiment]

  FIG. 14 is a schematic diagram showing a configuration of a vacuum evaporation apparatus according to the third embodiment of the present invention. In the drawings according to the subsequent embodiments, the vacuum deposition apparatus 300 is simply and schematically illustrated as shown in FIG. However, in actuality, the vacuum deposition apparatus 300 shown in FIG. 14 and the subsequent figures and the vacuum deposition apparatus 100 shown in FIG. 9 have the same configuration and function except for the parts described as different points below. Yes. A white arrow indicates that the evaporating material 10 can be raised by the elevating mechanism 11.

  The vacuum deposition apparatus 300 according to the third embodiment further includes a reflector 31 that is disposed around the side surface of the evaporation material 10 in a non-contact manner with the evaporation material 10. The reflector 31 may have a cylindrical shape or a polygonal cylindrical shape. Alternatively, the reflector 31 may be disposed at a part around the side surface of the evaporation material 10. The reflector 31 is made of a material having an appropriate melting point temperature in consideration of the melting point of the evaporation material 10.

  By providing the reflector 31, about 60% or more of the 14 kW of power released by radiation from the side surface 10 b of the evaporation material 10 can be reduced, and loss of energy can be suppressed. Moreover, this can also suppress the temperature rise of the chamber 13.

  [Fourth Embodiment]

  FIG. 15 is a diagram for explaining a fourth embodiment of the present invention.

  As an apparatus according to this embodiment, a vacuum vapor deposition apparatus 200 similar to that in FIG. 9 is used. In the present embodiment, the evaporation material 210 has a conical shape (a part thereof). The evaporation material 210 is formed to be wider toward the support portion 17 on the different side. Since the side surface 210b of the evaporation material 210 is formed obliquely, the dissolved liquid on the upper surface 210a of the evaporation material 210 can be prevented from dripping down. Therefore, more materials can be adopted as the evaporation material 210 than the evaporation material used in the apparatuses according to the first to third embodiments.

  [Fifth Embodiment]

  FIG. 16: is typical sectional drawing which shows the structure of the vacuum evaporation system which concerns on the 5th Embodiment of this invention.

  In the vacuum evaporation apparatus 400 according to the present embodiment, the cooling mechanism 36 disposed in a non-contact manner on the evaporation material 10 is provided around the side surface 10 b of the evaporation material 10 supported by the support portion 17. An opening 33a is formed in the central portion of the support base 33 that supports the cooling mechanism 36, and the evaporating material 10 held on the support portion 17 can be lifted and lowered by the lifting mechanism 11 (not shown) through the opening 33a. Has been.

  The cooling mechanism 36 has, for example, a cylindrical member 35 supported on a support base 33, and a coolant channel 34 is provided in the cylindrical member 35. For example, a plurality of refrigerant flow paths 34 are provided. The refrigerant flow path 34 is formed in a ring shape so as to circulate around the evaporating material 10 and circulates a refrigerant such as water, oil, and gas. The refrigerant flow path 34 may be formed in one spiral shape having one inlet and one outlet. As the material of the cylindrical member 35, the material of the reflector 31 may be used.

  According to such a configuration, since the cooling mechanism 36 and the evaporating material 10 are not in direct contact, energy loss due to heat conduction can be eliminated. Moreover, the temperature rise of the chamber wall 13a can also be suppressed.

  [Sixth Embodiment]

  FIG. 17: is typical sectional drawing which shows the structure of the vacuum evaporation system which concerns on the 6th Embodiment of this invention.

  In the vacuum vapor deposition apparatus 500 according to the present embodiment, a reflector 131 having a double structure is disposed around the evaporation material 10, and a heating mechanism 37 is disposed below the support base 33 or the support portion 17. As the heating mechanism 37, a ceramic heater, a carbon heater, or the like is used.

  According to such a configuration, the temperature difference between the upper part and the lower part of the evaporation material 10 is reduced, so that the temperature of the evaporation material 10 is stabilized. As a result, the evaporation rate and the film formation rate become stable.

  In an experiment using an apparatus corresponding to this embodiment, about 3 kW, which is about 50% of 6 kW of energy lost due to heat conduction, can be reduced.

  [Seventh Embodiment]

  FIG. 18A is a schematic cross-sectional view showing a configuration of a vacuum evaporation apparatus according to the seventh embodiment of the present invention.

  In the vacuum deposition apparatus 600 according to the present embodiment, a stock chamber 40 that stocks a plurality of evaporation materials 10 is connected to the chamber 13. For example, the stock chamber 40 is connected to the lower portion of the chamber 13, and the chamber 13 and the stock chamber 40 communicate with each other via an opening 41. The stock chamber 40 is connected to a vacuum pump (not shown) or the like so that a vacuum state can be maintained. Alternatively, a configuration in which a vacuum pump connected to the chamber 13 evacuates the stock chamber 40 may be employed.

  The vacuum evaporation apparatus 600 is provided with a supply mechanism (not shown) that supplies the evaporation materials 10 waiting in the stock chamber 40 to the chamber 13 one by one in order. The supply mechanism includes, for example, a horizontal transport unit that transports the evaporating material 10 waiting in the stock chamber 40 to the vicinity of the opening 41 and a vertical transport unit that moves the evaporating material 10 upward through the opening 41.

  In this vacuum vapor deposition apparatus 600, as shown in FIG. 18B, the evaporation materials 10 are in contact with each other. When the evaporating materials 10 are in contact with each other as described above, the lower evaporating material 102 (second evaporating material) held by the elevating holding member (not shown) forms a part of the material holding mechanism. The upper evaporation material 101 (first evaporation material) held by 38 (which may be a ring-shaped hearth) is supported. A holding member provided in a vertical conveyance unit (not shown) holds the lower evaporating material 102, and the upper evaporating material 101 is pushed up by raising the held evaporating material 102. Thereby, the height of the upper surface of the upper evaporation material 101 irradiated with the electron beam B can be controlled to be constant. Alternatively, instead of controlling the height of the upper surface to be constant, the elevating mechanism 11 (see FIG. 1) may raise the lower evaporation material 10 periodically. After the irradiation with the electron beam, as shown in FIG. 18C, the support of the upper evaporation material 101 by the holding mechanism 38 may be released.

  In this way, the plurality of evaporation materials 10 can be processed continuously, and the continuous processing time of the vapor deposition process can be extended. Thereby, the productivity of the substrate W is improved.

  As described above, in the second to seventh embodiments, the configuration in which the hearth is not provided is shown, but the hearth 16 may be provided as in the first embodiment.

  [Eighth embodiment]

  FIG. 19 is a view for explaining an eighth embodiment of the present invention, and is a view for explaining an electron beam irradiation method. The apparatus used in the present embodiment may be any of the vacuum vapor deposition apparatuses according to the first to seventh aspects.

  The main controller 14 uses the edge region 10e of the upper surface 10a of the evaporation material 10 and the power of the electron beam incident on the inner region 10f other than the edge region 10e and surrounded by the edge region e. Change the density (aperture power density). Specifically, the main controller 14 can change the power density of the electron beam by controlling the current or voltage applied to the focusing coil 61.

  For example, it is assumed that the main controller 14 swings the electron beam using the triangular wave swing pattern (FIGS. 3A and 3B) in the first embodiment. In this case, the electron gun driver 59 sets the power density to the first value when the electron beam of the triangular wave enters the internal region 10f of the upper surface 10a, and the electron beam enters the edge region 10e. When doing so, the power density is set to a second value higher than the first. The ratio between the first value and the second value can be appropriately designed.

  Thus, by changing the power density according to the region of the upper surface 10a, it is possible to promote the evaporation of the edge region 10e that is easily solidified in the upper surface 10a. In particular, when a hearth or a crucible is used, heat conduction from the evaporation material 10 to the hearth or the crucible increases, so that the edge region 10e is easily solidified. Therefore, this embodiment is particularly effective when a hearth or a crucible is used.

  FIG. 20A is a graph showing the relationship between the current value of the focusing coil 61 (see FIG. 2) and the diameter of the electron beam in a piercing electron gun. In the experiment related to this graph, the current value of the electron beam is 400 mA, and the path length of the electron beam is 700 mm. The graph shows that when the current value of the focusing coil 61 is 2.5 A, the diameter of the electron beam is small, that is, the power density is the largest.

  20B and 20C are photographs showing the state of the electron beam inside the electron gun 50 when the current value of the focusing coil 61 is 1.0 A and 2.5 A, respectively, in this experiment.

  In the eighth embodiment, the main controller 14 uses not the power density but the power of the electron beam incident on the inner region 10f and the edge region 10e on the upper surface of the evaporation material 10 (in this case, turning on the filament power supply 53). (Power) may be changed. Alternatively, the main controller 14 may change both the power and the power density of the electron beam according to their regions.

  [Ninth Embodiment]

  FIG. 21 is a diagram for explaining a ninth embodiment of the present invention and a diagram for explaining a vapor deposition process. In the present embodiment, a plurality of evaporation materials 10 </ b> A, 10 </ b> B, 10 </ b> C, and 10 </ b> D are disposed in the chamber 13. FIG. 21 shows a plan view thereof. For example, four evaporating materials 10A to 10D are arranged so as to form a square. The central coordinates of the four evaporating materials 10A to 10D are represented by A (x1, y1), B (x2, y1), C (x1, y2), and D (x2, y2). One electron gun 50 emits an electron beam and changes the direction of the electron beam every predetermined time, thereby irradiating the four evaporation materials 10A to 10D with the electron beam sequentially every predetermined time. In the present embodiment, the electron gun 50 is a piercing electron gun.

  In order to irradiate the plurality of evaporation materials 10 </ b> A to 10 </ b> D separated as described above with the electron beam, the electron gun 50 can emit the electron beam in a plurality of directions by controlling the swing coil 62. Alternatively, when each opening angle in a plurality of directions is large, the electron gun 50 emits an electron beam in a plurality of directions by using another coil or another beam path without using the oscillating coil 62. Can do.

  22A and 22B are diagrams showing waveforms of electron beams oscillated by the oscillating coil 62 in the X and Y axes. 22A and 22B, the electron beam is irradiated in the order of the evaporation material 10A → 10B → 10C → 10D. After the irradiation of the fourth evaporating material 10D is completed, the electron gun 50 performs the irradiation process again in order from the first evaporating material 10A.

  Further, the swing pattern of the electron beam on the upper surface of each of the evaporation materials 10A to 10D is the same as the pattern shown in FIGS. 3A and 3B, and the electron beam swings according to the outer shape of the upper surface of the evaporation materials 10A to 10D. . In FIGS. 22A and 22B, the oscillation frequency on both axes is the same, but these may be different as shown in FIGS. 3A and 3B.

  Since the amount of evaporation per unit area of the evaporation material is practically limited by the occurrence of splash or spitting, in order to increase the film formation rate, the area of the upper surface (evaporation surface) of the evaporation material is increased, or A plurality of evaporation materials may be installed as in this embodiment.

  According to this embodiment, a uniform evaporation flow distribution can be generated for each of the evaporation materials 10A to 10D. Since a plurality of evaporation materials 10A to 10D are used, the film formation rate is improved and the processing time is also shortened. Note that the evaporation materials 10A to 10D may be used as different materials.

  As a mechanism for holding these evaporation materials 10A to 10D, the material holding mechanism 15 of each of the above embodiments can be employed. For example, when the installation interval of these evaporating materials 10 is made as narrow as possible, selecting a form that does not use the hearth as in the second embodiment, compared with the case where the hearth 16 of the first embodiment is used. The installation interval can be narrowed. As the installation interval is narrower, the incident angle of the evaporation flow onto the substrate W can be made closer to uniform (uniform).

  [Other embodiments]

  The present invention is not limited to the embodiment described above, and other various embodiments can be realized.

  In each said embodiment, the raising / lowering mechanism 11 which raises / lowers the support part 17 does not need. In this case, for example, a crucible as shown in FIG. 23 may be used.

  The shape of the oscillating pattern may not be a triangular wave, and if the electron beam is an oscillating pattern that oscillates according to the outer shape of the upper surface 10a of the evaporation material 10, a rectangular wave, a sawtooth wave, a sine wave, or the like Any combination is possible. Alternatively, if the swing pattern is not a reciprocating motion as described above, but is a pattern that swings along the outer shape of the upper surface of the evaporation material 10, for example, a spiral shape or multiple circles of different sizes It may be a pattern (not limited to a circle).

  In each of the above embodiments, a pierce-type electron gun is used. However, other types of electron guns such as a deflection-type (transverse-type) electron gun may be used.

  As an example of the holding mechanism for holding the substrate W, the carrier 25 provided in the transport apparatus 20 is given as an example. However, this holding mechanism may not be provided in the transport apparatus 20. That is, the holding mechanism may be a holding mechanism provided in the chamber 13 in the vacuum vapor deposition apparatus.

  In the ninth embodiment, one electron gun 50 is used, but a plurality of electron guns may be used. In this case, the number of electron guns and the number of evaporation materials may or may not match.

  It is also possible to combine at least two feature portions among the feature portions of each embodiment described above.

10, 10A-10D, 101, 102, 210 ... evaporation material 10a ... upper surface (opposing surface)
DESCRIPTION OF SYMBOLS 10b ... Side surface 10e ... Edge area | region 10f ... Inner area | region 11 ... Elevating mechanism 14 ... Main controller 15 ... Material holding mechanism 16 ... Ring-shaped hearth 17 ... Support part 18 ... Refrigerant flow path 25 ... Carrier 31, 131 ... Reflector 36 ... Cooling mechanism DESCRIPTION OF SYMBOLS 37 ... Heating mechanism 38 ... Holding mechanism 50 ... Electron gun 60 ... Beam focusing part 61 ... Focusing coil 62 ... Swing coil 63 ... Flow register 100, 200, 300, 400, 500, 600 ... Vacuum deposition apparatus

Claims (17)

An object holding mechanism for holding an object for vapor deposition;
A material holding mechanism that holds the evaporation material so as to face the object held by the object holding mechanism;
An electron gun for generating an electron beam; and an oscillator for oscillating the generated electron beam, and emitting the oscillating electron beam;
The electron gun is oscillated so as to oscillate the electron beam in accordance with the outer shape of the surface of the evaporation material held by the material holding mechanism facing the object held by the object holding mechanism. A vacuum deposition apparatus comprising: a control unit that controls the motive. The vacuum evaporation apparatus according to claim 1,
The control unit controls the oscillator so that an envelope connecting the amplitudes of the electron beams that are oscillated by the oscillator follows the outer shape of the facing surface of the evaporation material. The vacuum evaporation apparatus according to claim 1 or 2,
The material holding mechanism has a hearth for holding the evaporation material. The vacuum evaporation apparatus according to claim 3, wherein
The hearth is a ring-shaped hearth having a hole for holding the evaporation material. It is a vacuum evaporation system of Claim 3 or 4,
The hearth has a cooling unit that cools the hearth. The vacuum evaporation apparatus according to claim 1,
A vacuum deposition apparatus further comprising a reflector disposed in a non-contact manner on the evaporating material on at least a part of a side surface of the evaporating material held by the material holding mechanism. The vacuum evaporation apparatus according to claim 1,
A vacuum deposition apparatus further comprising a cooling mechanism arranged in a non-contact manner on the evaporating material at least partially around a side surface of the evaporating material held by the material holding mechanism. The vacuum evaporation apparatus according to claim 1,
The material holding mechanism has a support portion that supports a lower portion of the evaporation material,
The vacuum deposition apparatus further includes a heating mechanism disposed under the support portion. The vacuum evaporation apparatus according to any one of claims 1 to 8,
A vacuum deposition apparatus further comprising an elevating mechanism for elevating and lowering the evaporating material held by the material holding mechanism. The vacuum evaporation apparatus according to claim 9, wherein
The elevating mechanism has a mechanism for holding and elevating a second evaporating material waiting in a lower part of the first evaporating material held by the material holding mechanism among a plurality of evaporating materials, A vacuum deposition apparatus that raises the first evaporation material by bringing the upper portion of the second evaporation material into contact with the lower portion of the evaporation material and pushing up the first evaporation material. The vacuum evaporation apparatus according to any one of claims 1 to 10,
The control unit is configured such that the electron beam is incident on the edge region at a power or power density higher than the power or power density of the electron beam incident on the inner region surrounded by the edge region of the facing surface of the evaporation material. A vacuum deposition apparatus for controlling the electron gun. The vacuum evaporation apparatus according to any one of claims 1 to 11,
A vacuum deposition apparatus in which an evaporation material having a difference between a melting point and a boiling point within 300 ° C. is used as the evaporation material. The vacuum evaporation apparatus according to claim 12,
A vacuum deposition apparatus in which molybdenum is used as the evaporation material. The vacuum evaporation apparatus according to any one of claims 1 to 13,
The vacuum evaporation apparatus, wherein the evaporation material has a cylindrical shape or a partial conical shape. The vacuum evaporation apparatus according to any one of claims 1 to 14,
The electron gun is a piercing electron gun. An object holding mechanism for holding an object for vapor deposition;
An electron gun used in a vacuum deposition apparatus including a material holding mechanism that holds an evaporation material so as to face the object held by the object holding mechanism,
A source for generating an electron beam;
An oscillator for oscillating the generated electron beam;
The electron gun is oscillated so as to oscillate the electron beam in accordance with the outer shape of the surface of the evaporation material held by the material holding mechanism facing the object held by the object holding mechanism. An electron gun comprising a control unit for controlling a motive. Hold the evaporation material so as to face the object of vapor deposition held in place,
Using an electron gun having an oscillator that oscillates the generated electron beam, the electron beam is irradiated onto the evaporation material,
A vacuum deposition method of controlling an electron gun oscillator so as to oscillate the electron beam according to an outer shape of an opposing surface of the held evaporation material facing the object to be held.