JP2003183817A - Method for controlling scan of electron beam for vacuum vapor deposition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize a method for controlling scan of an electron beam for vacuum vapor deposition, which can utilize a vapor deposition material and can form a thin film having uniform thickness. <P>SOLUTION: This method for controlling scan is characterized by inputting waveform data for making the molten surface flat to MPU 11, based on the molten surface of the vapor deposition material obtained by scanning of the electron beam by the use of a generally used triangular wave having a constant scan rate. The input waveform data in directions of X-axis and Y-axis are respectively written in an X waveform data memory part 16X and a Y waveform data memory part 16Y in a data memory 15, through a bus 18. The written data are read in accordance with respective scan clocks SCa and SCb, of which the frequencies from a clock generator 12 form an irrational number ratio, and each of them is converted to analog by respective digital/analog converters 17X and 17Y, and is sent to a scan drive circuit. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scan control method for an electron beam for vacuum evaporation. Specifically, by enabling more effective use of the vapor deposition material used, it is possible to reduce the cost required for vacuum vapor deposition and to form a high-quality thin film of uniform thickness. It is intended to provide a scan control method of an electron beam for vacuum deposition, which can be performed.

[0002]

2. Description of the Related Art Conventionally, as a means for forming a thin film of metal or the like on the surface of a substrate, an optical communication component or a lens, a vapor deposition material is heated and sublimated by irradiating an electron beam in a vacuum to vapor deposit particles. Is used, and a vacuum deposition method is used in which a thin film is formed by depositing and depositing this on the surface of a substrate or the like. Therefore, first, the principle of this vacuum vapor deposition method will be described with reference to FIG.

In FIG. 12, a vapor deposition material 120 such as a disk-shaped metal or quartz is contained in a water-cooled hearth 110 generally made of copper, through which cooling water flows. The vapor deposition material 120 is irradiated with an electron beam EB for heating and evaporating the vapor deposition material 120 from the electron gun 100. In that case, the vapor-deposited object 200 such as a substrate, on which the vapor deposition particles 121 from the heated vapor deposition material 120 are attached and deposited above the water-cooled hearth 110, is the water-cooled hearth 110.
Are arranged so as to face each other.

Therefore, the electron gun 100 cannot be disposed above the water-cooled hearth 110. Therefore, the electron gun 100 is arranged at a portion on the water cooling hearth 110 side where the vapor deposition particles 121 do not adhere. As a result, the electron beam E
B is deflected by the magnetic field and is applied to the vapor deposition material 120. The illustrated electron beam EB is an example of deflecting so as to rotate by 270 degrees, which is called 270 degree deflection.

In this way, the electron beam EB irradiated on the vapor deposition material 120 continuously moves with a predetermined width so that the scanning or irradiation spot reciprocates.
This scan is arranged at the output stage of the electron gun 100,
An electron gun 1 is provided by a scan drive circuit (not shown).
This is performed by deflecting the electron beam EB emitted from 00.

Although the above is the principle of the vacuum vapor deposition method, in performing the scanning of the electron beam EB for irradiating the vapor deposition material 120, the scanning is conventionally performed with various scan waveforms.

FIG. 13A is a waveform diagram of a triangular wave current applied to a beam deflection coil for deflecting the electron beam EB, which has been used as the most general one in the past (conventional example 1). Here, the illustrated triangular wave is used for scanning the electron beam EB in the X-axis direction (the triangular wave is also used for scanning the electron beam EB in the Y-axis direction). As shown in FIG. 13B, the velocity of the triangular wave here is the front F side (left side in the vapor deposition material 120 in FIG. 12) and the back B side (right side).
It is always constant regardless of. Therefore, the electron beam EB
Scan speed is constant. In addition, in FIG.
The vertical axis shows that 0 is the average velocity of the triangular wave, and 1 scale shows that the velocity increases or decreases by 10% with respect to the average velocity.

In FIG. 13 (c), such a triangular wave having a constant velocity causes the electron beam EB at a beam power of 1.2 kw for 2 minutes 30 on a quartz plate 122 having a diameter of 30 mm and a thickness of 12 mm.
It shows the melting surface M when scanning and irradiating for seconds (the frequency of the waveform signal in the X-axis direction is 53 Hz and the waveform signal in the Y-axis direction is 500 Hz). The melting surface M here is not flat and is on the front side F of the quartz 122, that is, the electron beam EB.
From the viewpoint, the front side is deeply melted, and the back B side is shallowly melted.

This is due to the deflection characteristics of the electron gun 100 used and the fact that the electron gun 100 is not arranged directly above the vapor deposition material 120. That is, these cause deflection distortion of the electron beam EB and variations in beam shape,
This is because the energy applied to the surface of the vapor deposition material 120 becomes non-uniform. In addition, the size of the water-cooled hearth 110, the evaporation characteristic of the vapor deposition material 120, and the like are also cited as causative factors. Together with the deflection characteristics of the electron gun 100, the overall result is a non-flat melting surface M.

FIG. 14 (a) is a waveform diagram of a triangular wave current used in another conventional example (conventional example 2). The triangular wave shown here is corrected by peaking and inverse peaking by changing the gain of the amplifier of the triangular wave generating circuit.

That is, when the frequency is constant and Va level or higher, the gain of the amplifier is increased to make the slope S1 of the waveform steep and increase the scanning speed. On the other hand, below the Vb level, the gain of the amplifier is reduced to make the slope S3 of the waveform gentle and the scan speed slower. Each slope S1, S3
The slope S2 of the waveform between them is the same as the triangular wave shown in FIG.

As described above, in the second conventional example, the triangular wave is corrected so that the scanning speed becomes three kinds with respect to the general triangular wave indicated by the broken line. As described above, the flat melting surface M cannot be obtained with the triangular wave having the constant velocity shown in FIG. Therefore, as shown in FIG. 14 (b), the deeply melted portion P1 is scanned at a high scan speed, the shallowly melted portion P3 is scanned at a slow scan speed, and the intermediate portion P2 is scanned at a general scan speed. Scanning is performed to flatten the melted surface M.

FIG. 15A is a waveform diagram of a scan waveform used in still another conventional example (conventional example 3). The scan waveform here is a staircase wave. Therefore, the irradiation spot of the electron beam EB moves discontinuously, whereas it moves continuously in the conventional examples 1 and 2.

In the case of this method, as shown in FIG. 15B, the surface of the vapor deposition material 120 is finely divided into coordinates.
Then, the irradiation time of the electron beam EB is set, and each coordinate point (Xn, Yn) is irradiated with the electron beam EB as shown by the parallel diagonal lines. That is, each coordinate point (X
The irradiation energy product is adjusted for each n, Yn) to obtain a flat melt surface M.

[0015]

According to the prior art example 1 described with reference to FIG. 13, a deep melting portion and a shallow melting portion are formed in the vapor deposition material 120, and the flat melting surface M cannot be obtained. Is the street. If the vapor deposition material 120 does not melt uniformly, when the deeply melted and vaporized portion reaches near the bottom of the vapor deposition material 120, the vapor deposition material 12
With 0, the other part cannot be used even if it has not evaporated enough to withstand use.

That is, in Conventional Example 1, the vapor deposition material 120
Cannot be effectively used, and a multilayer thin film formation is required as in optical communication parts, or an expensive rare metal is used as the vapor deposition material 120. was there. In addition, the vapor deposition material 120
When the melting surface M of No. 1 becomes uneven due to uneven consumption, the generation of vapor deposition particles 121 from the deeply melted portion becomes less active than at other portions. As a result, the conventional example 1 has a problem that the deposition rate (thin film having a uniform thickness) on the object to be vapor-deposited 200 becomes unstable and the quality of the formed thin film is impaired.

On the other hand, according to the conventional example 2 described with reference to FIG. 14, there are three types of slopes S1 to S3 of the triangular wave depending on the non-uniformity of the melting depth of the vapor deposition material 120 when the general triangular wave is used. The waveform is corrected. However, when the waveform correction is performed, the amplitude A1 of the triangular wave before correction and the amplitude A2 after correction become different, and therefore the scan width becomes different. Therefore, in correcting the waveform, it is necessary to repeatedly adjust the waveform slopes S1 to S3 and the scan width while observing the output waveform from the waveform generating circuit with an oscilloscope. This adjustment is a very difficult task even for a skilled expert.

Moreover, only three kinds of slopes S1 to S3 of the waveform can be set. According to an experiment conducted by the inventor of the present application, when the scan width is wide, each of the portions P1 to P3 in FIG.
It has been obtained that the depth of fusion varies two-dimensionally in both the axial directions, and there is a limit to fine-tuned correspondence. The above-described unsolved problem is present in the second conventional example.

Further, according to the conventional example 3 described with reference to FIG. 15, the irradiation spot of the electron beam EB moves discontinuously. As a result, an unheated portion of the vapor deposition material 120 has to be heated every time the irradiation spot moves, so that it is necessary to lengthen the heating time. Moreover, the continuity of the generation of the vapor deposition particles 121 from the vapor deposition material 120 cannot be sufficiently ensured.

In addition, the electron beam E at each coordinate is adjusted according to the variation of the melting depth when using a general triangular wave.
It is necessary to set the irradiation time of B respectively. The irradiation time of the electron beam EB must be reset every time the vapor deposition material 120 is different and the thermal conductivity is different. In addition, there is a problem that the staircase wave has a slope due to the frequency characteristics of the scan drive circuit.

In addition to this, it is extremely troublesome to set the moving order of the irradiation spots appropriately. Therefore, the actual situation is to use the standard movement pattern as it is. The conventional example 3 has the above problems to be solved.

Further, in the conventional examples 1 and 2, the scanning of the electron beam EB is performed so that the scanning range becomes rectangular. In that case, as shown in FIG. 16A (plan view), the scan range S is defined by a hatched area so that the electron beam EB is not irradiated on the water-cooled hearth 110.
When A is set, the entire vapor deposition material 120 cannot be effectively used. In contrast to this, FIG.
As shown in (b), when the scan range SA is set so as to cover the entire evaporation material 120, the water-cooled hearth 110 is melted and the evaporated water-cooled hearth 1 is melted.
The material of No. 10 adheres to the object to be vapor-deposited 200 as an impurity and deteriorates the quality of the thin film. Such problems existed in Conventional Examples 1 and 2 as problems to be solved.

[0023]

Therefore, the present invention has been made in order to solve the above problems. Therefore, in the present invention, a general melting surface of the vapor deposition material obtained by scanning the electron beam with a general scan waveform in the X-axis and Y-axis directions is used as a flat surface. Data for correcting the scan waveform was created, and the electron beam was scanned using the new scan waveform obtained from the data for correcting the general scan waveform.

In order to realize the scanning of the spiral electron beam, the scan waveform in the X-axis direction, which is obtained by multiplying the sine wave as the basic waveform by the voltage varying in the radial direction, and the same frequency as this scan waveform are used. The electron beam is also scanned by using a sine wave having a phase difference of 90 ° as a basic waveform and a scan waveform in the Y-axis direction multiplied by a voltage that changes in the radial direction.

Further, based on the melting traces of the vapor deposition material obtained by this spiral scan, data is created so that the melting traces are flat and match the planar shape of the vapor deposition material, and are obtained from this data. The electron beam was scanned using the new scan waveform.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The circuit configuration of one embodiment of the present invention will be described with reference to FIG. Here, FIG. 1 shows a configuration of a waveform generating circuit for generating a scan waveform of an electron beam for vacuum deposition according to the present invention.

In FIG. 1, an MPU (microprocessor) 11 scans an electron beam EB (FIG. 12) with the general triangular wave (hereinafter referred to as “standard waveform”) shown in FIG. Data based on the melting surface M of the vapor deposition material 120 to be obtained is input.

That is, first, prior to data input,
The vapor deposition material 120 is scanned on a practical scale according to the standard waveform. As a result, a molten surface M as shown in FIG. 2 (a) was obtained. Here, FIG.
Similar to (c), the figure shows a case in which a quartz having a diameter of 30 mm and a thickness of 12 mm is scanned with the electron beam EB at a beam power of 1.2 kw for 2 minutes and 30 seconds. The frequency of the waveform signal in the X-axis direction (hereinafter referred to as "X waveform") is 53 Hz, and the frequency of the waveform signal in the Y-axis direction (hereinafter referred to as "Y waveform") is 500 Hz. At this time, as shown in FIG.
A display indicating that the scan waveform as shown in (b) is a standard waveform is made. That is, the electron beam EB
It is displayed that the scanning speed is constant regardless of the front F side (left side in the vapor deposition material 120 in FIG. 12) and the back B side (right side). The vertical axis in the figure is
With 0 as the average speed of the standard waveform, one scale shows that the speed increases or decreases by 5% with respect to the average speed.

Therefore, the melting surface M of the quartz 122, which is the vapor deposition material, is visually inspected, and the data almost conforming to the melting surface M is used as correction data for correcting the standard waveform as shown in FIG. As shown, input is made on the display screen via an input device such as a mouse. The vertical axis in the figure is the surface portion of the vapor deposition material 120 which is not melted and which is not irradiated with the electron beam EB, which is set to 0,
One scale is 1 mm. For example, "-4" indicates that the melting depth of the vapor deposition material 120 is 4 mm.

The correction data here is data for correcting the scan speed, and the scan width W is divided into a predetermined number n, and W / n is input as a correction unit. Figure 2
Although an example in which the scan width W is divided into eight is shown in (a), the present invention is not limited to this, and the vapor deposition material 12 can be used.
The number of divisions n is appropriately set according to the size of 0.

In FIG. 1, the MPU 11 that has received the correction data input reconstructs the entire waveform with velocity data based on the correction data to create new waveform data. Via RAM (random
It is written in the X waveform data storage section 16X in the data memory 15 using the access memory). The written data is read from the X waveform data storage unit 16X according to the instruction of the MPU 11 that has read the instruction data from the program memory 14, and the D / A (digital
It is converted to analog by the (analog) converter 17X and sent to the scan drive circuit as a corrected X waveform.
The above is the procedure for correcting the X waveform, but the Y waveform is similarly corrected by correcting an arbitrary portion of the waveform divided into a predetermined number n.

Here, the clock generator 12 performs a scan necessary to set the frequency of the X waveform and the frequency of the Y waveform to an irrational ratio (for example, the frequency of the X waveform is 53 Hz and the frequency of the Y waveform is 500 Hz). -Generate clocks SCa and SCb. The reason why the irrational ratio is set is to perform uniform scanning of the vapor deposition material 120 by shifting the trajectory of the electron beam EB.

The scan clocks SCa and SCb from the clock generator 12 are applied to the counters 13a and 13b, respectively, and the output of one counter 13a is applied to the X waveform data storage section 16X in the data memory 15. The output of the other counter 13b is provided to the Y waveform data storage unit 16Y.

If the flatness of the obtained melt surface M is insufficient even after the scan waveform is corrected once, the scan waveform is corrected based on the melt surface M according to the above-mentioned points. Become.

FIG. 3 shows a case where the scan waveform is corrected based on the fused surface M of quartz having a diameter of 30 mm and a thickness of 12 mm obtained by the standard waveform shown in FIG. 2 (a). Shows. In the melting surface M shown in FIG. 2A, the melting depth is large on the front side F (on the left side of the vapor deposition material 120 in FIG. 12, that is, the front side as viewed from the electron beam EB), and the depth B is small on the back side.

Therefore, as shown in FIG. 3A, the standard waveform is corrected so that the scanning speed becomes faster on the front side F (to shorten the irradiation time of the electron beam EB) and on the back side B. The scan speed is corrected to be slow.
FIG. 3B shows the corrected scan speed. The vertical axis in the figure is the same as in Fig. 13 (b), where 0 is the average speed, and 1 scale is a speed increase of 10% relative to the average speed.
It shows that it decreases. The waveform shown in FIG. 3 (a) is created by connecting each point for which velocity correction has been performed with an approximate curve.

FIG. 3C shows the fused surface M of quartz obtained by the scan waveform corrected in this way. Compared with the melting surface M of FIG. 2A, it is improved to be flatter.

As described above, the correction of the scan waveform is performed on the basis of the melt surface M obtained by executing the scan once. Therefore, various patterns are corrected according to the obtained melt surface M. Figure 4 (a)
The waveform shown in is a waveform corrected so that the scanning speed is slower on the front side F and faster on the back side B. Also, FIG.
The waveform shown in (b) is a waveform corrected so that both the front side F and the rear side B are fast and the middle is slow. Figure 4
The waveform shown in (c) is a waveform corrected so that both the front side F and the rear side B are delayed.

As described above, since waveform correction of various patterns can be performed corresponding to the melt surface M obtained by performing the scan once, for example, in the first step, the melt surface M as shown in FIG. However, in the second step, the melt surface M as shown in FIG. 5 (b), in the third step the melt surface M as shown in FIG. 5 (c), and in the fourth step as shown in FIG. 5 (d). When different melting surfaces M are formed, the waveform data of the pattern corresponding to each process is stored in the data memory 15 (FIG. 1), the corresponding waveform data is read for each process, and the scan waveform is read. Can be corrected.

FIG. 6 is a flow chart showing the flow of the procedure for correcting the scan waveform described above. In FIG. 6, first, the vapor deposition material 120 is formed according to the standard waveform.
The electron beam EB is scanned with respect to (S
1). When the scan with the standard waveform is completed, it is asked whether or not the melt surface M of the obtained vapor deposition material 120 is good (S
2).

If the melting surface M is non-uniform and not good (S2
NO), and input the cross-sectional data of the melting surface M in the X-axis direction and the Y-axis direction to the MPU 11 (S3). Next, the speed of the scan waveform is corrected based on the input data (S4), and a new scan waveform is created from the corrected scan speed (S5). Therefore, the electron beam EB is scanned with the corrected new scan waveform (S6), and the work from step S2 is repeated.

In step S2, if the melt surface M of the obtained vapor deposition material 120 is substantially flat and good (YES in S2), the melt surface M has been improved, and the operation is finished.

FIG. 7 is a circuit configuration diagram of another embodiment of the present invention. Here, the same components as those in FIG. 1 are designated by the same reference numerals.

In FIG. 7, the structure shown here is for spirally scanning the electron beam EB. That is, the irradiation spot of the electron beam EB is moved in a circular shape and also in the radial direction of the circle. This is because if the planar shape of the vapor deposition material 120 is circular and the scan range is rectangular, the vapor deposition material 120 cannot be effectively used as described with reference to FIG. As a result, impurities are vaporized and mixed in, and it is intended to deal with them.

Therefore, in the present embodiment, sine waves are used as the basic waveforms of the X waveform and the Y waveform, and the basic waveform of the X waveform shown in FIG. 8A and the Y waveform shown in FIG. 8B are used. The basic waveform of has a phase difference of 90 ° at the same frequency. As a result, the electron beam EB draws a circular locus.

The X waveform and the Y waveform are generated in proportion to the voltage in the radial direction (hereinafter referred to as "R voltage"). Therefore, if X voltage = R voltage × X waveform Y voltage = R voltage × Y waveform, the electron beam EB scans by drawing a spiral trajectory that diffuses or converges. FIG. 8C shows a waveform of the R voltage used for such a spiral scan. In the circle of radius R, the scan speed is slower toward the outer periphery OC side and the center CC of the circle is CC.
The scanning speed becomes faster toward the side.

7 is different from the circuit configuration shown in FIG. 1 in that the data memory 15 is provided with an R waveform data storage section 16R for storing the waveform data of the R voltage. D / A converter 17R for converting the waveform data read from 16R to analog
Is further arranged, and this D / A converter 1
The output from the 7R is connected to the other two D / A converters 17X, 1
It is added to 7Y. In addition, one counter 1
The output of 3a is given to the R waveform data storage section 16R in the data memory 15, and the output of the other counter 13b is given to the X waveform data storage section 16X and the Y waveform data storage section 16Y, respectively.

In the above configuration, the data showing the basic waveforms of the X waveform, Y waveform and R waveform shown in FIGS. 8A to 8C are stored in the waveform data of the data memory 15 via the MPU 11. If they are stored in the sections 16X, 16Y, 16R, read out, converted into analog by the D / A converters 17X, 17Y, and sent to the scan drive circuit, a spiral electron beam as shown in FIG. The locus L of the EB is realized from the outer peripheral side of the vapor deposition material 120 toward the center and from the center toward the outer peripheral side. Note that, in FIG. 9, the locus L of the electron beam EB is illustrated as being concentrically provided with a gap for convenience of description, but in reality, it is performed uniformly on the entire surface of the vapor deposition material 120.

Next, as described above, the electron beam EB
A method of correcting the scan waveform for scanning the spiral will be described. The waveform correction here is performed when the trajectory of the electron beam EB is distorted, for example, in an elliptical shape because the electron gun 100 is not disposed directly above the vapor deposition material 120. Evaporation material with a perfect circular plane 1
If the beam shape is distorted with respect to 20, water-cooled hearth 1
If the scan range is set so that the electron beam EB does not reach 10, the entire vapor deposition material 120 cannot be effectively used. On the other hand, the electron beam E is applied to the entire evaporation material 120.
When the scan range is set so that B is irradiated, the water-cooled hearth 110 is melted and the vapor deposition particles of impurities are generated.

Therefore, first, the electron beam EB is scanned with respect to the vapor deposition material 120 by the X, Y, and R waveforms (hereinafter referred to as “standard waveforms”) shown in FIGS. 8A to 8C. Then, visually inspect the obtained melting trace,
The data that is the desired trajectory of the electron beam EB is MPU1
Enter 1.

Therefore, in the correction of the melting trace in the circumferential direction, the melting trace is input to the MPU 11 in units of radian, and the angular velocities of the sine waves of the X waveform and the Y waveform are corrected in an arbitrary portion. Thereby, for example, FIG.
As shown in, the basic waveform indicated by the broken line is corrected to the waveform indicated by the solid line.

On the other hand, the correction of the melting trace in the radial direction is
Data based on the melt surface passing through the center of the vapor deposition material 120 in the diametrical direction is input to the MPU 11 to change the scan speed of the R waveform. That is, for example, in FIG.
As shown in (b), the scan speed is slowed down on the outer peripheral OC side, and the scan toward the center CC of the circle is fastened.

FIG. 11 is a flow chart showing the flow of the procedure for correcting the scan waveform for spirally scanning the electron beam EB as described above. This FIG.
First, the electron beam EB is scanned on the vapor deposition material 120 with the standard waveform (S11). When the scanning with the standard waveform is completed, it is asked whether or not the obtained melting trace of the vapor deposition material 120 is good (S12).

If the trace of melting does not match the shape of the vapor deposition material 120 and is not good (NO in S12), the correction data in the X-axis direction, the direction of Y-axis, and the direction of R referring to the trace of melting are MP-processed.
Input to U11 (S13). Then, the speed of the scan waveform is corrected based on the input data (S14), and a new scan waveform is created from the corrected scan speed (S1).
5). Therefore, the electron beam EB is scanned with the corrected new scan waveform (S16), and the step S
Repeat the work from 12.

In step S12, if the obtained melting trace of the vapor deposition material 120 has a substantially flat cross section and is in conformity with the planar shape of the vapor deposition material 120 and is good (S12 YES), the melting trace is Since it has been improved, the work is finished.

[0056]

As is apparent from the above description, according to the present invention, the melting surface of the vapor deposition material can be uniformly melted and vaporized to be flat, so that the vapor deposition material can be effectively used. can do. Therefore, the cost required for vacuum vapor deposition can be reduced, and the effect is remarkable especially when a multilayer thin film needs to be formed or when an expensive rare metal is used as a vapor deposition material.

Moreover, if the melt surface of the vapor deposition material is flattened, the vapor deposition particles are evenly generated over the entire melt surface, so that the vapor deposition rate on the object to be vapor deposited is stabilized and the quality of the formed thin film is improved. Will be done.

Further, since the electron beam scanning can be performed in a spiral shape in accordance with the planar shape of the disk-shaped vapor deposition material, the melting of the water-cooled hearth and the evaporation of impurities It is possible to use the vapor deposition material as a whole without waste, without causing contamination. As a result, the yield is remarkably improved as compared with the conventional example in which the electron beam is scanned in a rectangular shape, but the quality of the formed thin film is not deteriorated.

Furthermore, when the beam shape is not a perfect circle but is distorted, it can be dealt with by correcting the scan waveform, and effective use of the vapor deposition material and melting of the water cooling hearth and vapor deposition of impurities. It is possible to prevent the generation of particles.
Therefore, the effect of the present invention in vacuum deposition is extremely large in practice.

[Brief description of drawings]

FIG. 1 is a circuit configuration diagram of one embodiment of the present invention.

FIG. 2 is an explanatory diagram for explaining how to input scan waveform correction data.

FIG. 3 is an explanatory diagram for explaining a situation when a scan waveform is corrected.

FIG. 4 is a waveform diagram showing another correction example of the scan waveform.

FIG. 5 is an explanatory diagram for explaining an example of a melting surface of a vapor deposition material.

FIG. 6 is a flowchart showing a flow of a procedure for correcting a scan waveform with the configuration shown in FIG.

FIG. 7 is a circuit configuration diagram of another embodiment of the present invention.

FIG. 8 is a waveform diagram showing a basic waveform of a scan waveform.

9 is a display diagram showing a trajectory of an electron beam obtained by the configuration shown in FIG. 7. FIG.

FIG. 10 is a waveform diagram showing an example of a corrected scan waveform.

11 is a flowchart showing a procedure flow for correcting a scan waveform with the configuration shown in FIG.

FIG. 12 is a principle explanatory view for explaining the principle of the vacuum vapor deposition method.

FIG. 13 is an explanatory diagram for explaining a first conventional example.

FIG. 14 is an explanatory diagram for explaining a second conventional example.

FIG. 15 is an explanatory diagram for explaining a third conventional example.

FIG. 16 is an explanatory diagram for explaining a scan range according to conventional examples 1 and 2.

[Explanation of symbols]

11 MPU 12 clock generator 13a, 13b counter 14 Program memory 15 data memory 16RR Waveform data storage unit 16X X waveform data storage unit 16Y Y waveform data storage unit 17R, 17X, 17Y D / A converter 18 bus 100 electron gun 110 water cooled hearth 120 evaporation material 121 evaporated particles 122 quartz 200 evaporation target A1, A2 amplitude EB electron beam L trajectory M melting surface S1 to S3 inclination SA scan range SCa, SCb scan clock

Claims (3)

[Claims] 1. The melting surface becomes flat based on the melting surface (M) of a vapor deposition material (120) obtained by scanning an electron beam (EB) with a standard waveform in the X-axis and Y-axis directions. Vacuum deposition for creating data for correcting the standard waveforms in the X-axis and Y-axis directions, and controlling scanning of the electron beam by the scan waveforms in the X-axis and Y-axis directions obtained from the data for correcting the standard waveforms Scanning control method for electron beam. 2. A scan waveform in the X-axis direction obtained by multiplying a sine wave as a basic waveform by a changing voltage in the radial direction, and a sine wave having the same frequency as the scan waveform in the X-axis direction and a phase difference of 90 °. And a scan waveform in the Y-axis direction obtained by multiplying the voltage in the radial direction by the basic waveform as a basic waveform and a scan control method of an electron beam for vacuum deposition. 3. A first scan waveform in the X-axis direction obtained by multiplying a sine wave as a basic waveform by a changing voltage in the radial direction, and the same frequency as the first scan waveform and a phase difference of 90 °. Based on the melting trace of the vapor deposition material (120) obtained by scanning the electron beam (EB) with the sine wave as the basic waveform and the second scan waveform in the Y-axis direction multiplied by the changing voltage in the radial direction. And data for correcting the first and second scan waveforms, in which the melting trace is flat and matches the planar shape of the vapor deposition material, and data for correcting the first and second scan waveforms. A scan control method of an electron beam for vacuum deposition, which controls a scan of the electron beam according to a third scan waveform in the X-axis and Y-axis directions obtained from.