JPH05214529A - Electron-beam deposition plating method - Google Patents

Electron-beam deposition plating method

Info

Publication number
JPH05214529A
JPH05214529A JP5636992A JP5636992A JPH05214529A JP H05214529 A JPH05214529 A JP H05214529A JP 5636992 A JP5636992 A JP 5636992A JP 5636992 A JP5636992 A JP 5636992A JP H05214529 A JPH05214529 A JP H05214529A
Authority
JP
Japan
Prior art keywords
electron beam
shutter
plating
electron
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5636992A
Other languages
Japanese (ja)
Inventor
Seiichi Yoshida
成一 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP5636992A priority Critical patent/JPH05214529A/en
Publication of JPH05214529A publication Critical patent/JPH05214529A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve deposition efficiency in electron-beam deposition plating by bringing the incident angle of an electron beam on the upper surface of a plating material closer to vertical when a shutter is opened than when the shutter is closed. CONSTITUTION:The upper surface of a plating material 1 in a crucible is irradiated with an electron beam from an electron gun 3 provided beside the crucible 2, and a material 6 above the crucible is deposition-plated. A shutter 5 is arranged between the plating material 1 and the material to be plated 6 to block the ascension of the plating material vapor when plating is suspended. The incident angle of the electron beam on the upper surface of the plating material 1 is brought closer to vertical when the shutter 5 is opened that when the shutter 5 is closed. A high-quality plating is obtained in this way with high efficiency.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はるつぼ内のめっき材を電
子ビームの照射により蒸発または昇華させ、その上方を
連続して走行する長尺の鋼板やフィルム等の下面側に蒸
着めっきを行なう方法に関し、詳細にはめっきの実施、
中断、再開などに合わせて電子ビームの入射角度を変更
して、効率的な蒸着めっきを行なう電子ビーム蒸着めっ
き方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a method for evaporating or sublimating a plating material in a crucible by irradiating an electron beam, and performing vapor deposition plating on a lower surface of a long steel plate, film or the like which continuously runs above the plating material. Regarding details, in detail,
The present invention relates to an electron beam vapor deposition plating method in which an incident angle of an electron beam is changed according to interruption, resumption, etc. to perform efficient vapor deposition plating.

【0002】[0002]

【従来の技術】図2はるつぼ内のめっき材1へ電子ビー
ムを照射している状態の一例を示す説明図である。るつ
ぼ2内には溶融しためっき材料1が装填され、該るつぼ
2の側部には電子銃3が設けられる。また電子銃3とる
つぼ2の間には偏向コイル4a、4bを配設する。電子
銃3より斜め上方に向けて発射された電子ビームは偏向
コイル4a、4bによって斜め下方へ湾曲する様に偏向
され、るつぼ2内のめっき材1の上面1Aへ向けて照射
される。なお電子銃3の内部には図3に示す様に2組の
走査用コイル33、34 が設けられ、電子ビームをX方向及
びY方向へ2次元的に偏向させ、電子ビームをめっき材
の上面1Aにおいて1点鎖線(図2のBk)に示す様な
走査軌跡で走査する。
2. Description of the Related Art FIG. 2 is an explanatory view showing an example of a state in which a plating material 1 in a crucible is irradiated with an electron beam. A molten plating material 1 is loaded in the crucible 2, and an electron gun 3 is provided on a side portion of the crucible 2. Deflection coils 4a and 4b are arranged between the electron gun 3 and the crucible 2. The electron beam emitted obliquely upward from the electron gun 3 is deflected by the deflection coils 4a and 4b so as to be curved obliquely downward and is irradiated toward the upper surface 1A of the plated material 1 in the crucible 2. As shown in FIG. 3, two sets of scanning coils 33 and 34 are provided inside the electron gun 3, and the electron beam is two-dimensionally deflected in the X and Y directions, and the electron beam is placed on the upper surface of the plating material. In 1A, scanning is performed with a scanning locus as indicated by a chain line (Bk in FIG. 2).

【0003】図4は蒸着めっきを行なっている状態の一
例を示す説明図であり、るつぼ2内のめっき材1に電子
ビームが照射され、この照射によって発生する蒸気は矢
印M方向に連続走行する帯鋼6等の被めっき材下面に蒸
着される。なおるつぼ2の上方部には矢印R方向に旋回
しながら開閉作動するシャッタ5が設けられ、操業開始
前の予熱中や帯鋼の走行中断時には、上記シャッタ5を
破線に示す5a位置へ旋回移動させて閉鎖し、蒸発した
めっき材が待機中又は停止中の被めっき材に余分に付着
するのを防止する。
FIG. 4 is an explanatory view showing an example of a state in which vapor deposition plating is being performed. The plating material 1 in the crucible 2 is irradiated with an electron beam, and the vapor generated by this irradiation continuously travels in the direction of arrow M. It is vapor-deposited on the lower surface of the material to be plated such as the steel strip 6. A shutter 5 which is opened and closed while turning in the direction of arrow R is provided above the crucible 2, and the shutter 5 is moved to a position 5a shown by a broken line during preheating before the start of operation or when traveling of the steel strip is interrupted. Then, the evaporated plating material is prevented from excessively adhering to the material to be plated which is waiting or stopped.

【0004】[0004]

【発明が解決しようとする課題】ところでめっき材蒸気
を効果的に蒸着させるためには、めっき材の上面1Aと
被めっき材6の下面との間隔hは狭くすることが望まれ
る。このため電子銃3は被めっき材の上方に配置するこ
とが困難となって側方又は下方に配置するのが一般とな
り、例えば図2に示した様にその発射口を斜め上方に向
け、前記した偏向コイル4a,4bによって電子ビーム
を偏向させ、そのビーム軌跡Bを湾曲させてめっき材の
上面1Aへ照射する手法を採用している。
In order to effectively vaporize the plating material vapor, it is desired that the distance h between the upper surface 1A of the plating material and the lower surface of the material 6 to be plated be narrowed. For this reason, it is difficult to arrange the electron gun 3 above the material to be plated, and it is common to arrange the electron gun 3 on the side or below. For example, as shown in FIG. An electron beam is deflected by the deflection coils 4a and 4b described above, the beam trajectory B thereof is curved, and the upper surface 1A of the plated material is irradiated with the electron beam.

【0005】他方蒸着めっきの中断時などにおいても、
めっき材1の保熱等を行なう必要があるので、電子ビー
ム照射は継続して実施し続けなければならない。勿論予
熱のときは尚更である。従って電子ビーム軌跡Bは図4
に示す様に閉鎖時のシャッタ位置5a先端下方を通過、
即ちかなり低い位置を通ってめっき材1の上面へ到達す
る様に設定しておかなければならなかった。
On the other hand, even when the vapor deposition plating is interrupted,
Since it is necessary to heat the plated material 1 and the like, the electron beam irradiation must be continued. Of course, this is even more so when preheating. Therefore, the electron beam trajectory B is shown in FIG.
As shown in, the shutter position when closing 5a passes below the tip of
That is, it had to be set so as to reach the upper surface of the plated material 1 through a considerably low position.

【0006】一方シャッタ5を開放して蒸着めっきを行
なう定常運転時における電子ビーム軌跡Bも、シャッタ
閉鎖時と同じであり、従ってめっき材上面1Aへの電子
ビーム入射角θは小さいままであるから、該上面1Aに
おいて乱反射される電子ビーム量が多くなり、めっき材
の蒸発に利用される熱量は少ないものとなって熱交換効
率が非常に悪い。また上記入射角θが小さいと、めっき
材上面1Aにおける電子ビーム照射(投影)面積は広が
ったものとなり、従って電子ビームの照射密度は低く蒸
発のための熱交換効率が更に悪くなるという問題があっ
た。
On the other hand, the electron beam locus B in the steady operation in which the shutter 5 is opened and vapor deposition plating is the same as when the shutter is closed, and therefore the electron beam incident angle θ on the plated material upper surface 1A remains small. The amount of electron beams diffusely reflected on the upper surface 1A increases, and the amount of heat used for evaporation of the plating material decreases, resulting in very poor heat exchange efficiency. When the incident angle θ is small, the electron beam irradiation (projection) area on the upper surface 1A of the plated material becomes large, so that the electron beam irradiation density is low and the heat exchange efficiency for evaporation is further deteriorated. It was

【0007】ところで電子ビームを走査軌跡Bkに沿う
様に移動させると、電子銃に近い位置と遠い位置では入
射角θが変動し、またるつぼ2内のめっき材上面が上下
に変位(消費による下降と補充による上昇)することに
よっても照射角θは変動する。この際従来技術では常に
入射角θが小さいため、上記の理由によって生じる変動
幅が大きく、この変動によって蒸気発生量が不安定とな
って蒸着めっき品質の劣化を招くという問題があった。
By the way, when the electron beam is moved along the scanning locus Bk, the incident angle θ changes at a position close to the electron gun and a position far from the electron gun, and the upper surface of the plated material in the crucible 2 is vertically displaced (descended due to consumption). And rise due to replenishment) also changes the irradiation angle θ. At this time, in the prior art, since the incident angle θ is always small, there is a large fluctuation range caused by the above reason, and this fluctuation causes an unstable vapor generation amount, resulting in deterioration of vapor deposition plating quality.

【0008】なお上記問題を解決する手段としては、シ
ャッタ5の形状や駆動手段を変更することによって、電
子銃3の配設位置を高い位置へ配設できる様にすること
も考えられるが、該シャッタ5は真空蒸着めっき室の限
られたスペース内で開閉作動できるものでなくてはなら
ず、しかも常圧側に設けられる駆動装置と該シャッタ5
を高真空を保った状態で接続する必要がある。このため
シャッタ5は揺動軸を介して駆動源と接続する構造が真
空シール性を確保する上で最も安全と考えられており、
また該シャッタ5自体に稼動部分を形成しない構造を採
ることが、めっき材の付着による稼動不良を引き起こさ
ないための必須条件となっていた。この様な構造上の制
約及び蒸気の捕集性を考慮すると、シャッタ5は逆樋形
若しくは逆椀形とし、図4に示す様に矢印R方向へ揺動
する構造のものに限定せざるを得なかった。
As a means for solving the above problem, it is conceivable to change the shape of the shutter 5 and the driving means so that the electron gun 3 can be arranged at a higher position. The shutter 5 must be capable of opening and closing operation within a limited space of the vacuum deposition plating chamber, and the drive device provided on the normal pressure side and the shutter 5
Must be connected while maintaining a high vacuum. For this reason, the structure in which the shutter 5 is connected to the drive source via the swing shaft is considered to be the safest in order to secure the vacuum sealability,
Further, it has been an indispensable condition that the shutter 5 itself does not have an operating portion so that the operation failure due to the adhesion of the plating material is not caused. In consideration of such a structural restriction and vapor collecting property, the shutter 5 has to be an inverted gutter type or an inverted bowl type, and the shutter 5 is limited to a structure swinging in the direction of arrow R as shown in FIG. I didn't get it.

【0009】そこで本発明の目的は、シャッタ構造を変
更することなく、シャッタ開放時には効率的な電子ビー
ム照射が行え、且つシャッタ閉鎖時には電子ビームによ
る予熱または保熱等が確実に行なえる蒸着めっき方法を
提供することにある。
Therefore, an object of the present invention is to provide a vapor deposition plating method capable of efficiently irradiating an electron beam when the shutter is opened, without changing the shutter structure, and reliably preheating or keeping heat by the electron beam when the shutter is closed. To provide.

【0010】[0010]

【課題を解決するための手段】上記目的を達成し得た本
発明は、シャッタの開放時には上記めっき材上面に対す
る電子ビーム照射の入射角をシャッタの閉鎖時より垂直
方向に近づけることを要旨とするものである。
DISCLOSURE OF THE INVENTION The present invention which has achieved the above object is to make the incident angle of electron beam irradiation on the upper surface of the plating material closer to the vertical direction when the shutter is opened than when the shutter is closed. It is a thing.

【0011】[0011]

【作用】本発明においては、めっき材上面への電子ビー
ム照射軌跡をシャッタの開放時と閉鎖時で変更すること
とし、閉鎖時にはシャッタ5の先端下部を通って従来と
同様の軌跡によって電子ビーム照射するが、シャッタ開
放時には電子ビーム軌跡を変更して、めっき材上面への
入射角を垂直方向に近づけることとし、これによって蒸
着操業時におけるめっき材上面での電子ビームの乱反射
は低減され、蒸発のための熱交換が効率的に行なわれる
と共に、めっき材上面における電子ビーム照射(投影)
面積は小さくなり、高密度に集中した照射がおこなえ
る。まためっき材上面が上下に変位しても入射角の変動
が小さく抑えられるので、蒸気量が変動してめっき品質
の不良を生じる様なこともない。
In the present invention, the trajectory of electron beam irradiation on the upper surface of the plated material is changed between when the shutter is opened and when it is closed. However, when the shutter is opened, the trajectory of the electron beam is changed so that the incident angle on the top surface of the plating material is made closer to the vertical direction, which reduces the diffused reflection of the electron beam on the top surface of the plating material during the vapor deposition operation and reduces evaporation. Heat exchange is efficiently performed, and electron beam irradiation (projection) is performed on the top surface of the plated material.
The area is small, and high-density concentrated irradiation can be performed. Further, even if the upper surface of the plated material is vertically displaced, the fluctuation of the incident angle can be suppressed to a small level, so that the vapor amount does not fluctuate and the plating quality does not deteriorate.

【0012】なお上記電子ビーム軌跡の変換は偏向コイ
ルによる偏向磁場を変えることによって行なうことが好
ましく、シャッタ開放時と閉鎖時における電子ビーム走
査軌跡は偏向コイルの出力調節によって行う様に設定し
ておくことが望ましい。またこの電子ビーム軌跡の変更
時には電子ビームの発生を一時中止又は小出力に低減
し、めっき材以外への誤照射を防止することが推奨され
る。
The above-mentioned electron beam locus conversion is preferably performed by changing the deflection magnetic field by the deflection coil, and the electron beam scanning locus at the time of opening and closing the shutter is set so as to be adjusted by the output of the deflection coil. Is desirable. Further, it is recommended to temporarily stop the generation of the electron beam or reduce it to a small output when changing the trajectory of the electron beam to prevent erroneous irradiation to parts other than the plated material.

【0013】[0013]

【実施例】図1は本発明方法における電子ビーム照射の
実施例を示す説明図であり、るつぼ2、シャッタ5、電
子銃3及び被めっき材6の配設位置は図4に示す従来例
と同じであり、電子ビーム軌跡は次の様に変更する。す
なわちシャッタ閉鎖時には、シャッタ5が5aに示す位
置に移動しているので、電子ビーム軌跡B1 は図に示す
様にシャッタの下部を通ってめっき材1へ低入射角θ1
で照射する様に構成される。このときめっき材の予熱又
は保熱を行なうだけなので電子ビームの照射量は大出力
を要さず、照射角度による乱反射量の多さや照射密度の
低さ等はさして重要でない。
FIG. 1 is an explanatory view showing an embodiment of electron beam irradiation in the method of the present invention. The arrangement positions of the crucible 2, shutter 5, electron gun 3 and plated material 6 are the same as those of the conventional example shown in FIG. It is the same, and the electron beam trajectory is changed as follows. That is, when the shutter closed, the shutter 5 is moved to the position shown in 5a, the electron beam trajectory B 1 represents a low incident angle theta 1 to the plating material 1 through the lower portion of the shutter as shown in FIG.
It is configured to irradiate with. At this time, since the plating material is only preheated or kept warm, a large output of the electron beam is not required, and a large amount of irregular reflection depending on the irradiation angle and a low irradiation density are not so important.

【0014】またシャッタ5の開放時には、閉鎖時より
も偏向コイルの磁場を強くし、電子ビーム軌跡B2 の曲
げ半径が小さくなる様にし、入射角がθ1 <θ2 の関係
を満たす様にして入射角θ2 を垂直方向に近づける。こ
れによってビームの乱反射量は低減されると共に、照射
密度は高められ、めっき材を効率的に蒸発又は昇華する
ことができる。
When the shutter 5 is opened, the magnetic field of the deflection coil is made stronger than when the shutter 5 is closed, the bending radius of the electron beam trajectory B 2 is made smaller, and the incident angle satisfies the relation of θ 12. The incident angle θ 2 in the vertical direction. As a result, the amount of irregular reflection of the beam is reduced, the irradiation density is increased, and the plating material can be efficiently evaporated or sublimated.

【0015】なお偏向コイルによる電子ビーム軌跡の変
更と同時に走査用コイル33、34の電流設定値を変換する
ことが好ましく、各電子ビーム軌跡B1 、B2 に合わせ
てめっき材上面1Aにおける走査軌跡Bkを広い範囲で
設定できる様にする。またシャッタ5の開閉操作時には
電子ビームの発生を数十秒間中止又は小出力に低減する
ことが望ましく、シャッタ5への電子ビームの誤照射を
防止すると共に、偏向コイルのリアクタンスによる遅れ
でビームパスが不確定となり、電子ビームがめっき材1
の表面以外の部分へ誤照射されるのを防止する。この電
子ビームの中止又は低減によってめっき材の温度は若干
低下するが、固化等を生じるまでには至らず大きな弊害
を生じる様なことはない。
It is preferable to change the current setting values of the scanning coils 33 and 34 at the same time when the electron beam locus is changed by the deflection coil. The scanning locus on the plated material upper surface 1A in accordance with the electron beam trajectories B 1 and B 2. Allow Bk to be set in a wide range. Further, it is desirable to stop the generation of the electron beam for several tens of seconds or reduce the output to a small output when the shutter 5 is opened and closed. This prevents erroneous irradiation of the electron beam on the shutter 5 and delays the beam path due to the delay due to the reactance of the deflection coil. Confirmed, electron beam is plated 1
Prevents accidental irradiation of parts other than the surface of. Although the temperature of the plated material is slightly lowered by the suspension or reduction of the electron beam, it does not cause solidification or the like and does not cause a serious adverse effect.

【0016】例えば電子ビームの入射角度が20度から
30度に変更されたとき、その照射密度は約1.5 倍改善
され、効率的な蒸発又は昇華ができる様になる。またこ
のときめっき材の高さ変化によるビーム照射位置の移動
量は約2/3程度に低減できる様になり、めっき蒸発量
の変動を少なく抑えることが可能となる。また入射角度
は小さいほど、るつぼ上面等へのビーム誤照射の確率は
高くなり、蒸着量のばらつきや付着欠陥を起こし易くな
るという不都合がある。
For example, when the incident angle of the electron beam is changed from 20 degrees to 30 degrees, the irradiation density is improved by about 1.5 times, which enables efficient evaporation or sublimation. Further, at this time, the amount of movement of the beam irradiation position due to the height change of the plated material can be reduced to about 2/3, and it is possible to suppress the fluctuation of the amount of plating evaporation. Further, the smaller the incident angle, the higher the probability of erroneous beam irradiation on the upper surface of the crucible and the like, and there is the inconvenience that variations in the deposition amount and adhesion defects are more likely to occur.

【0017】[0017]

【発明の効果】本発明により、電子ビームの熱量を有効
利用してめっき材を効率的に蒸発又は昇華できる様にな
った。まためっき材上面の変動や電子ビーム走査軌跡の
移動等に際しても、電子ビーム照射の密度や角度の変動
を小さくできるので、安定した品質の蒸着めっき製品を
製造できることとなった。
According to the present invention, the plating material can be efficiently evaporated or sublimated by effectively utilizing the heat quantity of the electron beam. Further, even when the upper surface of the plated material fluctuates or the electron beam scanning locus moves, fluctuations in the density and angle of electron beam irradiation can be reduced, so that a vapor-deposited product of stable quality can be manufactured.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明方法による蒸着めっきの実施例を示す説
明図である。
FIG. 1 is an explanatory diagram showing an example of vapor deposition plating according to the method of the present invention.

【図2】電子ビーム照射によるめっき材の蒸発状態の例
を示す説明図である。
FIG. 2 is an explanatory diagram showing an example of an evaporated state of a plated material due to electron beam irradiation.

【図3】電子銃の構造例を示す断面説明図である。FIG. 3 is a cross-sectional explanatory view showing a structural example of an electron gun.

【図4】従来方法による蒸着めっきの一例を示す説明図
である。
FIG. 4 is an explanatory diagram showing an example of vapor deposition plating by a conventional method.

【符号の説明】[Explanation of symbols]

1 めっき材 2 るつぼ 3 電子銃 4a、4b 偏向コイル 5 シャッタ 6 被めっき材 1 plated material 2 crucible 3 electron gun 4a, 4b deflection coil 5 shutter 6 plated material

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 るつぼ中のめっき材上面に、該るつぼ側
部に設けた電子銃より電子ビームを照射し、該るつぼ上
方の被めっき材に蒸着めっきを行なうこととし、めっき
中断時には上記めっき材と被めっき材の間に、めっき材
蒸気の上昇を遮断するシャッタを配置する電子ビーム蒸
着めっき方法において、上記シャッタの開放時には上記
めっき材上面に対する電子ビーム照射の入射角度を、シ
ャッタの閉鎖時より垂直方向に近づけることを特徴とす
る電子ビーム蒸着めっき方法。
1. An upper surface of a plated material in a crucible is irradiated with an electron beam from an electron gun provided at a side portion of the crucible to perform vapor deposition plating on a material to be plated above the crucible. In the electron beam evaporation plating method, in which a shutter for blocking the rise of the plating material vapor is arranged between the plating material and the material to be plated, when the shutter is opened, the incident angle of the electron beam irradiation on the upper surface of the plating material is set to be smaller than that when the shutter is closed. An electron beam vapor deposition plating method characterized in that the electron beam evaporation plating is performed in the vertical direction.
JP5636992A 1992-02-05 1992-02-05 Electron-beam deposition plating method Withdrawn JPH05214529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5636992A JPH05214529A (en) 1992-02-05 1992-02-05 Electron-beam deposition plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5636992A JPH05214529A (en) 1992-02-05 1992-02-05 Electron-beam deposition plating method

Publications (1)

Publication Number Publication Date
JPH05214529A true JPH05214529A (en) 1993-08-24

Family

ID=13025346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5636992A Withdrawn JPH05214529A (en) 1992-02-05 1992-02-05 Electron-beam deposition plating method

Country Status (1)

Country Link
JP (1) JPH05214529A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163668A (en) * 2009-01-19 2010-07-29 Jeol Ltd Electron gun apparatus for electron beam vapor deposition
JP2013112894A (en) * 2011-12-01 2013-06-10 Ulvac Japan Ltd Vacuum deposition device, electron gun, and vacuum deposition method
JP2013170272A (en) * 2012-02-17 2013-09-02 Hitachi Zosen Corp Electron beam deposition device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163668A (en) * 2009-01-19 2010-07-29 Jeol Ltd Electron gun apparatus for electron beam vapor deposition
JP2013112894A (en) * 2011-12-01 2013-06-10 Ulvac Japan Ltd Vacuum deposition device, electron gun, and vacuum deposition method
JP2013170272A (en) * 2012-02-17 2013-09-02 Hitachi Zosen Corp Electron beam deposition device

Similar Documents

Publication Publication Date Title
JPH04333386A (en) Laser beam machine and laser beam welding method
US4863581A (en) Hollow cathode gun and deposition device for ion plating process
US5698273A (en) Electron beam physical vapor deposition method
CN112760600A (en) Focusing scanning type pulse laser film deposition device and deposition method
JPH05214529A (en) Electron-beam deposition plating method
EP0735157A2 (en) Formation of magnesium vapor with high evaporation speed
US3177535A (en) Electron beam furnace with low beam source
US7319205B2 (en) Laser welding method and device
JP3371454B2 (en) Continuous vacuum deposition equipment
JP4397979B2 (en) Self-supporting rotating rod supply source
JPH0625835A (en) Vacuum deposition method and vacuum deposition device
KR20170056326A (en) Vacuum vapor manipulator
JPH0671645B2 (en) Mold for an electron beam melting furnace equipped with an electron beam deflection coil
JPH05106028A (en) Vapor deposition method by energy beam
JPH0633228A (en) Vacuum deposition device
JPH03234368A (en) Root running method for narrow groove welding
JPH01263265A (en) Vacuum arc deposition method
JPH05279744A (en) Irradiation method for electron beam
JPH11246965A (en) Formation of thin film by laser vapor deposition method and laser vapor deposition device used for the method
JPS60115218A (en) Vaporization source cell of thin film forming apparatus
JPH0892734A (en) Evaporation of mg
JPH06263587A (en) Molecular beam epitaxial growth apparatus
JPS6029942A (en) Method and device for production of vertical magnetic recording medium
JPH06248441A (en) Laser abrasion device
JPS63137167A (en) Lining for the inner surface of hollow body with compound film

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990518