JP2013100220A5 - - Google Patents

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Publication number
JP2013100220A5
JP2013100220A5 JP2012231353A JP2012231353A JP2013100220A5 JP 2013100220 A5 JP2013100220 A5 JP 2013100220A5 JP 2012231353 A JP2012231353 A JP 2012231353A JP 2012231353 A JP2012231353 A JP 2012231353A JP 2013100220 A5 JP2013100220 A5 JP 2013100220A5
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JP2012231353A
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English (en)
Japanese (ja)
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JP6036155B2 (ja
JP2013100220A (ja
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JP2012231353A 2011-10-21 2012-10-19 ＧａＮ結晶 Active JP6036155B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012231353A JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011232166 2011-10-21
JP2011232166 2011-10-21
JP2012231353A JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶

Related Child Applications (1)

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JP2016204109A Division JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

Publications (3)

Publication Number Publication Date
JP2013100220A JP2013100220A (ja) 2013-05-23
JP2013100220A5 true JP2013100220A5 (https=) 2015-11-19
JP6036155B2 JP6036155B2 (ja) 2016-11-30

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ID=48621275

Family Applications (2)

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JP2012231353A Active JP6036155B2 (ja) 2011-10-21 2012-10-19 ＧａＮ結晶
JP2016204109A Active JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016204109A Active JP6217825B2 (ja) 2011-10-21 2016-10-18 ＧａＮ結晶

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JP (2) JP6036155B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6832668B2 (ja) * 2016-10-07 2021-02-24 古河機械金属株式会社 自立基板、及び、自立基板の製造方法
JP6909281B2 (ja) 2017-03-17 2021-07-28 旭化成株式会社 熱硬化性樹脂組成物
JP6455575B2 (ja) * 2017-09-12 2019-01-23 三菱ケミカル株式会社 第１３族金属窒化物基板の製造方法
FR3102776B1 (fr) 2019-11-05 2025-04-11 Saint Gobain Lumilog Plaquette de nitrure d’élément 13 de variation d’angle de troncature réduite

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009126723A (ja) * 2007-11-20 2009-06-11 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体結晶の成長方法、ｉｉｉ族窒化物半導体結晶基板の製造方法およびｉｉｉ族窒化物半導体結晶基板
WO2009146382A1 (en) * 2008-05-28 2009-12-03 The Regents Of The University Of California Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
KR20120028897A (ko) * 2009-06-04 2012-03-23 미쓰비시 가가꾸 가부시키가이샤 주기표 제 13 족 금속 질화물 결정의 제조 방법 및 제조 장치
JP5447289B2 (ja) * 2009-08-19 2014-03-19 三菱化学株式会社 窒化物半導体結晶およびその製造方法

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