JP2013088989A - Conductive film for crime prevention sensor, crime prevention sensor, and conductive film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a conductive film for a crime prevention sensor, a crime prevention sensor, and a conductive film, which can achieve highly accurate detection, less visibility (inconspicuous), and less discomfort in appearance, even if a part of a conductive member is cut.SOLUTION: A conductive film for a crime prevention sensor includes a support and a conductive portion 16 that is provided on one of principal surfaces of the support and that is electrically connected to a positive electrode 14a and a negative electrode 14b. The conductive portion 16 includes a detection block 22 in a predetermined shape that is formed from first connection portions 20a connecting to the positive electrode 14a to second connection portions 20b connecting to the negative electrode 14b. The detection block 22 can detect an electrical change in the detection block 22 in response to an attack from the outside and has a longest side length of 20 mm or less.

Description

  The present invention relates to a security film for a security sensor, a security sensor, and a conductive film that are attached to a window glass or the like.

  Recently, in order to prevent suspicious people and intruders such as empty nests from invading into buildings, etc., crime prevention that reinforces places that are easily used as entrance windows such as window glass and detects abnormalities such as destruction of window glass etc. It is done to install a sensor.

  For example, as a means for preventing the scattering of broken pieces even when the glass is broken, a glass with a wire mesh embedded in the inside of the glass, or a scattering that allows a PET film to be adhesively attached to a window glass or the like. There is a prevention film.

  In addition, as a security sensor for detecting an abnormality such as destruction of a window glass or a tent sheet, for example, as described in Patent Documents 1 and 2, a detection line made of a conductive wire or the like connected to a detection circuit. There is a crime prevention sensor that detects abnormalities in glass, sheets, and the like by providing a glass or a sheet for a tent and electrically detecting cutting of a detection line.

Japanese Utility Model Publication No. 60-34685 JP 2005-338917 A

  However, in the configuration of Patent Document 1, if a part of the conductive member is missing at the time of manufacture, the resistance change may not be read.

  Further, in the configuration of Patent Document 2, the resistance change is not sufficient by cutting a part of the conductive member, the detection sensitivity is lowered, and there is a possibility of malfunction or omission of detection.

  The present invention has been made in view of the above circumstances, and even when a part of the conductive member is cut, it can be detected with high accuracy, and is hardly visible (not conspicuous) and does not give an unpleasant appearance. An object is to provide a conductive film for a security sensor and a security sensor.

  Another object of the present invention is to provide a conductive film suitable for use in a detection part (detection circuit) of a security sensor.

[1] The conductive film for a security sensor according to the first aspect of the present invention is formed on a support and one main surface of the support and is electrically connected to the + side electrode and the − side electrode. The conductive portion has a detection block of a predetermined shape formed over a first connection portion with the + side electrode and a second connection portion with the − side electrode, and the detection block is An electrical change in the detection block due to an attack from the outside can be detected, and the detection block has a longest side length of 20 mm or less.

  As a result, when an electric current is passed from the + side electrode toward the − side electrode, for example, when an attack or a destructive action is performed on the conductive film, and the conduction of the detection block cannot be taken, for example, the + side electrode and the − side Since the resistance value between the electrodes changes, it is possible to detect that an attack or a destructive action has been performed on the window glass, for example, by electrically detecting this. In addition, for example, in the case of a minute disconnection due to a change over time or the like, the resistance value hardly changes, so that it is not erroneously detected (false detection) as an attack or a destructive action for the purpose of intrusion.

  Further, as described above, the length of the longest side of the detection block is preferably 20 mm or less, more preferably, the upper limit value is 15 mm or less, 10 mm or less, or 8 mm or less, and the lower limit value is 5 mm or more, 7 mm or more. It is. If the length of the side is less than the lower limit, the detection sensitivity becomes too high, and for example, even a disconnection of about 1 mm accompanying a change with time may be detected, and a warning sound may be frequently generated. Of course, when it is desired to increase the detection sensitivity, it may be 5 mm or less. On the other hand, when the above upper limit is exceeded, the detection sensitivity is conversely lowered, and there is a risk that attacks and destruction (breaking of 5 mm or more) aimed at intrusion cannot be detected. Therefore, by being in the above range, it is possible to reliably detect an attack or destruction (disconnection of 5 mm or more) for the purpose of entering.

[2] In the first aspect of the present invention, the detection block may be configured by a mesh pattern in which a large number of meshes made of fine metal wires are arranged. Thereby, it is hard to be visually recognized (it is not conspicuous) and it is hard to give an unpleasant appearance.

  The line width Wa of the mesh pattern is preferably 100 μm or less, more preferably the upper limit value is 80 μm or less, 50 μm or less, 30 μm or less, 21 μm or less, 14 μm or less, 7 μm or less, and the lower limit value is 1 μm or more, 3 μm or more, 5 μm or more. . When the line width is less than the above lower limit, the conductivity is insufficient, and therefore the detection sensitivity is insufficient when the conductive film is used for the detection part (detection circuit) of the security sensor. On the other hand, when the upper limit is exceeded, the fine metal wires become conspicuous and the visibility is deteriorated. Therefore, the detection sensitivity and the visibility are improved by being in the above range.

[3] In the first aspect of the present invention, ten or more detection blocks may be arranged in the electrical connection direction. Thereby, a wide range part can be comprised as a detection part, and the attack or destruction action can be detected to the window glass etc. for the purpose of invasion.

[4] In the first aspect of the present invention, the conductive portion is divided into two or more segments, and each of the segments includes the first connection portion and the second connection portion, and the first connection portion. Ten or more detection blocks may be arranged from the second connection portion to the second connection portion.

[5] In this case, the first connection portion of each segment is commonly connected to the + side electrode, and the second connection portion of each segment is commonly connected to the − side electrode. The segments may be connected in parallel. This makes it possible to reliably detect an attack or destruction for the purpose of entering in a segment unit and avoid a burden on the circuit system due to a large voltage change. This leads to downsizing and cost reduction of the detection circuit.

[6] In addition, each of the segments may have a plurality of extents extending in the conductive direction, and each of the extents may include ten or more detection blocks.

[7] In this case, the plurality of extents in each segment may be connected in series via a relay wiring.

[8] In [2], the detection block may have a detection band formed by meandering electrically insulating lines formed in the mesh pattern. As a result, the detection band can be configured as a resistor. When the detection band is disconnected, the resistance value of the detection band changes, and this change can be detected as an electrical change (voltage change). Examples of the meandering shape include a spiral shape and a wave shape (zigzag shape).

[9] In this case, the width of the detection band is preferably 3 mm or less. More preferably, the upper limit value is 2 mm or less and 1.4 mm or less, and the lower limit value is 0.5 mm or more and 1 mm or more.

[10] The width of the electrically insulating line is preferably 100 μm or less. More preferably, the upper limit value is 80 μm or less, 50 μm or less, 30 μm or less, 21 μm or less, 14 μm or less, 7 μm or less, and the lower limit value is 1 μm or more, 3 μm or more, 5 μm or more.

[11] In the first aspect of the present invention, two or more micro-resistors by the detection block are connected in series to constitute one resistor, and two or more resistors are connected in series to form one resistor group. The first group is configured such that one end of the resistor group is electrically connected to the + side electrode, and the other end of the resistor group is electrically connected to the − side electrode. Two connecting portions may be used.

[12] In this case, each of the first connection portions of the two or more resistor groups is commonly connected to the + side electrode, and each of the second connection portions of the two or more resistor groups is the − side electrode. It is preferable that two or more resistor groups are connected in parallel. As a result, it is possible to reliably detect attacks and destruction for the purpose of intrusion for each resistor group, and to avoid a burden on the circuit system due to a large voltage change. This leads to downsizing and cost reduction of the detection circuit.

[13] A security sensor according to a second aspect of the present invention includes a detection circuit including the detection block of the conductive film for a security sensor according to the first aspect of the present invention, the + side electrode, and the − side. And a detection circuit connected to an electrode and detecting a change in resistance value of the detection block of the conductive film for security sensor.

[14] In the second aspect of the present invention, the detection circuit may be a parallel circuit.

[15] In the second aspect of the present invention, the detection circuit may detect any one or more of disconnection of the detection block and change in resistance value of the detection block.

[16] A conductive film according to a third aspect of the present invention includes a support and a conductive portion formed on one main surface of the support and electrically connected to the + side electrode and the − side electrode. And the conductive portion includes a detection block having a predetermined shape formed over a first connection portion with the + side electrode and a second connection portion with the − side electrode, and the detection block is externally provided. It is possible to detect an electrical change in the detection block due to the attack, and the length of the longest side of the detection block is 20 mm or less.

  As explained above, according to the conductive film for security sensor and the security sensor according to the present invention, even if a part of the conductive member is cut, it can be detected with high accuracy, and is not easily recognized (not noticeable). It is hard to give an unpleasant appearance.

  Moreover, according to the electroconductive film which concerns on this invention, even if a part of electroconductive member is cut | disconnected by using for the detection part (detection circuit) of a security sensor, it can detect with high precision, and also it is hard to be visually recognized. It is possible to provide a security sensor that is not conspicuous and hardly causes discomfort in appearance.

It is sectional drawing which abbreviate | omits and shows the structure of the electroconductive film which concerns on this Embodiment. It is a top view which abbreviate | omits and shows the structure of the electroconductive part in an electroconductive film. It is a top view which expands and shows a part of conductive part (The shape of a detection zone | band is a spiral shape). It is a top view which shows the structure of a detection block and a detection zone. 5A is a plan view showing the configuration of the region indicated by VA in FIG. 4, FIG. 5B is a plan view showing the configuration of the region indicated by VB in FIG. 4, and FIG. 5C is the configuration of the region indicated by VC in FIG. FIG. It is a top view which expands and shows a part of conductive part (The shape of a detection zone | band is a wave shape (zigzag shape)). It is explanatory drawing which abbreviate | omits and shows the conduction direction of the sense current from a + side electrode partially. It is explanatory drawing which abbreviate | omits and shows the conduction direction of the sense current which goes to a negative electrode. FIG. 9A is a circuit diagram showing a minute resistor by each detection block, and FIG. 9B is a circuit diagram showing a resistor by each extent. It is an equivalent circuit diagram which shows the structure of an electroconductive part. FIG. 11A is a block diagram showing a configuration of the security sensor, and FIG. 11B is a block diagram showing a configuration of a detection circuit of the security sensor. It is a top view which abbreviate | omits and shows the structure of the electroconductive part of the electroconductive film which concerns on a modification.

  Embodiments of a security film for a security sensor, a security sensor, and a conductive film according to the present invention will be described below with reference to FIGS. In the present specification, “to” is used as a meaning including numerical values described before and after the lower limit value and the upper limit value.

  As shown in FIG. 1, a conductive film 10 according to the present embodiment is formed on a transparent support 12 and one main surface 12a of the support 12, and is provided with a + side electrode 14a and a − side electrode 14b. And a conductive portion 16 electrically connected to each other. The + side electrode 14 a and the − side electrode 14 b may also be formed on one main surface 12 a of the support 12.

  As shown in FIG. 2, the conductive part 16 has two or more segments SG that are electrically insulated from each other. The example of FIG. 2 shows a form in which six segments SG (first segment SG1 to sixth segment SG6) are arranged in the horizontal direction.

  Each segment SG is electrically connected to the + side electrode 14a through the first peripheral wiring 18a and the first connection portion 20a, and to the − side electrode 14b through the second peripheral wiring 18b. It has the 2nd connection part 20b, and the detection block 22 of the some predetermined shape formed over the 1st connection part 20a and the 2nd connection part 20b. That is, the first connection portion 20a of each segment SG is commonly connected to the + side electrode 14a, the second connection portion 20b of each segment SG is commonly connected to the − side electrode 14b, and two or more segments SG are connected. It is the form connected in parallel. In the example of FIG. 2, in each segment SG, a plurality of detection blocks 22 are arranged in a matrix, for example.

  As shown in FIGS. 3 and 4, each detection block 22 has a shape in which one detection band 24 having a certain width is meandered. As shown in FIG. 5A, the detection band 24 is composed of a mesh pattern 30 in which a large number of meshes 28 made of fine metal wires 26 are arranged. The shape of the mesh 28 is not limited to a quadrangle, and may be a geometric shape such as a hexagon. Examples of the meandering shape include a spiral shape shown in FIG. 3 and a wave shape (zigzag shape) shown in FIG.

  In particular, in the present embodiment, one segment SG is further divided into a plurality of regions (extents EX), and the detection bands 24 of the plurality of detection blocks 22 included in each extent EX are wired so as to be conductive. The example of FIG. 2 shows an example in which one segment SG (for example, the first segment SG1) is divided into seven extents EX (first extent EX1 to seventh extent EX7), and each extent EX is a rectangle extending in the vertical direction. The detection block 22 is arranged in the horizontal direction and 30 detection blocks 22 are arranged in the vertical direction.

  Between the adjacent extents EX, an insulating line 32 (see FIG. 3) extending in the vertical direction for electrically insulating the fine metal wires 26 is formed. In addition, meandering insulating lines 32 that electrically insulate the thin metal wires 26 are also formed between the detection bands 24 constituting the detection blocks 22 included in each extent EX, whereby the meandering detection band 24 is formed. It is.

  Accordingly, by supplying electricity from one end of the detection band 24 that constitutes the detection block 22 at one end of one extent EX, the detection band 24 that constitutes the detection block 22 at the other end of the extent EX. Electricity is conducted to the other end.

  As shown in FIGS. 2 and 3, adjacent extents EX are electrically connected by a relay wiring 34 formed in the periphery. As for the first segment SG1, as shown in FIG. 2, for the lower side 36a where the first connection portion 20a is located, the first peripheral wiring is connected to one end (the first connection portion 20a) of the detection band 24 in the first extent EX1. The positive electrode 14a is connected via 18a, one end of each detection band 24 in the second extent EX2 and the third extent EX3 is electrically connected by the first relay wiring 34a, and the fourth extent EX4 and the fifth extent EX5 are connected. One end of each detection band 24 is electrically connected by the second relay wiring 34b, and one end of each detection band 24 in the sixth extent EX6 and the seventh extent EX7 is electrically connected by the third relay wiring 34c. . Similarly, with respect to the upper side 36b where the second connection portion 20b is located, the negative electrode 14b is connected to the other end (second connection portion 20b) of the detection band 24 in the seventh extent EX7 via the second peripheral wiring 18b. The other ends of the detection bands 24 in the first extent EX1 and the second extent EX2 are electrically connected by the fourth relay wiring 34d, and the other ends of the detection bands 24 in the third extent EX3 and the fourth extent EX4 are the first. The fifth relay wiring 34e is electrically connected, and the other ends of the detection bands 24 in the fifth extent EX5 and the sixth extent EX6 are electrically connected by the sixth relay wiring 34f. These connection relationships are the same for the other segments SG (second segment SG2 to sixth segment SG6).

  Therefore, by flowing the sense current ia from the + side electrode 14a toward the − side electrode 14b, the sense current ia is supplied to the first connection portion 20a in each segment SG as shown in FIG. 2, FIG. 7 and FIG. Will proceed along the meander of the detection zone 24. That is, the sense current ia is the first connection portion 20a → the first extent EX1 → the fourth relay wiring 34d (upper side 36b) → the second extent EX2 → the first relay wiring 34a (lower side 36a) → the third extent EX3 → the fifth. Relay wiring 34e (upper side 36b) → fourth extent EX4 → second relay wiring 34b (lower side 36a) → fifth extent EX5 → sixth relay wiring 34f (upper side 36b) → sixth extent EX6 → third relay wiring 34c (lower side) 36a) → the seventh extent EX7 → the second connection portion 20b, and in each extent EX, a sense current flows along the meandering of the detection band 24. These operations (sense current flow) are performed almost simultaneously in each segment SG.

  Each detection block 22 is constituted by a meandering detection band 24 formed of a mesh pattern 30 of fine metal wires 26, and thus constitutes one minute resistor 38 as shown in FIG. 9A. Therefore, when a part or all of the detection block 22 is disconnected, the resistance value of the detection block 22 changes, and this change can be detected as an electrical change (voltage change).

  Similarly, as shown in FIG. 9B, each extent EX constitutes one resistor 40 in which a plurality of detection blocks 22 (micro-resistors 38) are arranged in series, and thus, for example, one or more detection blocks 22 When a part of the wire is disconnected, the resistance value of the extent EX changes, and this change in resistance value can be detected as an electrical change (voltage change).

  As shown in FIG. 10, the equivalent circuit of each segment SG has a circuit configuration in which a plurality of resistors 40 are connected in series between the first connection portion 20a and the second connection portion 20b. The detection circuit 42 in which a plurality of segments SG (SG1 to SG6) having the above-described circuit configuration are connected in parallel is configured. This makes it possible to reliably detect an attack or destruction for the purpose of entering in a segment unit and avoid a burden on the circuit system due to a large voltage change. This leads to downsizing and cost reduction of the detection circuit described later.

  Here, the configuration of the security sensor 50 to which the conductive film 10 is applied will be described with reference to FIGS. 11A and 11B.

  As shown in FIG. 11A, the security sensor 50 is connected to the detection circuit 42 of the conductive film 10, the + side electrode 14a and the − side electrode 14b, and the conductive portion 16 (the detection band 24, the detection block) of the conductive film 10. 22, extent EX, segment SG), and a detection circuit 52 for detecting a change in resistance value.

  The detection circuit 52 causes a sense current to flow from the + side electrode 14a toward the − side electrode 14b, and detects a voltage between the + side electrode 14a and the − side electrode 14b. If, for example, the conduction of one detection block 22 cannot be taken due to, for example, an attack on the conductive film 10 or a destructive action, the extent EX and the segment SG including the detection block 22 cannot be conducted. As a result, the combined resistance of the detection circuit 42 increases, and accordingly, the voltage between the + side electrode 14a and the − side electrode 14b also increases. By detecting this voltage change, for example, it is possible to detect that an attack or a destructive action has been performed on the window glass.

  For example, as shown in FIG. 11B, the detection circuit 52 is based on a comparator 54 that compares a voltage Vin (interelectrode voltage) between the + side electrode 14a and the − side electrode 14b with a reference voltage Vb, and an output voltage of the comparator 54. And a warning output unit 56 that outputs a warning sound or the like. The reference voltage Vb is set to a voltage that is slightly lower than the voltage between the electrodes when a range of one or more detection blocks 22 is cut or destroyed by an attack or destruction of the conductive film 10. As a result, when the detection band 24 of the conductive film 10 is not disconnected or when the detection band 24 is minutely disconnected due to changes over time, the negative power supply voltage -Vd is output from the comparator 54, and the warning output unit 56 No warning sound is output. Then, when the range of one or more detection blocks 22 is cut or destroyed by an attack or destruction of the conductive film 10, the interelectrode voltage Vin becomes higher than the reference voltage Vb. The power supply voltage Vd on the side is output, so that a warning sound or the like is output from the warning output unit 56.

  Here, the preferable aspect of the mesh pattern 30 which comprises the detection zone | band 24 is demonstrated.

  First, the line width Wa (see FIG. 5B) of the mesh pattern 30 is preferably 100 μm or less, and more preferably the upper limit value is 80 μm or less, 50 μm or less, 30 μm or less, 21 μm or less, 14 μm or less, 7 μm or less, and the lower limit value is 1 μm or more. 3 μm or more and 5 μm or more. When the line width is less than the lower limit, the conductivity is insufficient. Therefore, when the conductive film 10 is used for the detection unit (detection circuit 42) of the security sensor 50, the detection sensitivity is insufficient. . On the other hand, when the upper limit is exceeded, the fine metal wires 26 become conspicuous, and the visibility is deteriorated. Therefore, the detection sensitivity and the visibility are improved by being in the above range.

  Similarly to the line width Wa of the mesh pattern 30, the width Wb (see FIG. 5B) of the insulating line 32 is preferably 100 μm or less, more preferably 80 μm or less, 50 μm or less, 30 μm or less, 21 μm or less, 14 μm or less. 7 μm or less, and the lower limit is 1 μm or more, 3 μm or more, and 5 μm or more. Further, the width Wc (see FIG. 5B) of the detection band 24 is preferably 3 mm or less, more preferably, the upper limit value is 2 mm or less and 1.4 mm or less, and the lower limit value is 0.5 mm or more and 1 mm or more.

  The total light transmittance of the mesh pattern 30 is preferably 50% or more, and more preferably 55% or more, 60% or more, 62% or more, 68% or more, 76% or more, or 82% or more. Thereby, it becomes possible to keep transparency favorable.

  The arrangement pitch of the meshes 28 of the mesh pattern 30 is preferably 1000 μm or less, and more preferably, the upper limit value is 200 μm or less, 190 μm or less, 150 μm or less, and the lower limit value is 100 μm or more, 120 μm or more. When the arrangement pitch is in the above range, it is possible to keep the transparency better, and the thin metal wires 26 do not stand out when attached to a window glass or the like, and there is no sense of incongruity.

Of the sides of the detection block 22, the length La (see FIG. 4) of the longest side is preferably 20 mm or less, more preferably 15 mm or less, 10 mm or less, or 8 mm or less, and a lower limit value of 5 mm. This is 7 mm or more. If the length of the sides is less than the above lower limit, because the detection sensitivity becomes too high, for example would be detected at 1mm approximately disconnection due to degradation of the metal thin wires of aging, false alarm audible beep is generated There is a fear. Of course, when it is desired to increase the detection sensitivity, it may be 5 mm or less. On the other hand, when the above upper limit is exceeded, the detection sensitivity is conversely lowered, and there is a risk that attacks and destruction (breaking of 5 mm or more) aimed at intrusion cannot be detected. Therefore, by being in the above range, it is possible to reliably detect an attack or destruction (disconnection of 5 mm or more) for the purpose of entering.

  In particular, it is preferable to adopt the following configuration in order to reliably detect an attack or destruction (breaking of 5 mm or more) for the purpose of intrusion and not detect any other minute disconnection.

  That is, as shown in FIG. 5C, for example, in the horizontal cutting, one detection is performed by cutting a size corresponding to the length La of the detection block 22 (lateral direction) × the width Wc of the detection band 24. Although the conduction of the block 22 can be cut off, if the width Wc of the detection band 24 is extremely narrow, the conduction of the detection block 22 is easily cut off and detected as an attack or a destructive action for the purpose of intrusion by mistake. There is a risk of false detection.

  Therefore, as shown in FIG. 5C, the mesh pattern 30 of the detection band 24 includes three or more in the direction db orthogonal to the conduction direction (conduction direction da) of the current of the metal thin wire 26 within the width Wc of the detection band 24. A mesh 28 is preferably present. More preferably, there are 3 or more and 10 or less meshes 28 in the direction db orthogonal to the conductive direction da, and more preferably 3 or more and 5 or less in the direction db orthogonal to the conductive direction da. That is, the mesh 28 exists.

  Thereby, it is possible to reliably detect an attack or destruction for the purpose of intrusion and not detect any other minute disconnection.

  Moreover, as shown to FIG. 5A, 30 degrees-60 degrees can be employ | adopted as angle (theta) with respect to the horizontal direction of the mesh pattern 30, In this case, angle (theta) may be 45 degrees and other than that. It may be an angle. By adopting an angle other than 45 °, the cut shape of the mesh pattern 30 by the insulating lines 32 extending in the horizontal direction and the vertical direction is not regular, and the mesh pattern 30 can be made less noticeable. In the present embodiment, the angle θ is set to 35 °.

  In the example described above, as shown in FIG. 2, the conductive portion 16 is divided into six segments SG (SG1 to SG6), and the same number of detection blocks 22 included in each segment SG (seven in the horizontal direction and 30 in the vertical direction). The first connection portion 20a is positioned on the lower side 36a and the second connection portion 20b is positioned on the upper side 36b. However, the number of segments SG may be one or other than six. Further, the number of detection blocks 22 included in each segment SG may be different. Alternatively, the first connection portion 20a may be positioned on the upper side 36b and the second connection portion 20b may be positioned on the lower side 36a, or the first connection portion 20a may be positioned on the left side (or right side) and the right side (or The second connection portion 20b may be positioned on the left side. FIG. 12 shows a conductive film 10 according to one modification. In the conductive film 10 according to this modification, the conductive portion 16 is divided into five segments SG (first segment SG1 to fifth segment SG5), and the same number of detection blocks 22 included in the first segment SG1 to the fourth segment SG4. (9 in the horizontal direction and 31 in the vertical direction), the number of detection blocks 22 included in the fifth segment SG5 is 7 in the horizontal direction and 31 in the vertical direction, and the first connection portion 20a is provided on the upper side 36b. The second connecting portion 20b is positioned on the lower side 36a.

  Next, the configuration of each layer of the above-described conductive film 10 will be described.

[Support]
Examples of the support 12 of the conductive film 10 include a plastic film and a plastic plate. Examples of the raw material for the plastic film and the plastic plate include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); polyolefins such as polyethylene (PE), polypropylene (PP), polystyrene, EVA; Vinyl resins such as vinyl chloride and polyvinylidene chloride; others, polyether ether ketone (PEEK), polysulfone (PSF), polyether sulfone (PES), polycarbonate (PC), polyamide, polyimide, acrylic resin, triacetyl cellulose (TAC) or the like can be used. When the manufactured conductive film 10 requires transparency, the total visible light transmittance is preferably 70 to 100%, more preferably 85 to 100%, and 90 to 100%. More preferably, PET, PC, and acrylic resin can be suitably used. Moreover, PET can be used suitably from a viewpoint of workability. The support 12 may be colored according to the purpose.

  The plastic film and the plastic plate can be used as a single layer, but can also be used as a multilayer film in which two or more layers are combined.

  For the purpose of firmly bonding the conductive portion 16 to the support 12, chemical treatment, mechanical treatment, corona discharge treatment, flame treatment, ultraviolet treatment, high frequency treatment, glow discharge treatment, It is preferable to perform surface activation treatment such as active plasma treatment, laser treatment, mixed acid treatment, and ozone acid treatment.

  For example, as will be described later, when a silver halide-containing emulsion layer is provided on the support 12 and this emulsion layer is exposed and developed to form a conductive portion 16 composed of a metal silver portion, the support 12 and the conductive layer 16 are electrically conductive. (1) A method of directly providing a silver halide-containing emulsion layer on the surface after the surface activation treatment, (2) once the surface Examples thereof include a method of providing an undercoat layer after the activation treatment and providing a silver halide-containing emulsion layer on the undercoat layer. Especially, the adhesiveness of the support body 12 and the electroconductive part 16 can be improved more by the said method (2).

The undercoat layer may be a single layer or two or more layers. The undercoat layer may be made of a copolymer starting from a monomer selected from vinyl chloride, vinylidene chloride, butadiene, methacrylic acid, acrylic acid, itaconic acid, maleic anhydride, and the like. , Epoxy resin, grafted gelatin, nitrocellulose, gelatin, but preferably contains gelatin. The undercoat layer may contain resorcin and p-chlorophenol as compounds that swell the support 12. In the case where the undercoat layer contains gelatin, the undercoat layer may contain a chromium salt (such as chromium alum), aldehydes (formaldehyde, glutaraldehyde, etc.), isocyanates, active halogen compounds (2, 4-dichloro-6-hydroxy-S-triazine, etc.), epichlorohydrin resin, active vinyl sulfone compound and the like. The undercoat layer may contain SiO ₂ , TiO ₂ , inorganic fine particles, or polymethyl methacrylate copolymer fine particles as a matting agent.

[Conductive part]
As described above, in the conductive film 10, the conductive portion 16 is provided on the support 12. The conductive film constituting the conductive part 16 may be provided on one side of the support 12 or may be provided on both sides. The conductive film can be formed by exposing and developing a silver salt-containing emulsion layer containing silver halide and a binder coated on the support 12 in a desired pattern. By making the pattern a mesh pattern 30 having intersections of a large number of lattices made of fine metal wires 26, a conductive film constituting the conductive part 16 can be formed, thereby improving the light transmittance of the conductive part 16. It can also be made. The conductive film may be formed by exposing and developing the entire surface of the silver salt-containing emulsion layer.

  The silver salt-containing emulsion layer may contain additives such as a solvent and a dye in addition to silver halide and a binder. The silver salt-containing emulsion layer may be a single layer or two or more layers. The thickness of the emulsion layer is preferably 0.05 to 20 μm, more preferably 0.1 to 10 μm.

(Silver salt)
The silver salt in the silver salt-containing emulsion layer is silver halide. In the present embodiment, it is preferable to use a silver halide having excellent characteristics as an optical sensor, and a technique used in a silver salt photographic film or photographic paper, a printing plate making film, a photomask emulsion mask, etc. Can also be used in this embodiment.

  The halogen element contained in the silver halide may be any of chlorine, bromine, iodine and fluorine, or a combination thereof. For example, silver halide mainly composed of AgCl, AgBr, and AgI can be preferably used. Further, silver halides mainly composed of silver chlorobromide, silver iodochlorobromide, and silver iodobromide can also be suitably used. Here, “a silver halide mainly composed of AgBr” refers to a silver halide in which the molar fraction of bromide ions in the silver halide composition is 50% or more. That is, silver halide grains mainly composed of AgBr may contain iodide ions and chloride ions in addition to bromide ions. For silver halides mainly composed of other silver halides (AgCl, AgI, etc.), the above “AgBr” is replaced with the other silver halides.

Although there is no restriction | limiting in particular in content of the silver halide in a silver salt containing emulsion layer, It is preferable that it is 0.1-40 g / m < ² > in conversion to silver, and it is 0.5-25 g / m < ² >. Is more preferable, 3 to 25 g / m ² , 5 to 20 g / m ² , and 7 to 15 g / m ² are more preferable.

(binder)
The silver salt-containing emulsion layer contains a binder for the purpose of uniformly dispersing silver halide grains and assisting the adhesion between the silver salt-containing emulsion layer and the support 12. As the binder, either a water-insoluble polymer or a water-soluble polymer may be used, but a water-soluble polymer is preferably used. Specifically, gelatin, polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), polysaccharides such as starch, cellulose and derivatives thereof, polyethylene oxide, polysaccharides, polyvinylamine, chitosan, polylysine, polyacrylic acid, polyalginic acid, Polyhyaluronic acid, carboxycellulose and the like can be used as a binder for the silver salt-containing emulsion layer.

  In the present embodiment, gelatin is suitably used as the binder for the silver salt-containing emulsion layer.

  There is no restriction | limiting in particular in content of the binder in the said silver salt containing emulsion layer, Although it can determine suitably in the range which can exhibit a dispersibility and adhesiveness, it is 1 / (silver (Ag) / binder (volume ratio)). It is preferably 1 to 4/1, and more preferably 1.5 / 1 to 4/1. By setting the silver / binder (volume ratio) in the silver salt-containing emulsion layer within the above range, breakage of the metallic silver portion after molding can be more reliably suppressed.

(solvent)
The solvent used for forming the silver salt-containing emulsion layer is not particularly limited. For example, water, organic solvents (for example, alcohols such as methanol, ketones such as acetone, amides such as formamide, sulfoxides such as dimethyl sulfoxide, etc. , Esters such as ethyl acetate, ethers, etc.), ionic liquids, and mixed solvents thereof.

  The content of the solvent used in the silver salt-containing emulsion layer is in the range of 30 to 90 parts by mass and 50 to 80 parts by mass with respect to 100 parts by mass in total of components other than the solvent contained in the silver salt-containing emulsion layer. The range of parts is preferred.

(Acrylic latex)
The silver salt-containing emulsion layer can contain an acrylic latex from the viewpoint of improving the adhesion to the support 12. Examples of the acrylic latex include a dispersion in an aqueous medium of a polymer containing at least one acrylic monomer selected from methyl acrylate, ethyl acrylate, ethyl methacrylate, methyl methacrylate, acetoxyethyl acrylate, and the like. .

  The latex / gelatin (mass ratio) in the silver salt-containing emulsion layer is preferably 0.15 / 1 to 2.0 / 1, and more preferably 0.5 / 1 to 1.0 / 1.

(Other additives)
The silver salt-containing emulsion layer may further contain various additives. Examples of the additive include a thickener, an antioxidant, a matting agent, a lubricant, an antistatic agent, a nucleation accelerator, a spectral sensitizing dye, a surfactant, an antifoggant, a hardening agent, and an anti-black spot agent. Etc.

[Protective layer]
In the conductive film 10, a protective layer may be provided on the conductive portion 16. By providing the protective layer, dropping of the conductive portion 16 (conductive film) from the conductive film 10 can be further suppressed. The protective layer is preferably made of gelatin or a polymer. The thickness of the protective layer is preferably 0.02 to 0.2 μm, more preferably 0.05 to 0.1 μm. In addition, the protective layer may be provided directly on the conductive portion 16, or may be provided on the conductive portion 16 after an undercoat layer is provided thereon.

  Next, the production of the conductive film 10 will be described.

[Preparation of conductive film]
The conductive film 10 is formed by exposing a silver salt-containing emulsion layer provided on a support 12 to a desired pattern and developing it, and forming a conductive film including a metal silver portion having a desired shape on the support 12. It is obtained by forming.

  When the mesh pattern 30 is formed on the support 12, a linear lattice pattern having a mesh shape and a shape in which the straight lines are substantially orthogonal or a conductive portion between the intersecting portions has at least one curve by exposure and development processing. It is preferable to form a wavy grating pattern or the like. When the shape of the metal silver part of the conductive part 16 is the mesh pattern 30, the pitch of the mesh pattern 30 (the total of the line width of the metal silver part and the width of the opening part) is preferably 1000 μm or less.

(Pattern exposure)
The method for exposing the silver salt-containing emulsion layer in a pattern may be performed by surface exposure using a photomask or by scanning exposure using a laser beam. At this time, refractive exposure using a lens or reflection exposure using a reflecting mirror may be used, and exposure methods such as contact exposure, proximity exposure, reduced projection exposure, and reflection projection exposure can be used.

(Development processing)
The silver salt-containing emulsion layer is further developed after exposure. The development processing can be performed by a normal development processing technique used for silver salt photographic film, photographic paper, printing plate-making film, photomask emulsion mask, and the like.

  In the present embodiment, by performing exposure and development processing, a conductive portion (metal silver portion) is formed in the exposed portion, and an opening portion (light transmissive portion) is formed in the unexposed portion. The development process for the emulsion layer can include a fixing process performed for the purpose of removing and stabilizing the silver salt in the unexposed area. For the fixing process on the emulsion layer, a fixing process technique used for a silver salt photographic film, photographic paper, a printing plate making film, a photomask emulsion mask, or the like can be used.

(Laser etching)
The conductive portion 16 (conductive film) of the conductive film 10 is irradiated with a laser beam to a portion that becomes the insulating line 32, and the metal in this portion is selectively removed. As the conditions used here, the selection of the laser wavelength is particularly important. By selecting 400 nm or more as the laser wavelength, the conductive film can be etched without damage to the support 12, and more preferably 500 nm or more. As a laser beam applied to the conductive film, a YAG laser, a carbon dioxide gas laser, or the like can be used. Irradiation of the laser beam to the conductive film can be performed by a laser irradiation apparatus provided with a scanning mechanism in the X and Y directions controlled by a computer. In this case, for example, information on the pattern shape of the insulation line 32 set in advance is input to the memory of the computer by offline teaching, and the information on the pattern shape is read from the memory when the laser irradiation apparatus is driven. On the basis of this, the insulating line 32 may be formed in the conductive film by irradiating the conductive film with laser light while controlling the scanning mechanism.

  When the insulating line 32 is formed by performing the laser etching described above, the thickness of the conductive film is preferably 5 μm or less. If it is too thick, the output of the laser beam required for etching must be increased, and the support 12 may be damaged, which is not preferable.

  In addition, regarding production of the conductive film 10, it can be used in combination with the techniques of the publications and international pamphlets described in Tables 1 and 2 below. Notations such as “JP,” “Gazette” and “No. Pamphlet” are omitted.

  In this embodiment mode, it is desirable to perform steam treatment, calendar treatment, and xenon irradiation treatment in order to improve conductivity and moldability.

<Xenon irradiation>
Pulsed light from a xenon flash lamp can be applied to the metallic silver portion after the development processing. The irradiation amount is preferably 1 J or more and 1500 J or less per pulse, more preferably 100 J or more and 1000 J or less, and further preferably 500 J or more and 800 J or less. The amount of irradiation can be measured using a general ultraviolet illuminometer. As a general ultraviolet illuminometer, for example, an illuminometer having a detection peak at 300 to 400 nm can be used.

  Examples of the light applied to the metallic silver part include ultraviolet rays, electron beams, X-rays, γ rays, and radiation rays such as infrared rays. From the viewpoint of versatility, ultraviolet rays are preferable. The light source for irradiating ultraviolet rays is not particularly limited, and examples thereof include a high-pressure mercury lamp, a metal halide lamp, and a flash lamp (for example, a xenon flash lamp). In the present embodiment, a xenon flash lamp is preferable from the viewpoint of improving the conductivity and moldability of metallic silver and versatility, for example, a xenon flash lamp manufactured by Ushio Inc.

  The number of pulsed light irradiations is preferably 1 or more and 50 or less, and more preferably 1 or more and 30 or less.

  The xenon irradiation treatment is performed in a humid and hot atmosphere under humidity control conditions with a relative humidity of 5% or more and no condensation. The reason why the conductivity / moldability is improved is not yet clear, but at least a part of the water-soluble binder easily moves finely as the humidity increases, and the bonding sites between metals (conductive substances) increase. It is considered a thing.

  The relative humidity in the humid heat atmosphere is preferably 5% to 100%, more preferably 40% to 100%, still more preferably 60% to 100%, and particularly preferably 80% to 100%. .

<Smoothing process (calendar process)>
By performing a smoothing treatment for smoothing the metallic silver portion after development, the bonding portion of the metallic particles in the metallic silver portion increases, and the conductivity and moldability of the metallic silver portion are significantly increased.

  The smoothing process can be performed by, for example, a calendar roll. The calendar roll is usually composed of a pair of rolls. Hereinafter, the smoothing process using the calendar roll is referred to as a calendar process.

  As a roll used for the calendar treatment, a plastic roll or a metal roll such as epoxy, polyimide, polyamide, polyimide amide or the like is used. In particular, when the silver salt emulsion layer is provided on both sides, it is preferable to treat with metal rolls. When a silver salt emulsion layer is provided on one side, a combination of a metal roll and a plastic roll can be used from the viewpoint of preventing wrinkles. The lower limit of the linear pressure is preferably 1960 N / cm (200 kgf / cm) or more, more preferably 2940 N / cm (300 kgf / cm) or more. The upper limit of the linear pressure is preferably 6860 N / cm (700 kgf / cm) or less. Here, the linear pressure (load) is a force applied per 1 cm of the film sample to be calendered.

  The application temperature of the calendar process represented by the calendar roll is preferably 10 ° C. (no temperature control) to 100 ° C., and the more preferable temperature varies depending on the line density and shape of the metal mesh pattern or metal wiring pattern, and the binder type. Is in the range of approximately 10 ° C. (no temperature control) to 50 ° C.

<Hot water treatment or steam treatment>
After forming a silver mesh layer (mesh pattern 30) composed of developed silver on the support 12, a hot water treatment in which it is immersed in warm water or heated water at a temperature higher than that, or a steam treatment in contact with water vapor is performed. Is preferred. Thereby, electroconductivity and moldability can be improved simply in a short time. It is considered that a part of the water-soluble binder is removed and the bonding sites between developed silver (conductive substances) are increased.

  Although this process can be performed after the development process, it is desirable to perform the process after the smoothing process.

  The temperature of the hot water used in the hot water treatment is preferably 60 ° C. or higher and 100 ° C. or lower, more preferably 80 ° C. to 100 ° C. Further, the temperature of the water vapor used in the steam treatment is preferably 100 ° C. or more and 140 ° C. or less at 1 atmosphere. The treatment time of the hot water treatment or the steam treatment varies depending on the type of the water-soluble binder to be used, but when the size of the support 12 is 60 cm × 1 m, it is preferably about 10 seconds to about 5 minutes, and about 1 minute to about 5 Minutes are more preferred.

  Hereinafter, the present invention will be described more specifically with reference to examples of the present invention. In addition, the material, usage-amount, ratio, processing content, processing procedure, etc. which are shown in the following Examples can be changed suitably unless it deviates from the meaning of this invention. Accordingly, the scope of the present invention should not be construed as being limited by the specific examples shown below.

  For Examples 1 to 28, one detection block when changing the arrangement pitch of the mesh 28 of the mesh pattern 30 and the line width of the mesh pattern 30, one extent, one segment, the entire resistance value, and one place are cut. A resistance change when the conduction of one detection band included in one segment could not be performed (hereinafter referred to as a resistance change when one segment was cut) and a transmittance were confirmed.

Example 1
[Preparation of emulsion]
・ 1 liquid:
750 mL of water
20g phthalated gelatin
Sodium chloride 3g
1,3-Dimethylimidazolidine-2-thione 20mg
Sodium benzenethiosulfonate 10mg
Citric acid 0.7g
・ Two liquids:
300 mL water
150 g silver nitrate
・ Three liquids:
300 mL water
Sodium chloride 38g
Potassium bromide 32g
Hexachloroiridium (III) potassium (0.005% KCl 20% aqueous solution) 5 mL
Ammonium hexachlororhodate (0.001% NaCl 20% aqueous solution) 7 mL
Potassium hexachloroiridium (III) (0.005% KCl 20% aqueous solution) and ammonium hexachlororhodate (0.001% NaCl 20% aqueous solution) used in the three liquids were mixed with their respective complex powders, KCl 20% aqueous solution and NaCl 20%, respectively. It was dissolved in an aqueous solution and prepared by heating at 40 ° C. for 120 minutes.

  To 1 liquid maintained at 38 ° C. and pH 4.5, 90% of the 2 and 3 liquids were simultaneously added over 20 minutes with stirring to form 0.16 μm core particles. Subsequently, the following 4th and 5th liquids were added over 8 minutes, and the remaining 10% of the 2nd and 3rd liquids were added over 2 minutes to grow to 0.21 μm. Further, 0.15 g of potassium iodide was added and ripened for 5 minutes to complete grain formation.

・ 4 liquids:
100mL water
Silver nitrate 50g
・ 5 liquids:
100mL water
Sodium chloride 13g
Potassium bromide 11g
Yellow blood salt 5mg
Then, it washed with water by the flocculation method according to a conventional method. Specifically, the temperature was lowered to 35 ° C., and the pH was lowered using sulfuric acid until the silver halide precipitated (the pH was in the range of 3.6 ± 0.2). Next, about 3 liters of the supernatant was removed (first water washing). Further, 3 liters of distilled water was added, and sulfuric acid was added until the silver halide settled. Again, 3 liters of the supernatant was removed (second water wash). The same operation as the second water washing was further repeated once (third water washing) to complete the water washing / desalting process. The emulsion after washing with water and desalting was adjusted to pH 6.4 and pAg 7.5, 100 mg of 1,3,3a, 7-tetraazaindene as a stabilizer, and Proxel (trade name, manufactured by ICI Co., Ltd. as a preservative). ) 100 mg was added. Finally, a silver iodochlorobromide cubic grain emulsion containing 70 mol% of silver chloride and 0.08 mol% of silver iodide and having an average grain diameter of 0.22 μm and a coefficient of variation of 9% was obtained. The final emulsion was pH = 6.4, pAg = 7.5, conductivity = 4000 μS / cm, density = 1.4 × 10 ³ kg / m ³ , and viscosity = 20 mPa · s.

[Preparation of emulsion layer coating solution]
The following compound (Cpd-1) 8.0 × 10 ⁻⁴ mol / mol Ag, 1,3,3a, 7-tetraazaindene 1.2 × 10 ⁻⁴ mol / mol Ag was added to the emulsion and mixed well. . Next, the following compound (Cpd-2) was added as necessary for adjusting the swelling ratio, and the coating solution pH was adjusted to 5.6 using citric acid.

[Support]
As the support 12, a surface of the PET film having a rectangular shape as viewed from above and subjected to corona discharge treatment on both sides of a PET film having a thickness of 100 μm and subjected to surface hydrophilization treatment was used.

[Preparation of photosensitive film]
Corona discharge treated PET film described above and applied so that the emulsion layer coating solution Ag7.8g / ^{m 2,} gelatin 1.0 g / ^{m 2.}

  The resulting photosensitive film had an emulsion layer silver / binder volume ratio (silver / GEL ratio (vol)) of 1/1.

[Exposure and development processing]
Next, a grid-like photomask line / space = 900 μm / 100 μm (pitch 1000 μm) capable of giving a developed silver image of line / space = 100 μm / 900 μm to the photosensitive film through a photomask having a grid-like space. It exposed using the parallel light which used the mercury lamp as the light source. At this time, exposure for forming the + side electrode 14a and the − side electrode 14b, the relay wiring 34, and the like was also performed. Then, the process including the process of fixing, washing with water, and drying was performed.

(Developer composition)
The following compounds are contained in 1 liter of developer.
Hydroquinone 15g / L
Sodium sulfite 30g / L
Potassium carbonate 40g / L
Ethylenediamine ・ tetraacetic acid 2g / L
Potassium bromide 3g / L
Polyethylene glycol 2000 1g / L
Potassium hydroxide 4g / L
Adjust to pH 10.5

(Fixing solution composition)
The following compounds are contained in 1 liter of the fixing solution.
300 ml of ammonium thiosulfate (75%)
Ammonium sulfite monohydrate 25g / L
1,3-Diaminopropane ・ tetraacetic acid 8g / L
Acetic acid 5g / L
Ammonia water (27%) 1g / L
Potassium iodide 2g / L
Adjust to pH 6.2

  Thus, the conductive film 10 having the conductive portion 16, that is, the conductive portion 16 is partitioned by the detection band 24 having the mesh pattern 30, the detection block 22, the extent EX, and the segment SG, and the + side electrode 14a and the − side electrode 14b. The conductive film 10 having the relay wiring 34 and the like was obtained. The mesh pattern 30 has a thickness of 2 μm, the mesh pattern 30 has a line width Wa of 100 μm, and the mesh 28 has an arrangement pitch of 1000 μm.

[Laser etching]
Laser etching is performed on the conductive portion 16 (conductive film) of the conductive film 10 described above to divide into a spiral insulating line 32, a plurality of extents EX, and a plurality of segments SG as shown in FIGS. As shown in FIG. 2, the first segment SG1 to the sixth segment SG6, the first extent EX1 to the seventh extent EX7, the plurality of detection blocks 22 and the detection band 24 are formed. The conductive film which concerns on Example 1 which has this was produced. The laser etching was performed by irradiating the laser beam so that the spot diameter of the laser beam was 30 μm, that is, the width Wb of the insulating line 32 was 30 μm.

(Laser etching: processing machine)
Laser: Spectra Physics HIPPO 532-11W galvano scanner: YE-DATA fθ lens: F = 100

(Processing conditions)
Frequency: 30kHz
Processing point output: 140 mW
Scanning speed: 300mm / sec
Repeat scan: 1 time

(Examples 2 to 4)
Examples 2, 3, and 4 were produced by the same method as Example 1 described above, except that the line width Wa of the mesh pattern 30 was 80 μm, 50 μm, and 30 μm.

(Example 5)
Example 5 was produced by the same method as Example 1 described above except that the arrangement pitch of the meshes 28 of the mesh pattern 30 was 300 μm and the line width Wa of the mesh pattern 30 was 80 μm.

(Examples 6 to 8)
Examples 6, 7, and 8 were produced by the same method as Example 5 described above except that the line width Wa of the mesh pattern 30 was 50 μm, 30 μm, and 21 μm.

Example 9
Example 9 was produced by the same method as Example 1 described above except that the arrangement pitch of the meshes 28 of the mesh pattern 30 was 200 μm and the line width Wa of the mesh pattern 30 was 50 μm.

(Examples 10 to 12)
Examples 10, 11, and 12 were produced by the same method as in Example 9 described above, except that the line width Wa of the mesh pattern 30 was 30 μm, 21 μm, and 14 μm.

(Example 13)
Example 13 was produced by the same method as Example 1 described above except that the arrangement pitch of the meshes 28 of the mesh pattern 30 was 190 μm and the line width Wa of the mesh pattern 30 was 30 μm.

(Examples 14 to 16)
Examples 14, 15, and 16 were produced by the same method as Example 13 described above, except that the line width Wa of the mesh pattern 30 was set to 21 μm, 14 μm, and 7 μm.

(Example 17)
Example 17 was produced by the same method as Example 1 described above except that the arrangement pitch of the meshes 28 of the mesh pattern 30 was 150 μm and the line width Wa of the mesh pattern 30 was 21 μm.

(Examples 18 to 20)
Examples 18, 19, and 20 were produced by the same method as Example 17 described above, except that the line width Wa of the mesh pattern 30 was 14 μm, 7 μm, and 5 μm.

(Example 21)
Example 21 was produced in the same manner as in Example 1 except that the arrangement pitch of the meshes 28 of the mesh pattern 30 was 120 μm and the line width Wa of the mesh pattern 30 was 21 μm.

(Examples 22 to 24)
Examples 22, 23, and 24 were produced by the same method as in Example 21 described above, except that the line width Wa of the mesh pattern 30 was 14 μm, 7 μm, and 5 μm.

(Example 25)
Example 25 was produced by the same method as Example 1 described above except that the arrangement pitch of the meshes 28 of the mesh pattern 30 was 100 μm and the line width Wa of the mesh pattern 30 was 14 μm.

(Examples 26 to 28)
Examples 26, 27, and 28 were produced by the same method as Example 25 described above, except that the line width Wa of the mesh pattern 30 was 7 μm, 5 μm, and 3 μm.

  In Examples 1 to 28 described above, the width Wc of the detection band 24 is in the range of 1 mm to 3 mm, and the width Wc of the detection band 24 is orthogonal to the conductive direction da of the thin metal wire 26. It adjusted so that the mesh 28 of 3 or more and 10 or less might exist in the direction db. Moreover, it adjusted so that the length La (refer FIG. 4) of the longest side among the sides of the detection block 22 might be 5 mm or more and 20 mm or less.

[Evaluation]
(resistance)
For Examples 1 to 28, the resistance value of one detection block 22, the resistance value of one extent EX, the resistance value of one segment SG were measured, and the total resistance value was further determined.

  The resistance value of one detection block 22 is a resistance value between one end and the other end of the detection band 24 constituting the one detection block 22, and the resistance value of one extent EX is the value on the lower side 36a side of one extent EX. The resistance value between one end of the detection band 24 and the other end of the detection band 24 on the upper side 36b side was measured. The resistance value of 1 segment SG measured the resistance value between the 1st connection part 20a and the 2nd connection part 20b of 1 segment SG. The resistance value between the + side electrode 14a and the − side electrode 14b was measured as the overall resistance value.

(Resistance change when one point breaks)
The resistance value between the + side electrode 14a and the − side electrode 14b when one of the 6 segments connected in parallel is cut is measured, and the difference between this resistance value and the overall resistance value before cutting is determined. The resistance change.

(Light transmittance)
The light transmittance was measured about Examples 1-28.

[Evaluation results]
The evaluation results are shown in Table 3.

  From Table 3, all of Examples 1 to 28 had a transmittance of 50% or more. In particular, Examples 3, 4, 8, 12, 15, 16, 19, 20, 23, 24, and 26 to 28 have a transmittance of 76% or more. Among them, Examples 4, 16, 20, and 28 are examples. The transmittance was 82% or more.

  In addition, the resistance change when one portion was cut was lowest, for example, in the 6.8 k ohm of Example 5, and highest, for example, 56 k ohm in Examples 4 and 28. For example, when a current of 1 mA is applied as the sensor current, the voltage change is 6.8 V in Example 5 and 56 V in Examples 4 and 28. Normally, a TTL level (5 V or less) FET (field effect transistor) is connected to the input stage of the comparator. Therefore, in consideration of the gate breakdown voltage of the transistor, is a step-down circuit installed on the input side of the comparator? Alternatively, it is necessary to use a high-voltage transistor as the transistor, and there is a concern about an increase in the size of the detection circuit. Therefore, if a current of 0.5 mA or less is passed as the sense current, for example, a small and inexpensive comparator can be used. In addition, power consumption (standby power consumption) can be significantly reduced. For example, in the case of 6.8 k ohm in Example 5, a voltage change of 3.4 V is caused by passing a sense current of 0.5 mA, and in the case of 56 k ohm in Examples 4 and 28, a sense current of 0.08 mA is obtained. The voltage change of 4.48V is caused by flowing a current, and a small and inexpensive comparator can be used. Of course, the current value of the sense current may be further reduced in consideration of cutting at a plurality of locations.

  In addition, the conductive film for security sensors, the security sensor, and the conductive film according to the present invention are not limited to the above-described embodiments, and various configurations can be adopted without departing from the gist of the present invention. is there.

DESCRIPTION OF SYMBOLS 10 ... Conductive film 12 ... Support body 14a ... + side electrode 14b ...-side electrode 16 ... Conductive part 18a ... 1st peripheral wiring 18b ... 2nd peripheral wiring 20a ... 1st connection part 20b ... 2nd connection part 22 ... Detection Block 24 ... Detection band 26 ... Metal fine wire 28 ... Mesh 30 ... Mesh pattern 32 ... Insulation line 34 ... Relay wiring 34a to 34f ... First relay wiring to sixth relay wiring 38 ... Micro resistor 40 ... Resistor 42 ... Detection circuit 50 ... Crime prevention sensor 52 ... Detection circuit 54 ... Comparator 56 ... Warning output unit

Claims (16)

A support;
A conductive portion formed on one main surface of the support and electrically connected to the + side electrode and the − side electrode;
The conductive portion has a detection block of a predetermined shape formed over a first connection portion with the + side electrode and a second connection portion with the-side electrode,
The detection block can detect an electrical change in the detection block due to an attack from the outside,
The detection block has a longest side length of 20 mm or less, and is a conductive film for a security sensor. In the conductive film for security sensors according to claim 1,
The conductive film for a security sensor, wherein the detection block is configured by a mesh pattern in which a large number of meshes made of fine metal wires are arranged. In the conductive film for security sensors according to claim 1 or 2,
A conductive film for a security sensor, wherein ten or more detection blocks are arranged in the electrical connection direction. In the conductive film for security sensors according to any one of claims 1 to 3,
The conductive part is separated into two or more segments;
Each of the segments has the first connection part and the second connection part,
A conductive film for a security sensor, wherein ten or more detection blocks are arranged from the first connection portion to the second connection portion. In the conductive film for security sensors according to claim 4,
The first connection portion of each of the segments is connected in common to the + side electrode,
The second connection portions of the segments are connected in common to the negative electrode,
A conductive film for a security sensor, wherein two or more of the segments are connected in parallel. In the conductive film for security sensors according to claim 4 or 5,
Each of the segments has a plurality of extents extending in the conductive direction,
Each extent has 10 or more detection blocks arranged therein, and is a conductive film for a security sensor. In the conductive film for security sensors according to claim 6,
The plurality of extents in each of the segments are connected in series via relay wires, respectively. In the conductive film for security sensors according to claim 2,
The detection block is:
A conductive film for a security sensor, comprising a detection band formed by meandering electrically insulating lines formed in the mesh pattern. The conductive film for security sensor according to claim 8,
A conductive film for a security sensor, wherein the width of the detection band is 3 mm or less. In the conductive film for security sensors according to claim 8 or 9,
A conductive film for a security sensor, wherein a width of the electrically insulating line is 100 μm or less. In the conductive film for security sensors according to claim 1,
Two or more minute resistors by the detection block are connected in series to form one resistor,
Two or more resistors are connected in series to form one resistor group,
One end of the resistor group is the first connection portion electrically connected to the + side electrode;
A conductive film for a security sensor, wherein the other end of the resistor group is the second connection portion electrically connected to the negative electrode. The conductive film for security sensor according to claim 11,
Each of the first connection portions of the two or more resistor groups is connected in common to the + side electrode;
Each of the second connection portions of the two or more resistor groups is commonly connected to the negative electrode;
A conductive film for a security sensor, wherein two or more resistor groups are connected in parallel. A detection circuit configured by the detection block of the conductive film for a security sensor according to any one of claims 1 to 12,
A detection circuit connected to the + side electrode and the − side electrode and detecting a change in resistance value of the detection block of the conductive film for security sensor;
A security sensor characterized by comprising: The security sensor according to claim 13,
A security sensor, wherein the detection circuit is a parallel circuit. The security sensor according to claim 13 or 14,
The security circuit is characterized in that the detection circuit detects at least one of disconnection of the detection block and change in resistance value of the detection block. A support;
A conductive portion formed on one main surface of the support and electrically connected to the + side electrode and the − side electrode;
The conductive portion has a detection block of a predetermined shape formed over a first connection portion with the + side electrode and a second connection portion with the-side electrode,
The detection block can detect an electrical change in the detection block due to an attack from the outside,
The conductive film is characterized in that the longest side of the detection block is 20 mm or less.

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