JP5385192B2 - Pattern generation method and pattern generation program - Google Patents

Description

  The present invention relates to a pattern generation method and a pattern generation program, and more particularly to a pattern generation method and a pattern generation program suitable for generating a wiring pattern of a conductive film.

  2. Description of the Related Art Conventionally, for example, a window described in Patent Document 1 has been proposed as a window for a passenger moving body that is suitable for use in a window that requires visibility and electromagnetic wave shielding. This window is provided with a mesh layer, and the mesh layer is formed by repeatedly arranging arc-shaped conductive wires cut out of a circle in a lattice shape, and ends of the arc-shaped wire rods. The wiring pattern has a shape connected to the vicinity of the center of the adjacent arc-shaped wire. That is, the mesh layer described in Patent Document 1 is formed with a wiring pattern having regularity.

  In addition, as a wiring pattern formed on a conductive film, a pattern having a component in a one-dimensional direction in which a wire is formed along one direction (see Patent Document 2), a wire in one direction, and another direction (one direction) And an irregular pattern having a component in a two-dimensional direction (see Patent Document 3).

JP 2009-137455 A Korean Published Patent No. 10-2009-0113757 Korean Published Patent No. 10-2009-0113758

  By the way, when a wiring pattern is installed on, for example, a window glass of a vehicle, it is necessary to pay attention to at least three points of spread of a diffraction image, disconnection, and wiring visibility.

  That is, when a wiring pattern is installed on a window glass of a vehicle, for example, a light diffraction image having a component in a two-dimensional direction is two-dimensionally spread (diffractive image spread). In a pattern having a component in a one-dimensional direction, when installed as a heating element on a window glass of a vehicle, there is an influence of deterioration of in-plane heat generation unevenness due to disconnection (disconnection). In a pattern having a component in a two-dimensional direction, there is a problem that the irregularity of the wiring becomes strong and the wiring pattern is easily visually recognized, that is, the wiring visibility is remarkably deteriorated (wiring visibility).

  Since Patent Document 1 described above is a wiring pattern having regularity having components in a two-dimensional direction, when applied to a window glass of a vehicle, the spread of a diffraction image due to the light source and the wiring pattern becomes a problem. There is also a problem that the generation of interference fringes due to a regular pattern is remarkable.

  Since Patent Document 2 is a wiring pattern having a component in a one-dimensional direction, when applied as a heating element installed on a vehicle window glass, it cannot be said that non-uniformity in the amount of heat generated due to wire breakage cannot be avoided. There's a problem.

  Since Patent Document 3 is an irregular wiring pattern having a component in a two-dimensional direction, there is a problem that the wiring pattern is noticeable and wiring visibility is deteriorated.

  The present invention has been made in consideration of such problems, and can solve the problems of spreading of a diffraction image, disconnection, and wiring visibility, and generates heat when used as a heat generating sheet by passing an electric current. In addition to improving efficiency, it is possible to prevent glare from light caused by vehicle lamps, outdoor lights, etc., and to generate a wiring pattern of a conductive film suitable for use in a vehicle window glass or the like. An object is to provide a pattern generation method and a pattern generation program.

  Another object of the present invention is to generate a conductive film wiring pattern capable of preventing glare caused by a backlight when used as an electrode for a touch panel, an inorganic EL element or an organic EL element. An object of the present invention is to provide a pattern generation method and a pattern generation program.

  Another object of the present invention is to provide a conductive film that functions as an electromagnetic wave shielding film when used as an electrode of a solar cell, and that can maintain a low surface resistance to prevent a decrease in power generation efficiency. An object of the present invention is to provide a pattern generation method and a pattern generation program capable of generating a wiring pattern.

[1] In the pattern generation method according to the first aspect of the present invention, pattern generation is performed by using a computer to generate a wiring pattern constituting a conductive portion in a conductive film having a conductive portion and an opening on a transparent film substrate. In the method, the conductive portion electrically connects a main line pattern in which a plurality of wave lines formed along a first direction are arranged in a second direction orthogonal to the first direction and an adjacent wave line. A plurality of sub-lines connected together, a step of inputting an initial function, a first step of generating a wave line pattern in a first direction while randomly changing at least the period of the initial function, and drawing A second step of randomly changing a distance in a second direction (a direction orthogonal to the first direction) between the wave line and the wave line adjacent to the wave line; the first step and the second step; And a third step of generating the main line pattern in which a plurality of wave lines formed along the first direction are arranged in the second direction orthogonal to the first direction; And defining a pattern between two or more sub-lines connecting adjacent wave lines between each line in the main line pattern, when the adjacent wave lines are defined as rows.

  As a result, the wiring pattern generated by the pattern generation method of the present invention is a wiring pattern having a component in the two-dimensional direction, but the wave line having the component in the one-dimensional direction has irregularity, so that the diffraction image Can be suppressed to a one-dimensional spread, and interference fringes can also be blurred. In addition, since a plurality of sub-lines are electrically connected between adjacent wave lines, the influence of uneven heat generation can be suppressed even if a disconnection occurs in part. In addition, since it is the wave line formed along the first direction that has irregularity, the wiring pattern does not stand out, and the wiring visibility can be improved.

  That is, the wiring pattern generated in the present invention can solve the problems of spreading of the diffraction image, disconnection, and wiring visibility. As a result, when it is used as a heat generating sheet by passing an electric current, it is possible to improve the heat generation efficiency, and to prevent glare of light by a vehicle lamp or an outside light, etc. Suitable for use. The number of window glass replacements due to disconnection can also be reduced, which can contribute to a reduction in the user's running cost.

  Moreover, when the wiring pattern generated in the present invention is used as an electrode for a touch panel, an inorganic EL element, or an organic EL element, glare caused by a backlight can be prevented.

  In addition, the wiring pattern generated in the present invention functions as an electromagnetic wave shielding film when used as an electrode of a solar cell, and can keep the surface resistance low to prevent a decrease in power generation efficiency. .

[2] In the first aspect of the present invention, the third step draws the main line pattern in the image memory by drawing the wave line pattern in the image memory of the computer. In the fourth step, the sub-line pattern is drawn in the image memory, and the wiring pattern is drawn in the image memory.

[3] In the first aspect of the present invention, the initial function is a sine wave function, and the first step randomly changes the half-cycle wave line of the sine wave at least every half cycle of the sine wave. And generating the wave line pattern.

[4] In the first aspect of the present invention, the first step generates a wave line having a half cycle of the sine wave while randomly changing at least a cycle and an amplitude of the sine wave every half cycle. A road pattern is generated.

[5] In the first aspect of the present invention, the first step generates a wavy line of the half cycle of the sine wave while changing at least the period, amplitude and phase of the sine wave at random every half cycle, The wave line pattern is generated.

[6] In the first aspect of the present invention, the first step generates a half-cycle wave line of the sine wave while randomly changing the period, amplitude, phase and line width every half cycle. A road pattern is generated.

[7] In the first aspect of the present invention, in the second step, the maximum value of the amplitude of the wave line in one wave line is 1 / of the interval between the wave line adjacent to the one wave line. The interval is set to be limited to 2 or less.

[8] In the first aspect of the present invention, the fourth step generates a linear pattern of the sub-line along the second direction.

[9] In the first aspect of the present invention, the fourth step generates the sub-line pattern while randomly changing the position of the sub-line for each row.

[10] In the first aspect of the present invention, the wiring pattern has a quadrangular shape of a closed section surrounded by each center line of adjacent wave lines and each center line of adjacent sub-lines between the adjacent wave lines. And a plurality of the closed compartments are arranged.

[11] In the first aspect of the present invention, the closed sections have substantially the same area.

[12] In the first aspect of the present invention, the length of the circumference of each closed section is substantially the same.

[13] In the first aspect of the present invention, the length of the first side by the center line of the wave line constituting the closed section is L1, and the length of the second side by the center line of the sub-line constituting the closed section is When L2 is set, the ratio (L1 / L2) between the length L1 of the first side and the length L2 of the second side is 5 or more.

[14] A pattern generation program according to the second aspect of the present invention is a pattern generation program for generating a wiring pattern constituting a conductive portion in a conductive film having a conductive portion and an opening on a transparent film substrate, The conductive portion electrically connects a main line pattern in which a plurality of wave lines formed along a first direction are arranged in a second direction orthogonal to the first direction and adjacent wave lines. A step of inputting an initial function to a computer, a first step of generating a wave line pattern in a first direction while randomly changing at least the period of the initial function, A second step of randomly changing an interval between the wave line and a wave line adjacent to the wave line in a second direction (a direction orthogonal to the first direction), the first step, and the second step; And generating a main line pattern in which a plurality of wave lines formed along the first direction are arranged in the second direction orthogonal to the first direction, A pattern generation program for executing a fourth step of generating a pattern of two or more sub-lines connecting adjacent wave lines between each row in the main line pattern when the adjacent wave lines are defined as rows. is there.

  As described above, according to the pattern generation method and the pattern generation program according to the present invention, the following effects can be obtained.

(1) Problems of spreading of diffraction images, disconnection, and wiring visibility can be solved. As a result, when it is used as a heat generating sheet by passing an electric current, it is possible to improve the heat generation efficiency, and to prevent glare of light by a vehicle lamp or an outside light, etc. A conductive film that is suitable for use can be obtained.

(2) When used as an electrode for a touch panel, an inorganic EL element, or an organic EL element, a conductive film capable of preventing glare caused by a backlight can be obtained.

(3) When used as an electrode of a solar cell, it is possible to obtain a conductive film that functions as an electromagnetic wave shielding film and that can maintain a low surface resistance and prevent a decrease in power generation efficiency.

It is sectional drawing which abbreviate | omits and shows the electroconductive film which concerns on this Embodiment. It is a top view which abbreviate | omits and shows the electroconductive film which concerns on this Embodiment. It is a flowchart which shows the manufacturing method of the electroconductive film which concerns on this Embodiment. It is a flowchart (the 1) which shows the method of producing | generating the exposure pattern for producing an electroconductive film. It is a flowchart (the 2) which shows the method of producing | generating the exposure pattern for producing an electroconductive film. It is a flowchart (the 3) which shows the method of producing | generating the exposure pattern for producing an electroconductive film. 7A to 7E are process diagrams showing a first manufacturing method of the conductive film according to the present embodiment. 8A and 8B are process diagrams showing a second manufacturing method of the conductive film according to the present embodiment. 9A and 9B are process diagrams showing a third manufacturing method of the conductive film according to the present embodiment. It is process drawing which shows the 4th manufacturing method of the electroconductive film which concerns on this Embodiment. It is a graph which shows the sensory evaluation of the diffraction image and wiring visibility by the difference (L1 / L2) ratio of the length L1 of the 1st edge | side of a closed block, and the length L2 of a 2nd edge | side.

  Embodiments of a pattern generation method and a pattern generation program according to the present invention will be described below with reference to FIGS. In the present specification, “to” is used as a meaning including numerical values described before and after the lower limit value and the upper limit value.

  First, before describing the pattern generation method and the pattern generation program according to the present embodiment, the conductive film and the manufacturing method manufactured based on the pattern generation method and the wiring pattern generated by the pattern generation program will be described with reference to FIG. Description will be given with reference to FIG.

  The produced conductive film 10 can be used as a part of a vehicle defroster (a defroster), a window glass, or the like. This conductive film also functions as a transparent heating element that generates heat when an electric current is applied.

  And this electroconductive film 10 has the electroconductive part 14 and the opening part 16 on the transparent film base material 12, as shown in FIG. In the following description, the conductive portion 14 may be referred to as a wiring pattern 14.

  As shown in an enlarged view in FIG. 2, the conductive portion 14 includes a plurality of wave lines 20 formed along the first direction (X direction) arranged in a second direction (Y direction) orthogonal to the first direction. The main line pattern 22 thus formed and a plurality of sub-lines 24 that electrically connect adjacent wave lines 20 are provided. A portion defined by the wave line 20 and the sub line 24 constitutes the opening 16.

  The plurality of wave lines 20a constituting each wave line 20 in the main line pattern 22 have at least irregular cycles. The example of FIG. 2 shows an example in which the period, the amplitude, and the interval between adjacent wave lines are irregular.

  Moreover, in this Embodiment, the irregularity is provided for each of the several wave line 20a which comprises each wave line 20 for every half cycle. That is, the wavy lines have different periods and amplitudes every half period. Here, the maximum value of the amplitude of the wave line 20 a in one wave line 20 is set to ½ or less of the interval between the wave line 20 adjacent to the one wave line 20. This is to prevent the wave line 20a from overlapping between adjacent wave lines 20.

  The phase of each wave line 20 is also set irregularly. In the example of FIG. 2, the first, third, and fourth wave lines 20 from the top start at a phase of 0 °, and the second and fifth wave lines 20 from the top start at a phase of 180 °. An example is shown.

  Further, although not shown in the present embodiment, the line width of each wavy line 20a is also irregular and is set to a different line width every half cycle.

  On the other hand, the sub line 24 is formed linearly along the second direction. In consideration of wiring visibility, it is preferable that the number of sub-lines 24 wired between a pair of adjacent wave lines 20 is as small as possible. In this embodiment, the number is set to 2 to 3.

  Further, the main line pattern 22 has a quadrangular shape of the closed section 26 surrounded by the center lines Lm of the adjacent wave lines 20 and the center lines Ln of the adjacent sub lines 24 between the adjacent wave lines 20. There is a form in which a large number of the closed compartments 26 are arranged. In the example of FIG. 2, an example is shown in which the area of each closed compartment 26 is substantially the same, and the length of the circumference of each closed compartment 26 is substantially the same. Here, “substantially the same” is considered in consideration of manufacturing variations. Ideally, the area of each closed section 26 is the same, and the length of the circumference of each closed section 26 is the same. It is desirable that they are the same.

  Further, when the length of the first side by the center line Lm of the wave line 20 is L1, and the length of the second side by the center line Ln of the sub-line 24 constituting the closed section 26 is L2, the length of the first side The ratio (L1 / L2) between the length L1 and the length L2 of the second side is preferably 5 or more.

  Further, the line width of the wave line 20 and the line width of the sub line 24 may be different. If the line width of the wave line 20 is made larger than the line width of the sub-line 24, the sub-line 24 becomes inconspicuous, which is preferable for improving wiring visibility and for reducing the surface resistance. On the contrary, if the line width of the sub-line 24 is made thicker than the line width of the wave line 20, it is preferable to reduce the influence of the amount of heat generated by the disconnection of the wave line 20 in the case of a transparent heating element. Of course, by narrowing the interval between adjacent wave lines 20, the influence of disconnection can be reduced.

  However, when the line width of the wave line 20 or the sub line 24 is increased, or when the interval between the adjacent wave lines 20 is reduced, the visible light transmittance is lowered, so that the visible light transmittance is maintained at 70 to 80%. It is preferable to adjust to the extent possible. In this case, the line width of the wave line 20 and the line width of the sub-line 24 are preferably 100 μm or less, and the interval between adjacent wave lines 20 is preferably 1000 μm or less.

  Thus, in the conductive film 10 and the transparent conductor according to the present embodiment, although the wiring pattern 14 has components in the first direction and the second direction, the wave line 20 having components in the first direction is Due to the irregularity, the spread of the diffraction image can be suppressed to a one-dimensional spread, and the interference fringes can be made unclear. In addition, since the plurality of sub-lines 24 are electrically connected between the adjacent wave lines 20, even if a disconnection occurs in part, it is possible to suppress the influence of uneven heat generation. In addition, since it is the wave line 20 formed along the first direction that has irregularity, the wiring pattern 14 is not conspicuous, and the wiring visibility can be improved.

  That is, in this embodiment, the problem of spreading of the diffraction image, disconnection, and wiring visibility can be solved. As a result, when it is used as a transparent heating element by passing an electric current, it is possible to improve the heat generation efficiency and to prevent glare caused by vehicle lamps, outdoor lights, etc. It is suitable for use. The number of window glass replacements due to disconnection can also be reduced, which can contribute to a reduction in the user's running cost.

  Further, in this embodiment, when used as an electrode for a touch panel, an inorganic EL element, or an organic EL element, glare or the like due to a backlight can be prevented.

  Moreover, in this Embodiment, when it uses as an electrode of a solar cell, it functions as an electromagnetic wave shielding film, Furthermore, surface resistance can be kept low and the fall of electric power generation efficiency can be prevented.

  Next, the manufacturing method including the manufacturing method of the electroconductive film 10 and the pattern generation method according to the present embodiment will be described with reference to FIGS.

  First, in step S1 of FIG. 3, a photosensitive material is prepared. As the photosensitive material, as will be described later, a photosensitive material having a transparent film substrate 12 and a silver salt photosensitive layer provided on the transparent film substrate 12, or a transparent film group having a copper foil formed on the upper surface thereof. Examples thereof include a photosensitive material having a material 12 and a photoresist film formed on a copper foil.

  In step S2, an exposure pattern (wiring pattern of the conductive portion 14: drawing data) is generated by the pattern generation device.

  In step S3, a mask having a mask pattern corresponding to the generated exposure pattern is prepared, and the photosensitive material (silver salt photosensitive layer or photoresist layer) is irradiated with light from the exposure apparatus through the mask pattern. The material is exposed to the exposure pattern. Alternatively, the generated exposure pattern is input to an exposure apparatus, and the exposure pattern is exposed on the photosensitive material by digital writing exposure of the exposure apparatus. When the photosensitive material has a silver salt photosensitive layer or a negative type photoresist layer, the portion facing the exposure pattern is exposed, and when the photosensitive material has a positive type photoresist layer, it does not face the exposure pattern. The part (that is, the reverse pattern) is exposed.

  In step S4, the photosensitive material is developed to form a conductive portion 14 having a pattern along the exposure pattern on the transparent film substrate 12. At this stage, the conductive film 10 is completed.

  Thereafter, in step S5, for example, the conductive film 10 is installed as a transparent heating element between two laminated glasses constituting the windshield.

  Here, a pattern generation method and an exposure pattern generation method using a pattern generation program according to the present embodiment will be described with reference to FIGS. A pattern generation apparatus to which the pattern generation method and the pattern generation program are applied is configured by a computer and includes an input device such as a keyboard and a mouse, a hard disk, a pseudo random number generator, an image memory in which an exposure pattern is drawn, various registers, an input It has an output interface.

  First, in step S101 of FIG. 4, a reference initial function is input to the pattern generation apparatus. This may be an operation input from an input device by an operator, or an initial function stored in advance in a hard disk, for example, may be read when a pattern generation program is started.

  In step S102, initial setting is performed. The initial setting is the initial setting of the drawing start position (address) for the image memory, the number Na of the half-cycle wave lines 20a included in one wave line 20, the number Nb of the wave lines 20, and a pair of adjacent wave lines 20 Examples include setting the number Nc of sub-lines 24 wired between them, the area of the closed section 26 (or the length of the entire circumference of the closed section 26), and various irregular parameters.

  The irregularity parameter indicates a fluctuation range such as the period of the wavy line 20a. For example, if the initial function is a sine wave function, the fluctuation range of the sine wave period, the fluctuation range of the amplitude of the sine wave, the line width The fluctuation width, the fluctuation width of the interval between the adjacent wave lines 20, and the fluctuation width of the drawing position of each first sub-line are defined by the maximum allowable percentage.

  In step S103, an initial value “1” is set to a counter i used for counting the number of wave lines 20 generated.

  In step S104, an initial value “1” is set to the counter j used for counting the number of the generated half-cycle wave lines 20a.

  In step S105, the cycle of the j-th half-cycle wave line 20a in the i-th wave line 20 is set. At this time, random number generation is performed twice.

  The first time is a random number that sets the direction of change (positive or negative), and is any one of 0 to 100 that is randomly generated. If this random number is between 0 and 50, it is set to “negative”, and if the random number is between 51 and 100, it is set to “positive”.

  The second time is a random number that sets the fluctuation range. For example, when the half cycle of the reference sine wave function is set to 1.35 mm and the fluctuation range is set to 50% in the initial setting described above, the half cycle of the wavy line 20a is the first random number when n is the second random number. Is 1.35 × (1−0.5 × (n / 100)) mm. When the first random number is positive, it is 1.35 × (1 + 0.5 × (n / 100)) mm. Therefore, in step S105, the half cycle of the wavy line 20a is set to any number from 0.675 to 2.025 mm.

  In step S106, the amplitude of the half-cycle wave line 20a is set. In this case also, random number generation is performed twice. The first time is a random number for setting the direction of change (positive or negative) as in step S105.

  The second time is a random number that sets the amplitude fluctuation range. For example, when the amplitude of the reference sine wave function is set to 0.5 mm and the fluctuation range is set to 30% in the initial setting described above, the amplitude of the half-cycle wave line 20a is the first time when the second random number is n. If the random number is negative, it is 0.5 × (1−0.3 × (n / 100)) mm. When the first random number is positive, it is 0.5 × (1 + 0.3 × (n / 100)) mm. Therefore, in step S106, the amplitude of the half-cycle wave line 20a is set to any number from 0.35 to 0.65 mm.

  In step S107, the line width of the half-cycle wave line 20a is set. In this case also, random number generation is performed twice. The first time is a random number for setting the direction of change (positive or negative) as in step S105.

  The second time is a random number that sets the fluctuation range of the line width. For example, when the line width of the reference sine wave function is set to 20 μm and the fluctuation width is set to 20% in the initial setting described above, the amplitude of the half-cycle wave line 20a is the first random number when n is the second random number. Is negative, it is 20 × (1−0.2 × (n / 100)) μm. When the first random number is positive, it is 20 × (1 + 0.2 × (n / 100)) μm. Accordingly, in step S107, the line width of the half-cycle wave line 20a is set to any number of 16 to 24 μm.

  In step S108, the phase of the half-line wave line 20a is set. At this time, one random number generation is performed. Similarly to the above, this random number is any one of 0 to 100 randomly generated. If the random number is 0 to 50, the phase is set to 0 °, and the random number is 51 to 51. If it is 100, the phase is set to 180 °.

  In step S109, the half-cycle wave line 20a after setting (the j-th half-cycle wave line 20a in the i-th wave line 20) is drawn from the set drawing start position in the image memory. In the description of the setting of the various parameters described above, actual values are shown so that an actual exposure pattern can be grasped. However, in the drawing on the image memory, the actual values are affine transformed into screen coordinates. The same applies hereinafter. When the exposure pattern is sent to the exposure apparatus, the pattern drawn in the image memory is converted into a size based on the actual measurement value and supplied to the exposure apparatus. Alternatively, after the pattern drawn in the image memory is supplied to the exposure apparatus, the exposure apparatus converts the pattern into a size based on the actual measurement value.

  In step S110, the value of the counter j is updated by +1.

  In step S111, for the i-th wave line 20, it is determined whether drawing of all half-cycle wave lines 20a is completed. This determination is made based on whether or not the value of the counter j exceeds the number Na of the wave lines 20a having a half cycle. If not completed, the process proceeds to step S112, and the drawing start position is set (updated) to a position moved in the first direction (X direction) by the period of the half-line wave line 20a drawn in step S109. Thereafter, the process returns to step S105, and the processing after step S105, that is, the setting and drawing of the wavy line 20a of the next half cycle are performed.

  When drawing of all the half-cycle wave lines 20a for the i-th wave line 20 is completed, the process proceeds to step S113 in FIG. 5, and the value of the counter i is updated by +1.

  In step S114, for the i-th wave line 20, it is determined whether drawing of all half-cycle wave lines 20a is completed. This determination is made based on whether the value of the counter i exceeds the number Nb of wave lines. If not completed, the process proceeds to step S115 to set an interval between adjacent wave lines. In this case also, random number generation is performed twice. The first time is a random number for setting the direction of change (positive or negative) as in step S105.

  The second time is a random number that sets the fluctuation range of the interval between the wave lines 20. For example, when the reference value of the interval between the wave lines 20 is set to 2.7 mm and the fluctuation range is set to 10% in the initial setting described above, the interval between the wave lines 20 is the first time when the second random number is n. If the random number is negative, it is 2.7 × (1-0.1 × (n / 100)) mm. When the first random number is positive, it is 2.7 × (1 + 0.1 × (n / 100)) mm. Therefore, in this step S115, the interval between the wave lines 20 is set to any number from 2.43 to 2.97 mm.

  In step S116, information on the interval between the wave lines 20 set in step S115 is stored in the i-th record of the line spacing table.

  In step S117, the drawing start position is set to a position moved in the second direction (Y direction) by the interval of the wave line 20 set in step S115 from the head position of the i-th wave line. Thereafter, the process returns to step S104 in FIG. 4, and the processing after step S104, that is, the setting and drawing of the next wave line 20 are performed.

  When drawing of all the wave lines 20 is completed, the process proceeds to step S118 in FIG. 5, and when the interval between adjacent wave lines 20 is defined as a line interval, the counter k used for counting the number of line intervals of the generated wave line 20 is initialized. Set the value “1”.

  In step S119, a drawing start position (coordinates in the first direction) of the first sub-line 24 drawn between the kth rows is set. At this time, one random number generation is performed. For example, when the half cycle of the reference sine wave function is 1.35 mm, the number of wavy lines Nb is 120, the fluctuation range is set to 20%, and the random number is n, the first sub-line The drawing start position 24 is 1.35 × 120 × 0.2 × (n / 100) mm from the origin in the first direction (the drawing start position in the first direction of each wave line 20).

  In step S120, the position of the intersection (two intersections lined up in the second direction) between the adjacent wave line 20 constituting the k-th row and the line extending from the drawing start position set in step S119 is obtained.

  In step S121, the sub line 24 is drawn between the intersections obtained in step S121.

  In step S122, an initial value “1” is set to a counter p used for counting the number of second and subsequent sub-lines 24 drawn between one row.

  In step S123, information on an interval corresponding to the k-th row among the intervals between adjacent wavy lines registered in the row spacing table is read.

  In step S124, the distance (L1) between the adjacent sub-lines 24 is obtained based on the read interval information and the preset area of the closed section 26 (or the length of the entire circumference of the closed section 26).

  In step S125, a position obtained by adding the distance between the sub-lines 24 obtained in step S123 to the current drawing start position is set (updated) as the drawing start position.

  In step S126, the position of the intersection (two intersections lined up in the second direction) between the adjacent wave line 20 forming the k-th row and the line obtained by extending the drawing start position set in step S125 is obtained.

  In step S127, the sub line 24 is drawn between the intersections obtained in step S126.

  In step S128 of FIG. 6, the counter p is updated by +1.

  In step S129, it is determined whether drawing of the second and subsequent sub-lines has been completed. This determination is made based on whether or not the value of the counter p exceeds the number (Nb−1) obtained by subtracting 1 from the number Nc of the sub-lines 24. If not completed, the process returns to step S123 in FIG. 5, and the processing after step S123, that is, the setting and drawing of the next sub-line 24 are performed.

  At the stage where drawing of all the sub-lines 24 is completed for the k-th line interval, the process proceeds to step S130 in FIG. 6 and the value of the counter k is updated by +1.

  In step S131, it is determined whether or not drawing of the sub-line 24 between all rows has been completed. This determination is made based on whether or not the value of the counter k exceeds the total number of rows (number of wave lines 20 Nb−1). If not completed, the process returns to step S119 in FIG. 5, and the processing after step S119, that is, setting and drawing of the sub-line 24 between the next rows is performed.

  When drawing of the sub-line 24 between all rows is completed, the process proceeds to the next step S131, and a pattern (exposure pattern) drawn in the image memory is output to the exposure apparatus. At this stage, the pattern generation process ends.

  Next, a specific method for manufacturing the conductive film 10 based on the above-described process of FIG. 3 will be described with reference to FIGS. 7A to 10.

  The first production method comprises exposing a silver salt photosensitive layer provided on the transparent film substrate 12 to light, developing and fixing, and a conductive metal carried on the metal silver portion. The conductive part 14 (wiring pattern) is formed by.

  Specifically, as shown in FIG. 7A, a silver salt photosensitive layer 40 obtained by mixing silver halide 36 (for example, silver bromide grains, silver chlorobromide grains or silver iodobromide grains) with gelatin 38 is formed as a transparent film. A photosensitive material is obtained by coating on the substrate 12. 7A to 7C, although the silver halide 36 is described as “grains”, it is exaggerated to help the understanding of the present invention, and the size, concentration, etc. are shown. It is not a thing.

  Thereafter, as shown in FIG. 7B, the silver salt photosensitive layer 40 is subjected to exposure necessary for forming the conductive portion 14. That is, the silver salt photosensitive layer 40 is irradiated with light through a mask pattern corresponding to the exposure pattern obtained through the pattern generation processing shown in FIGS. Or the exposure pattern produced | generated by the said pattern production | generation process is exposed to the silver salt photosensitive layer 40 by the digital writing exposure with respect to the silver salt photosensitive layer 40. FIG. When silver halide 36 receives light energy, it is exposed to light and generates minute silver nuclei called “latent images” that cannot be observed with the naked eye.

  Thereafter, development processing is performed as shown in FIG. 7C in order to amplify the latent image into a visualized image that can be observed with the naked eye. Specifically, the silver salt photosensitive layer 40 on which the latent image is formed is developed with a developer (both alkaline solutions and acidic solutions, but usually alkaline solutions are large). In this development process, silver ions supplied from silver halide grains or a developer are reduced to metallic silver by using a latent image silver nucleus as a catalyst nucleus by a reducing agent called a developing agent in the developer, and as a result The image silver nuclei are amplified to form a visualized silver image (developed silver 42).

  After the development processing is completed, silver halide 36 that can be exposed to light remains in the silver salt photosensitive layer 40. To remove this, a fixing processing solution (either an acidic solution or an alkaline solution is used as shown in FIG. 7D). However, fixing is usually performed by using an acidic solution.

  By performing this fixing process, the metal silver portion 44 is formed in the exposed portion, and only the gelatin 38 remains in the non-exposed portion to become the light transmissive portion 46. That is, a combination of the metallic silver portion 44 and the light transmissive portion 46 is formed on the transparent film substrate 12.

  The reaction formula of the fixing process when silver bromide is used as the silver halide 36 and the fixing process is performed with thiosulfate is as follows.

AgBr (solid) + 2 S ₂ O ₃ ions → Ag (S ₂ O ₃ ) ₂
(Easily water-soluble complex)
That is, two thiosulfate ions S ₂ O ₃ and silver ions in gelatin 38 (silver ions from AgBr) form a silver thiosulfate complex. Since the silver thiosulfate complex is highly water-soluble, it is eluted from the gelatin 38. As a result, the developed silver 42 is fixed and remains as the metallic silver portion 44.

  Therefore, the development step is a step of causing the developing agent to react with the latent image to precipitate the developed silver 42, and the fixing step is a step of eluting the silver halide 36 that has not become the developed silver 42 into water. For details, see T.W. H. James, The Theory of the Photographic Process, 4th ed. , Macmillan Publishing Co. , Inc, NY, Chapter 15, pp. 438-442. See 1977.

  In many cases, the development process is performed with an alkaline solution. Therefore, when entering the fixing process from the development process, the alkaline solution adhered in the development process is a fixing process solution (in many cases, an acidic solution). Therefore, there is a problem that the activity of the fixing processing solution changes. In addition, there is a concern that an unintended development reaction further proceeds due to the developer remaining in the film after leaving the development processing tank. Therefore, it is preferable to neutralize or acidify the silver salt photosensitive layer 40 with a stop solution such as an acetic acid (vinegar) solution after the development processing and before entering the fixing processing step.

  Then, as shown in FIG. 7E, for example, a plating process (single or combined electroless plating or electroplating) is performed, and the conductive metal 48 is supported only on the metal silver portion 44, whereby the transparent film substrate 12 is formed. The conductive portion 14 is formed by the metallic silver portion 44 and the conductive metal 48 supported on the metallic silver portion 44, and the light transmitting portion 46 becomes the opening 16. That is, on the transparent film substrate 12, as shown in FIG. 2, a plurality of wave lines 20 formed along the first direction (X direction) are in the second direction (Y direction) perpendicular to the first direction. A conductive portion 14 having a main line pattern 22 arranged in a line and a plurality of sub-lines 24 that electrically connect adjacent wave lines 20 is formed.

  Here, the difference between the above-described method using the silver salt photosensitive layer 40 (silver salt photographic technology) and the method using photoresist (resist technology) will be described.

  In resist technology, the photopolymerization initiator absorbs light by the exposure process and the reaction starts, and the photoresist film (resin) itself undergoes a polymerization reaction to increase or decrease the solubility in the developer. The exposed resin is removed. Note that a solution called a developing solution in the resist technique is an alkaline solution that does not contain a reducing agent and dissolves an unreacted resin component, for example. On the other hand, in the exposure processing of the silver salt photographic technique of the present invention, as described above, minute silver nuclei called “latent images” are formed from the photoelectrons and silver ions generated in the silver halide 36 at the site receiving light. The latent image silver nuclei are amplified by a development process (in this case, the developer always contains a reducing agent called a developing agent) to become a visualized silver image. Thus, the resist technology and the silver salt photographic technology have completely different reactions from exposure processing to development processing.

  In the development process of the resist technique, a resin part that has not undergone a polymerization reaction in an exposed part or an unexposed part is removed. On the other hand, in the development processing of the silver salt photographic technology, the developed silver 42 grows to a visible size by causing a reduction reaction with a reducing agent called a developing agent contained in the developer using the latent image as a catalyst nucleus. The gelatin 38 in the unexposed portion is not removed. In this way, the resist technology and the silver salt photographic technology have completely different reactions in development processing.

  Note that the silver halide 36 contained in the unexposed gelatin 38 is eluted by the subsequent fixing process, and the gelatin 38 itself is not removed.

  Thus, in silver salt photographic technology, the main reaction (photosensitive) is silver halide, whereas in resist technology, it is a photopolymerization initiator. In the development processing, the binder (gelatin 38) remains in the silver salt photographic technique, but the binder disappears in the resist technique. In this respect, the silver salt photographic technique and the photoresist technique are greatly different.

  As another manufacturing method (second manufacturing method), as shown in FIG. 8A, for example, a photoresist film 52 on a copper foil 50 formed on a transparent film substrate 12 is formed to obtain a photosensitive material. Thereafter, the photosensitive material is exposed. That is, the photoresist film 52 is irradiated with light through a mask pattern corresponding to the exposure pattern obtained through the pattern generation processing shown in FIGS. Alternatively, the exposure pattern generated by the pattern generation apparatus is exposed to the photoresist film 52 by digital writing exposure on the photoresist film 52. Thereafter, by developing, a resist pattern 54 corresponding to the conductive portion 14 is formed on the transparent film substrate 12, and the copper foil 50 exposed from the resist pattern 54 is etched as shown in FIG. 8B. At this stage, the conductive portion 14 made of copper foil is formed. That is, on the transparent film substrate 12, as shown in FIG. 2, a plurality of wave lines 20 formed along the first direction (X direction) are in the second direction (Y direction) perpendicular to the first direction. A conductive portion 14 having a main line pattern 22 arranged in a line and a plurality of sub-lines 24 that electrically connect adjacent wave lines 20 is formed.

  As a third manufacturing method, as shown in FIG. 9A, a paste 56 containing fine metal particles is printed on the transparent film substrate 12, and as shown in FIG. 9B, a metal plating 58 is applied to the paste 56. Thus, the conductive portion 14 may be formed.

  Alternatively, as a fourth manufacturing method, as shown in FIG. 10, a wiring pattern 14 corresponding to the exposure pattern obtained through the pattern generation processing shown in FIGS. Or you may make it print-form with a gravure printing plate.

  Next, in the conductive film 10 according to the present embodiment, a method for producing a conductive metal thin film using a silver halide photographic light-sensitive material which is a particularly preferable embodiment will be mainly described.

  As described above, the conductive film 10 according to the present embodiment is exposed by exposing a photosensitive material having an emulsion layer containing a photosensitive silver halide salt on the transparent film substrate 12 and developing the photosensitive material. A metallic silver portion 44 and a light-transmitting portion 46 are formed on the exposed portion and the unexposed portion, respectively, and the metallic silver portion 44 is subjected to physical development and / or plating treatment to carry the conductive metal 48 on the metallic silver portion 44. Can be manufactured.

  The method for forming the conductive film 10 according to the present embodiment includes the following three forms depending on the photosensitive material and the form of development processing.

(1) An embodiment in which a photosensitive silver halide black-and-white photosensitive material that does not contain physical development nuclei is chemically developed or thermally developed to form a metallic silver portion 44 on the photosensitive material.

(2) An embodiment in which a photosensitive silver halide black and white photosensitive material containing physical development nuclei in a silver halide emulsion layer is dissolved and physically developed to form a metallic silver portion 44 on the photosensitive material.

(3) A photosensitive silver halide black-and-white photosensitive material that does not contain physical development nuclei and an image-receiving sheet having a non-photosensitive layer that contains physical development nuclei are overlaid and diffusion-transfer developed to form a non-photosensitive image of the metallic silver portion Form formed on a sheet.

  The aspect (1) is an integrated black-and-white development type, and a light-transmitting conductive film such as an electromagnetic wave shielding film or a light-transmitting conductive film is formed on the photosensitive material. The resulting developed silver is chemically developed silver or heat developed silver, and is highly active in the subsequent plating or physical development process in that it is a filament with a high specific surface.

  In the above aspect (2), in the exposed portion, the silver halide grains close to the physical development nucleus are dissolved and deposited on the development nucleus, whereby a light-transmitting electromagnetic wave shielding film or light-transmitting conductive material is formed on the photosensitive material. A translucent conductive film such as a film is formed. This is also an integrated black-and-white development type. Although the developing action is precipitation on physical development nuclei, it is highly active, but developed silver has a spherical shape with a small specific surface.

  In the above aspect (3), the silver halide grains are dissolved and diffused in the unexposed area and deposited on the development nuclei on the image receiving sheet, whereby an electromagnetic wave shielding film, a light transmissive conductive film, etc. The translucent conductive film is formed. This is a so-called separate type in which the image receiving sheet is peeled off from the photosensitive material.

  In either embodiment, either negative development processing or reversal development processing can be selected (in the case of the diffusion transfer method, negative development processing is possible by using an auto-positive type photosensitive material as the photosensitive material). .

  The chemical development, thermal development, dissolution physical development, and diffusion transfer development mentioned here have the same meanings as are commonly used in the industry, and are general textbooks of photographic chemistry such as Shinichi Kikuchi, “Photochemistry” (Kyoritsu Publishing) (Published in 1955), C.I. E. K. It is described in "The Theory of Photographic Processes, 4th ed." Edited by Mees (Mcmillan, 1977). Although this case is an invention related to liquid processing, a technique of applying a thermal development system as another development system can also be referred to. For example, the techniques described in Japanese Patent Application Laid-Open Nos. 2004-184893, 2004-334077, and 2005-010752, and Japanese Patent Application Nos. 2004-244080 and 2004-085655 can be applied. it can.

(Photosensitive material)
The photosensitive material (photosensitive web) as the material to be plated is, for example, a long flexible base material in which a silver salt-containing layer containing a silver salt (for example, silver halide) is provided on the transparent film base material 12. Further, a protective layer may be provided on the silver salt-containing layer, and this protective layer means a layer made of a binder such as gelatin or a high molecular polymer, and exhibits an effect of preventing scratches and improving mechanical properties. In order to do so, it is formed on the silver salt-containing layer. The thickness of the protective layer is preferably 0.02 to 20 μm.

  The composition of these silver salt-containing layers and protective layers, such as silver halide photographic film, photographic paper, film for printing plate making, emulsion mask for photomasks, silver halide emulsion layers (silver salt-containing layers) and protection Layers can be applied as appropriate.

  In particular, a silver salt photographic film (silver salt photosensitive material) is preferable as the photosensitive material, and a black and white silver salt photographic film (monochrome silver salt photosensitive material) is the best. The silver salt applied to the silver salt-containing layer is most preferably silver halide. The width of the photosensitive material is, for example, 20 cm or more, and the thickness is preferably 50 to 200 μm.

[Transparent film substrate 12]
As the transparent film substrate 12 of the photosensitive material used in the manufacturing method of the present embodiment, a plastic film or the like can be used.

  Examples of the raw material for the plastic film include, for example, polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate; polyolefins such as polyethylene (PE), polypropylene (PP), polystyrene, and EVA; polyvinyl chloride and polyvinylidene chloride. , PVB and other vinyl-based resins; polyether ether ketone (PEEK), polysulfone (PSF), polyether sulfone (PES), polycarbonate (PC), polyamide, polyimide, acrylic resin, triacetyl cellulose (TAC), etc. Can be used.

  In the present embodiment, the plastic film is preferably a polyethylene terephthalate film or triacetyl cellulose (TAC) from the viewpoint of translucency, heat resistance, ease of handling, and price.

  Since the transparent heating element for window glass requires translucency, the translucency of the transparent film substrate 12 is desirably high. In this case, the total visible light transmittance of the plastic film is preferably 70 to 100%, more preferably 85 to 100%, and particularly preferably 90 to 100%. Moreover, in this invention, what was colored to such an extent that the objective of this invention is not prevented as said plastic film can also be used.

  The plastic film in this embodiment can be used as a single layer, but can also be used as a multilayer film in which two or more layers are combined.

[Protective layer]
The photosensitive material used may be provided with a protective layer on the emulsion layer described later. In the present embodiment, the “protective layer” means a layer made of a binder such as gelatin or a high molecular polymer, and is formed on a photosensitive emulsion layer in order to exhibit an effect of preventing scratches or improving mechanical properties. . The protective layer is preferably not provided for the plating treatment, and even if it is provided, it is preferably thin. The thickness is preferably 0.2 μm or less. The formation method of the coating method of the said protective layer is not specifically limited, A well-known coating method can be selected suitably.

[Emulsion layer]
The photosensitive material used in the production method of the present embodiment preferably has an emulsion layer (silver salt-containing layer) containing a silver salt as a photosensor on the transparent film substrate 12. In addition to the silver salt, the emulsion layer in the present embodiment can contain a dye, a binder, a solvent, and the like as required.

<Silver salt>
The silver salt used in the present embodiment is preferably an inorganic silver salt such as silver halide. In particular, the silver salt is preferably used in the form of silver halide grains for a silver halide photographic light-sensitive material. Silver halide is excellent in characteristics as an optical sensor.

  The silver halide preferably used in the form of a photographic emulsion of the silver halide photographic light-sensitive material will be described.

  In the present embodiment, it is preferable to use silver halide in order to function as an optical sensor, and a technique used for silver halide photographic film, photographic paper, printing plate making film, emulsion mask for photomask, etc. relating to silver halide. Can also be used in this embodiment.

  The halogen element contained in the silver halide may be any of chlorine, bromine, iodine and fluorine, or a combination thereof. For example, silver halide mainly composed of AgCl, AgBr, and AgI is preferably used, and silver halide mainly composed of AgBr or AgCl is preferably used. Silver chlorobromide, silver iodochlorobromide and silver iodobromide are also preferably used. More preferred are silver chlorobromide, silver bromide, silver iodochlorobromide and silver iodobromide, and most preferred are silver chlorobromide and silver iodochlorobromide containing 50 mol% or more of silver chloride. Used.

  Here, “silver halide mainly composed of AgBr (silver bromide)” refers to silver halide in which the molar fraction of bromide ions in the silver halide composition is 50% or more. The silver halide grains mainly composed of AgBr may contain iodide ions and chloride ions in addition to bromide ions.

  The silver halide emulsion used in this embodiment may contain a metal belonging to Group VIII or Group VIIB. In particular, it is preferable to contain a rhodium compound, an iridium compound, a ruthenium compound, an iron compound, an osmium compound or the like in order to obtain a gradation of 4 or more or to achieve low fog.

For high sensitivity, doping with a metal hexacyanide complex such as K ₄ [Fe (CN) ₆ ], K ₄ [Ru (CN) ₆ ] or K ₃ [Cr (CN) ₆ ] is advantageous. Done.

The amount of these compounds added is preferably 10 ⁻¹⁰ to 10 ⁻² mol / mol Ag per mol of silver halide, more preferably 10 ⁻⁹ to 10 ⁻³ mol / mol Ag.

  In addition, in the present embodiment, silver halide containing Pd (II) ions and / or Pd metal can be preferably used. Pd may be uniformly distributed in the silver halide grains, but is preferably contained in the vicinity of the surface layer of the silver halide grains. Here, Pd “contains in the vicinity of the surface layer of the silver halide grains” means that the Pd content is higher than the other layers within 50 nm in the depth direction from the surface of the silver halide grains. means.

  Such silver halide grains can be prepared by adding Pd in the course of forming silver halide grains. After adding silver ions and halogen ions to 50% or more of the total addition amount, Pd Is preferably added. It is also preferred that Pd (II) ions be present in the surface layer of the silver halide by a method such as addition at the time of post-ripening.

  The Pd-containing silver halide grains increase the speed of physical development and electroless plating, increase the production efficiency of a desired heating element, and contribute to the reduction of production costs. Pd is well known and used as an electroless plating catalyst. However, in the present invention, Pd can be unevenly distributed on the surface layer of silver halide grains, so that extremely expensive Pd can be saved. is there.

In the present embodiment, the content of Pd ions and / or Pd metal contained in the silver halide is 10 ^{−4 to} 0.5 mol / mol Ag with respect to the number of moles of silver in the silver halide. It is more preferable that it is 0.01-0.3 mol / mol Ag.

Examples of the Pd compound to be used include PdCl ₄ and Na ₂ PdCl ₄ .

  In this embodiment, in order to further improve the sensitivity as an optical sensor, chemical sensitization performed with a photographic emulsion can be performed. As the chemical sensitization method, sulfur sensitization, selenium sensitization, chalcogen sensitization such as tellurium sensitization, noble metal sensitization such as gold sensitization, reduction sensitization and the like can be used. These are used alone or in combination. When the above chemical sensitization methods are used in combination, for example, sulfur sensitization method and gold sensitization method, sulfur sensitization method and selenium sensitization method and gold sensitization method, sulfur sensitization method and tellurium sensitization. A combination of a method and a gold sensitization method is preferable.

<Binder>
In the emulsion layer, a binder can be used for the purpose of uniformly dispersing silver salt grains and assisting the adhesion between the emulsion layer and the support. In the present invention, as the binder, both a water-insoluble polymer and a water-soluble polymer can be used as a binder, but a water-soluble polymer is preferably used.

  Examples of the binder include polysaccharides such as gelatin, polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), starch, cellulose and derivatives thereof, polyethylene oxide, polysaccharides, polyvinylamine, chitosan, polylysine, polyacrylic acid, poly Examples include alginic acid, polyhyaluronic acid, and carboxycellulose. These have neutral, anionic, and cationic properties depending on the ionicity of the functional group.

  The content of the binder contained in the emulsion layer is not particularly limited, and can be appropriately determined as long as dispersibility and adhesion can be exhibited. For example, the content of the binder contained in the emulsion layer can be adjusted so that the Ag / binder volume ratio in the silver salt-containing layer is 1/4 or more, or adjusted to be 1/2 or more. it can.

<Solvent>
The solvent used for the formation of the emulsion layer is not particularly limited. For example, water, organic solvents (for example, alcohols such as methanol, ketones such as acetone, amides such as formamide, dimethyl sulfoxide, etc. Sulphoxides, esters such as ethyl acetate, ethers, etc.), ionic liquids, and mixed solvents thereof.

  The content of the solvent used in the emulsion layer of the present invention is in the range of 30 to 90% by mass and in the range of 50 to 80% by mass with respect to the total mass of silver salt, binder and the like contained in the emulsion layer. Preferably there is.

  Next, each process for forming the electroconductive part 14 is demonstrated.

[exposure]
In this embodiment, the photosensitive material having the silver salt emulsion layer 58 provided on the transparent film substrate 12 is exposed. The exposure can be performed using electromagnetic waves. Examples of the electromagnetic wave include light such as visible light and ultraviolet light, and radiation such as X-rays. Furthermore, a light source having a wavelength distribution may be used for exposure, or a light source having a specific wavelength may be used.

  As an exposure method for forming a pattern image, a surface exposure method for irradiating a photosensitive surface with uniform light through a mask pattern to form a mask pattern imagewise, and a pattern irradiation unit by scanning a beam such as a laser beam There is a scanning exposure method in which is formed on the photosensitive surface. In order to design a compact, inexpensive, long-life, and highly stable apparatus, it is most preferable to perform exposure using a semiconductor laser.

[Development processing]
In this embodiment, after the emulsion layer is exposed, development processing is further performed. The development processing can be performed by a normal development processing technique used for silver salt photographic film, photographic paper, printing plate-making film, photomask emulsion mask, and the like. The developer is not particularly limited, but a PQ developer, MQ developer, MAA developer and the like can also be used. Commercially available products include, for example, CN-16, CR-56, CP45X, and FD prescribed by FUJIFILM Corporation. -3, Papitol, a developer such as C-41, E-6, RA-4, D-19, D-72, etc. formulated by KODAK, or a developer included in the kit can be used. A lith developer can also be used.

  As the lith developer, D85 or the like prescribed by KODAK can be used. In the present invention, by performing the above-described exposure and development processing, a metal silver portion 44, preferably a patterned metal silver portion, is formed in the exposed portion, and the above-described light transmissive portion 46 is formed in the unexposed portion. .

  The developer used in the development process can contain an image quality improver for the purpose of improving the image quality. Examples of the image quality improver include nitrogen-containing heterocyclic compounds such as benzotriazole. Further, when a lith developer is used, it is particularly preferable to use polyethylene glycol.

  The mass of the metallic silver contained in the exposed portion after the development treatment is preferably a content of 50% by mass or more, and 80% by mass or more with respect to the mass of silver contained in the exposed portion before exposure. More preferably. If the mass of silver contained in the exposed portion is 50% by mass or more based on the mass of silver contained in the exposed portion before exposure, it is preferable because high conductivity can be obtained.

  The gradation after the development processing in the present embodiment is not particularly limited, but is preferably more than 4.0. When the gradation after the development processing exceeds 4.0, the conductivity of the conductive metal portion can be increased while keeping the light transmissive property of the light transmissive portion high. Examples of means for setting the gradation to 4.0 or higher include the aforementioned doping of rhodium ions and iridium ions.

[Physical development and plating]
In the present embodiment, for the purpose of improving the conductivity of the metal silver portion 44 formed by the exposure and development processing described above, physical development and / or plating treatment for supporting the conductive metal particles on the metal silver portion 44. May be performed. In the present embodiment, it is possible to support the conductive metal particles on the metal silver portion 44 by only one of physical development and plating treatment, but the conductive metal particles are further combined by combining physical development and plating treatment. It can also be carried on the metallic silver part 44.

[Calendar processing]
The developed metallic silver portion 44 (entire metallic silver portion, metallic mesh pattern portion or metallic wiring pattern portion) may be smoothed by performing a calendar process. As a result, the conductivity of the metallic silver portion 44 is significantly increased. The calendar process can be performed by a calendar roll. The calendar roll usually consists of a pair of rolls.

As a roll used for the calendar process, a plastic roll or a metal roll such as epoxy, polyimide, polyamide, polyimide amide or the like is used. In particular, when emulsion layers are provided on both sides, it is preferable to treat with metal rolls. When an emulsion layer is provided on one side, a combination of a metal roll and a plastic roll can be used from the viewpoint of preventing wrinkles. The upper limit of the linear pressure is 1960 N / cm (200 kgf / cm, converted to a surface pressure of 699.4 kgf / cm ² ) or more, more preferably 2940 N / cm (300 kgf / cm, converted to a surface pressure of 935.8 kgf / cm ^2). ) That's it. The upper limit of the linear pressure is 6880 N / cm (700 kgf / cm) or less.

  The application temperature of the smoothing treatment represented by the calender roll is preferably 10 ° C. (no temperature control) to 100 ° C., and the more preferable temperature varies depending on the line density and shape of the metal mesh pattern and metal wiring pattern, and the binder type. , Approximately 10 ° C. (no temperature control) to 50 ° C.

[Vapor contact treatment]
The effect of the calendar process can be further brought out by bringing it into contact with steam immediately before or after the calendar process. That is, the conductivity can be significantly improved. The temperature of the steam used is preferably 80 ° C. or higher, more preferably 100 ° C. or higher and 140 ° C. or lower. The contact time with steam is preferably about 10 seconds to 5 minutes, more preferably 1 minute to 5 minutes.

  In addition, this invention can be used in combination with the technique of the publication gazette and international publication pamphlet which are described in following Table 1 and Table 2. FIG. Notations such as “JP,” “Gazette” and “No. Pamphlet” are omitted.

  Hereinafter, the present invention will be described more specifically with reference to examples of the present invention. In addition, the material, usage-amount, ratio, processing content, processing procedure, etc. which are shown in the following Examples can be changed suitably unless it deviates from the meaning of this invention. Accordingly, the scope of the present invention should not be construed as being limited by the specific examples shown below.

[First embodiment]
(Silver halide photosensitive material)
An emulsion containing 10.0 g of gelatin per 60 g of Ag in an aqueous medium and containing silver iodobromochloride grains having an average equivalent spherical diameter of 0.1 μm (I = 0.2 mol%, Br = 40 mol%) was prepared. .

In this emulsion, K ₃ Rh ₂ Br ₉ and K ₂ IrCl ₆ were added so as to have a concentration of 10 ⁻⁷ (mol / mol silver), and silver bromide grains were doped with Rh ions and Ir ions. . After adding Na ₂ PdCl ₄ to this emulsion and further performing gold-sulfur sensitization with chloroauric acid and sodium thiosulfate, together with the gelatin hardener, the coating amount of silver is 1 g / m ^2. It was coated on polyethylene terephthalate (PET). At this time, the volume ratio of Ag / gelatin was ½.

  Coating was performed for 20 m with a width of 25 cm on a PET support having a width of 30 cm, and both ends were cut off by 3 cm so as to leave a central portion of the coating, thereby obtaining a roll-shaped silver halide photosensitive material.

(Generation of exposure pattern)
As an initial function in step S101 in FIG. 4, reference sine wave information was input. This sine wave information has a half cycle of 1.35 mm and an amplitude of 0.5 mm. In addition, as an initial setting in step S102, the interval between the wave lines 20 is set to 2.7 mm. At this time, the amplitude was set within a range not exceeding the line interval. The line width of the wave line 20 is 20 μm, the number Na of half-wave wave lines is 120, the number Nb of the wave lines 20 included in the main line pattern 22 is 60, and wiring is performed between a pair of adjacent wave lines 20. The number Nc of sub-lines 24 is set to two.

As a pseudo random number generator, Mersenne Twister is used as an example, and the cycle is 2 ¹⁹⁹³⁷ -1. Irregularity was defined by what percentage of the maximum allowable sinusoidal period, amplitude, and line spacing. When the cycle is set to ± 50%, the amplitude is set to ± 30%, and the line interval is set to ± 10%, the cycle is maximum | 0.675 | mm, the amplitude is | 0.15 | mm, and the line interval is | 0.27. It can be changed within the range of | mm. As shown in the flowcharts shown in FIGS. 4 to 6, each time the wavy line 20a is drawn for a half cycle, a pseudo-random number is acquired (converted to 0-100) by the random number generator, and the next half cycle is drawn. The parameter was updated.

  When 120 wavy lines 20a having irregularities in one direction are drawn, adjacent wave lines 20 are drawn with a line interval having irregularities in the above range in the line interval. The line spacing at this time is also updated by acquiring a random number every time one line is drawn.

  When the drawing of the wave line 20 in one direction, that is, the drawing of the main line pattern 22 is finished, the area of the closed section 26 becomes the same by the number set between the lines of the drawn main line pattern 22. The subline 24 was drawn.

  When the drawing of the exposure pattern (drawing of the main line pattern 22 and drawing of the sub line) was completed, the exposure pattern was input to the exposure apparatus.

(exposure)
Exposure of the exposure pattern to the silver halide photosensitive material is performed by arranging exposure heads using DMD (digital mirror device) described in the embodiment of Japanese Patent Application Laid-Open No. 2004-1224 so as to have a width of 25 cm. The exposure head and exposure stage are curved and arranged so that the laser beam forms an image on the photosensitive layer of the material, and the photosensitive material feeding mechanism and winding mechanism are attached, and the tension control and winding and feeding mechanism of the exposure surface are attached. The continuous exposure apparatus was provided with a bend having a buffering action so that the speed fluctuation of the above does not affect the speed of the exposed portion. The wavelength of exposure was 400 nm, the beam shape was approximately 12 μm, and the output of the laser light source was 100 μJ.

(Development processing)
・ Developer 1L formulation Hydroquinone 20 g
Sodium sulfite 50 g
Potassium carbonate 40 g
Ethylenediamine tetraacetic acid 2 g
Potassium bromide 3 g
Polyethylene glycol 2000 1 g
Potassium hydroxide 4 g
Adjusted to pH 10.3 and formulated 1L fixer ammonium thiosulfate solution (75%) 300 ml
Ammonium sulfite monohydrate 25 g
1,3-diaminopropane tetraacetic acid 8 g
Acetic acid 5 g
Ammonia water (27%) 1 g
Adjust to pH 6.2

  The photosensitive material exposed using the above-mentioned processing agent is processed using an automatic developing machine FG-710PTS manufactured by FUJIFILM Corporation. Development conditions: development at 35 ° C. for 30 seconds, fixing at 34 ° C. for 23 seconds, washing with running water (5 L / min) for 20 seconds Made in the process.

As running conditions, the processing amount of the photosensitive material was 100 m ² / day, the developer was replenished at 500 ml / m ² , and the fixing solution was 640 ml / m ² for 3 days. At this time, it was confirmed that the copper pattern after the plating treatment had a 12 μm line width and a 300 micron pitch.

  Further, plating solution (copper sulfate 0.06 mol / L, formalin 0.22 mol / L, triethanolamine 0.12 mol / L, polyethylene glycol 100 ppm, yellow blood salt 50 ppm, α, α′-bipyridine 20 ppm is contained. Electroless copper plating treatment at 45 ° C. using an electroless Cu plating solution having a pH of 12.5), followed by oxidation treatment with an aqueous solution containing 10 ppm Fe (III) ions. A conductive film was obtained.

[Evaluation]
(Surface resistance measurement)
In order to evaluate the uniformity of the surface resistivity, the surface resistivity of the conductive film 10 was measured at 10 arbitrary locations using a Lillestar GP (model number MCP-T610) series 4-probe probe (ASP) manufactured by Dia Instruments. Is the average value.

(Evaluation of glare)
A transparent plate for installing the conductive film 10 is disposed. The transparent plate is made of glass having a thickness of 5 mm and imitates a window glass. A conductive film is pasted on a transparent plate, the room is darkened, an incandescent lamp (40 watt bulb) is turned on at a distance of 3 m from the transparent plate, light is observed through the transparent plate, and glare due to interference of diffracted light is observed. Observation and evaluation were performed. The visibility of glare was performed at an observation distance of 1 m from the front of the transparent plate (the surface on which the conductive film 10 was installed).

(Evaluation results)
In the 10 conductive films, glare did not appear, the surface resistivity was at a level that could be sufficiently put into practical use as a transparent heating element, and the translucency was also good.

[Second Embodiment]
Next, the pattern generation processing shown in FIGS. 4 to 6 is adjusted to change various ratios (L1 / L2) of the length L1 of the first side and the length L2 of the second side of the closed section (square). In the same manner as in the first example, six types of conductive films (samples 1 to 6) were obtained. As shown in FIG. 11, the breakdown of samples 1 to 6 is as follows: sample 1 has a ratio (L1 / L2) of 1, sample 2 has a ratio (L1 / L2) of 2.5, and sample 3 has a ratio (L1 / L2). 5, sample 4 has a ratio (L1 / L2) of 10, sample 5 has a ratio (L1 / L2) of 50, and sample 6 has a ratio (L1 / L2) of 100.

Samples 1 to 6 were subjected to sensory evaluation of diffraction images and wiring visibility by four evaluators. The evaluation results are shown in FIG. In the graph of FIG. 11, the horizontal axis represents the ratio (L1 / L2) and the vertical axis represents the evaluation score. The evaluation result of the diffraction image is indicated by “Δ”, and the evaluation result of the wiring visibility is indicated by “◯”. The breakdown of evaluation points is as follows.
Evaluation score 0: very conspicuous
Evaluation point 1: Stand out
Evaluation point 2: Slightly conspicuous
Evaluation point 3: almost inconspicuous
Evaluation point 4: Not noticeable at all

  From the evaluation results of FIG. 11, when the ratio (L1 / L2) is 5 or more, the diffraction image and the wiring visibility are hardly noticeable, and when the ratio (L1 / L2) is 50 or more, the diffraction image and the wiring visibility. It turns out that is not conspicuous.

  Note that the conductive film and the transparent heating element according to the present invention are not limited to the above-described embodiments, and can of course have various configurations without departing from the gist of the present invention.

DESCRIPTION OF SYMBOLS 10 ... Conductive film 12 ... Transparent film base material 14 ... Conductive part 16 ... Opening part 20 ... Wave line 20a ... Wave line 22 ... Main line pattern 24 ... Sub line 40 ... Silver salt photosensitive layer

Claims (14)

In a pattern generation method for generating, using a computer, a wiring pattern constituting a conductive portion in a conductive film having a conductive portion and an opening on a transparent film substrate,
The conductive portion electrically connects a main line pattern in which a plurality of wave lines formed along a first direction are arranged in a second direction orthogonal to the first direction and adjacent wave lines. A plurality of sub-lines
Entering an initial function;
Generating a wave line pattern in a first direction while randomly changing at least the period of the initial function; and
A second step of randomly changing an interval between the drawn wave line and a wave line adjacent to the wave line in a second direction (a direction orthogonal to the first direction);
The main line pattern in which a plurality of wave lines formed along the first direction are arranged in the second direction orthogonal to the first direction by repeating the first step and the second step. A third step of generating,
And a fourth step of generating a pattern of two or more sub-lines connecting adjacent wave lines between the rows in the main line pattern when the adjacent wave lines are defined as line intervals. Generation method. The pattern generation method according to claim 1,
The third step draws the main line pattern in the image memory by drawing the wave line pattern in the image memory of the computer,
In the fourth step, the sub-line pattern is drawn in the image memory,
A pattern generation method, wherein the wiring pattern is drawn in the image memory. The pattern generation method according to claim 1,
The initial function is a sinusoidal function;
The first step generates a wave line pattern by generating a wave line having a half cycle of the sine wave while randomly changing at least the cycle of the sine wave every half cycle. Generation method. The pattern generation method according to claim 3,
The first step generates a wave line having a half-cycle of the sine wave while randomly changing at least the cycle and amplitude of the sine wave every half cycle to generate the wave line pattern. Pattern generation method. The pattern generation method according to claim 3,
The first step generates a wave line pattern of the wave line by generating a wave line having a half period of the sine wave while randomly changing at least the period, amplitude and phase of the sine wave every half period. A characteristic pattern generation method. The pattern generation method according to claim 3,
The first step is to generate a wave line having a half-cycle of the sine wave by randomly changing a period, an amplitude, a phase, and a line width every half cycle, thereby generating the wave line pattern. Pattern generation method. The pattern generation method according to claim 3,
The second step includes
The maximum value of the amplitude of the wavy line in one wave line is limited to 1/2 or less of the distance between the other wave line adjacent to the one wave line, and the interval is set. Pattern generation method. The pattern generation method according to claim 1,
The pattern generation method according to claim 4, wherein the fourth step generates a linear pattern of the sub-line along the second direction. The pattern generation method according to claim 1,
In the pattern generating method, the fourth step generates the pattern of the sub-line while randomly changing the position of the sub-line for each row. The pattern generation method according to claim 1,
The wiring pattern is
The shape of the closed section surrounded by each center line of the adjacent wave line and each center line of the adjacent sub line between the adjacent wave lines is a quadrangle,
A pattern generation method characterized in that a large number of the closed sections are arranged. The pattern generation method according to claim 10,
A pattern generation method, wherein the closed sections have substantially the same area. The pattern generation method according to claim 10,
The pattern generation method characterized in that the perimeters of the closed sections are substantially the same. The pattern generation method according to claim 10,
When the length of the first side by the center line of the wave line constituting the closed section is L1, and the length of the second side by the center line of the sub line constituting the closed section is L2,
The pattern generation method characterized in that a ratio (L1 / L2) between the length L1 of the first side and the length L2 of the second side is 5 or more. A pattern generation program for generating a wiring pattern constituting a conductive portion in a conductive film having a conductive portion and an opening on a transparent film substrate,
The conductive portion electrically connects a main line pattern in which a plurality of wave lines formed along a first direction are arranged in a second direction orthogonal to the first direction and adjacent wave lines. A plurality of sub-lines
On the computer,
Entering an initial function;
A first step of generating a wave line pattern in a first direction while randomly changing at least the period of the initial function;
A second step of randomly changing an interval between the drawn wave line and a wave line adjacent to the wave line in a second direction (a direction orthogonal to the first direction);
The main line pattern in which a plurality of wave lines formed along the first direction are arranged in the second direction orthogonal to the first direction by repeating the first step and the second step. A third step of generating,
A pattern generation program for executing a fourth step of generating a pattern of two or more sub-lines connecting adjacent wave lines between each row in the main line pattern when the adjacent wave lines are defined as rows.

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