JP2013084885A - Wiring substrate for probe card, and probe card using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that improvement is required to obtain a wiring substrate for a probe card of which burn-in test is shortened, since a problem may occur that, in a case where temperature is changed in burn-in test, a terminal on a wafer cannot be electrically connected to a probe because the wiring substrate for a probe card deflects, as a result, the time required for the burn-in test cannot be shortened.SOLUTION: A wiring substrate 3 for a probe card is equipped with a via 2 which contains a dummy via 2b. An area ratio of the via 2 against an insulating base body 1 in a lateral cross section of a surface layer part 1a is higher than an area ratio of the via 2 against the insulating base body in a lateral cross section of an inner layer part 1b. As a result, heat is efficiently conducted to the inner layer part 1b by the dummy via 2b in addition to a connection via 2a from the upper and lower surface layer parts 1a of the wiring substrate 3 for a probe card. Thus, a steady temperature distribution state is available at the time of burn-in test in a short time, thereby shortening the time required for the burn-in test.

Description

  The present invention relates to a probe card wiring board and a probe card using the same.

  In recent years, as the amount of electronic devices used has increased, electrical testing has conventionally been performed after mounting elements such as electronic components (including semiconductor components) on a package. Since time can be saved and the efficiency of the test increases as the wafer becomes larger, it is common to perform an electrical test on the device in the wafer state. A ceramic probe card wiring board is used for a probe card for testing this element in a wafer state.

  As an insulating substrate used for such a probe card wiring board, the thermal expansion coefficient is relatively close to the thermal expansion coefficient of the wafer, and alumina ceramics having a relatively high strength or the mullite close to the thermal expansion coefficient of the wafer. A probe card wiring board using a high quality ceramic is preferably used. (For example, see Patent Document 1).

Japanese Patent Laid-Open No. 11-160356

  However, if the same probe card is used for not only testing at room temperature but also burn-in testing performed at low and high temperatures, the probe card wiring board is used when the probe card is heated from room temperature to high temperature or cooled to low temperature. Has a large heat capacity and relatively low thermal conductivity compared to other materials that make up the probe card, so it takes time to heat and cool the probe card wiring board to achieve a steady temperature distribution. Before the steady state is reached, the probe card wiring board warps and the terminals on the wafer are not electrically connected to the probe, so the burn-in test time cannot be shortened. In order to obtain a probe card wiring board capable of shortening the length, improvement is necessary.

  A wiring board for a probe card according to one aspect of the present invention is made of ceramics, and includes an insulating base having a surface layer portion and an inner layer portion, a plurality of connection vias provided in the surface layer portion and the inner layer portion, and the surface layer portion. A plurality of vias including a plurality of dummy vias provided, wherein an area ratio of the plurality of vias to the insulating substrate in a cross section of the surface layer portion is the plurality of the plurality of vias to the insulating substrate in a cross section of the inner layer portion. It is characterized by being higher than the via area ratio.

  In the probe card wiring board according to another aspect of the present invention, in the above configuration, in the cross section of the surface layer portion, the first region provided with the plurality of connection vias is polygonal, A region is surrounded by a second region provided with the plurality of dummy vias.

In the probe card wiring board according to another aspect of the present invention, in the above configuration, an area ratio of the plurality of dummy vias to the insulating base in the second region is the plurality of the plurality of dummy vias relative to the insulating base in the first region. It is characterized by being equivalent to the area ratio of the connection via.

  In the probe card wiring board according to another aspect of the present invention, in each of the above configurations, the second region includes a circular third region surrounding the first region and a fourth region surrounding the third region. The area ratio of the plurality of dummy vias to the insulating base in the third region is equal to the area ratio of the plurality of connection vias to the insulating base in the first region. And an area ratio of the plurality of dummy vias to the insulating base in the fourth region is smaller than an area ratio of the plurality of dummy vias to the insulating base in the third region.

  A probe card according to another aspect of the present invention includes the probe card wiring board having the above-described configuration and a plurality of probes electrically connected to the plurality of connection vias.

  In the probe card wiring board according to one aspect of the present invention, an insulating substrate made of ceramics and having a surface layer portion and an inner layer portion, a plurality of connection vias provided in the surface layer portion and the inner layer portion, and provided in the surface layer portion A plurality of vias including a plurality of dummy vias, and an area ratio of the plurality of vias to the insulating base in the cross section of the surface layer portion is higher than an area ratio of the plurality of vias to the insulating base in the cross section of the inner layer portion. . By including such a configuration, the probe card wiring board according to one aspect of the present invention is efficiently provided with dummy vias in addition to connection vias from the upper and lower surface layers of the probe card wiring board. Since heat is conducted, when the heat is applied from the outside to the probe card wiring board during the burn-in test or cooled, it becomes a steady temperature distribution in a shorter time than when there is no dummy via. Improvements have been made in reducing the time taken for burn-in testing.

  In the probe card wiring board according to another aspect of the present invention, in the cross section of the surface layer portion, the first region provided with a plurality of connection vias is polygonal, and the first region is provided with a plurality of dummy vias. Surrounded by the second region. The probe card wiring board according to another aspect of the present invention includes such a configuration, and therefore, due to the difference in thermal behavior between the via and the insulating base, the first region in which the plurality of connection vias are provided. By reducing the stress that tends to concentrate on the corners, the probe card wiring board is less likely to be deformed and cracked.

  In the probe card wiring board according to another aspect of the present invention, in the cross section of the surface layer portion, the area ratio of the plurality of dummy vias to the insulating base in the second region is the plurality of connection vias to the insulating base in the first region. It is equivalent to the area ratio. The probe card wiring board according to another aspect of the present invention includes such a configuration, whereby stress concentration can be more effectively mitigated, and deformation and cracks are less likely to occur in the probe card wiring board. Can be.

In the probe card wiring board according to another aspect of the present invention, in the cross section of the surface layer portion, the second region includes a circular third region surrounding the first region and a fourth region surrounding the third region. The area ratio of the plurality of dummy vias to the insulating base in the third region is equal to the area ratio of the plurality of connection vias to the insulating base in the first region, and the area in the fourth region The area ratio of the plurality of dummy vias to the insulating base is smaller than the area ratio of the plurality of dummy vias to the insulating base in the third region. Since the probe card wiring board according to another aspect of the present invention includes such a configuration, vias including a plurality of connection vias and a plurality of dummy vias are provided in the first region and the third region. Since the area ratio of the via to the insulating base is the same in a circular shape, the stress that is likely to be generated due to the difference in thermal behavior between the via and the insulating base is more effectively relieved, and the first region and the first area in the plan view are reduced. The area ratio of the via to the insulating base is gradually reduced from the area 3 to the outside, and the stress that is likely to be generated due to the difference in thermal behavior between the via and the insulating base is dispersed to more effectively reduce the stress concentration. In the probe card wiring board, deformation and cracks are unlikely to occur.

  A probe card according to another aspect of the present invention includes a probe card wiring board configured as described above and a plurality of probes that are electrically connected to a plurality of connection vias. When heat is applied to the wiring board from the outside or cooled, a steady temperature distribution state is achieved in a shorter time than when no dummy via is provided, so that the time required for the burn-in test is improved.

(A) is a top view which shows the wiring board for probe cards in embodiment of this invention, (b) is a longitudinal cross-sectional view in the AA line of the wiring board for probe cards shown by (a). FIG. 2 is an enlarged view of a portion indicated by a symbol B in the probe card wiring board shown in FIG. It is sectional drawing which expands and shows the principal part of the other example of the wiring board for probe cards in embodiment of this invention. It is sectional drawing which expands and shows the principal part of the other example of the wiring board for probe cards in embodiment of this invention. (A) is a top view of an example of the principal part of the wiring board for probe cards shown by the cross section in FIG. 2, (b) is also the cross section of the surface layer part 1a by CC line of the principal part It is a top view of an example, (c) is a top view of an example of the cross section of the inner layer part 1b by the DD line of the principal part similarly. (A) is the top view of the cross section by the EE line of an example of the principal part of the wiring board for probe cards shown by sectional drawing in FIG. 2, (b) is by the FF line of a waist part similarly It is a top view of a cross section, (c) is a bottom view of an example of a principal part similarly. (A) is the top view of the cross section by the EE line of the other example of the principal part of the wiring board for probe cards shown by sectional drawing in FIG. 2, (b) is another part of a principal part similarly It is a top view of the cross section by the FF line of an example, (c) is a bottom view of the other example of the principal part similarly. (A) is the top view of the cross section by the EE line of the other example of the principal part of the wiring board for probe cards shown by sectional drawing in FIG. 2, (b) is another part of a principal part similarly It is a top view of the cross section by the FF line of an example, (c) is a bottom view of the other example of the principal part similarly. (A), (b) is a top view which shows the other example of the wiring board for probe cards in embodiment of this invention.

  Exemplary embodiments of the present invention will be described with reference to the drawings.

  As shown in FIGS. 1A and 1B and FIG. 2, the probe card wiring board 3 in the embodiment of the present invention includes an insulating base 1 including a plurality of insulating layers 1 c, and an insulating layer. 1 c for connecting to a probe or an external circuit on the front and back surfaces of each layer 1 c, an internal wiring layer 6 having a role of signal, power supply, ground, etc., a via 2 penetrating the insulating layer 1 c, and an upper portion and a lower portion of the insulating substrate 1. Land 4 is included. The via 2 includes a connection via 2a for the main purpose of electrical connection and a dummy via 2b for the main purpose of improving thermal conductivity.

  In the probe card wiring board 3 according to the present embodiment shown in FIGS. 1A and 1B and FIG. 2, an insulating substrate 1 made of ceramics and having a surface layer portion 1a and an inner layer portion 1b, and a surface layer portion 1a And a via 2 including a plurality of connection vias 2a provided in the inner layer portion 1b and a plurality of dummy vias 2b provided in the surface layer portion 1a, and a plurality of vias for the insulating substrate 1 in the cross section of the surface layer portion 1a. The area ratio of the vias 2 is higher than the area ratio of the plurality of vias 2 to the insulating base in the cross section of the inner layer portion 1b. Since the probe card wiring board 3 according to the present embodiment includes such a configuration, the upper and lower surface layer parts 1a to the inner layer part 1b of the probe card wiring board 3 are connected to the dummy vias 2b in addition to the connection vias 2a. Therefore, when the heat is applied to the probe card wiring board 3 from the outside or cooled during the burn-in test, the heat is more steady than the case without the dummy via 2b. Since it is in a temperature distribution state, it is improved with respect to shortening the time required for the burn-in test.

The insulating layer 1c of the insulating substrate 1 includes an aluminum oxide (alumina: Al ₂ O ₃ ) sintered body, an aluminum nitride (AlN) sintered body, a silicon carbide (SiC) sintered body, a mullite sintered body, It consists of ceramics such as glass ceramics. When used for a probe card, an aluminum oxide (Al ₂ O ₃ ) sintered body, a mullite (3Al ₂ O ₃ .2SiO ₂ ) sintered body having a thermal expansion coefficient close to that of silicon (Si) forming a wafer, or Glass ceramics are preferred.

  Via 2, internal wiring layer 6 and lower land 4 of probe card wiring board 3 are formed by simultaneous firing with insulating layer 1 c, tungsten (W), molybdenum (Mo), molybdenum-manganese (Mo—Mn) alloy , Silver (Ag), copper (Cu), gold (Au), silver-palladium (Pd) alloy, etc.

  For example, when the insulating layer 1c is formed of an aluminum oxide sintered body, the probe card wiring board 3 is manufactured by the following method. First, an appropriate organic binder and solvent are added to and mixed with raw material powders of aluminum oxide, silicon oxide, magnesium oxide and calcium oxide to form a slurry, which is formed into a sheet by a doctor blade method or the like, and an insulating layer 1c. A plurality of ceramic green sheets are produced.

  Next, through holes are formed by punching or laser processing using a mold or the like at predetermined positions where vias of the ceramic green sheet are formed, and the through holes are filled with a conductive paste. In addition, a conductor paste layer serving as the internal wiring layer 6 or, if necessary, the lower land 4 is formed to a thickness of 10 to 20 μm at a predetermined position of the ceramic green sheet by screen printing or the like. The conductor paste is produced by kneading a metal powder having a high melting point such as tungsten, molybdenum, molybdenum-manganese alloy, an appropriate resin binder, and a solvent. When the through hole is formed by laser processing, it is not necessary to have a shape considering durability unlike the processing by a mold, and it is preferable because an optimal shape can be determined according to the application.

The dummy via 2b or the dummy internal wiring layer 6b may be formed using the above-mentioned conductor paste. However, since there is no need for electrical connection, an insulating powder such as aluminum nitride powder or silicon carbide powder having high thermal conductivity is suitable. Insulating dummy conductor paste prepared by kneading an appropriate resin binder and solvent, filling the dummy through-hole with dummy conductor paste, or by using a screen printing method, etc. When the dummy conductor paste layer to be the wiring layer 6b is formed to a thickness of 10 to 20 μm, it can be made a paste having a behavior at the time of firing closer to the insulating layer 1c than the conductor paste, so that even if the density of the dummy vias 2b is increased, insulation is achieved. By suppressing the deformation of the layer 1c during firing or by complementing the behavior during firing of the conductor paste, It preferred because it or it is possible to reduce the deformation during firing of the insulating layer 1c portion with high density of use via 2a. It is preferable to add metal powder to the insulating dummy conductor paste because the thermal conductivity can be further increased.

  Next, these ceramic green sheets are superposed and pressure-bonded to produce a laminate, and this laminate is fired at a high temperature of about 1500 ° C. to 1600 ° C. to produce a wiring board.

  If the insulating layer 1c is made of glass ceramics, the ceramic green sheet does not shrink at the temperature at which the ceramic green sheet is sintered. The green sheet suppresses the sintering shrinkage in the direction of the laminated surface of the ceramic green sheets, and the probe card wiring board 3 with a small shrinkage variation is obtained. As a result, the positional variation of the vias 2 can be reduced, which is preferable because the land 4 on the surface can be further downsized and formed at a high density.

  When the insulating layer 1c is a low-temperature fired substrate that can be fired at about 1300 ° C., a dummy via is added when copper powder or silver powder is added to the dummy conductor paste and fired at a firing temperature higher than the melting point of copper or silver. Since the copper powder or silver powder in 2b melts and welds to each other, it is preferable because the thermal conductivity becomes higher by reducing the contact resistance.

  When the dummy via 2b formed in the surface layer portion 1a is formed independently of the internal connection wiring layer 6a and the connection via 2a of the inner layer portion 1b as shown in the cross-sectional view of FIG. Design is easy because it has little influence on the electrical characteristics of

  Further, the dummy via 2b formed in the surface layer portion 1a includes an internal connection wiring layer 6a of the inner layer portion 1b and an internal dummy wiring layer 6b independent of the connection via 2a, as shown in the cross-sectional view of FIG. It is preferable to form the electrodes by connecting them since the influence on the electrical characteristics of the probe card wiring board 3 is small and the heat transfer property of the inner layer portion 1b to the insulating layer 1c is improved.

  When the dummy via 2b formed in the surface layer portion 1a is formed so as to be connected to the internal connection wiring layer 6a and the connection via 2a of the inner layer portion 1b as shown in the sectional view of FIG. 4, the insulation of the inner layer portion 1b is formed. The heat transfer to the layer 1c is improved. It is preferable to connect the dummy via 2b and the internal dummy wiring layer 6b to the grounding wiring layer because the influence on the electrical characteristics of the probe card wiring board 3 is small. If the dummy via 2b and the internal dummy wiring layer 6b are insulative, they can be connected without worrying about the portion of the internal wiring layer, which is preferable because the degree of freedom in design increases.

  It is preferable that the dummy via 2b is formed up to the surface because the thermal conductivity of heat applied from the outside is improved. Further, since the dummy through hole 2b can lead out the binder in the green sheet to the outside at the time of firing, the dummy via 2b formed in the surface layer portion 1a is also formed up to the surface in this respect. preferable. Furthermore, as shown in the example shown in FIG. 4, the structure formed through the top and bottom of the probe card wiring board 3 leads to the conduction of the binder in the green sheet to the outside even when it is thermally conductive. However, the dummy via 2b is the most preferable structure. If the internal dummy wiring layer is connected to the dummy via, the structure is more preferable in terms of heat conduction.

The upper land 4 of the probe card wiring board 3 is flattened by polishing the upper surface of the wiring board fired as described above, and then a thin film forming method such as vapor deposition, sputtering, or ion plating. Formed by. Similarly, the lower land 4 may be formed by a thin film forming method. Specifically, an underlying conductor made of, for example, a chromium (Cr) -copper (Cu) alloy layer or a titanium (Ti) -copper (Cu) alloy layer having a thickness of about 0.1 μm to 3 μm on the entire upper surface of the wiring board. A layer is formed, a resist film having a pattern-shaped opening of land 4 is formed thereon, and the resist film is used as a mask and is made of a metal such as copper or gold by plating or the like, with a thickness of about 2 μm to 10 μm. A body layer is formed. Then, the resist film is peeled and removed, and the exposed portion of the underlying conductor layer is removed by etching, whereby the land 4 is formed. A nickel or gold plating layer may be further formed on the surface by plating. As described above, the probe card wiring board 3 is formed.

  The surface layer portion 1a indicates the layer from the surface of the probe card wiring board 3 to the layer immediately before the layer on which the ground conductor layer or power source layer is formed, and the inner layer portion 1b is the ground layer body layer or power It refers to the wider one of the sandwiched layers including the layer formed on the upper surface. When the ground layer or the power supply layer is locally separated, a layer in which the ground layer or power supply layer that is mainly used is sandwiched between layers formed on the upper surface is referred to as an internal layer 1c.

  FIG. 5A is a top view of an example of a main part of the probe card wiring board 3 shown in cross section in FIG. The dummy via 2b is preferably exposed at the top of the probe card wiring board 3 from the viewpoint of thermal conductivity. In addition, it is preferable that the dummy via is exposed, since the devitrification property at the time of firing is improved and the firing time can be shortened. When it is electrically necessary for the probe card not to expose the conductor other than the land 4 of the probe card wiring board 3, the dummy via 2b on the surface is insulative or thin on the dummy via 2b on the surface. An insulating film may be formed.

5B is a top view of an example of a cross section of the surface layer portion 1a taken along the line CC of FIG. 2, and FIG. 5C is an example of a cross section of the inner layer portion 1b taken along the line DD of FIG. FIG. As can be seen from comparison between (b) and (c), although the connecting through hole 2a has a larger cross section of the inner layer portion 1b than the surface layer portion 1a, the total number of through holes 2 is reduced by the dummy through hole 2b. Then, the surface layer portion 1a is larger than the cross section of the inner layer portion 1b, and the area of the through hole 2 occupying the insulating base 1 in the cross section is larger in the surface layer portion 1a than in the inner layer portion 1b.

  FIG. 6A is a top view of a cross section of the surface layer portion 1a taken along line EE of an example of a main part of the probe card wiring board shown in the sectional view of FIG. (B) is the top view of the cross section of the surface layer part 1a similarly by the FF line of an example of a principal part. As can be seen from comparison between FIGS. 6A and 6B and FIG. 5C, the connection through-hole 2a has a dummy penetration though the inner layer portion 1b has a larger cross section than the surface layer portion 1a. Due to the holes 2b, the surface layer portion 1a is larger than the cross section of the inner layer portion 1b in the total number of the through holes 2, and the area of the through hole 2 occupying the insulating substrate 1 in the cross section is larger than that of the inner layer portion 1b. ing.

  FIG. 6C is a bottom view of an example of a main part of the probe card wiring board shown in the sectional view of FIG. The dummy via 2b is exposed at the bottom of the probe card wiring board 3. When it is electrically necessary that the conductor is not exposed except the land 4 of the probe card wiring board 3 as in the upper surface, the dummy via 2b on the surface is insulative or thin on the dummy via 2b on the surface. An insulating film may be formed.

7A is a top view of a cross section taken along line EE of another example of the main part of the probe card wiring board shown in FIG. 2, and FIG. 7B is another example of the main part. FIG. 5C is a bottom view of another example of the main part of the probe card wiring board similarly shown in FIG. 2. 7A is the same as the via 2 in FIG. 6A, but is taken along the line E-E of the surface layer 1a in FIG. 7B. The number of vias 2 in the cross section is larger than that in FIG. 6B, and the number of vias 2 increases as the surface approaches the surface portion 1a. When the number of vias 2 increases as the surface of the surface layer portion 1a is approached, the thermal conductivity of the probe card wiring board increases as the surface approaches the surface. This is preferable because the warp of the wiring board for use is small and easily settled, and the heat easily reaches the center and is likely to be in a steady state, so that the burn-in test can be performed in a shorter time.

  As shown in the example of FIG. 8A, it is preferable to increase the diameter of the dummy via 2b as compared with the connection via 2a because the thermal conductivity is improved. Furthermore, if the dummy via 2b of FIG. 8B is made larger than that of FIG. 8A, that is, if the diameter of the dummy via 2b is increased toward the surface, the number of dummy vias 2b is not increased as shown in FIG. 7B. In both cases, the closer to the surface, the higher the thermal conductivity of the probe card wiring board, which is preferable because a burn-in test can be performed in a shorter time. This is preferable because the number of through holes does not increase and the number of man-hours does not increase.

  In each of FIGS. 7 and 8, (a) and (b) each show a cross section of the lower surface layer portion 1a along the line EE or FF, but also in the upper surface layer portion 1a. Similarly, a structure in which the thermal conductivity of the probe card wiring board increases as it approaches the surface is preferable because the same effect is obtained.

  Further, if the internal dummy wiring layer 6b is formed not only in the vicinity of the dummy via 2b but also in a wide area within a range that does not adversely affect the electrical characteristics, the heat transmitted through the insulating layer 1c by the dummy via 2b is wide. Since it can be transmitted to the insulating layer 1c in the range, it is preferable because the thermal steady state is easily accelerated. In particular, it is preferable that the internal dummy wiring layer 6b is exposed on the side surface of the probe card wiring board, because it is easy to be removed through the exposed side surface of the internal dummy wiring layer 6b during firing.

  Further, the dummy via 2b is not only formed in the vicinity of the connection via 2a, but preferably, the dummy via 2b has a substantially same density when the probe card wiring board 3 is viewed from above, as in the example shown in FIG. If formed on the outer periphery of the probe card wiring board, the shrinkage of the conductor paste used in the via 2 and the internal wiring layer 6 during firing is slightly different from the shrinkage of the insulating layer 1c. This is preferable because deformation of the substrate hardly occurs.

  In the example shown in FIGS. 9A and 9B, the probe card wiring board 3 according to the present embodiment is a first region provided with a plurality of connection vias 2a in the cross section of the surface layer portion 1a. 7a has a polygonal shape, and the first region 7a is surrounded by a second region 7b provided with a plurality of dummy vias 2b. Since the probe card wiring board 3 according to the present embodiment includes such a configuration, a corner portion of the first region in which a plurality of connection vias are provided due to a difference in thermal behavior between the vias and the insulating base. The stress that tends to concentrate on the probe card can be relaxed so that deformation and cracks are less likely to occur in the probe card wiring board, and the thermal conductivity of the probe card wiring board 3 increases and the temperature rise / fall time is increased. Is also shortened.

  In the example shown in FIGS. 9A and 9B, the probe card wiring board 3 according to the present embodiment includes a plurality of dummy vias 2b for the insulating base 1 in the second region 7b in the cross section of the surface layer portion 1a. Is equal to the area ratio of the plurality of connection vias 2a to the insulating base 1 in the first region 7a. Since the probe card wiring board 3 according to the present embodiment includes such a configuration, stress concentration can be more effectively mitigated, and deformation and cracks are less likely to occur in the probe card wiring board. In addition, the thermal conductivity of the probe card wiring board 3 is increased, and the temperature rise / fall time is further shortened.

In the example shown in FIGS. 9A and 9B, in the probe card wiring board 3 according to the present embodiment, the second region 7b surrounds the first region 7a in the cross section of the surface layer portion 1a. The third region 7c has a circular third region 7c and a fourth region 7d surrounding the third region 7c.
The area ratio of the plurality of dummy vias 2b to the insulating base 1 in c is equal to the area ratio of the plurality of connection vias 2a to the insulating base 1 in the first region 7a, and the plurality of the vias to the insulating base 1 in the fourth region 7d. The area ratio of the dummy vias 2b is smaller than the area ratio of the plurality of dummy vias 2b to the insulating base 1 in the third region 7c. Since the probe card wiring board 3 according to the present embodiment includes such a configuration, a via including a plurality of connection vias and a plurality of dummy vias is circular in the first region and the third region. Since the area ratio of the via to the insulating substrate is the same, the stress that is likely to be generated due to the difference in thermal behavior between the via and the insulating substrate is more effectively relieved, and the first region and the third region are seen in plan view. As the area ratio of the via to the insulating base is gradually reduced from the region to the outside, the stress that tends to occur due to the difference in thermal behavior between the via and the insulating base can be dispersed, and the stress concentration can be reduced more effectively. In the probe card wiring board, deformation and cracks are less likely to occur. In addition, the thermal conductivity of the probe card wiring board 3 is increased, and the temperature rise / fall time is further shortened.

  In a region where the connection via 2a of the probe card wiring board 3 is not formed in plan view, a dummy via 2b is formed at the outer peripheral end of the probe card wiring board 3 as shown in FIG. 9A. When the dummy via 2b is formed on the entire surface as in the example shown in FIGS. 1A and 9B, compared to the case where there is an unformed region, the heat conduction of the probe card wiring board 3 is as follows. The rate is high, and the probe card wiring board 3 is preferable because the temperature variation tends to be small in a short time.

  In the example shown in FIGS. 9A and 9B, a plan view of the upper surface of the probe card wiring board 3 is shown. Similarly, the first surface in which a plurality of connection vias are provided on the lower surface. Such a structure is preferable because the area is polygonal and the first area is surrounded by the second area provided with a plurality of dummy vias.

  The probe card according to the present embodiment includes the probe card wiring board 3 having the above-described configuration and a plurality of probes electrically connected to the plurality of connection vias 2a. Even if heat is applied to the substrate 3 or cooled from the outside, a steady temperature distribution is achieved in a shorter time than when the dummy via 2b is not provided, so that the time required for the burn-in test is reduced. .

  For example, the probe is manufactured as follows and connected to the probe card wiring board 3 of the present invention. First, a female die of a plurality of probes is formed on one surface of a silicon wafer by etching. Next, a metal made of nickel is applied to the surface on which the female mold is formed by plating, and the female mold is embedded with nickel, and nickel on the wafer other than the embedded portion is removed by processing such as etching. Then, a silicon wafer having a nickel probe embedded therein is produced. A nickel probe embedded in the silicon wafer is bonded to a land 4 on the upper part of the probe card wiring board 3 with a bonding material such as solder. Then, by removing the silicon wafer with an aqueous potassium hydroxide solution, a probe card in which the probe is connected to the land 4 on the upper part of the probe card wiring board 3 is obtained.

DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 1a ... Surface layer part 1b ... Inner layer part 1c ... Insulation layer 2 ... Via 2a ... Connection via 2b ... Dummy via 3... Probe card wiring board 4... Land 6... Internal wiring layer 6 a... Internal connection wiring layer 6 b... Internal dummy wiring layer 7 a. First region 7b ... Second region 7c ... Third region 7d ... Fourth region

Claims (5)

An insulating substrate made of ceramics and having a surface layer portion and an inner layer portion;
A plurality of connection vias provided in the surface layer part and the inner layer part, and vias including a plurality of dummy vias provided in the surface layer part,
An area ratio of the plurality of vias to the insulating base in the cross section of the surface layer portion is higher than an area ratio of the plurality of vias to the insulating base in the cross section of the inner layer portion. .   In a cross section of the surface layer portion, the first region provided with the plurality of connection vias is a polygonal shape, and the first region is surrounded by the second region provided with the plurality of dummy vias. The wiring board for a probe card according to claim 1, wherein   The area ratio of the plurality of dummy vias to the insulating base in the second region is equal to the area ratio of the plurality of connection vias to the insulating base in the first region. The wiring board for probe cards described in 1. The second region has a circular third region surrounding the first region and a fourth region surrounding the third region;
An area ratio of the plurality of dummy vias to the insulating base in the third region is equal to an area ratio of the plurality of connection vias to the insulating base in the first region;
3. The probe according to claim 2, wherein an area ratio of the plurality of dummy vias to the insulating base in the fourth region is smaller than an area ratio of the plurality of dummy vias to the insulating base in the third region. Card wiring board. The probe card wiring board according to claim 1;
A probe card comprising: a plurality of probes electrically connected to the plurality of connection vias.

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