JP2013074016A - Processing method and processing apparatus of substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus of a substrate which improves the throughput of the substrate processing and improves the adhesiveness between the substrate and a coating film.SOLUTION: A wafer processing method is used for an imprint process where a transfer surface of a template, which is provided with an irregular pattern, is transferred on a coating film formed on at least a part of a surface of an adhesion film formed on a surface of a wafer W. The wafer processing method includes: a supply process where an adhesive is supplied on the surface of the wafer while the wafer is rotated (Step S-5); and a removal process where a gas is supplied onto the surface of the wafer to remove the excessive adhesive while the wafer is rotated (Step S-7).

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus used for imprint processing.

  2. Description of the Related Art In recent years, attention has been focused on an imprint technique capable of forming a fine resist pattern on the surface of a substrate such as a semiconductor wafer or an LCD substrate in a manufacturing process of a semiconductor wafer or the like.

  As one of the imprint techniques, for example, a photocurable resist solution is applied to a wafer to form a resist film, and a template transfer surface on which a release agent is formed is pressed against the resist film. In this state, a resist film is irradiated with light from the template side to cure the resist film, and then the template is separated from the resist film to form a resist pattern (for example, Patent Document 1).

  In this imprint technique, when the template is pulled away from the resist film, the cured resist film may adhere to the template and cause a pattern defect. On the other hand, as a method for preventing the resist film from adhering to the template, a method for improving the adhesion between the substrate and the resist film is known. For example, it is known that an intermediate layer made of a silane coupling agent is formed on the surface of a substrate by a spin coating method, and a resist film is formed on the surface of the intermediate layer to improve the adhesion between the substrate and the resist film. (For example, Patent Document 2).

JP 2011-805 A Japanese Patent No. 4467611

  However, in the thing of patent document 2, since an intermediate | middle layer is formed with the monomolecular layer in which the silane coupling agent molecule | numerator couple | bonded with the surface of the board | substrate, it is formed in the silane cup which is not couple | bonded with the surface of a board | substrate. The ring agent becomes redundant. Since it takes time to spin off and remove this excess silane coupling agent by spinning the substrate, there is a concern that the throughput of the substrate processing may be reduced. Moreover, in the said method, there exists a possibility that the coverage with the silane coupling agent on the surface of a board | substrate is low, and cannot fully contact | adhere a board | substrate and a resist film.

  The present invention has been made in view of the above circumstances, and provides a substrate processing method and a substrate processing apparatus capable of improving the substrate processing throughput and improving the adhesion between the substrate and the coating film. Objective.

  In order to solve the above problems, a substrate processing method of the present invention includes a transfer surface provided with a concavo-convex pattern on a coating film formed on at least a part of a surface of an adhesion film formed on the surface of the substrate. A substrate processing method for imprint processing for transferring the transfer surface of a template, comprising: supplying a contact agent to the surface of the substrate while rotating the substrate; rotating the substrate; And a removal step of removing excess surplus adhesive by supplying a gas to the surface of the substrate (claim 1).

  In the present invention, in the supplying step, the mist of the adhesive may be supplied to the surface of the substrate.

  In the supplying step, it is preferable to supply the adhesive obtained by mixing water on the surface of the substrate.

  In the removing step, after the gas is supplied from the gas supply nozzle to the central portion of the substrate, the gas supply nozzle is moved from the central portion of the substrate to the peripheral portion, and the surface of the substrate is transferred from the gas supply nozzle. It is more preferable to supply gas to (Claim 4).

  In the removing step, it is preferable to supply a gas containing water vapor to the surface of the substrate.

  In addition, it is preferable that the supplying step and the removing step are performed in a humidified atmosphere.

  In addition, it is preferable to further include a step of supplying water vapor to the surface of the substrate before the supplying step.

  In addition, it is preferable to include a heating step of heating the substrate to a predetermined temperature and chemically bonding the adhesive to the surface of the substrate to form an adhesive film after the removing step. Furthermore, it is preferable to provide a cooling step for cooling the substrate to a predetermined temperature after the heating step.

  Further, it is preferable to further include a cleaning step of supplying a cleaning liquid to the substrate and cleaning it after the removing step.

  Further, it is preferable to further comprise a step of forming a hydroxyl group on the surface of the substrate by subjecting the surface of the substrate to ultraviolet treatment before the supplying step.

  Moreover, it is preferable that the adhesion agent is a silane coupling agent.

  The substrate processing apparatus according to the present invention embodies the substrate processing method according to claim 1, wherein the concavo-convex pattern is formed on the coating film formed on at least a part of the adhesion film formed on the surface of the substrate. A substrate processing apparatus for imprint processing for transferring the transfer surface of a template provided with a transfer surface provided with an adhesive, supplying an adhesive to the surface of the substrate while rotating the substrate, and the substrate A coating unit that supplies gas to the surface of the substrate and removes the excess adhesive, and the coating unit includes a substrate holding unit that holds the substrate horizontally, and the substrate holding unit around the vertical axis. A rotation drive mechanism that rotates the substrate, a contact agent supply nozzle that supplies the contact agent to the surface of the substrate held by the substrate holder, and a gas supplied to the surface of the substrate held by the substrate holder. A gas supply nozzle that controls the supply of the adhesion agent from the adhesion agent supply nozzle to the substrate, the supply of gas from the gas supply nozzle to the substrate, and the rotation drive mechanism, Based on the control signal from the control unit, the substrate is rotated, the adhesive agent is supplied from the adhesive agent supply nozzle to the surface of the substrate, and then the substrate is rotated from the gas supply nozzle to the substrate. A gas is supplied to the surface of the substrate to remove excess adhesive agent (claim 13).

  In the present invention, the adhesive agent mist may be supplied from the adhesive agent supply nozzle to the surface of the substrate.

  In addition, it is preferable to supply the adhesion agent in which water is mixed on the surface of the substrate from the adhesion agent supply nozzle.

  The gas supply nozzle can be moved in a direction along the surface of the substrate, and further includes a gas supply nozzle moving mechanism whose movement operation is controlled by the control unit. The control unit includes the gas supply nozzle. It is preferable to supply the gas from the gas supply nozzle to the substrate while moving the gas supply nozzle from the central portion to the peripheral portion of the substrate after supplying the gas to the center portion of the substrate. ).

  Further, it is preferable to supply a gas containing water vapor to the surface of the substrate from the gas supply nozzle.

  Further, it is preferable to further comprise a humidifying unit capable of forming the inside of the coating unit in a humidified atmosphere (claim 18).

  In addition, the controller supplies a gas containing water vapor from the gas supply nozzle to the surface of the substrate while rotating the substrate before supplying the adhesive to the surface of the substrate from the adhesive supply nozzle. (Claim 19).

  Further, it is preferable to further comprise a heating unit that heats the substrate processed in the coating unit and chemically bonds the adhesive to the surface of the substrate to form an adhesive film (claim 20). It is preferable to provide a cooling unit that cools the substrate processed in the heating unit to a predetermined temperature (claim 21).

  Further, it is preferable to further include a cleaning unit for supplying a cleaning liquid to the substrate processed in the coating unit and cleaning the substrate (claim 22).

  In addition, it is preferable that the coating unit further includes an ultraviolet irradiation unit that forms a hydroxyl group on the surface of the substrate by performing ultraviolet treatment on the surface of the substrate before treatment (claim 23).

  Further, the adhesive is preferably a silane coupling agent (claim 24).

  According to invention of Claim 1, 13, an excess contact | adherence agent can be rapidly removed by spraying gas on the contact | adherence agent supplied to the surface of the board | substrate. Moreover, the chemical bond between the surface of the substrate and the adhesive can be promoted, and the coverage of the surface of the substrate with the adhesive can be improved.

  According to invention of Claim 2, 14, each molecule | numerator which comprises adhesive agent can adjoin with gas. For this reason, for example, the water molecule contained in the gas can promote hydrolysis of the adhesion agent in which a functional group rich in reactivity is formed by hydrolysis.

  According to the invention described in claims 3, 5, 7, 15, 17, and 19, for example, hydrolysis of the adhesive that forms a functional group rich in reactivity by hydrolysis is promoted, and the surface of the substrate is reactive. It is possible to supply an adhesion agent having a functional group rich in.

  According to invention of Claim 4, 16, since the gas from a perpendicular direction can be sprayed on the whole surface of a board | substrate, while being able to remove an excess contact | adherence agent rapidly, it adheres to the surface of a board | substrate. The chemical bond of the agent can be promoted to improve the coverage with the adhesion film on the surface of the substrate.

  According to invention of Claim 6, 18, the hydrolysis of the contact | adherence agent in which the functional group rich in reactivity is formed by hydrolysis can be accelerated | stimulated, for example with the water molecule contained in atmosphere.

  According to the eighth, ninth, twenty-first, and twenty-first aspects of the present invention, for example, dehydration condensation can be caused by heating, and the adhesion agent and the substrate can be adhered firmly and quickly.

  According to the invention described in claims 10 and 22, the surface of the substrate can be washed to remove particles and the like.

  According to the inventions of claims 11 and 23, since a hydroxyl group rich in reactivity can be formed on the surface of the substrate, for example, chemical bonding with the adhesive can be promoted.

  According to invention of Claim 12, 24, the hydrolyzable group of a silane coupling agent can form the hydroxyl group which is a functional group rich in reactivity by hydrolysis. In the silane coupling agent, the hydroxyl group formed by hydrolysis causes dehydration condensation with the hydroxyl group formed on the surface of the substrate, so that the silane coupling agent and the substrate can be firmly bonded by a covalent bond. The reactive functional group of the silane coupling agent can be firmly bonded to a coating film such as a resist film. Therefore, the adhesion film formed by the silane coupling agent can firmly adhere the substrate and the coating film.

  According to the substrate processing method and the substrate processing apparatus of the present invention, excess adhesive can be quickly removed by blowing gas onto the adhesive supplied to the surface of the substrate, so that the throughput of the substrate processing can be reduced. Can be improved. In addition, by blowing gas to the adhesive agent supplied to the surface of the substrate, the chemical bond between the substrate surface and the adhesive agent can be promoted, and the coverage of the substrate surface with the adhesive agent can be improved. The adhesion between the substrate and the coating film can be improved.

1 is a schematic plan view showing a substrate processing apparatus according to the present invention. 1 is a schematic right side view showing a substrate processing apparatus according to the present invention. It is a schematic left view which shows the substrate processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows the coating unit in 1st Embodiment. It is a schematic plan view which shows the coating unit in 1st Embodiment. It is a flowchart which shows the procedure of the substrate processing which concerns on 1st Embodiment. It is a figure which shows the aspect of the chemical bond of the silane coupling agent used as an adhesive agent, and a board | substrate. It is a figure which shows the relationship between the film thickness of the silane coupling agent used as an adhesive agent, and spin time. It is a schematic sectional drawing which shows the principal part of the coating unit in 2nd Embodiment. It is a flowchart which shows the procedure of the substrate processing which concerns on 2nd Embodiment. It is a schematic sectional drawing which shows the principal part of the coating unit in 3rd Embodiment. It is a schematic side view which shows the substrate processing apparatus which concerns on 4th Embodiment. It is a schematic sectional drawing which shows the principal part of the coating unit in 5th Embodiment. 1 is a schematic plan view showing an imprint system including a substrate processing apparatus according to the present invention. 1 is a schematic side view showing an imprint system including a substrate processing apparatus according to the present invention. It is a schematic sectional drawing which shows the imprint unit in the said imprint system. It is a schematic plan view which shows arrangement | positioning of the transfer position of the template in the surface of a board | substrate. FIGS. 9A, 9B, and 9C are time-series diagrams showing the state of a template and a substrate in imprint processing. It is a schematic side view which shows another imprint system. It is a schematic plan view which shows another imprint system. It is the figure shown about the aspect of the template process in another imprint system.

<First Embodiment>
Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings.

  The substrate processing apparatus includes a wafer carrier station 10 for loading and unloading a plurality of, for example, 25, semiconductor wafers W (hereinafter referred to as wafers W), which are substrates, and a wafer carrier station 10 for loading and unloading the wafer carrier 1. The main part is composed of a wafer processing station 20 that performs an adhesive supply process or the like on the wafer W.

  The wafer carrier station 10 includes a placement unit 2 on which a plurality of wafer carriers 1 can be placed side by side, an opening / closing unit (not shown) provided on a front wall as viewed from the placement unit 2, and an opening / closing unit. A transfer mechanism 3 for taking out the wafer W from the wafer carrier 1 is provided. The transfer mechanism 3 is arranged in the horizontal X and Y directions so as to transfer the wafer W between the wafer carrier 1 and a transfer unit (TRS1) belonging to a multistage unit G3 on the wafer processing station 20 described later. It is configured to be movable in the vertical Z direction and to be rotatable about the vertical axis.

  A wafer processing station 20 surrounded by a casing 27 is connected to the back side of the wafer carrier station 10, and the wafer processing station 20 has a vertical movement mechanism 22 at the center as shown in FIG. Thus, a vertically movable transport mechanism 21 is provided, and all processing units are disposed in the multistage blocks G1, G2, G3, G4 disposed around the transport mechanism 21. The transfer mechanism 21 is movable in the horizontal X, Y and vertical Z directions so as to transfer the wafer W between the processing units belonging to the multistage blocks G1, G2, G3, and G4. It is configured to be freely rotatable around it. In this case, the multistage blocks G1 and G2 are arranged in parallel on the right side surface, the multistage block G3 is disposed adjacent to the wafer carrier station 10, and the multistage block G4 is disposed adjacent to the back side.

  In this case, as shown in FIG. 2, in the multistage unit G1 and the multistage unit G2, a coating unit (COT) that supplies an adhesive to the surface of the wafer W and supplies gas to the surface of the wafer W to remove the adhesive. ) Are stacked in two steps from the bottom in the vertical direction.

  As shown in FIG. 3, in the multistage unit G3, for example, a heating unit (HP) that heats a wafer W processed in a coating unit (COT) and chemically bonds an adhesive to the surface of the wafer W to form an adhesive film. ), A cooling unit (COL) for cooling the wafer W processed in the heating unit (HP) to a predetermined temperature, a transfer unit (TRS1) for transferring the wafer W to and from the transfer mechanisms 3 and 21, and a wafer W Cleaning units (RINSE) for supplying and cleaning the cleaning liquid are stacked, for example, in seven stages in the vertical direction.

  In the multi-stage unit G4, an ultraviolet irradiation unit (formation of a hydroxyl group on the surface of the wafer W by ultraviolet treatment of the surface of the wafer W before processing in the heating unit (HP), cooling unit (COL), coating unit (COT)). UV) and cleaning units (RINSE) are stacked, for example, in seven stages in the vertical direction.

  Next, the coating unit (COT) in this invention will be described. As shown in FIGS. 4 and 5, the coating unit (COT) includes a substrate holding unit that sucks and holds the center portion on the back side of the wafer W in a housing 31 having a loading / unloading port 31a for the wafer W and holds it horizontally. A spin chuck 40 is provided. A shutter 31b is disposed at the loading / unloading port 31a so as to be openable and closable.

  The spin chuck 40 is connected to a rotation drive mechanism 42 such as a servo motor via a shaft 41, and is configured to be rotatable while the wafer W is held by the rotation drive mechanism 42. The rotational drive mechanism 42 is electrically connected to the controller 7 which is a control unit in the present invention, and the rotational speed of the spin chuck 40 is controlled based on a control signal from the controller 7. .

  A cup 43 is provided so as to surround the side of the wafer W held by the spin chuck 40. The cup 43 includes a cylindrical outer cup 43a and a cylindrical inner cup 43b whose upper side is inclined inward, and the outer cup 43a is connected to the lower end of the outer cup 43a by an elevating mechanism 44 such as a cylinder. The inner cup 43b is configured to be moved up and down by being pushed up by a step formed on the inner peripheral surface of the lower end side of the outer cup 43a. The elevating mechanism 44 is electrically connected to the controller 7, and is configured such that the outer cup 43 a elevates based on a control signal from the controller 7.

  A circular plate 45 is provided on the lower side of the spin chuck 40, and a liquid receiving portion 46 whose cross section is formed in a concave shape is provided around the entire circumference of the circular plate 45. A drain discharge port 47 is formed on the bottom surface of the liquid receiving portion 46, and the adhesive agent that has fallen from the wafer W or shaken off and stored in the liquid receiving portion 46 passes through the drain discharge port 47. It is discharged outside. A ring member 48 having a mountain cross section is provided outside the circular plate 45. Although not shown, elevating pins that are, for example, three substrate support pins penetrating the circular plate 45 are provided, and the wafer W is attached to the spin chuck 40 by the cooperative action of the elevating pins and a transfer mechanism (not shown). It is configured to be delivered to.

  On the other hand, on the upper side of the wafer W held by the spin chuck 40, an adhesive supply nozzle 52 (hereinafter referred to as “adhesion”) that can be moved up and down and horizontally moved so as to face the center of the surface of the wafer W through a gap. And a gas supply nozzle (hereinafter referred to as a gas nozzle 53) for supplying gas to the surface of the wafer W, which is integrated in parallel and adjacent to the wafer center side of the adhesive nozzle 52. Yes. In this case, the adhesive agent nozzle 52 and the gas nozzle 53 have a circular discharge port (not shown) that supplies (discharges) the adhesive or gas to the nozzle tip.

  As shown in FIG. 5, the adhesive nozzle 52 and the gas nozzle 53 that are integrated in a state of being adjacent to each other as described above are supported on one end side of the nozzle arm 54A, and the other end side of the nozzle arm 54A. Is connected to a moving base 55A provided with a lifting mechanism (not shown). Further, the moving base 55A extends along a guide member 57A extending in the X direction by a nozzle moving mechanism 56A constituted by, for example, a ball screw or a timing belt. And can be moved in the horizontal direction. In this case, the nozzle moving mechanism 56A is the gas supply nozzle moving mechanism in the present invention. By driving the nozzle moving mechanism 56 </ b> A, the adhesive agent nozzle 52 and the gas nozzle 53 can move along a straight line (radius) from the center of the wafer W toward the outer periphery.

  Note that a standby portion 59A of the adhesive agent nozzle 52 and the gas nozzle 53 is provided on one outer side of the cup 43, and the nozzle tip of the adhesive agent nozzle 52 is cleaned by this standby portion 59A. .

  As shown in FIG. 4, the adhesive agent nozzle 52 is connected to an adhesive agent supply source 61 via an adhesive agent supply pipe 60 provided with a pump P1. The gas nozzle 53 is connected to a gas supply source 71 via a gas supply pipe 70 provided with an on-off valve V0. In this case, on the secondary side of the on-off valve V0 of the gas supply pipe 70, a gas temperature adjusting unit 72 configured by, for example, a heater capable of adjusting the temperature of the gas to a predetermined temperature is provided.

  The nozzle moving mechanism 56A, the pump P1, the on-off valve V0, and the gas temperature adjusting unit 72 are each electrically connected to the controller 7, and based on a control program stored in advance in the controller 7, the adhesion agent nozzle 52 and The gas nozzle 53 is horizontally moved, the on-off valve V0 is opened and closed, and the pump P1 is driven. The controller 7 can control the supply of gas from the gas nozzle 53 to the surface of the wafer W by controlling the opening / closing drive of the opening / closing valve V0.

  As the adhesion agent supplied to the wafer W, a silane coupling agent is used. As shown in FIG. 7, the hydrolyzable group (OR) of the silane coupling agent can form a hydroxyl group which is a functional group rich in reactivity by hydrolysis. In the silane coupling agent, the hydroxyl group formed by hydrolysis causes dehydration condensation with the hydroxyl group formed on the surface of the wafer W, so that the silane coupling agent and the wafer W can be firmly bonded by a covalent bond. Moreover, the reactive functional group (α) of the silane coupling agent can be firmly bonded to a coating film such as a resist film. Therefore, the adhesion film formed by the silane coupling agent can firmly adhere the wafer W and the coating film. In this case, the adhesive agent supply source 61 stores a solution in which the viscosity is reduced by adding an organic solvent such as methanol to the silane coupling agent. The silane coupling agent stored in the adhesive supply source 61 may store the stock solution without being diluted with a solvent such as an organic solvent.

  Further, as a gas supplied to the wafer W, N 2 gas which is an inert gas is used. The N 2 gas is heated to, for example, 100 ° C. by a gas temperature adjusting unit 72 provided in the gas supply pipe 70 and then supplied to the wafer W from the gas nozzle 53. By comprising in this way, the dehydration condensation between the hydroxyl groups of adjacent silane coupling agents, and the dehydration condensation of the hydroxyl groups formed on the silane coupling agent and the hydroxyl groups formed on the wafer W can be promoted. Yes (see FIG. 7).

  Next, processing of the wafer W by the substrate processing apparatus configured as described above will be described. FIG. 6 is a flowchart showing the procedure of the substrate processing method in the substrate processing apparatus according to the first embodiment, and the step proceeds in the direction of the arrow.

  When the wafer carrier 1 containing 25 wafers W is mounted on the mounting table 2, the wafer W is taken out from the wafer carrier 1 by the transport mechanism 3. Then, the wafer W is transferred to the transfer mechanism 21 via a transfer unit (TRS1) that forms one stage of the multi-stage unit G3. First, the transport mechanism 21 carries the wafer W into the ultraviolet irradiation unit (UV). The wafer W transferred to the ultraviolet irradiation unit (UV) is subjected to ultraviolet treatment on the surface of the wafer W by an ultraviolet irradiation means (not shown), and a hydroxyl group is formed on the surface of the wafer W (step S-1).

  Next, the wafer W is carried into the coating unit (COT) by the transport mechanism 21 (step S-2). The wafer W carried into the coating unit (COT) is transferred onto the spin chuck 40 by a transfer mechanism (not shown) and is held by the spin chuck 40. The controller 7 rotates the wafer W by driving the rotation drive mechanism 42 (step S-3), and also drives the nozzle moving mechanism 56A to move the adhesive agent nozzle 52 from the peripheral edge of the wafer W to a position above the center. (Step S-4).

  Next, while rotating the wafer W, the adhesive agent is supplied (discharged) from the adhesive agent nozzle 52 to the center of the wafer W (step S-5: supply process), and the adhesive agent liquid film is formed on the surface of the wafer W. Is formed. In this case, the hydrolyzable group of the silane coupling agent, which is an adhesion agent, can be hydrolyzed by water molecules contained in the air to form a hydroxyl group that is a functional group rich in reactivity.

  Next, the controller 7 drives the nozzle moving mechanism 56A to move the gas nozzle 53 to a position above the center of the wafer W (step S-6). Next, while rotating the wafer W, N 2 gas is supplied from the gas nozzle 53 to the center of the wafer W (step S-7: removal process). By comprising in this way, surplus adhesive agent can be rapidly removed by spraying N2 gas on the adhesive agent supplied to the surface of the wafer W. FIG. In addition, by spraying N2 gas, the liquid film of the silane coupling agent, which is an adhesion agent, is thinned to promote hydrolysis, and the contact opportunity between the hydroxyl group of the hydrolyzed silane coupling agent and the hydroxyl group of the wafer W is increased. Thus, chemical bonding between the surface of the wafer W and the silane coupling agent can be promoted, and the coverage of the surface of the wafer W with the silane coupling agent can be improved.

  Next, N2 gas is supplied from the gas nozzle 53 to the surface of the wafer W while the wafer W is rotated and the gas nozzle 53 is moved from the central portion to the peripheral portion of the wafer W (step S-8: removal process). With this configuration, N2 gas can be sprayed from the vertical direction over the entire surface of the wafer W, so that excess adhesive can be quickly removed. In addition, by spraying N2 gas from the vertical direction on the entire surface of the wafer W, the liquid film of the silane coupling agent, which is an adhesion agent, is thinned to promote hydrolysis, and the hydrolyzed silane coupling agent By increasing the contact opportunity between the hydroxyl group and the hydroxyl group of the wafer W, the chemical bonding between the surface of the wafer W and the silane coupling agent is promoted, and the coverage of the surface of the wafer W with the silane coupling agent can be improved.

  Next, the wafer W is unloaded from the coating unit (COT) by the transfer mechanism 21 (step S-9), and then loaded into the heating unit (HP). The wafer W is heated in a heating unit (HP) at a predetermined temperature, for example, 150 ° C., and an adhesive is chemically bonded to the surface of the wafer W to form an adhesive film C (step S-10: Heating step). The wafer W processed in the heating unit (HP) is transferred to the cooling unit (COL) by the transfer mechanism 21 and cooled to a predetermined temperature, for example, 23 ° C. (step S-11: cooling step).

  As shown in FIG. 7, on the surface of the wafer W before the heat treatment, a hydroxyl group formed by hydrolyzing a hydrolyzable group of a silane coupling agent as an adhesion agent, and formed on the surface of the wafer W The hydroxyl groups formed are bonded by hydrogen bonds. Thereafter, by heat-treating the wafer W, the hydroxyl group formed by hydrolysis causes dehydration condensation with the hydroxyl group formed on the surface of the wafer W, so that the silane coupling agent and the wafer W become It can be firmly bonded by covalent bond. On the other hand, on the surface side of the adhesion film C, the reactive functional group (α) of the silane coupling agent is disposed.

  Next, the wafer W cooled in the cooling unit (COL) is transferred to the cleaning unit (RINSE) by the transfer mechanism 21, and the controller 7 uses a rinse nozzle (not shown) while rotating the wafer W by a rotation drive mechanism (not shown). A cleaning liquid is supplied to the surface of the wafer for cleaning (step S-12: cleaning process). Next, a spin drying process is performed in which the wafer W is rotated at a high speed by driving the rotation driving mechanism to shake off the cleaning liquid on the surface of the wafer W (step S-13). With this configuration, the surface of the wafer W can be cleaned to remove particles and the like. Thereafter, the wafer W is loaded into the transfer unit (TRS1) by the transfer mechanism 21 and stored in the wafer carrier 1 by the transfer mechanism 3.

  According to the substrate processing method and the substrate processing apparatus according to the first embodiment described above, surplus silane coupling agent is obtained by spraying N2 gas onto the silane coupling agent that is an adhesive supplied to the surface of the wafer W. Can be removed quickly, so that the throughput of substrate processing can be improved. Further, by blowing a gas to the silane coupling agent supplied to the surface of the wafer W, chemical bonding between the surface of the wafer W and the silane coupling agent is promoted, and the surface of the wafer W is coated with the silane coupling agent. Since the rate can be improved, the adhesion between the wafer W and the coating film C can be improved.

  FIG. 8 is a graph showing the relationship between the film thickness and the spin time in the conventional method of removing the excess silane coupling agent by spinning the wafer W and the method of removing the silane coupling agent according to the present invention.

  In the conventional method of removing the surplus silane coupling agent by spinning the wafer W, a silane coupling agent (organosilane) is supplied to the surface of the wafer W to form a liquid film, and then the wafer W is rotated at a rotational speed. Rotate at 1500 rpm to remove excess silane coupling only by shaking off (processing condition 1). On the other hand, in the method of removing the silane coupling agent according to the present invention, a wafer rotating on the surface of the wafer W after supplying a silane coupling agent (organosilane) to form a liquid film and rotating at 1500 rpm. After supplying N 2 gas to the center of the wafer W from the gas nozzle 53 at a supply rate of 5 l / min, the gas nozzle 53 is moved from the center of the wafer W to the peripheral portion at a scanning speed of 10 mm / sec. Meanwhile, excess silane coupling is removed by supplying N 2 gas from the gas nozzle 53 to the surface of the wafer W at a supply rate of 5 l / min (processing condition 2). In FIG. 8, the experimental result of the processing condition 1 is indicated by a one-dot chain line, and the experimental result of the processing condition 2 is indicated by a solid line.

  As shown in FIG. 8, in the treatment condition 1, the spin time until the liquid film reaches the film thickness h of the monomolecular layer of the silane coupling agent is t2, whereas the treatment condition 2 is t1. From this result, it was found that the method for removing the silane coupling agent according to the present invention (treatment condition 2) can remove the excess silane coupling agent more quickly.

  Next, the wafer W from which the excess coupling agent has been removed under the processing conditions 1 and 2 is heat-treated (heating temperature: 150 ° C., heating time: 60 seconds) to form the adhesion film C, and the water of the adhesion film C An experiment was conducted to measure the contact angle. As a result, the average value of the water contact angle in the treatment condition 1 was 39 degrees, whereas the average value of the water contact angle in the treatment condition 2 was 49 degrees. As shown in FIG. 7, since the reactive functional group (α) having hydrophobicity of the silane coupling agent is disposed on the surface side of the adhesion film C, the coverage of the surface of the wafer W with the silane coupling agent is covered. The contact angle of water with the adhesion film C is proportional. From this result, it can be seen that the method of removing the silane coupling agent according to the present invention (processing condition 2) has a higher contact angle with water, so that the coverage of the surface of the wafer W with the silane coupling agent is higher. It was.

  In the first embodiment described above, when a hydroxyl group is formed on the surface of the wafer W before step S-1 by, for example, acid treatment using, for example, another apparatus, the surface of the wafer W is The step of forming a hydroxyl group on the surface of the wafer W by UV treatment, that is, step S-1 may be omitted.

Second Embodiment
In the first embodiment described above, the gas N2 gas is supplied from the gas nozzle 53, but a gas containing water vapor may be supplied. For example, as shown in FIG. 9, N 2 gas containing water vapor may be supplied from the gas nozzle 53. In this case, step S-5 in the first embodiment: a step of supplying water vapor to the surface of the wafer W may be provided before the supply step.

  As shown in FIG. 9, the substrate processing apparatus according to the second embodiment includes a gas supply pipe 70A that connects a gas nozzle 53 and a gas supply source 71 via an on-off valve V0, a gas supply pipe 70A, and a water vapor supply source. And a water vapor supply pipe 73 for connecting the water vapor generator 74 to the gas via a switching valve V1. In this case, the water vapor generator 74 is connected to a pure water supply source (not shown), and heats water supplied from the pure water supply source by a heater (not shown) to generate water vapor.

  The on-off valves V0 and V1 are electrically connected to the controller 7 so that the on-off valves V0 and V1 are opened and closed and the pump P1 is driven based on a control signal stored in the controller 7 in advance. It is configured. The controller 7 can control the supply of N2 gas including water vapor from the gas nozzle 53 to the surface of the wafer W by controlling the opening / closing driving of the on-off valves V0 and V1.

  In the second embodiment, other configurations are the same as those of the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

  Next, processing of the wafer W by the substrate processing apparatus according to the second embodiment configured as described above will be described. FIG. 10 is a flowchart showing the procedure of the substrate processing method in the substrate processing apparatus according to the second embodiment, in which steps progress in the direction of the arrow.

  The wafer W is taken out from the wafer carrier 1 by the transport mechanism 3 and transported to the ultraviolet irradiation unit (UV) as in the first embodiment. The surface of the wafer W transferred to the ultraviolet irradiation unit (UV) is subjected to ultraviolet treatment, and a hydroxyl group is formed on the surface of the wafer W (step S2-1).

  Next, the wafer W is carried into the coating unit (COT) by the transport mechanism 21 (step S2-2). The wafer W carried into the coating unit (COT) is transferred onto the spin chuck 40 and held by the spin chuck 40. The controller 7 rotates the wafer W by driving the rotation drive mechanism 42 (step S2-3) and drives the nozzle moving mechanism 56A to move the gas nozzle 53 from the peripheral edge of the wafer W to a position above the center. (Step S2-4).

  Next, while rotating the wafer W, N2 gas containing water vapor is supplied from the gas nozzle 53 to the center of the wafer W (step S2-5). With this configuration, water molecules can be arranged on the surface of the wafer W.

  Next, the nozzle moving mechanism 56A is driven to move the adhesive nozzle 52 to a position above the center of the wafer W (step S2-6).

  Next, the adhesive agent is supplied (discharged) from the adhesive agent nozzle 52 to the center of the wafer W while rotating the wafer W (step S2-7: supply step). On the surface of the wafer W, a liquid film of an adhesive is formed. In this case, the silane coupling agent that is an adhesion agent supplied to the surface of the wafer W is a functional group rich in reactivity due to hydrolysis with water molecules arranged on the surface of the wafer W in step S2-5. A hydroxyl group can be formed.

  Next, the controller 7 drives the nozzle moving mechanism 56A to move the gas nozzle 53 to a position above the center of the wafer W (step S2-8). Next, while rotating the wafer W, N2 gas containing water vapor is supplied from the gas nozzle 53 to the center of the wafer W (step S2-9: removal step). By comprising in this way, hydrolysis of the silane coupling agent which is an adhesion | attachment agent can be accelerated | stimulated with the water vapor | steam supplied from the gas nozzle 53. FIG. Further, by spraying N 2 gas containing water vapor onto the adhesive agent supplied to the surface of the wafer W, the excess adhesive agent can be quickly removed. In addition, by spraying N2 gas containing water vapor, the liquid film of the silane coupling agent, which is an adhesion agent, is thinned to promote hydrolysis, and the hydroxyl group of the hydrolyzed silane coupling agent contacts the hydroxyl group of the wafer W. The opportunity can be increased to promote chemical bonding between the surface of the wafer W and the silane coupling agent, and the coverage of the surface of the wafer W with the silane coupling agent can be improved.

  Next, while rotating the wafer W, the gas nozzle 53 is moved from the central portion to the peripheral portion of the wafer W, and N2 gas containing water vapor is supplied from the gas nozzle 53 to the surface of the wafer W (step S2-10: removal). Process). By comprising in this way, the water vapor | steam from a perpendicular direction can be sprayed on the whole surface of the wafer W, and the hydrolysis of the silane coupling agent which is an adhesion | attachment agent can be accelerated | stimulated. In addition, since N2 gas containing water vapor can be sprayed from the vertical direction to the entire surface of the wafer W, excess adhesive can be quickly removed. Further, by spraying N2 gas containing water vapor from the vertical direction over the entire surface of the wafer W, the liquid film of the silane coupling agent, which is an adhesive, is thinned to promote hydrolysis, and the hydrolyzed silane cup To increase the contact rate between the hydroxyl group of the ring agent and the hydroxyl group of the wafer W, promote chemical bonding between the surface of the wafer W and the silane coupling agent, and improve the coverage of the surface of the wafer W with the silane coupling agent. Can do.

  Next, as in the first embodiment, the wafer W is unloaded from the coating unit (COT) (step S2-11), is subjected to heat treatment (step S2-12: heating step), and is then subjected to cooling processing (step S2-11). S2-13: Cooling step), then cleaning process (step S2-14: cleaning process), then drying process (step S2-15), and then returned to wafer carrier 1.

  According to the substrate processing method and substrate processing apparatus in the second embodiment described above, in addition to the effects of the first embodiment, in steps S2-9 and S2-10: removal process, a gas containing water vapor is removed from the wafer W. Since it is supplied to the surface, hydrolysis of the silane coupling agent supplied to the surface of the wafer W can be promoted. For this reason, since the coupling | bonding of the wafer W and the silane coupling agent which is an adhesive agent can be accelerated | stimulated, the throughput of a substrate process can be improved further and the adhesiveness of the wafer W and the coating film C is improved. be able to.

  Step S2-7: Before the supplying step, a step of supplying water vapor to the surface of the wafer W (Step S2-5) is provided to hydrolyze the silane coupling agent supplied to the surface of the wafer W. Can be promoted. For this reason, since the coupling | bonding of the wafer W and the silane coupling agent which is an adhesive agent can be accelerated | stimulated, the throughput of a substrate process can be improved further and the adhesiveness of the wafer W and the coating film C is improved. be able to.

  In the second embodiment described above, step S2-7: before the supplying step, the gas nozzle 53 is moved from the peripheral edge of the wafer W to a position above the center, and the gas nozzle 53 moves to the center of the wafer W. Although the process of supplying N2 gas containing water vapor to the gas, that is, the process of step S2-4 and step S2-5, is performed, the process of step S2-4 and step S2-5 may be omitted.

  In the second embodiment described above, when the wafer W has a hydroxyl group formed on the surface of the wafer W before step S2-1 by, for example, acid treatment using another apparatus or the like, the surface of the wafer W is The step of forming a hydroxyl group on the surface of the wafer W, that is, step S2-1 may be omitted.

<Third Embodiment>
In the first embodiment described above, the silane coupling agent, which is an adhesive agent, is supplied from the adhesive agent nozzle 52 to the surface of the wafer W. However, an adhesive agent mixed with water may be supplied.

  In this case, the adhesive supply source 61 shown in FIG. 4 stores a silane coupling agent (hereinafter referred to as an aqueous solution of a silane coupling agent) that is an adhesive mixed with water. In this case, the concentration of the silane coupling agent is set to 1%, for example. Hydrolyzable groups of the silane coupling agent can form hydroxyl groups, which are functional groups rich in reactivity, by hydrolysis (see FIG. 7). For this reason, the silane coupling agent in the adhesion agent supply source 61 is in a state in which hydroxyl groups are formed by hydrolysis.

  In the third embodiment, other configurations are the same as those of the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

  According to the substrate processing method and the substrate processing apparatus in the third embodiment described above, in addition to the effects of the first embodiment, as shown by a two-dot chain line in FIG. By supplying an aqueous solution of a silane coupling agent to the surface of the wafer W, it is possible to supply a silane coupling agent in which hydroxyl groups that are functional groups rich in reactivity are formed by hydrolysis. For this reason, since the coupling | bonding of the wafer W and the silane coupling agent which is an adhesive agent can be accelerated | stimulated, the throughput of a substrate process can be improved further and the adhesiveness of the wafer W and the coating film C is improved. be able to.

  In the third embodiment described above, the aqueous solution of the silane coupling agent is stored in the adhesive agent supply source 61. However, the silane coupling agent that is water and the adhesive agent is mixed immediately before being supplied from the adhesive agent nozzle 52. May be.

  For example, as shown in FIG. 11, an adhesive agent supply pipe 60A for connecting an adhesive agent nozzle 52 and an adhesive agent supply source 61 via a pump P1, and an adhesive agent supply pipe 60A on the secondary side of the pump P1. A static mixer 62, and a pure water supply pipe 64 that connects the static mixer 62 and the pure water supply source 63 via a pump P2. The static mixer 62 stirs and mixes the silane coupling agent supplied from the adhesive supply source 61 and the pure water supplied from the pure water supply source 63.

  By supplying a silane coupling agent and pure water to the static mixer 62 and stirring and mixing, the silane coupling agent can be hydrolyzed to form a hydroxyl group that is a functional group rich in reactivity.

  As described above, the silane coupling agent and pure water are stirred and mixed immediately before the supply to the wafer W, so that the hydrolyzate of the silane coupling agent having low storage stability is immediately supplied from the adhesion agent nozzle 52. Can be generated.

  In the third embodiment described above, N2 gas is supplied from the gas nozzle 53 to the wafer W in steps S-7 and S-8: removal process, but N2 gas containing water vapor is supplied from the gas nozzle 53. May be. In this case, the substrate processing apparatus of the third embodiment may be further provided with the configuration shown in FIG.

  With this configuration, in addition to the effects of the third embodiment, Steps S-7 and S-8 are supplied to the surface of the wafer W in order to supply a gas containing water vapor to the surface of the wafer W in the removal step. Hydrolysis of the silane coupling agent formed can be promoted. For this reason, since the coupling | bonding of the wafer W and the silane coupling agent which is an adhesive agent can be accelerated | stimulated, the throughput of a substrate process can be improved further and the adhesiveness of the wafer W and the coating film C is improved. be able to.

<Fourth embodiment>
In 1st Embodiment mentioned above, although the silane coupling agent which is an adhesion | attachment agent formed the hydroxyl group which is a functional group rich in reactivity by hydrolysis with the water molecule | numerator in air, step S-5: supply process And Steps S-7 and S-8: The removal step may be performed in a humidified atmosphere to promote hydrolysis of the silane coupling agent that is an adhesive. For example, as shown in FIG. 12, a humidification unit (MOS) that can form a coating unit (COT) in a humidified atmosphere may be further provided.

  As shown in FIG. 12, in the substrate processing apparatus according to the fourth embodiment, a humidifying unit (MOS) that can form a humidified atmosphere in the coating unit (COT) is overlaid on the upper layer of the coating unit (COT). . The humidification unit (MOS) is connected to the coating unit (COT) through a pipe line (not shown), and the inside of the coating unit (COT) can be humidified with water vapor to maintain, for example, a temperature of 23 ° C. and a humidity of 60%.

  In addition, in 4th Embodiment, since another structure is the same as 1st Embodiment, the same code | symbol is attached | subjected to the same part and description is abbreviate | omitted.

  In the fourth embodiment, the inside of the coating unit (COT) is humidified with water vapor by a humidifying unit (MOS) and maintained at 60% humidity. Step S-5 in the first embodiment: supply process, step S -7, S-8: The removal step can be performed in a humidified atmosphere. For this reason, the silane coupling agent, which is an adhesion agent being supplied to the surface of the wafer W, and the silane coupling agent supplied to the surface of the wafer W are supplied from a humidifying unit (MOS) in addition to water molecules in the air. Hydrolysis with a water molecule can form a hydroxyl group which is a functional group rich in reactivity.

  According to the substrate processing method and the substrate processing apparatus in the fourth embodiment described above, in addition to the effects of the first embodiment, step S-5: supply step and steps S-7, S-8: removal step are humidified. Since it is performed in the atmosphere, hydrolysis of the silane coupling agent being supplied to the surface of the wafer W and the silane coupling agent supplied to the surface of the wafer W can be promoted. For this reason, since the coupling | bonding of the wafer W and the silane coupling agent which is an adhesive agent can be accelerated | stimulated, the throughput of a substrate process can be improved further and the adhesiveness of the wafer W and the coating film C is improved. be able to.

  The substrate processing apparatus according to the fourth embodiment described above includes the humidification unit (MOS) that can form the inside of the coating unit (COT) in a humidified atmosphere in the substrate processing apparatus according to the first embodiment. The substrate processing apparatus according to the second and third embodiments may include a humidification unit (MOS).

<Fifth Embodiment>
In the first embodiment described above, in the step S-5: supplying process, the liquid adhesive agent is supplied from the adhesive agent nozzle 52 to the center of the wafer W, but the mist of the adhesive agent is supplied to the surface of the wafer W. Also good. For example, as shown in FIG. 13, mist of the adhesive may be supplied from an adhesive supply nozzle (hereinafter, spray nozzle 52A).

  As shown in FIG. 13, the substrate processing apparatus according to the second embodiment includes a spray nozzle 52 </ b> A that supplies a mist-like adhesive to the surface of the wafer W held by the substrate holding unit. The spray nozzle 52A is connected to an adhesive agent supply source 61 via an adhesive agent supply pipe 60 provided with a pump P1. The spray nozzle 52 </ b> A can supply a solution containing a silane coupling agent that is an adhesive supplied from the adhesive supply source 61 to the surface of the wafer W in a mist form.

  In the fifth embodiment, other configurations are the same as those in the first embodiment, and thus the same parts are denoted by the same reference numerals and description thereof is omitted.

  According to the substrate processing method and the substrate processing apparatus in the fifth embodiment described above, in addition to the effects of the first embodiment, Step S-5: Silane coupling that is an adhesive on the surface of the wafer W in the supplying step. By supplying the mist of the agent, each molecule of the silane coupling agent, which is an adhesion agent, comes close to the gas, so that hydrolysis of the silane coupling agent can be promoted by water molecules contained in the gas. For this reason, since the coupling | bonding of the wafer W and the silane coupling agent which is an adhesive agent can be accelerated | stimulated, the throughput of a substrate process can be improved further and the adhesiveness of the wafer W and the coating film C is improved. be able to.

  In addition, although the substrate processing apparatus which concerns on 5th Embodiment mentioned above was provided with the spray nozzle 52A and supplied the mist of adhesive agent to the substrate processing apparatus which concerns on 1st Embodiment, the board | substrate which concerns on 2nd-4th embodiment. The processing apparatus may be provided with a spray nozzle 52A to supply an adhesive mist.

<Sixth Embodiment>
In the first embodiment described above, the substrate processing apparatus according to the present invention is a single apparatus, but the substrate processing apparatus according to the present invention is used in an imprint system as shown in FIGS. Can be applied.

  As shown in FIGS. 14 and 15, the imprint system includes a wafer carrier station 10 for carrying in and out a wafer carrier 1 for hermetically storing a plurality of, for example, 25 wafers W, and a wafer taken out from the wafer carrier station 10. An uneven pattern is provided on the wafer processing station 20A for performing an adhesive supply process or the like on W and a coating film (resist film R) formed on at least a part of the surface of the adhesive film C formed on the surface of the wafer W. The imprint station 80 that performs the imprint process for transferring the transfer surface Ma of the template M including the transfer surface Ma, and the transfer station that is connected between the processing station 20A and the imprint station 80 and transfers the wafer W. The main part is composed of 90.

  In this case, a wafer processing station 20A surrounded by a casing 27A is connected to the back side of the wafer carrier station 10, and the wafer processing station 20A has a vertical portion at the center as shown in FIG. A transport mechanism 21 that is vertically movable by a moving mechanism 22 is provided, and all processing units are disposed in multistage blocks G1, G2, G3, and G4A disposed around the transport mechanism 21. As shown in FIG. 15, the multistage block G4A includes a heating unit (HP), a cooling unit (COL), a delivery unit (TRS2) for delivering the wafer W to and from the transfer mechanism 21, and an ultraviolet irradiation unit (UV). The cleaning units (RINSE) are stacked in, for example, nine stages in the vertical direction.

  The transfer station 90 includes a transfer chamber 91 provided between the processing station 20A and the imprint station 80, and a transfer mechanism 92 having an arm is provided. Further, the transfer chamber 91 is provided with buffer units (BUF) for temporarily storing a plurality of, for example, 25 wafers W on both the left and right sides of the transfer mechanism 92.

  Further, the transfer mechanism 92 moves between the wafer W between the transfer unit (TRS2) belonging to the multistage block G4A on the wafer processing station 20A side and the transfer unit (TRS3) belonging to the multistage unit G5 on the imprint station 80 side described later. Are movable in the horizontal X and Y directions and the vertical Z direction, and are rotatable around the vertical axis.

  An imprint station 80 surrounded by a casing 81 is connected to the back side of the transfer station 90. As shown in FIG. 14, the imprint station 80 has a transfer area for the wafer W formed in the center, and a multistage block G5 and an imprint block N are arranged around the transfer area.

  As shown in FIG. 15, the multi-stage block G5 arranged adjacent to the transfer station 90 includes a transfer unit (TRS3) for transferring wafers W to and from the transfer mechanism 92, and a plurality of, for example, 25 wafers W. A buffer unit (BUF) for temporary storage is provided. In this case, as shown in FIG. 14, the buffer unit (BUF) is formed so as to be movable up and down for transferring the wafer W between the units stacked in the multistage block G5. A transport mechanism 82 is provided.

  A transfer mechanism 83 having an arm is provided in the transfer area of the wafer W formed at the center of the imprint station 80. The transfer mechanism 83 transfers the wafer W between a transfer unit (TRS3) belonging to the multistage unit G5 on the imprint station 80 side and a transfer unit (TRS4) belonging to the imprint block N described later. It is configured to be movable in the horizontal X and Y directions and the vertical Z direction and to be rotatable about the vertical axis.

  A template provided with a transfer surface Ma provided with a concavo-convex pattern on a resist film R formed on at least a part of the surface of the adhesion film C formed on the surface of the wafer W on both left and right sides toward the back of the transfer region. Five imprint blocks N that perform imprint processing for transferring the M transfer surface Ma are arranged in parallel.

  The imprint block N is capable of transporting the template M between a placement unit 85 capable of placing a template carrier 84 storing a plurality of, for example, 25 templates M, and the template carrier 84 and the delivery unit (TRS5). The transfer mechanism is mainly composed of a non-transfer mechanism, an imprint unit (NIL) that performs imprint processing, and a transfer unit (TRS4) that transfers the wafer W between the transfer mechanism 83.

  For example, as shown in FIG. 18A, the template M stored in the template carrier 84 has a rectangular parallelepiped shape, and includes a square transfer surface Ma provided with an uneven pattern. As a material of the template M, a transparent material that can transmit light such as visible light, near ultraviolet light, and ultraviolet light, for example, glass is used. Further, a release agent Q for accelerating the peeling of the resist film R and the template M is formed on the transfer surface Ma provided with the uneven pattern on the template M.

  As shown in FIG. 16, the imprint unit (NIL) is surrounded by a casing 100, and a loading / unloading port (not shown) for the template M is formed on the side surface of the casing 100 on the template carrier 84 side. A loading / unloading port (not shown) for the wafer W is formed on the side surface on the region side.

  A wafer holder 101 on which the wafer W is placed and held is provided on the bottom surface in the housing 100. The wafer W is placed on the upper surface of the wafer holder 101 so that the surface on which the adhesion film C is formed faces upward. In the wafer holding part 101, lifting pins 102 are provided for supporting the wafer W from below and lifting it. The elevating pin 102 can be moved up and down by the elevating drive unit 103. A through hole 104 that penetrates the upper surface in the thickness direction is formed on the upper surface of the wafer holding unit 101, and the elevating pins 102 are inserted through the through hole 104. Further, the wafer holding unit 101 can be moved in the horizontal direction and can be rotated about the vertical by a moving mechanism 105 provided below the wafer holding unit 101.

  On the other hand, a resist solution nozzle 106 that can be moved up and down and horizontally is provided above the wafer W held by the wafer holder 101 so as to face the surface of the wafer W with a gap. In this case, the resist solution nozzle 106 has an elongated shape along the diameter direction of the wafer W, for example, the same as or longer than the diameter dimension of the wafer W. For example, an inkjet nozzle is used as the resist solution nozzle 106, and a plurality of supply ports (not shown) formed in a line along the longitudinal direction are formed below the resist solution nozzle 106. Further, the resist solution nozzle 106 is configured to be movable in the horizontal direction by a nozzle moving mechanism (not shown).

  As shown in FIG. 16, a template holding unit 107 that holds a template M is provided on the ceiling surface in the housing 100 and above the wafer holding unit 101. That is, the wafer holding unit 101 and the template holding unit 107 are arranged such that the wafer W placed on the wafer holding unit 101 and the template M held on the template holding unit 107 face each other. The template holding unit 107 has a chuck 108 that holds the outer peripheral portion of the back surface of the template M by suction. The chuck 108 is movable in the vertical direction and rotatable about the vertical by a moving mechanism 109 provided above the chuck 108. Thereby, the template M can be moved up and down in a predetermined direction with respect to the wafer W on the wafer holding unit 101.

  The template holding unit 107 has a light source 110 provided above the template M held by the chuck 108. The light source 110 emits light such as visible light, near ultraviolet light, and ultraviolet light, and the light from the light source 110 passes through the template M and is irradiated downward.

  Note that the transfer of the wafer W at the transfer station 90, the operation of the drive system at the imprint station 80, etc., for example, the supply timing of the resist solution from the resist solution nozzle 106, the supply amount of the resist solution, the horizontal movement of the resist solution nozzle 106, the wafer The movement operation of W and the template M, the lighting of the light source 110, and the like are controlled by the controller 7 based on a control program stored in advance.

  Note that in the sixth embodiment, the other configurations are the same as those in the first embodiment, and thus the same components are denoted by the same reference numerals and description thereof is omitted.

  Next, processing of the wafer W by the imprint system configured as described above will be described.

  The wafer W is taken out from the wafer carrier 1 as in the first embodiment, and a hydroxyl group is formed on the surface in the ultraviolet irradiation unit (UV) (step S-1), and is carried into the coating unit (COT) ( Step S-2). The wafer W is rotated by driving the rotation drive mechanism 42 (step S-3), and the nozzle moving mechanism 56A is driven to move the adhesive agent nozzle 52 from the peripheral edge of the wafer W to a position above the center (step S). -4).

  Next, while rotating the wafer W, a silane coupling agent as an adhesion agent is supplied (discharged) from the adhesion agent nozzle 52 to the center of the wafer W (step S-5: supply process). Next, the nozzle moving mechanism 56A is driven to move the gas nozzle 53 to a position above the central portion of the wafer W (step S-6). Next, N2 gas is supplied from the gas nozzle 53 to the wafer W while rotating the wafer W (step S-7: removal process). Next, while rotating the wafer W, the gas nozzle 53 is moved from the central portion to the peripheral portion of the wafer W, and gas is supplied from the gas nozzle 53 to the surface of the wafer W (step S-8: removal step).

  Next, after the wafer W is carried out of the coating unit (COT) (step S-9), it is heated by the heating unit (HP), and an adhesive is chemically bonded to the surface of the wafer W to form the adhesive film C. After forming (step S-10: heating process), it is transported to the cooling unit (COL) and cooled (step S-11: cooling process). Subsequently, after washing | cleaning by the washing | cleaning unit (RINSE) (step S-12: washing | cleaning process), a spin drying process is performed (step S-13). In addition, since step S-1-step S-13 mentioned above are processed similarly to 1st Embodiment, detailed description is abbreviate | omitted.

  The wafer W subjected to the spin drying process (step S-13) is transferred by the transfer mechanism 21 to the transfer unit (TRS2) belonging to the multistage block G4A. Next, it is transported by the transport mechanism 92, passes through the transport station 90, and is transported to the delivery unit (TRS 3) belonging to the multistage block G 5 in the imprint station 80. Thereafter, the paper is transported to the transfer unit (TRS4) of the imprint block N by the transport mechanism 83, and is carried into the imprint unit (NIL) by a transport unit (not shown). The wafer W carried into the imprint unit (NIL) is transferred to the lift pins 102, and is placed and held on the wafer holder 101.

  On the other hand, while the adhesion film C is formed on the wafer W and transferred to the imprint unit (NIL), the template M on which the release agent Q is formed is removed from the template carrier 84 by a transfer mechanism (not shown). It is transported to the delivery unit (TRS5). Thereafter, the template M is transported into the imprint unit (NIL) by a transport mechanism (not shown), and is sucked and held by the chuck 108 of the template holding unit 107.

  When the wafer W and the template M are transferred into the imprint unit (NIL), the wafer W held by the wafer holding unit 101 is moved to a predetermined position in the horizontal direction for alignment. As shown in FIG. 17, square-shaped transfer positions D1 to D104 are determined in advance on the surface of the wafer W corresponding to the surface area of the transfer surface Ma of the template M, and the controller 7 controls the resist solution nozzle 106. After moving above the row of transfer positions D1 to D4 of the wafer W, a resist solution is applied to the transfer positions D1 to D4 of the wafer W, and a resist film R as a coating film in the present invention is applied to the transfer positions D1 to D4. It forms (refer Fig.18 (a)). Since the adhesion film C is formed on the surface of the wafer W, the resist film R is formed on a part of the surface of the adhesion film C formed on the surface of the wafer W. At this time, the controller 7 controls the supply timing and supply amount of the resist solution supplied from the resist solution nozzle 106.

  When the resist film R is formed on the transfer positions D1 to D4 of the wafer W, the controller 7 moves the wafer W held by the wafer holding unit 101 to a predetermined position in the horizontal direction so that the template M is transferred to the transfer position. Alignment is performed so as to be arranged above D1, and the template M held by the template holding unit 107 is rotated in a predetermined direction. Then, as shown by the arrow in FIG. 18A, the template M is lowered toward the transfer position D1 on the wafer W side. The template M is lowered to a predetermined position, and the transfer surface Ma of the template M is pressed against the resist film R formed on the surface of the adhesion film C formed on the surface of the wafer W. The predetermined position is set based on the height of the resist pattern P formed on the wafer W.

  Next, light is emitted from the light source 110. The light from the light source 110 passes through the template M and is irradiated onto the resist film R on the wafer W as shown in FIG. 18B, whereby the resist film R is photopolymerized. In this way, the transfer surface Ma of the template M is transferred to the resist film R disposed at the transfer position D1 of the wafer W, and a resist pattern P is formed.

  Next, as shown in FIG. 18C, the template M is raised and a resist pattern P is formed on the wafer W. At this time, since the adhesion film C is formed on the surface of the wafer, the resist component on the wafer W does not adhere to the transfer surface Ma of the template M.

  This is because the hydroxyl group formed by hydrolysis of the silane coupling agent forming the adhesion film C causes dehydration condensation with the hydroxyl group formed on the surface of the wafer W, and the silane coupling agent and the wafer W are covalently bonded. This is because the reactive functional group (α) of the silane coupling agent is firmly bonded to the resist film R and is firmly bonded to the wafer W and the resist film.

  Next, similarly to the transfer position D1, the template M is sequentially pressed against the resist film R applied to the transfer positions D2 to D4 to form a resist pattern P.

  After the resist pattern P is formed at the transfer positions D1 to D4, the resist solution nozzle 106 is moved above the row of transfer positions D5 to D10 (see FIG. 17) of the wafer W, and the resist solution is applied to the transfer positions D5 to D10. Thus, a resist film R is formed. Thereafter, the template M is sequentially pressed against the transfer positions D5 to D10 to form a resist pattern P.

  In this manner, the transfer is sequentially performed from the transfer position D1 at the upper left end of the wafer W to the transfer position D104 (see FIG. 17), and the imprint process is performed 104 times on one wafer W, for example.

  The wafer W that has been subjected to the imprint process is transferred to a transfer mechanism (not shown) by the lift pins 32, unloaded from the imprint unit (NIL), and returned to the wafer carrier 1 via the load-in station 90 and the wafer processing station 80. .

  On the other hand, the template M that has completed the imprint process is transported to the template carrier 84 via a transport mechanism (not shown). Note that the timing for exchanging the template M is set in consideration of deterioration of the template M and the like. The template M is also exchanged when a different resist pattern P is formed on the wafer W. For example, the template M may be exchanged every time one wafer W is processed, or, for example, the template M may be exchanged every lot.

  According to the imprint system in the sixth embodiment described above, since the substrate processing method and the substrate processing apparatus according to the present invention are applied, the silane coupling agent, which is an adhesive supplied to the surface of the wafer W, By spraying N 2 gas, excess silane coupling agent can be quickly removed, so that the throughput of substrate processing can be improved. Further, by blowing a gas to the silane coupling agent supplied to the surface of the wafer W, chemical bonding between the surface of the wafer W and the silane coupling agent is promoted, and the surface of the wafer W is coated with the silane coupling agent. Since the rate can be improved, the adhesion between the wafer W and the coating film C can be improved.

  In addition, although the substrate processing apparatus which concerns on 1st Embodiment was applied to the imprint system in 6th Embodiment mentioned above, it can apply the substrate processing apparatus which concerns on other embodiment, ie, 2nd-5th embodiment. it can.

<Seventh embodiment>
In the imprint system according to the sixth embodiment described above, the template M in which the release film Q for promoting the peeling between the resist film R and the template M is formed on the transfer surface Ma provided with the concavo-convex pattern is provided. Although the imprint process was performed, a release film Q for accelerating the peeling of the resist film R and the template M is formed on the transfer surface Ma provided with the uneven pattern of the template M in the imprint system. Processing may be performed. For example, as illustrated in FIGS. 19 and 20, a template processing station 120 that performs a mold release agent supply process or the like on the template M may be provided.

  19 and 20, the imprint system according to the seventh embodiment is stacked on a wafer carrier station 10, a wafer processing station 20A, the wafer carrier station 10 and the wafer processing station 20A, and a plurality of templates M are provided. For example, a template carrier station 130 for loading and unloading 25 template carriers 131, a template processing station 120 for performing a release agent supply process on the template M taken out from the template carrier station 130, and an imprint station 80A. Are connected between the wafer processing station 20A and the template processing station 120 and the imprint station 80A, and transfer the wafer W and the template M. And station 90A, as its major portion is constituted.

  The template carrier station 130 includes a placement portion 132 on which a plurality of template carriers 131 can be placed side by side, an opening / closing portion (not shown) provided on the front wall surface as viewed from the placement portion 132, and an opening / closing portion. A transport mechanism 133 for taking out the template M from the template carrier 131 is provided. The transfer mechanism 133 is arranged in the horizontal X and Y directions so as to transfer the wafer W between the template carrier 131 and a transfer unit (not shown) belonging to a multi-stage unit G8 on the template processing station 120 described later. It is configured to be movable in the direction and the vertical Z direction and to be rotatable about the vertical axis.

  A template processing station 120 surrounded by a casing 121 is connected to the back side of the template carrier station 130. As shown in FIG. 20, the template processing station 120 is provided with a transport mechanism 122 that is vertically movable by a vertical movement mechanism 123 at the center, and multistage blocks G6, G7, and G8 arranged around the transport mechanism 122. , G9, G10, G11, all processing units are arranged. The transfer mechanism 122 is movable in the horizontal X, Y direction and the vertical Z direction so as to transfer the wafer W between the processing units belonging to the multistage blocks G6, G7, G8, G9, G10, G11. In addition, it is configured to be freely rotatable about the vertical axis. In this case, the multistage blocks G6 and G7 are arranged on the right side, the multistage block G8 is disposed adjacent to the template carrier station 130, the multistage block G9 is disposed adjacent to the transfer station 90A, and the multistage blocks G10 and G11 are arranged. Are juxtaposed on the left side.

  In this case, in the multistage block G6, a release agent application unit (not shown) for applying the liquid release agent Q to the transfer surface Ma of the template M, and rinsing the release agent Q of the transfer surface Ma of the template M A rinse unit (not shown) is stacked. Similarly, in the multistage block G7, a release agent application unit (not shown) and a rinse unit (not shown) are stacked.

  The multi-stage block G8 is irradiated with ultraviolet rays on the template M, and a pre-cleaning unit (not shown) for cleaning the transfer surface Ma before the release agent Q is formed on the transfer surface Ma of the template M. A temperature adjustment unit (not shown) for adjusting the temperature of the template M, a delivery unit (not shown) for delivering the template M, and a heating unit (not shown) for heating the template M are stacked. Yes. Further, similarly to the multi-stage block G8, a pre-cleaning unit (not shown), a temperature control unit (not shown), a delivery unit (not shown), and a heating unit (not shown) are stacked on the multi-stage block G9. It has been.

  The multi-stage block G10 is overlaid with a post-cleaning unit (not shown) for cleaning the transfer surface Ma of the template M after use, and an inspection unit (not shown) for inspecting the transfer surface Ma of the template M after cleaning. It has been. Further, similarly to the multi-stage block 10, a post-cleaning unit (not shown) and an inspection unit (not shown) are stacked on the multi-stage block G11.

  The transfer station 90A includes a wafer processing station 20A and a transfer chamber 93 provided between the template processing station 120 and the imprint station 80A. The transfer chamber 93 includes a transfer arm having an arm for transferring the template M. A mechanism 94 and a transfer mechanism 92 having an arm for transferring the wafer W are provided. In addition, the transfer chamber 93 is provided with a buffer unit (BUF) for temporarily storing a plurality of, for example, 25 templates M on the left side with the transfer mechanism 94 in between. A unit (TUR) is arranged (see FIG. 20). Also, below the buffer unit (BUF) and the reversing unit (TUR), as in the sixth embodiment, a buffer unit (BUF) for temporarily storing a plurality of, for example, 25 wafers W is disposed ( (See FIG. 19).

  Further, the transport mechanism 94 delivers the template M between a delivery unit belonging to the multistage block G9 on the template processing station 120 side and a delivery unit (TRS6) belonging to a multistage unit G12 on the imprint station 80A side described later. It is configured to be movable in the horizontal X and Y directions and the vertical Z direction as well as to be rotatable about the vertical axis.

  The transfer mechanism 92 is configured in the same manner as in the sixth embodiment, and a transfer unit (TRS2) belonging to the multistage block G4A on the wafer processing station 20A side and a transfer unit belonging to a multistage unit G5 on the imprint station 80A side described later. The wafer W is transferred to and from (TRS3).

  An imprint station 80A surrounded by a casing 81A is connected to the back side of the transfer station 90A. As shown in FIG. 20, in the imprint station 80A, a transfer area for the wafer W and the template M is formed in the center, and multistage blocks G5 and G12 and an imprint block N2 are arranged around the transfer area. Yes.

  The multistage block G12 arranged adjacent to the transfer station 90A has a transfer unit (TRS6) for transferring the template M to and from the transfer mechanism 94, and a buffer unit for temporarily storing a plurality of, for example, 25 templates M. (BUF) is provided, and a transfer mechanism 86 formed to be movable up and down is provided for transferring the wafer W between the units stacked in the multistage block G12 (see FIG. 20). The multistage block G5 is configured in the same manner as in the sixth embodiment.

  Further, transfer mechanisms 83 and 87 having arms are provided in the transfer area of the wafer W and the template M formed at the center of the imprint station 80A. The transfer mechanism 87 for transferring the template M transfers the wafer W between a transfer unit (TRS6) belonging to the multi-stage unit G12 on the imprint station 80A side and a transfer unit (TRS7) belonging to an imprint block N2 described later. Are configured to be movable in the horizontal X and Y directions and the vertical Z direction and to be rotatable about the vertical axis.

  On the other hand, as in the sixth embodiment, the transfer mechanism 83 for transferring the wafer includes a transfer unit (TRS3) belonging to the multistage unit G5 on the imprint station 80A side, and a transfer unit (TRS7) belonging to an imprint block to be described later. The wafer W is transferred between the two.

  A template provided with a transfer surface Ma provided with a concavo-convex pattern on a resist film R formed on at least a part of the surface of the adhesion film C formed on the surface of the wafer W on both left and right sides toward the back of the transfer region. Five imprint blocks N2 for performing imprint processing for transferring the M transfer surface Ma are arranged in parallel.

  As shown in FIG. 20, the imprint block N2 includes a main unit from the imprint unit (NIL2) that performs imprint processing and the transfer unit (TRS7) that transfers the wafer W and the template M between the transfer mechanisms 83 and 87. It is configured.

  The imprint unit (NIL2) is surrounded by a housing (not shown), and a loading / unloading port (not shown) for the template M and a loading / unloading port (not shown) for the wafer W are formed on the side surface of the housing on the transport area side. Has been. The other configuration of the imprint unit (NIL2) is the same as that of the sixth embodiment.

  Note that in the seventh embodiment, the other configurations are the same as those in the sixth embodiment, and therefore the same portions are denoted by the same reference numerals and description thereof is omitted.

  Next, processing of the template M and the wafer W by the imprint system according to the seventh embodiment configured as described above will be described.

  The template M taken out from the template carrier 131 by the transport mechanism 133 is transported to the pre-cleaning unit by the transport mechanism 122 and cleaned by irradiating with ultraviolet rays. Thereafter, the template M is transported to the release agent application unit, and the release agent Q is applied to the entire transfer surface Ma of the template M (see FIG. 21A). In this case, as the release agent Q, for example, a fluorocarbon compound is used.

  Next, the template M is conveyed to a heating unit, and heated to, for example, 200 ° C., and the release agent Q on the template M is baked (see FIG. 21B). Subsequently, it is conveyed to the temperature adjustment unit, and the template M is adjusted to a predetermined temperature.

  Thereafter, the template M is conveyed to a rinsing unit, for example, immersed in an organic solvent, and only the unreacted portion of the release agent Q is peeled off, and the release agent Q along the transfer surface Ma is formed. Subsequently, gas gas is sprayed on the template M, and the transfer surface Ma is dried. Note that the unreacted portion of the release agent Q means a portion other than the portion where the release agent Q chemically reacts with the transfer surface Ma of the template M and adsorbs to the transfer surface Ma.

  Thereafter, the transport mechanism 122 transports the template M to the delivery unit of the block G9. Next, the template M is transported to the reversing unit (TUR) by the transport mechanism 94 of the transport station 90A, and the front and back surfaces of the template M are reversed. Thereafter, the template M is transported by the transport mechanism 94 to the delivery unit (TRS6) belonging to the multistage block G12 of the imprint station 80A. Thereafter, the sheet is transported to the transfer unit (TRS7) of the imprint block N2 by the transport mechanism 87, transported into the imprint unit (NIL2) by a transport mechanism (not shown), and sucked and held by the chuck 108 of the template holding unit 107.

  On the other hand, while the mold release agent processing is performed on the template M at the template processing station 120 and the template M is transferred to the imprint unit (NIL2), the wafer W is processed in the same manner as in the sixth embodiment, and the imprint unit ( NIL2).

  When the wafer W and the template M are transferred into the imprint unit (NIL2), the resist film R formed on a part of the surface of the adhesion film C formed on the surface of the wafer W is formed as in the sixth embodiment. Then, an imprint process for transferring the transfer surface Ma of the template M including the transfer surface Ma provided with the uneven pattern is performed (see FIG. 21D). The wafer W that has been imprinted is returned to the wafer carrier 1 in the same manner as in the sixth embodiment.

  On the other hand, the template M that has been subjected to the above-described processing is transported to the post-cleaning unit of the template processing station 120 via the transport means 87. The release liquid Q is removed by supplying a cleaning solution (see FIG. 21E).

  Thereafter, the template M is transported to the inspection unit by the transport mechanism 122. Then, in the inspection unit, the transfer surface Ma of the template M is inspected, for example, by observing interference fringes (see FIG. 21F).

  Thereafter, the template M is transported to the delivery unit belonging to the multistage unit G8 by the transport mechanism 122 and returned to the template carrier 131 by the transport mechanism 133. When the inspection result of the inspection unit is good, for example, when the transfer surface Ma of the template M is appropriately cleaned and the transfer surface Ma is not deteriorated, the template processing station 120 is not returned to the template carrier 131. It may be used again for the imprint process after being treated with a release agent.

  Note that the timing for carrying out the template M from the imprint unit (NIL2) is set in consideration of deterioration of the template M and the like. For example, the template M may be exchanged every time one wafer W is processed, or, for example, the template M may be exchanged every lot.

  According to the imprint system in the seventh embodiment described above, since the substrate processing method and the substrate processing apparatus according to the present invention are applied, the silane coupling agent that is an adhesive supplied to the surface of the wafer W is used. By spraying N 2 gas, excess silane coupling agent can be quickly removed, so that the throughput of substrate processing can be improved. Further, by blowing a gas to the silane coupling agent supplied to the surface of the wafer W, chemical bonding between the surface of the wafer W and the silane coupling agent is promoted, and the surface of the wafer W is coated with the silane coupling agent. Since the rate can be improved, the adhesion between the wafer W and the coating film C can be improved.

  In addition, although the substrate processing apparatus which concerns on 1st Embodiment was applied to the imprint system in 7th Embodiment mentioned above, it can apply the substrate processing apparatus which concerns on other embodiment, ie, 2nd-5th embodiment. it can.

  The example of the embodiment of the present invention has been described above, but the present invention is not limited to this embodiment and can take various forms. For example, although the wafer W is used as the substrate, the present invention is not limited to this, and other substrates such as an FPD (flat panel display) and a mask reticle for a photomask can be applied.

W Wafer (Substrate)
C Adhesion film R Coating film (resist film)
M Template Ma Transfer surface P Resist pattern COT Coating unit HP Heating unit COL Cooling unit RINSE Cleaning unit MOS Humidifying unit UV Ultraviolet irradiation unit 7 Controller (control unit)
40 Spin chuck (substrate holder)
42 Rotation drive mechanism 52 Adhesive agent nozzle (adhesive agent supply nozzle)
52A Spray nozzle (adhesive supply nozzle)
53 Gas nozzle (gas supply nozzle)
56A Nozzle moving mechanism (gas supply nozzle moving mechanism)

Claims (24)

Substrate processing method used for imprint processing in which the transfer surface of a template having a transfer surface provided with a concavo-convex pattern is transferred to a coating film formed on at least a part of the surface of an adhesion film formed on the surface of the substrate Because
Supplying the adhesive agent to the surface of the substrate while rotating the substrate;
While removing the substrate, supplying a gas to the surface of the substrate to remove excess adhesive agent,
A substrate processing method comprising the steps of: The substrate processing method according to claim 1,
In the supplying step, a mist of the adhesive is supplied to the surface of the substrate. In the processing method of the board | substrate of Claim 1 or 2,
The substrate processing method, wherein, in the supplying step, the adhesive agent mixed with water is supplied to the surface of the substrate. In the processing method of the board | substrate in any one of Claim 1 thru | or 3,
In the removing step, after supplying the gas from the gas supply nozzle to the central portion of the substrate, the gas supply nozzle is moved from the central portion of the substrate to the peripheral portion, and the gas is supplied from the gas supply nozzle to the surface of the substrate. And a substrate processing method. In the processing method of the board | substrate in any one of Claim 1 thru | or 4,
In the removing step, a gas containing water vapor is supplied to the surface of the substrate. In the processing method of the board | substrate in any one of Claim 1 thru | or 5,
A substrate processing method, wherein the supplying step and the removing step are performed in a humidified atmosphere. In the processing method of the board | substrate in any one of Claim 1 thru | or 6,
The substrate processing method further comprising a step of supplying water vapor to the surface of the substrate before the supplying step. In the processing method of the board | substrate in any one of Claim 1 thru | or 7,
A heating step of heating the substrate to a predetermined temperature after the removing step, and chemically bonding the adhesive to the surface of the substrate to form an adhesive film; Processing method. The substrate processing method according to claim 8,
A substrate processing method, further comprising a cooling step of cooling the substrate to a predetermined temperature after the heating step. In the processing method of the board | substrate in any one of Claim 1 thru | or 9,
A substrate processing method, further comprising a cleaning step of supplying a cleaning liquid to the substrate and cleaning the substrate after the removing step. In the processing method of the board | substrate in any one of Claim 1 thru | or 10,
The substrate processing method further comprising a step of forming a hydroxyl group on the surface of the substrate by subjecting the surface of the substrate to ultraviolet treatment before the supplying step. 12. The substrate processing method according to claim 1, wherein:
The method for treating a substrate, wherein the adhesion agent is a silane coupling agent. Substrate processing apparatus for imprint processing that transfers the transfer surface of a template provided with a transfer surface provided with a concavo-convex pattern on a coating film formed on at least a part of the surface of an adhesion film formed on the surface of the substrate Because
An application unit that removes excess adhesive by supplying gas to the surface of the substrate while rotating the substrate and supplying gas to the surface of the substrate,
The application unit
A substrate holder for horizontally holding the substrate;
A rotation drive mechanism for rotating the substrate holding unit around a vertical axis;
An adhesion agent supply nozzle for supplying the adhesion agent to the surface of the substrate held by the substrate holder;
A gas supply nozzle for supplying gas to the surface of the substrate held by the substrate holding unit;
A controller that controls the supply of the adhesive from the adhesive supply nozzle to the substrate, the supply of gas from the gas supply nozzle to the substrate, and the rotation drive mechanism;
Based on a control signal from the control unit, after supplying the adhesive agent to the surface of the substrate from the adhesive agent supply nozzle while rotating the substrate, the gas supply nozzle from the gas supply nozzle while rotating the substrate A substrate processing apparatus, wherein a gas is supplied to a surface of a substrate to remove excess adhesive. 14. The substrate processing apparatus according to claim 13, wherein
A substrate processing apparatus, comprising: supplying a mist of the adhesive to the surface of the substrate from the adhesive supply nozzle. The substrate processing apparatus according to claim 13 or 14,
The substrate processing apparatus, wherein the adhesive agent mixed with water is supplied to the surface of the substrate from the adhesive agent supply nozzle. In the processing apparatus of the board | substrate in any one of Claim 13 thru | or 15,
The gas supply nozzle can be moved in a direction along the surface of the substrate, and further includes a gas supply nozzle moving mechanism whose movement operation is controlled by the control unit. After the gas is supplied to the central portion of the substrate, the gas is supplied from the gas supply nozzle to the substrate while the gas supply nozzle is moved from the central portion to the peripheral portion of the substrate. apparatus. The substrate processing apparatus according to any one of claims 13 to 16,
A substrate processing apparatus, wherein a gas containing water vapor is supplied to the surface of the substrate from the gas supply nozzle. The substrate processing apparatus according to any one of claims 13 to 17,
A substrate processing apparatus, further comprising a humidifying unit capable of forming the inside of the coating unit in a humidified atmosphere. In the processing apparatus of the board | substrate in any one of Claim 13 thru | or 18,
The controller supplies gas containing water vapor from the gas supply nozzle to the surface of the substrate while rotating the substrate before supplying the adhesive to the surface of the substrate from the adhesive agent supply nozzle. A substrate processing apparatus. The substrate processing apparatus according to any one of claims 13 to 19,
A substrate processing apparatus, further comprising: a heating unit that heats the substrate processed in the coating unit and chemically bonds the adhesive to the surface of the substrate to form an adhesive film. The substrate processing apparatus according to claim 20, wherein
A substrate processing apparatus, further comprising a cooling unit that cools the substrate processed in the heating unit to a predetermined temperature. The substrate processing apparatus according to any one of claims 13 to 21,
A substrate processing apparatus, further comprising: a cleaning unit that supplies a cleaning liquid to the substrate processed in the coating unit to perform cleaning. The substrate processing apparatus according to any one of claims 13 to 22,
An apparatus for treating a substrate, further comprising an ultraviolet irradiation unit for forming a hydroxyl group on the surface of the substrate by performing ultraviolet treatment on the surface of the substrate before treatment in the coating unit. 24. The substrate processing apparatus according to claim 13, wherein:
The substrate processing apparatus, wherein the adhesion agent is a silane coupling agent.

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