201226160 六、發明說明： 【發明所屬之技術領域】 本發明係關於對在模板的表面形成有預定圖案之圖案 區域上塗佈處理液，再處理該圖案區域之模板處理方法、 程式、電腦記憶媒體及模板處理裝置。 【先前技術】 例如在半導體裝置的製造製程，對例如半導體晶圓（ 以下，稱爲「晶圓」》)進行光微影處理，來在晶圓上形 成預定的光阻圖案。 當形成上述的光阻圖案之際，爲了謀求半導體裝置之 更進一步的高積體化，而被要求該光阻圖案的細微化。一 般，光微影處理之細微化的界限爲使用於曝光處理之光的 波長程度。因此，以往以來，將曝光處理的光予以短波長 化之技術行進中。但，在曝光光源的短波長化上，會有技 術上、成本上之界限，在僅使光的短波長化行進之方法上 ，仍處於不易形成例如數奈米之細微的光阻圖之狀況。 ' 因此，近年，被提案有使用所謂的壓印之方法，來在 ' '晶圓上形成細微的光阻圖案，取代在晶圓上進行光微影處 理。此方法係將在表面具有細微的圖案之模板（亦有被稱 爲壓模、模具之情況）壓接於形成在晶圓上之光阻劑表面 ，然後予以剝離，對該光阻劑表面直接進行圖案的轉印者 (專利文獻1 )。 [專利文獻1]特開2009-43998號公報 -5- 201226160 【發明內容】 [發明所欲解決之課題] 在上述的壓印方法所使用之模板的表面，爲了使模板 容易從光阻劑剝離，通常成膜有對光阻劑具有撥液性之脫 模劑。 當在模板的表面進行脫模劑成膜之際，首先，將模板 的表面洗淨後，對該模板的表面塗佈脫模劑。接著，爲了 使所成膜之脫模劑具有預定的接觸角而能夠發揮對光阻劑 之撥液性機能，讓脫模劑密接於模板的表面。具體而言， 使脫模劑與模板的表面產生化學反應，僅讓含於脫模劑中 的成分中之對光阻劑具有撥液性的成分例如氟化物成分吸 附於模板的表面。然後，對脫模劑塗佈清洗液，以除去該 脫模劑的未反應部，將預定的膜厚的脫模劑成膜在模板的 表面。再者，脫模劑的未反應部係指脫模劑與模板的表面 產生化學反應而密接之部分以外的部分。 在將上述的脫模劑、清洗液等的處理液塗佈於模板上 之際，可採用例如旋轉式塗佈、噴嘴噴霧式塗佈、浸漬式 塗佈等的方法。旋轉式塗佈方法係對旋轉中的模板上供給 處理液，再藉由離心力，使處理液擴散於模板上之方法。 噴嘴噴霧式塗佈係爲將霧狀的處理液噴霧至模板上之方法 。浸漬式塗佈係爲將模板浸漬於處理液中之方法。 在此，在模板上需要成膜脫模劑之範圍，僅爲形成有 模板的圖案之圖案區域。即，由於圖案區域以外的模板表 -6- 201226160 面未被壓接於晶圓上的光阻劑表面，故，不需要成膜脫模 劑。但，即使使用上述的以往之任一塗佈方法，處理液會 被塗佈於模板的表面全面，無法控制成僅對圖案區域塗佈 處理液。又，在以往的塗佈方法，亦會對不必要的部分塗 佈處理液，造成需要多量之處理液。因此，在處理液的省 量化上仍有改善的空間。 本發明係有鑑於上述問題點而開發完成之發明，其目 的係在於既可抑制處理液朝模板上之供給量，亦可對該模 板的圖案區域適當地供給處理液。 [用以解決課題之手段] 爲了達到前述目的，本發明之模板處理方法，係針對 在模板的表面形成有預定圖案之圖案區域上塗佈處理液， 將該圖案區域進行處理之方法，其特徵爲，具有：用來對 前述圖案區域上塗佈前述處理液之處理液塗佈治具的塗佈 面至少覆蓋前述圖案區域，且，前述塗佈面與前述圖案區 域之間的距離成爲使前述處理液的毛細管現象產生之距離 的方式，將前述處理液塗佈治具與述模板相對向地配置之 配置製程；然後，對前述塗佈面與前述圖案區域之間供給 前述處理液之供給製程；及然後，藉由毛細管現象將前述 所供給之處理液僅擴散至前述圖案區域上之擴散製程。再 者，塗佈面爲例如平坦面。 若依據本發明，被供給到處理液塗佈治具的塗佈面與 模板的圖案區域之間的處理液會藉由毛細管現象，在塗佈 201226160 面與圖案區域之間擴散。即，處理液僅擴散於圖案區域上 。因此，處理液適當地塗佈在圖案區域上。並且，由於處 理液不會擴散到圖案區域以外的模板表面，故，能夠將處 理液的供給量抑制在較以往更少量，可將處理液的成.本低 廉化。 前述供給製程與前述擴散製程，亦可對複數種類的處 理液進行。複數種類的處理液，可採用脫模劑、用來使脫 模劑與模板表面之密接性提升的醇類、用來清洗脫模劑之 清洗液、用來洗淨模板表面之洗淨液等。 在前述供給製程，至少從形成於前述塗佈面之第1供 給口或設置在前述塗佈面的外側之第2供給口進行供給爲 佳。在該情況，至少前述第1供給口或前述第2供給口係 設置成複數個爲佳。 在前述擴散製程，對前述處理液賦予超音波振動爲佳 〇 前述擴散製程後，進一步具有使前述圖案區域上的前 述處理液乾燥之乾燥製程爲佳。在該情況，在前述乾燥製 程，對前述圖案區域上的前述處理液噴吹空氣爲佳。又， 在前述乾燥製程，亦可加熱前述圖案區域上的前述處理液 。且，在前述乾燥製程，亦可將前述圖案區域上的前述處 理液的周圍的環境予以減壓。 若依據別的觀點之本發明，爲了藉由模板處理裝置執 行前述模板處理方法，提供在控制該模板處理裝置之控制 部的電腦上作動之程式。 -8 - 201226160 又，若依據別的觀點之本發明，提供儲存有前述程 之可進行讀取的電腦記憶媒體。 別的觀點之本發明之模板處理裝置，係對在模板的 面形成有預定圖案的圖案區域上塗佈處理液，將該圖案 域予以處理之模板處理裝置，其特徵爲，具有：處理液 佈治具，其具備較前述圖案區域更大的塗佈面；處理液 給部，其對前述塗佈面與前述圖案區域之間供給前述處 液；及控制部，其係控制前述處理液塗佈治具與前述處 液供給部，使前述塗佈面至少覆蓋前述圖案區域，且， 述塗佈面與前述圖案區域之間的距離成爲使前述處理液 毛細管現象產生之距離的方式，將前述處理液塗佈治具 前述模板相對向配置，然後，對前述塗佈面與前述圖案 域之間供給前述處理液，然後，藉由毛細管現象，讓前 所供給之處理液僅擴散至前述圖案區域上。 前述處理液供給部，亦可供給複數種類的處理液。 前述處理液供給部，亦可至少具有形成在前述塗佈 之前述處理液的第1供給口或設置在前述塗佈面的外側 前述處理液的第2供給口。在該情況，至少前述第1供 口或前述第2供給口係設置成複數個爲佳。又，在前述 理液供給部具有前述第1供給口之情況，該處理液供給 係具有：第1供給路，其與前述第1供給口相同徑，且 連接於前述第1供給口；和第2供給路，其具有較前述 1供給口更大徑，且，連接於前述第1供給路爲佳。 亦可具有對在前述塗佈面與前述圖案區域之間擴散 式 表 區 塗 供 理 理 前 的 與 丨品. 述 面 之 給 處 部 ， 第 的 -9- 201226160 前述處理液賦予超音波振動之振動機構。 前述處理液塗佈治具，具有：接觸面’其呈環 於前述塗佈面的周圍，並與未形成有前述圖案區域 模板的表面接觸，而在前述處理液塗佈治具與前述 間形成有處理空間；密封材，其呈環狀設置在前述 ，用來保持前述處理空間內的氣密性；及排氣口’ 將前述處理空間內的環境進行排氣爲佳。 亦可具有對塗佈在前述圖案區域上之前述處理 空氣之空氣供給部。又，亦可具有將塗佈在前述圖 上的前述處理液予以加熱之加熱處理部。 在前述塗佈面，亦可設有網板。 [發明效果] 若依據本發明，既可抑制處理液朝模板上之供 亦可對該模板的圖案區域適當地供給處理液。 【實施方式】 以下，說明關於本發明的實施形態。圖1係顯 施形態之模板處理裝置1的結構之槪略的平面圖。 圖3係顯示模板處理裝置1的結構之槪略的側面圖 ，針對在以下的說明所使用的圖面，各構成要素之 爲了優先容易瞭解其技術內容者，並非對應實際的j 在本實施形態的模板處理裝置1’如圖4及圖 ，使用具有長方體形狀，且在表面形成有預定的轉 狀形成 之前述 模板之 接觸面 其用來 液噴吹 案區域 給量， 示本實 圖2及 。再者 尺寸係 3寸。 5所示 印圖案 -10 - 201226160 C之模板T。以下，將形成有轉印圖案c之模板τ的面稱 爲表面Ti，而將與該表面Tl相反側的面稱爲裏面τ2。又 ’在模板τ的表面τ!，將形成有轉印圖案c之區域稱爲 圖案區域，而將其外側的區域中之未形成有轉印圖案c 的區域稱爲外側區域D 2。圖案區域D ,係具有從外側區域 D2突出之梯形形狀。再者，模板τ可使用可供可見光、 近紫外光、紫外線等的光之透明材料例如玻璃。 模板處理裝置1係如圖1所示，具有將模板搬進搬出 站2與處理站3 —體地連接之結構，該模板搬進搬出站2 係將複數例如5片的模板Τ以匣單位在外部與模板處理裝 置1之間搬進搬出，或對模板匣CT將模板Τ予以搬進搬 出，而該處理站3係具備有對具備模板T實施預定的處理 之複數個處理單元。 在模板搬進搬出站2，設有匣載置台10。匣載置台10 係將複數個模板匣CT呈一列的方式自由載置在X方向（ 圖1中的上下方向）。即，模板搬進搬出站2構成爲可保 有複數個模板T。 在模板搬進搬出站2，設有可移動在朝X方向延伸的 搬送路11上之模板搬送體12。模板搬送體12係可自由移 動在垂直方向及垂直方向周圍（Θ方向）’可在模板匣 C τ與處理站3之間搬送模板T。 在處理站3之中心部設有搬送單元20°在此搬送單元 20的周邊，配置有多段地配置著各種處理單元之例如4個 處理塊G1〜G4。在處理站3的正面側（圖1的X方向負 -11 - 201226160 方向側），從模板搬進搬出站2側起依次配置第1處理塊 G1、第2處理塊G2。在處理站3的背面側（圖1的X方 向正方向側），自模板搬進搬出站2側起，依次配置第3 處理塊G3、第4處理塊G4。在處理站3的模板搬進搬出 站2側，配置有用來進行模板T的收授之轉移單元21。 搬送單元20具有搬送臂，其用來保持搬送模板T， 且，可自由移動於水平方向、垂直方向及垂直方向周圍。 又，搬送單元20係可對配置在處理塊G1〜G4內之後述 的各種處理單元、及轉移單元21搬送模板T。 在第1處理塊G1，如圖2所示，複數個液處理單元 例如對模板T塗佈各種處理液並將脫模劑成膜在該模板T 的圖案區域Di之塗佈單元30、31從下依次重疊成2段。 第2處理塊G2亦同樣地，塗佈單元32、33從下依次重疊 成2段。又，在第1處理塊G1及第2處理塊G2的最下 段，分別設有用來對前述塗佈單元3 0〜3 3供給各種處理 液之化學室3 4、3 5。 在第3處理塊G3，如圖3所示，對模板T照射紫外 線並將在模板T上成膜有脫模劑前的表面T,予以洗淨之 洗淨單元40、41從下依次重疊成2段。 在第4處理塊G4，亦與第3處理塊G3同樣地，洗淨 單元42、43從下依次重疊成2段。 其次，說明關於上述的塗佈單元30〜33的結構。塗 佈單元30係如圖6所示，具有處理容器100，在該容器 100的側面形成有模板T的搬進搬出口（未圖示）。 -12- 201226160 在處理容器100內的底面，設有用來載置模板T之載 置台101。模板τ係以其表面Τ!朝向上方的方式載置於載 置台101的上面。在載置台101內，設有升降銷102，其 係從下方支承模板Τ並使其進行升降。升降銷102係藉由 升降驅動部103可上下移動。在載置台1〇1的上面，形成 有貫通孔1〇4，其係將該上面朝厚度方向貫通，升降銷 102插通貫通孔104。 在載置台101的上方，設有處理液塗佈治具110，該 治具係用來對模板Τ的圖案區域D,上塗佈處理液。處理 液塗佈治具110係與載置台101上的模板Τ對向地配置著 〇 處理液塗佈治具110係如圖7及圖8所示，具有略長 方體形狀。在處理液塗佈治具110的下面，形成有較圖案 區域Di更大的塗佈面111，其至少覆蓋模板Τ的該圖案 區域D,。再者，在本實施形態，塗佈面111與圖案區域 D i係大致呈相同大小。在塗佈面1 1 1的外側，形成有環狀 之朝上方凹陷的凹陷部112。且，在凹陷部112的外側’ 形成有環狀的壁部1 1 3。壁部1 1 3的下面係形成爲與外側 區域D2接觸之接觸面114。又，藉由此接觸面112與外側 區域D2接觸，形成了被壁體113與模板T所包圍之處理 空間1 1 5。即，處理空間1 1 5爲包含塗佈面1 1 1與圖案區 域D,之間的間隙1 1 6、和凹陷部1 1 3之空間。再者’爲了 保持處理空間1 1 5內的氣密性，在接觸面1 1 4 ’設有環狀 之作爲密封材的〇形環117。又，處理液塗佈治具11〇係 -13- 201226160 如後述，構成爲當將處理液塗佈到圖案區域Di上時，塗 佈面111與圖案區域D,之間的距離Η成爲使處理液的毛 細管現象產生的距離之例如〇.〇1 mm〜0.1mm。再者，當增 大距離Η時，則在間隙1 1 6擴散之處理液的擴散速度變快 ，而當縮小距離Η時，則處理液的擴散速度變慢。 在處理液塗佈治具1 1 〇的中央部，設有處理液供給部 1 2 0，其用來對塗佈面1 1 1與圖案區域D !之間的間隙1 1 6 供給處理液。處理液供給部120係將處理液塗佈治具110 朝厚度方向貫通而設置著。 處理液供給部120具有：形成在塗佈面111之處理液 的第1供給口 121;連接於第1供給口 121，並朝垂直上 方延伸之第1供給路122 ;及進一步連接於第1供給路 122，並朝垂直上方延伸之第2供給路123。第1供給口 121的徑與第1供給路122的徑，爲相同的微小徑例如 0 · 5 mm。第2供給路1 2 3的徑係爲較第1供給路1 2 2的徑 大之例如5mm。因此，在第1供給路122與第2供給路 123之間形成有徑朝上方變大之錐形部124。此錐形部ι24 的錐形角度0爲例如120度。再者，第1供給路122與第 2供給路12 3的徑不限於本實施形態，只要第2供給路 1 2 3的徑較第1供給路1 2 2更大即可。 從處理液供給部1 2 0供給複數種類例如脫模劑、醇類 、清洗液的這3種處理液。如圖6所示，在處理液供給部 120的第2供給路123 ’連接有第1供給管13〇、第2供給 管131及第3供給管132。 -14- 201226160 第1供給管1 3 0係與在內部儲存脫模劑之脫模劑供給 源133相連通。又，在第1供給管130，設有供給機器群 1 34，其包含用來控制脫模劑的流動之閥、流量調節部等 。再者，脫模劑的材料，使用對後述的晶圓上的光阻劑膜 具有撥液性之材料例如氟化碳系化合物等。 第2供給管1 3 1係與在內部儲存常溫的醇類例如t-戊 醇貯留之醇類供給源1 3 5相連通。又，在第2供給管1 3 1 ，設有供給機器群136，其包含用來控制醇類的流動之閥 、流量調節部等。再者，醇爲醇類即可，亦可使用t-戊醇 以外的其他醇類。例如，可使用乙醇、甲醇、丙醇、丁醇 、戊醇、己醇、庚醇，或這些醇類的混合物。又，醇類的 濃度未特別限定，但，1 00 %爲佳。且，在本實施形態， 使用常溫的醇類，但，爲了抑制醇類結露，亦可使用例如 加熱到7 0 °C以下之醇類。 第3供給管1 32係與在內部儲存有清洗液例如脫模劑 的溶劑之清洗液供給源13 7相連通。又，在第3供給管 1 32 ’設有包含用來控制清洗液的流動之閥、流量調節部 等的供給機器群1 3 8。 如圖7及圖8所示，在壁體113，形成有用來進行處 理空間115內的環境之排氣的排氣口 140。在排氣口 140 ’如圖6所示，連接有經由排氣管丨4 1將處理空間1 1 5內 的環境進行真空吸引之真空泵142。 如圖7及圖8所示，在壁體Π 3的內側，設有對塗佈 面1 1 1與圖案區域D 1之間的間隙1 1 6噴吹空氣例如氮氣 -15- 201226160 等的不活性氣體、乾燥空氣等之作爲空氣供給部的氣體噴 嘴150。氣體噴嘴150係隔著塗佈面111配置在與排氣口 140相對向的位置。又，氣體噴嘴150係沿著如圖案區域 Di(塗佈面111)的一邊，朝X方向延伸設置著。又，氣 體噴嘴150係如後述，對塗佈於圖案區域D,上之處理液 噴吹空氣，藉此能使該處理液乾燥。再者，氣體噴嘴150 的形狀不限於本實施形態，能夠採用各種形狀。 在處理容器100的頂面中之處理液塗佈治具110的上 方，係如圖6所示，設有用來將處理液塗佈治具110朝垂 直方向及水平方向移動之移動機構160。移動機構160具 有：用來支承處理液塗佈治具110之支承構件161;和用 來支承支承構件161，將處理液塗佈治具110朝垂直方向 及水平方向移動之治具驅動部162。 再者，塗佈單元31〜33的結構，因與上述的塗佈單 元30的結構相同，在此省略其說明。 其次，說明關於上述的洗淨單元40〜43的結構。洗 淨單元40係如圖9所示，具有處理容器170，在該處理容 器170的側面形成有模板T的搬進搬出口（未圖示）。 在處理容器170內，設有用來吸附保持模板T之夾盤 171。 夾盤171係爲了使模板T的表面丁，朝向上方，而吸 附保持其裏面T2。在夾盤171的下方，設有夾盤驅動部 172。 此夾盤驅動部172係安裝在設置於處理容器170內 的底面且沿著Υ方向延伸之軌道173上。藉由此夾盤驅動 部172，夾盤171可沿著軌道173移動。 16- 201226160 在處理容器170內的頂面中之軌道173的上方，設有 用來對被夾盤1 7 1所保持的模板T照射紫外線之紫外線照 射部174。紫外線照射部1 74係如圖1 0所示，朝X方向 延伸。又，在模板T沿著軌道173移動中，藉由自紫外線 照射部174對該模板T的表面T!照射紫外線，使得紫外 線照射至模板τ的表面h全面。 再者，洗淨單元41〜43的結構，因與上述的洗淨單 元40的結構相同在此省略其說明。 在以上的模板處理裝置1，如圖1所示，設有控制部 200。控制部200係爲例如電腦，具有程式儲存部（未圖 示）。在程式儲存部，儲存有用來控制模板搬進搬出站2 與處理站3之間的模板T的搬送、處理站3之驅動系統的 動作等，執行模板處理裝置1之後述的模板處理的程式。 再者，此程式亦可爲被儲存在例如電腦可進行讀取之硬碟 (HD )、軟碟（FD )、光碟（CD )、磁光碟（MO )、記 憶體等的電腦可讀取之記憶媒體，可從該記憶媒體安裝到 控制部200。 本實施形態之模板處理裝置1係如以上的方式所構成 。其次，說明關於以該模板處理裝置1所進行之模板處理 。圖1 1係顯示此模板處理的主要處理流程，圖1 2〜1 4顯 示各製程之模板T的狀態。 首先，藉由模板搬送體12，從匣載置台10上的模板 匣CT取出模板T，再搬送至處理站3的轉移單元21(圖 1 1的製程A1 )。此時，在模板匣CT內，模板T係被收容 -17- 201226160 成形成有轉印圖案C之表面τ,朝向上方，在此狀態下， 模板τ被搬送至轉移單元21。 然後，藉由搬送單元20，模板T被搬送至洗淨單元 40，吸附保持於夾盤171。藉由夾盤驅動部172使模板T 一邊沿著軌道173移動，一邊從紫外線照射部174，對該 模板T照射紫外線。藉此，模板T的表面T,全面被紫外 線所照射，模板Τ的表面Ή的有機污染物、微粒等的不 純物被除去，而將該表面ΤΊ洗淨（圖11的製程Α2)。 然後，藉由搬送單元20、模板Τ被搬送至塗佈單元 30。被搬送到塗佈單元30之模板Τ被升降銷102所收授 ，而載置到載置台101。接著，藉由移動機構160，調整 處理液塗佈治具110的水平方向的位置，並且，如圖12( a)所示，使處理液塗佈治具110下降至其接觸面114接 觸到外側區域D2爲止。此時，塗佈面1 1 1係對向成覆蓋 圖案區域Di。又，塗佈面111與圖案區域D!之間的距離 Η係呈爲使脫模劑的毛細管現象產生之距離例如〇.〇5mm 。再者，如此，當接觸面114與外側區域D2接觸時，藉 由Ο形環1 1 7，保持處理空間1 1 5內的氣密性。 然後，如圖1 2 ( b)所示，從脫模劑供給源1 3 3，將 預定量的脫模劑S供給至處理液供給部1 2〇。再者，如後 述’脫模劑S係僅被供給至圖案區域D !上，並未供給至 外側區域D2上。因此，上述的預定量係爲與塗佈面π ! 與圖案區域D!之間的間隙116的體積相稱之量、或該較 量稍多之量。 -18- 201226160 然後’被供給到處理液供給部1 20之脫模劑S係如圖 1 2 ( c )所示，供給至塗佈面1 1 1與圖案區域D !之間的間 隙1 1 6。此時，脫模劑S依序通過處理液供給部1 20的第 2供給路123與第1供給路122，再從第1供給口 121.供 給至間隙1 1 6。經過發明者們精心檢討的結果得知，如此 當將第1供給口 121的徑與第1供給路122的徑作成爲相 同的微小徑時，脫模劑S變得容易在第1供給路1 22流動 。針對該原因，發明者們推測爲依據抑制了所謂楔鎖作用 乙事與毛細管現象之相互作用所產生的。再者，在此所稱 之楔鎖作用係指例如第2供給路1 2 3不經由第1供給路 122的方式連接於第1供給口 121之情況，在第1供給口 121’脫模劑S的表面張力會變大，造成脫模劑S變得不 易流動之現象。如以上所述，若採用本實施形態的處理液 供給部1 2 0，則可將脫模劑S圓滑地供給至間隙1 1 6。再 者，如此能將處理液圓滑地供給至間隙1 1 6的作用，如後 述’由處理液供給部120供給其他處理液例如醇類、清洗 液、洗淨液等之情況也相同。 然後’被供給到間隙1 1 6之脫模劑S，如圖1 2 ( c ) 所示，藉由毛細管現象，在該間隙116擴散。又，圖12( d )所示’脫模劑S塡充於間隙1 1 6，再塗佈至圖案區域 D1上（圖1 1的製程A 3 )。此時，如上述，由於被供給至 間隙1 1 6之脫模劑S的供給量係與間隙丨〗6的體積相稱的 量’並且’僅會在間隙1丨6產生毛細管現象，故，不會產 生脫模劑S流出至外側區域d2之情況。 -19- 201226160 然後，如圖1 2 ( e )所示’使處理液塗佈治具1 1 〇上 升至預定的位置。此預定的位置係爲能夠從氣體噴嘴1 5 0 對圖案區域D,上的脫模劑S噴吹空氣之位置’且爲塗佈 面111與圖案區域D!之間的距離Η成爲1mm之位置。再 者，由於即使如此使處理液塗佈治具11〇上升，〇形環 1 1 7也會與外側區域D2接觸，故，處理空間1 1 5內的氣密 性被保持。又，從氣體噴嘴150對圖案區域D!上的脫模 劑S噴吹空氣，使該脫模劑S乾燥（圖11的製程A4)。 當圖案區域D!上的脫模劑S乾燥時，如圖13(a)所 示，將處理液塗佈治具110下降至預定的位置。此預定的 位置係爲能從處理液供給部120對圖案區域Di上的脫模 劑S供給醇類之位置，且爲塗佈面111與圖案區域〇,之 間的距離Η成爲例如0.1mm之位置。再者，此時也由於〇 形環1 1 7會與外側區域D 2接觸，故，處理空間1 1 5內的 氣密性被保持。 然後’如圖1 3 ( b )所示，從醇類供給源1 3 5將預定 量的醇類L供給至處理液供給部120。 然後’被供給至處理液供給部1 2 0之醇類L係如圖 1 3 ( c )所示，供給到塗佈面1 1 1與圖案區域D ,上的脫模 劑S之間的間隙1 1 6。接著，被供給到間隙〗1 6之醇類l ’藉由毛細管現象在該間隙1 1 6擴散。又，如圖1 3 ( d ) 所示’醇類L塡充於間隙1 1 6，並被塗佈到圖案區域D > 的脫模劑S上（圖1 1的製程A5 )。此時，由於僅在間隙 1 1 6產生毛細管現象’故’不會有醇類l流出到外側區域 -20- 201226160 〇2之情況產生。藉由如此被塗佈之醇類L，使得脫模劑S 與模板T的表面T!強固且緊密地產生化學反應，脫模劑S 密接於該模板T的表面h。再者，當如此脫模劑S密接 於模板T的表面"^時，藉由脫模劑S上的醇類L，脫模 劑S的未反應部的一部分，即脫模劑S與模板T的表面 T!產生化學反應，將與該表面"^密接之部分以外的一部 分除去。 然後，如圖13(e)所示，使處理液塗佈治具110上 升至預定的位置。此預定的位置係爲可從氣體噴嘴150對 圖案區域Di上的醇類L噴吹空氣之位置，且爲塗佈面 1 1 1與圖案區域Dl之間的距離Η成爲例如1 mm之位置。 再者，即使如此使處理液塗佈治具110上升，也由於〇形 環1 1 7接觸於外側區域D2，故處理空間1 1 5內的氣密性 被保持。又，從氣體噴嘴150對醇類L噴吹空氣，將該醇 類.L乾燥除去（圖1 1的製程A6 )。 當脫模劑S上的醇類L乾燥時，如圖14 ( a )所示， 讓處理液塗佈治具1 1 〇下降至其接觸面1 1 4接觸到外側區 域D2爲止。如此，當接觸面114與外側區域D2接觸時， 藉由0形環117，處理空間115內的氣密性被保持。 然後，如圖14 ( b )所示，從清洗液供給源13 7將預 定量的清洗液N供給至處理液供給部1 20。 然後，被供給到處理液供給部1 20之清洗液N係如圖 14(c)所示，被供給至塗佈面HI與圖案區域Di上的脫 模劑S之間的間隙1 1 6。接著，被供給到間隙1 1 6之清洗 -21 - 201226160 液N，藉由毛細管現象，在該間隙1 1 6擴散。又’如圖14 (d)所示，清洗液N被塡充至間隙116，並塗佈在圖案 區域〇,的脫模劑S上（圖11的製程A7)。此時，由於 會產生毛細管現象的僅有在間隙Π6，故，不會有清洗液 N流出到外側區域D2之情況產生。藉由如此所塗佈之清 洗液N，除去脫模劑S的未反應部。此時，因脫模劑S密 接於模板T的表面，所以’不會有預定的距離之脫模 劑S自模板T的表面T i剝離之情況產生。又’模板T上 的脫模劑S的接觸角係成爲預定的角度例如1 〇 8度’脫模 劑S對後述的光阻劑膜具有充分之撥液性，能夠發揮其脫 模機能。 然後，圖1 3 ( e )所示，使處理液塗佈治具1 1 〇上升 至預定的位置。此預定的位置係爲可從氣體噴嘴150對圖 案區域Eh上的清洗液N噴吹空氣之位置，且爲塗佈面 111與圖案區域Di之間的距離Η成爲例如1mm之位置。 再者，即使如此使處理液塗佈治具11〇上升，也由於〇形 環1 1 7接觸於外側區域D 2，故處理空間1 1 5內的氣密性 被保持。又，從氣體噴嘴150對清洗液N噴吹空氣，將該 清洗液N乾燥除去（圖11的製程A8)。藉此，沿著轉印 圖案C之脫模劑S以預定的膜厚成膜於模板τι。 然後，藉由搬送單元20、模板Τ被搬送至轉移單元 21，藉由模板搬送體12返回至模板匣CT (圖1 1的製程 A9 )。藉此，模板處理裝置1之一連串的模板處理結束， 沿著轉印圖案C的形狀之脫模劑S以預定的膜厚僅成膜於 -22- 201226160 模板τ的圖案區域D!上。 若依據以上的實施形態，被供給到處理液塗佈治具 1 1 0的塗佈面1 1 1與模板T的圖案區域D!之間的間隙1 1 6 之處理液（脫模劑S、醇類L、清洗液N)，藉由毛細管 現象在間隙1 1 6擴散。即，處理液僅擴散於圖案區域D, 上。因此，處理液被適當地塗佈在圖案區域Eh上。並且 ，由於處理液不會擴散至模板T的外側區域D2’故，能 夠將處理液的供給量抑制在較以往更少量。因此，能夠將 處理液的成本廉價化》 又，因從處理液塗佈治具110的處理液供給部120對 圖案區域D!，供給脫模劑S、醇類L、清洗液N的複數種 類的處理液，所以，能夠在一個塗佈單元30內進行複數 個處理。因此，能有效率地進行一連串的模板處理。又， 因不需要針對各處理液另外設置單元，所以，能夠縮小模 板處理裝置1的軌跡，並且能夠將裝置結構簡單化，進而 將裝置成本加以廉價化。再者，由於爲了如此供給複數種 類的處理液，在本實施形態，採用一種處理液塗佈治具 110，但，亦可針對每處理液，設置複數個處理液塗佈治 具 1 1 0。 又，因在將處理液擴散至圖案區域Di上後，從氣體 噴嘴1 5 0對處理液噴吹空氣，所以，能夠將該處理液予以 乾燥。藉此，在模板上，不會殘存不要之處理液，能夠適 當地進行後續的處理。 又，在進行製程A3〜製程A8的各處理液的塗佈與乾 -23- 201226160 燥之際，因能夠將處理空間115內的環境予以氣密地保持 ，所以，能夠適當地進行利用該處理液之處理。又’能夠 防止處理液飛散至處理空間115的外部。再者，在容許處 理液飛散至處理空間115的外部之情況，能夠省略將處理 空間115內的環境予以氣密地保持用之機構（0形環117 、排氣口 140、排氣管141、真空泵142 )。 再者，在以上的實施形態，係在製程A5及A6使用 醇類L，讓脫模劑S與模板T的表面"^之密接性提升後 ，在製程A7及A8使用清洗液N，除去脫模劑S的未反應 部，但，製程A7及製程A8之清洗液N的塗佈及乾燥， 亦可在製程A5及製程A6之醇類L的塗佈及乾燥之前進 行。在該情況，當在製程A3及製程A4，將脫模劑S成膜 於圖案區域D,上後，再將清洗液N塗佈於脫模劑S上， 除去脫模劑S的未反應部。然後，在脫模劑S上塗佈醇類 L，使脫模劑S與模板T的表面T,之密接性提升，並且藉 由該醇類L，確實地除去脫模劑S的未反應部。 又，當在以上的形態的製程A5，藉由醇類L，可充分 地除去脫模劑S的未反應部之情況時，亦可省略後續的製 程A7及A8之清洗液N的塗佈及乾燥。又，當在以上的 實施形態的製程A3，脫模劑S與模板T的表面T!充分地 密接之情況時，亦可省略後續的製程A5及製程A6之醇 類L的塗佈及乾燥。 在以上的實施形態的模板處理裝置1，在洗淨單元40 〜43，洗淨了模板T的表面T,，但，亦可在塗佈單元30 -24- 201226160 〜3 3，使用作爲處理液之洗淨液，來洗淨模板T的表面 Ή。又，模板處理裝置1的洗淨單元40〜43置換成塗佈 單元。 在該情況，在塗佈單元3 0，如圖1 5所示，洗淨液從 處理液塗佈治具1 1 〇的處理液供給部1 20供給。在處理液 供給部120，連接著第4供給管210。第4供給管210係 與內部儲存有洗淨液之洗淨液供給源211相連通。又，在 第4供給管210，設有用來包含控制洗淨液的流動之閥、 流量調節部等之供給機器群222。再者，洗淨液採用例如 ΙΡΑ (異丙醇）、丙酮、丙烯酸洗淨液等。 又，在製程Α2，模板Τ被搬送至塗佈單元30，再載 置到載置台101。接著，如圖16(a)所示，使處理液塗 佈治具110下降至其接觸面114接觸到外側區域D2爲止 。然後，圖16(b)所示，從洗淨液供給源211將預定量 的洗淨液Μ供給至處理液供給部1 20。被供給到處理液供 給部1 20之洗淨液Μ係如圖1 6 ( c )所示，供給至塗佈面 1 1 1與圖案區域D !之間的間隙1 1 6。被供給到間隙1 1 6之 洗淨液Μ，藉由毛細管現象，在該間隙1 1 6擴散。又，如 圖1 6 ( d )所示，洗淨液Μ塡充至間隙1 1 6，再被塗佈到 如圖案區域D!上。然後，如圖1 6 ( e )所示，使處理液塗 佈治具110上升至預定的位置。此預定的位置係爲可從氣 體噴嘴150對圖案區域D|上的洗淨液Μ噴吹空氣之位置 ，且爲塗佈面111與圖案區域D!之間的距離Η成爲例如 1mm之位置。又，從氣體噴嘴150對圖案區域D!上的洗 -25- 201226160 淨液Μ噴吹空氣，將該洗淨液Μ予以乾燥並除去。藉此 ，模板Τ的表面Τ,的有機污染物、微粒等的不純物被除 去，而將該表面ΊΊ洗淨。再者，關於其他的製程Al、A3 〜Α9，與前述實施形態相同，在此省略其說明。 若依據本實施形態，因在一個塗佈單元30內，亦可 進行模板Τ的表面7^的洗淨，所以，能夠更有效率地進 行一連串的模板處理。 再者，在本實施形態，在製程Α2洗淨模板Τ的表面 ΙΊ，但，亦可在製程Α8，將脫模劑S成膜於圖案區域D1 上後，對該脫模劑S ,的表面供給洗淨液Μ，來洗淨脫模劑 S。 在以上的實施形態，處理液塗佈治具110的處理液供 給部120，具有形成於塗佈面111之第1供給口 121，但 ’亦可如圖17所示，具有第2供給口 220，來代替第1供 給口 121。第2供給口 220係形成爲在處理液噴嘴221朝 向斜下方。處理液噴嘴221係配置於塗佈面111的外側的 凹陷部112。又，從第2供給口 221朝圖案區域D!的一端 部，供給處理液。再者，雖未圖示，在處理液噴嘴221， 例如連接有上述的第1供給管130、第2供給管131、第3 供給管1 32、第4供給管210。又，從第2供給口 221供 給脫模劑S、醇類L、清洗液Ν、洗淨液Μ等的複數個處 理液。 在該情況，如圖1 7所示，從第2供給口 220所吐出 的處理液係被供給至圖案區域D i的一端部。該被供給之 -26- 201226160 處理液，藉由毛細管現象，在塗佈面111與圖案區域D, 之間的間隙116，朝圖案區域〇1的另一端部擴散。藉此， 處理液被塗佈到圖案區域Di上。因此，即使在本實施形 態，亦可處理液適當地僅塗佈到圖案區域Di上。 再者’處理液供給部1 2 0係如圖1 8所示，亦可具有 第1供給口 121與第2供給口 22 0雙方。即，處理液供給 部120亦可具有第1供給口 121、第1供給路122及第2 供給路123的組合（以下，亦有稱爲「第1供給機構」之 情況）、和第2供給口 2 2 0及處理液噴嘴2 2 1的組合（以 下’亦有稱爲「第2供給機構」之情況）雙方。又，在該 情況下，如圖19所示，第1供給機構與第2供給機構亦 可分別設置複數個。無論在哪一種情況，因從第1供給口 1 21與第2供給口 122雙方供給處理液，所以，能夠將處 理液迅速地塗佈到圖案區域D!上。特別是在從複數個第！ 供給口 1 2 1與複數個第2供給口 1 22供給處理液之情況， 能夠更有效率地將處理液塗佈到圖案區域D!上。 又，以上的實施形態的處理液供給部120之第1供給 機構，雖具有第1供給口 121、第1供給路122及第2供 給路123，但，亦可如圖20所示，省略第1供給路122。 在該情況，第2供給路123連接於第1供給口 121。又， 第2供給路123的徑較第1供給口 121的徑更大。因此， 在第1供給口 121與第2供給路122之間，形成有徑朝上 方逐漸變大之錐形部124。再者，此錐形部124的錐形角 度0係與前述實施形態同樣地例如爲1 20度。本實施形態 -27- 201226160 的第1供給機構，在例如處理液的流量多之情況，即使省 略了第1供給路122，對未產生上述的楔鎖效果之情況極 爲有效。又，在該情況’因能夠省略第1供給路12 2，所 以，能夠容易地進行處理液供給部1 20的加工製造。 在以上的實施形態的製程A2、A4 ' A6、A8等，當使 脫模劑S、醇類L、清洗液N、洗淨液Μ等的處理液乾燥 時，從氣體噴嘴150對處理液噴吹空氣，但，亦可採用其 他方法來使處理液乾燥。 例如亦可藉由加熱圖案區域Di上的處理液，使該處 理液乾燥。在該情況，如圖21所示，在處理液塗佈治具 110的壁體113的內部，設有作爲加熱處理部之加熱器 23 0。藉由此加熱器230，將圖案區域Di上的處理液予以 加熱。 又，亦可藉由將處理空間Π 5內的環境進行減壓，使 圖案區域D !上的處理液乾燥。在該情況，使連接於處理 液塗佈治具110的排氣口 140之真空泵142作動，將處理 空間115內的環境減壓至預定的壓力。 不論在何種情況，均可將圖案區域D 1上的處理液適 當地乾燥。 在以上的實施形態的製程A2、A3、A5、A7等，當使 脫模劑S、醇類L、清洗液N、洗淨液Μ等的處理液擴散 至塗佈面1 1 1與圖案區域D 1之間的間隙1 1 6時，亦可對 該處理液賦予超音波振動。在該情況，例如圖22所示， 在處理液塗佈治具110的凹陷部112內配置超音波振動子 -28- 201226160 24 0。在超音波振動子2 4〇，連接有用來從該超音波振動子 240使超音波進行振盪之超音波振盪裝置241。又，藉由 對擴散在間隙116之處理液，從超音波振動子240賦予超 音波振動’能夠使該處理液更圓滑地擴散。在例如模板T 的轉印圖案C的高度高，處理液不易進入到轉印圖案C的 凹部內之情況，或在使用洗淨液Μ來將模板T的表面Ti 洗淨之情況特別有效。再者，上述的超音波振動子240與 超音波振盪裝置241構成本發明的振動機構。 在以上的實施形態，亦可在處理液塗佈治具110的塗 佈面Π1設置網板（未圖示）。網板係以與塗佈面111相 同大小進行設置的。在該情況，從處理液供給部1 20朝圖 案區域〇!所供給之脫模劑S、醇類L、清洗液N、洗淨液 Μ等的處理液，藉由毛細管現象，在網板與圖案區域Di 之間擴散。又，不會有處理液流出到外側區域D2之情況 產生。因此，即使在本實施形態，處理液亦可適當地塗佈 在圖案區域D!上。 以上的實施形態的模板處理裝置1，亦可如圖23所示 ，配置於壓印系統300。壓印系統300具有：使用模板T ，來在晶圓W上形成光阻圖案之壓印單元310;和晶圓搬 進搬出站3 1 1，其以匣單位，在外部與壓印系統300之間 將複數片例如25片的晶圓W予以搬進搬出，或對晶圓匣 Cw，將晶圓W予以搬進搬出。又，在模板處理裝置1與 壓印單元310之間，配置有用來進行模板T的收授之介面 站312。壓印系統300具有將這些模板處理裝置1、介面 -29- 201226160 站312、壓印單元310、晶圓搬進搬出站3 連接之結構。 在晶圓搬進搬出站311，設有匣載置台 台320係可將複數個晶圓匣CW呈一列地自 向（圖23中的上下方向）。即，晶圓搬進 成爲可保有複數個晶圓W。201226160 VI. Description of the Invention: [Technical Field] The present invention relates to a template processing method, a program, and a computer memory medium for applying a processing liquid to a pattern region having a predetermined pattern formed on a surface of a template, and processing the pattern region And template processing device. [Prior Art] For example, in a manufacturing process of a semiconductor device, for example, a semiconductor wafer (hereinafter referred to as "wafer") is subjected to photolithography to form a predetermined photoresist pattern on the wafer. When the above-described photoresist pattern is formed, in order to further increase the integration of the semiconductor device, the photoresist pattern is required to be fine. In general, the finest limit of photolithography is the wavelength of light used for exposure processing. Therefore, in the past, a technique of shortening the wavelength of exposure light has been progressing. However, in terms of shortening the wavelength of the exposure light source, there is a technical and cost limit, and in the method of only making the short wavelength of light travel, it is still difficult to form a fine photoresist pattern of, for example, several nanometers. . Therefore, in recent years, it has been proposed to use a so-called imprint method to form a fine photoresist pattern on the wafer instead of performing photolithography on the wafer. The method is to press a template having a fine pattern on the surface (also referred to as a stamper or a mold) to the surface of the photoresist formed on the wafer, and then peeling off, directly on the surface of the photoresist. The transfer of the pattern is performed (Patent Document 1). [Problem to be Solved by the Invention] The surface of the template used in the above-described imprint method is preferably made to peel the template from the photoresist. Usually, a film release agent having a liquid repellency to a photoresist is formed. When the release agent is formed on the surface of the template, first, after the surface of the template is washed, the release agent is applied to the surface of the template. Next, in order to impart a predetermined contact angle to the film-forming release agent, the liquid repellency to the photoresist can be exhibited, and the release agent is adhered to the surface of the template. Specifically, the release agent is chemically reacted with the surface of the template, and only a component such as a fluoride component having a liquid repellency to the photoresist contained in the component contained in the release agent is adsorbed on the surface of the template. Then, a cleaning liquid is applied to the release agent to remove the unreacted portion of the release agent, and a predetermined film thickness of the release agent is formed on the surface of the template. Further, the unreacted portion of the release agent means a portion other than the portion where the release agent and the surface of the template are chemically reacted and adhered. When the treatment liquid such as the above-mentioned release agent or cleaning solution is applied to the stencil, a method such as spin coating, nozzle spray coating, or immersion coating may be employed. The rotary coating method is a method in which a processing liquid is supplied onto a rotating template, and the treatment liquid is diffused onto the template by centrifugal force. The nozzle spray coating is a method of spraying a mist-like treatment liquid onto a template. The dip coating is a method of immersing a template in a treatment liquid. Here, the range of the film-forming release agent is required on the template, and is only the pattern region of the pattern in which the template is formed. That is, since the template table -6 - 201226160 other than the pattern region is not crimped to the photoresist surface on the wafer, the film release agent is not required. However, even if any of the above-described conventional coating methods are used, the treatment liquid is applied to the entire surface of the stencil, and it is not possible to control the application of the treatment liquid only to the pattern region. Further, in the conventional coating method, the treatment liquid is applied to an unnecessary portion, and a large amount of the treatment liquid is required. Therefore, there is still room for improvement in the ration of the treatment liquid. The present invention has been made in view of the above problems, and an object thereof is to suppress the supply amount of the treatment liquid onto the stencil, and to appropriately supply the treatment liquid to the pattern region of the stencil. [Means for Solving the Problem] In order to achieve the above object, the template processing method of the present invention is a method for applying a treatment liquid on a pattern region in which a predetermined pattern is formed on a surface of a template, and processing the pattern region. The coating surface of the coating liquid coating jig for applying the treatment liquid to the pattern region covers at least the pattern region, and the distance between the coating surface and the pattern region is such that a process of arranging the treatment liquid coating jig and the template in a manner in which the capillary phenomenon of the treatment liquid is generated; and then supplying the treatment liquid to the coating surface and the pattern region And then, by the capillary phenomenon, the diffusion process supplied to the aforementioned pattern region is diffused only by the capillary phenomenon. Further, the coated surface is, for example, a flat surface. According to the present invention, the treatment liquid supplied between the coated surface of the treatment liquid coating jig and the pattern region of the template diffuses between the coating 201226160 surface and the pattern region by capillary action. That is, the treatment liquid is only diffused on the pattern area. Therefore, the treatment liquid is appropriately coated on the pattern area. Further, since the treatment liquid does not diffuse to the surface of the template other than the pattern area, the supply amount of the treatment liquid can be suppressed to a smaller amount than before, and the treatment liquid can be formed. This is cheap. The above-described supply process and the above-described diffusion process may be carried out for a plurality of types of treatment liquids. For a plurality of types of treatment liquids, a release agent, an alcohol for improving the adhesion between the release agent and the surface of the template, a cleaning liquid for cleaning the release agent, a cleaning liquid for washing the surface of the template, and the like may be used. . In the supply process, it is preferable to supply at least from the first supply port formed on the coated surface or the second supply port provided on the outer side of the coated surface. In this case, it is preferable that at least the first supply port or the second supply port is provided in plural. In the diffusion process, it is preferable to impart ultrasonic vibration to the treatment liquid. After the diffusion process, it is preferable to further dry the process liquid in the pattern region. In this case, in the drying process, it is preferable to blow air to the treatment liquid on the pattern region. Further, in the drying process, the treatment liquid on the pattern region may be heated. Further, in the drying process, the environment around the treatment liquid in the pattern region may be depressurized. According to the present invention according to another aspect, in order to execute the template processing method by the template processing device, a program for operating on a computer that controls the control portion of the template processing device is provided. -8 - 201226160 Further, according to the present invention according to another aspect, a computer memory medium storing the above-described process for reading is provided. In another aspect, the stencil processing apparatus of the present invention is a stencil processing apparatus which applies a processing liquid to a pattern area in which a predetermined pattern is formed on a surface of a stencil, and processes the pattern area, and has a processing liquid cloth. a jig having a coating surface larger than the pattern area; a treatment liquid supply unit that supplies the liquid to the coating surface and the pattern area; and a control unit that controls the treatment liquid coating In the jig and the liquid supply unit, the coated surface covers at least the pattern region, and the distance between the coated surface and the pattern region is such a distance as to cause the capillary phenomenon of the treatment liquid, and the treatment is performed. The liquid coating jig is disposed opposite to the template, and then the processing liquid is supplied between the coating surface and the pattern region, and then the previously supplied processing liquid is diffused only to the pattern region by capillary action. . The processing liquid supply unit may supply a plurality of types of processing liquids. The treatment liquid supply unit may have at least a first supply port formed in the processing liquid to be applied or a second supply port provided on the outer side of the coating surface. In this case, it is preferable that at least the first supply port or the second supply port is provided in plural. Further, in the case where the chemical liquid supply unit includes the first supply port, the processing liquid supply system includes a first supply path having the same diameter as the first supply port, and is connected to the first supply port; The 2 supply path has a larger diameter than the first supply port, and is preferably connected to the first supply path. It may also have a coating before the diffusion of the diffusion surface between the coated surface and the pattern region. In the above-mentioned section, the -9-201226160 treatment liquid imparts a vibration mechanism for ultrasonic vibration. The treatment liquid coating jig has a contact surface that is in a ring around the coated surface and is in contact with a surface on which the pattern region template is not formed, and is formed between the treatment liquid coating jig and the foregoing There is a processing space; a sealing material which is disposed in a ring shape as described above for maintaining airtightness in the processing space; and an exhaust port' for exhausting the environment in the processing space. It is also possible to have an air supply portion for the aforementioned process air applied to the pattern region. Further, it may have a heat treatment portion that heats the treatment liquid applied to the above-described drawings. A mesh plate may also be provided on the coated surface. [Effect of the Invention] According to the present invention, it is possible to suppress the supply of the treatment liquid onto the template or to appropriately supply the treatment liquid to the pattern region of the template. [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 is a schematic plan view showing the structure of a template processing apparatus 1 of the embodiment. FIG. 3 is a side view showing a schematic configuration of the template processing apparatus 1. For the drawings used in the following description, the components of the components for easy understanding of the technical contents are not necessarily related to the actual configuration. As shown in FIG. 4 and FIG. 4, the template processing apparatus 1' uses a contact surface having a rectangular parallelepiped shape and having a predetermined shape formed on the surface thereof, and is used for the liquid injection area, which is shown in FIG. . In addition, the size is 3 inches. 5 shows the pattern T -10 - 201226160 C template T. Hereinafter, the surface on which the template τ of the transfer pattern c is formed is referred to as the surface Ti, and the surface on the opposite side to the surface T1 is referred to as the inside τ2. Further, the area where the transfer pattern c is formed is referred to as a pattern area on the surface τ! of the template τ, and the area where the transfer pattern c is not formed in the outer area is referred to as an outer area D2. The pattern area D has a trapezoidal shape that protrudes from the outer area D2. Further, as the template τ, a transparent material such as glass which can be used for visible light, near-ultraviolet light, ultraviolet light or the like can be used. As shown in FIG. 1, the template processing apparatus 1 has a structure in which a template loading/unloading station 2 and a processing station 3 are integrally connected, and the template loading/unloading station 2 sets a plurality of, for example, five templates in 匣 units. The external processing and loading/unloading with the template processing apparatus 1 or the loading and unloading of the template 对CT to the template 匣CT includes a plurality of processing units for performing predetermined processing on the template T. The sputum mounting table 10 is provided in the template loading/unloading station 2. The 匣 stage 10 is freely placed in the X direction (up and down direction in Fig. 1) in a plurality of templates 匣CT. That is, the template loading/unloading station 2 is configured to hold a plurality of templates T. The template transporting and unloading station 2 is provided with a template transporting body 12 that can be moved on the transport path 11 extending in the X direction. The template transport body 12 is freely movable around the vertical direction and the vertical direction (Θ direction) to transport the template T between the template 匣 C τ and the processing station 3. The transport unit 20 is provided at the center of the processing station 3. At the periphery of the transport unit 20, for example, four processing blocks G1 to G4 in which various processing units are arranged are arranged. The first processing block G1 and the second processing block G2 are disposed in this order from the side of the template loading/unloading station 2 on the front side of the processing station 3 (the negative direction of the X direction in the direction of the -11 - 201226160 in Fig. 1). In the back side of the processing station 3 (the positive side in the X direction of Fig. 1), the third processing block G3 and the fourth processing block G4 are sequentially disposed from the side of the template loading/unloading station 2. At the template loading/unloading station 2 side of the processing station 3, a transfer unit 21 for carrying out the transfer of the template T is disposed. The transport unit 20 has a transport arm for holding the transport template T and is freely movable in the horizontal direction, the vertical direction, and the vertical direction. Further, the transport unit 20 can transport the template T to the various processing units and the transfer unit 21 which will be described later in the processing blocks G1 to G4. In the first processing block G1, as shown in FIG. 2, a plurality of liquid processing units, for example, apply various treatment liquids to the template T, and form a release agent into the coating units 30, 31 of the pattern region Di of the template T. The lower ones are sequentially overlapped into two segments. Similarly to the second processing block G2, the coating units 32 and 33 are stacked in two stages from the bottom. Further, in the lowermost stages of the first processing block G1 and the second processing block G2, chemical chambers 34 and 35 for supplying various processing liquids to the coating units 30 to 3 3 are provided, respectively. In the third processing block G3, as shown in FIG. 3, the template T is irradiated with ultraviolet rays, and the surface T before the release agent is formed on the template T, and the cleaning units 40 and 41 are washed from the bottom to the bottom. 2 paragraphs. In the fourth processing block G4, similarly to the third processing block G3, the cleaning units 42 and 43 are superimposed in two stages from the bottom. Next, the configuration of the above-described coating units 30 to 33 will be described. As shown in Fig. 6, the coating unit 30 has a processing container 100, and a loading/unloading port (not shown) of a template T is formed on a side surface of the container 100. -12- 201226160 A mounting table 101 for placing the template T is provided on the bottom surface of the processing container 100. The template τ is placed on the upper surface of the mounting table 101 with its surface Τ! facing upward. Inside the mounting table 101, a lift pin 102 is provided which supports the formwork from below and lifts it up and down. The lift pin 102 is vertically movable by the lift drive unit 103. On the upper surface of the mounting table 1〇1, a through hole 1〇4 is formed which penetrates the upper surface in the thickness direction, and the lift pin 102 is inserted through the through hole 104. Above the mounting table 101, a processing liquid coating jig 110 for applying a processing liquid to the pattern region D of the template cymbal is provided. The treatment liquid coating jig 110 is disposed opposite to the template 上 on the mounting table 101. The treatment liquid coating jig 110 has a substantially rectangular parallelepiped shape as shown in Figs. 7 and 8 . Below the treatment liquid coating jig 110, a coated surface 111 having a larger pattern area Di is formed, which covers at least the pattern area D of the template crucible. Further, in the present embodiment, the coated surface 111 and the pattern region D i are substantially the same size. On the outer side of the coated surface 112, a recessed portion 112 which is recessed upward in a ring shape is formed. Further, an annular wall portion 1 1 3 is formed on the outer side ' of the recessed portion 112. The lower surface of the wall portion 1 1 3 is formed as a contact surface 114 in contact with the outer region D2. Further, by the contact surface 112 being in contact with the outer region D2, the processing space 1 15 surrounded by the wall 113 and the template T is formed. That is, the processing space 1 15 is a space including the gap 1 1 6 between the coated surface 11 1 and the pattern region D, and the depressed portion 1 1 3 . Further, in order to maintain the airtightness in the processing space 115, a ring-shaped ring 117 as a sealing material is provided on the contact surface 1 1 4 '. Further, the treatment liquid coating jig 11 - 201226160 is configured such that when the treatment liquid is applied to the pattern region Di, the distance Η between the application surface 111 and the pattern region D becomes a treatment. The distance produced by the capillary phenomenon of the liquid is, for example, 〇. 〇1 mm~0. 1mm. Further, when the distance Η is increased, the diffusion speed of the treatment liquid which is diffused in the gap 1 16 becomes faster, and when the distance Η is decreased, the diffusion speed of the treatment liquid becomes slow. In the central portion of the treatment liquid coating jig 1 1 〇, a treatment liquid supply unit 120 is provided for supplying a treatment liquid to the gap 1 16 between the coated surface 11 1 and the pattern region D ! The treatment liquid supply unit 120 is provided to penetrate the treatment liquid coating jig 110 in the thickness direction. The processing liquid supply unit 120 includes a first supply port 121 formed in the processing liquid on the coating surface 111, a first supply path 122 connected to the first supply port 121 and extending vertically upward, and further connected to the first supply port The path 122 is a second supply path 123 extending vertically upward. The diameter of the first supply port 121 and the diameter of the first supply path 122 are the same small diameter, for example, 0 · 5 mm. The diameter of the second supply path 1 2 3 is, for example, 5 mm larger than the diameter of the first supply path 1 2 2 . Therefore, a tapered portion 124 whose diameter increases upward is formed between the first supply path 122 and the second supply path 123. The taper angle 0 of this tapered portion ι24 is, for example, 120 degrees. Further, the diameters of the first supply path 122 and the second supply path 12 3 are not limited to the embodiment, and the diameter of the second supply path 1 2 3 may be larger than the first supply path 1 22. The three kinds of processing liquids of a plurality of types such as a releasing agent, an alcohol, and a washing liquid are supplied from the processing liquid supply unit 1120. As shown in Fig. 6, the first supply pipe 13', the second supply pipe 131, and the third supply pipe 132 are connected to the second supply path 123' of the processing liquid supply unit 120. -14- 201226160 The first supply pipe 1 30 is in communication with the release agent supply source 133 which stores the release agent therein. Further, the first supply pipe 130 is provided with a supply device group 134 including a valve for controlling the flow of the release agent, a flow rate adjusting portion, and the like. Further, as the material of the release agent, a material having a liquid repellency to a photoresist film on a wafer to be described later, for example, a fluorinated carbon compound or the like is used. The second supply pipe 1 3 1 is in communication with an alcohol supply source 135 which is stored in an internal temperature, such as t-pentanol. Further, in the second supply pipe 1 31, a supply device group 136 including a valve for controlling the flow of alcohol, a flow rate adjusting portion, and the like is provided. Further, the alcohol may be an alcohol, and other alcohols other than t-pentanol may also be used. For example, ethanol, methanol, propanol, butanol, pentanol, hexanol, heptanol, or a mixture of these alcohols can be used. Further, the concentration of the alcohol is not particularly limited, but 100% is preferable. Further, in the present embodiment, an alcohol at normal temperature is used. However, in order to suppress alcohol condensation, for example, an alcohol heated to 70 ° C or lower may be used. The third supply pipe 1 32 is in communication with a cleaning liquid supply source 13 7 in which a cleaning liquid such as a releasing agent is stored. Further, the third supply pipe 1 32 ' is provided with a supply device group 138 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting portion, and the like. As shown in Figs. 7 and 8, an exhaust port 140 for exhausting the environment in the treatment space 115 is formed in the wall body 113. As shown in Fig. 6, the exhaust port 140' is connected to a vacuum pump 142 that vacuum-attracts the environment in the processing space 1 15 via the exhaust pipe 丨4 1 . As shown in Fig. 7 and Fig. 8, in the inner side of the wall Π 3, a gap 1 1 6 between the coated surface 11 1 and the pattern area D 1 is blown with air such as nitrogen-15-201226160. A gas nozzle 150 serving as an air supply unit such as a reactive gas or dry air. The gas nozzle 150 is disposed at a position facing the exhaust port 140 via the coating surface 111. Further, the gas nozzle 150 is extended in the X direction along one side of the pattern region Di (coating surface 111). Further, as described later, the gas nozzle 150 blows air to the treatment liquid applied to the pattern region D, whereby the treatment liquid can be dried. Further, the shape of the gas nozzle 150 is not limited to this embodiment, and various shapes can be employed. Above the processing liquid coating jig 110 in the top surface of the processing container 100, as shown in Fig. 6, a moving mechanism 160 for moving the processing liquid coating jig 110 in the vertical direction and the horizontal direction is provided. The moving mechanism 160 has a supporting member 161 for supporting the processing liquid coating jig 110, and a jig driving portion 162 for supporting the supporting member 161 to move the processing liquid coating jig 110 in the vertical direction and the horizontal direction. Incidentally, the configurations of the coating units 31 to 33 are the same as those of the above-described coating unit 30, and the description thereof will be omitted. Next, the configuration of the above-described cleaning units 40 to 43 will be described. As shown in Fig. 9, the cleaning unit 40 has a processing container 170, and a loading/unloading port (not shown) of the template T is formed on the side surface of the processing container 170. Inside the processing container 170, a chuck 171 for adsorbing and holding the template T is provided. The chuck 171 is attached to hold the inside T2 in order to make the surface of the template T face upward. Below the chuck 171, a chuck driving portion 172 is provided. The chuck driving portion 172 is attached to a rail 173 which is provided on the bottom surface of the processing container 170 and extends in the x direction. By this chuck driving portion 172, the chuck 171 can be moved along the rail 173. 16-201226160 Above the rail 173 in the top surface of the processing container 170, an ultraviolet ray irradiating portion 174 for irradiating the template T held by the chuck 171 with ultraviolet rays is provided. The ultraviolet ray irradiation unit 1 74 extends in the X direction as shown in Fig. 10 . Further, in the movement of the template T along the rail 173, the surface T! of the template T is irradiated with ultraviolet rays from the ultraviolet ray irradiation portion 174 so that the ultraviolet ray is irradiated onto the surface h of the template τ. Incidentally, the configurations of the cleaning units 41 to 43 are the same as those of the above-described cleaning unit 40, and the description thereof will be omitted. In the above-described template processing apparatus 1, as shown in Fig. 1, a control unit 200 is provided. The control unit 200 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the transfer of the template T between the template loading/unloading station 2 and the processing station 3, and the operation of the drive system of the processing station 3, and executes a template processing to be described later by the template processing device 1. Furthermore, the program can be readable by a computer that is stored, for example, on a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory, etc. that can be read by a computer. A memory medium can be mounted from the memory medium to the control unit 200. The template processing apparatus 1 of the present embodiment is configured as described above. Next, the template processing performed by the template processing apparatus 1 will be described. Fig. 1 1 shows the main processing flow of this template processing, and Figs. 1 2 to 14 show the state of the template T of each process. First, the template T is taken out from the template 匣CT on the cymbal stage 10 by the template transport body 12, and then transferred to the transfer unit 21 of the processing station 3 (process A1 of Fig. 11). At this time, in the template 匣CT, the template T is accommodated -17-201226160 to form the surface τ of the transfer pattern C, and is directed upward, and in this state, the template τ is transported to the transfer unit 21. Then, the template T is conveyed to the cleaning unit 40 by the transport unit 20, and is adsorbed and held by the chuck 171. The template T is irradiated with ultraviolet rays from the ultraviolet ray irradiation unit 174 while moving the template T along the rail 173 by the chuck driving unit 172. Thereby, the surface T of the template T is entirely irradiated with ultraviolet rays, and impurities such as organic contaminants and fine particles on the surface of the template crucible are removed, and the surface is washed (the process Α 2 of Fig. 11). Then, it is conveyed to the coating unit 30 by the conveying unit 20 and the template 。. The template 搬 conveyed to the coating unit 30 is carried by the lift pins 102 and placed on the mounting table 101. Next, the position of the processing liquid coating jig 110 in the horizontal direction is adjusted by the moving mechanism 160, and as shown in FIG. 12(a), the processing liquid coating jig 110 is lowered until its contact surface 114 contacts the outside. Up to area D2. At this time, the coated surface 11 1 is opposed to the pattern region Di. Further, the distance between the coated surface 111 and the pattern area D! is such that the capillary phenomenon of the release agent is generated, for example, 〇. 〇5mm. Further, when the contact surface 114 comes into contact with the outer side region D2, the airtightness in the processing space 1 15 is maintained by the ring-shaped ring 117. Then, as shown in Fig. 12 (b), a predetermined amount of the releasing agent S is supplied from the releasing agent supply source 133 to the processing liquid supply unit 1 2〇. Further, as will be described later, the "release agent S" is supplied only to the pattern region D! and is not supplied to the outer region D2. Therefore, the predetermined amount described above is an amount commensurate with the volume of the gap 116 between the coated surface π! and the pattern area D!, or a slightly larger amount of the ratio. -18- 201226160 Then, the release agent S supplied to the processing liquid supply unit 1 20 is supplied to the gap 1 1 between the coated surface 11 1 and the pattern area D 2 as shown in Fig. 12 (c). 6. At this time, the releasing agent S sequentially passes through the second supply path 123 of the processing liquid supply unit 120 and the first supply path 122, and then from the first supply port 121. Supply to gap 1 16 . As a result of careful examination by the inventors, when the diameter of the first supply port 121 is the same as the diameter of the first supply path 122, the release agent S is easily applied to the first supply path 1 22 flows. For this reason, the inventors have speculated that it is based on the suppression of the interaction between the so-called wedge-locking action and the capillary phenomenon. In addition, the wedge locking action referred to herein means that, for example, the second supply path 1 2 3 is connected to the first supply port 121 without passing through the first supply path 122, and the release agent is applied to the first supply port 121'. The surface tension of S becomes large, causing the release agent S to become less likely to flow. As described above, when the treatment liquid supply unit 1 20 of the present embodiment is used, the release agent S can be smoothly supplied to the gap 1 16 . In addition, the effect of the smooth supply of the treatment liquid to the gap 1 16 can be the same as the case where the other treatment liquid such as an alcohol, a washing liquid, a washing liquid, and the like are supplied from the treatment liquid supply unit 120. Then, the release agent S supplied to the gap 1 16 is diffused in the gap 116 by capillary action as shown in Fig. 12 (c). Further, the release agent S shown in Fig. 12(d) is filled in the gap 161 and applied to the pattern region D1 (process A3 of Fig. 11). At this time, as described above, since the supply amount of the release agent S supplied to the gap 161 is a quantity commensurate with the volume of the gap 并且6 and 'only a capillary phenomenon occurs in the gap 1丨6, There is a case where the release agent S flows out to the outer region d2. -19- 201226160 Then, as shown in Fig. 12 (e), the treatment liquid coating jig 1 1 is raised to a predetermined position. The predetermined position is a position where the air can be blown from the release nozzle S of the pattern region D from the gas nozzle 150, and the distance 涂布 between the coated surface 111 and the pattern region D is 1 mm. . Further, even if the processing liquid coating jig 11 is raised as described above, the ring-shaped ring 117 is in contact with the outer region D2, so that the airtightness in the processing space 1 15 is maintained. Further, air is blown from the gas nozzle 150 to the release agent S on the pattern region D!, and the release agent S is dried (process A4 of Fig. 11). When the release agent S on the pattern area D! is dried, as shown in Fig. 13 (a), the treatment liquid coating jig 110 is lowered to a predetermined position. The predetermined position is a position at which the alcohol can be supplied from the treatment liquid supply unit 120 to the release agent S on the pattern area Di, and the distance Η between the coated surface 111 and the pattern area Η becomes, for example, 0. 1mm position. Further, at this time, since the ring-shaped ring 117 is in contact with the outer region D 2 , the airtightness in the processing space 1 15 is maintained. Then, as shown in Fig. 13 (b), a predetermined amount of the alcohol L is supplied from the alcohol supply source 135 to the treatment liquid supply unit 120. Then, the alcohol L supplied to the treatment liquid supply unit 1 120 is supplied to the gap between the release surface S on the coated surface 1 1 1 and the pattern region D as shown in Fig. 13 (c). 1 1 6. Next, the alcohol 1' supplied to the gap 116 is diffused in the gap 1 16 by capillary action. Further, as shown in Fig. 13 (d), the alcohol L is filled in the gap 161 and applied to the release agent S of the pattern region D > (process A5 of Fig. 11). At this time, since the capillary phenomenon is generated only in the gap 1 16 , there is no case where the alcohol 1 flows out to the outer region -20-201226160 〇2. By the alcohol L thus coated, the release agent S is strongly and chemically reacted with the surface T! of the template T, and the release agent S is in close contact with the surface h of the template T. Further, when the release agent S is in close contact with the surface of the template T, a part of the unreacted portion of the release agent S, that is, the release agent S and the template, by the alcohol L on the release agent S The surface T of T is chemically reacted, and a portion other than the portion of the surface that is intimately bonded is removed. Then, as shown in Fig. 13 (e), the treatment liquid coating jig 110 is raised to a predetermined position. The predetermined position is a position at which the air L can be blown from the gas nozzle 150 to the alcohol L in the pattern region Di, and the distance Η between the coated surface 11 1 and the pattern region D1 becomes, for example, 1 mm. Further, even if the processing liquid coating jig 110 is raised as described above, since the dome-shaped ring 117 is in contact with the outer region D2, the airtightness in the processing space 1 15 is maintained. Further, air is blown from the gas nozzle 150 to the alcohol L to the alcohol. L is removed by drying (Process A6 of Fig. 11). When the alcohol L on the release agent S is dried, as shown in Fig. 14 (a), the treatment liquid coating jig 11 1 〇 is lowered until its contact surface 1 1 4 contacts the outer region D2. Thus, when the contact surface 114 is in contact with the outer region D2, the airtightness in the processing space 115 is maintained by the O-ring 117. Then, as shown in Fig. 14 (b), a predetermined amount of the cleaning liquid N is supplied from the cleaning liquid supply source 13 to the processing liquid supply unit 120. Then, the cleaning liquid N supplied to the processing liquid supply unit 120 is supplied to the gap 1 16 between the coating surface HI and the releasing agent S in the pattern region Di as shown in Fig. 14(c). Next, the cleaning -21 - 201226160 liquid N supplied to the gap 1 16 is diffused in the gap 1 16 by capillary action. Further, as shown in Fig. 14 (d), the cleaning liquid N is kneaded to the gap 116 and applied to the release agent S in the pattern region ( (process A7 of Fig. 11). At this time, since only the gap Π6 is generated in the capillary phenomenon, there is no possibility that the cleaning liquid N flows out to the outer region D2. The unreacted portion of the releasing agent S is removed by the cleaning liquid N thus applied. At this time, since the releasing agent S is in close contact with the surface of the template T, the release agent S which does not have a predetermined distance is peeled off from the surface T i of the template T. Further, the contact angle of the release agent S on the template T is a predetermined angle, for example, 1 〇 8 degrees. The release agent S has sufficient liquid repellency to the photoresist film to be described later, and the release function can be exhibited. Then, as shown in Fig. 13 (e), the treatment liquid coating jig 11 1 〇 is raised to a predetermined position. This predetermined position is a position at which the air can be blown from the cleaning liquid N on the pattern area Eh by the gas nozzle 150, and the distance Η between the coating surface 111 and the pattern area Di becomes, for example, 1 mm. Further, even if the treatment liquid coating jig 11 is raised as described above, since the dome-shaped ring 117 is in contact with the outer region D 2, the airtightness in the treatment space 1 15 is maintained. Further, air is blown from the cleaning liquid N from the gas nozzle 150, and the cleaning liquid N is dried and removed (process A8 of Fig. 11). Thereby, the release agent S along the transfer pattern C is formed on the template τ1 with a predetermined film thickness. Then, the transport unit 20 and the template Τ are transported to the transfer unit 21, and the template transport body 12 returns to the template 匣CT (process A9 of Fig. 11). Thereby, a series of template processing of one of the template processing apparatuses 1 is completed, and the release agent S along the shape of the transfer pattern C is formed only on the pattern area D! of the template τ of -22-201226160 with a predetermined film thickness. According to the above embodiment, the treatment liquid (release agent S, which is supplied to the gap 1 1 6 between the coated surface 11 1 1 of the treatment liquid coating jig 1 10 and the pattern region D of the template T (release agent S, The alcohol L and the cleaning liquid N) are diffused in the gap 1 16 by capillary action. That is, the treatment liquid is only diffused on the pattern area D. Therefore, the treatment liquid is appropriately coated on the pattern area Eh. Further, since the treatment liquid does not diffuse to the outer region D2' of the template T, the supply amount of the treatment liquid can be suppressed to a smaller amount than in the past. Therefore, the cost of the treatment liquid can be reduced. Further, the treatment liquid supply unit 120 of the treatment liquid application jig 110 supplies the plurality of types of the release agent S, the alcohol L, and the cleaning liquid N to the pattern region D! Since the treatment liquid is used, a plurality of treatments can be performed in one coating unit 30. Therefore, a series of template processing can be performed efficiently. Further, since it is not necessary to separately provide a unit for each processing liquid, the trajectory of the template processing apparatus 1 can be reduced, and the apparatus configuration can be simplified, and the apparatus cost can be reduced. Further, in order to supply a plurality of kinds of treatment liquids in this manner, in the present embodiment, the treatment liquid 110 is applied by one treatment liquid, but a plurality of treatment liquid application treatments 110 may be provided for each treatment liquid. Further, since the treatment liquid is diffused into the pattern region Di, air is blown from the gas nozzle 150 to the treatment liquid, so that the treatment liquid can be dried. As a result, no unnecessary treatment liquid remains on the template, and subsequent processing can be appropriately performed. In addition, when the application of the respective processing liquids in the process A3 to the process A8 and the drying of the dry process are performed, the environment in the processing space 115 can be airtightly held, so that the processing can be appropriately performed. Liquid treatment. Further, it is possible to prevent the treatment liquid from scattering to the outside of the treatment space 115. Further, when the processing liquid is allowed to scatter outside the processing space 115, the mechanism for holding the environment in the processing space 115 in an airtight manner (the 0-ring 117, the exhaust port 140, the exhaust pipe 141, and the like) can be omitted. Vacuum pump 142). Further, in the above embodiment, the alcohol L is used in the processes A5 and A6, and the adhesion between the release agent S and the surface of the template T is improved, and then the cleaning liquid N is removed in the processes A7 and A8. The unreacted portion of the release agent S may be applied and dried before the application and drying of the alcohol L of the process A5 and the process A6. In this case, after the release agent S is formed in the pattern region D in the process A3 and the process A4, the cleaning liquid N is applied onto the release agent S to remove the unreacted portion of the release agent S. . Then, the alcohol L is applied onto the release agent S to improve the adhesion between the release agent S and the surface T of the template T, and the unreacted portion of the release agent S is surely removed by the alcohol L. . Further, in the case of the above-described process A5, the unreacted portion of the release agent S can be sufficiently removed by the alcohol L, and the application of the cleaning liquid N of the subsequent processes A7 and A8 can be omitted. dry. Further, in the case of the process A3 of the above embodiment, when the release agent S and the surface T of the template T are sufficiently adhered to each other, the application and drying of the alcohol L of the subsequent process A5 and the process A6 may be omitted. In the template processing apparatus 1 of the above embodiment, the surface T of the template T is washed in the cleaning units 40 to 43, but the coating unit 30 - 24 - 201226160 - 3 3 may be used as the treatment liquid. The cleaning solution is used to wash the surface of the template T. Further, the cleaning units 40 to 43 of the template processing apparatus 1 are replaced with coating units. In this case, in the coating unit 30, as shown in Fig. 15, the cleaning liquid is supplied from the processing liquid supply unit 120 of the processing liquid coating jig 1 1 。. The fourth supply pipe 210 is connected to the processing liquid supply unit 120. The fourth supply pipe 210 communicates with the cleaning liquid supply source 211 in which the cleaning liquid is stored. Further, the fourth supply pipe 210 is provided with a supply device group 222 for including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting portion, and the like. Further, the cleaning liquid is, for example, hydrazine (isopropyl alcohol), acetone, acrylic acid cleaning solution or the like. Further, in the process Α2, the template raft is conveyed to the coating unit 30 and placed on the mounting table 101. Next, as shown in Fig. 16 (a), the treatment liquid coating jig 110 is lowered until its contact surface 114 comes into contact with the outer region D2. Then, as shown in Fig. 16 (b), a predetermined amount of the cleaning liquid Μ is supplied from the cleaning liquid supply source 211 to the processing liquid supply unit 126. The cleaning liquid supplied to the processing liquid supply unit 1 20 is supplied to the gap 1 16 between the coated surface 11 1 and the pattern area D ! as shown in Fig. 16 (c). The cleaning liquid 供给 supplied to the gap 1 16 is diffused in the gap 1 16 by capillary action. Further, as shown in Fig. 16 (d), the cleaning liquid is filled to the gap 1 16 and then applied to the pattern area D!. Then, as shown in Fig. 16 (e), the treatment liquid coating jig 110 is raised to a predetermined position. The predetermined position is a position at which the air can be blown from the cleaning nozzle 对 on the pattern region D| from the gas nozzle 150, and the distance Η between the coated surface 111 and the pattern region D! is, for example, 1 mm. Further, air is blown from the gas nozzle 150 to the cleaning liquid in the pattern region D!, and the cleaning liquid is dried and removed. Thereby, the surface of the template crucible, impurities such as organic contaminants, particles, and the like are removed, and the surface is washed. In addition, the other processes A1, A3 to Α9 are the same as those of the above-described embodiment, and the description thereof is omitted here. According to this embodiment, since the surface 7 of the template crucible can be cleaned in one coating unit 30, a series of template processing can be performed more efficiently. Further, in the present embodiment, the surface ΙΊ of the template 洗 is washed in the process Α2, but the surface of the release agent S may be formed after the release agent S is formed on the pattern region D1 in the process Α8. The cleaning solution is supplied to wash the release agent S. In the above embodiment, the treatment liquid supply unit 120 of the treatment liquid application jig 110 has the first supply port 121 formed on the application surface 111. However, as shown in FIG. 17, the second supply port 220 may be provided. Instead of the first supply port 121. The second supply port 220 is formed to be obliquely downward in the processing liquid nozzle 221. The treatment liquid nozzle 221 is disposed in the recessed portion 112 outside the coating surface 111. Further, the processing liquid is supplied from the second supply port 221 toward one end portion of the pattern region D!. Further, although not shown, the first supply pipe 130, the second supply pipe 131, the third supply pipe 1 32, and the fourth supply pipe 210 are connected to the processing liquid nozzle 221, for example. Further, a plurality of treatment liquids such as a release agent S, an alcohol L, a cleaning liquid, and a cleaning liquid are supplied from the second supply port 221. In this case, as shown in Fig. 17, the processing liquid discharged from the second supply port 220 is supplied to one end portion of the pattern region D i . The supplied -26-201226160 treatment liquid is diffused toward the other end portion of the pattern region 〇1 by the capillary 116 between the coating surface 111 and the pattern region D. Thereby, the treatment liquid is applied onto the pattern area Di. Therefore, even in the present embodiment, the treatment liquid can be appropriately applied only to the pattern region Di. Further, as shown in Fig. 18, the processing liquid supply unit 1 20 may have both the first supply port 121 and the second supply port 22 0 . In other words, the processing liquid supply unit 120 may have a combination of the first supply port 121, the first supply path 122, and the second supply path 123 (hereinafter also referred to as a "first supply mechanism"), and a second supply. Both the port 2 2 0 and the treatment liquid nozzle 2 2 1 (hereinafter also referred to as "the second supply mechanism"). Further, in this case, as shown in Fig. 19, a plurality of the first supply means and the second supply means may be provided separately. In either case, since the processing liquid is supplied from both the first supply port 21 and the second supply port 122, the treatment liquid can be quickly applied to the pattern region D!. Especially in the plurals! When the supply port 1 2 1 and the plurality of second supply ports 1 22 supply the treatment liquid, the treatment liquid can be applied to the pattern region D! more efficiently. In addition, the first supply mechanism of the processing liquid supply unit 120 of the above-described embodiment has the first supply port 121, the first supply path 122, and the second supply path 123. However, as shown in FIG. 1 supply path 122. In this case, the second supply path 123 is connected to the first supply port 121. Further, the diameter of the second supply path 123 is larger than the diameter of the first supply port 121. Therefore, between the first supply port 121 and the second supply path 122, a tapered portion 124 whose diameter gradually increases upward is formed. Further, the taper angle 0 of the tapered portion 124 is, for example, 1 to 20 degrees as in the above embodiment. In the first supply mechanism of the embodiment -27-201226160, for example, when the flow rate of the processing liquid is large, even if the first supply path 122 is omitted, it is extremely effective to prevent the above-described wedge locking effect. In this case, the first supply path 12 2 can be omitted, so that the processing liquid supply unit 120 can be easily processed and manufactured. In the processes A2, A4', A6, and A8 of the above-described embodiment, when the treatment liquid such as the release agent S, the alcohol L, the cleaning liquid N, and the cleaning liquid is dried, the treatment liquid is sprayed from the gas nozzle 150. Air is blown, but other methods can be used to dry the treatment liquid. For example, the treatment liquid may be dried by heating the treatment liquid in the pattern area Di. In this case, as shown in Fig. 21, a heater 230 as a heat treatment portion is provided inside the wall 113 of the treatment liquid coating jig 110. The treatment liquid on the pattern region Di is heated by the heater 230. Further, the treatment liquid in the pattern area D! can be dried by depressurizing the environment in the processing space Π 5 . In this case, the vacuum pump 142 connected to the exhaust port 140 of the treatment liquid coating jig 110 is actuated to decompress the environment in the treatment space 115 to a predetermined pressure. In any case, the treatment liquid on the pattern area D 1 can be properly dried. In the processes A2, A3, A5, and A7 of the above embodiment, the treatment liquid such as the release agent S, the alcohol L, the cleaning liquid N, and the cleaning liquid is diffused to the coated surface 1 1 1 and the pattern area. When the gap between D 1 is 1 16 , ultrasonic vibration can be imparted to the treatment liquid. In this case, for example, as shown in Fig. 22, the ultrasonic vibrator -28-201226160 24 0 is disposed in the recessed portion 112 of the treatment liquid coating jig 110. An ultrasonic oscillating device 241 for oscillating the ultrasonic wave from the ultrasonic vibrator 240 is connected to the ultrasonic vibrator 24 〇. Further, by superimposing the ultrasonic vibration from the ultrasonic vibrator 240 to the treatment liquid diffused in the gap 116, the treatment liquid can be more smoothly diffused. For example, in the case where the height of the transfer pattern C of the template T is high, the treatment liquid does not easily enter the concave portion of the transfer pattern C, or the surface Ti of the template T is washed with the cleaning liquid 特别 is particularly effective. Further, the above-described ultrasonic vibrator 240 and ultrasonic oscillating device 241 constitute the vibration mechanism of the present invention. In the above embodiment, a screen (not shown) may be provided on the coating surface 1 of the treatment liquid coating jig 110. The stencil is set to the same size as the coated surface 111. In this case, the treatment liquid such as the release agent S, the alcohol L, the cleaning liquid N, and the cleaning liquid supplied from the processing liquid supply unit 120 toward the pattern region 〇 is subjected to a capillary phenomenon in the stencil and The pattern area Di spreads between. Further, there is no case where the treatment liquid flows out to the outer region D2. Therefore, even in the present embodiment, the treatment liquid can be appropriately applied to the pattern region D!. The template processing apparatus 1 of the above embodiment may be disposed in the imprint system 300 as shown in FIG. The imprint system 300 has: an imprint unit 310 that forms a photoresist pattern on the wafer W using a template T; and a wafer loading and unloading station 31, 1 in an external unit and an imprinting system 300 A plurality of wafers W, for example, 25 wafers W are carried in and out, or the wafer W is loaded and carried out on the wafer 匣Cw. Further, between the template processing apparatus 1 and the imprinting unit 310, an interface station 312 for receiving the template T is disposed. The imprint system 300 has a configuration in which the template processing device 1, the interface -29-201226160 station 312, the imprint unit 310, and the wafer loading/unloading station 3 are connected. In the wafer loading/unloading station 311, the cymbal mounting stage 320 is provided so that a plurality of wafer cassettes CW can be self-aligned in one row (up and down direction in Fig. 23). That is, the wafer is carried in so that a plurality of wafers W can be held.
在晶圓搬進搬出站311，設有可移動在 的搬送路321上之晶圓搬送體322。晶圓搬 在垂直方向及垂直方向周圍（Θ方向）自由 晶圓匣C w與壓印單元3 1 0之間搬送晶圓W 在晶圓搬進搬出站311，進一步設有可丨 方向之對準單元3 23。在對準單元323，依 的切口部的位置，調整晶圓W的方向。 在介面站312，設有在朝X方向延伸之 移動的模板搬送體331。又，在搬送路330 向側，配置有用來使模板T的表裏面反轉之 ，在搬送路330的X方向負方向側，配置有 管複數個模板T之緩衝匣333。模板搬送體 方向及垂直方向周圍（0方向）自由移動， 3、反轉單元332、緩衝匣333、壓印單元3 板T » 在模板處理裝置1的處理站3，於搬送I 站3 1 2側，配置有用來進行模板T的收授之 1 1加以一體地 3 20。匣載置 由載置於X方 搬出站3 1 1構 朝X方向延伸 送體322亦可 移動，並可在 3 調整晶圓W的 據例如晶圓W 搬送路3 3 0上 的X方向正方 ，反轉單元3 3 2 用來暫時地保 3 3 1可朝垂直 並可在處理站 1 〇之間搬送模 I元20的介面 .轉移單元334 -30- 201226160 其次，說明官於上述的壓印單元310的結構。壓印單 元3 10係如圖24所示，在側面具有處理容器340 ’其形成 有模板T的搬進搬出口（未圖示）與晶圓W的搬進搬出 口（未圖示）。 在處理容器3 40內的底面，設有用來載置並保持晶圓 W之晶圓保持部341。晶圓W係以其被處理面朝向上方的 方式載置於晶圓保持部341的上面。在晶圓保持部341內 ，設有用來從下方支承晶圓W並使其升降之升降銷3 42。 升降銷342係藉由升降驅動部343可上下動作。在晶圓保 持部341的上面，形成有朝厚度方向貫通該上面之貫通孔 344，升降銷342形成爲插通貫通孔344。又，晶圓保持部 341係藉由設置於該晶圓保持部341的下方之移動機構 345，可朝水平方向移動，且，可自由旋轉於垂直方向周 圍。 如圖25所不*在晶圓保持部341的X方向負方向（ 圖25的下方向）側，設有沿著Y方向（圖25的左右方向 )延伸之軌道3 50。軌道3 5 0從例如晶圓保择部341的Y 方向負方向（圖25的左方向）側的外側形成到γ方向正 方向（圖2 5的右方向）側的外側爲止。在軌道3 5 0，安裝 有臂351。 在臂351，支承有用來對晶圓W上供給光阻劑液之光 阻劑液噴嘴352。光阻劑液噴嘴3 52係具有與例如晶圓W 的直徑相同或較該直徑長、且沿著X方向之細長形狀。光 阻劑液噴嘴3 5 2係使用例如墨水噴射方式之噴嘴，在光阻 -31 - 201226160 劑液噴嘴3 52的下部，形成有沿著長手方向成爲一列之複 數個供給口（未圖示）。又，光阻劑液噴嘴3 52係可嚴密 地控制光阻劑液的供給時序、光阻劑液的供給量等。 臂351係藉由噴嘴驅動部353，可在軌道350上自由 移動。藉此，光阻劑液噴嘴352係可從設置於晶圓保持部 341的Y方向正方向側的外側之待機部3 5 4移動到晶圓保 持部341上的晶圓W的上方，且在該晶圓W的表面上可 朝晶圓W的徑方向移動。又，臂351係可藉由噴嘴驅動 部3 53自由升降，能夠調整光阻劑液噴嘴3 52的高度。 在處理容器340內的頂面中之晶圓保持部341的上方 ，如圖24所示，設有用來保持模板T之模板保持部3 60 。即，晶圓保持部341與模板保持部360係配置成使載置 於晶圓保持部341之晶圓W與保持於模板保持部3 60之 模板T相對向。又，模板保持部3 60具有用來吸附保持模 板T的裏面T2的外周部之夾盤361。夾盤361係藉由設置 於該夾盤361的上方之移動機構362，可朝垂直方向自由 移動，且，可自由旋轉於垂直方向周圍。藉此，模板Τ可 對晶圓保持部3 4 1上的晶圓W，朝預定的方向旋轉而進行 升降。 模板保持部360係具有光源363，其設置於保持在夾 盤361之模板Τ的上方。從光源3 63射出有例如可見光、 近紫外光、紫外線等的光，來自於此光源363之光可透過 模板Τ而朝下方照射。 本實施形態之壓印系統3 00以藉由以的結構所構成。 -32- 201226160 其次，說明關於以該壓印系統3 00所進行的壓印處理。圖 26係顯示此壓印處理的主要的處理流程，圖27係顯示此 壓印處理的各製程之模板T與晶圓W的狀態。 首先，藉由模板搬送體12，將模板T從模板搬進搬 出站2搬送至處理站3(圖26的製程B1)。在處理站3 ，依次進行模板T的表面T!的洗淨（圖26的製程B2) ，脫模劑S朝圖案區域Di的塗佈（圖26的製程B3 )、 脫模劑S的乾燥（圖26的製程B4)，醇類L朝圖案區域 Di上的脫模劑S的塗佈（圖26的製程B5)、醇類L的乾 燥除去（圖26的製程B6)，清洗液N朝如圖案區域D, 上的脫模劑S的塗佈（圖26的製程B7)、清洗液N的乾 燥除去（圖26的製程B8)，來在模板T的圖案區域D, 上成膜脫模劑S。再者，這些製程B2〜B8，因與前述實施 形態之製程A2〜A8相同，在此省略其詳細說明。 成膜有脫模劑S之模板T被搬送至轉移單元334。接 著，模板T藉由面站312的模板搬送體331搬送至反轉單 元332，而模板T的表裏面被反轉。即，模板τ的裏面T2 朝向上方。然後，模板Τ藉由模板搬送體331搬送至壓印 單元310，並吸附保持於模板保持部360的夾盤361。 如此，在處理站3，對模板Τ進行預定的處理，在朝 壓印單元3 1 0搬送模板Τ期間，在晶圓搬進搬出站3 1 1， 藉由晶圓搬送體322，從匣載置台320上的晶圓匣Cw取 出晶圓W，並搬送至對準單元323。又，在對準單元323 ，依據晶圓W的切口部的位置，調整晶圓W的方向。然 -33- 201226160 後，晶圓w藉由晶圓搬送體322搬送至壓印單元310(圖 26的製程B9 )。再者，在晶圓搬進搬出站3 1 1，晶圓匣 Cw內的晶圓W收容成其被處理面朝向上方，在此狀態下 ，晶圓W被搬送至壓印單元310。 被搬入到壓印單元310之晶圓W，收授於升降銷342 ，並被載置保持在晶圓保持部341上。接著，使保持於晶 圓保持部341之晶圓W移動至水平方向的預定的位置並 進行定位後，光使阻劑液噴嘴352朝晶圓W的徑方向移 動，如圖2 7 ( a )所示，在晶圓W上塗佈光阻劑液，形成 作爲塗佈膜之光阻劑膜R (圖26的製程B10)。此時，藉 由控制部200，控制從光阻劑液噴嘴3 52所供給之光阻劑 液的供給時序、供給量等。即，在形成於晶圓W上之光 阻圖案，塗佈成：塗佈於與凸部對應的部分（與模板T的 轉印圖案C之凹部對應的部分）之光阻劑液的量多，而塗 佈於與凹部對應的部分（與轉印圖案C之凸部對應的部分 )之光阻劑液的量少。如此，因應轉印圖案C的開口率， 在晶圓W上塗佈光阻劑液。 當在晶圓W上形成光阻劑膜R時，將保持於晶圓保 持部341之晶圓W移動至水平方向的預定的位置且進行 定位，並且將保持於模板保持部3 60之模板T朝預定的方 向旋轉。又，如圖27 ( a )的箭號所示，使模板T朝晶圓 W側下降。模板T下降至預定的位置，模板T的表面T, 按壓於晶圓W上的光阻劑膜R。再者，此預定的位置係依 據形成在晶圓W上之光阻圖案的高度加以設定的。接著 -34- 201226160 ，從光源3 63照射光。來自於光源3 63之光係如圖27 )所示，透過模板T而照射於晶圓W上的光阻劑膜R， 此，光阻劑膜R進行光聚合。如此，模板T的轉印圖案 轉印於晶圓W上的光阻劑膜R，·形成光阻圖案P (圖 的製程B 1 1 )。 然後，如圖27 ( c )所示，使模板T上升，在晶圓 上形成光阻圖案P。此時，因脫模劑S塗佈於模板T的 面T!，所以，不會有晶圓W上的光阻劑附著於模板T 表面ΤΊ之情況產生。然後，晶圓W，藉由升降銷342 授於晶圓搬送體322，從壓印單元310搬送至晶圓搬進 出站311，再返回至晶圓匣Cw (圖26的製程B12)。 者，在形成於晶圓W上之光阻圖案P的凹部，會有薄 光阻劑的殘存膜L殘留之情況，但，在亦可例如壓印系 3 00的外部，如圖27 ( d)所示，除去該殘存膜L。 反復進行以上的製程B9〜B12(圖26中的點線所 圍的部分），使用一個模板T，在複數個晶圓W上分別 成光阻圖案P。在這期間，反復進行上述的製程B1〜B8 來在複數個模板T的表面Ή上成膜脫模劑S。成膜有脫 劑S之模板Τ被保管於介面站3 1 2的緩衝匣3 3 3。 又，當對預定片數的晶圓W進行製程Β9〜Β12時 藉由晶圓搬送體331，從壓印單元310搬出使用過的模 Τ，並搬送至反轉單元332(圖26的製程Β13)。接著 藉由晶圓搬送體331’將緩衝匣333內的模板Τ搬送至 印單元310。藉此，更換壓印單元310內的模板Τ。再 (b 藉 C 26 W 表 的 收 搬 再 的 統 包 形 ) 模 板 壓 者 -35- 201226160 ，更換模板T之時序係考量模板T的劣化等來加以設定。 又，即使在晶圓w形成不同的圖案Ρ之情況，也更換模 板Τ。例如，亦可在每次使用模板τ1次，即更換該模板Τ 。又，亦可例如針對每1片的晶圓w，更換模板Τ，亦可 例如針對每1批更換模板Τ。 搬送至反轉單元332之使用過的模板Τ，其表裏面被 反轉。然後，藉由晶圓搬送體3 3 1、搬送單元20、晶圓搬 送體 12，模板Τ返回至模板匣C τ。如此，在壓印系統 300，一邊連續地更換模板Τ，一邊對複數個晶圓W連續 地形成預定的光阻圖案Ρ。 因以上的實施形態的壓印系統3 00具有模板處理裝置 1，所以，在壓印系統3 00，既可在模板Τ上形成脫模劑S ，亦可將該模板Τ連續地供給至壓印單元3 1 0。，藉此， 例如在模板Τ劣化前、或在複數個晶圓W上形成不同的 光阻圖案Ρ之情況，也能夠連續且有效率地更換壓印單元 3 1 〇內的模板Τ。因此，能夠對複數個晶圓W連續地形成 預定的光阻圖案Ρ。又，藉此，亦可達到半導體裝置之量 產化。 以上，參照圖面，說明了關於本發明的理想實施形態 ，但，本發明不限於上述實施例。若爲該業者，可明白依 據申請專利範圍所記載的技術思想範圍，能夠想到各種變 更例或修正例，這些變更例或修正例也當然屬於本發明的 技術的範圍。本發明不限於此實施例，能夠採用各種形態 。本發明係可適用於基板爲晶圓以外的FPD (扁平面板顯 -36- 201226160 示器）、光罩用光罩網線等的其他基板之情況。 【圖式簡單說明】 圖1係顯示本實施形態之模板處理裝置的結構之槪略 的平面圖。 圖2係顯示本實施形態之模板處理裝置的結構之槪略 的側面圖。 圖3係顯示本實施形態之模板處理裝置的結構之槪略 的側面圖。 圖4係模板的平面圖。 圖5係模板的側面圖。 圖6係顯示塗佈單元的結構之槪略的縱斷面圖。 圖7係顯示處理液塗佈治具的結構之槪略的縱斷面圖 〇 圖8係顯示處理液塗佈治具的結構之槪略的橫斷面圖 〇 圖9係顯示洗淨單元的結構之槪略的縱斷面圖。 圖10係顯示洗淨單元的結構之槪略的橫斷面圖。 圖1 1係顯示模板處理的各製程之流程圖。 圖1 2係示意地顯示模板處理的各製程之模板的狀態 之說明圖’ （a)爲顯示將處理液塗佈治具配置在預定的 位置之樣子' (b )爲顯示對處理液供給部供給脫模劑之 樣子、（c )爲顯示脫模劑在塗佈面與圖案區域之間的間 隙擴散的樣子' (d)爲顯示脫模劑塗佈在圖案區域上之 -37- 201226160 樣子、（e )爲顯示將脫模劑予以乾燥之樣子。 圖1 3係示意地顯示模板處理的各製程之模板的狀態 之說明圖，（a)爲顯示將處理液塗佈治具配置在預定的 位置之樣子、（b)爲顯示對處理液供給部供給醇類之樣 子、（c)爲顯示醇類在塗佈面與圖案區域上的脫模劑之 間的間隙擴散之樣子、（d )爲顯示醇類塗佈在脫模劑上 之樣子、（e)爲顯示將醇類與乾燥除去之樣子。 圖1 4係示意地顯示模板處理的各製程之模板的狀態 之說明圖，（a)爲顯示將處理液塗佈治具配置在預定的 位置之樣子、（b)爲顯示對處理液供給部供給了清洗液 之樣子、（c)爲顯示清洗液在塗佈面與圖案區域上的脫 模劑之間的間隙擴散之樣子、（d )爲顯示清洗液塗佈在 脫模劑上之樣子、（e)爲顯示將清洗液予以乾燥除去之 樣子。 圖1 5係其他實施形態之顯示塗佈單元的結構之槪略 的縱斷面圖。 圖1 6係示意地顯示模板處理的各製程之模板的狀態 之說明圖，（a)爲顯示將處理液塗佈治具配置在預定的 位置之樣子、（b )爲顯示對處理液供給部供給了洗淨液 之樣子、（c)爲顯示洗淨液塗在佈面與圖案區域之間的 間隙擴散之樣子、（d )爲顯示洗淨液塗佈在圖案區域上 之樣子、（e)爲顯示將洗淨液予以乾燥除去之樣子。 圖1 7係其他實施形態之顯示處理液塗佈治具的結構 之槪略的縱斷面圖。 -38- 201226160 圖18係其他實施形態之顯示處理液塗佈治具的結構 之槪略的縱斷面圖。 圖1 9係其他實施形態之顯示處理液塗佈治具的結構 之槪略的橫斷面圖。 圖20係其他實施形態之顯示處理液塗佈治具的結構 之槪略的縱斷面圖。 圖21係其他實施形態之顯示處理液塗佈治具的結構 之槪略的縱斷面圖。 圖22係其他實施形態之顯示處理液塗佈治具的結構 之槪略的縱斷面圖。 圖23係顯示具備有本實施形態之模板處理裝置的壓 印系統的結構之槪略的平面圖。 圖24係顯示壓印單元的結構之槪略的縱斷面圖。 圖25係顯示壓印單元的結構之槪略的橫斷面圖。 圖26係顯示壓印處理的各製程之流程圖。 圖27係示意地顯示壓印處理的各製程之模板與晶圓 的狀態之說明圖，（a )爲顯示光阻劑液塗佈在晶圓上之 樣子、（b )爲顯示將晶圓上的光阻劑膜進行光聚合後之 樣子、（c)爲顯示光阻圖案形成在晶圓上之樣子、（d) 爲顯示除去晶圓上的殘存膜之樣子。 【主要元件符號說明】 1 :模板處理裝置 3 0〜3 3 :塗佈單元 -39- 201226160 40 ~ 43 ：洗淨單元 1 1 〇 :處理液塗佈治具 1 1 1 :塗佈面 1 14 :接觸面 1 1 5 :處理空間 1 1 7 : 0形環 120 :處理液供給部 1 21 :第1供給口 122 :第1供給路 1 2 3 :第2供給路 1 4 0 :排氣口 142 :真空泵 150 :氣體噴嘴 2 0 0 :控制部 2 2 0 :第2供給口 2 3 0 :加熱器 240:超音波振動子 241 :超音波振盪裝置 C :轉印圖案 D 1 :圖案區域 D 2 :外側區域 L :醇類 Μ :洗淨液 Ν :清洗液 -40- 201226160 S :脫模劑 T :模板 Tl :表面 Τ2 :裏面The wafer transfer/removal station 311 is provided with a wafer transfer body 322 that can be moved on the transfer path 321 . The wafer is transported between the free wafer 匣C w and the imprinting unit 310 in the vertical direction and the vertical direction (Θ direction). The wafer loading/unloading station 311 is further provided with a pair of alignable directions. Quasi-unit 3 23 . At the alignment unit 323, the direction of the wafer W is adjusted in accordance with the position of the notch portion. The interface station 312 is provided with a template transport body 331 that moves in the X direction. Further, on the side of the conveyance path 330, the inside of the front surface of the template T is arranged to be reversed, and a buffer 匣 333 of a plurality of templates T is disposed on the negative side in the X direction of the conveyance path 330. The template transport body direction and the vertical direction (0 direction) are free to move, 3. The reversing unit 332, the buffer 匣333, the imprint unit 3 board T » at the processing station 3 of the template processing apparatus 1, and the transport I station 3 1 2 On the side, there is disposed 1 1 for collectively accepting the application of the template T. The 匣 mounting can also be moved by the X-direction extension carrier 322 placed in the X-side movement station, and can be moved in the X direction of the wafer W transport path 3 3 0 The reversing unit 3 3 2 is used to temporarily maintain the interface of the module I 20 which can be vertically and can be transferred between the processing stations 1 .. The transfer unit 334 -30- 201226160 The structure of the printing unit 310. As shown in Fig. 24, the imprinting unit 3 10 has a processing container 340' on its side surface, and a loading/unloading port (not shown) in which the template T is formed and a loading/unloading port (not shown) of the wafer W. A wafer holding portion 341 for placing and holding the wafer W is provided on the bottom surface of the processing container 340. The wafer W is placed on the upper surface of the wafer holding portion 341 with its processed surface facing upward. Inside the wafer holding portion 341, a lift pin 3 42 for supporting and lifting the wafer W from below is provided. The lift pin 342 is movable up and down by the lift drive unit 343. A through hole 344 penetrating the upper surface in the thickness direction is formed on the upper surface of the wafer holding portion 341, and the lift pin 342 is formed to be inserted through the through hole 344. Further, the wafer holding portion 341 is movable in the horizontal direction by the moving mechanism 345, which is disposed below the wafer holding portion 341, and is freely rotatable in the vertical direction. As shown in Fig. 25, a rail 3 50 extending in the Y direction (the horizontal direction in Fig. 25) is provided on the side of the wafer holding portion 341 in the negative X direction (the downward direction in Fig. 25). The track 350 is formed, for example, from the outer side in the negative direction (left direction in Fig. 25) of the Y direction of the wafer retaining portion 341 to the outer side in the positive direction (the right direction in Fig. 25) of the γ direction. On the track 350, an arm 351 is mounted. On the arm 351, a photoresist liquid nozzle 352 for supplying a photoresist liquid to the wafer W is supported. The photoresist liquid nozzle 3 52 has an elongated shape which is the same as or longer than the diameter of the wafer W and which is along the X direction. The photoresist liquid nozzle 3 5 2 is formed by, for example, a nozzle of an ink jet method, and a plurality of supply ports (not shown) are formed in a row along the long-hand direction in the lower portion of the photoresist-31 - 201226160 liquid solution nozzle 352. . Further, the photoresist liquid nozzle 3 52 can strictly control the supply timing of the photoresist liquid, the supply amount of the photoresist liquid, and the like. The arm 351 is freely movable on the rail 350 by the nozzle driving portion 353. Thereby, the photoresist liquid nozzle 352 can be moved from the standby portion 354 provided on the outer side in the positive direction of the Y direction of the wafer holding portion 341 to the upper side of the wafer W on the wafer holding portion 341, and The surface of the wafer W is movable in the radial direction of the wafer W. Further, the arm 351 can be freely moved up and down by the nozzle driving portion 353, and the height of the photoresist liquid nozzle 352 can be adjusted. Above the wafer holding portion 341 in the top surface in the processing container 340, as shown in Fig. 24, a template holding portion 3 60 for holding the template T is provided. In other words, the wafer holding portion 341 and the template holding portion 360 are disposed such that the wafer W placed on the wafer holding portion 341 faces the template T held by the template holding portion 360. Further, the template holding portion 3 60 has a chuck 361 for sucking and holding the outer peripheral portion of the inner surface T2 of the template T. The chuck 361 is freely movable in the vertical direction by the moving mechanism 362 provided above the chuck 361, and is freely rotatable around the vertical direction. Thereby, the template Τ can be raised and lowered by rotating the wafer W on the wafer holding portion 341 in a predetermined direction. The template holding portion 360 has a light source 363 which is disposed above the template 保持 held by the chuck 361. Light such as visible light, near-ultraviolet light, ultraviolet light, or the like is emitted from the light source 3 63, and light from the light source 363 can be irradiated downward through the template Τ. The imprint system 300 of this embodiment is constituted by the structure. -32- 201226160 Next, the description will be given regarding the imprint process performed by the imprint system 300. Fig. 26 is a view showing the main processing flow of this imprint process, and Fig. 27 is a view showing the state of the template T and the wafer W of each process of the imprint process. First, the template T is transferred from the template loading/unloading station 2 to the processing station 3 by the template transporting body 12 (process B1 of Fig. 26). At the processing station 3, the surface T! of the template T is sequentially washed (process B2 of Fig. 26), the release agent S is applied to the pattern area Di (process B3 of Fig. 26), and the release agent S is dried ( Process B4) of Fig. 26, the application of the release agent S of the alcohol L toward the pattern region Di (process B5 of Fig. 26), the drying of the alcohol L (the process B6 of Fig. 26), the cleaning liquid N toward In the pattern region D, the application of the release agent S (process B7 of FIG. 26) and the drying of the cleaning liquid N (process B8 of FIG. 26) are performed to form a release agent on the pattern region D of the template T. S. Further, these processes B2 to B8 are the same as the processes A2 to A8 of the above-described embodiment, and detailed description thereof will be omitted. The template T on which the release agent S is formed is transferred to the transfer unit 334. Then, the template T is transported to the inversion unit 332 by the template transport body 331 of the surface station 312, and the inside of the template T is reversed. That is, the inside T2 of the template τ faces upward. Then, the template 搬 is conveyed to the imprint unit 310 by the template transport body 331, and is sucked and held by the chuck 361 of the template holding unit 360. In this way, the processing station 3 performs a predetermined process on the template ,, and while the template is being transported toward the imprinting unit 310, the wafer loading/unloading station 311 is transported by the wafer transfer body 322. The wafer W on the wafer 320 is taken out and transported to the alignment unit 323. Further, in the alignment unit 323, the direction of the wafer W is adjusted in accordance with the position of the notch portion of the wafer W. After -33-201226160, the wafer w is transferred to the imprint unit 310 by the wafer transfer body 322 (process B9 of Fig. 26). Further, in the wafer loading/unloading station 31, the wafer W in the wafer cassette Cw is placed such that the processed surface faces upward, and in this state, the wafer W is transported to the imprinting unit 310. The wafer W carried into the imprint unit 310 is received by the lift pins 342 and placed on the wafer holding portion 341. Next, after the wafer W held by the wafer holding portion 341 is moved to a predetermined position in the horizontal direction and positioned, the resist liquid nozzle 352 is moved toward the radial direction of the wafer W, as shown in Fig. 27 (a). As shown, a photoresist liquid is applied onto the wafer W to form a photoresist film R as a coating film (process B10 of FIG. 26). At this time, the control unit 200 controls the supply timing, the supply amount, and the like of the photoresist liquid supplied from the photoresist liquid nozzle 352. In other words, the photoresist pattern formed on the wafer W is applied in a large amount of photoresist liquid applied to a portion corresponding to the convex portion (a portion corresponding to the concave portion of the transfer pattern C of the template T). On the other hand, the amount of the photoresist liquid applied to the portion corresponding to the concave portion (the portion corresponding to the convex portion of the transfer pattern C) is small. Thus, the photoresist liquid is applied onto the wafer W in response to the aperture ratio of the transfer pattern C. When the photoresist film R is formed on the wafer W, the wafer W held by the wafer holding portion 341 is moved to a predetermined position in the horizontal direction and positioned, and the template T to be held by the template holding portion 3 60 Rotate in the predetermined direction. Further, as shown by the arrow of Fig. 27 (a), the template T is lowered toward the wafer W side. The template T is lowered to a predetermined position, and the surface T of the template T is pressed against the photoresist film R on the wafer W. Further, the predetermined position is set in accordance with the height of the photoresist pattern formed on the wafer W. Then, from -34 to 201226160, light is irradiated from the light source 3 63. As shown in Fig. 27), the light from the light source 3 63 is irradiated onto the photoresist film R on the wafer W through the template T, whereby the photoresist film R is photopolymerized. Thus, the transfer pattern of the template T is transferred onto the photoresist film R on the wafer W, and the photoresist pattern P is formed (process B 1 1 of the drawing). Then, as shown in Fig. 27 (c), the template T is raised to form a photoresist pattern P on the wafer. At this time, since the release agent S is applied to the surface T! of the template T, there is no possibility that the photoresist on the wafer W adheres to the surface of the template T. Then, the wafer W is transferred to the wafer transfer body 322 by the lift pins 342, transferred from the imprint unit 310 to the wafer transfer/inlet 311, and returned to the wafer cassette Cw (process B12 of Fig. 26). In the recessed portion of the photoresist pattern P formed on the wafer W, the residual film L of the thin photoresist may remain. However, for example, it may be external to the stamping system 300, as shown in FIG. 27(d). This residual film L is removed. The above processes B9 to B12 (portions surrounded by the dotted lines in Fig. 26) are repeated, and a resist pattern P is formed on the plurality of wafers W using one template T. During this period, the above-described processes B1 to B8 are repeated to form a film release agent S on the surface of a plurality of templates T. The template 成 having the release agent S formed thereon is stored in the buffer 匣 3 3 3 of the interface station 3 1 2 . When the predetermined number of wafers W are processed Β9 to Β12, the used mold is carried out from the embossing unit 310 by the wafer transfer body 331, and is transferred to the reversing unit 332 (process Β13 of Fig. 26). ). Next, the template cassette in the buffer cassette 333 is transferred to the printing unit 310 by the wafer transfer body 331'. Thereby, the template 内 in the embossing unit 310 is replaced. Then, (b) by the C 26 W table, the package is pressed. -35- 201226160, and the timing of replacing the template T is determined by the deterioration of the template T. Further, even when the wafer w is formed with a different pattern ,, the template 更换 is replaced. For example, the template τ can be used once every time, that is, the template 更换 is replaced. Further, for example, the template 更换 may be replaced for each wafer w, or for example, the template 更换 may be replaced for each batch. The template 搬 that has been transported to the reversing unit 332 is reversed. Then, the template Τ returns to the template 匣C τ by the wafer transfer body 313, the transfer unit 20, and the wafer transfer body 12. As described above, in the imprint system 300, a predetermined photoresist pattern 连续 is continuously formed for a plurality of wafers W while continuously replacing the template Τ. Since the embossing system 300 of the above embodiment has the stencil processing apparatus 1, the squeezing agent S can be formed on the stencil system 300, or the stencil can be continuously supplied to the embossing. Unit 3 1 0. Thereby, for example, in the case where the template Τ is deteriorated or a different photoresist pattern 形成 is formed on the plurality of wafers W, the template 〇 in the embossing unit 3 1 〇 can be continuously and efficiently replaced. Therefore, a predetermined photoresist pattern 能够 can be continuously formed for a plurality of wafers W. Further, by this, it is possible to achieve mass production of a semiconductor device. The preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the above embodiments. It will be apparent to those skilled in the art that various modifications and changes can be made in the scope of the technical scope of the application of the invention, and these modifications and modifications are of course within the scope of the technology of the present invention. The present invention is not limited to this embodiment, and various forms can be employed. The present invention can be applied to a case where the substrate is an FPD (flat panel display - 36 - 201226160 display) other than the wafer, or another substrate such as a mask cover wire. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing the configuration of a stencil processing apparatus according to the present embodiment. Fig. 2 is a side elevational view showing the configuration of the template processing apparatus of the embodiment. Fig. 3 is a side elevational view showing the configuration of the template processing apparatus of the embodiment. Figure 4 is a plan view of the template. Figure 5 is a side view of the template. Fig. 6 is a schematic longitudinal sectional view showing the structure of a coating unit. 7 is a schematic longitudinal cross-sectional view showing the structure of a treatment liquid coating jig, FIG. 8 is a schematic cross-sectional view showing the structure of a treatment liquid coating jig, and FIG. 9 is a view showing a cleaning unit. A schematic longitudinal section of the structure. Figure 10 is a schematic cross-sectional view showing the structure of the washing unit. Figure 11 is a flow chart showing the various processes of the template processing. Fig. 1 is an explanatory view schematically showing a state of a template of each process of the template processing. (a) is a view showing that the treatment liquid coating jig is disposed at a predetermined position. (b) is a display treatment liquid supply portion. The state in which the release agent is supplied, (c) is a state in which the release agent is diffused in the gap between the coated surface and the pattern region' (d) is a pattern showing that the release agent is coated on the pattern region -37-201226160 (e) is a view showing that the release agent is dried. Fig. 13 is an explanatory view schematically showing a state of a template of each process of the template processing, wherein (a) is a view showing that the treatment liquid coating jig is placed at a predetermined position, and (b) is a display treatment liquid supply portion. The state in which the alcohol is supplied, (c) is a state in which the gap between the coated surface and the releasing agent on the pattern region is diffused, and (d) is a state in which the alcohol is coated on the releasing agent, (e) To show the removal of the alcohol and drying. Fig. 14 is an explanatory view schematically showing a state of a template of each process of the template processing, wherein (a) is a view showing that the treatment liquid coating jig is disposed at a predetermined position, and (b) is a display for the treatment liquid supply portion. The state in which the cleaning liquid is supplied, (c) is a state in which the gap between the coating surface and the releasing agent on the pattern area is diffused, and (d) is a state in which the cleaning liquid is applied to the releasing agent. (e) shows how the cleaning solution is dried and removed. Fig. 15 is a schematic longitudinal sectional view showing the structure of a display coating unit of another embodiment. Fig. 16 is an explanatory view schematically showing the state of the template of each process of the template processing, (a) showing the arrangement of the treatment liquid coating jig at a predetermined position, and (b) showing the supply to the treatment liquid. The state in which the cleaning liquid is supplied, (c) the state in which the cleaning liquid is applied to the gap between the cloth surface and the pattern area, and (d) the state in which the cleaning liquid is applied to the pattern area, (e) ) To show the removal of the cleaning solution. Fig. 1 is a schematic longitudinal sectional view showing the structure of a coating liquid coating jig according to another embodiment. -38-201226160 Fig. 18 is a schematic longitudinal sectional view showing the structure of a processing liquid application jig according to another embodiment. Fig. 19 is a schematic cross-sectional view showing the structure of a coating liquid coating jig of another embodiment. Fig. 20 is a schematic longitudinal sectional view showing the structure of a display treatment liquid coating jig according to another embodiment. Fig. 21 is a schematic longitudinal sectional view showing the structure of a coating liquid coating jig according to another embodiment. Fig. 22 is a schematic longitudinal sectional view showing the structure of a coating liquid coating jig according to another embodiment. Fig. 23 is a schematic plan view showing the structure of an imprint system including the template processing apparatus of the embodiment. Figure 24 is a schematic longitudinal sectional view showing the structure of an imprint unit. Figure 25 is a schematic cross-sectional view showing the structure of an imprint unit. Fig. 26 is a flow chart showing the respective processes of the imprint process. Figure 27 is an explanatory view schematically showing the state of the template and the wafer of each process of the imprint process, (a) showing how the photoresist liquid is applied on the wafer, and (b) showing the wafer on the wafer. The photoreceptor film is photopolymerized, (c) is a pattern in which the photoresist pattern is formed on the wafer, and (d) is a state in which the residual film on the wafer is removed. [Explanation of main component symbols] 1 : Template processing apparatus 3 0 to 3 3 : Coating unit - 39 - 201226160 40 ~ 43 : Cleaning unit 1 1 〇: Treatment liquid coating jig 1 1 1 : Coated surface 1 14 : contact surface 1 1 5 : processing space 1 1 7 : 0-ring 120 : processing liquid supply unit 1 21 : first supply port 122 : first supply path 1 2 3 : second supply path 1 4 0 : exhaust port 142 : Vacuum pump 150 : Gas nozzle 2 0 0 : Control unit 2 2 0 : 2nd supply port 2 3 0 : Heater 240 : Ultrasonic vibrator 241 : Ultrasonic oscillation device C : Transfer pattern D 1 : Pattern area D 2: Outer area L: Alcohol Μ : Washing liquid Ν : Cleaning liquid - 40 - 201226160 S : Release agent T : Template Tl : Surface Τ 2 : Inside