JP2013069809A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013069809A JP2013069809A JP2011206551A JP2011206551A JP2013069809A JP 2013069809 A JP2013069809 A JP 2013069809A JP 2011206551 A JP2011206551 A JP 2011206551A JP 2011206551 A JP2011206551 A JP 2011206551A JP 2013069809 A JP2013069809 A JP 2013069809A
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- electrode
- flexible substrate
- semiconductor device
- conductive member
- semiconductor element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】半導体装置は、第1の電極11aおよび信号電極11cが設けられた半導体素子11と、第1の電極11aに接合される導電部材(リードフレーム14)と、少なくとも信号配線15aが形成されると共に、導電部材(リードフレーム14)を第1の電極11aに接合する際に、信号配線15aが信号電極11cに接合するように、導電部材(リードフレーム14)に取り付けられているフレキシブル基板15とを備える。これにより、フレキシブル基板15の接合に際して、導電部材(リードフレーム14)の位置決めを通じてフレキシブル基板15の位置決めが可能となり、半導体素子11に対してフレキシブル基板15を容易に位置決めできる。
【選択図】図1
Description
Claims (8)
- 第1の電極および信号電極が設けられた半導体素子と、
前記第1の電極に接合される導電部材と、
少なくとも信号配線が形成されると共に、前記導電部材を前記第1の電極に接合する際に、前記信号配線が前記信号電極に接合するように、前記導電部材に取り付けられているフレキシブル基板と、
を備える半導体装置。 - 前記導電部材を介して前記第1の電極に接合される第1の電極端子をさらに備え、
前記導電部材が、前記第1の電極および前記第1の電極端子に接合されるリードフレームである、請求項1に記載の半導体装置。 - 少なくとも前記半導体素子の周囲を封止する封止樹脂部をさらに備え、
前記信号電極に接合される前記信号配線が形成された前記フレキシブル基板の一端が、前記封止樹脂部の一端から露出する、請求項1または2に記載の半導体装置。 - 前記第1の電極端子の電位が、前記フレキシブル基板に実装された実装部品の基準電位に等しい、請求項2または3に記載の半導体装置。
- 前記第1の電極に接合される第1の電極端子をさらに備え、
前記導電部材が、前記第1の電極に接合される前記第1の電極端子である、請求項1に記載の半導体装置。 - 前記導電部材が、前記第1の電極に接合されるリードフレームである、請求項1に記載の半導体装置。
- 前記導電部材には、前記半導体素子と前記導電部材との間に前記フレキシブル基板を配置するための空間を形成するために、前記第1の電極の側に突出した凸部が設けられる、請求項1〜6のいずれか一項に記載の半導体装置。
- 前記導電部材が前記フレキシブル基板よりも高い剛性を伴う、請求項1〜7のいずれか一項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011206551A JP5742623B2 (ja) | 2011-09-21 | 2011-09-21 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011206551A JP5742623B2 (ja) | 2011-09-21 | 2011-09-21 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013069809A true JP2013069809A (ja) | 2013-04-18 |
JP5742623B2 JP5742623B2 (ja) | 2015-07-01 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011206551A Expired - Fee Related JP5742623B2 (ja) | 2011-09-21 | 2011-09-21 | 半導体装置 |
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JP (1) | JP5742623B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014038973A (ja) * | 2012-08-20 | 2014-02-27 | Hitachi Automotive Systems Ltd | パワー半導体モジュール |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6171649A (ja) * | 1984-09-17 | 1986-04-12 | Seiko Instr & Electronics Ltd | Icパツケ−ジ |
JPH04146659A (ja) * | 1990-10-08 | 1992-05-20 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH0897255A (ja) * | 1994-09-29 | 1996-04-12 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH10209363A (ja) * | 1997-01-17 | 1998-08-07 | Hitachi Cable Ltd | 半導体装置製造方法およびリードフレーム |
JP2006005612A (ja) * | 2004-06-17 | 2006-01-05 | Shinko Electric Ind Co Ltd | 撮像モジュール |
JP2006332579A (ja) * | 2005-04-28 | 2006-12-07 | Mitsubishi Electric Corp | 半導体装置 |
JP2007201251A (ja) * | 2006-01-27 | 2007-08-09 | Seiko Instruments Inc | 半導体パッケージ及び半導体パッケージの製造方法 |
JP2009224549A (ja) * | 2008-03-17 | 2009-10-01 | Fuji Electric Device Technology Co Ltd | 半導体装置、半導体装置の製造方法及び配線基板 |
-
2011
- 2011-09-21 JP JP2011206551A patent/JP5742623B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6171649A (ja) * | 1984-09-17 | 1986-04-12 | Seiko Instr & Electronics Ltd | Icパツケ−ジ |
JPH04146659A (ja) * | 1990-10-08 | 1992-05-20 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH0897255A (ja) * | 1994-09-29 | 1996-04-12 | Origin Electric Co Ltd | 電力用半導体装置 |
JPH10209363A (ja) * | 1997-01-17 | 1998-08-07 | Hitachi Cable Ltd | 半導体装置製造方法およびリードフレーム |
JP2006005612A (ja) * | 2004-06-17 | 2006-01-05 | Shinko Electric Ind Co Ltd | 撮像モジュール |
JP2006332579A (ja) * | 2005-04-28 | 2006-12-07 | Mitsubishi Electric Corp | 半導体装置 |
JP2007201251A (ja) * | 2006-01-27 | 2007-08-09 | Seiko Instruments Inc | 半導体パッケージ及び半導体パッケージの製造方法 |
JP2009224549A (ja) * | 2008-03-17 | 2009-10-01 | Fuji Electric Device Technology Co Ltd | 半導体装置、半導体装置の製造方法及び配線基板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014038973A (ja) * | 2012-08-20 | 2014-02-27 | Hitachi Automotive Systems Ltd | パワー半導体モジュール |
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