JP2013069730A - Wiring board - Google Patents

Wiring board Download PDF

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JP2013069730A
JP2013069730A JP2011205406A JP2011205406A JP2013069730A JP 2013069730 A JP2013069730 A JP 2013069730A JP 2011205406 A JP2011205406 A JP 2011205406A JP 2011205406 A JP2011205406 A JP 2011205406A JP 2013069730 A JP2013069730 A JP 2013069730A
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conductor
signal
wiring
signal wiring
power supply
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JP5823225B2 (en
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Hisayoshi Wada
久義 和田
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Kyocera SLC Technologies Corp
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Kyocera SLC Technologies Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate

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  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board capable of efficiently transmitting a signal of a superhigh frequency on 30 GHz and over to signal wiring.SOLUTION: A wiring board comprises: a through conductor 3S penetrating through an insulation layer 1; a belt-like signal wiring 2S having a land part L covering the through conductor 3S and arranged on a surface of the insulation layer 1; and a ground conductor 2G or a power supply conductor 2P, which is arranged on the surface of the insulation layer 1 so as to surround a circumference of the signal wiring 2S leaving a predetermined space from the circumference. The signal wiring 2S comprises: a wide part W having a width wider than a diameter of the land part L and a constant space from the ground conductor 2G or the power supply conductor 2P; and a narrow part N connecting the wide part W and the land part L and having a width narrower than the diameter of the land part L and less than one fourth of a wavelength of a signal transmitted through the signal wiring 2S.

Description

本発明は、半導体素子を搭載するための配線基板に関するものである。   The present invention relates to a wiring board for mounting a semiconductor element.

半導体素子を搭載するための小型の配線基板は、複数の絶縁層が積層されて成る絶縁基板の内部および表面に複数の配線導体が配設されているとともに絶縁層を貫通する貫通導体により上下の配線導体同士が接続された多層配線構造をしている。絶縁基板の上面中央部には半導体素子の電極が半田バンプを介して電気的に接続される複数の半導体素子接続パッドが形成されており、絶縁基板の下面には外部電気回路基板の配線導体に半田ボールを介して電気的に接続される外部接続パッドが形成されている。これらの半導体素子接続パッドと外部接続パッドとは、所定のもの同士が絶縁基板の表面および内部に配設された配線導体および貫通導体により互いに電気的に接続されている。   A small-sized wiring board for mounting a semiconductor element has a plurality of wiring conductors disposed inside and on the surface of an insulating substrate formed by laminating a plurality of insulating layers, and has a vertical conductor formed by penetrating conductors penetrating the insulating layer. It has a multilayer wiring structure in which wiring conductors are connected to each other. A plurality of semiconductor element connection pads are formed in the central portion of the upper surface of the insulating substrate to electrically connect the electrodes of the semiconductor element via solder bumps, and the wiring conductor of the external electric circuit substrate is formed on the lower surface of the insulating substrate. External connection pads that are electrically connected via solder balls are formed. These semiconductor element connection pads and external connection pads are electrically connected to each other by wiring conductors and through conductors arranged on the surface and inside of the insulating substrate.

このような配線基板における配線導体は、用途によって信号配線および接地導体および電源導体に機能化されている。このうち信号配線は、絶縁基板の中央部から外周部にかけて延びる帯状のパターンにより構成されており、半導体素子に入出力される電気信号を伝播させるための線路として機能する。また、接地導体および電源導体は、絶縁層上の広い面積を占めるベタパターンにより構成されており、配線基板に搭載される半導体素子に接地電位や電源電位を供給する供給路として機能する。さらにこれらの接地導体および電源導体は、信号配線との間に所定の間隔をあけて配設されることにより、信号配線に所定の特性インピーダンスを付与するとともに信号配線を電磁的にシールドする機能も有している。そして、これらの信号配線および接地導体および電源導体は、各絶縁層を貫通する貫通導体を介してそれぞれ対応する半導体素子接続パッドおよび外部接続パッドに接続されている。   The wiring conductor in such a wiring board is functionalized into a signal wiring, a ground conductor, and a power supply conductor depending on applications. Among these, the signal wiring is composed of a strip-like pattern extending from the central portion to the outer peripheral portion of the insulating substrate, and functions as a line for propagating an electric signal input / output to / from the semiconductor element. In addition, the ground conductor and the power supply conductor are configured by a solid pattern that occupies a large area on the insulating layer, and function as a supply path for supplying a ground potential and a power supply potential to a semiconductor element mounted on the wiring board. Furthermore, these ground conductors and power supply conductors are provided with a predetermined interval between the signal wirings, thereby providing a predetermined characteristic impedance to the signal wirings and a function of electromagnetically shielding the signal wirings. Have. These signal wirings, ground conductors, and power supply conductors are connected to corresponding semiconductor element connection pads and external connection pads, respectively, through through conductors penetrating each insulating layer.

ここで、従来の配線基板における信号配線および接地導体および電源導体の例を図4に示す。図4は、配線基板の内部における特定の層を部分的に示した平面図であり、11が絶縁層、12Sが信号配線、12Gが接地導体、12Pが電源導体である。また、13S、13G、13Pは、図3に示した層の上層から接続される貫通導体の位置を示している。なお、この図における右側が配線基板の中央部側、左側が外周部側に対応している。   Here, FIG. 4 shows examples of signal wirings, ground conductors, and power supply conductors in a conventional wiring board. FIG. 4 is a plan view partially showing a specific layer inside the wiring board, in which 11 is an insulating layer, 12S is a signal wiring, 12G is a ground conductor, and 12P is a power supply conductor. Reference numerals 13S, 13G, and 13P denote positions of through conductors connected from the upper layer of the layer shown in FIG. In the drawing, the right side corresponds to the center side of the wiring board, and the left side corresponds to the outer peripheral side.

図4に示すように、信号配線12Sは、幅が100〜350程度の帯状のパターンであり、配線基板の内部における絶縁層11上を配線基板の中央部から外周部にかけて延びている。信号配線12Sにおける配線基板の中央部側の端部には上層からの貫通導体13Sが接続されている。この信号配線12Sを高速信号が伝播される。信号配線12Sの周囲には、接地導体12Gが信号配線12Sを所定の間隔をあけて取り囲むようにして配設されている。接地導体12Gは、広い面積のベタパターンであり、上層からの貫通導体13Gが多数接続されている。このように接地導体12Gが信号配線12Sを所定の間隔をあけて取り囲むことにより、信号配線12Sに所定の特性インピーダンスが付与されている。電源導体12Pは、この層では円形のランドのみが存在し、接地導体12Gからは所定の間隔をあけて絶縁されている。電源導体12Pに対しては上層からの貫通導体13Pが接続されている。   As shown in FIG. 4, the signal wiring 12 </ b> S is a belt-like pattern having a width of about 100 to 350, and extends on the insulating layer 11 inside the wiring board from the center to the outer periphery of the wiring board. A through conductor 13S from the upper layer is connected to the end of the signal wiring 12S on the center side of the wiring board. A high-speed signal is propagated through the signal wiring 12S. Around the signal wiring 12S, a ground conductor 12G is disposed so as to surround the signal wiring 12S with a predetermined interval. The ground conductor 12G is a solid pattern with a large area, and a large number of through conductors 13G from the upper layer are connected. As described above, the ground conductor 12G surrounds the signal wiring 12S at a predetermined interval, so that a predetermined characteristic impedance is given to the signal wiring 12S. The power supply conductor 12P has only a circular land in this layer, and is insulated from the ground conductor 12G at a predetermined interval. A through conductor 13P from the upper layer is connected to the power supply conductor 12P.

ところで、信号配線12Sと貫通導体13Sとの接続部においては、接地導体12Gとの間に形成される容量成分が大きいものとなる傾向がある。信号配線12Sと貫通導体13Sとの接続部における接地導体12Gとの間の容量成分が大きい場合、信号配線12Sに例えば周波数が10GHz以上の高速信号を伝播させると、信号配線12Sと貫通導体13Sとの接続部において信号が大きく反射して信号の伝送特性が大きく損なわれてしまう。そこで、信号配線12Sと貫通導体13Sとの接続部の近傍において、信号配線12Sの幅を狭くするとともに接地導体12Gとの間隔を狭くすることにより、信号の伝送特性を改善することが行なわれている。   By the way, in the connection part of signal wiring 12S and penetration conductor 13S, there is a tendency for the capacity component formed between grounding conductors 12G to become large. When the capacitance component between the signal conductor 12S and the ground conductor 12G at the connection portion between the through conductor 13S is large and a high-speed signal having a frequency of 10 GHz or more is propagated through the signal line 12S, for example, the signal line 12S and the through conductor 13S The signal is greatly reflected at the connecting portion of the signal, and the signal transmission characteristics are greatly impaired. Accordingly, in the vicinity of the connection portion between the signal wiring 12S and the through conductor 13S, the signal transmission characteristics are improved by narrowing the width of the signal wiring 12S and narrowing the distance from the ground conductor 12G. Yes.

しかしながら、信号配線12Sと貫通導体13Sとを良好に接続するためには、信号配線12Sにおける貫通導体13Sとの接続部に、貫通導体13Sの直径よりも50〜100μm程度大きなランド部Lを設ける必要があり、このランド部Lと接地導体12Gとの間に大きな容量成分が形成される。そこで、信号配線12Sにおける貫通導体13Sとの接続部近傍における信号配線12Sと接地導体12Gとの間隔を拡げることによりこれらの間の容量成分を低減することも考えられる。しかしながら、信号配線12Sに接続される貫通導体13Sの周囲に他の貫通導体13Gや13Pが近接して配設されている場合、信号配線12Sにおける貫通導体13Sとの接続部近傍における信号配線12Sと接地導体12Gとの間隔を拡げることはできない。その結果、信号配線12Sに例えば周波数が30GHz以上の超高速信号を伝播させると、信号配線12Sと貫通導体13Sとの接続部における接地導体12Gとの間の容量成分の過多に起因する特性インピーダンスの低下により信号配線12Sと貫通導体13Sとの接続部における信号の反射が大きくなり、周波数が30GHz以上の超高速信号を良好に伝播させることが困難であった。   However, in order to connect the signal wiring 12S and the through conductor 13S satisfactorily, it is necessary to provide a land portion L that is about 50 to 100 μm larger than the diameter of the through conductor 13S at the connection portion of the signal wiring 12S with the through conductor 13S. A large capacitance component is formed between the land portion L and the ground conductor 12G. Therefore, it is conceivable to reduce the capacitance component between the signal wiring 12S and the ground conductor 12G in the vicinity of the connection portion of the signal wiring 12S with the through conductor 13S by increasing the distance between them. However, when other through conductors 13G and 13P are arranged in the vicinity of the through conductor 13S connected to the signal wiring 12S, the signal wiring 12S in the vicinity of the connection portion of the signal wiring 12S with the through conductor 13S and The interval with the ground conductor 12G cannot be increased. As a result, when an ultrahigh-speed signal having a frequency of, for example, 30 GHz or more is propagated through the signal wiring 12S, the characteristic impedance due to the excessive capacitance component between the signal wiring 12S and the ground conductor 12G at the connection portion of the through conductor 13S. Due to the decrease, the reflection of the signal at the connection portion between the signal wiring 12S and the through conductor 13S is increased, and it is difficult to favorably propagate an ultrahigh-speed signal having a frequency of 30 GHz or more.

特開2003−133814号公報JP 2003-133814 A

本発明の課題は、接地導体または電源導体により所定の間隔をあけて取り囲まれた帯状の信号配線の一端に貫通導体が接続されて成る配線基板において、信号配線と貫通導体との接続部における信号の反射を低減し、信号配線に30GHz以上の超高周波の信号を効率よく伝送させることが可能な配線基板を提供することにある。   An object of the present invention is to provide a signal at a connection portion between a signal wiring and a through conductor in a wiring board in which a through conductor is connected to one end of a strip-shaped signal wiring surrounded by a ground conductor or a power supply conductor at a predetermined interval. It is an object of the present invention to provide a wiring board capable of reducing reflection of light and efficiently transmitting a signal of ultrahigh frequency of 30 GHz or more to a signal wiring.

本発明の配線基板は、絶縁層を貫通する貫通導体と、絶縁層の表面に貫通導体を覆うランド部を有して配設された帯状の信号配線と、絶縁層の表面に信号配線の周囲を所定の間隔をあけて取り囲むように配設された接地導体または電源導体と、を具備して成る配線基板であって、信号配線は、ランド部の直径よりも広い幅で且つ接地導体または電源導体との間隔が一定である幅広部と、幅広部とランド部との間を接続し、ランド部の直径よりも狭い幅で且つ信号配線を伝播する信号の波長の4分の1未満の長さの幅狭部とを有することを特徴とするものである。   The wiring board of the present invention includes a through conductor penetrating the insulating layer, a strip-shaped signal wiring disposed with a land portion covering the through conductor on the surface of the insulating layer, and a periphery of the signal wiring on the surface of the insulating layer. And a grounding conductor or a power supply conductor disposed so as to surround the circuit board at a predetermined interval, wherein the signal wiring has a width wider than the diameter of the land portion and the grounding conductor or the power supply conductor. A wide portion having a constant distance from the conductor, a width between the wide portion and the land portion, a width smaller than the diameter of the land portion, and a length less than a quarter of the wavelength of the signal propagating through the signal wiring And having a narrow width portion.

本発明の配線基板によれば、信号配線における幅広部とランドとの間に、ランドの直径よりも狭い幅で且つ信号配線を伝播する信号の波長の4分の1未満の長さの幅狭部を設けたことから、信号配線と貫通導体との接続部における容量成分の過多に起因する特性インピーダンスの低下を幅狭部により形成されるインダクタンス成分で補完して、信号の反射を抑えることができる。したがって、信号配線に30GHz以上の超高周波数の信号を効率よく伝送させることが可能となる。   According to the wiring board of the present invention, the width between the wide portion of the signal wiring and the land is narrower than the land diameter and less than a quarter of the wavelength of the signal propagated through the signal wiring. Since the part is provided, it is possible to suppress the reflection of the signal by supplementing the decrease in the characteristic impedance caused by the excessive capacitance component at the connection part between the signal wiring and the through conductor with the inductance component formed by the narrow part. it can. Therefore, it is possible to efficiently transmit a signal with an ultrahigh frequency of 30 GHz or more to the signal wiring.

図1は、本発明の配線基板の実施形態の一例を示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing an example of an embodiment of a wiring board according to the present invention. 図2は、本発明の配線基板の実施形態の一例を示す要部概略平面図である。FIG. 2 is a main part schematic plan view showing an example of the embodiment of the wiring board of the present invention. 図3は、本発明の配線基板および従来の配線基板に対応する解析モデルについて電磁界シミュレーターを用いてシミュレーションした結果を示すグラフである。FIG. 3 is a graph showing a result of simulation using an electromagnetic field simulator for an analysis model corresponding to the wiring board of the present invention and the conventional wiring board. 図4は、従来の配線基板の例を示す要部概略平面図である。FIG. 4 is a schematic plan view of an essential part showing an example of a conventional wiring board.

次に、本発明の配線基板における実施形態の一例を図1および図2を基に説明する。図1に示すように、本例の配線基板は、複数の絶縁層1が積層されて成る絶縁基板1Aの表面および各絶縁層1の間に複数の配線導体2が配設されているとともに絶縁層1を貫通する貫通導体3により上下の配線導体2同士が接続された多層配線構造をしている。さらにその上下面には、配線導体2の一部を露出させる開口部を有するソルダーレジスト層4が被着されている。   Next, an example of an embodiment of the wiring board according to the present invention will be described with reference to FIGS. As shown in FIG. 1, the wiring board of this example has a plurality of wiring conductors 2 disposed between a surface of an insulating board 1A formed by laminating a plurality of insulating layers 1 and each insulating layer 1, and is insulated. A multilayer wiring structure is formed in which upper and lower wiring conductors 2 are connected to each other by a through conductor 3 that penetrates through the layer 1. Further, a solder resist layer 4 having an opening for exposing a part of the wiring conductor 2 is deposited on the upper and lower surfaces.

絶縁層1は、例えばガラスクロスにアリル変性ポリフェニレンエーテル樹脂等の熱硬化性樹脂を含浸させた電気絶縁材料から成り、厚みが100〜350μm程度である。このような絶縁層1は、ガラスクロスにアリル変性ポリフェニレンエーテル樹脂およびトリアリルイソシアヌレート等の架橋剤およびパーへキシン25BやパーブチルD・パーブチルP等のジアルキルパーオキサイド類(有機過酸化物)等の重合開始剤から成る熱硬化性樹脂組成物を含浸させた未硬化のプリプレグを準備するとともにそのプリプレグに必要な加工を施した後、複数を積層して熱硬化させることにより形成される。   The insulating layer 1 is made of an electrically insulating material obtained by impregnating a glass cloth with a thermosetting resin such as an allyl-modified polyphenylene ether resin, and has a thickness of about 100 to 350 μm. Such an insulating layer 1 is made of glass cloth with a cross-linking agent such as allyl-modified polyphenylene ether resin and triallyl isocyanurate and dialkyl peroxides (organic peroxide) such as perhexine 25B and perbutyl D / perbutyl P. It is formed by preparing an uncured prepreg impregnated with a thermosetting resin composition composed of a polymerization initiator and applying necessary processing to the prepreg, and then laminating a plurality of the prepregs and thermosetting them.

配線導体2は、例えば銅箔から成り、厚みが5〜20μm程度である。このような配線導体2は、例えばポリエチレンテレフタレート等の樹脂から成る転写用基材シートの表面に銅箔を剥離可能な状態で貼着した後、その銅箔を周知のフォトリソグラフィー技術を用いて所定のパターンにエッチングし、そのエッチングされた銅箔を絶縁層1用のプリプレグの表面にプレスして埋入させた後、転写用機材シートを除去することによって形成される。   The wiring conductor 2 is made of, for example, copper foil and has a thickness of about 5 to 20 μm. Such a wiring conductor 2 is bonded to the surface of a transfer base sheet made of a resin such as polyethylene terephthalate in a state where the copper foil can be peeled off, and then the copper foil is predetermined using a well-known photolithography technique. This pattern is etched, the etched copper foil is pressed and embedded on the surface of the prepreg for the insulating layer 1, and then the transfer equipment sheet is removed.

貫通導体3は、例えば錫と銀とビスマスと銅との合金から成る金属粉末を含む金属ペーストの硬化物から成り、直径が50〜100μm程度である。このような貫通導体3は、例えば、絶縁層1用のプリプレグにレーザ加工により直径が50〜100μm程度の貫通孔を穿孔するとともにその貫通孔内に錫と銀とビスマスと銅との合金から成る金属粉末とトリアリルイソシアヌレート等の液状の架橋剤とを混練した金属ペーストをスクリーン印刷法により充填し、それを絶縁層1用のプリプレグとともに熱硬化させることによって形成される。   The through conductor 3 is made of, for example, a hardened metal paste containing a metal powder made of an alloy of tin, silver, bismuth, and copper, and has a diameter of about 50 to 100 μm. Such a through conductor 3 is formed, for example, by drilling a through hole having a diameter of about 50 to 100 μm in the prepreg for the insulating layer 1 by laser processing, and made of an alloy of tin, silver, bismuth, and copper in the through hole. It is formed by filling a metal paste obtained by kneading a metal powder and a liquid crosslinking agent such as triallyl isocyanurate by a screen printing method and thermally curing it together with the prepreg for the insulating layer 1.

ソルダーレジスト層4は、例えばアクリル変性エポキシ樹脂等の感光性を有する熱硬化性樹脂から成り、厚みが10〜20μm程度である。このようなソルダーレジスト層4は、配線導体2が配設された絶縁基板1Aの上下面に感光性を有する熱硬化性樹脂組成物のペーストを10〜20μmの厚みに塗布するとともに、配線導体2の一部を露出させる開口部を有するように露光および現像した後、熱硬化させることによって形成される。   The solder resist layer 4 is made of a thermosetting resin having photosensitivity such as an acrylic-modified epoxy resin, and has a thickness of about 10 to 20 μm. Such a solder resist layer 4 is formed by applying a photosensitive thermosetting resin composition paste on the upper and lower surfaces of the insulating substrate 1A on which the wiring conductor 2 is disposed to a thickness of 10 to 20 μm and the wiring conductor 2. The film is exposed and developed so as to have an opening that exposes a part of the film, and then thermally cured.

絶縁基板1Aの上面中央部には、半導体素子Sの電極Tが半田バンプを介して接続される複数の半導体素子接続パッド5が例えば格子状に配列されている。半導体素子接続パッド5は、最上層の配線導体2の一部をソルダーレジスト層4の開口部から円形状に露出させることにより形成されており、その直径は50〜100μm程度である。また、絶縁基板1Aの下面には、外部の電気回路基板(不図示)に半田ボールを介して接続される複数の外部接続パッド6が例えば格子状に配列されている。外部接続パッド6は、最下層の配線導体2の一部をソルダーレジスト層4の開口部から円形状に露出させることにより形成されており、その直径は300〜1000μm程度である。そして、これらの半導体素子接続パッド5と外部接続パッド6とは所定のもの同士が配線導体2および貫通導体3を介して互いに電気的に接続されている。   In the central portion of the upper surface of the insulating substrate 1A, a plurality of semiconductor element connection pads 5 to which the electrodes T of the semiconductor elements S are connected via solder bumps are arranged in a grid, for example. The semiconductor element connection pad 5 is formed by exposing a part of the uppermost wiring conductor 2 in a circular shape from the opening of the solder resist layer 4 and has a diameter of about 50 to 100 μm. In addition, on the lower surface of the insulating substrate 1A, a plurality of external connection pads 6 connected to an external electric circuit board (not shown) via solder balls are arranged, for example, in a lattice pattern. The external connection pad 6 is formed by exposing a part of the lowermost wiring conductor 2 in a circular shape from the opening of the solder resist layer 4 and has a diameter of about 300 to 1000 μm. A predetermined number of these semiconductor element connection pads 5 and external connection pads 6 are electrically connected to each other via the wiring conductor 2 and the through conductor 3.

配線導体2は、用途によって信号配線および接地導体および電源導体に機能化されている。このうち信号配線は、絶縁基板1Aの中央部から外周部にかけて延びる帯状のパターンにより構成されており、半導体素子Sに入出力される電気信号を伝播させるための線路として機能する。また、接地導体および電源導体は、絶縁層1上の広い面積を占めるベタパターンにより構成されており、配線基板に搭載される半導体素子Sに接地電位や電源電位を供給する供給路として機能する。さらにこれらの接地導体および電源導体は、信号配線との間に所定の間隔をあけて配設されることにより、信号配線に所定の特性インピーダンスを付与するとともに信号配線を電磁的にシールドする機能も有している。   The wiring conductor 2 is functionalized into a signal wiring, a ground conductor, and a power supply conductor depending on applications. Among these, the signal wiring is configured by a strip-like pattern extending from the central portion to the outer peripheral portion of the insulating substrate 1A, and functions as a line for propagating an electric signal input / output to / from the semiconductor element S. In addition, the ground conductor and the power supply conductor are configured by a solid pattern that occupies a large area on the insulating layer 1 and function as a supply path for supplying a ground potential and a power supply potential to the semiconductor element S mounted on the wiring board. Furthermore, these ground conductors and power supply conductors are provided with a predetermined interval between the signal wirings, thereby providing a predetermined characteristic impedance to the signal wirings and a function of electromagnetically shielding the signal wirings. Have.

ここで、本例における信号配線および接地導体および電源導体の例を図2に示す。図2は、絶縁基板1Aの内部における特定の絶縁層1および配線導体2を部分的に示した平面図であり、2Sが信号配線、2Gが接地導体、2Pが電源導体である。また、3S、3G、3Pは、図2に示した層の上層から接続される貫通導体3の位置を示している。なお、この図における右側が配線基板の中央部側、左側が外周部側に対応している。   Here, FIG. 2 shows an example of the signal wiring, the ground conductor, and the power supply conductor in this example. FIG. 2 is a plan view partially showing a specific insulating layer 1 and wiring conductor 2 inside the insulating substrate 1A. 2S is a signal wiring, 2G is a ground conductor, and 2P is a power supply conductor. Reference numerals 3S, 3G, and 3P denote positions of the through conductors 3 connected from the upper layer of the layer shown in FIG. In the drawing, the right side corresponds to the center side of the wiring board, and the left side corresponds to the outer peripheral side.

図2に示すように、信号配線2Sは、概ね帯状のパターンであり、絶縁基板1Aの内部における絶縁層1上を配線基板の中央部から外周部にかけて延びている。この信号配線2Sを高速信号が伝播される。信号配線2Sにおける絶縁基板1Aの中央部側の端部には円形状のランド部Lが設けられており、このランド部Lに上層からの貫通導体3Sが接続されている。ランド部Lは、その直径が上層からの貫通導体3Sの直径よりも50〜100μm程度大きなものとなっており、上層からの貫通導体3Sの下端を完全に覆うようになっている。   As shown in FIG. 2, the signal wiring 2 </ b> S has a generally band-like pattern, and extends on the insulating layer 1 inside the insulating substrate 1 </ b> A from the central portion to the outer peripheral portion of the wiring substrate. A high-speed signal is propagated through the signal wiring 2S. A circular land portion L is provided at an end of the signal wiring 2S on the central side of the insulating substrate 1A, and a through conductor 3S from an upper layer is connected to the land portion L. The land portion L has a diameter approximately 50 to 100 μm larger than the diameter of the through conductor 3S from the upper layer, and completely covers the lower end of the through conductor 3S from the upper layer.

ランド部Lには、幅狭部Nが接続されている。幅狭部Nは、その幅がランド部Lの直径よりも狭く、ランド部Lの直径の4分の1〜4分の3程度であり、その長さが信号配線2Sを伝播する信号の波長の4分の1未満の長さとなっている。この幅狭部Nは、このように幅がランド部Lの直径の4分の1〜4分の3程度と狭いことから、インダクタンス成分として作用する。   A narrow portion N is connected to the land portion L. The width of the narrow portion N is narrower than the diameter of the land portion L and is about 1/4 to 3/4 of the diameter of the land portion L. The length of the narrow portion N is the wavelength of the signal propagating through the signal wiring 2S. It is less than a quarter of the length. The narrow portion N thus acts as an inductance component because the width is as narrow as about one-fourth to three-fourths of the diameter of the land portion L.

幅狭部Nには幅広部Wが接続されている。幅広部Wは、信号配線2Sの主要部分を占めており、その幅がランド部Lの直径よりも広く、100〜350μm程度の幅となっている。このように信号配線2Sの主要部分である幅広部Wの幅が100〜350μm程度と広いことにより、信号配線2に周波数が30GHz以上の超高周波の信号を大きな減衰なく伝播させることができる。   A wide portion W is connected to the narrow portion N. The wide portion W occupies the main part of the signal wiring 2S, and the width thereof is wider than the diameter of the land portion L and is about 100 to 350 μm. As described above, since the width of the wide portion W, which is the main part of the signal wiring 2S, is as wide as about 100 to 350 μm, an ultrahigh frequency signal having a frequency of 30 GHz or more can be propagated to the signal wiring 2 without significant attenuation.

信号配線2Sの周囲には、接地導体2Gが信号配線2Sを50〜350μmの間隔をあけて取り囲むようにして配設されている。接地導体2Gは広い面積のベタパターンであり、上層からの貫通導体3Gが多数接続されている。このように接地導体2Gが信号配線2Sを所定の間隔をあけて取り囲むことにより、信号配線2Sに所定の特性インピーダンスが付与されている。なお、接地導体2Gと信号配線2Sとの間隔は、絶縁層1の誘電率や厚み、あるいは信号配線2Sの幅や厚み、他の層の導体層2との距離などを勘案して信号配線2Sの特性インピーダンスが所定の値となるように適宜決められる。電源導体2Pは、この層では円形のランドのみが存在し、接地導体2Gからは所定の間隔をあけて絶縁されている。電源導体2Pに対しては上層からの貫通導体3Pが接続されている。   Around the signal wiring 2S, a ground conductor 2G is disposed so as to surround the signal wiring 2S with an interval of 50 to 350 μm. The ground conductor 2G is a solid pattern with a wide area, and a large number of through conductors 3G from the upper layer are connected. As described above, the ground conductor 2G surrounds the signal wiring 2S with a predetermined interval, so that a predetermined characteristic impedance is given to the signal wiring 2S. The distance between the ground conductor 2G and the signal wiring 2S is determined in consideration of the dielectric constant and thickness of the insulating layer 1, the width and thickness of the signal wiring 2S, the distance from the conductor layer 2 of other layers, and the like. The characteristic impedance is appropriately determined so as to have a predetermined value. The power supply conductor 2P has only a circular land in this layer, and is insulated from the ground conductor 2G with a predetermined interval. A through conductor 3P from the upper layer is connected to the power supply conductor 2P.

そして本発明においては、貫通導体3Sが接続されるランド部Lと信号配線2Sの主要部分である幅広部Wとの間に、ランド部Lの直径よりも幅の狭い幅狭部Nが信号配線2Sを伝播する信号の波長の4分の1未満の長さで形成されていることが重要である。このような幅狭部Nが形成されていることにより、ランド部Lおよび貫通導体3Sと接地導体2Gとの間に形成される容量成分の過多による特性インピーダンスの低下を幅狭部Nにより形成されるインダクタンス成分で補完することができる。それにより信号配線2Sに伝播される信号の周波数が30GHz以上の超高周波であったとしても、信号の反射を抑制し、信号配線2Sに信号を効率よく伝播させることができる。また、幅狭部Nの長さが信号配線2Sを伝播する信号の波長の4分の1未満の長さとなっていることから、この幅狭部Nで信号が反射することが有効に防止される。   In the present invention, the narrow portion N narrower than the diameter of the land portion L is between the land portion L to which the through conductor 3S is connected and the wide portion W which is the main portion of the signal wire 2S. It is important that the length of the signal propagating through 2S is less than a quarter of the wavelength. By forming such a narrow portion N, the narrow portion N reduces the characteristic impedance due to the excessive capacitance component formed between the land portion L and the through conductor 3S and the ground conductor 2G. It can be supplemented with an inductance component. Thereby, even if the frequency of the signal propagated to the signal wiring 2S is an ultrahigh frequency of 30 GHz or more, reflection of the signal can be suppressed and the signal can be efficiently propagated to the signal wiring 2S. Further, since the length of the narrow portion N is less than a quarter of the wavelength of the signal propagating through the signal wiring 2S, it is effectively prevented that the signal is reflected by the narrow portion N. The

なお、幅狭部Nの幅がランド部Lの直径の4分の1未満であると、幅狭部Nの正確な形成が困難となり幅狭部Nで信号配線2Sの断線が発生してしまう危険性が大きくなり、4分の3を超えると、幅狭部Nに十分なインダクタンス成分を付与することができなくなる。したがって、幅狭部Nの幅はランド部Lの直径の4分の1〜4分の3の範囲であることが好ましい。また、幅狭部Nの長さが信号配線2Sを伝播する信号の波長の4分の1以上であると、幅狭部Nにおけるインピーダンスの上昇に起因して信号の反射が発生し、信号配線2Sに信号を効率よく伝播させることが困難となる。したがって、幅狭部Nの長さは、信号配線2Sを伝播する信号の波長の4分の1未満に特定される。   If the width of the narrow portion N is less than a quarter of the diameter of the land portion L, it is difficult to accurately form the narrow portion N, and the signal wiring 2S is disconnected at the narrow portion N. When the risk increases and exceeds three-quarters, a sufficient inductance component cannot be applied to the narrow portion N. Therefore, the width of the narrow portion N is preferably in the range of ¼ to ¼ of the diameter of the land portion L. Further, when the length of the narrow portion N is equal to or more than one quarter of the wavelength of the signal propagating through the signal wiring 2S, signal reflection occurs due to an increase in impedance in the narrow portion N, and the signal wiring It becomes difficult to efficiently propagate the signal to 2S. Therefore, the length of the narrow portion N is specified to be less than a quarter of the wavelength of the signal propagating through the signal wiring 2S.

ここで、図2に示した配線基板をモデル化した本発明に対応する解析モデルと、図4に示した配線基板をモデル化した従来技術に対応する解析モデルとを電磁界シミュレーターにより反射特性をシミュレーションした結果を図3に示す。図3において実線で示したグラフが本発明に対応する解析モデルの反射特性であり、破線で示したグラフが従来技術に対応する解析モデルの反射特性である。図3から分かるように、従来技術に対応する解析モデルでは30GHzより低い周波数で反射損が−15dBを超えてしまい、30GHz以上の信号を良好に伝播させることができないことが分かる。これに対し、本発明に対応する解析モデルでは30GHzにおいても反射損が−15dBを大きく下回り、30GHz以上の超高周波信号でも良好に伝播させることが可能である。   Here, an analysis model corresponding to the present invention in which the wiring board shown in FIG. 2 is modeled and an analysis model corresponding to the conventional technique in which the wiring board shown in FIG. The simulation result is shown in FIG. In FIG. 3, the graph indicated by the solid line is the reflection characteristic of the analysis model corresponding to the present invention, and the graph indicated by the broken line is the reflection characteristic of the analysis model corresponding to the prior art. As can be seen from FIG. 3, in the analysis model corresponding to the prior art, the reflection loss exceeds −15 dB at a frequency lower than 30 GHz, and it is understood that a signal of 30 GHz or higher cannot be propagated satisfactorily. On the other hand, in the analysis model corresponding to the present invention, the reflection loss is much less than −15 dB even at 30 GHz, and it is possible to propagate even a very high frequency signal of 30 GHz or higher.

かくして、本発明の配線基板によれば、信号配線と貫通導体との接続部における信号の反射を低減し、信号配線に30GHz以上の超高周波の信号を効率よく伝送させることが可能な配線基板を提供することができる。なお、本発明は上述の実施形態の一例の限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。例えば上述の一例では、信号配線2Sを接地導体2Gが取り囲むように配設していたが、接地導体2Gと電源導体2Pとを入れ替えて、信号配線2Sを電源導体2Pが取り囲むように配設してもよい。   Thus, according to the wiring board of the present invention, there is provided a wiring board capable of reducing signal reflection at the connection portion between the signal wiring and the through conductor and efficiently transmitting a signal of ultrahigh frequency of 30 GHz or more to the signal wiring. Can be provided. The present invention is not limited to an example of the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above example, the signal wiring 2S is disposed so as to be surrounded by the ground conductor 2G. However, the ground conductor 2G and the power supply conductor 2P are replaced, and the signal wiring 2S is disposed so as to be surrounded by the power supply conductor 2P. May be.

1 絶縁層
2S 信号配線
2G 接地導体
2P 電源導体
3 貫通導体
L ランド部
N 幅狭部
W 幅広部
DESCRIPTION OF SYMBOLS 1 Insulation layer 2S Signal wiring 2G Ground conductor 2P Power supply conductor 3 Through conductor L Land part N Narrow part W Wide part

Claims (1)

絶縁層を貫通する貫通導体と、前記絶縁層の表面に前記貫通導体を覆うランド部を有して配設された帯状の信号配線と、前記絶縁層の表面に前記信号配線の周囲を所定の間隔をあけて取り囲むように配設された接地導体または電源導体と、を具備して成る配線基板であって、前記信号配線は、前記ランド部の直径よりも広い幅で且つ前記接地導体または電源導体との間隔が一定である幅広部と、該幅広部と前記ランド部との間を接続し、前記ランド部の直径よりも狭い幅で且つ前記信号配線を伝播する信号の波長の4分の1未満の長さの幅狭部とを有することを特徴とする配線基板。   A penetrating conductor penetrating the insulating layer, a strip-shaped signal wiring disposed with a land portion covering the penetrating conductor on a surface of the insulating layer, and a predetermined periphery around the signal wiring on the surface of the insulating layer A wiring board comprising a grounding conductor or a power supply conductor disposed so as to surround the space, wherein the signal wiring has a width wider than the diameter of the land portion and the grounding conductor or the power supply. A wide portion having a constant distance from the conductor, and a connection between the wide portion and the land portion, a width smaller than the diameter of the land portion and a quarter of the wavelength of the signal propagating through the signal wiring A wiring board having a narrow portion having a length of less than one.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016067908A1 (en) * 2014-10-29 2016-05-06 株式会社村田製作所 Wireless communication module

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JP2004186606A (en) * 2002-12-06 2004-07-02 Sumitomo Metal Electronics Devices Inc Mounting structure of package for high-frequency use
JP2006278780A (en) * 2005-03-29 2006-10-12 Kyocera Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186606A (en) * 2002-12-06 2004-07-02 Sumitomo Metal Electronics Devices Inc Mounting structure of package for high-frequency use
JP2006278780A (en) * 2005-03-29 2006-10-12 Kyocera Corp Semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016067908A1 (en) * 2014-10-29 2016-05-06 株式会社村田製作所 Wireless communication module

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