JP2013055367A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2013055367A JP2013055367A JP2012279956A JP2012279956A JP2013055367A JP 2013055367 A JP2013055367 A JP 2013055367A JP 2012279956 A JP2012279956 A JP 2012279956A JP 2012279956 A JP2012279956 A JP 2012279956A JP 2013055367 A JP2013055367 A JP 2013055367A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- semiconductor
- semiconductor device
- resin layer
- analog cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】半導体装置は、配線基板40と、配線基板40上に実装された第1の半導体素子10と、第1の半導体素子10上に積層され、突出部20bが第1の半導体素子10の外縁から突出する第2の半導体素子20と、各半導体素子を封止する封止樹脂層50と、を備える。そして、第2の半導体素子20はその上面に第1のアナログセル21aとこの第1のアナログセル21aよりも高い温度で発熱しやすい第2のアナログセル21bとを有し、この第2のアナログセル21bは突出部20bを含むように配置される。
【選択図】図1
Description
図1は第1の実施形態に係る積層された半導体素子を有する半導体装置の概略断面図であり、図2は同半導体装置の平面図(上面図)である。
図3は第1の実施形態に係る積層された半導体素子を有する半導体装置の製造プロセスを説明するための概略断面図である。
図5は第2の実施形態に係る積層された半導体素子を有する半導体装置の概略断面図であり、図6は同半導体装置の平面図(上面図)である。第2の実施形態に係る半導体装置は、第1の実施形態に係る半導体装置において第2の半導体素子の突出部が1辺であるのに対して、第2の半導体素子の突出部が4辺である点が大きく異なる。
図7は第3の実施形態に係る積層された半導体素子を有する半導体装置の概略断面図であり、図8は同半導体装置の平面図(上面図)である。第3の実施形態に係る半導体装置は、第2の実施形態に係る半導体装置においてパッド電極が第2の半導体素子と第1の半導体素子とが重畳する領域に配置されているのに対して、パッド電極が第2の半導体素子の突出部に配置されている点が大きく異なる。なお、その他の点は第2の実施形態と同様な構成であるため説明は適宜省略する。
図9は第4の実施形態に係る積層された半導体素子を有する半導体装置の概略断面図であり、図10は同半導体装置の平面図(上面図)である。第4の実施形態に係る半導体装置は、第2の実施形態に係る半導体装置と比較して、第2のアナログセルのパッド電極とボンディングワイヤを介して接続される基板のパッド電極が、第2のアナログセルとこれに対応する封止樹脂層の側壁面との間の領域とは異なる領域に設けられている点が大きく異なる。なお、その他の点は第2の実施形態とほぼ同様な構成であるため説明は適宜省略する。
次に、上述の半導体装置を備えた携帯機器について説明する。なお、携帯機器として携帯電話に搭載する例を示すが、たとえば、個人用携帯情報端末(PDA)、デジタルビデオカメラ(DVC)、及びデジタルスチルカメラ(DSC)といった電子機器であってもよい。
Claims (7)
- 第1の半導体素子と、
前記第1の半導体素子上に積層され、前記第1の半導体素子の外縁から突出している突出部を有する第2の半導体素子と、
を備え、
前記第2の半導体素子は第1の回路領域とこの第1の回路領域よりも高い温度に発熱しやすい第2の回路領域とを有し、この第2の回路領域が前記突出部を含むように配置されており、
前記第2の回路領域は電極部を含み、
前記電極部は前記突出部に配置されていることを特徴とする半導体装置。 - 前記第1の半導体素子および前記第2の半導体素子は、基板上に配置されるとともに、この基板上に形成された樹脂層により封止され、
前記樹脂層は、前記第2の半導体素子の前記第2の回路領域を含む端部とこれに対応する前記樹脂層の側壁面との間隔がそれ以外の端部における間隔よりも短くなるように形成されていることを特徴とする請求項1に記載の半導体装置。 - 前記第1の回路領域に含まれる電極部と基板に設けられている端子とを接続する第1の配線を流れる電流量は、前記第2の回路領域に含まれる電極部と基板に設けられている端子とを接続する第2の配線を流れる電流量よりも小さいことを特徴とする請求項2に記載の半導体装置。
- 前記第2の配線が接続される基板の端子は、前記第2の回路領域を含む端部とこれに対応する前記樹脂層の側壁面との間の領域とは異なる領域に設けられていることを特徴とする請求項3に記載の半導体装置。
- 前記樹脂層は、前記端部とこれに対応する前記樹脂層の側壁面との間隔が、前記第2の半導体素子の上面と前記樹脂層の上面との間隔よりも短くなるように形成されていることを特徴とする請求項2乃至4のいずれかに記載の半導体装置。
- 前記第2の半導体素子は、該第2の半導体素子の複数の辺が前記第1の半導体素子の外縁から突出するように該第1の半導体素子に積層されていることを特徴とする請求項1乃至5のいずれかに記載の半導体装置。
- 前記第1の半導体素子は、前記第2の半導体素子が積層されている側とは反対側の面に、基板と接続される複数の突起電極端子が形成されていることを特徴とする請求項1乃至6のいずれかに記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012279956A JP5431567B2 (ja) | 2007-01-31 | 2012-12-21 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007020683 | 2007-01-31 | ||
JP2007020683 | 2007-01-31 | ||
JP2012279956A JP5431567B2 (ja) | 2007-01-31 | 2012-12-21 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008011473A Division JP5193611B2 (ja) | 2007-01-31 | 2008-01-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013055367A true JP2013055367A (ja) | 2013-03-21 |
JP5431567B2 JP5431567B2 (ja) | 2014-03-05 |
Family
ID=39787192
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008011473A Expired - Fee Related JP5193611B2 (ja) | 2007-01-31 | 2008-01-22 | 半導体装置 |
JP2012279956A Expired - Fee Related JP5431567B2 (ja) | 2007-01-31 | 2012-12-21 | 半導体装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008011473A Expired - Fee Related JP5193611B2 (ja) | 2007-01-31 | 2008-01-22 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP5193611B2 (ja) |
CN (1) | CN101286507B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014204854A1 (de) | 2013-03-18 | 2014-09-18 | Kobelco Cranes Co., Ltd. | Hebbares/senkbares Bauteil |
KR20220114210A (ko) | 2021-02-08 | 2022-08-17 | 경희대학교 산학협력단 | 백수오 추출물을 유효성분으로 포함하는 피부 재생 또는 상처 치료용 조성물 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5535351B1 (ja) * | 2013-03-01 | 2014-07-02 | 株式会社東芝 | 半導体装置 |
JP6081229B2 (ja) | 2013-03-01 | 2017-02-15 | 株式会社東芝 | 半導体装置、無線装置、及び記憶装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05235113A (ja) * | 1992-02-21 | 1993-09-10 | Toshiba Corp | 半導体装置 |
JPH06275752A (ja) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | 半導体装置の冷却装置 |
JP2005150456A (ja) * | 2003-11-17 | 2005-06-09 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2005268533A (ja) * | 2004-03-18 | 2005-09-29 | Shinko Electric Ind Co Ltd | 積層型半導体装置 |
JP2008177241A (ja) * | 2007-01-16 | 2008-07-31 | Toshiba Corp | 半導体パッケージ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001320014A (ja) * | 2000-05-11 | 2001-11-16 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP4554152B2 (ja) * | 2002-12-19 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体チップの作製方法 |
JP2006196709A (ja) * | 2005-01-13 | 2006-07-27 | Sharp Corp | 半導体装置およびその製造方法 |
-
2008
- 2008-01-22 JP JP2008011473A patent/JP5193611B2/ja not_active Expired - Fee Related
- 2008-01-31 CN CN2008101092128A patent/CN101286507B/zh not_active Expired - Fee Related
-
2012
- 2012-12-21 JP JP2012279956A patent/JP5431567B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05235113A (ja) * | 1992-02-21 | 1993-09-10 | Toshiba Corp | 半導体装置 |
JPH06275752A (ja) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | 半導体装置の冷却装置 |
JP2005150456A (ja) * | 2003-11-17 | 2005-06-09 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2005268533A (ja) * | 2004-03-18 | 2005-09-29 | Shinko Electric Ind Co Ltd | 積層型半導体装置 |
JP2008177241A (ja) * | 2007-01-16 | 2008-07-31 | Toshiba Corp | 半導体パッケージ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014204854A1 (de) | 2013-03-18 | 2014-09-18 | Kobelco Cranes Co., Ltd. | Hebbares/senkbares Bauteil |
KR20220114210A (ko) | 2021-02-08 | 2022-08-17 | 경희대학교 산학협력단 | 백수오 추출물을 유효성분으로 포함하는 피부 재생 또는 상처 치료용 조성물 |
Also Published As
Publication number | Publication date |
---|---|
CN101286507A (zh) | 2008-10-15 |
CN101286507B (zh) | 2011-12-21 |
JP5193611B2 (ja) | 2013-05-08 |
JP2008211188A (ja) | 2008-09-11 |
JP5431567B2 (ja) | 2014-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101874057B1 (ko) | 패키지 적층체를 구비한 집적회로 패키지 시스템 및 그 제조 방법 | |
JP5827342B2 (ja) | 中央コンタクトを備え、グラウンド又は電源分配が改善された改良版積層型マイクロ電子アセンブリ | |
KR101941615B1 (ko) | 중앙 콘택 및 향상된 열적 특성을 갖는 향상된 적층형 마이크로전자 조립체 | |
JP5067662B2 (ja) | 装着可能な集積回路パッケージインパッケージシステムおよびその製造方法 | |
KR20110128748A (ko) | 이중 측부 연결부를 구비한 집적회로 패키징 시스템 및 이의 제조 방법 | |
US8385073B2 (en) | Folded system-in-package with heat spreader | |
JP5557204B2 (ja) | 集積回路パッケージシステムおよびその製造システム | |
JP5431567B2 (ja) | 半導体装置 | |
JP4395166B2 (ja) | コンデンサを内蔵した半導体装置及びその製造方法 | |
US7893539B2 (en) | Semiconductor apparatus and mobile apparatus | |
JP4686318B2 (ja) | 半導体装置 | |
JPWO2006100738A1 (ja) | 半導体装置及びその製造方法 | |
JP2002329836A (ja) | 半導体装置および配線フィルム | |
KR100715316B1 (ko) | 유연성 회로 기판을 이용하는 반도체 칩 패키지 실장 구조 | |
JP2008187076A (ja) | 回路装置およびその製造方法 | |
JP4503611B2 (ja) | 半導体装置及びその製造方法 | |
JP3408375B2 (ja) | 半導体装置 | |
KR20080085453A (ko) | 반도체 패키지 및 그 제조 방법 | |
JP2008117937A (ja) | マルチチップモジュールおよびインターポーザ | |
JP2007073593A (ja) | 半導体装置及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130110 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130924 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131204 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5431567 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |