JP2013048171A - Semiconductor device manufacturing method and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits warp of a chip.SOLUTION: A semiconductor device manufacturing method comprises: a lateral face adhesive member formation process of forming a lateral face adhesive member on a lateral face of a chip on which an integrated circuit is provided on a surface; a first adhesion process of pressing the lateral face adhesive member to a chip mounting substrate while pressing the chip to the chip mounting substrate via a rear face adhesive member arranged on a rear face of the chip to adhere the lateral face adhesive member to the chip mounting substrate; and a second adhesion process of heating the rear face adhesive member after the first adhesion process to adhere the chip to the chip mounting substrate.

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device.

  The semiconductor device has a semiconductor chip and a chip mounting substrate on which the semiconductor chip is mounted. The semiconductor chip is bonded to the chip mounting substrate by an adhesive member.

JP 2006-32625 A

  In recent years, semiconductor chips have become thinner with the miniaturization of semiconductor devices and the stacking of semiconductor chips. A semiconductor chip tends to warp when it is thinned. It is difficult to bring such a chip into close contact with the chip mounting substrate, causing problems such as shorting of bonding wires and chip cracks.

  In order to solve the above problem, according to one aspect of the present manufacturing method, a side surface adhesive member forming step for forming a side surface adhesive member on a side surface of a chip on which an integrated circuit is provided on the surface, and a back surface of the chip A first bonding step of pressing the side surface adhesive member against the chip mounting substrate while pressing the chip against the chip mounting substrate via the disposed back surface bonding member to bond the side surface bonding member to the chip mounting substrate; There is provided a method for manufacturing a semiconductor device, comprising: a second bonding step of bonding the chip to the chip mounting substrate by heating the back surface bonding member after the first bonding step.

  According to the embodiment, a method of manufacturing a semiconductor device that suppresses warpage of a thinned chip is provided.

FIG. 10 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device of the first embodiment. FIG. 10 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device of the first embodiment. FIG. 10 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device of the first embodiment. FIG. 10 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device of the first embodiment. It is a block diagram of the chip | tip in which the side surface adhesion member was formed. It is a block diagram of a collet. It is a top view explaining the process shown in FIG. It is process sectional drawing explaining the manufacturing method of the semiconductor device which does not use a side surface adhesion member. It is process sectional drawing explaining the manufacturing method of the semiconductor device which does not use a side surface adhesion member. It is a figure explaining the modification of a side surface adhesion member. It is a figure explaining the modification of a side surface adhesion member. It is a top view explaining the manufacturing method of the side surface adhesion member demonstrated with reference to FIG. It is a bottom view of the modification of a collet. FIG. 10 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device of the second embodiment. FIG. 10 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device of the second embodiment. It is an example of the fragmentary sectional view of a chip.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the technical scope of the present invention is not limited to these embodiments, but extends to the matters described in the claims and equivalents thereof. Note that, even if the drawings are different, corresponding parts are denoted by the same reference numerals, and description thereof is omitted.

(Embodiment 1)
1 to 4 are process cross-sectional views illustrating a method for manufacturing a semiconductor device according to the present embodiment.

(1) Step of forming side surface adhesive member (FIGS. 1A to 1D)
A dicing film 4 is attached to the back surface of a wafer-like semiconductor substrate (for example, a silicon substrate) 2 on which an integrated circuit (not shown) is formed, and then the semiconductor substrate 2 is cut with a blade 6 (FIG. 1). (See (a)). Thereby, a plurality of chips 8 having integrated circuits formed on the surface are formed. The thickness of the chip 8 is, for example, 10 μm or more and 100 μm or less. 1A to 1D show a part of the wafer-like semiconductor substrate 2.

  By cutting the semiconductor substrate 2, a groove 10 having a width substantially the same as that of the blade 6 is formed between the chips 8 (see FIG. 1B). The groove 10 is filled with a paste-like thermosetting adhesive member 12 (for example, a thermosetting resin such as an epoxy resin) by spin coating or vacuum printing, for example.

  The thermosetting adhesive member 12 is heated to form a semi-cured adhesive member 14. The semi-cured adhesive member 14 is an intermediate in the middle of changing a low molecular weight compound contained in the paste-like thermosetting adhesive member into a polymer by heat treatment. The semi-curing adhesive member is a so-called B-stage thermosetting resin formed by heating a thermosetting adhesive member for a short time.

  The central portion of the semi-cured adhesive member 14 is cut with a blade 16 that is narrower than the blade 6 used for cutting the semiconductor substrate 2 as shown in FIG. Thereby, as shown in FIG. 1D, a solid adhesive member 18 (hereinafter referred to as a side adhesive member) is formed on the side surface of the chip 8. As is clear from the above description, the side surface adhesive member 18 is bonded to the side surface of the chip 8.

  FIG. 5A is a plan view of the chip 8 on which the side surface adhesive member 18 is formed. FIG. 5B is a cross-sectional view taken along the line VB-VB in FIG.

  An integrated circuit is formed on the surface 20 of the chip 8 (see FIG. 5B). Further, as shown in FIG. 5A, a plurality of electrode pads 22 are provided on the surface 20 of the chip 8 along the outer periphery of the chip 8. The lower region of the surface 20 is a divided semiconductor substrate 2a.

  Further, a protective film (not shown) such as polyimide is provided on the surface 20 of the integrated circuit. The polyimide film on the electrode pad 22 is removed, and a bonding wire is connected. In the drawings other than FIG. 5B, the surface 20 of the integrated circuit is omitted.

(2) First bonding step (FIGS. 2A to 2C)
Next, as shown in FIG. 2A, a chip mounting substrate (for example, a glass epoxy substrate or a ceramic substrate) 24 is set on a die bonder (not shown). An adhesive member 26 (hereinafter referred to as a back surface adhesive member) is applied to the chip mounting area of the chip mounting substrate 24. The back surface adhesive member 26 is, for example, a paste-like epoxy resin (or acrylic resin, polyimide resin, or the like).

  Next, the chip 8 is removed from the dicing film 4 and adsorbed on the collet 28 of the die bonder as shown in FIG. FIG. 6A is a bottom view of the collet 28. FIG. 6B is a cross-sectional view taken along the line VIB-VIB in FIG.

  As shown in FIG. 6A, the collet 28 has a frame-shaped protrusion 30 and a plurality of protrusions 32 that are in contact with the outer periphery of the frame-shaped protrusion 30. An exhaust port 34 is provided inside the frame-shaped protrusion 30. The air in the frame-shaped protrusion 30 is exhausted from the exhaust port 34. Thereby, the chip 8 is adsorbed to the collet 28. The outer edge of the frame-shaped protrusion 30 is set so as to substantially coincide with the outer edge of the chip 8.

  As shown in FIG. 6B, the protrusion 32 protrudes further than the frame-shaped protrusion 30. As shown in FIG. 2A, the chip 8 is adsorbed to the collet 28 in a state where the side surface adhesive member 18 is in contact with the protrusion 32.

  FIG. 7 is a plan view for explaining the process shown in FIG. FIG. 7A is a view of the chip 8 disposed above the chip mounting substrate 24 by the collet 28. FIG. 7A corresponds to FIG.

  As shown in FIG. 2A and FIG. 7A, the chip 8 is adsorbed by the collet 28 and disposed immediately above the back surface adhesive member 26.

  Next, as shown in FIG. 2B, the chip 8 is pressed against the chip mounting substrate 24 while the collet 28 is heated by the heater 36 incorporated in the die bonder. Thereby, the chip 8 is pressed through the back surface adhesive member 26 disposed on the back surface thereof. At this time, the back surface adhesive member 26 is spread so as to fill between the chip 8 and the chip mounting substrate 24. In addition, the heating temperature of the collet 28 is 100-150 degreeC, for example.

  FIG. 7B shows a state immediately after the chip 8 contacts the chip mounting substrate 24. FIG. 7B corresponds to FIG.

  When the chip 8 is adsorbed by the collet 28, the temperature of the contact portion 38 between the side surface adhesive member 18 and the protrusion 32 increases (see FIG. 7B). Then, the side surface adhesive member 18 of the contact portion 38 is softened, and the tackiness (adhesiveness) is increased. The side adhesive member 18 having improved tackiness is pressed against the chip mounting substrate 24, and the side adhesive member 18 of the contact portion 38 is bonded to the chip mounting substrate 24.

  As a result, the chip 8 is temporarily bonded to the chip mounting substrate 24 via the side surface adhesive member 18. This adhesion is temporary, and the side surface adhesive member 18 is removed before the resin sealing step described later. As is clear from the above description, the pressing of the chip 8 and the pressing of the side surface adhesive member 18 proceed almost simultaneously.

  As shown in FIG. 2 (c), the chip 8 is pressed to a predetermined load and then separated from the collet 28. The pressing time is, for example, 0.5 to 1.0 seconds.

  FIG. 7C shows the chip 8 and the side adhesive member 18 separated from the collet 28. FIG. 7C corresponds to FIG. The side adhesive member 18 is a semi-curable resin. Therefore, when the side surface adhesive member 18 is pressed by the protrusion 32 of the collet 28, it is deformed as shown in FIG.

  FIG. 16 is an example of a partial cross-sectional view of the chip 8. As shown in FIG. 16, the chip 8 includes, for example, a semiconductor element 62 surrounded by an STI (Shallow Trench Isolation) insulating film 60, a plurality of interlayer insulating films 64, and a wiring 66 embedded in the interlayer insulating film 64. And a plug 68.

  The members such as the interlayer insulating film 64 are formed at a high temperature. For this reason, internal stress (hereinafter referred to as in-chip stress) is generated in the chip 8 due to the difference in thermal expansion coefficient between the surface 20 and the semiconductor substrate 2. On the other hand, the thickness of the chip 8 is extremely thin (10 to 100 μm) as described above. For this reason, the chip 8 easily warps due to the stress in the chip.

  In the present embodiment, as shown in FIG. 2C, the chip 8 is temporarily bonded to the chip mounting substrate 24 by the side surface adhesive member 18. For this reason, even after the chip 8 is separated from the collet 28, the shape of the chip 8 is kept flat.

(3) Second bonding step (FIG. 3 (a))
Next, the chip mounting substrate 24 to which the chip 8 is bonded is set in a thermostatic chamber 40 having a heater 36. The back surface adhesive member 26 is heated using the thermostat 40. The heating temperature and the heating time are, for example, about 100 to 150 ° C. and about 2 hours.

  By this heat treatment, the back surface adhesive member 26 is cured. The chip 8 is strongly bonded to the chip mounting substrate 24 by the cured back surface adhesive member 26a.

  During the heat treatment, the side surface of the chip 8 is temporarily bonded to the chip mounting substrate 24 by the side surface adhesive member 18. Therefore, the chip 8 is bonded to the chip mounting substrate 24 while maintaining a flat shape.

(4) Side surface adhesive member peeling step (FIG. 3B)
Next, as shown in FIG. 3B, the side surface adhesive member 18 is peeled from the chip mounting substrate 24 and the chip 8.

(5) Bonding process (FIG. 3C)
Next, an electrode pad (not shown) provided on the surface of the chip mounting substrate 24 and the electrode pad 22 of the chip 8 are connected by a bonding wire 42. Since the chip 8 is flat, the bonding wire 42 and the outer peripheral portion of the chip 8 are not in contact with each other and short-circuiting occurs.

(6) Sealing step and solder ball forming step (FIGS. 4A to 4B)
Thereafter, the chip 8 and the bonding wire 42 are sealed with a mold resin 44. At this time, as shown in FIG. 4A, the mold resin 44 filled in a mold (not shown) is heated in a constant temperature bath 40 to be cured.

  Finally, as shown in FIG. 4B, solder balls 46 are formed on electrode pads (not shown) on the back surface side of the chip mounting substrate 24. The electrode pad on the back surface side is connected to the electrode pad on the front surface side of the chip mounting substrate 24 by a via. Thus, the semiconductor device 37 in which the thinned chip 8 is stored without warping is formed.

(7) Manufacturing Method of Semiconductor Device Without Using Side Adhesive Member FIGS. 8 and 9 are process cross-sectional views illustrating a manufacturing method of a semiconductor device without using the side adhesive member 18.

  First, as shown in FIG. 8A, a paste-like back surface adhesive member 26 is applied to the chip mounting substrate 24. Thereafter, the chip 8 is adsorbed to the collet 28 a and disposed above the back surface adhesive member 26. Here, a collet 28a having no protrusion 32 is used.

  Next, as shown in FIG. 8B, the chip 8 is pressed against the chip mounting substrate 24 through the back surface adhesive member 26. Then, the warped chip 8 becomes substantially flat, and the space between the chip 8 and the chip mounting substrate 24 is filled with the back surface adhesive member 26.

  However, when the chip 8 is separated from the collet 28a, the chip 8 warps again as shown in FIG. At this time, sink marks 48 (spaces) are generated in the back surface adhesive member 26.

  For this reason, in the next bonding step (heating step of the back surface adhesive member), the back surface adhesive member 26 is heated and cured in the constant temperature bath 40 while being warped, as shown in FIG. As a result, the chip 8 is bonded to the chip mounting substrate 24 while being warped.

  As shown in FIG. 9A, the electrode pad 22 of the chip 8 and the electrode pad of the chip mounting substrate 24 are connected to the warped chip 8 by bonding wires 42 as shown in FIG. Then, as shown in the region A, the end of the warped chip 8 and the bonding wire 42 contact or approach each other. As a result, the bonding wire 42 and the integrated circuit are easily short-circuited. Alternatively, as shown in the region B, the bonding wire 42 is easily peeled off from the electrode pad 22.

  Next, as shown in FIG. 9B, the chip 8 and the bonding wire 42 are sealed with a mold resin 44. At this time, the chip mounting substrate 24 on which the chip 8 is mounted is first mounted in a mold (not shown), and the mold resin 44 is filled in the mold. Thereafter, the mold resin 44 is heated and cured.

  When the mold is filled with the mold resin 44, the chip 8 is easily broken above the sink marks 48. For example, when sink mark 48 is confined inside back adhesive member 26, void 52 is formed. On the upper side of the void 52, a force that opposes the pressure that the chip 8 receives from the mold resin 44 does not work. For this reason, the chip 8 is destroyed and a chip crack 50 is generated.

  Finally, as shown in FIG. 9C, solder balls 46 are formed on the electrode pads on the back surface side of the chip mounting substrate 24 to complete the semiconductor device 37a.

  Thus, when the semiconductor device 37a is manufactured without using the side surface adhesive member 18, problems such as shorting of the bonding wire 42, peeling of the bonding wire 42 from the electrode pad, and generation of the chip crack 50 are likely to occur.

  Further, when the semiconductor device 37a is soldered to a printed circuit board or the like, the moisture in the void 52 is exposed to a high temperature and expands to destroy the semiconductor device 37a (so-called popcorn phenomenon).

  These problems are all caused by the warp of the chip 8. According to the present embodiment, as described with reference to FIG. 2, the warpage of the chip 8 is suppressed, so that some or all of these problems are solved.

(8) Modification FIGS. 10 and 11 are diagrams illustrating a modification 18a of the side surface adhesive member.

  As described with reference to FIG. 1, the side adhesive member 18 shown in FIG. 5 arranges the thermosetting resin 12 in the resin arrangement region (groove 10) in contact with the side surface of the chip 8, and this thermosetting resin 12. Is semi-cured to form.

  FIG. 12 is a plan view illustrating a method for manufacturing the side surface adhesive member 18 described with reference to FIG. In the example shown in FIG. 12, the thermosetting resin 12 is arranged in an area (resin arrangement area) surrounding the chip 8. On the other hand, in the manufacturing method of the modified example 18a, as shown in FIG. 10, the thermosetting resin 12 is arranged in a plurality of isolated regions (resin arrangement regions) that respectively surround the four corners of the chip 8. Therefore, as shown in FIG. 11, side surface adhesive members (modified example 18a) are formed at the four corners of the chip 8.

  FIG. 13 is a bottom view of a modified collet 28a. The collet 28 described with reference to FIG. 6 has two protrusions 32 at the four corners of the frame-shaped protrusion 30 as shown in FIG. On the other hand, as shown in FIG. 13, the modified example 28 a has one protrusion 32 at each of the four corners of the frame-shaped protrusion 30.

  In any collet, since the protrusion 32 only presses a part of the side surface adhesive member 18, an excessive back surface adhesive member 26 and an air discharge path are secured. Moreover, since the side surface adhesive member 18 is pressed along the diagonal line of the chip 8, warping of the chip 8 is efficiently suppressed.

(Embodiment 2)
14 and 15 are process cross-sectional views illustrating the method for manufacturing the semiconductor device of the present embodiment. Description of portions common to the first embodiment is omitted.

(1) Forming Step of Side Adhesive Member and Back Adhesive Member First, the side adhesive member 18 is formed on the side surface of the chip 8 by substantially the same process as FIG. Thereafter, a film-like adhesive member 54 (for example, Die Attach Film) is adhered to the back surface of the chip 8 as the back surface adhesive member 26b.

(2) First bonding step (FIGS. 14A to 14C)
First, the chip mounting substrate 24 is mounted on the die bonder. After that, as shown in FIG. 14A, the chip 8 is adsorbed by the collet 28 and disposed above the chip mounting substrate 24.

  Next, as shown in FIG. 14B, the chip 8 is attached via a film-like adhesive member (hereinafter referred to as an adhesive film) 54 while heating the chip mounting substrate 24 with the heater 36 incorporated in the die bonder. The chip mounting substrate 24 is pressed. The pressing time is about 0.5 to 1.0 seconds. At this time, the side surface adhesive member 18 is also pressed against the chip mounting substrate 24 by the protrusion 32, and the side surface adhesive member 18 is bonded to the chip mounting substrate 24. The chip 8 is temporarily bonded to the chip mounting substrate 24 by the side surface adhesive member 18.

  By the way, not only the side surface adhesive member 18 but also the adhesive film (back surface adhesive member) 54 is heated via the chip mounting substrate 24. When the adhesive film (back surface adhesive member) 54 is heated, its tackiness is enhanced. Therefore, the chip 8 is bonded to the chip mounting substrate 24 not only by the side surface adhesive member 18 but also by the adhesive film 54. However, since the heating time is short, it is difficult to prevent the chip 8 from warping only with the adhesive film 54. For this reason, the side surface adhesive member 18 is used.

  In the present embodiment, the collet 28 is not heated. This is to prevent the adhesive film 54 from being heated when the chip 8 is adsorbed to make it difficult to pick up the chip 8.

  When the mounting of the chip 8 is completed, the chip mounting substrate 24 is removed from the die bonder. As a result, the collet 28 is not pressed against the chip 8. However, since the chip 8 is temporarily bonded to the chip mounting substrate 24 by the side surface adhesive member 18, it keeps a flat shape (see FIG. 14C).

(3) Bonding process (FIG. 15A)
Next, as shown in FIG. 15A, the electrode pad 22 of the chip 8 and the electrode pad of the chip mounting substrate are connected by the bonding wire 42 while leaving the side surface adhesive member 18 (see FIG. 15A). .

(4) Sealing step and second bonding step (FIG. 15B)
Next, the chip 8 and the bonding wire 42 are sealed with a mold resin 44 (sealing process). At this time, the mold resin 44 is heated and cured using the thermostat 40.

  At this time, the adhesive film 54 is also heated, and the chip 8 is strongly bonded to the chip mounting substrate 24 (second bonding step).

  The adhesion of the chip 8 by the adhesive film 54 starts with the first adhesion process (FIGS. 14A to 14C) by pressing the adhesive film 54 (FIG. 14B). Thereafter, the bonding of the chip 8 by the adhesive film 54 is temporarily stopped by taking out the chip mounting substrate 24 from the die bonder, but is restarted and completed in the molding resin sealing process.

(5) Solder ball forming step (FIG. 15C)
Finally, as shown in FIG. 15C, solder balls 46 are formed on the back surface side of the chip mounting substrate 24.

  Through the above steps, the semiconductor device 37c including the chip 8 with the integrated circuit provided on the surface, the chip mounting substrate 24 on which the chip 8 is mounted, the back surface adhesive member 26b, and the side surface adhesive member 18 is formed.

  Here, the back surface adhesive member 26 is an adhesive member that is provided on the back surface of the chip 8 and adheres the chip 8 to the chip mounting substrate 24. The side adhesive member 18 is an adhesive member that is provided on the side surface of the semiconductor chip 8 and adheres the chip 8 to the chip mounting substrate 24.

  As described above, the adhesive force of the adhesive film 54 is insufficient to prevent the chip 8 from warping until the sealing step. Therefore, if the side surface adhesive member 18 is not used, when the chip 8 is removed from the collet 28, a part of the adhesive film 54 is peeled off from the chip mounting substrate 24, and the chip 8 is warped. For this reason, as in the first embodiment, various problems such as a short of a bonding wire occur.

  However, according to the present embodiment, since the warpage of the chip 8 is suppressed by the side surface adhesive member 18, all or part of these problems are solved.

  In the present embodiment, the side adhesive member 18 is not removed, but the side adhesive member 18 may be removed as in the first embodiment.

  Moreover, in this Embodiment, the heat processing of the back surface adhesive member 26b is performed simultaneously with the heat processing of mold resin. However, as in the first embodiment, the back surface adhesive member 26b may be heated before the mold resin is heated.

  In the above example, the side surface adhesive member 18 is formed by semi-curing an epoxy resin. However, the raw material of the side surface adhesive member 18 is not limited to an epoxy resin. For example, the side surface adhesive member 18 may be formed from a thermosetting resin other than an epoxy resin. Further, the side surface adhesive member 18 may be formed from a thermoplastic resin (for example, an acrylic resin or ABS (Acrylonitrile Butadiene Styrene) resin). Furthermore, you may form the side surface adhesion member 18 from the epoxy resin prepared so that it may have tackiness at room temperature. In this case, heating of the collet 28 and the chip mounting substrate 24 is not necessary.

  In the above example, the back surface adhesive member is a paste-like epoxy resin or an adhesive film. However, the back surface adhesive member is not limited to these adhesive members. For example, the back surface adhesive member may be a conductive adhesive member such as a silver paste or a thermosetting resin other than an epoxy resin.

  In the above example, the substrate 2 included in the chip 8 is a silicon substrate. However, the substrate 2 may be a substrate other than a silicon substrate. For example, the substrate 2 may be a compound semiconductor substrate such as an SOI (Silicon on Insulator) substrate or a GaAs substrate.

  Regarding the above first and second embodiments, the following additional notes are disclosed.

(Appendix 1)
A step of forming a side surface adhesive member on the side surface of the chip provided with the integrated circuit on the surface;
While pressing the chip against the chip mounting substrate via a back surface bonding member disposed on the back surface of the chip, the side surface bonding member is pressed against the chip mounting substrate to bond the side surface bonding member to the chip mounting substrate. A first bonding step;
A method for manufacturing a semiconductor device, comprising: a second bonding step of heating the back surface bonding member and bonding the chip to the chip mounting substrate after the first bonding step.

(Appendix 2)
In the method for manufacturing a semiconductor device according to attachment 1,
The method for manufacturing a semiconductor device, wherein the side surface adhesive member is removed after the second bonding step.

(Appendix 3)
In the method for manufacturing a semiconductor device according to appendix 1 or 2,
In the step of forming the side surface adhesive member, a thermosetting resin is arranged in a resin arrangement region in contact with the side surface of the chip, and then the thermosetting resin is semi-cured to form the side surface adhesive member on the side surface of the chip. A method for manufacturing a semiconductor device.

(Appendix 4)
In the method for manufacturing a semiconductor device according to attachment 3,
The method for forming a semiconductor device, wherein the resin arrangement region is an isolated region at four corners of the chip or a region surrounding the chip.

(Appendix 5)
In the method for manufacturing a semiconductor device according to any one of appendices 1 to 4,
The method of manufacturing a semiconductor device, wherein the back surface adhesive member is an adhesive member applied to the chip mounting substrate.

(Appendix 6)
In the method for manufacturing a semiconductor device according to any one of appendices 1 to 4,
The back surface adhesive member is a film-like adhesive member adhered to the back surface of the chip,
In the first bonding step, the chip is pressed against the chip mounting substrate while heating the film-like bonding member,
The method for manufacturing a semiconductor device, wherein the bonding of the chip by the film-like adhesive member starts in the first step.

(Appendix 7)
In the method for manufacturing a semiconductor device according to any one of appendices 1 to 6,
The method of manufacturing a semiconductor device, wherein the chip has a thickness of 10 μm to 100 μm.

(Appendix 8)
A chip with an integrated circuit on its surface;
A chip mounting substrate on which the chip is mounted;
A back surface adhesive member that is provided on the back surface of the chip and adheres the chip to the chip mounting substrate;
A semiconductor device comprising: a side adhesive member that is provided on a side surface of the semiconductor chip and adheres the chip to the chip mounting substrate.

8 ... Chip 14 ... Semi-cured adhesive member 18 ... Side side adhesive member 24 ... Chip mounting substrate 26 ... Back side adhesive member 28 ... Collet 37, 37a ... Semiconductor device 54 ...・ Adhesive film

Claims (5)

A step of forming a side surface adhesive member on the side surface of the chip provided with the integrated circuit on the surface;
While pressing the chip against the chip mounting substrate via a back surface bonding member disposed on the back surface of the chip, the side surface bonding member is pressed against the chip mounting substrate to bond the side surface bonding member to the chip mounting substrate. A first bonding step;
A method for manufacturing a semiconductor device, comprising: a second bonding step of heating the back surface bonding member and bonding the chip to the chip mounting substrate after the first bonding step. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the side surface adhesive member is removed after the second bonding step. In the manufacturing method of the semiconductor device according to claim 1 or 2,
In the step of forming the side surface adhesive member, a thermosetting resin is arranged in a resin arrangement region in contact with the side surface of the chip, and then the thermosetting resin is semi-cured to form the side surface adhesive member on the side surface of the chip. A method for manufacturing a semiconductor device. In the manufacturing method of the semiconductor device according to any one of claims 1 to 3,
The method of manufacturing a semiconductor device, wherein the chip has a thickness of 10 μm to 100 μm. A chip with an integrated circuit on its surface;
A chip mounting substrate on which the chip is mounted;
A back surface adhesive member that is provided on the back surface of the chip and adheres the chip to the chip mounting substrate;
A semiconductor device comprising: a side adhesive member that is provided on a side surface of the semiconductor chip and adheres the chip to the chip mounting substrate.

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