JP2013046062A5 - - Google Patents

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Publication number
JP2013046062A5
JP2013046062A5 JP2012170932A JP2012170932A JP2013046062A5 JP 2013046062 A5 JP2013046062 A5 JP 2013046062A5 JP 2012170932 A JP2012170932 A JP 2012170932A JP 2012170932 A JP2012170932 A JP 2012170932A JP 2013046062 A5 JP2013046062 A5 JP 2013046062A5
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JP
Japan
Prior art keywords
light emitting
heterostructure
emitting device
layer
initial surface
Prior art date
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Granted
Application number
JP2012170932A
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English (en)
Japanese (ja)
Other versions
JP2013046062A (ja
JP6069617B2 (ja
Filing date
Publication date
Priority claimed from US13/217,844 external-priority patent/US9064980B2/en
Application filed filed Critical
Publication of JP2013046062A publication Critical patent/JP2013046062A/ja
Publication of JP2013046062A5 publication Critical patent/JP2013046062A5/ja
Application granted granted Critical
Publication of JP6069617B2 publication Critical patent/JP6069617B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012170932A 2011-08-25 2012-08-01 窒化アルミニウム部分を除去した素子 Expired - Fee Related JP6069617B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/217,844 US9064980B2 (en) 2011-08-25 2011-08-25 Devices having removed aluminum nitride sections
US13/217,844 2011-08-25

Publications (3)

Publication Number Publication Date
JP2013046062A JP2013046062A (ja) 2013-03-04
JP2013046062A5 true JP2013046062A5 (enExample) 2015-09-17
JP6069617B2 JP6069617B2 (ja) 2017-02-01

Family

ID=47076081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012170932A Expired - Fee Related JP6069617B2 (ja) 2011-08-25 2012-08-01 窒化アルミニウム部分を除去した素子

Country Status (3)

Country Link
US (1) US9064980B2 (enExample)
EP (1) EP2562826B1 (enExample)
JP (1) JP6069617B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9444224B2 (en) * 2014-12-08 2016-09-13 Palo Alto Research Center Incorporated Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
KR102742153B1 (ko) * 2016-10-21 2024-12-12 삼성전자주식회사 갈륨 질화물 기판의 제조 방법
US10170312B2 (en) * 2017-04-20 2019-01-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor substrate and manufacturing method of the same
WO2019079239A1 (en) * 2017-10-16 2019-04-25 Crystal Is, Inc. ELECTROCHEMICAL REMOVAL OF ALUMINUM NITRIDE SUBSTRATES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES
US10483430B1 (en) 2018-05-01 2019-11-19 Facebook Technologies, Llc Micron-sized light emitting diode designs
US12419142B2 (en) * 2020-09-17 2025-09-16 Nikkiso Co., Ltd. Nitride semiconductor ultraviolet light emitting element

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US5739945A (en) 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
FR2765347B1 (fr) 1997-06-26 1999-09-24 Alsthom Cge Alcatel Reflecteur de bragg en semi-conducteur et procede de fabrication
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
FR2859312B1 (fr) 2003-09-02 2006-02-17 Soitec Silicon On Insulator Scellement metallique multifonction
TW200610150A (en) * 2004-08-30 2006-03-16 Kyocera Corp Sapphire baseplate, epitaxial substrate and semiconductor device
US20070045638A1 (en) * 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region
TWI307175B (en) * 2006-01-11 2009-03-01 Ind Tech Res Inst Non-substrate light emitting diode and fabrication method thereof
US7452739B2 (en) 2006-03-09 2008-11-18 Semi-Photonics Co., Ltd. Method of separating semiconductor dies
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7872272B2 (en) * 2006-09-06 2011-01-18 Palo Alto Research Center Incorporated Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact
US7700962B2 (en) * 2006-11-28 2010-04-20 Luxtaltek Corporation Inverted-pyramidal photonic crystal light emitting device
TWI370555B (en) 2006-12-29 2012-08-11 Epistar Corp Light-emitting diode and method for manufacturing the same
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8110425B2 (en) * 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US20080303033A1 (en) 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
EP2243866A1 (en) 2008-01-16 2010-10-27 National University Corporation Tokyo University of Agriculture and Technology Process for producing laminate comprising al-based group iii nitride single crystal layer, laminate produced by the process, process for producing al-based group iii nitride single crystal substrate using the laminate, and aluminum nitride single crystal substrate
US7960743B2 (en) * 2008-12-05 2011-06-14 Jds Uniphase Corporation Multi-electrode light emitting device
US7749782B1 (en) * 2008-12-17 2010-07-06 Palo Alto Research Center Incorporated Laser roughening to improve LED emissions
US8124993B2 (en) * 2008-12-17 2012-02-28 Palo Alto Research Center Incorporated Selective decomposition of nitride semiconductors to enhance LED light extraction
US8227791B2 (en) * 2009-01-23 2012-07-24 Invenlux Limited Strain balanced light emitting devices
US8178427B2 (en) * 2009-03-31 2012-05-15 Commissariat A. L'energie Atomique Epitaxial methods for reducing surface dislocation density in semiconductor materials
TW201118946A (en) * 2009-11-24 2011-06-01 Chun-Yen Chang Method for manufacturing free-standing substrate and free-standing light-emitting device

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