JP6069617B2 - 窒化アルミニウム部分を除去した素子 - Google Patents

窒化アルミニウム部分を除去した素子 Download PDF

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Publication number
JP6069617B2
JP6069617B2 JP2012170932A JP2012170932A JP6069617B2 JP 6069617 B2 JP6069617 B2 JP 6069617B2 JP 2012170932 A JP2012170932 A JP 2012170932A JP 2012170932 A JP2012170932 A JP 2012170932A JP 6069617 B2 JP6069617 B2 JP 6069617B2
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Japan
Prior art keywords
substrate
aln substrate
heterostructure
layer
light
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Expired - Fee Related
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JP2012170932A
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English (en)
Japanese (ja)
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JP2013046062A5 (enExample
JP2013046062A (ja
Inventor
クリストファー・エル・チュア
ブレント・エス・クルーサー
トーマス・ウンデラー
ノーブル・エム・ジョンソン
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Palo Alto Research Center Inc
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Palo Alto Research Center Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
JP2012170932A 2011-08-25 2012-08-01 窒化アルミニウム部分を除去した素子 Expired - Fee Related JP6069617B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/217,844 US9064980B2 (en) 2011-08-25 2011-08-25 Devices having removed aluminum nitride sections
US13/217,844 2011-08-25

Publications (3)

Publication Number Publication Date
JP2013046062A JP2013046062A (ja) 2013-03-04
JP2013046062A5 JP2013046062A5 (enExample) 2015-09-17
JP6069617B2 true JP6069617B2 (ja) 2017-02-01

Family

ID=47076081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012170932A Expired - Fee Related JP6069617B2 (ja) 2011-08-25 2012-08-01 窒化アルミニウム部分を除去した素子

Country Status (3)

Country Link
US (1) US9064980B2 (enExample)
EP (1) EP2562826B1 (enExample)
JP (1) JP6069617B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9444224B2 (en) * 2014-12-08 2016-09-13 Palo Alto Research Center Incorporated Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
KR102742153B1 (ko) * 2016-10-21 2024-12-12 삼성전자주식회사 갈륨 질화물 기판의 제조 방법
US10170312B2 (en) * 2017-04-20 2019-01-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor substrate and manufacturing method of the same
WO2019079239A1 (en) * 2017-10-16 2019-04-25 Crystal Is, Inc. ELECTROCHEMICAL REMOVAL OF ALUMINUM NITRIDE SUBSTRATES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES
US10483430B1 (en) 2018-05-01 2019-11-19 Facebook Technologies, Llc Micron-sized light emitting diode designs
US12419142B2 (en) * 2020-09-17 2025-09-16 Nikkiso Co., Ltd. Nitride semiconductor ultraviolet light emitting element

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US5739945A (en) 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
FR2765347B1 (fr) 1997-06-26 1999-09-24 Alsthom Cge Alcatel Reflecteur de bragg en semi-conducteur et procede de fabrication
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
FR2859312B1 (fr) 2003-09-02 2006-02-17 Soitec Silicon On Insulator Scellement metallique multifonction
TW200610150A (en) * 2004-08-30 2006-03-16 Kyocera Corp Sapphire baseplate, epitaxial substrate and semiconductor device
US20070045638A1 (en) * 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region
TWI307175B (en) * 2006-01-11 2009-03-01 Ind Tech Res Inst Non-substrate light emitting diode and fabrication method thereof
US7452739B2 (en) 2006-03-09 2008-11-18 Semi-Photonics Co., Ltd. Method of separating semiconductor dies
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7872272B2 (en) * 2006-09-06 2011-01-18 Palo Alto Research Center Incorporated Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact
US7700962B2 (en) * 2006-11-28 2010-04-20 Luxtaltek Corporation Inverted-pyramidal photonic crystal light emitting device
TWI370555B (en) 2006-12-29 2012-08-11 Epistar Corp Light-emitting diode and method for manufacturing the same
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8110425B2 (en) * 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US20080303033A1 (en) 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
EP2243866A1 (en) 2008-01-16 2010-10-27 National University Corporation Tokyo University of Agriculture and Technology Process for producing laminate comprising al-based group iii nitride single crystal layer, laminate produced by the process, process for producing al-based group iii nitride single crystal substrate using the laminate, and aluminum nitride single crystal substrate
US7960743B2 (en) * 2008-12-05 2011-06-14 Jds Uniphase Corporation Multi-electrode light emitting device
US7749782B1 (en) * 2008-12-17 2010-07-06 Palo Alto Research Center Incorporated Laser roughening to improve LED emissions
US8124993B2 (en) * 2008-12-17 2012-02-28 Palo Alto Research Center Incorporated Selective decomposition of nitride semiconductors to enhance LED light extraction
US8227791B2 (en) * 2009-01-23 2012-07-24 Invenlux Limited Strain balanced light emitting devices
US8178427B2 (en) * 2009-03-31 2012-05-15 Commissariat A. L'energie Atomique Epitaxial methods for reducing surface dislocation density in semiconductor materials
TW201118946A (en) * 2009-11-24 2011-06-01 Chun-Yen Chang Method for manufacturing free-standing substrate and free-standing light-emitting device

Also Published As

Publication number Publication date
US9064980B2 (en) 2015-06-23
US20130049005A1 (en) 2013-02-28
EP2562826B1 (en) 2017-06-28
JP2013046062A (ja) 2013-03-04
EP2562826A1 (en) 2013-02-27

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