JP2013035729A - Silicon carbide single-crystal manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a SiC single-crystal manufacturing apparatus capable of further suppressing blocking of an effluent pathway to make a SiC single crystal grow for longer hours.SOLUTION: A purge gas 15 is made to be introduced into the outer circumference of a pedestal 9. The inner diameter of an outer circumference vessel 8b gradually becomes larger as a material gas 3 and the purge gas 15 proceed to the downstream side of a flow direction. As a result, such an effect that the purge gas 15 flows along the inner circumferential surface of the outer circumference vessel 8b can be improved. Accordingly, a SiC polycrystal can be effectively prevented from being deposited in an effluent pathway, achieving such a configuration that a SiC single-crystal manufacturing apparatus 1 can grow an SiC single crystal for longer hours.

Description

  The present invention relates to a silicon carbide (hereinafter referred to as SiC) single crystal manufacturing apparatus.

  Conventionally, as a SiC single crystal manufacturing apparatus, for example, a manufacturing apparatus having a structure shown in Patent Document 1 has been proposed. In this SiC single crystal manufacturing apparatus, a raw material gas introduction port is provided below the seed crystal to introduce a raw material gas from below the seed crystal, and a gas discharge port is provided above the seed crystal and supplied to the seed crystal. By discharging the remainder of the gas and the carrier gas from above the seed crystal, a new source gas is continuously supplied to the seed crystal, and an SiC single crystal is grown. Further, in this SiC single crystal manufacturing apparatus, around the pedestal on which the seed crystal is arranged, the inner diameter of the crucible is made larger than that of the other part to increase the opening area of the discharge port, and a plurality of pedestals and crucibles are attached to the pedestal and the crucible. Holes are provided, and an etching gas is introduced from these holes. As a result, during the growth of the SiC single crystal, it is possible to prevent the SiC polycrystal from being deposited around the pedestal on which the seed crystal is placed and clogging the discharge port, so that the SiC single crystal can be grown for a long time. Yes.

US Patent Application Publication No. 2008/022923

  However, simply introducing etching gas from a plurality of holes provided in the pedestal or crucible can suppress the deposition of SiC polycrystal near the holes, but between the holes and in the upper part of the holes. The deposition of SiC polycrystal cannot be prevented. For this reason, the clogging of the discharge path is not sufficiently suppressed, and the SiC single crystal cannot be sufficiently grown for a long time.

  In view of the above points, an object of the present invention is to provide a SiC single crystal manufacturing apparatus that can further suppress clogging of a discharge path and can grow a SiC single crystal for a long time.

  In order to achieve the above object, according to the first aspect of the present invention, the crucible (8) has a gas outlet (16) for introducing the purge gas (15) to the outer periphery of the pedestal (9), and the pedestal (9). The outer peripheral container (8b) is arranged so as to surround the outer periphery of the base gas, and the purge gas (15) and the source gas ( 3), and the inner diameter of the outer peripheral vessel (8b) is gradually increased toward the downstream side in the flow direction of the purge gas (15).

  In this way, the purge gas (15) is introduced to the outer periphery of the pedestal (9), and the inner diameter of the outer peripheral container (8b) advances toward the downstream side in the flow direction of the source gas (3) and the purge gas (15). It is getting bigger gradually. With such a structure, the effect of the purge gas (15) flowing along the inner peripheral surface of the outer peripheral container (8b) can be enhanced. As a result, it is possible to effectively prevent the SiC polycrystal from being deposited in the discharge path, and the SiC single crystal manufacturing apparatus can be configured to allow the SiC single crystal to grow for a longer time.

  In the invention described in claim 2, the crucible (8) has a gas outlet (16) for introducing the purge gas (15) to the outer periphery of the pedestal (9) and is disposed so as to surround the outer periphery of the pedestal (9). The outer peripheral container (8b) is provided, and the raw material gas (3) is discharged together with the purge gas (15) using a discharge path between the pedestal (9), the outer peripheral surface and the inner peripheral surface of the outer peripheral container (8b). A plurality of holes (8ba) are formed in the inner peripheral surface of the container (8b), and the purge gas (15) flowing along the inner peripheral surface of the outer peripheral container (8b) is also in the plurality of holes (8ba). It is characterized by being able to flow.

  In this way, the purge gas (15) that flows along the inner peripheral surface of the outer peripheral container (8b) is configured to flow also into the plurality of holes (8ba). For this reason, the effect which purge gas (15) flows along the internal peripheral surface of an outer peripheral container (8b) increases. Therefore, similarly to the first aspect of the invention, it is possible to more effectively prevent the SiC polycrystal from being deposited in the discharge path.

  For example, as described in claim 3, if the plurality of holes (8ba) extend obliquely upward from the inner peripheral surface of the outer peripheral container (8b), the purge gas (15) flows more. An easy structure can be obtained.

  The invention according to claim 4 is characterized in that the inner diameter of the outer peripheral vessel (8b) is gradually increased toward the downstream side in the flow direction of the purge gas (15).

  As described above, in the structure in which the plurality of holes (8ba) are formed in the outer peripheral container (8b), the inner diameter of the outer peripheral container (8b) is downstream in the flow direction of the purge gas (15) as in the first aspect of the invention. A structure that gradually increases toward the side can be applied. Thereby, the effect that the purge gas (15) flows along the inner peripheral surface of the outer peripheral container (8b) can be enhanced. Therefore, it is possible to suppress the deposition of SiC polycrystals in the discharge path more effectively.

  In the invention according to claim 5, the crucible (8) has a heating container (8a) connected to the outer peripheral container (8b), and the heating container (8a) has an inner side into which the source gas (3) is introduced. A cylindrical portion (8ab) and an outer cylindrical portion (8ac) disposed on the outer periphery of the inner cylindrical portion (8ab) are provided, and a gap (16) between the inner cylindrical portion (8ab) and the outer cylindrical portion (8ac). Since the gas outlet is configured as described above, the gas outlet is formed in a ring shape that goes around the outer periphery of the pedestal (9).

  As described above, since the gas outlet formed by the gap (16) has a ring shape, the purge gas (15) can be introduced from the entire outer periphery of the base (9). . As a result, it is possible to more effectively prevent the SiC polycrystal from being deposited in the discharge path, and it is possible to obtain the above effect.

  The invention according to claim 6 is characterized in that the inner peripheral surface of the crucible (8) is coated with a refractory metal carbide. Thus, the thermal etching of the crucible (8) can be suppressed by coating the inner peripheral surface of the crucible (8) with the refractory metal carbide.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

It is sectional drawing of the SiC single crystal manufacturing apparatus 1 concerning 1st Embodiment of this invention. It is sectional drawing of the SiC single crystal manufacturing apparatus 1 concerning 2nd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
In FIG. 1, the fragmentary sectional perspective view of the SiC single crystal manufacturing apparatus 1 of this embodiment is shown. Hereinafter, the structure of SiC single crystal manufacturing apparatus 1 will be described with reference to FIG.

  An SiC single crystal manufacturing apparatus 1 shown in FIG. 1 includes an SiC source gas 3 containing Si and C together with a carrier gas through an inlet 2 provided at the bottom (for example, a silane-based gas such as silane and a hydrocarbon such as propane). A SiC single crystal is grown on a seed crystal 5 made of a SiC single crystal substrate disposed in the SiC single crystal manufacturing apparatus 1 by supplying a gas (mixed gas of the system gas) and discharging it through the upper outlet 4 It is.

  The SiC single crystal production apparatus 1 includes a vacuum vessel 6, a heat insulating material 7, a crucible 8, a pedestal 9, a peripheral heat insulating material 10, a rotary pulling gas introduction mechanism 11, and first and second heating devices 12 and 13. Yes.

  The vacuum vessel 6 is made of quartz glass or the like, has a hollow cylindrical shape, can introduce and lead the carrier gas and the source gas 3, and houses other components of the SiC single crystal manufacturing apparatus 1. The structure is such that the internal space in which it is housed can be depressurized by evacuating it. An inlet 2 for the source gas 3 is provided at the bottom of the vacuum vessel 6, and an outlet 4 for the source gas 3 is provided at the top.

The heat insulating material 7 has a cylindrical shape, is disposed coaxially with respect to the vacuum vessel 6, and constitutes a raw material gas introduction passage 7 a by a hollow portion. Further, the heat insulating material 7 is also provided with a purge gas introduction passage 7b configured in an annular shape, for example, and the flow of the purge gas 15 introduced through the purge gas introduction port 14 formed in the bottom surface of the vacuum vessel 6 is widened in the circumferential direction. The structure is such that it can be extended to the base 9 side. The heat insulating material 7 is made of, for example, graphite. If the surface is made of graphite coated with a refractory metal carbide such as TaC (tantalum carbide) or NbC (neodymium carbide), thermal etching is performed. Can also be suppressed. The purge gas 15 is composed of an inert gas such as Ar or He, or an etching gas such as H ₂ or HCl, and is used to dilute the unreacted gas in the source gas 3 to prevent the SiC polycrystal from adhering. Functions as a prevention gas.

  The crucible 8 is configured to include a heating container 8a and an outer peripheral container 8b. The crucible 8 is made of graphite, for example, but if the surface is made of graphite coated with a refractory metal carbide such as TaC (tantalum carbide) or NbC (neodymium carbide), thermal etching is suppressed. You can also

  The heating container 8a constitutes a heating chamber for thermally decomposing the raw material gas 3. In the present embodiment, the heating container 8a has a raw material gas introduction pipe 8aa, an inner cylinder part 8ab, and an outer cylinder part 8ac. Has been.

  The source gas introduction pipe 8aa is formed of a cylindrical member having a hollow portion, and is disposed in a source gas introduction passage 7a formed in the heat insulating material 7. The source gas 3 is introduced into the crucible 8 through the source gas introduction pipe 8aa. The raw material gas introduction pipe 8aa is a flange portion whose outer diameter is enlarged on the base 9 side. The flange portion projects outside the heat insulating material 7 and extends to the position of the inner peripheral side end portion of the purge gas introduction passage 7b. Has been. That is, the heat insulating material 7 is covered by the crucible 8 so that the heat insulating material 7 is not exposed to the heating chamber side.

  The inner cylinder portion 8ab is formed of a cylindrical member having a hollow portion, for example. The hollow portion of the inner cylindrical portion 8ab communicates with the hollow portion of the source gas introduction pipe 8aa, and allows the source gas 3 introduced through the source gas introduction pipe 8aa to pass therethrough. A heating chamber is constituted by the hollow portion of the inner cylindrical portion 8ab. In this embodiment, the inner cylinder part 8ab is installed on the flange part in the raw material gas introduction pipe 8aa, and the outer diameter of the inner cylinder part 8ab and the outer diameter of the flange part are the same. The inner cylindrical portion 8ab and the raw material gas introduction pipe 8aa are coaxially arranged so that the outer peripheral surface of the inner cylindrical portion 8ab and the outer peripheral surface of the flange portion are matched.

  The outer cylinder portion 8ac has a shape corresponding to the inner cylinder portion 8ab, and is formed of a cylindrical member having a hollow portion, for example. The inner cylinder part 8ab is arranged in the hollow part of the outer cylinder part 8ac, and the outer cylinder part 8ac and the inner cylinder part 8ab are arranged concentrically by matching the central axes thereof. The inner diameter of the outer cylinder part 8ac is set to be a predetermined dimension larger than the outer diameter of the inner cylinder part 8ab, and a predetermined gap 16 is formed between the outer cylinder part 8ac and the inner cylinder part 8ab. . The gap 16 is communicated with the purge gas introduction passage 7b of the heat insulating material 7. With this gap 16 as a part of the purge gas introduction passage, the purge gas 15 introduced from the purge gas introduction passage 7b is guided to the outer peripheral portion of the base 9, and the gap 16 The purge gas 15 is introduced using the tip of the gas as a gas jet port. The inner diameter of the outer cylindrical portion 8ac is made to coincide with the outer diameter of the purge gas introduction passage 7b of the heat insulating material 7. For this reason, the gap 16 and the purge gas introduction passage 7b have the same width. And since such a clearance gap 16 is comprised in the whole region between the inner side cylinder part 8ab and the outer side cylinder part 8ac, it has the ring-shaped shape where the gas jet port which introduces the purge gas 15 goes around the outer periphery of the base 9. Become.

  On the other hand, the outer peripheral container 8b is disposed so as to surround the outer periphery of the base 9. The outer peripheral container 8b has a cylindrical shape having a hollow portion, and the outer diameter is constant, but the inner diameter is gradually increased as the material gas 3 and the purge gas 15 flow downstream in the flow direction. . For this reason, a taper surface is formed by the inner peripheral surface of the outer peripheral container 8b, and the cross-sectional areas of the flow paths of the source gas 3 and the purge gas 15 gradually increase. Further, at the end of the outer peripheral container 8b closest to the heating container 8a, the inner diameter is matched with the inner diameter of the outer cylinder part 8ac, and the outer diameter is matched with the outer diameter of the outer cylinder part 8ac. For this reason, the inner peripheral surface of the outer peripheral container 8b and the inner peripheral surface of the outer cylindrical portion 8ac are continuously connected without a step, and the outer peripheral surface of the outer peripheral container 8b and the outer peripheral surface of the outer cylindrical portion 8ac are continuously connected without a step. It is in a state.

  The pedestal 9 is a disk-shaped member arranged coaxially with the central axis of the heating vessel 8a, and the surface of the seed crystal 5 is attached to the surface of the seed crystal 5 by attaching the seed crystal 5 downward with one surface of the heating chamber side as an attachment surface. A single crystal is grown. The pedestal 9 is supported at a desired position by connecting a pipe material 11a to be described later to one surface opposite to the mounting surface of the seed crystal 5. This pedestal 9 is also made of graphite, for example. If the surface is made of graphite coated with a refractory metal carbide such as TaC (tantalum carbide) or NbC (neodymium carbide), thermal etching can be performed. It can also be suppressed.

  The outer peripheral heat insulating material 10 is disposed between the outer peripheral surface of the crucible 8 and the inner peripheral surface of the vacuum vessel 6 so as to surround the outer periphery of the crucible 8. With this outer peripheral heat insulating material 10, heat insulation between the crucible 8 and the vacuum vessel 6 is performed, and the crucible 8 is kept warm.

  The rotary pulling gas introduction mechanism 11 rotates and pulls up the pedestal 9 via the pipe material 11a. One end of the pipe material 11 a is connected to one surface of the pedestal 9 opposite to the mounting surface of the seed crystal 5, and the other end is connected to the main body of the rotary pulling gas introduction mechanism 11. The pipe material 11a is made of, for example, SUS or graphite. However, if the surface is made of graphite coated with a refractory metal carbide such as TaC (tantalum carbide), thermal etching is suppressed. You can also. With such a configuration, the pedestal 9, the seed crystal 5 and the SiC single crystal can be rotated and pulled together with the pipe material 11a, and the SiC single crystal can be grown while maintaining the desired temperature distribution on the SiC single crystal. Along with this, the temperature of the growth surface can always be adjusted to a temperature suitable for growth.

  The first and second heating devices 12 and 13 are constituted by induction heating coils and heaters, and are arranged so as to surround the vacuum vessel 6. These 1st, 2nd heating apparatuses 12 and 13 are comprised so that temperature control can be carried out independently, respectively. For this reason, finer temperature control can be performed. The 1st heating apparatus 12 is arrange | positioned in the position corresponding to the heating container 8a. The 2nd heating apparatus 13 is arrange | positioned in the position corresponding to the base 9 and the outer periphery container 8b. Due to such an arrangement, the temperature distribution on the growth surface of the SiC single crystal can be adjusted to a temperature suitable for the growth of the SiC single crystal by controlling the first and second heating devices 12 and 13.

  With this structure, the SiC single crystal manufacturing apparatus 1 according to the present embodiment is configured. Then, the manufacturing method of the SiC single crystal using the SiC single crystal manufacturing apparatus 1 concerning this embodiment is demonstrated.

  First, after attaching the seed crystal 5 to the pedestal 9, the first and second heating devices 12 and 13 are controlled to give a desired temperature distribution. That is, the source gas 3 is recrystallized on the surface of the seed crystal 5 so that the SiC single crystal grows and the sublimation rate becomes higher than the recrystallization rate in the heating vessel 8a. To do.

In addition, the source gas 3 is introduced through the source gas introduction pipe 8aa while introducing a carrier gas using an inert gas such as Ar or He, or an etching gas such as H ₂ or HCl, if necessary, while maintaining the vacuum vessel 6 at a desired pressure. To do. Thereby, as shown by the broken line arrow in FIG. 1, the source gas 3 flows and is supplied to the seed crystal 5 so that a SiC single crystal can be grown. Then, the unreacted gas in the raw material gas 3 is caused to flow upward through the discharge path between the outer periphery of the base 9 and the inner peripheral surface of the crucible 8 and is discharged through the outlet 4.

At the same time, a purge gas 15 composed of an inert gas such as Ar or He or an etching gas such as H ₂ or HCl is introduced from the purge gas inlet 14. For this reason, the purge gas introduction passage 7b of the heat insulating material 7 and the gap 16 between the inner cylinder portion 8ab and the outer cylinder portion 8ac are used as a purge gas introduction path, and the purge gas 15 is transferred to the base 9 as shown by the solid line arrow in FIG. It is introduced into the outer peripheral part. As a result, the unreacted gas in the raw material gas 3 is diluted by the purge gas 15 at the outer peripheral portion of the pedestal 9 and discharged from the outlet 4 using the discharge path between the outer peripheral surface of the pedestal 9 and the inner peripheral surface of the crucible 8. In doing so, it is possible to suppress the deposition of SiC polycrystals in the discharge path.

  In the present embodiment, the inner diameter of the outer peripheral container 8b gradually increases as the raw material gas 3 and the purge gas 15 move downstream in the flow direction. The effect of flowing along is increased. Specifically, since the diameter of the inner peripheral surface of the outer peripheral container 8b is gradually increased, the resistance of the flow of the raw material gas 3 and the purge gas 15 hardly occurs, and the purge gas 15 is attracted so that the purge gas 15 is It becomes easy to flow along the inner peripheral surface of the container 8b. For this reason, it becomes possible to suppress that a SiC polycrystal accumulates on a discharge route more effectively.

  As described above, according to the SiC single crystal manufacturing apparatus 1 of the present embodiment, the purge gas 15 is introduced to the outer periphery of the base 9. Then, by making the inner diameter of the outer peripheral container 8b gradually increase toward the downstream side in the flow direction of the raw material gas 3 and the purge gas 15, the effect that the purge gas 15 flows along the inner peripheral surface of the outer peripheral container 8b is obtained. I try to increase it. As a result, it is possible to effectively prevent the SiC polycrystal from being deposited in the discharge path, and the SiC single crystal manufacturing apparatus 1 can be configured to allow the SiC single crystal to grow for a longer time.

  Further, in the present embodiment, the gas outlet formed by the gap 16 is formed in a ring shape, so that the purge gas 15 can be introduced from the entire outer periphery of the base 9. As a result, it is possible to more effectively prevent the SiC polycrystal from being deposited in the discharge path, and it is possible to obtain the above effect.

(Second Embodiment)
A second embodiment of the present invention will be described. In this embodiment, the structure of the crucible 8 is changed with respect to the first embodiment, and the other parts are the same as those in the first embodiment, and therefore only different parts will be described.

  FIG. 2 is a cross-sectional view of the SiC single crystal manufacturing apparatus 1 according to the present embodiment. As shown in this figure, in this embodiment, the structure of the crucible 8 is changed with respect to the first embodiment. Specifically, the configuration of the outer peripheral container 8b is changed, and instead of gradually changing the inner diameter of the outer peripheral container 8b as in the first embodiment, a plurality of holes 8ba are formed on the inner peripheral surface of the outer peripheral container 8b. In addition, a communication passage 8bb that connects the plurality of holes 8ba is formed inside the outer peripheral container 8b.

  A plurality of holes 8ba are arranged at equal intervals along the circumferential direction around the central axis of the crucible 8, and a plurality of holes 8ba are also arranged at equal intervals in the direction of the central axis of the crucible 8. Each hole 8ba is extended so as to extend in the downstream direction and the radial direction in the flow direction of the source gas 3 and the purge gas 15, that is, obliquely upward from the inner peripheral surface of the outer peripheral container 8b. Each hole 8ba is connected to the communication passage 8bb inside the outer peripheral container 8b. The communication passage 8bb is formed at a position corresponding to each hole 8ba. For example, a plurality of communication passages 8bb are formed along the central axis of the crucible 8.

  In the SiC single crystal manufacturing apparatus 1 configured as described above, when the purge gas 15 is introduced through the gap 16 between the inner cylinder portion 8ab and the outer cylinder portion 8ac, the purge gas 15 is generated along the inner circumference of the outer peripheral container 8bb. It is made to flow, and it is made to flow also in each hole 8ba. For this reason, the effect that the purge gas 15 flows along the inner peripheral surface of the outer peripheral container 8b is enhanced. Therefore, as in the first embodiment, it is possible to more effectively prevent the SiC polycrystal from being deposited on the discharge path.

(Other embodiments)
The specific structure of the SiC single crystal manufacturing apparatus 1 shown in the above embodiments is merely an example, and the shape, material, and the like can be changed as appropriate.

  For example, in the first embodiment, the crucible 8 is configured by the heating container 8a and the outer peripheral container 8b, and the heating container 8a is configured to include the source gas introduction pipe 8aa, the inner part 8ab, and the outer cylinder part 8ac. These may be an integral structure, or a part of them may be an integral structure. Moreover, although the raw material gas introduction pipe 8aa has a structure provided with a flange portion, the raw material gas introduction pipe 8aa is simply used as the raw material gas of the heat insulating material 7 by forming the inner cylindrical portion 8ab as a bottomed cylindrical member having an open center. You may use as a member for covering the inner wall of the introduction path | route 7b. In this case, the source gas introduction pipe 8aa is eliminated, and the inner peripheral surface of the source gas introduction path 7b of the heat insulating material 7 is coated with a refractory metal carbide such as TaC (tantalum carbide) or NbC (neodymium carbide). good. Moreover, you may comprise the flange part of source gas introduction pipe | tube 8aa as a plate-shaped member which a center part opens. In the case where the inner cylindrical portion 8ab and the outer cylindrical portion 8ac are integrated, a member that partially connects the inner cylindrical portion 8ab and the outer cylindrical portion 8ac instead of the gap 16 is disposed. That's fine.

  In addition, although the case where the seed crystal 5 and the pedestal 9 are disk-shaped has been described, these are not necessarily disk-shaped and may be other shapes such as a square.

  Further, in contrast to the structure in which the outer peripheral container 8b is provided with a plurality of holes 8ba and communication passages 8bb as in the second embodiment, the inner diameter of the outer peripheral container 8b is the flow direction of the purge gas 15 as in the first embodiment. A structure that is gradually increased toward the downstream side may be combined.

  Further, the present invention can be applied to both the induction heating method and the direct heating method for all the above embodiments.

DESCRIPTION OF SYMBOLS 1 SiC single crystal manufacturing apparatus 3 Raw material gas 5 Seed crystal 8 Crucible 8a Heating container 8aa Raw material gas introduction pipe 8ab Inner cylinder part 8ac Outer cylinder part 8b Outer container 8ba Hole 8bb Communication path 9 Base 12, 13 1st, 2nd heating apparatus 15 Purge gas

Claims (6)

A pedestal (9) to which a seed crystal (5) made of a silicon carbide single crystal substrate is attached is disposed in a cylindrical crucible (8) for growing a silicon carbide single crystal, and is attached to the pedestal (9). Further, by supplying the silicon carbide source gas (3) from below the seed crystal (5), the silicon carbide single crystal is grown on the surface of the seed crystal (5), and the source gas (3) In the silicon carbide single crystal manufacturing apparatus, the unreacted gas is discharged as a discharge path between the inner peripheral surface of the crucible (8) and the outer peripheral surface of the pedestal (9).
The crucible (8) has a gas outlet (16) for introducing a purge gas (15) to the outer periphery of the pedestal (9), and an outer peripheral container (8b) arranged so as to surround the outer periphery of the pedestal (9). ), The raw material gas (3) is discharged together with the purge gas (15) as a discharge path between the pedestal (9), the outer peripheral surface and the inner peripheral surface of the outer peripheral container (8b), The silicon carbide single crystal manufacturing apparatus, wherein the inner diameter of the vessel (8b) is gradually increased toward the downstream side in the flow direction of the purge gas (15). A pedestal (9) to which a seed crystal (5) made of a silicon carbide single crystal substrate is attached is disposed in a cylindrical crucible (8) for growing a silicon carbide single crystal, and is attached to the pedestal (9). Further, by supplying the silicon carbide source gas (3) from below the seed crystal (5), the silicon carbide single crystal is grown on the surface of the seed crystal (5), and the source gas (3) In the silicon carbide single crystal manufacturing apparatus, the unreacted gas is discharged as a discharge path between the inner peripheral surface of the crucible (8) and the outer peripheral surface of the pedestal (9).
The crucible (8) has a gas outlet (16) for introducing a purge gas (15) to the outer periphery of the pedestal (9), and an outer peripheral container (8b) arranged so as to surround the outer periphery of the pedestal (9). ), The raw material gas (3) is discharged together with the purge gas (15) as a discharge path between the pedestal (9), the outer peripheral surface and the inner peripheral surface of the outer peripheral container (8b), A plurality of holes (8ba) are formed in the inner peripheral surface of the container (8b), and the purge gas (15) flowing along the inner peripheral surface of the outer peripheral container (8b) is formed in the plurality of holes (8ba). An apparatus for producing a silicon carbide single crystal, characterized in that the silicon carbide single crystal manufacturing apparatus is also allowed to flow inside.   The silicon carbide single crystal manufacturing apparatus according to claim 2, wherein the plurality of holes (8ba) extend obliquely upward from an inner peripheral surface of the outer peripheral container (8b).   The silicon carbide single crystal manufacturing apparatus according to claim 2 or 3, wherein an inner diameter of the outer peripheral vessel (8b) is gradually increased toward a downstream side in the flow direction of the purge gas (15).   The crucible (8) has a heating container (8a) connected to the outer peripheral container (8b), and the heating container (8a) includes an inner cylinder part (8ab) into which the source gas (3) is introduced. An outer cylinder portion (8ac) disposed on the outer periphery of the inner cylinder portion (8ab), and the gas in the gap (16) between the inner cylinder portion (8ab) and the outer cylinder portion (8ac). 5. The gas outlet according to claim 1, wherein the gas outlet is formed in a ring shape that goes around the outer periphery of the pedestal (9). Silicon carbide single crystal manufacturing equipment.   6. The silicon carbide single crystal manufacturing apparatus according to claim 1, wherein the inner peripheral surface of the crucible (8) is coated with a refractory metal carbide.

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