JP4941475B2 - Manufacturing method of silicon carbide single crystal and manufacturing apparatus suitable therefor - Google Patents

Description

  The present invention relates to a SiC single crystal manufacturing method for manufacturing a SiC single crystal by supplying a raw material gas to a seed crystal composed of a silicon carbide (hereinafter referred to as SiC) single crystal, and a manufacturing apparatus suitable for the method. Is.

  Conventionally, as a technique for growing a SiC single crystal by supplying a source gas to a seed crystal, there are those shown in Patent Documents 1 to 3.

  Specifically, in Patent Document 1, a raw material gas is supplied into a reaction vessel having an inlet having an opening at the center of the bottom surface and an outlet having an opening at the top surface, and the seed crystal disposed on the center of the outlet Discloses a structure for growing a SiC single crystal.

  Patent Documents 2 and 3 include a heating container having an inlet having an opening at the center of the bottom surface and an outlet having an opening at the upper surface, and a reaction container having an opening at the lower surface. A structure in which is introduced into the reaction vessel is disclosed. In such a structure, the source gas is supplied to the seed crystal disposed on the bottom surface of the reaction vessel through the outlet, and the source gas is further flowed through the outer periphery of the reaction vessel from the gap between the heating vessel and the reaction vessel.

JP 2002-154898 A JP 2003-306398 A JP 2004-311649 A

  However, in the structure disclosed in Patent Document 1, most of the raw material gas that has not contributed to crystal growth in the crucible (hereinafter referred to as unreacted raw material gas) is discharged outside the crucible, and the yield of the raw material gas (raw material gas) There is a problem in that the amount of SiC single crystal obtained with respect to the supply amount of (a) is reduced. There is also a problem that unreacted source gas is recrystallized as SiC polycrystal at the crucible outlet, causing clogging at the crucible outlet.

  On the other hand, in the structures disclosed in Patent Documents 2 and 3, since the source gas supply path is reversed by the reaction vessel, the source gas can be discharged from the high temperature portion of the crucible, and clogging at the crucible outlet can be prevented. it can. However, even with such a structure, it is the same that most of the unreacted source gas is discharged out of the crucible, and there is a problem that the yield of the source gas is lowered as described above.

  In view of the above points, the first object of the present invention is to provide an SiC single crystal manufacturing method capable of improving the yield of the raw material gas and a manufacturing apparatus suitable therefor. It is a second object of the present invention to provide a SiC single crystal manufacturing method capable of improving the yield of raw material gas and suppressing clogging and a manufacturing apparatus suitable therefor.

  In order to achieve the above object, in the invention described in claim 1, the reaction vessels (9 to 11) are arranged in multiple stages, and the reaction vessels (9 to 11) in each stage are provided with the reaction vessels (9) in the previous stage. The unreacted raw material gas (3) that has not been consumed in step (3) is allowed to flow into the reaction vessel (10) in the next stage so that it can be used for the growth of the SiC single crystal (6) in the next stage. It is a feature.

  In this way, the source gas (3) is supplied over multiple stages, and the SiC single crystal (6) can be grown on the surfaces of the plurality of seed crystals (5) arranged in each of the multiple stages. Thereby, it becomes possible to recrystallize raw material gas (3) more efficiently, and it becomes possible to raise the yield of raw material gas (3).

  In the invention according to claim 2, the growth surface of the SiC single crystal (6) is set to be lower in temperature than the boundary position of each stage of the reaction vessels (9 to 11) arranged in multiple stages, and each It is characterized in that the temperature at the stage boundary position is controlled to a temperature at which the sublimation rate is higher than the recrystallization rate of the source gas (3).

  In this way, the position that becomes the boundary of each stage is heated. Thereby, it is also possible to suppress the occurrence of clogging. For example, as described in claim 3, while controlling the temperature of the growth surface of the SiC single crystal (6) to 2000 to 2300 ° C., the boundary position of each stage of the reaction vessels (9 to 11) arranged in multiple stages Can be controlled at 2300-2700 ° C.

  The fourth to thirteenth aspects relate to a manufacturing apparatus suitable for realizing the method for manufacturing a SiC single crystal according to the first to third aspects.

  In the invention according to claim 4, the space formed by the bottomed cylindrical reaction vessels (9 to 11) arranged in multiple stages and constituting the space, and the reaction vessels (9 to 11) arranged in multiple stages. And a pedestal (12, 13) on which the seed crystal (5) is arranged, and among the reaction vessels (9 to 11) arranged in multiple stages, the reaction vessels (10, 11) is provided with gas flow holes (10b, 11b) for flowing the raw material gas (3) from the previous stage to the next stage at the boundary position of each stage, and the first-stage reaction vessel (9-11) The raw material gas (3) is structured to flow through the gas flow holes (10b, 11b) in order.

  Thus, the reaction vessels (9 to 11) are arranged in multiple stages, and among the reaction containers (9 to 11) arranged in multiple stages, the gas flow holes (10b, 11b), the source gas (3) is supplied in multiple stages, and the SiC single crystal (6) can be grown on the surfaces of the plurality of seed crystals (5) arranged in each of the multiple stages. Yes. Thereby, it becomes possible to recrystallize raw material gas (3) more efficiently, and it becomes possible to raise the yield of raw material gas (3).

  The invention according to claim 5 is characterized in that the heating device (16-18) is provided at a position corresponding to the boundary position of each stage of the reaction vessels (9-11) arranged in multiple stages.

  Thus, by providing the heating device (16 to 18) near the position of the boundary of each stage, that is, in the vicinity of the gas flow holes (10b, 11b), this place can be heated again. Thereby, it is also possible to suppress the occurrence of clogging.

  In this case, as described in the sixth aspect, it is preferable that the heating devices (16 to 18) be capable of heating each boundary position of each stage independently because more precise temperature control can be performed. Moreover, as described in claim 7, the heating devices (16 to 18) are arranged so as to correspond to at least one of the reaction vessels (9 to 11). The temperature distribution can be easily created.

  In invention of Claim 8, it is the same direction as the growth direction of the SiC single crystal (6) in what constitutes the space (9, 10) which grows the SiC single crystal (6) among reaction vessels (9-11). The length of is characterized in that it is at least three times the dimension of the tip position where the seed crystal (5) is placed on the pedestal (12, 13).

  Thus, even if the dimension of the seed crystal (5) is increased by setting the length in the same direction as the growth direction of the SiC single crystal (6) in the reaction vessel (9, 10), the thermal radiation is reduced. It can be prevented that a temperature gradient cannot be formed in the space due to the influence.

  The invention according to claim 9 is characterized in that the thickness of the pedestal (12, 13) is made larger than the dimension of the tip position where the seed crystal (5) is arranged in the pedestal (12, 13). Yes.

  As described above, by increasing the thickness of the pedestal (12, 13), even if the size of the seed crystal (5) is increased, a temperature difference is provided between the upper surface and the lower surface of the pedestal (12, 13). It becomes possible.

  Such pedestals (12, 13) are made of graphite, as described in claim 10, for example. Further, as described in claim 11, it is preferable to coat the side surface of the base (12, 13) with tantalum carbide. In this way, the attachment of SiC polycrystal to the pedestals (12, 13) is further reduced, and clogging can be suppressed.

  In the invention according to claim 12, the reaction vessels (9 to 11) arranged in multiple stages have a nested structure in which the reaction vessel of the next stage enters from the opening side of the reaction container of the previous stage, and the reaction containers (9 to 9). 11), a lifting mechanism (21, 22) for pulling up the second and subsequent stages relative to the first stage is provided.

  By adopting such a structure, the growth surface of the SiC single crystal (6) is maintained at a fixed position by pulling up the reaction vessel (10, 11) as the SiC single crystal (6) grows. Can do. Thereby, the growth rate and quality of the SiC single crystal (6) can be kept constant.

  In this case, as described in claim 13, if an X-ray apparatus (23, 24) for confirming the growth amount of the SiC single crystal (6) grown on the surface of the seed crystal (5) is provided, SiC is provided. Crystal growth can be performed while confirming the growth amount of the single crystal 6, and the growth surface of the SiC single crystal (6) can always be maintained at a fixed position, so that the above effect can be obtained.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

It is a figure showing the section composition of the crystal growth device concerning a 1st embodiment of the present invention. It is the figure which showed the source gas supply path | route and temperature distribution in a crystal growth apparatus. It is a figure which shows the result of having investigated the temperature distribution in a crystal growth apparatus by simulation. It is a figure which shows the cross-sectional structure of the crystal growth apparatus concerning 2nd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
FIG. 1 is a sectional view of a crystal growth apparatus according to this embodiment. FIG. 2 is a diagram showing a source gas supply path and temperature distribution in the crystal growth apparatus shown in FIG.

  The crystal growth apparatus 1 shown in FIG. 1 supplies crystal raw material gas 3 containing Si and C through an inlet 2 provided at the bottom, and discharges it through an outlet 4 provided at the top, thereby crystal growth. An SiC single crystal 6 is grown on a seed crystal 5 made of an SiC single crystal substrate disposed in the apparatus 1.

  The crystal growth apparatus 1 includes a vacuum vessel 7, a first heat insulating material 8, first, second and third reaction vessels 9, 10 and 11, first and second pedestals 12 and 13, a gas flow concentration mechanism 14, a first Two heat insulating materials 15 and first, second, and third heating devices 16, 17, and 18 are provided.

  The vacuum vessel 7 has a hollow cylindrical shape and can introduce argon gas and the like, and accommodates other components of the crystal growth apparatus 1 and evacuates the pressure of the accommodated internal space. Therefore, the pressure can be reduced. An inlet 2 for the source gas 3 is provided at the bottom of the vacuum vessel 7, and an outlet 4 for the source gas 3 is provided at the top (specifically, above the side wall).

  The first heat insulating material 8 has a cylindrical shape such as a cylinder, and the raw material gas introduction pipe 8a is constituted by the hollow portion. The first heat insulating material 8 is made of, for example, graphite or graphite whose surface is coated with TaC (tantalum carbide).

  The 1st-3rd reaction containers 9-11 comprise the space through which the source gas 3 flows, and are comprised by the hollow cylinder shape. In the present embodiment, the first to third reaction vessels 9 to 11 have a cylindrical shape with the same diameter, and are made of, for example, graphite or graphite whose surface is coated with TaC (tantalum carbide).

  A seed crystal 5 is arranged in a space formed by the first and second reaction vessels 9 and 10, and an SiC single crystal 6 is grown on the surface of the seed crystal 5 in the space. For example, in this embodiment, the 1st-3rd reaction containers 9-11 are comprised by the bottomed cylindrical shape.

  A through hole 9a corresponding to the raw material gas introduction pipe 8a is formed at the center position of the bottom surface of the first reaction vessel 9, and the through hole 9a and the raw material gas introduction pipe 8a are brought into contact with the first heat insulating material 8. Are connected.

  A through hole 10 a is also formed at the center of the bottom surface of the second reaction vessel 10. A first pedestal 12 is inserted into the through-hole 10 a, and the first pedestal 12 protrudes into a space formed by the first reaction vessel 9. In addition, on the bottom surface of the second reaction vessel 10, a plurality of gas flow holes 10b including through holes are also arranged around the through hole 10a, for example, at equal intervals. Since the bottom surface of the second reaction vessel 10 is brought into contact with the open end of the first reaction vessel 9, the discharge of the raw material gas 3 from these contact points is prevented. As shown in FIG. 2, the source gas 3 in the space formed by the first reaction vessel 9 is caused to flow into the space formed by the second reaction vessel 10 through the gas flow holes 10b.

  A through hole 11 a is also formed at the center of the bottom surface of the third reaction vessel 11. A second pedestal 13 is inserted into the through-hole 11a, and the second pedestal 13 protrudes into the space formed by the second reaction vessel 10. In addition, on the bottom surface of the third reaction vessel 11, a plurality of gas flow holes 11b including through holes are also arranged around the through holes 11a, for example, at equal intervals. Since the bottom surface of the third reaction vessel 11 is brought into contact with the open end of the second reaction vessel 10, the discharge of the raw material gas 3 from these contact points is prevented. As shown in FIG. 2, the source gas 3 in the space formed by the second reaction vessel 10 is caused to flow into the space formed by the third reaction vessel 11 through the gas flow holes 11b.

  Of the first to third reaction vessels 9 to 11, the lengths of the first and second reaction vessels 9 and 10 constituting the space for growing the SiC single crystal 6 (length in the vertical direction on the paper surface). In other words, the length of the SiC single crystal 6 in the growth direction is set to be three times or more the size (diameter) of the seed crystal 5 arranged on the first and second pedestals 12 and 13. That is, as the size of the seed crystal 5 increases, it becomes difficult to form a temperature gradient in the space due to the influence of heat radiation.

  The first and second pedestals 12 and 13 are used for disposing the seed crystal 5 at the tip thereof. The first and second pedestals 12 and 13 are made of graphite, and the side surfaces thereof are coated with tantalum carbide. By coating in this way, adhesion of SiC polycrystal to the first and second pedestals 12 and 13 can be further reduced, and clogging can be suppressed.

  Moreover, the front-end | tip part for arrange | positioning the seed crystal 5 in the 1st, 2nd bases 12 and 13 is made into the same dimension as the seed crystal 5, for example, is made into circular shape, for example. The thickness of the first and second pedestals 12 and 13 (the length in the vertical direction on the paper surface, that is, the length in the growth direction of the SiC single crystal 6) is the diameter of the seed crystal 5 arranged on the first and second pedestals 12 and 13 Has been adjusted based on. That is, as the diameter of the seed crystal 5 increases, a temperature difference between the upper surface and the lower surface of the first and second pedestals 12 and 13 becomes harder, so the thickness of the first and second pedestals 12 and 13 is increased. For example, the thickness is larger than the diameter of the seed crystal 5 (for example, 50 mm or more).

  The first and second pedestals 12 and 13 are configured in a substantially cylindrical shape in the present embodiment, but may be configured in other shapes such as a truncated cone shape and a parabolic cross section. In the present embodiment, since the first and second pedestals 12 and 13 have a cylindrical shape, the first and second pedestals 12 and 13 are arranged at the end opposite to the tip portion where the seed crystal 5 is disposed. The diameter is slightly enlarged, and when the first and second pedestals 12 and 13 are inserted into the through holes 10a and 11a of the second and third reaction vessels 10 and 11, positioning and prevention of removal are prevented at the enlarged diameter portion. Is done.

  The gas flow concentrating mechanism 14 has the source gas 3 flowing from the space formed by the first reaction vessel 9 through the gas flow hole 10b to the space formed by the second reaction vessel 10 at the center position, that is, the seed crystal 5 is disposed. It is for concentrating on a certain position. In the present embodiment, the gas flow concentrating mechanism 14 is formed in a hollow truncated cone shape, the bottom surface thereof is disposed toward the bottom surface side of the second reaction vessel 10, and the top surface thereof is directed toward the third reaction vessel 11 side. Are arranged. The gas flow concentration mechanism 14 is also composed of, for example, graphite, graphite whose surface is coated with TaC (tantalum carbide), TaC (tantalum carbide), or the like.

  The 2nd heat insulating material 15 is arrange | positioned along the side wall surface of the vacuum vessel 7, and has comprised the hollow cylinder shape. The second heat insulating material 15 substantially surrounds the first heat insulating material 8, the first to third reaction vessels 9 to 11, and the like. The second heat insulating material 15 is made of, for example, graphite or graphite whose surface is coated with TaC (tantalum carbide).

  The 1st-3rd heating apparatuses 16-18 are comprised, for example with the coil for induction heating, a heater, etc., and are arrange | positioned so that the circumference | surroundings of the vacuum vessel 7 may be enclosed. These 1st-3rd heating apparatuses 16-18 are comprised so that temperature control can be carried out independently, respectively. For this reason, finer temperature control can be performed. The first heating device 16 is disposed at a position corresponding to the bottom surface of the first reaction vessel 9 and the space formed by the first reaction vessel 9. The second heating device 17 is disposed at a position corresponding to the bottom surface of the second reaction vessel 10 and the space formed by the second reaction vessel 9. The third heating device 18 is disposed at a position corresponding to the bottom surface of the third reaction vessel 11. Since it is set as such arrangement | positioning, any one of the 1st-3rd heating apparatuses 16-18 will be arrange | positioned corresponding to each reaction container 9-11 at least, and desired temperature distribution is easy. Can be produced.

  A method for manufacturing SiC single crystal 6 using the thus configured crystal growth apparatus will be described.

  First, the first to third heating devices 16 to 18 are controlled to give a temperature distribution as shown in FIG. That is, for a portion where the source gas 3 is not recrystallized and clogging is not desired, for example, at a temperature at which the sublimation rate is higher than the recrystallization rate of the source gas 3, at the growth surface of the SiC single crystal 6. The temperature at which the growth rate of the SiC single crystal 6 is higher than the sublimation rate.

  Specifically, the source gas 3 is caused to flow from the first reaction vessel 9 to the second reaction vessel 10 near the inlet where the source gas 3 flows into the first reaction vessel 9 through the source gas introduction pipe 8a and the through hole 9a. Therefore, it is necessary to suppress the occurrence of clogging in the vicinity of the gas flow hole 10b and the vicinity of the gas flow hole 10b for flowing the raw material gas 3 from the first reaction vessel 9 to the second reaction vessel 10. For this reason, about these places, it is set as the temperature which the direction of a sublimation rate becomes higher than the recrystallization rate of the source gas 3, for example, 2300-2700 degreeC. On the other hand, before the growth of the SiC single crystal 6, it is necessary to recrystallize the SiC on the surface of the seed crystal 5 and on the growth surface with the growth of the SiC single crystal 6. For this reason, about these places, it is set as temperature lower than the place where it was necessary to suppress generation | occurrence | production of clogging, and it is set as the temperature where the growth rate of the SiC single crystal 6 becomes higher than a sublimation rate, for example, 2000-2300 degreeC. In addition, although it is necessary to change temperature distribution with the growth of the SiC single crystal 6, it is possible by controlling the 1st-3rd heating apparatuses 16-18 suitably.

  Then, the raw material gas 3 is introduced through the raw material gas introduction pipe 8a. Thereby, as indicated by the arrow in FIG. 2, first, the source gas 3 is supplied to the surface of the seed crystal 5 in the space constituted by the first reaction vessel 9, and the unreacted material gas 3 is further unreacted. The raw material gas 3 is supplied to the surface of the seed crystal 5 in the space formed in the second reaction vessel 10 through the gas flow hole 10b. That is, the raw material gas 3 is supplied in order from the first stage through the gas flow holes 10b and 11b, and the unreacted raw material gas 3 that has not been consumed in the previous reaction vessel flows into the next reaction vessel. It can be used for the growth of the next stage SiC single crystal 6. Thereby, source gas 3 can be consumed over multiple stages, and SiC single crystal 6 can be grown on the surfaces of a plurality of seed crystals 5 arranged in each of the multiple stages.

  As a reference, FIG. 3 shows the result of examining the temperature distribution by simulation. As shown in this figure, by controlling the first to third heating devices 16 to 18, the temperature of each part in the crystal growth device 1 can be controlled, and the temperature distribution as described above can be obtained. . And the part of the seed crystal 5 became the lowest temperature in the space comprised with the 1st reaction container 9 used as the 1st step. In the space constituted by the second reaction vessel 10 in the second stage, the temperature slightly below the seed crystal 5 is the lowest, but the source gas 3 has already been sufficiently decomposed, so that there is a problem with crystal growth. There wasn't. When each growth rate was examined, a result of 200 μm / h at the first stage and 150 μm / h at the second stage could be obtained.

  As described above, in the present embodiment, the source gas 3 is supplied in multiple stages, and the SiC single crystal 6 can be grown on the surfaces of the plurality of seed crystals 5 arranged in each of the multiple stages. Thereby, the source gas 3 can be recrystallized more efficiently, and the yield of the source gas 3 can be increased.

  In addition, the position that becomes the boundary of each stage, that is, the vicinity of the gas flow hole 10b is heated again. Thereby, it is also possible to suppress the occurrence of clogging.

  Furthermore, when the source gas 3 flows from the space where the first stage crystal growth is performed to the space where the second stage crystal growth is performed, the source gas 3 is dispersed at a position away from the center. The flow concentration mechanism 14 concentrates again at the center position. For this reason, in the case of crystal growth over multiple stages, the source gas 3 can be accurately supplied to the surface of the seed crystal 5 even in the subsequent stage, and the yield of the source gas 3 can be further increased. . In addition, the growth rate of the SiC single crystal 6 can be improved.

(Second Embodiment)
A second embodiment of the present invention will be described. The crystal growth apparatus 1 of the present embodiment is obtained by changing the configuration of the first to third reaction vessels 9 to 11 with respect to the first embodiment, and is otherwise the same as the first embodiment. Only parts different from the first embodiment will be described.

  FIG. 4 is a cross-sectional view of the crystal growth apparatus 1 according to the present embodiment. As shown in this figure, in this embodiment, the first to third reaction vessels 9 to 11 are configured with different dimensions, and the bottom side of the second reaction vessel 10 enters the opening of the first reaction vessel 9, 2 It is set as the nesting structure where the bottom face side of the 3rd reaction container 11 enters in the opening part of 10 reaction container. The inner diameter of the first reaction vessel 9 and the outer diameter of the second reaction vessel 10 are made the same size, and the inner diameter of the second reaction vessel 10 and the outer diameter of the third reaction vessel 11 are made the same size. As a result, the space between the first reaction vessel 9 and the second reaction vessel 10 is closed without a gap, and the space between the second reaction vessel 10 and the third reaction vessel 11 is closed without a gap.

  Furthermore, pulling mechanisms 21 and 22 made of carbon wire or the like are provided at the ends of the second and third reaction vessels 10 and 11 on the opening side, respectively. 11 can be pulled up independently.

  Further, an X-ray apparatus 23 that can confirm the portion corresponding to the growth surface of the SiC single crystal 6 (that is, the tip position of the first and second pedestals 12 and 13) so that the growth amount of the SiC single crystal 6 can be known. , 24 are arranged around the vacuum vessel 7.

  With this structure, crystal growth can be performed while confirming the growth amount of the SiC single crystal 6, and the second and third reaction vessels 10, 11 are pulled along with the growth of the SiC single crystal 6. By raising, the growth surface of the SiC single crystal 6 can always be maintained at a fixed position. Thereby, the growth rate and quality of SiC single crystal 6 can be kept constant.

(Other embodiments)
The specific structure of the crystal growth apparatus 1 shown in the above embodiments is merely an example, and the shape, material, and the like can be changed as appropriate. For example, although a plurality of gas flow holes 10b and 11b are provided on the bottom surfaces of the reaction vessels 10 and 11, an infinite number of gas flow holes 10b and 11b may be provided by making the bottom surfaces mesh. That is, any structure may be used as long as the pedestals 12 and 13 can be arranged at the center position of the bottom surfaces of the reaction vessels 10 and 11.

  In addition, the second and third reaction vessels 10 and 11 have been described with respect to the case where the pulling mechanisms 21 and 22 are provided in the second embodiment, but the second and third reaction vessels 10 and 11 in the second and subsequent stages are provided. Other structures, for example, a structure for pulling down the first reaction vessel 9 side may be provided as long as the structure is relatively pulled up.

  In the above-described embodiment, the crystal growth apparatus 1 capable of growing the SiC single crystal 6 in two stages has been described as an example, but a multistage crystal growth apparatus having three or more stages may be used as a matter of course.

DESCRIPTION OF SYMBOLS 1 Crystal growth apparatus 2 Inlet 3 Source gas 4 Outlet 5 Seed crystal 6 SiC single crystal 7 Vacuum vessel 8, 15 1st, 2nd heat insulating material 8a Source gas introduction pipe 9-11 1st-3rd reaction vessel 9a- 11a Through hole 10b, 11b Gas flow hole 12, 13 First and second pedestal 14 Gas flow concentrating mechanism 16-18 First to third heating devices 21, 22 Lifting mechanism 23, 24 X-ray device

Claims (13)

A seed crystal (5) composed of a silicon carbide single crystal substrate is placed on a pedestal (12, 13) placed in a reaction vessel (9-11), and a silicon carbide source gas (3) is supplied. In the method for producing a silicon carbide single crystal in which a silicon carbide single crystal (6) is grown on the surface of the seed crystal (5),
The reaction vessels (9 to 11) are arranged in multiple stages, and the unreacted raw material gas remaining in the reaction vessels (9 to 11) in each stage is not consumed in the previous reaction vessel (9). (3) is made to flow into the reaction vessel (10) in the next stage and used for the growth of the silicon carbide single crystal (6) in the next stage. Method.   The growth surface of the silicon carbide single crystal (6) is lower in temperature than the boundary position of each stage of the reaction vessels (9 to 11) arranged in multiple stages, and the temperature at the boundary position of each stage. The method for producing a silicon carbide single crystal according to claim 1, wherein the temperature is controlled to a temperature at which a sublimation rate is higher than a recrystallization rate of the source gas (3).   The temperature of the growth surface of the silicon carbide single crystal (6) is controlled to 2000 to 2300 ° C, and the temperature of the boundary position of each stage of the reaction vessels (9 to 11) arranged in multiple stages is set to 2300 to 2700 ° C. The method for producing a silicon carbide single crystal according to claim 2, wherein the method is controlled. A seed crystal (5) composed of a silicon carbide single crystal substrate is placed on a pedestal (12, 13) placed in a reaction vessel (9-11), and a silicon carbide source gas (3) is supplied. In the silicon carbide single crystal manufacturing apparatus for growing the silicon carbide single crystal (6) on the surface of the seed crystal (5),
A reaction vessel (9 to 11) arranged in a multistage and having a bottomed cylindrical shape constituting a space;
A pedestal (12, 13) arranged in the space constituted by the reaction vessels (9 to 11) arranged in multiple stages and arranged with the seed crystal (5),
Among the reaction vessels (9 to 11) arranged in multiple stages, the source gas (3) flows from the previous stage to the next stage in the reaction containers (10, 11) in the second and subsequent stages. Gas flow holes (10b, 11b), and a structure in which the source gas (3) flows through the gas flow holes (10b, 11b) in order from the first-stage reaction vessel (9-11). An apparatus for producing a silicon carbide single crystal, wherein   The silicon carbide single-piece | unit of Claim 4 with which the heating apparatus (16-18) is provided in the position corresponding to the boundary position of each step | level of the said reaction container (9-11) arrange | positioned in multiple steps | paragraphs. Crystal manufacturing equipment.   The said heating apparatus (16-18) is comprised so that each boundary position of each step | paragraph can be heated independently, The manufacturing apparatus of the silicon carbide single crystal of Claim 5 characterized by the above-mentioned.   The said heating apparatus (16-18) is arrange | positioned corresponding to at least one of the said reaction containers (9-11), The silicon carbide single crystal of Claim 6 characterized by the above-mentioned. Manufacturing equipment.   The length in the same direction as the growth direction of the silicon carbide single crystal (6) in the reaction vessel (9-11) constituting the space for growing the silicon carbide single crystal (6) is the pedestal (12 13) The production of a silicon carbide single crystal according to any one of claims 4 to 7, characterized in that it is at least three times the size of the tip position where the seed crystal (5) is arranged in 13). apparatus.   The thickness of the pedestal (12, 13) is larger than the dimension of the tip position where the seed crystal (5) is arranged on the pedestal (12, 13). The manufacturing apparatus of the silicon carbide single crystal as described in any one.   The said base (12, 13) is comprised with the graphite, The manufacturing apparatus of the silicon carbide single crystal as described in any one of Claim 4 thru | or 9 characterized by the above-mentioned.   The side surface of the said base (12, 13) is coated with the tantalum carbide, The manufacturing apparatus of the silicon carbide single crystal of Claim 10 characterized by the above-mentioned. The reaction containers (9 to 11) arranged in multiple stages have a nested structure in which the reaction container of the next stage enters from the opening side of the reaction container of the previous stage,
The pulling mechanism (21, 22) for pulling up the second and subsequent stages of the reaction vessels (9 to 11) relative to the first stage is provided. The manufacturing apparatus of the silicon carbide single crystal as described in any one.   The carbonization according to claim 12, further comprising an X-ray device (23, 24) for confirming the growth amount of the silicon carbide single crystal (6) grown on the surface of the seed crystal (5). Silicon single crystal manufacturing equipment.