JP2013008952A - 低フラックス及び低ノイズの検出回路 - Google Patents
低フラックス及び低ノイズの検出回路 Download PDFInfo
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- JP2013008952A JP2013008952A JP2012114265A JP2012114265A JP2013008952A JP 2013008952 A JP2013008952 A JP 2013008952A JP 2012114265 A JP2012114265 A JP 2012114265A JP 2012114265 A JP2012114265 A JP 2012114265A JP 2013008952 A JP2013008952 A JP 2013008952A
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- 238000001514 detection method Methods 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 30
- 230000008878 coupling Effects 0.000 claims description 60
- 238000010168 coupling process Methods 0.000 claims description 60
- 238000005859 coupling reaction Methods 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 description 27
- 238000000034 method Methods 0.000 description 14
- 230000008859 change Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】ソースフォロワ検出器型の検出回路は、結合ノードNに接続されたフォトダイオード1を備える。バイアス回路3は、逆バイアスである第1の状態とフローティングである第2の状態との間にフォトダイオード1をバイアスすることを可能にする。読み出し回路4は、結合ノードNに接続され、フォトダイオード1により測定された現状を示す信号を生成する。金属シールド5は結合ノードNの周りに配置される。金属シールド5は、読み出し回路4の出力に接続され、結合ノードNの電位と同じ方向に変動する電位を持つように構成される。
【選択図】図4
Description
− 結合ノードに接続されたフォトダイオードと、
− 逆バイアス状態である第1の状態とフローティング状態である第2の状態との間にフォトダイオードをバイアスするバイアス回路と、
− 結合ノードに接続された読み出し回路であって、フォトダイオードにより測定された現状を示す信号を生成するための回路と、
− 結合ノードの周りに配置され、且つ、読み出し回路の出力に接続された金属シールドであって、その出力は、結合ノードの電位と同じ方向に変動する電位を持つように構成されている、金属シールドと。
Claims (10)
- ソースフォロワ検出器型の検出回路であって、
− 結合ノード(N)に接続されたフォトダイオード(1)と、
− 逆バイアス状態である第1の状態とフローティング状態である第2の状態との間に前記フォトダイオード(1)をバイアスするバイアス回路(3)と、
− 前記結合ノード(N)に接続された読み出し回路(4)であって、前記フォトダイオード(1)により測定された現状を示す信号を生成する読み出し回路と、
を備え:
− 前記結合ノード(N)の周りに配置され、且つ、前記読み出し回路(4)の出力に接続された金属シールド(5)であって、前記結合ノードの電位と同じ方向に変動する電位を持つように構成され、且つ、電気シールドを形成する金属シールドを備える、
ことを特徴とする回路。 - 前記読み出し回路(4)はフォロワトランジスタ(7)を備え、前記フォロワトランジスタは、前記結合ノード(N)の電位と同じ方向に変動する電位を持つように構成された電気ノードに接続された電極を有する、ことを特徴とする請求項1に記載の回路。
- 前記フォロワトランジスタ(7)は、前記結合ノードに接続された制御電極と、前記金属シールド(5)に接続された他の電極とを有する、ことを特徴とする請求項2に記載の回路。
- 前記金属シールド(5)は、前記結合ノード(N)の電位に対して一定の電位差を持つように構成された前記読み出し回路(4)の出力に接続される、ことを特徴とする請求項1から3のいずれか1つに記載の回路。
- 前記金属シールド(5)は、前記フォトダイオード(1)を前記バイアス回路(3)に接続する前記電力ラインを取り囲む、ことを特徴とする請求項1から4のいずれか1つに記載の回路。
- 前記金属シールド(5)は、前記結合ノード(N)を前記読み出し回路(4)に接続する前記電力ラインを取り囲む、ことを特徴とする請求項1から5のいずれか1つに記載の回路。
- 前記フォトダイオード(1)は第1の基板(9)の上に形成され、前記バイアス回路(3)と前記読み出し回路(4)とは第2の基板の上に形成され、前記フォトダイオードは、金属バンプ(11)によって前記バイアス回路(3)と前記読み出し回路(4)とに接続され、前記金属バンプ(11)は、前記読み出し回路(4)の前記出力に接続された金属リング(12)により取り囲まれている、ことを特徴とする請求項1から6のいずれか1つに記載の回路。
- 前記金属シールド(5)は、前記金属バンプ(11)と前記読み出し回路(4)を備える半導体基板との間の電気絶縁材料中に配置される、ことを特徴とする請求項1から7のいずれか1つに記載の回路。
- 請求項1から8のいずれか1つに記載の回路を複数含む検出マトリックスであって、各読み出し回路(4)は特定の選択入力を備え、出力ライン(OUT)は前記読み出し回路(4)の前記出力端子に接続されている、検出マトリックス。
- 前記出力ラインは前記金属シールド(5)に接続されている、ことを特徴とする請求項9に記載の検出マトリックス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1101571A FR2975529B1 (fr) | 2011-05-20 | 2011-05-20 | Circuit de detection a faible flux et faible bruit |
FR1101571 | 2011-05-20 |
Publications (2)
Publication Number | Publication Date |
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JP2013008952A true JP2013008952A (ja) | 2013-01-10 |
JP6165418B2 JP6165418B2 (ja) | 2017-07-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012114265A Active JP6165418B2 (ja) | 2011-05-20 | 2012-05-18 | 低フラックス及び低ノイズの検出回路 |
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Country | Link |
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US (1) | US8872097B2 (ja) |
EP (1) | EP2525406B1 (ja) |
JP (1) | JP6165418B2 (ja) |
FR (1) | FR2975529B1 (ja) |
IL (1) | IL219855A0 (ja) |
Cited By (2)
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WO2020262629A1 (ja) * | 2019-06-26 | 2020-12-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
WO2022044821A1 (ja) * | 2020-08-26 | 2022-03-03 | 株式会社村田製作所 | 電子部品、モジュールおよび電子部品の製造方法 |
Families Citing this family (5)
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JP6112312B2 (ja) * | 2012-06-26 | 2017-04-12 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
US9356061B2 (en) | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
US10062722B2 (en) * | 2016-10-04 | 2018-08-28 | Omnivision Technologies, Inc. | Stacked image sensor with shield bumps between interconnects |
DE102020111562A1 (de) | 2020-04-28 | 2021-10-28 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
DE102021128022B3 (de) | 2021-10-27 | 2023-02-02 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
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JP2010161390A (ja) * | 2002-01-11 | 2010-07-22 | Crosstek Capital Llc | イメージセンサ |
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JPH0758308A (ja) * | 1993-06-30 | 1995-03-03 | Sanyo Electric Co Ltd | 固体撮像素子 |
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-
2011
- 2011-05-20 FR FR1101571A patent/FR2975529B1/fr active Active
-
2012
- 2012-05-16 EP EP12354029.6A patent/EP2525406B1/fr active Active
- 2012-05-17 IL IL219855A patent/IL219855A0/en active IP Right Grant
- 2012-05-18 JP JP2012114265A patent/JP6165418B2/ja active Active
- 2012-05-21 US US13/476,444 patent/US8872097B2/en active Active
Patent Citations (3)
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JP2010161390A (ja) * | 2002-01-11 | 2010-07-22 | Crosstek Capital Llc | イメージセンサ |
JP2008543085A (ja) * | 2005-06-02 | 2008-11-27 | イーストマン コダック カンパニー | Cmos能動画素センサの増幅器を共有した画素 |
WO2010030329A1 (en) * | 2008-09-09 | 2010-03-18 | Eastman Kodak Company | High gain read circuit for 3d integrated pixel |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020262629A1 (ja) * | 2019-06-26 | 2020-12-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
US11901391B2 (en) | 2019-06-26 | 2024-02-13 | Sony Semiconductor Solutions Corporation | Imaging device |
WO2022044821A1 (ja) * | 2020-08-26 | 2022-03-03 | 株式会社村田製作所 | 電子部品、モジュールおよび電子部品の製造方法 |
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Publication number | Publication date |
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IL219855A0 (en) | 2012-07-31 |
US20120292490A1 (en) | 2012-11-22 |
US8872097B2 (en) | 2014-10-28 |
FR2975529B1 (fr) | 2013-09-27 |
FR2975529A1 (fr) | 2012-11-23 |
EP2525406A1 (fr) | 2012-11-21 |
JP6165418B2 (ja) | 2017-07-19 |
EP2525406B1 (fr) | 2018-04-11 |
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