JP2013008704A - Display device, method for manufacturing display device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve thinness as well as low refractive index of a protective film to protect a display region in an organic electroluminescent element, and to improve efficiency and lifetime.SOLUTION: A display device comprises: a display region 20 of resonator structure to resonate light generated; a protective film 17 formed in a state covering the display region 20; a resin layer 18 to be formed on the protective film 17; and a sealing layer 19 pasted up by the resin layer 18. The protective film 17 is constructed of a single layer of silicon nitride, and a refractive index at wavelength 450 nm is 1.65 or more and 1.75 or less.

Description

  The present invention relates to a display device having a display region of a resonator structure that resonates generated light, and more particularly to a display device and an electronic apparatus using a top emission type organic electroluminescence element that is excellent in light extraction efficiency.

  An organic electroluminescent device comprising an organic layer in which an organic hole transport layer or an organic light emitting layer is laminated between an anode and a cathode is attracting attention as a light emitting device capable of emitting high luminance by low voltage direct current drive. . On the other hand, the organic electroluminescence device has a problem that its stability over time is low, such as light emission luminance being lowered due to moisture absorption and light emission becoming unstable. Therefore, in a display device using an organic electroluminescent element, the organic electroluminescent element is covered with a protective film to prevent moisture from reaching the organic electroluminescent element.

  From this point of view, for example, a silicon nitride oxide film or a silicon nitride film is used as the protective film that covers the organic electroluminescent element. A silicon nitride oxide film is very advantageous for device characteristics because of its low refractive index and high transmittance, but it is inferior in moisture proofing, so that a considerable film thickness is required. Such a film thickness increases the internal stress of the film, causes peeling from the cathode electrode, microcracks, and the like, resulting in a contradiction in that the characteristics and moisture resistance of the organic electroluminescent element are deteriorated.

On the other hand, it has been proposed to apply a plasma CVD (Chemical Vapor Deposition) method using only silane gas and nitrogen without using ammonia gas as a source gas for silicon nitride. By using the silicon nitride film thus formed as a protective film, the protective film is not cracked or peeled off, and the operation of the organic electroluminescent element is stabilized (for example, see Patent Document 1).

  In a film formation method using silane gas, nitrogen gas, or hydrogen gas as a source gas, the film density is controlled by changing the concentration of nitrogen gas, and the high-density silicon nitride film is sandwiched between low-density silicon nitride films. A configuration has also been proposed in which the residual stress in the protective film is reduced by using a three-layer structure to prevent film peeling (see, for example, Patent Document 2). However, since these methods have a low transmittance of the protective film, the transmittance of a blue wavelength (around 450 nm) is significantly reduced, which causes a decrease in color reproducibility. For this reason, a method of improving the transmittance and forming a film with good coverage by introducing ammonia gas has been proposed (see, for example, Patent Document 3).

JP 2000-223264 A JP 2004-63304 A JP 2007-184251 A

  However, although the technique disclosed in Patent Document 3 is excellent in the moisture resistance of the protective film, the refractive index becomes high (for example, 1.85 to 1.91), so that the interface with the resin layer thereabove is used. If the film thickness is reduced, the chromaticity and brightness of the extracted light will be shifted due to the film thickness distribution of the protective film, which may increase the process margin. The problem that it becomes impossible. Therefore, it is necessary to eliminate the chromaticity shift due to the film thickness distribution by increasing the film thickness to cause multiple interference. In addition, increase in the cycle time and cost becomes a problem by using a thick film. In addition, the transmittance of the protective film is lower than that of a thin film, and in particular, the transmittance of the blue wavelength (near 450 nm) is remarkably reduced, which causes a decrease in color reproducibility.

  The present invention relates to a display region having a resonator structure that resonates generated light, a protective film formed so as to cover the display region, a resin layer formed on the protective film, and a seal attached by the resin layer. The protective device is composed of a single layer of silicon nitride, and has a refractive index of 1.65 or more and 1.75 or less at a wavelength of 450 nm. The present invention is also an electronic device in which such a display device is provided in a main body housing.

  In particular, the protective film applied in the present invention is formed by chemical vapor deposition using silane gas, ammonia gas, and nitrogen gas, and has a structure in which a silicon nitride film having a low refractive index is laminated. The thickness of the protective film is 100 nm or more and 1 μm or less, and the stress of the protective film is almost zero.

  As a result, the refractive index of the protective film approaches the refractive index of the resin layer, and even if the protective film is made thin, the wavelength of the interference wave becomes long and the color deviation of the extracted light due to the film thickness distribution is eliminated.

  For example, by adjusting the parameters of plasma CVD, the refractive index of the silicon nitride film, which is a protective film, is made lower than usual (refractive index of 1.65 to 1.75 at a wavelength of 450 nm), so that even a thin film interferes. By increasing the wavelength of the wave, the chromaticity shift of the extracted light in the plane due to the film thickness distribution is eliminated, and a process margin can be earned. In addition, the reduction in film thickness leads to improved transmittance, shorter tact, and cost reduction. Further, forming a film with good coverage while the refractive index is lowered leads to improvement in sealing reliability. In addition, since the thickness can be reduced, the internal stress of the film becomes almost zero, and the device characteristics can be improved.

Here, the reflectivity R of the interface between the resin layer and the protective film (silicon nitride film) is as follows: when the refractive index of the silicon nitride film is n1 and the refractive index of the resin layer is n2.
R = (n1-n2) ² / (n1 + n2) ²
Therefore, by reducing n1, the interface reflectance can be reduced and the amplitude of the interference waveform can be reduced.

  The present invention has the following effects. That is, by reducing the thickness of the protective film and reducing the refractive index, it is possible to weaken the interference of light with the resin layer and reduce the in-plane chromaticity and luminance distribution. As a result, it is possible to improve the light transmittance and suppress the efficiency variation due to the in-plane variation. In addition, it is possible to improve the life due to the efficiency improvement. Furthermore, the process tact can be shortened by reducing the thickness of the protective film.

It is a schematic cross section explaining the structure of the display device according to the present embodiment. It is a figure which shows the value of the refractive index with respect to the wavelength about three types of protective films. It is a figure which shows the characteristic of three types of protective films. It is a figure which shows the chromaticity change by the film thickness distribution of each RGB color. It is a figure which shows the comparison result in the efficiency and dispersion | variation of each color. It is a figure which shows the change of the brightness | luminance with respect to the working time in each condition. It is a figure which shows the half life in each condition. It is a schematic diagram which shows the example of a flat type module shape. It is a perspective view which shows the television with which this embodiment is applied. It is a perspective view which shows the digital camera to which this embodiment is applied. It is a perspective view which shows the notebook type personal computer to which this embodiment is applied. It is a perspective view which shows the video camera to which this embodiment is applied. It is a figure which shows the portable terminal device to which this embodiment is applied, for example, a mobile telephone. It is a block diagram showing the structure of a display imaging device. It is a block diagram showing the structural example of an I / O display panel. It is a circuit diagram for demonstrating the connection relation of each pixel and the sensor reading H driver.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Structure of display device>
FIG. 1 is a schematic cross-sectional view illustrating the structure of the display device according to this embodiment. In the present embodiment, a display device including a top emission type organic EL display is taken as an example.

  That is, the display device includes a drive substrate in which a plurality of TFTs (Thin Film Transistors) are arranged on a substrate made of an insulating material made of glass (glass substrate 10), for example, and a display region 20 formed on the drive substrate. A protective film 17 formed so as to cover the display region 20, a resin layer 18 formed on the protective film 17, and a sealing layer 19 made of a glass substrate or the like attached by the resin layer 18. Yes.

  In a display device that displays a color image, as a display area 20 formed on the driving substrate, a display area that emits red light, a display area that emits green light, and a display area that emits blue light. Are arranged in a matrix in a predetermined order.

  In the present embodiment, the display region 20 includes a resonator structure that resonates generated light. The display region 20 includes an organic layer including a light emitting layer 23 between a first electrode (for example, the anode 15) that is a lower electrode and a second electrode (for example, the cathode 16) that is an upper electrode. The light generated at 23 is resonated between the first electrode and the second electrode, and is extracted from the second electrode side.

  The organic layer included in the display region 20 can have various configurations. In this embodiment, the organic layer includes a hole injection layer 21, a hole transport layer 22, a light emitting layer 23, and an electron transport layer 24 from the anode 15 side. It becomes the composition. The hole injection layer 21 serves to inject holes from the anode 15 into the organic layer 23. The hole transport layer 22 plays a role of efficiently sending holes injected from the hole injection layer 21 to the light emitting layer 23. The light emitting layer 23 is a portion that generates light by current injection. The electron transport layer 24 serves to inject electrons from the cathode 16 to the light emitting layer 23.

  The protective film 17 in the display area 20 is made of silicon nitride and is deposited so as to cover the display area 20. In the present embodiment, the protective film 17 is formed of a single layer of silicon nitride, and is formed so that the refractive index at a wavelength of 450 nm is 1.65 or more and 1.75 or less. Thereby, the refractive index of the protective film 17 approaches the refractive index (1.5 to 1.6) of the resin layer 18 formed on the protective film 17, and the wavelength of the interference wave is reduced even if the protective film 17 is thin. It becomes long and it becomes possible to eliminate the color shift of the extracted light in the plane due to the film thickness distribution. In particular, in this embodiment, the refractive index difference between the protective film 17 and the resin layer 18 at a wavelength of 450 nm is set to 0.3 or less (preferably 0.2). Thereby, the effect of color misregistration suppression can be exhibited more.

Here, the reflectivity R at the interface between the protective film 17 and the resin layer 18 on the protective film 17 is n1 as the refractive index of the silicon nitride film as the protective film 17 and n2 as the refractive index of the resin layer.
R = (n1-n2) ² / (n1 + n2) ²
It becomes. Therefore, by reducing n1, the interface reflectance can be reduced and the amplitude of the interference waveform can be reduced.

  The refractive index of the protective film 17 can be adjusted by adjusting the parameters of plasma CVD for forming the protective film 17. Further, the thickness of the protective film 17 is 100 nm or more and 1 μm or less, and the internal stress of the film can be made almost zero by reducing the thickness. Thereby, the influence on the display area 20 can be suppressed and the light emission characteristics can be improved.

<Manufacturing process of display device>
Next, the manufacturing method of the display device according to the present embodiment will be described in the order of steps. First, a TFT array in which a plurality of TFTs are arrayed is formed on a substrate (glass substrate 10) made of an insulating material such as glass.

  Next, a first insulating film 11 made of positive photosensitive polybenzoxazole is applied and formed on the glass substrate 10 on which the TFT array is formed, for example, by spin coating. The first insulating film 11 functions as a flattening film that flattens unevenness generated on the surface side of the glass substrate 10. In this embodiment, polybenzoxazole is used, but other insulating materials such as positive photosensitive polyimide may be used.

Thereafter, the first insulating film 11 is exposed and developed to form a contact hole for connecting to the TFT in the first insulating film 11. Subsequently, the glass substrate 10 in this state is baked in an inert gas atmosphere such as N ₂ to cure the polybenzoxazole and remove moisture and the like contained in the first insulating film 11. .

  Next, a conductive material layer in which an indium tin oxide (ITO) film, an Ag alloy film, and an ITO film are sequentially stacked from the glass substrate side is formed on the first insulating film 11 with the contact holes embedded. The film thickness of the conductive material layer is, for example, from the glass substrate 10 side, ITO film / Ag alloy film / ITO film = about 30 nm / about 100 nm / about 10 nm. Here, the Ag alloy film becomes a reflective layer of the lower electrode (anode 15) formed by patterning this conductive material layer in a later step.

  Subsequently, the conductive material layer is patterned by etching using a resist pattern formed by a normal lithography technique as a mask. Thereby, on the first insulating film 11 in the pixel region, the lower electrode (anode 15) corresponding to each pixel is connected to the TFT through the contact hole, and the peripheral region outside the pixel region is arranged. A conductive film is formed on the first insulating film 11. The conductive film is formed in a frame shape surrounding the pixel region with a width of about 3 mm, and is connected to a drive circuit.

  Here, this conductive film functions as an auxiliary wiring and is connected to an upper electrode formed in a later process to reduce wiring resistance, thereby improving luminance and obtaining a good in-plane luminance distribution. It is provided. For this reason, it is preferable to form with the material excellent in electroconductivity, and the one where the width | variety is wider is preferable.

  Next, a second insulating film 12 made of positive photosensitive polybenzoxazole is applied and formed again on the first insulating film 11 provided with the lower electrode (anode 15) and the conductive film, for example, by spin coating.

  Then, by exposing, developing and curing, each pixel, that is, a pixel opening for forming an organic EL element is formed in the pixel region, and the surface of the lower electrode (anode 15) is exposed. The surface of the conductive film in the peripheral region is also exposed. In this embodiment, polybenzoxazole is used, but other insulating materials such as positive photosensitive polyimide may be used.

Subsequently, the glass substrate 10 in this state is baked in an inert gas atmosphere such as N ₂ to cure the polybenzoxazole and be included in the first insulating film 11 and the second insulating film 12. Remove moisture.

Thereafter, spin cleaning is performed with pure water to remove minute foreign matters, followed by baking in a vacuum atmosphere, transported to the pretreatment chamber in a vacuum atmosphere, and the front surface of the substrate by O ₂ plasma. Next, an organic layer is deposited as the next step while maintaining a vacuum atmosphere. The process as described above is preferable because moisture in the atmosphere is prevented from being adsorbed on the substrate after the baking process.

  Next, on the lower electrode (anode 15) in the pixel opening, an organic layer in each color organic EL element (red organic EL element, green organic EL element, blue organic EL element), that is, a red organic layer, a green organic layer. And blue organic layers are formed.

  In this case, for example, in a vacuum atmosphere, the substrate is transported to a chamber for depositing the blue organic layer, the deposition mask is aligned on the substrate, and the inner wall of the pixel opening where the lower electrode is exposed at the bottom is covered. In this state, the hole injection layer 21, the hole transport layer 22, the light emitting layer 23, and the electron transport layer 24 are sequentially deposited to form a blue organic layer with a thickness of about 200 nm.

  Next, in a state where the vacuum atmosphere is maintained, the substrate is transported to a chamber for depositing the red organic layer, the deposition mask is aligned on the substrate, and the red organic layer is about 150 nm in the same manner as the blue organic layer. It is formed with a film thickness.

  Thereafter, the substrate is transported to a chamber for depositing the green organic layer in a vacuum atmosphere, the deposition mask is aligned on the substrate, and the green organic layer is formed to a film of about 100 nm in the same manner as the blue organic layer. Form with thickness.

  As described above, after forming each organic layer, the deposition mask is aligned on the substrate while maintaining the vacuum atmosphere, and the organic layer, the second insulating film 12 and the conductive film are formed on the substrate by, for example, vapor deposition. In addition, an electron injection layer (not shown) made of, for example, LiF is formed with a thickness of about 1 nm.

  Thereafter, an upper electrode (cathode 16) made of, for example, a semi-transmissive MgAg alloy is formed with a film thickness of about 10 nm on the electron injection layer by a vacuum evaporation method using this evaporation mask. Thereby, the conductive film and the upper electrode (cathode 16) are connected via the electron injection layer.

Thereafter, SiN _x (silicon nitride) is formed by CVD (chemical vapor deposition) using silane gas, ammonia gas, and nitrogen gas, which is the point of the present invention. The silicon nitride is formed so as to cover the organic layer and the upper electrode (cathode 16) which are the display regions 20 corresponding to the respective colors, and is configured as the protective film 17.

  After the protective film 17 is formed, the resin layer 18 is applied without exposure to the atmosphere, and the sealing layer 19 made of a glass substrate is formed to perform sealing. With the above method, a completely solid-sealed organic light emitting device is produced.

<Characteristic comparison of protective film>
Here, as a comparative sample for explaining the protective film of the present invention, a protective film described in JP 2007-184251 A was formed. The film thickness is 5.3 μm (Condition 1). Further, a film single layer of 1 μm in Condition 2 having good life characteristics of the protective film described in JP-A-2007-184251 was also formed (Condition 2).

The protective film according to the present invention is formed by a CVD method using ammonia gas, and the transmittance is 86% (wavelength 450 nm) and the flow rate is maintained by a flow rate ratio in which the ratio of silane gas to ammonia gas is 1: 2 or more By raising the pressure while maintaining the film, a film of {HYPERLINK "mailto: refractive index 1.71@450nm", refractive index n = 1.74 (wavelength 450nm}) was obtained. The film thickness is 0.5 μm. The above three types of films will be compared. A summary of the characteristics of these protective films is shown in FIG.

<Comparative Example 1>
Comparative Example 1 is a comparison result of the chromaticity deviation due to the film thickness distribution. First, FIG. 3 shows the result of measuring the refractive index value with respect to the wavelength for the above three types of films. Based on this result, the chromaticity change by the film thickness distribution of each color of RGB is shown in FIGS. In this figure, (a) shows the chromaticity change of red, (b) shows the chromaticity change of green, and (c) shows the chromaticity change of blue. The deviation of chromaticity u ′, v ′ is shown.

  From this figure, it can be seen that the influence of interference is averaged and not visible under condition 1, but appears as characteristic fluctuations when condition 2 is reached. When the condition 2 is compared with the present embodiment, it can be seen that the protective film of the present invention has a lower refractive index and thus is less susceptible to interference.

<Comparative example 2>
Comparative Example 2 is a result of comparison of efficiency improvement and variation accuracy by refractive index. FIG. 5 is a diagram showing a comparison result of the efficiency and variation of each color. In FIG. 5, for each color of RGB, the refractive index and film thickness by the protective film in the present invention, Condition 1 and Condition 2, the chromaticity (x, y coordinates) at that time, the efficiency value by the film thickness distribution of the protective film, The difference in efficiency when compared with condition 2 and the variation in efficiency (efficiency distribution due to film thickness distribution) are shown.

  From this figure, it can be seen that when Condition 1 and Condition 2 are compared, the refractive index does not change greatly, but the efficiency is improved because the film thickness is thin. However, since the refractive index is small, the variation in efficiency due to the variation in film thickness increases as the film thickness decreases. On the other hand, in the present invention, by decreasing the refractive index, there is a tendency that variation is suppressed while improving efficiency.

<Comparative Example 3>
The comparative example 3 is a comparison result about the improvement of lifetime. FIG. 6 is a diagram illustrating a change in luminance with respect to operating time under each condition. When the lifetime characteristics by brightness matching were performed, the efficiency at the same luminance was improved because the film thickness was reduced based on Comparative Example 1 and Comparative Example 2, so that the lifetime was improved in blue, which is most concerned. I can see that In addition, FIG. 7 shows the actual lifetime calculated by calculating the acceleration constant. FIG. 7 shows the half-life under each condition, and it can be seen that the lifetime is the longest when the protective film of the present invention is used.

  Next, an application example of the display device according to the present embodiment will be described.

<Electronic equipment>
The display device according to the present embodiment includes a flat module-shaped display as shown in FIG. For example, a pixel array portion 2002a in which pixels made up of a light emitting region, a thin film transistor, a light receiving element, and the like are integrated and formed in a matrix is provided on an insulating substrate 2002. An adhesive is provided so as to surround the pixel array portion (pixel matrix portion) 2002a. 2021 is provided, and a counter substrate 2006 such as glass is attached to form a display module. The transparent counter substrate 2006 may be provided with a color filter, a protective film, a light shielding film, and the like as necessary. For example, an FPC (flexible printed circuit) 2023 may be provided in the display module as a connector for inputting / outputting a signal or the like to / from the pixel array unit 2002a from the outside.

  The display device according to the present embodiment described above is input to various electronic devices shown in FIGS. 9 to 13 such as a digital camera, a notebook personal computer, a portable terminal device such as a mobile phone, and a video camera. The video signal generated or the video signal generated in the electronic device can be applied to a display device of an electronic device in any field for displaying as an image or a video. Below, an example of the electronic device to which this embodiment is applied is demonstrated.

  FIG. 9 is a perspective view showing a television to which the present embodiment is applied. The television according to this application example includes a video display screen unit 101 including a front panel 102, a filter glass 103, and the like, and is created by using the display device according to the present embodiment as the video display screen unit 101.

  FIG. 10 is a perspective view showing a digital camera to which the present embodiment is applied, in which (A) is a perspective view seen from the front side, and (B) is a perspective view seen from the back side. The digital camera according to this application example includes a light emitting unit 111 for flash, a display unit 112, a menu switch 113, a shutter button 114, and the like, and is manufactured by using the display device according to the present embodiment as the display unit 112. .

  FIG. 11 is a perspective view showing a notebook personal computer to which this embodiment is applied. A notebook personal computer according to this application example includes a main body 121 including a keyboard 122 that is operated when characters or the like are input, a display unit 123 that displays an image, and the like, and the display unit 123 includes a display device according to the present embodiment. It is produced by using.

  FIG. 12 is a perspective view showing a video camera to which the present embodiment is applied. The video camera according to this application example includes a main body 131, a subject shooting lens 132 on a side facing forward, a start / stop switch 133 at the time of shooting, a display unit 134, and the like. It is manufactured by using the display device according to the above.

  FIG. 13 is a view showing a mobile terminal device to which the present embodiment is applied, for example, a mobile phone, in which (A) is a front view in an opened state, (B) is a side view thereof, and (C) is closed. (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view. The mobile phone according to this application example includes an upper housing 141, a lower housing 142, a connecting portion (here, a hinge portion) 143, a display 144, a sub display 145, a picture light 146, a camera 147, and the like. In addition, the display device according to this embodiment is used as the sub display 145.

<Display imaging device>
The display device according to the present embodiment is applicable to the following display imaging device. In addition, the display imaging device can be applied to the various electronic devices described above. FIG. 14 illustrates the overall configuration of the display imaging apparatus. The display imaging apparatus includes an I / O display panel 2000, a backlight 1500, a display drive circuit 1200, a light receiving drive circuit 1300, an image processing unit 1400, and an application program execution unit 1100.

  The I / O display panel 2000 includes organic electroluminescent elements in which a plurality of pixels are arranged in a matrix over the entire surface, and displays an image such as a predetermined figure or character based on display data while performing line sequential operation. In addition to having a function (display function), as described later, it has a function (imaging function) for imaging an object that is in contact with or close to the I / O display 2000. The backlight 1500 is a light source of the I / O display panel 2000 in which, for example, a plurality of light emitting diodes are arranged, and at a high speed at a predetermined timing synchronized with the operation timing of the I / O display 2000 as described later. An on / off operation is performed.

  The display drive circuit 1200 drives the I / O display panel 2000 (drives line-sequential operation) so that an image based on display data is displayed on the I / O display panel 2000 (so as to perform a display operation). Circuit).

  The light receiving drive circuit 1300 is a circuit that drives the I / O display panel 2000 (drives line-sequential operation) so that light reception data can be obtained in the I / O display panel 2000 (so as to image an object). It is. The light reception data at each pixel is accumulated in the frame memory 1300A, for example, in units of frames, and is output to the image processing unit 14 as a captured image.

  The image processing unit 1400 performs predetermined image processing (arithmetic processing) based on the captured image output from the light receiving drive circuit 1300, and information (position coordinate data, object of the object) that is in contact with or close to the I / O display 2000. Data on the shape and size, etc.) are detected and acquired. The details of the detection process will be described later.

  The application program execution unit 1100 executes processing according to predetermined application software based on the detection result of the image processing unit 1400. For example, the display data includes the position coordinates of the detected object, and the I / O What is displayed on the display panel 2000 is mentioned. The display data generated by the application program execution unit 1100 is supplied to the display drive circuit 1200.

  Next, a detailed configuration example of the I / O display panel 2000 will be described with reference to FIG. The I / O display panel 2000 includes a display area (sensor area) 2100, a display H driver 2200, a display V driver 2300, a sensor readout H driver 2500, and a sensor V driver 2400. Yes.

  The display area (sensor area) 2100 is an area that modulates light from the organic electroluminescent element to emit display light and images an object that is in contact with or close to the area, and is an organic light emitting element (display element). Electroluminescent elements and light receiving elements (imaging elements), which will be described later, are arranged in a matrix.

  The display H driver 2200 drives the organic electroluminescence element of each pixel in the display area 2100 together with the display V driver 2300 based on the display drive display signal and the control clock supplied from the display drive circuit 1200. It is.

  The sensor readout H driver 2500 drives the light receiving element of each pixel in the sensor area 2100 together with the sensor V driver 2400 to obtain a light reception signal.

  Next, a connection relationship between each pixel in the display area 2100 and the sensor readout H driver 2500 will be described with reference to FIG. In this display area 2100, a red (R) pixel 3100, a green (G) pixel 3200, and a blue (B) pixel 3300 are arranged side by side.

  The charges accumulated in the capacitors connected to the light receiving sensors 3100c, 3200c, and 3300c of each pixel are amplified by the respective buffer amplifiers 3100f, 3200f, and 3300f, and the signals are output at the timing when the readout switches 3100g, 3200g, and 3300g are turned on. It is supplied to the sensor reading H driver 2500 via the output electrode. Each signal output electrode is connected to a constant current source 4100a, 4100b, 4100c, and a signal corresponding to the amount of received light is detected with high sensitivity by the sensor reading H driver 2500.

  DESCRIPTION OF SYMBOLS 10 ... Glass substrate, 11 ... 1st insulating film, 12 ... 2nd insulating film, 15 ... Anode, 16 ... Cathode, 17 ... Protective film, 18 ... Resin layer, 19 ... Sealing layer, 21 ... Hole injection layer, 22 ... hole transport layer, 23 ... light emitting layer, 24 ... electron transport layer

Claims (16)

A display region having an organic layer including a light emitting layer between the lower electrode and the upper electrode;
A protective film formed in a state of covering the display area and made of silicon nitride;
A resin layer formed on the protective film,
The protective film is formed by a chemical vapor deposition method using ammonia gas, and is obtained by a flow rate ratio in which the ratio of silane gas to ammonia gas is 1: 2 or more. The refractive index of the resin layer is 1.5 to 1.6,
The display device according to claim 1, wherein the protective film has a refractive index of 1.65 or more and 1.75 or less at a wavelength of 450 nm.   The display device according to claim 1, wherein the display region includes a resonator structure that resonates light generated in the light emitting layer.   The display device according to claim 1, wherein the protective film is formed of a single layer of silicon nitride.   The display device according to claim 1, wherein the stress of the protective film is substantially zero.   The display device according to claim 1, wherein the protective film has a thickness of 100 nm or more and 1 μm or less.   The display device according to claim 1, wherein the display area is covered with the protective film without being exposed to the atmosphere.   The display device according to claim 1, wherein the display region extracts light generated in the light emitting layer from a side of the upper electrode.   The display device according to claim 1, wherein a refractive index difference between the protective film and the resin layer at a wavelength of 450 nm is 0.3 or less.   The display device according to claim 1, further comprising a sealing layer attached by the resin layer.   The display device according to claim 1, wherein the upper electrode is made of an MgAg alloy.   The display device according to claim 1, wherein the upper electrode covers the organic layer.   The display device according to claim 1, wherein the protective film covers the organic layer formed in a state of covering the organic layer and the upper electrode. A display region having an organic layer including a light emitting layer between the lower electrode and the upper electrode;
A protective film formed in a state of covering the display area and made of silicon nitride;
In manufacturing a display device comprising a resin layer formed on the protective film,
A method for manufacturing a display device, wherein the protective film is formed by a chemical vapor deposition method using ammonia gas at a flow ratio in which the ratio of silane gas to ammonia gas is 1: 2 or more.   The method for manufacturing a display device according to claim 14, wherein the protective film is formed by increasing pressure while maintaining a flow rate of the flow rate ratio. A display device is provided in the main body casing,
The display device
A display region having an organic layer including a light emitting layer between the lower electrode and the upper electrode;
A protective film formed in a state of covering the display area and made of silicon nitride;
A resin layer formed on the protective film,
The protective film is an electronic device formed by a chemical vapor deposition method using ammonia gas and obtained by a flow rate ratio in which the ratio of silane gas to ammonia gas is 1: 2 or more.

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