JP2012532342A5 - - Google Patents
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- Publication number
- JP2012532342A5 JP2012532342A5 JP2012517867A JP2012517867A JP2012532342A5 JP 2012532342 A5 JP2012532342 A5 JP 2012532342A5 JP 2012517867 A JP2012517867 A JP 2012517867A JP 2012517867 A JP2012517867 A JP 2012517867A JP 2012532342 A5 JP2012532342 A5 JP 2012532342A5
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- polar protic
- protic solvent
- precursor
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims 2
- 239000003586 protic polar solvent Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- GQNYZFMTYSVKQV-UHFFFAOYSA-N [Mo+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] Chemical compound [Mo+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] GQNYZFMTYSVKQV-UHFFFAOYSA-N 0.000 claims 1
- 230000027455 binding Effects 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- FAQSSRBQWPBYQC-UZUXQKAQSA-N dioxomolybdenum;(Z)-4-hydroxypent-3-en-2-one;(E)-4-hydroxypent-3-en-2-one Chemical compound O=[Mo]=O.C\C(O)=C\C(C)=O.C\C(O)=C/C(C)=O FAQSSRBQWPBYQC-UZUXQKAQSA-N 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000003446 ligand Substances 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
Claims (1)
- 担体溶媒と、
シルセスキオキサンを含む二酸化ケイ素前駆体と、
極性プロトン性溶媒、および
モリブデン（V）エトキシド、
モリブデン（VI）オキシドビス（2,4-ペンタンジオナート）、または
Lが有機分子またはリガンドを含む、MoxLy
のうちの少なくとも一つを含む溶液から、該極性プロトン性溶媒を蒸発させることによって形成された、モリブデン前駆体と
を混合することによって形成された、ゾルゲル組成物。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22209609P | 2009-06-30 | 2009-06-30 | |
| US61/222,096 | 2009-06-30 | ||
| PCT/US2010/040470 WO2011002806A1 (en) | 2009-06-30 | 2010-06-29 | Advanced photomask repair |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012532342A JP2012532342A (ja) | 2012-12-13 |
| JP2012532342A5 true JP2012532342A5 (ja) | 2013-08-15 |
Family
ID=42799670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012517867A Pending JP2012532342A (ja) | 2009-06-30 | 2010-06-29 | フォトマスクの修復方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20120164564A1 (ja) |
| EP (1) | EP2449427A1 (ja) |
| JP (1) | JP2012532342A (ja) |
| KR (1) | KR20120104966A (ja) |
| AU (1) | AU2010266375A1 (ja) |
| CA (1) | CA2766589A1 (ja) |
| WO (1) | WO2011002806A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9665000B1 (en) | 2015-11-16 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for EUV mask cleaning with non-thermal solution |
| FR3061210B1 (fr) * | 2016-12-22 | 2021-12-24 | Electricite De France | Procede sol-gel de fabrication d'un revetement anticorrosion sur substrat metallique |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 沈積方法 |
| KR102083308B1 (ko) | 2018-05-23 | 2020-04-23 | 한국표준과학연구원 | 탐침형 원자 현미경을 이용한 리소그래피 방법 |
| KR102092653B1 (ko) * | 2019-06-28 | 2020-06-01 | (주)네프코 | 방오코팅 포토마스크의 패턴 유실 결함 수리 방법 |
| CN111165904A (zh) * | 2020-01-07 | 2020-05-19 | 云南中烟工业有限责任公司 | 一种低表面能镍铬加热丝、其制备方法及用途 |
| CN111812357B (zh) * | 2020-07-10 | 2021-05-25 | 浙江大学 | 一种用于微纳米制造的自填料三臂式热扫描探针 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213660A (ja) * | 1983-05-13 | 1984-12-03 | 鐘淵化学工業株式会社 | 多孔性セラミツクス薄膜およびその製造法 |
| US5320868A (en) * | 1993-09-13 | 1994-06-14 | Dow Corning Corporation | Method of forming SI-O containing coatings |
| WO1997010282A1 (en) | 1995-09-12 | 1997-03-20 | Gelest, Inc. | Beta-substituted organosilsesquioxanes and use thereof |
| JP3529953B2 (ja) * | 1996-09-03 | 2004-05-24 | 株式会社東芝 | 絶縁膜パターンの形成方法および感光性組成物 |
| JP3195265B2 (ja) * | 1997-01-18 | 2001-08-06 | 東京応化工業株式会社 | Ｂｉ系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ |
| JP2000010293A (ja) * | 1998-06-17 | 2000-01-14 | Jsr Corp | 反射防止膜形成用組成物および反射防止膜 |
| US6635311B1 (en) | 1999-01-07 | 2003-10-21 | Northwestern University | Methods utilizing scanning probe microscope tips and products therefor or products thereby |
| EP1502154B1 (en) | 2001-12-17 | 2009-02-18 | Northwestern University | Patterning of solid state features by direct write nanolithographic printing |
| US7011910B2 (en) | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| US7491422B2 (en) | 2002-10-21 | 2009-02-17 | Nanoink, Inc. | Direct-write nanolithography method of transporting ink with an elastomeric polymer coated nanoscopic tip to form a structure having internal hollows on a substrate |
| JP2006504136A (ja) * | 2002-10-21 | 2006-02-02 | ナノインク インコーポレーティッド | ナノメートル・スケール設計構造、その製造方法および装置、マスク修復、強化、および製造への適用 |
-
2010
- 2010-06-29 US US13/381,590 patent/US20120164564A1/en not_active Abandoned
- 2010-06-29 AU AU2010266375A patent/AU2010266375A1/en not_active Abandoned
- 2010-06-29 KR KR1020127001510A patent/KR20120104966A/ko not_active Application Discontinuation
- 2010-06-29 WO PCT/US2010/040470 patent/WO2011002806A1/en active Application Filing
- 2010-06-29 CA CA2766589A patent/CA2766589A1/en not_active Abandoned
- 2010-06-29 EP EP10732565A patent/EP2449427A1/en not_active Withdrawn
- 2010-06-29 JP JP2012517867A patent/JP2012532342A/ja active Pending
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