JP2012528472A5 - - Google Patents

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Publication number
JP2012528472A5
JP2012528472A5 JP2012512270A JP2012512270A JP2012528472A5 JP 2012528472 A5 JP2012528472 A5 JP 2012528472A5 JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012528472 A5 JP2012528472 A5 JP 2012528472A5
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JP
Japan
Prior art keywords
semiconductor chip
radiation
roughened region
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012512270A
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English (en)
Japanese (ja)
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JP2012528472A (ja
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Publication date
Priority claimed from DE102009023351A external-priority patent/DE102009023351A1/de
Application filed filed Critical
Publication of JP2012528472A publication Critical patent/JP2012528472A/ja
Publication of JP2012528472A5 publication Critical patent/JP2012528472A5/ja
Pending legal-status Critical Current

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JP2012512270A 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Pending JP2012528472A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009023351A DE102009023351A1 (de) 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102009023351.2 2009-05-29
PCT/EP2010/054662 WO2010136251A1 (de) 2009-05-29 2010-04-08 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (2)

Publication Number Publication Date
JP2012528472A JP2012528472A (ja) 2012-11-12
JP2012528472A5 true JP2012528472A5 (https=) 2013-02-28

Family

ID=42269418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012512270A Pending JP2012528472A (ja) 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法

Country Status (7)

Country Link
US (2) US8900888B2 (https=)
EP (1) EP2436045B1 (https=)
JP (1) JP2012528472A (https=)
KR (1) KR20120027035A (https=)
CN (1) CN102428579B (https=)
DE (1) DE102009023351A1 (https=)
WO (1) WO2010136251A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454303B2 (ja) * 2010-03-30 2014-03-26 ソニー株式会社 半導体発光素子アレイ
CN103137812B (zh) * 2011-12-03 2015-11-25 清华大学 发光二极管
CN103137816B (zh) * 2011-12-03 2015-09-30 清华大学 发光二极管
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
KR101365229B1 (ko) * 2013-05-28 2014-02-19 부경대학교 산학협력단 백색 ｌｅｄ와 그 제조방법
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
DE102018107615B4 (de) * 2017-09-06 2024-08-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN108319066B (zh) * 2018-02-11 2022-03-22 京东方科技集团股份有限公司 彩膜基板及其制造方法、显示装置
DE102018105085B4 (de) * 2018-03-06 2024-05-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil und Leuchtmittel
US20200194631A1 (en) 2018-12-14 2020-06-18 Osram Opto Semiconductors Gmbh Method for Producing a Light-Emitting Semiconductor Device and Light-Emitting Semiconductor Device
DE102020103070A1 (de) * 2020-02-06 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement
DE102024109325A1 (de) * 2024-04-03 2025-10-09 Ams-Osram International Gmbh Verfahren zur herstellung einer vielzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
HK1048709A1 (zh) 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
CN1849713A (zh) * 2003-09-08 2006-10-18 第四族半导体有限公司 固态白光发射器及使用其的显示器
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
FR2898434B1 (fr) 2006-03-13 2008-05-23 Centre Nat Rech Scient Diode electroluminescente blanche monolithique
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
KR100723233B1 (ko) * 2006-03-31 2007-05-29 삼성전기주식회사 백색 발광 소자
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR100826379B1 (ko) * 2006-08-08 2008-05-02 삼성전기주식회사 모노리식 백색 발광소자
WO2008060594A2 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California High light extraction efficiency light emitting diode (led) through multiple extractors
WO2008060615A1 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Transparent mirrorless light emitting diode
EP2087563B1 (en) 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
DE102007004304A1 (de) * 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
KR100856282B1 (ko) * 2007-03-05 2008-09-03 삼성전기주식회사 광자 리사이클링을 이용한 광자결정 발광소자
DE112008003200A5 (de) * 2007-09-28 2010-09-16 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
EP2206164A2 (en) * 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US20100295075A1 (en) 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
TWI416757B (zh) * 2008-10-13 2013-11-21 榮創能源科技股份有限公司 多波長發光二極體及其製造方法
CN101728462A (zh) 2008-10-17 2010-06-09 先进开发光电股份有限公司 多波长发光二极管及其制造方法
KR101125395B1 (ko) * 2009-10-28 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법

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