DE102009023351A1 - Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips - Google Patents

Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips Download PDF

Info

Publication number
DE102009023351A1
DE102009023351A1 DE102009023351A DE102009023351A DE102009023351A1 DE 102009023351 A1 DE102009023351 A1 DE 102009023351A1 DE 102009023351 A DE102009023351 A DE 102009023351A DE 102009023351 A DE102009023351 A DE 102009023351A DE 102009023351 A1 DE102009023351 A1 DE 102009023351A1
Authority
DE
Germany
Prior art keywords
semiconductor chip
roughening
radiation
conversion layers
optoelectronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009023351A
Other languages
German (de)
English (en)
Inventor
Nikolaus Dr. Gmeinwieser
Berthold Dr. Hahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102009023351A priority Critical patent/DE102009023351A1/de
Priority to US13/318,818 priority patent/US8900888B2/en
Priority to CN201080021820.9A priority patent/CN102428579B/zh
Priority to PCT/EP2010/054662 priority patent/WO2010136251A1/de
Priority to EP10713203.7A priority patent/EP2436045B1/de
Priority to JP2012512270A priority patent/JP2012528472A/ja
Priority to KR1020117031462A priority patent/KR20120027035A/ko
Publication of DE102009023351A1 publication Critical patent/DE102009023351A1/de
Priority to US14/526,713 priority patent/US9306131B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE102009023351A 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips Withdrawn DE102009023351A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102009023351A DE102009023351A1 (de) 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US13/318,818 US8900888B2 (en) 2009-05-29 2010-04-08 Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
CN201080021820.9A CN102428579B (zh) 2009-05-29 2010-04-08 光电子半导体芯片和用于制造光电子半导体芯片的方法
PCT/EP2010/054662 WO2010136251A1 (de) 2009-05-29 2010-04-08 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
EP10713203.7A EP2436045B1 (de) 2009-05-29 2010-04-08 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
JP2012512270A JP2012528472A (ja) 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法
KR1020117031462A KR20120027035A (ko) 2009-05-29 2010-04-08 광전 반도체 칩 및 광전 반도체 칩을 제조하기 위한 방법
US14/526,713 US9306131B2 (en) 2009-05-29 2014-10-29 Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009023351A DE102009023351A1 (de) 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Publications (1)

Publication Number Publication Date
DE102009023351A1 true DE102009023351A1 (de) 2010-12-02

Family

ID=42269418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009023351A Withdrawn DE102009023351A1 (de) 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Country Status (7)

Country Link
US (2) US8900888B2 (https=)
EP (1) EP2436045B1 (https=)
JP (1) JP2012528472A (https=)
KR (1) KR20120027035A (https=)
CN (1) CN102428579B (https=)
DE (1) DE102009023351A1 (https=)
WO (1) WO2010136251A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102015105693A1 (de) * 2015-04-14 2016-10-20 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
CN110233196A (zh) * 2018-03-06 2019-09-13 欧司朗光电半导体有限公司 光电子器件和发光机构

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454303B2 (ja) * 2010-03-30 2014-03-26 ソニー株式会社 半導体発光素子アレイ
CN103137812B (zh) * 2011-12-03 2015-11-25 清华大学 发光二极管
CN103137816B (zh) * 2011-12-03 2015-09-30 清华大学 发光二极管
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
KR101365229B1 (ko) * 2013-05-28 2014-02-19 부경대학교 산학협력단 백색 ｌｅｄ와 그 제조방법
DE102018107615B4 (de) * 2017-09-06 2024-08-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN108319066B (zh) * 2018-02-11 2022-03-22 京东方科技集团股份有限公司 彩膜基板及其制造方法、显示装置
US20200194631A1 (en) 2018-12-14 2020-06-18 Osram Opto Semiconductors Gmbh Method for Producing a Light-Emitting Semiconductor Device and Light-Emitting Semiconductor Device
DE102020103070A1 (de) * 2020-02-06 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement
DE102024109325A1 (de) * 2024-04-03 2025-10-09 Ams-Osram International Gmbh Verfahren zur herstellung einer vielzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050051777A1 (en) * 2003-09-08 2005-03-10 Hill Steven E. Solid state white light emitter and display using same
US20070221867A1 (en) * 2006-03-24 2007-09-27 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
WO2009048704A2 (en) * 2007-10-08 2009-04-16 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
HK1048709A1 (zh) 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
FR2898434B1 (fr) 2006-03-13 2008-05-23 Centre Nat Rech Scient Diode electroluminescente blanche monolithique
KR100723233B1 (ko) * 2006-03-31 2007-05-29 삼성전기주식회사 백색 발광 소자
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR100826379B1 (ko) * 2006-08-08 2008-05-02 삼성전기주식회사 모노리식 백색 발광소자
WO2008060594A2 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California High light extraction efficiency light emitting diode (led) through multiple extractors
WO2008060615A1 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Transparent mirrorless light emitting diode
EP2087563B1 (en) 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
DE102007004304A1 (de) * 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
KR100856282B1 (ko) * 2007-03-05 2008-09-03 삼성전기주식회사 광자 리사이클링을 이용한 광자결정 발광소자
DE112008003200A5 (de) * 2007-09-28 2010-09-16 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
US20100295075A1 (en) 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
TWI416757B (zh) * 2008-10-13 2013-11-21 榮創能源科技股份有限公司 多波長發光二極體及其製造方法
CN101728462A (zh) 2008-10-17 2010-06-09 先进开发光电股份有限公司 多波长发光二极管及其制造方法
KR101125395B1 (ko) * 2009-10-28 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050051777A1 (en) * 2003-09-08 2005-03-10 Hill Steven E. Solid state white light emitter and display using same
US20070221867A1 (en) * 2006-03-24 2007-09-27 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
WO2009048704A2 (en) * 2007-10-08 2009-04-16 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102015105693A1 (de) * 2015-04-14 2016-10-20 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US10388829B2 (en) 2015-04-14 2019-08-20 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor device
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
CN110233196A (zh) * 2018-03-06 2019-09-13 欧司朗光电半导体有限公司 光电子器件和发光机构
CN110233196B (zh) * 2018-03-06 2023-10-27 欧司朗光电半导体有限公司 光电子器件和发光机构

Also Published As

Publication number Publication date
JP2012528472A (ja) 2012-11-12
US20120132945A1 (en) 2012-05-31
CN102428579A (zh) 2012-04-25
CN102428579B (zh) 2015-02-25
WO2010136251A1 (de) 2010-12-02
US8900888B2 (en) 2014-12-02
KR20120027035A (ko) 2012-03-20
EP2436045A1 (de) 2012-04-04
EP2436045B1 (de) 2017-01-25
US20150053919A1 (en) 2015-02-26
US9306131B2 (en) 2016-04-05

Similar Documents

Publication Publication Date Title
DE102009023351A1 (de) Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE69434745T2 (de) Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial und Verfahren zur Herstellung eines Halbleiterbauelements mit einem solchen Aggregat
DE102012217640B4 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
EP0944918B9 (de) Verfahren zum herstellen von halbleiterkörpern mit movpe-schichtenfolge
DE102012109460A1 (de) Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
EP2638575A1 (de) Optoelektronischer halbleiterchip und verfahren zu dessen herstellung
DE102009057780A1 (de) Optoelektronisches Halbleiterbauteil und photonischer Kristall
WO2015121062A1 (de) Verfahren zur herstellung eines optoelektronischen halbleiterbauteils sowie optoelektronisches halbleiterbauteil
WO2018077957A1 (de) Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
DE102010013494A1 (de) Optoelektronischer Halbleiterchip
DE102013110733A1 (de) Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102008039790A1 (de) Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102008062932A1 (de) Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
EP3327796B1 (de) Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
WO2014060318A1 (de) Strahlungsemittierendes bauelement
WO2019115344A1 (de) Lichtemittierendes halbleiterbauteil und verfahren zur herstellung eines licht emittierenden halbleiterbauteils
DE10147886A1 (de) Lumineszenzdiode und Herstellungsverfahren
WO2020114759A1 (de) Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen
WO2017129446A1 (de) Konversionselement und strahlungsemittierendes halbleiterbauelement mit einem solchen konversionselement
WO2020035498A1 (de) Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
WO2020038743A1 (de) Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
WO2019175168A1 (de) Multipixelchip und verfahren zur herstellung eines multipixelchips
DE112022005756T5 (de) Epitaktisch gewachsene konverterschicht, optoelektronische anordnung und verfahren zur herstellung derselben
WO2020151963A1 (de) Verfahren zur herstellung eines strahlungsemittierenden halbleiterbauteils und strahlungsemittierendes halbleiterbauteil
WO2017174730A1 (de) Verfahren zur herstellung von optoelektronischen halbleiterbauelementen und optoelektronisches halbleiterbauelement

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
R005 Application deemed withdrawn due to failure to request examination