JP2012523708A - 基板処理技術 - Google Patents
基板処理技術 Download PDFInfo
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- JP2012523708A JP2012523708A JP2012504867A JP2012504867A JP2012523708A JP 2012523708 A JP2012523708 A JP 2012523708A JP 2012504867 A JP2012504867 A JP 2012504867A JP 2012504867 A JP2012504867 A JP 2012504867A JP 2012523708 A JP2012523708 A JP 2012523708A
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- 239000000758 substrate Substances 0.000 title claims abstract description 154
- 238000012545 processing Methods 0.000 title claims abstract description 34
- 238000005516 engineering process Methods 0.000 title description 20
- 238000005468 ion implantation Methods 0.000 claims abstract description 48
- 238000010884 ion-beam technique Methods 0.000 claims description 140
- 150000002500 ions Chemical class 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 53
- 239000002019 doping agent Substances 0.000 description 47
- 125000006850 spacer group Chemical group 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 238000002513 implantation Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000005355 lead glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/2457—Parallel ribs and/or grooves
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
【選択図】図5a
Description
Claims (20)
- 基板処理に用いられるマスクであって、
第1のベース部と、
離間して配され、1以上の隙間を形成する複数のフィンガー部と、
を備えるマスク。 - 前記複数のフィンガー部のそれぞれは、第1の端部および第2の端部を有し、
前記第1の端部は、前記第1のベース部上に配される、
請求項1に記載のマスク。 - 前記複数のフィンガー部の前記第2の端部は、支持されていない、
請求項2に記載のマスク。 - 前記マスクは、石英、グラファイト、サファイア、シリコン、炭化シリコンおよび窒化シリコンから選択される少なくとも1つの材料を含む、
請求項1に記載のマスク。 - 基板を処理する装置であって、
目的とする種のイオンを含むイオンビームを発生させるイオン源と、
前記基板を収容するエンドステーションと、
前記イオン源および前記基板の間に配されるマスクと、
を備え、
前記基板および前記マスクの一方は、前記基板および前記マスクの他方に対して移動するように構成される、
装置。 - 前記マスクは、前記イオンビームに対して特定の位置に位置決めされる、
請求項5に記載の装置。 - 前記マスクは、前記基板の全高よりも短い、
請求項5に記載の装置。 - 前記マスクの少なくとも一部は、前記イオンビームの全高よりも短い、
請求項5に記載の装置。 - 前記イオンビームは、第1の部分および第2の部分を含み、
前記マスクは、互いに離間して配され、1以上の隙間を形成する複数のフィンガー部を有し、
前記複数のフィンガー部は、前記イオンビームの前記第1の部分の軌道中に配される、
請求項5に記載の装置。 - 前記複数のフィンガー部は、前記イオンビームの前記第2の部分の軌道中に配されない、
請求項9に記載の装置。 - 前記イオンビームの前記第1の部分の高さは、前記イオンビームの前記第2の部分の高さと実質的に等しい、
請求項10に記載の装置。 - 前記イオンビームの前記第1の部分の高さは、前記イオンビームの前記第2の部分の高さより大きい、
請求項10に記載の装置。 - 前記イオンビームの前記第1の部分の高さと、前記イオンビームの前記第2の部分の高さとの比は、おおよそ3:2である、
請求項12に記載の装置。 - 前記イオンビームの前記第1の部分の高さは、前記イオンビームの前記第2の部分の高さより小さい、
請求項10に記載の装置。 - 前記イオンビームの前記第1の部分の高さと、前記イオンビームの前記第2の部分の高さとの比は、おおよそ2:3である、
請求項14に記載の装置。 - 選択的なイオン注入を実施すべく、前記イオンビームの前記第1の部分からのイオンの一部が、前記1以上の隙間を通過して前記基板に注入される、
請求項10に記載の装置。 - ブランケット・イオン注入を実施すべく、前記イオンビームの前記第2の部分からのイオンが、前記基板に注入される、
請求項10に記載の装置。 - 基板を処理する装置であって、
目的とする種のイオンを含むイオンビームを発生させるイオン源と、
前記基板を収容するエンドステーションと、
前記イオン源および前記基板の間に配されるマスクと、
を備え、
前記マスクは、互いに離間して配され、1以上の隙間を形成する複数のフィンガー部を有し、
前記複数のフィンガー部の高さ方向の長さは、前記イオンビームの全高よりも短い、
装置。 - 前記マスクおよび前記基板の少なくとも一方が、前記マスクおよび前記基板の他方に対して移動させられる、
請求項18に記載の装置。 - 前記イオンビームは、前記イオンビームの対辺に配される第1の部分および第2の部分を含み、
前記イオンビームの前記第1の部分からのイオンが、前記基板上でブランケット・イオン注入を実施し、前記イオンビームの前記第2の部分からのイオンが、前記基板上で選択的なイオン注入を実施するように構成される、
請求項18に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16755009P | 2009-04-08 | 2009-04-08 | |
US61/167,550 | 2009-04-08 | ||
US12/756,020 | 2010-04-07 | ||
US12/756,020 US9006688B2 (en) | 2009-04-08 | 2010-04-07 | Techniques for processing a substrate using a mask |
PCT/US2010/030400 WO2010118237A2 (en) | 2009-04-08 | 2010-04-08 | Techniques for processing a substrate |
Publications (3)
Publication Number | Publication Date |
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JP2012523708A true JP2012523708A (ja) | 2012-10-04 |
JP2012523708A5 JP2012523708A5 (ja) | 2014-08-14 |
JP5773317B2 JP5773317B2 (ja) | 2015-09-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012504867A Expired - Fee Related JP5773317B2 (ja) | 2009-04-08 | 2010-04-08 | マスクおよび装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9006688B2 (ja) |
EP (1) | EP2417624A4 (ja) |
JP (1) | JP5773317B2 (ja) |
KR (1) | KR101661235B1 (ja) |
CN (1) | CN102428541B (ja) |
TW (1) | TWI556341B (ja) |
WO (1) | WO2010118237A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018014486A (ja) * | 2016-06-06 | 2018-01-25 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | パワー半導体素子を処理するためのエネルギフィルタ |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9076914B2 (en) * | 2009-04-08 | 2015-07-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US8900982B2 (en) | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US20110027463A1 (en) * | 2009-06-16 | 2011-02-03 | Varian Semiconductor Equipment Associates, Inc. | Workpiece handling system |
US8071418B2 (en) | 2010-06-03 | 2011-12-06 | Suniva, Inc. | Selective emitter solar cells formed by a hybrid diffusion and ion implantation process |
US8110431B2 (en) | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
US20110139231A1 (en) * | 2010-08-25 | 2011-06-16 | Daniel Meier | Back junction solar cell with selective front surface field |
US8461556B2 (en) | 2010-09-08 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Using beam blockers to perform a patterned implant of a workpiece |
CN102891207A (zh) * | 2011-07-19 | 2013-01-23 | 上海凯世通半导体有限公司 | 用于太阳能晶片掺杂的束流传输系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2591842A (en) * | 1949-07-06 | 1952-04-08 | Bell Telephone Labor Inc | Electron discharge apparatus |
JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
JPH08318387A (ja) * | 1995-03-17 | 1996-12-03 | Ebara Corp | エネルギービームによる処理方法および処理装置 |
JP2007163640A (ja) * | 2005-12-12 | 2007-06-28 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置の製造方法及び製造装置 |
JP2012516551A (ja) * | 2008-11-20 | 2012-07-19 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 太陽電池の製造技術 |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4086102A (en) | 1976-12-13 | 1978-04-25 | King William J | Inexpensive solar cell and method therefor |
EP0203215B1 (de) * | 1985-05-29 | 1990-02-21 | Ibm Deutschland Gmbh | Verfahren zur Reparatur von Transmissionsmasken |
JPS63136618A (ja) | 1986-11-28 | 1988-06-08 | Sony Corp | エネルギ−照射方法 |
JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
JPH05303954A (ja) | 1992-04-07 | 1993-11-16 | Nec Corp | イオン注入装置 |
US5369282A (en) | 1992-08-03 | 1994-11-29 | Fujitsu Limited | Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput |
US5468595A (en) * | 1993-01-29 | 1995-11-21 | Electron Vision Corporation | Method for three-dimensional control of solubility properties of resist layers |
US5523576A (en) * | 1993-03-15 | 1996-06-04 | Kabushiki Kaisha Toshiba | Charged beam drawing apparatus |
EP0732624B1 (en) * | 1995-03-17 | 2001-10-10 | Ebara Corporation | Fabrication method with energy beam |
US6429440B1 (en) | 1998-06-16 | 2002-08-06 | Asml Netherlands B.V. | Lithography apparatus having a dynamically variable illumination beam |
JP3706527B2 (ja) * | 1999-06-30 | 2005-10-12 | Hoya株式会社 | 電子線描画用マスクブランクス、電子線描画用マスクおよび電子線描画用マスクの製造方法 |
JP3353064B2 (ja) | 2000-02-17 | 2002-12-03 | 独立行政法人物質・材料研究機構 | イオン注入装置および方法 |
JP2002203806A (ja) | 2000-10-31 | 2002-07-19 | Toshiba Corp | 半導体装置の製造方法、ステンシルマスク及びその製造方法 |
AU2001266847A1 (en) | 2000-11-30 | 2002-06-11 | Semequip, Inc. | Ion implantation system and control method |
JP4252237B2 (ja) | 2000-12-06 | 2009-04-08 | 株式会社アルバック | イオン注入装置およびイオン注入方法 |
JP2002202585A (ja) * | 2000-12-27 | 2002-07-19 | Hitachi Ltd | フォトマスクの製造方法および半導体集積回路装置の製造方法 |
FR2823005B1 (fr) | 2001-03-28 | 2003-05-16 | Centre Nat Rech Scient | Dispositif de generation d'un faisceau d'ions et procede de reglage de ce faisceau |
JP3674573B2 (ja) * | 2001-06-08 | 2005-07-20 | ソニー株式会社 | マスクおよびその製造方法と半導体装置の製造方法 |
US20030089863A1 (en) * | 2001-10-02 | 2003-05-15 | Nikon Corporation | Beam-calibration methods for charged-particle-beam microlithography systems |
US7288466B2 (en) | 2002-05-14 | 2007-10-30 | Kabushiki Kaisha Toshiba | Processing method, manufacturing method of semiconductor device, and processing apparatus |
JP4443816B2 (ja) | 2002-09-06 | 2010-03-31 | シャープ株式会社 | イオンドーピング装置及びイオンドーピング装置用多孔電極 |
JP2004207385A (ja) * | 2002-12-24 | 2004-07-22 | Rohm Co Ltd | マスク、その製造方法およびこれを用いた半導体装置の製造方法 |
JP2004207571A (ja) | 2002-12-26 | 2004-07-22 | Toshiba Corp | 半導体装置の製造方法、半導体製造装置及びステンシルマスク |
KR100454846B1 (ko) | 2002-12-27 | 2004-11-03 | 엘지.필립스 엘시디 주식회사 | 배향막을 형성하기 위한 이온 빔 조사 장치 |
US6677598B1 (en) * | 2003-04-29 | 2004-01-13 | Axcelis Technologies, Inc. | Beam uniformity and angular distribution measurement system |
JP2004348118A (ja) | 2003-04-30 | 2004-12-09 | Toshiba Corp | フォトマスク及びそれを用いた露光方法、データ発生方法 |
JP4112472B2 (ja) | 2003-10-21 | 2008-07-02 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置の製造装置 |
US7012022B2 (en) | 2003-10-30 | 2006-03-14 | Chartered Semiconductor Manufacturing Ltd. | Self-patterning of photo-active dielectric materials for interconnect isolation |
JP2006024624A (ja) | 2004-07-06 | 2006-01-26 | Toshiba Corp | 荷電ビーム描画装置およびアパーチャ調整方法 |
US7799517B1 (en) * | 2004-08-31 | 2010-09-21 | Globalfoundries Inc. | Single/double dipole mask for contact holes |
DE102004052994C5 (de) | 2004-11-03 | 2010-08-26 | Vistec Electron Beam Gmbh | Multistrahlmodulator für einen Partikelstrahl und Verwendung des Multistrahlmodulators zur maskenlosen Substratsstrukturierung |
US7576341B2 (en) | 2004-12-08 | 2009-08-18 | Samsung Electronics Co., Ltd. | Lithography systems and methods for operating the same |
US7394070B2 (en) * | 2004-12-27 | 2008-07-01 | Hitachi High-Technologies Corporation | Method and apparatus for inspecting patterns |
US20060258128A1 (en) | 2005-03-09 | 2006-11-16 | Peter Nunan | Methods and apparatus for enabling multiple process steps on a single substrate |
US7670956B2 (en) * | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
US7259373B2 (en) | 2005-07-08 | 2007-08-21 | Nexgensemi Holdings Corporation | Apparatus and method for controlled particle beam manufacturing |
US7446326B2 (en) | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
JP2007115999A (ja) * | 2005-10-21 | 2007-05-10 | Toshiba Corp | キャラクタプロジェクション(cp)方式の荷電粒子ビーム露光方法、キャラクタプロジェクション方式の荷電粒子ビーム露光装置及びプログラム |
US7329882B2 (en) * | 2005-11-29 | 2008-02-12 | Axcelis Technologies, Inc. | Ion implantation beam angle calibration |
KR100732770B1 (ko) | 2006-02-13 | 2007-06-27 | 주식회사 하이닉스반도체 | 불균일 이온 주입 장비 및 방법 |
JP4882456B2 (ja) | 2006-03-31 | 2012-02-22 | 株式会社Ihi | イオン注入装置 |
JP2007287973A (ja) | 2006-04-18 | 2007-11-01 | Toyota Motor Corp | ステンシルマスクとその利用方法とそれを利用する荷電粒子注入装置 |
JP2007286427A (ja) * | 2006-04-18 | 2007-11-01 | Sony Corp | マスクパターン生成方法 |
US7528391B2 (en) | 2006-12-22 | 2009-05-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for reducing contamination during ion implantation |
KR20080062737A (ko) | 2006-12-29 | 2008-07-03 | 주식회사 하이닉스반도체 | 영역분할마스크를 이용한 이온주입방법 |
US7776727B2 (en) | 2007-08-31 | 2010-08-17 | Applied Materials, Inc. | Methods of emitter formation in solar cells |
US7820460B2 (en) | 2007-09-07 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Patterned assembly for manufacturing a solar cell and a method thereof |
US20090142875A1 (en) | 2007-11-30 | 2009-06-04 | Applied Materials, Inc. | Method of making an improved selective emitter for silicon solar cells |
US20090227095A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Counterdoping for solar cells |
US7727866B2 (en) * | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
EP2304803A1 (en) | 2008-06-11 | 2011-04-06 | Solar Implant Technologies Inc. | Solar cell fabrication using implantation |
US8202789B2 (en) | 2008-09-10 | 2012-06-19 | Varian Semiconductor Equipment Associates, Inc. | Implanting a solar cell substrate using a mask |
US9076914B2 (en) * | 2009-04-08 | 2015-07-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US8900982B2 (en) * | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US8330128B2 (en) | 2009-04-17 | 2012-12-11 | Varian Semiconductor Equipment Associates, Inc. | Implant mask with moveable hinged mask segments |
-
2010
- 2010-04-07 US US12/756,020 patent/US9006688B2/en active Active
- 2010-04-08 TW TW099110887A patent/TWI556341B/zh not_active IP Right Cessation
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2591842A (en) * | 1949-07-06 | 1952-04-08 | Bell Telephone Labor Inc | Electron discharge apparatus |
JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
JPH08318387A (ja) * | 1995-03-17 | 1996-12-03 | Ebara Corp | エネルギービームによる処理方法および処理装置 |
JP2007163640A (ja) * | 2005-12-12 | 2007-06-28 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置の製造方法及び製造装置 |
JP2012516551A (ja) * | 2008-11-20 | 2012-07-19 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 太陽電池の製造技術 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018014486A (ja) * | 2016-06-06 | 2018-01-25 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | パワー半導体素子を処理するためのエネルギフィルタ |
US10242840B2 (en) | 2016-06-06 | 2019-03-26 | Infineon Technologies Ag | Energy filter for processing a power semiconductor device |
US10403468B2 (en) | 2016-06-06 | 2019-09-03 | Infineon Technologies Ag | Energy filter for processing a power semiconductor device |
Also Published As
Publication number | Publication date |
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US9006688B2 (en) | 2015-04-14 |
CN102428541B (zh) | 2016-04-13 |
JP5773317B2 (ja) | 2015-09-02 |
TWI556341B (zh) | 2016-11-01 |
US20110089342A1 (en) | 2011-04-21 |
EP2417624A4 (en) | 2012-12-26 |
CN102428541A (zh) | 2012-04-25 |
EP2417624A2 (en) | 2012-02-15 |
KR101661235B1 (ko) | 2016-09-29 |
KR20120006529A (ko) | 2012-01-18 |
TW201101404A (en) | 2011-01-01 |
WO2010118237A2 (en) | 2010-10-14 |
WO2010118237A3 (en) | 2011-01-13 |
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