JP2012520576A - 焦電材料、放射線センサ、放射線センサの作製方法、ならびにタンタル酸リチウムおよびニオブ酸リチウムの使用 - Google Patents
焦電材料、放射線センサ、放射線センサの作製方法、ならびにタンタル酸リチウムおよびニオブ酸リチウムの使用 Download PDFInfo
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- JP2012520576A JP2012520576A JP2012500093A JP2012500093A JP2012520576A JP 2012520576 A JP2012520576 A JP 2012520576A JP 2012500093 A JP2012500093 A JP 2012500093A JP 2012500093 A JP2012500093 A JP 2012500093A JP 2012520576 A JP2012520576 A JP 2012520576A
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- pyroelectric
- lithium tantalate
- bulk resistivity
- detection element
- substrate
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- 239000000463 material Substances 0.000 title claims abstract description 66
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 230000005855 radiation Effects 0.000 title claims description 39
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000001514 detection method Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 230000004048 modification Effects 0.000 claims description 9
- 238000012986 modification Methods 0.000 claims description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- 238000006722 reduction reaction Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 230000007613 environmental effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Thermoelectric active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
以下、本発明の実施形態およびその態様について、図面を参照しながら説明する。
Claims (15)
- バルク抵抗率が2e+14Ω*cm未満、好ましくは5e+12Ω*cm未満の範囲内になる程度に処理された、タンタル酸リチウムまたはニオブ酸リチウムを含む焦電材料。
- 前記処理が、化学還元、または結晶格子における正規の位置からの酸素原子の変位であることを特徴とする請求項1に記載の材料。
- LiTaO3およびLiTaOnの混合物を含む焦電材料であって、nが1または2であり、正規の結晶格子位置での1分子当たりの酸素原子の数を表し、残余の酸素原子は、完全に、または少なくとも正規の結晶格子位置から除去されていてよく、バルク抵抗率が2e+14Ω*cm未満、好ましくは5e+12Ω*cm未満の範囲内になるような混合比であることを特徴とする焦電材料。
- バルク抵抗率が、2e+10Ω*cmを超え、好ましくは3e+11Ω*cmを超え、さらに好ましくは1e+12Ω*cmを超えることを特徴とする請求項1〜3のいずれか1項に記載の材料。
- 単結晶として形成されていることを特徴とする請求項1〜4のいずれか1項に記載の材料。
- 基板(1〜3)上の検出素子(10)を含み、検出素子が請求項1〜5のいずれか1項に記載の焦電材料を含むことを特徴とする放射線センサ(40)。
- 焦電材料が、薄膜、または基板に取り付けられた薄い自己支持板、として形成されていることを特徴とする請求項6に記載のセンサ。
- 基板が、検出素子の大部分が上方に位置する切欠き(2)を有する回路基板(1)を含むことを特徴とする請求項6または7に記載のセンサ。
- 少なくとも1つの表面に接続バンプまたはパッド(43)を有するSMT筐体(41)を含むことを特徴とする請求項6〜8のいずれか1項に記載のセンサ。
- 筐体内に信号処理部(44)を有することを特徴とする請求項6〜9のいずれか1項に記載のセンサ。
- 基板上の検出素子を含む放射線センサの作製方法であって、
基板を準備し、
修飾タンタル酸リチウム材料のタンタル酸リチウム検出素子を形成し、
検出素子を基板に設置し、
検出素子を基板上の配線に接続し、
筐体を準備し、
検出素子を筐体内に設置し、
配線を筐体の端子に接続することを特徴とする方法。 - 検出素子が、自己支持構造へと予め作製されることを特徴とする請求項11の方法。
- 修飾タンタル酸リチウムの焦電放射線検出のための使用。
- バルク抵抗率が、2e+14Ω*cm未満、好ましくは5e+12Ω*cm未満であり、好ましくは2e+10Ω*cmを超え、より好ましくは3e+11Ω*cmを超えるタンタル酸リチウムの、焦電放射線検出のための使用。
- 使用するタンタル酸リチウムが、化学還元によって、または、正規の結晶格子位置からの酸素原子の変位のための結晶格子修飾によって修飾されていることを特徴とする請求項13または14に記載の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009013336.4 | 2009-03-16 | ||
DE102009013336A DE102009013336A1 (de) | 2009-03-16 | 2009-03-16 | Pyroelektrisches Material, Strahlungssensor, Verfahren zur Herstellung eines Strahlungssensors und Verwendung von Lithiumtantalat und Lithiumniobat |
PCT/EP2010/000043 WO2010105715A1 (en) | 2009-03-16 | 2010-01-07 | Pyroelectric material - radiation sensor - method of making a radiation sensor - use of lithium tantalate and lithium niobate |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012520576A true JP2012520576A (ja) | 2012-09-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012500093A Pending JP2012520576A (ja) | 2009-03-16 | 2010-01-07 | 焦電材料、放射線センサ、放射線センサの作製方法、ならびにタンタル酸リチウムおよびニオブ酸リチウムの使用 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20120068070A1 (ja) |
EP (1) | EP2409342A1 (ja) |
JP (1) | JP2012520576A (ja) |
CN (1) | CN102369612A (ja) |
DE (1) | DE102009013336A1 (ja) |
RU (1) | RU2011141767A (ja) |
TW (1) | TW201042790A (ja) |
WO (1) | WO2010105715A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5533638B2 (ja) * | 2010-12-24 | 2014-06-25 | セイコーエプソン株式会社 | 検出装置、センサーデバイス及び電子機器 |
DE102011081641B4 (de) * | 2011-08-26 | 2014-11-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sensor und Verfahren zum Herstellen eines Sensors |
FR3045148B1 (fr) * | 2015-12-15 | 2017-12-08 | Ulis | Dispositif de detection a membranes bolometriques suspendues a fort rendement d'absorption et rapport signal sur bruit |
EP3530613A1 (de) | 2017-07-29 | 2019-08-28 | Jodlauk, Jörg | Die herstellung und verwendung von kolloidalem borosulfid |
JP7330302B2 (ja) * | 2019-08-26 | 2023-08-21 | 福建晶安光電有限公司 | タンタル酸リチウムのチップ及び黒化方法 |
Citations (4)
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JP2006145501A (ja) * | 2004-11-24 | 2006-06-08 | Hamamatsu Photonics Kk | 赤外線検出装置 |
JP2006203009A (ja) * | 2005-01-21 | 2006-08-03 | Yamajiyu Ceramics:Kk | 焦電型赤外線検出素子および焦電型赤外線検出器 |
WO2007129547A1 (ja) * | 2006-05-10 | 2007-11-15 | Murata Manufacturing Co., Ltd. | 赤外線センサおよびその製造方法 |
JP2008244171A (ja) * | 2007-03-27 | 2008-10-09 | Matsushita Electric Works Ltd | 個片基板の製造方法、個片基板、赤外線検出器 |
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GB1545076A (en) * | 1976-01-16 | 1979-05-02 | Plessey Co Ltd | Pyro-electric detectors |
CH675921A5 (ja) * | 1988-11-25 | 1990-11-15 | Cerberus Ag | |
KR0141447B1 (ko) * | 1993-09-22 | 1998-07-01 | 모리시타 요이찌 | 초전형 적외선센서 |
US6319430B1 (en) * | 1997-07-25 | 2001-11-20 | Crystal Technology, Inc. | Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same |
US6282356B1 (en) * | 1999-04-07 | 2001-08-28 | Agere Systems Optoelectronics Guardian Corp. | Optical waveguide device with enhanced stability |
TWI300448B (en) | 2003-03-06 | 2008-09-01 | Shinetsu Chemical Co | Method for manufacturing litheum tantalate crystal |
US7374612B2 (en) * | 2003-09-26 | 2008-05-20 | Shin-Etsu Chemical Co., Ltd. | Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal |
JP4301564B2 (ja) | 2004-04-27 | 2009-07-22 | 株式会社山寿セラミックス | 圧電性酸化物単結晶の帯電抑制処理方法、および帯電抑制処理装置 |
DE102006057973B4 (de) * | 2006-12-04 | 2010-08-26 | Technische Universität Dresden | Richtungsempfindlicher pyroelektrischer Infrarotsensor mit zackenförmiger Elektrodenstruktur |
DE102007024903B4 (de) * | 2007-05-29 | 2009-05-07 | Pyreos Ltd. | Vorrichtung mit Sandwichstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung |
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2009
- 2009-03-16 DE DE102009013336A patent/DE102009013336A1/de not_active Withdrawn
-
2010
- 2010-01-07 RU RU2011141767/04A patent/RU2011141767A/ru not_active Application Discontinuation
- 2010-01-07 EP EP10701450A patent/EP2409342A1/en not_active Withdrawn
- 2010-01-07 CN CN201080012483.7A patent/CN102369612A/zh active Pending
- 2010-01-07 US US13/256,897 patent/US20120068070A1/en not_active Abandoned
- 2010-01-07 WO PCT/EP2010/000043 patent/WO2010105715A1/en active Application Filing
- 2010-01-07 JP JP2012500093A patent/JP2012520576A/ja active Pending
- 2010-01-15 TW TW099101122A patent/TW201042790A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006145501A (ja) * | 2004-11-24 | 2006-06-08 | Hamamatsu Photonics Kk | 赤外線検出装置 |
JP2006203009A (ja) * | 2005-01-21 | 2006-08-03 | Yamajiyu Ceramics:Kk | 焦電型赤外線検出素子および焦電型赤外線検出器 |
WO2007129547A1 (ja) * | 2006-05-10 | 2007-11-15 | Murata Manufacturing Co., Ltd. | 赤外線センサおよびその製造方法 |
JP2008244171A (ja) * | 2007-03-27 | 2008-10-09 | Matsushita Electric Works Ltd | 個片基板の製造方法、個片基板、赤外線検出器 |
Also Published As
Publication number | Publication date |
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TW201042790A (en) | 2010-12-01 |
DE102009013336A1 (de) | 2010-09-23 |
US20120068070A1 (en) | 2012-03-22 |
WO2010105715A1 (en) | 2010-09-23 |
CN102369612A (zh) | 2012-03-07 |
EP2409342A1 (en) | 2012-01-25 |
RU2011141767A (ru) | 2013-04-27 |
WO2010105715A8 (en) | 2010-12-16 |
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