JP2012519367A - 多孔質電極を有するエネルギー蓄積デバイス - Google Patents
多孔質電極を有するエネルギー蓄積デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000007743 anodising Methods 0.000 claims abstract description 16
- 239000003792 electrolyte Substances 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 25
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229960000583 acetic acid Drugs 0.000 claims description 10
- 238000002048 anodisation reaction Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000012362 glacial acetic acid Substances 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000008151 electrolyte solution Substances 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims 2
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- 239000003990 capacitor Substances 0.000 abstract description 4
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- 239000007921 spray Substances 0.000 abstract 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
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- 229910021426 porous silicon Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
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- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 1
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- PQLVXDKIJBQVDF-UHFFFAOYSA-N acetic acid;hydrate Chemical compound O.CC(O)=O PQLVXDKIJBQVDF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
Claims (15)
- 大表面積の電極を有するエネルギー蓄積デバイスを製作する方法であって、
導電基板を用意することと、
第1の電極である半導体層を前記導電基板上に堆積させることと、
前記半導体層を陽極酸化処理し、前記半導体層内に孔を形成して前記第1の電極の表面積を増大させることと、
前記陽極酸化処理後に電解液および第2の電極を提供して前記エネルギー蓄積デバイスを形成することと
を含む方法。 - 前記陽極酸化処理が、フッ化水素酸および酢酸からなるプロセス電解液を使用して実施される、請求項1に記載の方法。
- 前記半導体層が、シリコン、ゲルマニウム、シリコン−ゲルマニウム、およびヒ化ガリウムからなる群から選択される、請求項1に記載の方法。
- 前記半導体が非晶質である、請求項1に記載の方法。
- 前記半導体がシリコンである、請求項1に記載の方法。
- 前記陽極酸化処理が、49%のフッ化水素酸と氷酢酸の混合物を含むプロセス電解液を使用して実施され、前記プロセス電解液が、30体積%を上回る氷酢酸を含む、請求項5に記載の方法。
- 前記エネルギー蓄積デバイス上に絶縁層を設けることと、
前記エネルギー蓄積デバイスを円筒形の形状に巻回することと
をさらに含み、前記絶縁層が前記巻回体内で前記基板と前記電極を電気的に分離する、請求項1に記載の方法。 - エネルギー蓄積デバイスの大表面積の電極を形成する装置であって、
第1の電極である半導体層を導電基板上に堆積させるように構成された第1のシステムと、
前記半導体層を陽極酸化処理し、前記半導体層内に孔を形成して前記第1の電極の表面積を増大させるように構成された第2のシステムと
を備える装置。 - 前記導電基板が連続する薄膜である、請求項8に記載の装置。
- 前記導電基板が前記第1のシステムによって直線的に動かされる、請求項9に記載の装置。
- 前記導電基板が前記第2のシステムによって直線的に動かされる、請求項9に記載の装置。
- 前記導電基板が2つのリール間で可動である、請求項9に記載の装置。
- 前記第1のシステムが溶射堆積器具である、請求項8に記載の装置。
- 前記第1のシステムが、物理気相成長器具、化学気相成長器具、およびプラズマ強化化学気相成長器具からなる群から選択される、請求項8に記載の装置。
- 薄膜の金属アノード集電板と、
上部表面および下部表面を有する大表面積の薄膜の半導体アノードと
を備え、前記下部表面が前記アノード集電板に取り付けられ、前記薄膜が、前記上部表面から前記薄膜内に延びる孔を有しており、
前記孔間の半導体材料が導電性で、前記半導体アノードを通って前記アノード集電板に電気的に接続されている、
エネルギー蓄積デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/396,277 US20100221606A1 (en) | 2009-03-02 | 2009-03-02 | Energy storage device with porous electrode |
US12/396,277 | 2009-03-02 | ||
PCT/US2010/025753 WO2010101819A2 (en) | 2009-03-02 | 2010-03-01 | Energy storage device with porous electrode |
Publications (2)
Publication Number | Publication Date |
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JP2012519367A true JP2012519367A (ja) | 2012-08-23 |
JP5619784B2 JP5619784B2 (ja) | 2014-11-05 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011553005A Expired - Fee Related JP5619784B2 (ja) | 2009-03-02 | 2010-03-01 | 多孔質電極を有するエネルギー蓄積デバイス |
Country Status (6)
Country | Link |
---|---|
US (2) | US20100221606A1 (ja) |
JP (1) | JP5619784B2 (ja) |
KR (1) | KR101675014B1 (ja) |
CN (1) | CN102334224A (ja) |
DE (1) | DE112010000945T5 (ja) |
WO (1) | WO2010101819A2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2928036B1 (fr) * | 2008-02-26 | 2010-12-24 | Commissariat Energie Atomique | Procede de fabrication d'une electrode a base de silicium, electrode a base de silicium et batterie au lithium comprenant une telle electrode |
DE102010013492A1 (de) * | 2010-03-31 | 2011-10-06 | Arne-Christian Voigt | Nanostrukturkondensator |
KR101578649B1 (ko) | 2011-09-30 | 2015-12-18 | 인텔 코포레이션 | 에너지 저장 장치의 에너지 밀도 및 달성가능한 전력 출력을 증가시키는 방법 |
WO2013089710A1 (en) * | 2011-12-14 | 2013-06-20 | Intel Corporation | Overcoming variance in stacked capacitors |
EP2820661B1 (en) | 2012-02-28 | 2023-08-30 | Teknologian tutkimuskeskus VTT Oy | Integrable electrochemical capacitor |
US9093226B2 (en) * | 2012-09-17 | 2015-07-28 | Intel Corporation | Energy storage device, method of manufacturing same, and mobile electronic device containing same |
DE102012221932A1 (de) * | 2012-11-30 | 2014-06-05 | Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. | Aufgerollte, dreidimensionale Feldeffekttransistoren und ihre Verwendung in der Elektronik, Sensorik und Mikrofluidik |
DE102013114767A1 (de) | 2013-12-23 | 2015-06-25 | Universität Stuttgart | Batterie und Verfahren zum Herstellen einer solchen |
EP3207553B1 (en) | 2014-10-17 | 2019-12-04 | Teknologian Tutkimuskeskus VTT OY | A blank suitable for use as a body of supercapacitor and a supercapacitor |
KR102434695B1 (ko) * | 2015-02-24 | 2022-08-22 | 삼성전자주식회사 | 신축성을 갖는 수퍼 커패시터 및 그 제조방법 |
CN107851510B (zh) * | 2015-08-12 | 2019-06-14 | 株式会社村田制作所 | 电容器 |
DE102015120879A1 (de) * | 2015-12-02 | 2017-06-08 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Silizium-basierten porösen Elektrode für eine Batterie, insbesondere Lithium-Ionen-Batterie |
US11171324B2 (en) | 2016-03-15 | 2021-11-09 | Honda Motor Co., Ltd. | System and method of producing a composite product |
US11383213B2 (en) | 2016-03-15 | 2022-07-12 | Honda Motor Co., Ltd. | System and method of producing a composite product |
DE102016105219A1 (de) * | 2016-03-21 | 2017-09-21 | Infineon Technologies Dresden Gmbh | Halbleiterbatterie und Halbleitervorrichtung, die eine Halbleiterbatterie enthält |
US11081684B2 (en) | 2017-05-24 | 2021-08-03 | Honda Motor Co., Ltd. | Production of carbon nanotube modified battery electrode powders via single step dispersion |
US20190036102A1 (en) | 2017-07-31 | 2019-01-31 | Honda Motor Co., Ltd. | Continuous production of binder and collector-less self-standing electrodes for li-ion batteries by using carbon nanotubes as an additive |
US10658651B2 (en) | 2017-07-31 | 2020-05-19 | Honda Motor Co., Ltd. | Self standing electrodes and methods for making thereof |
US11121358B2 (en) | 2017-09-15 | 2021-09-14 | Honda Motor Co., Ltd. | Method for embedding a battery tab attachment in a self-standing electrode without current collector or binder |
US11201318B2 (en) | 2017-09-15 | 2021-12-14 | Honda Motor Co., Ltd. | Method for battery tab attachment to a self-standing electrode |
KR102310353B1 (ko) | 2017-12-29 | 2021-10-08 | 한국전기연구원 | 에너지저장 디바이스용 다공성 전극 제조장치 |
IT201800006103A1 (it) * | 2018-06-07 | 2019-12-07 | Processo per realizzare un anodo per batterie agli ioni di litio. | |
US11535517B2 (en) | 2019-01-24 | 2022-12-27 | Honda Motor Co., Ltd. | Method of making self-standing electrodes supported by carbon nanostructured filaments |
US11325833B2 (en) | 2019-03-04 | 2022-05-10 | Honda Motor Co., Ltd. | Composite yarn and method of making a carbon nanotube composite yarn |
US11352258B2 (en) | 2019-03-04 | 2022-06-07 | Honda Motor Co., Ltd. | Multifunctional conductive wire and method of making |
IL266910B (en) * | 2019-05-27 | 2020-11-30 | Addionics Il Ltd | 3D structures are produced electrochemically for electrodes in batteries |
US11539042B2 (en) | 2019-07-19 | 2022-12-27 | Honda Motor Co., Ltd. | Flexible packaging with embedded electrode and method of making |
CN112490411B (zh) * | 2020-11-25 | 2022-04-12 | 哈尔滨工业大学 | 一种原位成膜保护锂金属负极的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52114932A (en) * | 1976-03-23 | 1977-09-27 | Sanyo Electric Co | Method of manufacturing negative electrode plate for alkaline storage battery |
JP2004327330A (ja) * | 2003-04-25 | 2004-11-18 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
JP2005210097A (ja) * | 2003-12-22 | 2005-08-04 | Interuniv Micro Electronica Centrum Vzw | シリコン基板上にiii族窒化物材料を成長させるための方法及びそのための装置 |
JP2006338996A (ja) * | 2005-06-01 | 2006-12-14 | Sony Corp | 二次電池用負極、二次電池および二次電池用負極の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0563625A3 (en) * | 1992-04-03 | 1994-05-25 | Ibm | Immersion scanning system for fabricating porous silicon films and devices |
FR2779006B1 (fr) * | 1998-05-19 | 2003-01-24 | St Microelectronics Sa | Procede de formation de silicium poreux dans un substrat de silicium, en particulier pour l'amelioration des performances d'un circuit inductif |
US6602767B2 (en) * | 2000-01-27 | 2003-08-05 | Canon Kabushiki Kaisha | Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery |
US6540900B1 (en) * | 2001-10-16 | 2003-04-01 | Kemet Electronics Corporation | Method of anodizing aluminum capacitor foil for use in low voltage, surface mount capacitors |
JP4574146B2 (ja) * | 2003-09-12 | 2010-11-04 | ローム株式会社 | 燃料電池およびその製造方法 |
EP1583139A1 (en) * | 2004-04-02 | 2005-10-05 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Method for depositing a group III-nitride material on a silicon substrate and device therefor |
JP2005340167A (ja) * | 2004-04-27 | 2005-12-08 | Enplas Corp | 色素増感太陽電池の光電極基板の製造方法、色素増感太陽電池の光電極基板、及び色素増感太陽電池 |
KR100614390B1 (ko) * | 2004-09-06 | 2006-08-21 | 삼성에스디아이 주식회사 | 권취형 전극 조립체와 이를 구비하는 리튬 이온 이차 전지및 이의 제조 방법 |
JP2007128766A (ja) * | 2005-11-04 | 2007-05-24 | Sony Corp | 負極活物質および電池 |
US9054372B2 (en) * | 2008-08-01 | 2015-06-09 | Seeo, Inc. | High capacity anodes |
US9878905B2 (en) * | 2009-12-31 | 2018-01-30 | Samsung Electronics Co., Ltd. | Negative electrode including metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode |
-
2009
- 2009-03-02 US US12/396,277 patent/US20100221606A1/en not_active Abandoned
-
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- 2010-03-01 WO PCT/US2010/025753 patent/WO2010101819A2/en active Application Filing
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-
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- 2014-02-26 US US14/190,957 patent/US20140178728A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52114932A (en) * | 1976-03-23 | 1977-09-27 | Sanyo Electric Co | Method of manufacturing negative electrode plate for alkaline storage battery |
JP2004327330A (ja) * | 2003-04-25 | 2004-11-18 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
JP2005210097A (ja) * | 2003-12-22 | 2005-08-04 | Interuniv Micro Electronica Centrum Vzw | シリコン基板上にiii族窒化物材料を成長させるための方法及びそのための装置 |
JP2006338996A (ja) * | 2005-06-01 | 2006-12-14 | Sony Corp | 二次電池用負極、二次電池および二次電池用負極の製造方法 |
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KR101675014B1 (ko) | 2016-11-10 |
US20140178728A1 (en) | 2014-06-26 |
JP5619784B2 (ja) | 2014-11-05 |
WO2010101819A2 (en) | 2010-09-10 |
CN102334224A (zh) | 2012-01-25 |
US20100221606A1 (en) | 2010-09-02 |
KR20110134895A (ko) | 2011-12-15 |
DE112010000945T5 (de) | 2012-09-27 |
WO2010101819A3 (en) | 2011-01-13 |
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