JP2012516038A - シリコンベースの光電気回路 - Google Patents
シリコンベースの光電気回路 Download PDFInfo
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- JP2012516038A JP2012516038A JP2011546437A JP2011546437A JP2012516038A JP 2012516038 A JP2012516038 A JP 2012516038A JP 2011546437 A JP2011546437 A JP 2011546437A JP 2011546437 A JP2011546437 A JP 2011546437A JP 2012516038 A JP2012516038 A JP 2012516038A
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- 229910052710 silicon Inorganic materials 0.000 title claims description 14
- 239000010703 silicon Substances 0.000 title claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 11
- 230000005693 optoelectronics Effects 0.000 title description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 148
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000010949 copper Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 238000001465 metallisation Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【選択図】図1
Description
Claims (15)
- 基板と、
前記基板の上面を覆うシード層と、
前記シード層の上面を覆って配置される半導体層と、
前記半導体層中のトランジスタデバイスと、
前記シード層の底面上に配置される光電気構造体と、を備える、半導体構造体。 - 請求項1に記載の半導体構造体において、
前記基板はその中に開口部を備え、当該開口部は当該基板の底面から延在し、前記シード層の底面上で終端する、半導体構造体。 - 請求項1に記載の半導体構造体において、
前記光電気構造体は、III−V族構造体を含む、半導体構造体。 - 請求項1に記載の半導体構造体において、
前記基板は第IV族材料である、半導体構造体。 - 請求項2に記載の半導体構造体において、
前記光電気構造体は、III−V族構造体を含む、半導体構造体。 - 請求項1に記載の半導体構造体において、
前記光電気構造体は、光子検出構造体または光子放出構造体を含む、半導体構造体。 - 請求項6に記載の半導体構造体において、
前記基板はシリコンである、半導体構造体。 - 請求項1に記載の半導体構造体において、
トランジスタは、前記半導体層の第1の領域の上面部分に配置され、
前記半導体層は、前記半導体層の、横方向に空間がある第2の領域に開口部を備え、当該半導体層中の当該開口部は、当該半導体層の前記上面部分から延在し、前記光電気構造体を覆う前記シード層上で終端する、半導体構造体。 - 請求項8に記載の半導体構造体において、
光は、前記半導体層中の前記開口部を通過する、半導体構造体。 - 請求項9に記載の半導体構造体において、
前記光電気構造体は、III−V族構造体を含む、半導体構造体。 - 請求項10に記載の半導体構造体において、
前記基板はシリコンである、半導体構造体。 - 請求項11に記載の半導体構造体において、
前記半導体層の前記上面部分を覆って配置される前記トランジスタへの電気コンタクト、および前記半導体層の前記上面部分を覆って配置される、前記電気光学構造体への光電気電気コンタクトを含む、半導体構造体。 - 請求項12に記載の半導体構造体において、
前記シード層はゲルマニウムである、半導体構造体。 - 材料の層と、
前記材料の層を覆って配置され、その中にトランジスタが形成される半導体層と、
前記材料の層の下に配置される電気光学デバイスと、を備える半導体構造体であって、
前記トランジスタは、構造体の上面に面し、前記電気光学デバイスは当該構造体の背面に面する、半導体構造体。 - 請求項14に記載の半導体構造体において、
前記トランジスタは、前記構造体の前面に面する活性領域を備え、
前記電気光学デバイスは、前記構造体の背面に面する活性領域を備える、半導体構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/356,252 US8853745B2 (en) | 2009-01-20 | 2009-01-20 | Silicon based opto-electric circuits |
US12/356,252 | 2009-01-20 | ||
PCT/US2010/021444 WO2010085459A1 (en) | 2009-01-20 | 2010-01-20 | Silicon based opto-electric circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012516038A true JP2012516038A (ja) | 2012-07-12 |
JP5523477B2 JP5523477B2 (ja) | 2014-06-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011546437A Active JP5523477B2 (ja) | 2009-01-20 | 2010-01-20 | シリコンベースの光電気回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8853745B2 (ja) |
EP (1) | EP2380251B1 (ja) |
JP (1) | JP5523477B2 (ja) |
TW (1) | TWI472025B (ja) |
WO (1) | WO2010085459A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018505544A (ja) * | 2014-11-24 | 2018-02-22 | アーティラックス インコーポレイテッドArtilux Inc. | 同じ基板上でトランジスタと共に光検出器を製作するためのモノリシック集積技法 |
Families Citing this family (8)
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US10096971B2 (en) * | 2014-06-26 | 2018-10-09 | Alcatel-Lucent Usa Inc. | Hybrid semiconductor lasers |
US9991417B2 (en) | 2015-07-31 | 2018-06-05 | International Business Machines Corporation | Resonant cavity strained III-V photodetector and LED on silicon substrate |
US10014373B2 (en) | 2015-10-08 | 2018-07-03 | International Business Machines Corporation | Fabrication of semiconductor junctions |
US10153300B2 (en) * | 2016-02-05 | 2018-12-11 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device including a high-electron-mobility transistor (HEMT) and method for manufacturing the same |
US11581448B2 (en) | 2021-04-01 | 2023-02-14 | Raytheon Company | Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors |
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US20230057702A1 (en) * | 2021-08-19 | 2023-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
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US20100181601A1 (en) | 2010-07-22 |
US8853745B2 (en) | 2014-10-07 |
EP2380251A1 (en) | 2011-10-26 |
JP5523477B2 (ja) | 2014-06-18 |
EP2380251B1 (en) | 2020-08-12 |
TWI472025B (zh) | 2015-02-01 |
WO2010085459A1 (en) | 2010-07-29 |
TW201114025A (en) | 2011-04-16 |
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