JP2012515925A - 高速検査のための局在駆動および信号処理回路を備えたｔｄｉセンサーモジュール - Google Patents

高速検査のための局在駆動および信号処理回路を備えたｔｄｉセンサーモジュール Download PDF

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JP2012515925A
JP2012515925A JP2011548106A JP2011548106A JP2012515925A JP 2012515925 A JP2012515925 A JP 2012515925A JP 2011548106 A JP2011548106 A JP 2011548106A JP 2011548106 A JP2011548106 A JP 2011548106A JP 2012515925 A JP2012515925 A JP 2012515925A
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tdi sensor
inspection system
tdi
modular array
array
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JP2012515925A5 (enExample
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ブラウン・デビッド・エル．
チュアン・ユン−ホ
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H04N25/7013—Line sensors using abutted sensors forming a long line
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
JP2011548106A 2009-01-23 2010-01-21 高速検査のための局在駆動および信号処理回路を備えたｔｄｉセンサーモジュール Pending JP2012515925A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14665209P 2009-01-23 2009-01-23
US61/146,652 2009-01-23
US12/575,376 2009-10-07
US12/575,376 US8624971B2 (en) 2009-01-23 2009-10-07 TDI sensor modules with localized driving and signal processing circuitry for high speed inspection
PCT/US2010/021682 WO2010085578A2 (en) 2009-01-23 2010-01-21 Tdi sensor modules with localized driving and signal processing circuitry for high speed inspection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014207026A Division JP6130340B2 (ja) 2009-01-23 2014-10-08 検査システム、モジュラーアレイ、および、方法

Publications (2)

Publication Number Publication Date
JP2012515925A true JP2012515925A (ja) 2012-07-12
JP2012515925A5 JP2012515925A5 (enExample) 2013-03-07

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Application Number Title Priority Date Filing Date
JP2011548106A Pending JP2012515925A (ja) 2009-01-23 2010-01-21 高速検査のための局在駆動および信号処理回路を備えたｔｄｉセンサーモジュール
JP2014207026A Active JP6130340B2 (ja) 2009-01-23 2014-10-08 検査システム、モジュラーアレイ、および、方法
JP2017079412A Pending JP2017142260A (ja) 2009-01-23 2017-04-13 検査システムおよび方法
JP2019162730A Active JP6823131B2 (ja) 2009-01-23 2019-09-06 検査システム
JP2021001267A Active JP7062102B2 (ja) 2009-01-23 2021-01-07 検査システムおよび方法

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Application Number Title Priority Date Filing Date
JP2014207026A Active JP6130340B2 (ja) 2009-01-23 2014-10-08 検査システム、モジュラーアレイ、および、方法
JP2017079412A Pending JP2017142260A (ja) 2009-01-23 2017-04-13 検査システムおよび方法
JP2019162730A Active JP6823131B2 (ja) 2009-01-23 2019-09-06 検査システム
JP2021001267A Active JP7062102B2 (ja) 2009-01-23 2021-01-07 検査システムおよび方法

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US (2) US8624971B2 (enExample)
JP (5) JP2012515925A (enExample)
WO (1) WO2010085578A2 (enExample)

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JP2016082251A (ja) * 2014-10-09 2016-05-16 三菱電機株式会社 Ｃｃｄイメージセンサ及びその画素群の配置方法
JP2016533063A (ja) * 2013-06-26 2016-10-20 ケーエルエー−テンカー コーポレイション 可変電圧読出クロック信号を有するｔｄｉ撮像システム
JP2019529925A (ja) * 2016-09-30 2019-10-17 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド フラットパネルの粒度検出方法
JP2022541146A (ja) * 2019-07-12 2022-09-22 ニューラリンク コーポレーション プリント回路基板（ｐｃｂ）が両面において薄膜電極アレイと複数の集積回路（ｉｃ）とで挟まれて配置される部品、および製造方法

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US8873596B2 (en) 2011-07-22 2014-10-28 Kla-Tencor Corporation Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal
US8947521B1 (en) * 2011-08-08 2015-02-03 Kla-Tencor Corporation Method for reducing aliasing in TDI based imaging
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US9426400B2 (en) 2012-12-10 2016-08-23 Kla-Tencor Corporation Method and apparatus for high speed acquisition of moving images using pulsed illumination
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US9478402B2 (en) 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
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US9804101B2 (en) 2014-03-20 2017-10-31 Kla-Tencor Corporation System and method for reducing the bandwidth of a laser and an inspection system and method using a laser
KR102330732B1 (ko) * 2014-04-02 2021-11-23 케이엘에이 코포레이션 마스크들을 위한 고밀도 레지스트레이션 맵들을 생성하기 위한 방법, 시스템 및 컴퓨터 프로그램 제품
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US9748729B2 (en) 2014-10-03 2017-08-29 Kla-Tencor Corporation 183NM laser and inspection system
US9891177B2 (en) 2014-10-03 2018-02-13 Kla-Tencor Corporation TDI sensor in a darkfield system
US9860466B2 (en) 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
US10748730B2 (en) 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
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US10313622B2 (en) * 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
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US10141156B2 (en) * 2016-09-27 2018-11-27 Kla-Tencor Corporation Measurement of overlay and edge placement errors with an electron beam column array
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JP2016082251A (ja) * 2014-10-09 2016-05-16 三菱電機株式会社 Ｃｃｄイメージセンサ及びその画素群の配置方法
JP2019529925A (ja) * 2016-09-30 2019-10-17 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド フラットパネルの粒度検出方法
JP7045369B2 (ja) 2016-09-30 2022-03-31 シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド フラットパネルの粒度検出方法
JP2022541146A (ja) * 2019-07-12 2022-09-22 ニューラリンク コーポレーション プリント回路基板（ｐｃｂ）が両面において薄膜電極アレイと複数の集積回路（ｉｃ）とで挟まれて配置される部品、および製造方法

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