JP2012515560A - 均質基板を含む大面積均質アレイの製作方法 - Google Patents

均質基板を含む大面積均質アレイの製作方法 Download PDF

Info

Publication number
JP2012515560A
JP2012515560A JP2011548194A JP2011548194A JP2012515560A JP 2012515560 A JP2012515560 A JP 2012515560A JP 2011548194 A JP2011548194 A JP 2011548194A JP 2011548194 A JP2011548194 A JP 2011548194A JP 2012515560 A JP2012515560 A JP 2012515560A
Authority
JP
Japan
Prior art keywords
tip member
array
article
substrate
cantilever
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011548194A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012515560A5 (enExample
Inventor
ナビル エー． アムロ
レイモンド サネドリン
アール ジェイ． グビンズ
Original Assignee
ナノインク インコーポレーティッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ナノインク インコーポレーティッド filed Critical ナノインク インコーポレーティッド
Publication of JP2012515560A publication Critical patent/JP2012515560A/ja
Publication of JP2012515560A5 publication Critical patent/JP2012515560A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Micromachines (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2011548194A 2009-01-26 2010-01-25 均質基板を含む大面積均質アレイの製作方法 Pending JP2012515560A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14745209P 2009-01-26 2009-01-26
US61/147,452 2009-01-26
PCT/US2010/022015 WO2010085769A1 (en) 2009-01-26 2010-01-25 Large area, homogeneous array fabrication including homogeneous substrates

Publications (2)

Publication Number Publication Date
JP2012515560A true JP2012515560A (ja) 2012-07-12
JP2012515560A5 JP2012515560A5 (enExample) 2013-03-14

Family

ID=42096549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011548194A Pending JP2012515560A (ja) 2009-01-26 2010-01-25 均質基板を含む大面積均質アレイの製作方法

Country Status (8)

Country Link
US (1) US20100221505A1 (enExample)
EP (1) EP2389614A1 (enExample)
JP (1) JP2012515560A (enExample)
KR (1) KR20110124214A (enExample)
AU (1) AU2010206594A1 (enExample)
CA (1) CA2750430A1 (enExample)
SG (1) SG172852A1 (enExample)
WO (1) WO2010085769A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2750425A1 (en) * 2009-01-26 2010-07-29 Nanoink, Inc. Large area, homogeneous array fabrication including controlled tip loading vapor deposition
US8214916B2 (en) * 2009-01-26 2012-07-03 Nanoink, Inc. Large area, homogeneous array fabrication including leveling with use of bright spots
US9276190B2 (en) 2013-10-01 2016-03-01 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD
US9040339B2 (en) 2013-10-01 2015-05-26 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material
EP4003683A4 (en) 2019-07-23 2024-08-07 University Of Massachusetts THERMAL PRINTING OF NANOSTRUCTURED MATERIALS

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007126689A1 (en) * 2006-04-19 2007-11-08 Northwestern University Article for parallel lithography with two-dimensional pen arrays
WO2008091279A2 (en) * 2006-06-28 2008-07-31 Northwestern University Etching and hole arrays
WO2008112713A1 (en) * 2007-03-13 2008-09-18 Nanoink, Inc. Nanolithography with use of viewports

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE23838E (en) 1950-09-14 1954-06-08 Post-deflected color kinescope
US5171992A (en) 1990-10-31 1992-12-15 International Business Machines Corporation Nanometer scale probe for an atomic force microscope, and method for making same
US6635311B1 (en) * 1999-01-07 2003-10-21 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or products thereby
US6827979B2 (en) 1999-01-07 2004-12-07 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or produced thereby
US7291284B2 (en) 2000-05-26 2007-11-06 Northwestern University Fabrication of sub-50 nm solid-state nanostructures based on nanolithography
US6642129B2 (en) 2001-07-26 2003-11-04 The Board Of Trustees Of The University Of Illinois Parallel, individually addressable probes for nanolithography
SE0102764D0 (sv) 2001-08-17 2001-08-17 Astrazeneca Ab Compounds
US7279046B2 (en) 2002-03-27 2007-10-09 Nanoink, Inc. Method and apparatus for aligning patterns on a substrate
US7060977B1 (en) 2002-05-14 2006-06-13 Nanoink, Inc. Nanolithographic calibration methods
EP1363164B1 (en) 2002-05-16 2015-04-29 NaWoTec GmbH Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface
AU2003287618A1 (en) * 2002-11-12 2004-06-03 Nanoink, Inc. Methods and apparatus for ink delivery to nanolithographic probe systems
US20040228962A1 (en) * 2003-05-16 2004-11-18 Chang Liu Scanning probe microscopy probe and method for scanning probe contact printing
US7690325B2 (en) 2004-04-30 2010-04-06 Bioforce Nanosciences, Inc. Method and apparatus for depositing material onto a surface
US8294090B1 (en) * 2004-10-29 2012-10-23 Japan Science And Technology Agency Substrate for MALDI-TOF MS and mass spectrometry method using the same
EP1846249A2 (en) * 2005-01-10 2007-10-24 Bioforce Nanosciences, Inc. Topographically indexed support substrates
US8256017B2 (en) * 2006-08-31 2012-08-28 Nanoink, Inc. Using optical deflection of cantilevers for alignment
AU2007350336A1 (en) * 2006-12-18 2008-10-09 Northwestern University Fabrication of microstructures and nanostructures using etching resist
JP5269887B2 (ja) * 2007-05-09 2013-08-21 ナノインク インコーポレーティッド 小型ナノファブリケーション装置
KR20100056453A (ko) * 2007-08-08 2010-05-27 노쓰웨스턴유니버시티 캔틸레버 어레이에 대해 독립적으로 어드레스 가능한 자가 보정 잉킹 방법
AU2009210719A1 (en) * 2008-02-05 2009-08-13 Nanoink, Inc. Array and cantilever array leveling
WO2009132321A1 (en) 2008-04-25 2009-10-29 Northwestern University Polymer pen lithography
GB0812789D0 (en) * 2008-07-12 2008-08-20 Univ Liverpool Materials and methods for cell growth
KR20110119666A (ko) * 2009-01-26 2011-11-02 나노잉크, 인크. 기판 온도 조절을 포함하는 넓은 면적의 균일한 어레이 제작
US8214916B2 (en) * 2009-01-26 2012-07-03 Nanoink, Inc. Large area, homogeneous array fabrication including leveling with use of bright spots
CA2750425A1 (en) * 2009-01-26 2010-07-29 Nanoink, Inc. Large area, homogeneous array fabrication including controlled tip loading vapor deposition
US9918209B2 (en) 2013-10-28 2018-03-13 Microsoft Technology Licensing, Llc Policies for selecting sources for resource strings

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007126689A1 (en) * 2006-04-19 2007-11-08 Northwestern University Article for parallel lithography with two-dimensional pen arrays
WO2008091279A2 (en) * 2006-06-28 2008-07-31 Northwestern University Etching and hole arrays
WO2008112713A1 (en) * 2007-03-13 2008-09-18 Nanoink, Inc. Nanolithography with use of viewports

Also Published As

Publication number Publication date
WO2010085769A1 (en) 2010-07-29
SG172852A1 (en) 2011-08-29
AU2010206594A1 (en) 2011-07-28
KR20110124214A (ko) 2011-11-16
US20100221505A1 (en) 2010-09-02
EP2389614A1 (en) 2011-11-30
CA2750430A1 (en) 2010-07-29

Similar Documents

Publication Publication Date Title
JP2012515559A (ja) 制御された先端部材負荷用蒸着を含む大面積均質アレイの製作方法
EP2013662B1 (en) Article for parallel lithography with two-dimensional pen arrays
JP2010521325A (ja) ビューポートを用いたナノリソグラフィ
JP2012516064A (ja) 基板温度制御を含む大面積均質アレイの製作方法
US8256018B2 (en) Array and cantilever array leveling
US8214916B2 (en) Large area, homogeneous array fabrication including leveling with use of bright spots
JP2012515560A (ja) 均質基板を含む大面積均質アレイの製作方法
US20110014378A1 (en) Leveling devices and methods
CN102503155B (zh) 一种基于摩擦诱导选择性刻蚀的玻璃表面纳米加工方法
Haaheim et al. Self‐leveling two‐dimensional probe arrays for Dip Pen Nanolithography®
WO2012026927A1 (en) Leveling devices and methods

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130124

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140203

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140625