JP2012514848A - 光の取り出しが改善された反転led構造体 - Google Patents
光の取り出しが改善された反転led構造体 Download PDFInfo
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- JP2012514848A JP2012514848A JP2011526899A JP2011526899A JP2012514848A JP 2012514848 A JP2012514848 A JP 2012514848A JP 2011526899 A JP2011526899 A JP 2011526899A JP 2011526899 A JP2011526899 A JP 2011526899A JP 2012514848 A JP2012514848 A JP 2012514848A
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- 238000000605 extraction Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 239000000039 congener Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 238000007788 roughening Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】光源[30]および同を製作する方法が開示される。光源[30]は基板および発光構造体を含む。基板[24]は第一の表面および第二の表面を有し、第二の表面は基板の第一の表面を基準として湾曲した凸面状表面[39]を含む。発光構造体は、第一の表面の上に置かれた第一の導電性型の材料の第一の層[21]、第一の層の上に置かれた活性層であってその中で正孔と電子とが再結合すると発光する活性層[22]、ならびに活性層の上に置かれた第二の導電性型の材料および第一の表面とは反対側の第二の表面を含む第二の層[23]、を含む。鏡面層[25]が発光構造体の上に置かれる。
【選択図】図2
Description
Claims (9)
- 第一の表面および第二の表面を有する基板であって、当該第二の表面が当該基板の当該第一の表面を基準として湾曲した凸面状表面を含む基板;
当該第一の表面の上に置かれた第一の層であって、当該第一の層が第一の導電性型の材料を含む第一の層;
当該第一の層の上に置かれた活性層であって、当該活性層中で正孔と電子とが再結合すると、当該活性層が発光する活性層;および
第二の導電性型の材料を含む第二の層であって、当該第二の層が当該活性層の上に置かれた第一の表面および当該第一の表面とは反対側の第二の表面を有する第二の層
を含み、当該基板が当該活性層によって生成された光に透明である、デバイス。 - 当該第一の層、当該第二の層および当該活性層が、GaN同族体の材料からの材料を含んでいる、請求項1に記載のデバイス。
- 当該基板がサファイアを含んでいる、請求項1に記載のデバイス。
- 当該湾曲した凸面状表面が、当該活性層中で生成された光線が最初は内部反射によって当該表面から反射され、該後に、当該表面上の突き当たり点における当該表面の臨界角よりも小さい角度で当該表面に突き当たるように選択されたものである、請求項1に記載のデバイス。
- 当該湾曲した凸面状表面が非球面状である、請求項1に記載のデバイス。
- 当該湾曲した凸面状表面が実質的に放物線曲面である、請求項1に記載のデバイス。
- 実質的に互いに平行である第一の表面および第二の表面を有する基板を用意する工程;
発光構造体を当該第一の表面の上に製作する工程であって、当該発光構造体が
当該基板の上に堆積された第一の導電性型の半導体材料の第一の層、
当該第一の層の上に置かれた活性層、および
当該活性層の上に置かれた、当該第一の導電性型とは逆の導電性型の半導体材料の第二の層、
を含む工程;および
当該基板の当該第二の表面をエッチングして、当該第一の表面を基準として湾曲した凸面状表面を付与する工程
を含む発光デバイスを製作する方法。 - 当該基板の当該第二の表面をエッチングする工程が、
当該第二の表面の上にフォトレジストの層を堆積する工程;
当該堆積されたフォトレジスト層をパターニングする工程;
当該フォトレジストを、当該フォトレジスト層の表面が湾曲した凸面形状をとる温度まで加熱する工程;および
当該フォトレジスト層および当該基板をエッチングする工程
を含む、請求項7に記載の方法。 - 当該湾曲した凸面状表面が、当該活性層中で生成された光線が最初は内部反射によって当該湾曲した凸面状表面から反射され、該後に、当該湾曲した凸面状表面上の突き当たり点における当該表面の臨界角よりも小さい角度で当該表面に突き当たるように選択される、請求項7に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/210,845 US7741134B2 (en) | 2008-09-15 | 2008-09-15 | Inverted LED structure with improved light extraction |
US12/210,845 | 2008-09-15 | ||
PCT/US2009/054537 WO2010030488A2 (en) | 2008-09-15 | 2009-08-20 | Inverted led structure with improved light extraction |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012514848A true JP2012514848A (ja) | 2012-06-28 |
JP5743890B2 JP5743890B2 (ja) | 2015-07-01 |
Family
ID=42005698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011526899A Expired - Fee Related JP5743890B2 (ja) | 2008-09-15 | 2009-08-20 | 発光デバイスを製作する方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7741134B2 (ja) |
JP (1) | JP5743890B2 (ja) |
KR (1) | KR20110059616A (ja) |
CN (1) | CN102138231B (ja) |
TW (1) | TWI469385B (ja) |
WO (1) | WO2010030488A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8653546B2 (en) * | 2009-10-06 | 2014-02-18 | Epistar Corporation | Light-emitting device having a ramp |
CN102270717B (zh) * | 2011-07-15 | 2013-03-06 | 华灿光电股份有限公司 | 一种弯曲衬底侧面的发光二极管芯片及其制备方法 |
US20130278064A1 (en) * | 2011-10-19 | 2013-10-24 | Creative Electron, Inc. | Ultra-Low Noise, High Voltage, Adjustable DC-DC Converter Using Photoelectric Effect |
US20150355084A1 (en) * | 2012-12-19 | 2015-12-10 | University Of California | Optimizing analysis and identification of particulate matter |
JP2016171277A (ja) * | 2015-03-16 | 2016-09-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
CN110931615B (zh) * | 2019-12-19 | 2021-10-22 | 马鞍山杰生半导体有限公司 | 一种深紫外led外延结构及其制备方法 |
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JPH04232902A (ja) * | 1990-05-25 | 1992-08-21 | American Teleph & Telegr Co <Att> | 部分的又は完全にくぼんだ微細レンズの製作 |
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JP2003347586A (ja) * | 2003-07-08 | 2003-12-05 | Toshiba Corp | 半導体発光素子 |
WO2007146860A1 (en) * | 2006-06-12 | 2007-12-21 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
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2008
- 2008-09-15 US US12/210,845 patent/US7741134B2/en not_active Expired - Fee Related
-
2009
- 2009-08-20 CN CN200980133959XA patent/CN102138231B/zh not_active Expired - Fee Related
- 2009-08-20 JP JP2011526899A patent/JP5743890B2/ja not_active Expired - Fee Related
- 2009-08-20 KR KR1020117005989A patent/KR20110059616A/ko active IP Right Grant
- 2009-08-20 WO PCT/US2009/054537 patent/WO2010030488A2/en active Application Filing
- 2009-08-28 TW TW98128971A patent/TWI469385B/zh not_active IP Right Cessation
-
2010
- 2010-05-13 US US12/779,813 patent/US7915621B2/en active Active
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JPH04232902A (ja) * | 1990-05-25 | 1992-08-21 | American Teleph & Telegr Co <Att> | 部分的又は完全にくぼんだ微細レンズの製作 |
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JP2003347586A (ja) * | 2003-07-08 | 2003-12-05 | Toshiba Corp | 半導体発光素子 |
WO2007146860A1 (en) * | 2006-06-12 | 2007-12-21 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
Also Published As
Publication number | Publication date |
---|---|
CN102138231B (zh) | 2013-08-28 |
US7741134B2 (en) | 2010-06-22 |
US7915621B2 (en) | 2011-03-29 |
JP5743890B2 (ja) | 2015-07-01 |
US20100219440A1 (en) | 2010-09-02 |
WO2010030488A3 (en) | 2010-05-06 |
US20100065866A1 (en) | 2010-03-18 |
TWI469385B (zh) | 2015-01-11 |
CN102138231A (zh) | 2011-07-27 |
WO2010030488A2 (en) | 2010-03-18 |
TW201019510A (en) | 2010-05-16 |
KR20110059616A (ko) | 2011-06-02 |
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