JP2012502504A5 - - Google Patents
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- Publication number
- JP2012502504A5 JP2012502504A5 JP2011526952A JP2011526952A JP2012502504A5 JP 2012502504 A5 JP2012502504 A5 JP 2012502504A5 JP 2011526952 A JP2011526952 A JP 2011526952A JP 2011526952 A JP2011526952 A JP 2011526952A JP 2012502504 A5 JP2012502504 A5 JP 2012502504A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film material
- metastable species
- silicon
- deposition chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/209,699 | 2008-09-12 | ||
| US12/209,699 US8252112B2 (en) | 2008-09-12 | 2008-09-12 | High speed thin film deposition via pre-selected intermediate |
| PCT/US2009/056445 WO2010030729A2 (en) | 2008-09-12 | 2009-09-10 | High speed thin film deposition via pre-selected intermediate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012502504A JP2012502504A (ja) | 2012-01-26 |
| JP2012502504A5 true JP2012502504A5 (cg-RX-API-DMAC7.html) | 2012-10-25 |
Family
ID=42005730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011526952A Pending JP2012502504A (ja) | 2008-09-12 | 2009-09-10 | あらかじめ選択された中間生成物を介する高速薄膜蒸着 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8252112B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2327087A2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2012502504A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20110053349A (cg-RX-API-DMAC7.html) |
| CN (1) | CN102150236A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2010030729A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9111728B2 (en) | 2011-04-11 | 2015-08-18 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
| US8900402B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| US8980046B2 (en) | 2011-04-11 | 2015-03-17 | Lam Research Corporation | Semiconductor processing system with source for decoupled ion and radical control |
| US9177756B2 (en) | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
| US8900403B2 (en) * | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| CN103022178A (zh) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 利用四氟化硅制作高效率微晶硅薄膜太阳能电池 |
| US20130272928A1 (en) * | 2012-04-12 | 2013-10-17 | Devi Shanker Misra | Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein |
| US10319872B2 (en) | 2012-05-10 | 2019-06-11 | International Business Machines Corporation | Cost-efficient high power PECVD deposition for solar cells |
| EP2994740A4 (en) | 2013-07-09 | 2016-12-28 | Halliburton Energy Services Inc | INTEGRATED CONTROL ELEMENTS WITH SIDE-DISTRIBUTED SPECTRAL FILTERS |
| BR112015029784A2 (pt) | 2013-07-09 | 2017-07-25 | Halliburton Energy Services Inc | sistema, ferramenta de medição e método |
| MX359927B (es) | 2013-12-24 | 2018-10-16 | Halliburton Energy Services Inc | Fabricacion de capas criticas de elementos computacionales integrados. |
| WO2015099706A1 (en) | 2013-12-24 | 2015-07-02 | Halliburton Energy Services, Inc. | Adjusting fabrication of integrated computational elements |
| MX361644B (es) | 2013-12-24 | 2018-12-13 | Halliburton Energy Services Inc | Monitorización en tiempo real de la fabricación de elementos computacionales integrados. |
| US9395721B2 (en) | 2013-12-24 | 2016-07-19 | Halliburton Energy Services, Inc. | In-situ monitoring of fabrication of integrated computational elements |
| WO2015102586A1 (en) | 2013-12-30 | 2015-07-09 | Halliburton Energy Services, Inc. | Determining temperature dependence of complex refractive indices of layer materials during fabrication of integrated computational elements |
| US9371577B2 (en) | 2013-12-31 | 2016-06-21 | Halliburton Energy Services, Inc. | Fabrication of integrated computational elements using substrate support shaped to match spatial profile of deposition plume |
| BR112016015543A2 (pt) | 2014-02-14 | 2017-08-08 | Halliburton Energy Services Inc | Método e sistema |
| US9523786B2 (en) | 2014-03-21 | 2016-12-20 | Halliburton Energy Services, Inc. | Monolithic band-limited integrated computational elements |
| US9708908B2 (en) | 2014-06-13 | 2017-07-18 | Halliburton Energy Services, Inc. | Integrated computational element with multiple frequency selective surfaces |
| CN104152864B (zh) * | 2014-08-22 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 硅薄膜的制备方法 |
| KR102075418B1 (ko) * | 2015-04-14 | 2020-02-11 | (주)디엔에프 | 니켈 함유 박막의 제조방법 및 이에 따라 제조된 니켈 함유 박막 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4504518A (en) * | 1982-09-24 | 1985-03-12 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys and devices using microwave energy |
| US4883686A (en) * | 1988-05-26 | 1989-11-28 | Energy Conversion Devices, Inc. | Method for the high rate plasma deposition of high quality material |
| US5192393A (en) * | 1989-05-24 | 1993-03-09 | Hitachi, Ltd. | Method for growing thin film by beam deposition and apparatus for practicing the same |
| US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
| JP2000096239A (ja) * | 1998-09-21 | 2000-04-04 | Tokuyama Corp | 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置 |
| US6313017B1 (en) * | 1999-01-26 | 2001-11-06 | University Of Vermont And State Agricultural College | Plasma enhanced CVD process for rapidly growing semiconductor films |
| US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| JP4866534B2 (ja) * | 2001-02-12 | 2012-02-01 | エーエスエム アメリカ インコーポレイテッド | 半導体膜の改良された堆積方法 |
| US20060219170A1 (en) * | 2002-01-11 | 2006-10-05 | Energy Conversion Devices, Inc. | Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency |
| US6787185B2 (en) * | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
| US7072028B2 (en) * | 2003-07-25 | 2006-07-04 | Lightwind Corporation | Method and apparatus for chemical monitoring |
| US20080090022A1 (en) * | 2006-10-12 | 2008-04-17 | Energy Conversion Devices, Inc. | High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials |
-
2008
- 2008-09-12 US US12/209,699 patent/US8252112B2/en not_active Expired - Fee Related
-
2009
- 2009-09-10 KR KR1020117005513A patent/KR20110053349A/ko not_active Withdrawn
- 2009-09-10 WO PCT/US2009/056445 patent/WO2010030729A2/en not_active Ceased
- 2009-09-10 EP EP09813573A patent/EP2327087A2/en not_active Withdrawn
- 2009-09-10 JP JP2011526952A patent/JP2012502504A/ja active Pending
- 2009-09-10 CN CN2009801358105A patent/CN102150236A/zh active Pending
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