JP2012501065A5 - - Google Patents

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Publication number
JP2012501065A5
JP2012501065A5 JP2011523298A JP2011523298A JP2012501065A5 JP 2012501065 A5 JP2012501065 A5 JP 2012501065A5 JP 2011523298 A JP2011523298 A JP 2011523298A JP 2011523298 A JP2011523298 A JP 2011523298A JP 2012501065 A5 JP2012501065 A5 JP 2012501065A5
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JP
Japan
Prior art keywords
layer
mirror
semiconductor chip
optoelectronic semiconductor
chip according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011523298A
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English (en)
Japanese (ja)
Other versions
JP5921192B2 (ja
JP2012501065A (ja
Filing date
Publication date
Priority claimed from DE102008039360.6A external-priority patent/DE102008039360B4/de
Application filed filed Critical
Publication of JP2012501065A publication Critical patent/JP2012501065A/ja
Publication of JP2012501065A5 publication Critical patent/JP2012501065A5/ja
Application granted granted Critical
Publication of JP5921192B2 publication Critical patent/JP5921192B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011523298A 2008-08-22 2009-08-05 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 Expired - Fee Related JP5921192B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008039360.6 2008-08-22
DE102008039360.6A DE102008039360B4 (de) 2008-08-22 2008-08-22 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
PCT/DE2009/001111 WO2010020213A1 (de) 2008-08-22 2009-08-05 Optoelektronischer halbleiterchip mit gas-gefülltem spiegel

Publications (3)

Publication Number Publication Date
JP2012501065A JP2012501065A (ja) 2012-01-12
JP2012501065A5 true JP2012501065A5 (https=) 2015-11-26
JP5921192B2 JP5921192B2 (ja) 2016-05-24

Family

ID=41461099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011523298A Expired - Fee Related JP5921192B2 (ja) 2008-08-22 2009-08-05 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法

Country Status (7)

Country Link
US (1) US8761219B2 (https=)
EP (1) EP2316133A1 (https=)
JP (1) JP5921192B2 (https=)
KR (1) KR101704831B1 (https=)
CN (1) CN102099926B (https=)
DE (1) DE102008039360B4 (https=)
WO (1) WO2010020213A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957490B2 (en) 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
KR102465406B1 (ko) * 2016-01-07 2022-11-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
DE102018101389A1 (de) 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683921B1 (en) * 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US6515370B2 (en) * 1997-03-10 2003-02-04 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing the same, circuit board have the same mounted thereon, and electronic equipment having the circuit board
EP1010781A4 (en) * 1997-04-17 2007-04-25 Sekisui Chemical Co Ltd CONDUCTIVE PARTICLES AND METHOD AND DEVICE FOR PRODUCING THE SAME ANISOTROPIC CONDUCTIVE ADHESIVE AND CONDUCTIVE CONNECTION STRUCTURE, AND ELECTRICAL SWITCHING COMPONENTS AND METHOD FOR THE PRODUCTION THEREOF
WO2003019653A2 (de) * 2001-08-24 2003-03-06 Schott Glas Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
DE10164800B4 (de) * 2001-11-02 2005-03-31 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6903381B2 (en) * 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
JP2004332017A (ja) * 2003-05-01 2004-11-25 Sumitomo Electric Ind Ltd ハンダ皮膜の製造方法、ハンダ皮膜を備えたヒートシンク、および半導体素子とヒートシンクの接合体
WO2005089098A2 (en) * 2004-01-14 2005-09-29 The Regents Of The University Of California Ultra broadband mirror using subwavelength grating
US7573074B2 (en) 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
DE102007003282B4 (de) 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip

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