JP2012212870A - 光伝導素子 - Google Patents

光伝導素子 Download PDF

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Publication number
JP2012212870A
JP2012212870A JP2012048692A JP2012048692A JP2012212870A JP 2012212870 A JP2012212870 A JP 2012212870A JP 2012048692 A JP2012048692 A JP 2012048692A JP 2012048692 A JP2012048692 A JP 2012048692A JP 2012212870 A JP2012212870 A JP 2012212870A
Authority
JP
Japan
Prior art keywords
electromagnetic wave
region
semiconductor layer
photoconductive element
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2012048692A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012212870A5 (enExample
Inventor
Ryota Sekiguchi
亮太 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012048692A priority Critical patent/JP2012212870A/ja
Publication of JP2012212870A publication Critical patent/JP2012212870A/ja
Publication of JP2012212870A5 publication Critical patent/JP2012212870A5/ja
Abandoned legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2012048692A 2011-03-18 2012-03-06 光伝導素子 Abandoned JP2012212870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012048692A JP2012212870A (ja) 2011-03-18 2012-03-06 光伝導素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011061440 2011-03-18
JP2011061440 2011-03-18
JP2012048692A JP2012212870A (ja) 2011-03-18 2012-03-06 光伝導素子

Publications (2)

Publication Number Publication Date
JP2012212870A true JP2012212870A (ja) 2012-11-01
JP2012212870A5 JP2012212870A5 (enExample) 2015-04-16

Family

ID=46828197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012048692A Abandoned JP2012212870A (ja) 2011-03-18 2012-03-06 光伝導素子

Country Status (2)

Country Link
US (1) US20120236307A1 (enExample)
JP (1) JP2012212870A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015142101A (ja) * 2014-01-30 2015-08-03 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
WO2018009517A1 (en) * 2016-07-05 2018-01-11 Massachusetts Institute Of Technology Systems and methods for quality control of a periodic structure
CN107819058B (zh) 2017-11-28 2019-07-23 厦门三安光电有限公司 发光二极管
NL2023306B1 (en) * 2019-06-13 2021-01-21 Univ Griffith Optoelectronic coupling platforms and sensors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041215A (ja) * 1983-03-11 1985-03-04 エクソン　リサ−チ　アンド　エンジニアリング　カンパニ− アモルフアス半導体又は絶縁体材料を含んでなる多層材料
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
JP2006086227A (ja) * 2004-09-14 2006-03-30 Osaka Univ 光スイッチ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2127596C (en) * 1993-07-16 2003-12-02 Hui Chun Liu Multicolour voltage tunable quantum well intersubband infrared photodetector and associated method
KR101321280B1 (ko) * 2004-12-07 2013-10-25 피코메트릭스 엘엘씨 광도전 장치
US7605371B2 (en) * 2005-03-01 2009-10-20 Osaka University High-resolution high-speed terahertz spectrometer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041215A (ja) * 1983-03-11 1985-03-04 エクソン　リサ−チ　アンド　エンジニアリング　カンパニ− アモルフアス半導体又は絶縁体材料を含んでなる多層材料
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
JP2006086227A (ja) * 2004-09-14 2006-03-30 Osaka Univ 光スイッチ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015142101A (ja) * 2014-01-30 2015-08-03 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置

Also Published As

Publication number Publication date
US20120236307A1 (en) 2012-09-20

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