JP2012182389A - ナノワイヤ太陽電池 - Google Patents
ナノワイヤ太陽電池 Download PDFInfo
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- JP2012182389A JP2012182389A JP2011045624A JP2011045624A JP2012182389A JP 2012182389 A JP2012182389 A JP 2012182389A JP 2011045624 A JP2011045624 A JP 2011045624A JP 2011045624 A JP2011045624 A JP 2011045624A JP 2012182389 A JP2012182389 A JP 2012182389A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
【解決手段】ナノワイヤ太陽電池1は、半導体基板2から垂直方向に成長しており、半導体基板2上に平面視三角格子状に配置された複数のナノワイヤ半導体3を備える。ナノワイヤ半導体3の横断面に内接する内接円Cの直径をd、相隣り合うナノワイヤ半導体3,3同士の間隔をg、基板2表面からのナノワイヤ半導体3の高さをhとするときに、間隔gに対する高さhの比(h/g)が10〜40の範囲にあり、かつ、内接円Cの直径dが100〜300nmの範囲にある。
【選択図】 図1
Description
ここで、透明樹脂層4を形成するBCB樹脂は、屈折率が空気に近く、またバンドギャップがナノワイヤ半導体3を形成するGaAsより大きいことから、透明樹脂層4によるい光吸収の影響は少ないものと考えられる。また、Al0.8Ga0.2As層21と非晶質SiO2層22とは、バンドギャップがナノワイヤ半導体3を形成するGaAsより大きく、また膜厚もそれぞれ10nm、20nmと薄い。従って、Al0.8Ga0.2As層21、非晶質SiO2層22による光吸収は殆ど無いものと考えられる。
次に、反射防止膜効果を考慮した励起子生成率(s−1)から、次式(3)を用いて短絡電流密度(mA/cm2)を算出した。
短絡電流密度(mA/cm2)は、半導体ナノワイヤ3の光吸収によって生成されたキャリアの総量を示す指標であり、短絡電流密度(mA/cm2)が大きいほど、光吸収率が大きいことを示す。結果を図5に示す。
Claims (4)
- 半導体基板と、該半導体基板から垂直方向に成長しており、該半導体基板上に平面視三角格子状に配置された複数のナノワイヤ半導体とを備えるナノワイヤ太陽電池において、
該ナノワイヤ半導体の横断面に内接する内接円の直径をd、相隣り合う該ナノワイヤ半導体同士の間隔をg、該基板表面からの該ナノワイヤ半導体の高さをhとするときに、間隔gに対する高さhの比(h/g)が10〜40の範囲にあり、かつ、内接円の直径dが100〜300nmの範囲にあることを特徴とするナノワイヤ太陽電池。 - 請求項1記載のナノワイヤ太陽電池において、前記ナノワイヤ半導体の高さhは、1〜4μmの範囲にあることを特徴とするナノワイヤ太陽電池。
- 請求項1または請求項2記載のナノワイヤ太陽電池において、前記相隣り合う該ナノワイヤ半導体同士の間隔gは、200nm以下の範囲にあることを特徴とするナノワイヤ太陽電池。
- 請求項3記載のナノワイヤ太陽電池において、前記相隣り合う該ナノワイヤ半導体同士の間隔gは、20〜200nmの範囲にあることを特徴とするナノワイヤ太陽電池。
Priority Applications (1)
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JP2011045624A JP5920758B2 (ja) | 2011-03-02 | 2011-03-02 | ナノワイヤ太陽電池 |
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JP2011045624A JP5920758B2 (ja) | 2011-03-02 | 2011-03-02 | ナノワイヤ太陽電池 |
Publications (2)
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JP2012182389A true JP2012182389A (ja) | 2012-09-20 |
JP5920758B2 JP5920758B2 (ja) | 2016-05-18 |
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JP2011045624A Expired - Fee Related JP5920758B2 (ja) | 2011-03-02 | 2011-03-02 | ナノワイヤ太陽電池 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015015694A1 (ja) * | 2013-08-01 | 2015-02-05 | パナソニック株式会社 | 光起電力装置 |
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JPS5331987A (en) * | 1976-09-03 | 1978-03-25 | Siemens Ag | Solar battery and method of producing same |
JP2006261666A (ja) * | 2005-03-16 | 2006-09-28 | General Electric Co <Ge> | 高効率無機ナノロッド強化光起電素子 |
JP2008182226A (ja) * | 2007-01-11 | 2008-08-07 | General Electric Co <Ge> | 多層膜−ナノワイヤ複合体、両面及びタンデム太陽電池 |
JP2009507398A (ja) * | 2005-08-22 | 2009-02-19 | キュー・ワン・ナノシステムズ・インコーポレイテッド | ナノ構造およびそれを実施する光起電力セル |
JP2009105382A (ja) * | 2007-10-01 | 2009-05-14 | Honda Motor Co Ltd | 多接合型太陽電池の製造方法 |
JP2009129941A (ja) * | 2007-11-20 | 2009-06-11 | Panasonic Corp | 発光デバイス |
WO2009109445A2 (en) * | 2008-02-29 | 2009-09-11 | International Business Machines Corporation | Photovoltaic devices with high-aspect-ratio nanostructures |
WO2010010972A1 (en) * | 2008-07-24 | 2010-01-28 | Sharp Kabushiki Kaisha | A method of growing a thin film, a method of forming a structure and a device. |
JP2010028092A (ja) * | 2008-07-16 | 2010-02-04 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
WO2010144274A1 (en) * | 2009-06-08 | 2010-12-16 | International Business Machines Corporation | Nano/microwire solar cell fabricated by nano/microsphere lithography |
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- 2011-03-02 JP JP2011045624A patent/JP5920758B2/ja not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5331987A (en) * | 1976-09-03 | 1978-03-25 | Siemens Ag | Solar battery and method of producing same |
JP2006261666A (ja) * | 2005-03-16 | 2006-09-28 | General Electric Co <Ge> | 高効率無機ナノロッド強化光起電素子 |
JP2009507398A (ja) * | 2005-08-22 | 2009-02-19 | キュー・ワン・ナノシステムズ・インコーポレイテッド | ナノ構造およびそれを実施する光起電力セル |
JP2008182226A (ja) * | 2007-01-11 | 2008-08-07 | General Electric Co <Ge> | 多層膜−ナノワイヤ複合体、両面及びタンデム太陽電池 |
JP2009105382A (ja) * | 2007-10-01 | 2009-05-14 | Honda Motor Co Ltd | 多接合型太陽電池の製造方法 |
JP2009129941A (ja) * | 2007-11-20 | 2009-06-11 | Panasonic Corp | 発光デバイス |
WO2009109445A2 (en) * | 2008-02-29 | 2009-09-11 | International Business Machines Corporation | Photovoltaic devices with high-aspect-ratio nanostructures |
JP2010028092A (ja) * | 2008-07-16 | 2010-02-04 | Honda Motor Co Ltd | ナノワイヤ太陽電池及びその製造方法 |
WO2010010972A1 (en) * | 2008-07-24 | 2010-01-28 | Sharp Kabushiki Kaisha | A method of growing a thin film, a method of forming a structure and a device. |
WO2010144274A1 (en) * | 2009-06-08 | 2010-12-16 | International Business Machines Corporation | Nano/microwire solar cell fabricated by nano/microsphere lithography |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2015015694A1 (ja) * | 2013-08-01 | 2015-02-05 | パナソニック株式会社 | 光起電力装置 |
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