JP2012169225A - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

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Publication number
JP2012169225A
JP2012169225A JP2011031215A JP2011031215A JP2012169225A JP 2012169225 A JP2012169225 A JP 2012169225A JP 2011031215 A JP2011031215 A JP 2011031215A JP 2011031215 A JP2011031215 A JP 2011031215A JP 2012169225 A JP2012169225 A JP 2012169225A
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film forming
substrate
processed
vapor deposition
forming material
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Hiroyoshi Kaneko
裕是 金子
Teruyuki Hayashi
輝幸 林
Yuji Ono
裕司 小野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2011031215A priority Critical patent/JP2012169225A/en
Priority to TW101104817A priority patent/TW201247913A/en
Priority to KR1020120015423A priority patent/KR101352949B1/en
Priority to CN2012100357522A priority patent/CN102644051A/en
Publication of JP2012169225A publication Critical patent/JP2012169225A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve such a problem that a deposition material jetted from a vapor deposition head recoils between a processed substrate and a processing chamber or another vapor deposition head, adheres to a part different from the part of evaporation coating, or vapor from respective deposition material jetting sections is mixed and enter an adjoining film as impurities.SOLUTION: The deposition apparatus 1 comprising a processing chamber 11 in which a processed substrate G is housed, and a deposition material jetting section 13 which jets the vapor of a deposition material toward the processed substrate G is further provided, in the processing chamber 11, with capturing sections 16, 16,... for capturing the deposition material jetted from the deposition material jetting section 13 and recoiled on the processed substrate G.

Description

本発明は、成膜材料の蒸気を被処理基板へ向けて噴出する成膜材料噴出部を備えた成膜装置に関する。   The present invention relates to a film forming apparatus including a film forming material jetting unit that jets a vapor of a film forming material toward a substrate to be processed.

特許文献１には、蒸着法によって有機ＥＬ素子を製造する成膜装置が開示されている。成膜装置は、ガラス基板等の被処理基板を収容する処理室を備えており、成膜材料の蒸気を発生させる蒸気発生部が処理室の外部に配置されている。処理室の内部には、配管を通じて蒸気発生部に接続され、蒸気発生部で発生した成膜材料の蒸気をガラス基板へ向けて噴出する成膜材料噴出部が設けられている。成膜材料噴出部は、並設された複数の蒸着ヘッドを有し、各蒸着ヘッドは、それぞれ異なる成膜材料を噴出する。   Patent Document 1 discloses a film forming apparatus for manufacturing an organic EL element by a vapor deposition method. The film forming apparatus includes a processing chamber that accommodates a substrate to be processed such as a glass substrate, and a vapor generation unit that generates vapor of a film forming material is disposed outside the processing chamber. Inside the processing chamber, there is provided a film forming material jetting unit that is connected to the vapor generating unit through a pipe and jets the vapor of the film forming material generated in the vapor generating unit toward the glass substrate. The film forming material jetting unit has a plurality of vapor deposition heads arranged in parallel, and each vapor deposition head jets different film forming materials.

国際公開第２００８／０６６１０３号パンフレットInternational Publication No. 2008/066103 Pamphlet

本願発明者は、蒸着ヘッドから噴射された成膜材料が被処理基板と、処理室又は他の蒸着ヘッドとの間で反跳し、蒸着されるべき箇所とは異なる部位に成膜材料が付着したり、各成膜材料噴出部からの蒸気が混じりあい隣接する膜中に不純物として混入するという問題を発見した。なお、特許文献１に記載の成膜装置には、成膜材料の反跳の問題、及びその問題を解決する構成は開示されていない。   The inventor of the present application recoils between the substrate to be processed and the processing chamber or another vapor deposition head, and the film deposition material adheres to a portion different from the portion to be vapor deposited. Or the vapor from each film-forming material ejection part was mixed and found to be mixed as an impurity in the adjacent film. Note that the film formation apparatus described in Patent Document 1 does not disclose the problem of film material recoil and a configuration that solves the problem.

本発明に係る成膜装置は、被処理基板を収容する処理室と、成膜材料の蒸気を該被処理基板へ向けて噴出する成膜材料噴出部とを備える成膜装置において、前記成膜材料噴出部から噴出され、前記被処理基板で反跳した成膜材料を捕捉する捕捉部を前記処理室の内部に備えることを特徴とする。   The film forming apparatus according to the present invention is a film forming apparatus comprising: a processing chamber that houses a substrate to be processed; and a film forming material jetting unit that jets vapor of the film forming material toward the substrate to be processed. A capture unit that captures the film forming material ejected from the material ejection unit and recoiled by the substrate to be processed is provided inside the processing chamber.

本発明にあっては、被処理基板で反跳した成膜材料は、捕捉部によって捕捉される。従って、蒸着ヘッドから噴射された成膜材料が被処理基板と、処理室又は他の蒸着ヘッドとの間で反跳することを防止することが可能である。   In the present invention, the film forming material that has rebounded from the substrate to be processed is captured by the capturing unit. Therefore, it is possible to prevent the deposition material sprayed from the vapor deposition head from recoiling between the substrate to be processed and the processing chamber or another vapor deposition head.

本発明によれば、蒸着ヘッドから噴射された成膜材料が被処理基板と、処理室又は他の蒸着ヘッドとの間で反跳し、蒸着されるべき箇所とは異なる部位に成膜材料が付着したり、各成膜材料噴出部からの蒸気が混じりあい隣接する膜中に不純物として混入することを防止することができる。   According to the present invention, the film forming material sprayed from the vapor deposition head recoils between the substrate to be processed and the processing chamber or another vapor deposition head, and the film forming material is located at a position different from the position to be vapor deposited. It is possible to prevent the vapors from adhering to each other and the vapors from the respective film forming material ejection portions from mixing and mixing as impurities in the adjacent film.

本実施の形態に係る成膜システムの一構成例を概念的に説明する説明図である。It is explanatory drawing which illustrates notionally one structural example of the film-forming system which concerns on this Embodiment. 成膜装置の一構成例を模式的に示す斜視図である。It is a perspective view which shows typically the example of 1 structure of the film-forming apparatus. 成膜装置の一構成例を模式的に示す側断面図である。It is a sectional side view which shows typically the example of 1 structure of the film-forming apparatus. 図３のIV−IV線断面図である。It is the IV-IV sectional view taken on the line of FIG. 第１蒸着ヘッドの底面図である。It is a bottom view of the 1st vapor deposition head. 本実施の形態に係る捕捉部の一構成例を示した側断面図である。It is the sectional side view which showed one structural example of the capture | acquisition part which concerns on this Embodiment. 捕捉部の作用を概念的に示した説明図である。It is explanatory drawing which showed notionally the effect | action of the capture part. 捕捉部の作用を説明するための実験装置を模式的に示した側面図である。It is the side view which showed typically the experimental apparatus for demonstrating the effect | action of a capture part. 変形例１に係る捕捉部の一構成例を示した側断面図である。9 is a side cross-sectional view illustrating a configuration example of a capturing unit according to Modification Example 1. FIG. 変形例２に係る捕捉部の一構成例を示した側断面図である。10 is a side cross-sectional view illustrating a configuration example of a capturing unit according to Modification Example 2. FIG. 変形例３に係る成膜装置の一構成例を概念的に説明する説明図である。It is explanatory drawing which illustrates notionally one structural example of the film-forming apparatus which concerns on the modification 3. FIG. 変形例３に係る捕捉部の一構成例を示した側断面図である。10 is a side cross-sectional view illustrating a configuration example of a capturing unit according to Modification 3. FIG. 変形例４に係る捕捉部の一構成例を示した側断面図である。10 is a side cross-sectional view illustrating a configuration example of a capturing unit according to Modification Example 4. FIG.

以下、本発明をその実施の形態を示す図面に基づいて詳述する。
図１は、本実施の形態に係る成膜システムの一構成例を概念的に説明する説明図である。本実施の形態に係る成膜システムは、被処理基板Ｇ（図３参照）の搬送方向に沿って直列順に並べたローダ９０、トランスファーチャンバ９１、成膜装置１、トランスファーチャンバ９２、エッチング装置９３、トランスファーチャンバ９４、スパッタリング装置９５、トランスファーチャンバ９６、ＣＶＤ装置９７、トランスファーチャンバ９８、及びアンローダ９９にて構成される。 Hereinafter, the present invention will be described in detail with reference to the drawings illustrating embodiments thereof.
FIG. 1 is an explanatory diagram conceptually illustrating a configuration example of a film forming system according to the present embodiment. The film forming system according to the present embodiment includes a loader 90, a transfer chamber 91, a film forming apparatus 1, a transfer chamber 92, an etching apparatus 93, which are arranged in series in the transport direction of the substrate G to be processed (see FIG. 3). A transfer chamber 94, a sputtering apparatus 95, a transfer chamber 96, a CVD apparatus 97, a transfer chamber 98, and an unloader 99 are configured.

ローダ９０は、被処理基板Ｇ、例えば予め表面にＩＴＯ層が形成されたガラス基板Ｇを成膜システム内に搬入するための装置である。トランスファーチャンバ９１，９２，９４，９６，９８は、各処理装置間で被処理基板Ｇを受け渡しするための装置である。
成膜装置１は、真空蒸着法にて、被処理基板Ｇ上にホール注入層、ホール輸送層、青発光層、赤発光層、緑発光層、並びに電子輸送層ないし電子注入層を形成するための装置である。詳細は後述する。
エッチング装置９３は、有機層の形状を所定形状に調整するための装置である。
スパッタリング装置９５は、パターンマスクを用いて、例えば銀Ａｇ、マグネシウムＭｇ／銀Ａｇ合金等をスパッタリングすることによって、電子輸送層上に陰極層を形成する装置である。
ＣＶＤ装置９７は、窒化膜等からなる封止層をＣＶＤ法等によって成膜し、ガラス基板Ｇ上に形成された各種膜を封止するための装置である。
アンローダ９９は、被処理基板Ｇを成膜システム外へ搬出するための装置である。 The loader 90 is an apparatus for carrying a substrate to be processed G, for example, a glass substrate G on which an ITO layer has been previously formed, into the film forming system. The transfer chambers 91, 92, 94, 96 and 98 are apparatuses for delivering the substrate to be processed G between the processing apparatuses.
The film forming apparatus 1 forms a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a green light emitting layer, and an electron transport layer or an electron injection layer on the substrate G to be processed by vacuum deposition. It is a device. Details will be described later.
The etching apparatus 93 is an apparatus for adjusting the shape of the organic layer to a predetermined shape.
The sputtering apparatus 95 is an apparatus that forms a cathode layer on an electron transport layer by sputtering, for example, silver Ag, magnesium Mg / silver Ag alloy using a pattern mask.
The CVD apparatus 97 is an apparatus for forming a sealing layer made of a nitride film or the like by the CVD method or the like and sealing various films formed on the glass substrate G.
The unloader 99 is an apparatus for carrying the substrate to be processed G out of the film forming system.

図２は、成膜装置１の一構成例を模式的に示す斜視図、図３は、成膜装置１の一構成例を模式的に示す側断面図、図４は、図３のIV−IV線断面図である。成膜装置１は、被処理基板Ｇを収容する処理室１１と、成膜材料の蒸気を被処理基板Ｇへ向けて噴出する成膜材料噴出部１３とを含む。処理室１１は、搬送方向を長手方向とする中空略直方体形状をなし、アルミニウム、ステンレス等で構成されている。処理室１１の長手方向一端側の面（図２中背面側の面）には、被処理基板Ｇを処理室１１内に搬入するための搬入口１１ａが形成され、長手方向他端側の面（図２中手前側の面）には、被処理基板Ｇを処理室１１外へ搬出するための搬出口１１ｂが形成されている。搬入口１１ａ及び搬出口１１ｂは、搬入方向に対して直交した長手方向を有するスリット状であり、搬入口１１ａ及び搬出口１１ｂの長手方向は略同一である。以下、搬入口１１ａ及び搬出口１１ｂの長手方向を横方向、該横方向及び搬送方向に直交する方向を上下方向という。また、収容室の適宜箇所には、排気孔１１ｃが形成されており、排気孔１１ｃには、処理室１１の外部に配された真空ポンプ１５が排気管１４を介して接続されている。真空ポンプ１５を駆動することにより、処理室１１の内部は所定の圧力、例えば１０-2Ｐａに減圧される。 2 is a perspective view schematically showing a configuration example of the film forming apparatus 1, FIG. 3 is a side sectional view schematically showing a configuration example of the film forming apparatus 1, and FIG. It is IV sectional view. The film forming apparatus 1 includes a processing chamber 11 that accommodates the substrate to be processed G, and a film forming material ejection unit 13 that ejects vapor of the film forming material toward the substrate G to be processed. The processing chamber 11 has a hollow, substantially rectangular parallelepiped shape whose longitudinal direction is the transport direction, and is made of aluminum, stainless steel, or the like. A surface of one end in the longitudinal direction of the processing chamber 11 (a surface on the back side in FIG. 2) is formed with a carry-in port 11a for carrying the substrate G to be processed into the processing chamber 11, and a surface on the other end in the longitudinal direction. A carry-out port 11b for carrying out the substrate G to be processed out of the processing chamber 11 is formed on the front surface in FIG. The carry-in port 11a and the carry-out port 11b have a slit shape having a longitudinal direction orthogonal to the carry-in direction, and the longitudinal directions of the carry-in port 11a and the carry-out port 11b are substantially the same. Hereinafter, the longitudinal direction of the carry-in port 11a and the carry-out port 11b is referred to as a horizontal direction, and the direction perpendicular to the horizontal direction and the conveyance direction is referred to as a vertical direction. Further, an exhaust hole 11 c is formed at an appropriate location of the storage chamber, and a vacuum pump 15 disposed outside the processing chamber 11 is connected to the exhaust hole 11 c through an exhaust pipe 14. By driving the vacuum pump 15, the inside of the processing chamber 11 is depressurized to a predetermined pressure, for example, 10 −2 Pa.

処理室１１内部の底部には、被処理基板Ｇを搬入口１１ａ側から搬出口１１ｂ側へ搬送する搬送装置１２が設置されている。搬送装置１２は、処理室１１の底部に長手方向に沿って設けられた案内レール１２ａと、該案内レール１２ａに案内されて搬送方向、即ち前記長手方向へ移動可能に設けられた移動部材１２ｂと、移動部材１２ｂの上端部に設けられており、被処理基板Ｇを底部に対して略平行になるように支持する支持台１２ｃとを含む。支持台１２ｃの内部には、被処理基板Ｇを保持する静電チャック、被処理基板Ｇの温度を一定に保つためのヒータ、冷媒管等が設けられている。なお、支持台１２ｃは、リニアモータによって移動するように構成されている。   At the bottom inside the processing chamber 11, a transfer device 12 that transfers the substrate G to be processed from the carry-in port 11 a side to the carry-out port 11 b side is installed. The transfer device 12 includes a guide rail 12a provided at the bottom of the processing chamber 11 along the longitudinal direction, and a moving member 12b that is guided by the guide rail 12a and is movable in the transfer direction, that is, the longitudinal direction. And a support base 12c which is provided at the upper end of the moving member 12b and supports the substrate G to be processed so as to be substantially parallel to the bottom. An electrostatic chuck for holding the substrate to be processed G, a heater for keeping the temperature of the substrate to be processed G constant, a refrigerant pipe, and the like are provided inside the support base 12c. The support base 12c is configured to move by a linear motor.

また、処理室１１の上部、搬送方向略中央部には、被処理基板Ｇに対して真空蒸着法にて成膜を行う成膜材料噴出部１３が設けられている。成膜材料噴出部１３は、複数の成膜材料の蒸気を前記被処理基板へ向けてそれぞれ噴出する複数の蒸着ヘッド、即ち、ホール注入層を蒸着させる第１蒸着ヘッド１３ａ、ホール輸送層を蒸着させる第２蒸着ヘッド１３ｂ、青発光層を蒸着させる第３蒸着ヘッド１３ｃ、赤発光層を蒸着させる第４蒸着ヘッド１３ｄ、緑発光層を蒸着させる第５蒸着ヘッド１３ｅ、及び電子輸送層を蒸着させる第６蒸着ヘッド１３ｆを、搬送方向に沿って順に配置して構成されている。成膜材料噴出部１３には、処理室１１の外部に配された蒸気発生部１７が配管１８ａを介して接続されている。図４では、第１蒸着ヘッド１３ａに配管１８ａが接続される構成を代表的に図示しているが、他の第２乃至第６蒸着ヘッド１３ｂ，１３ｃ，１３ｄ，１３ｅ，１３ｆも同様の構成である。以下では、主に第１蒸着ヘッド１３ａ及び蒸気発生部１７の構成について説明する。   In addition, a film forming material ejecting portion 13 that forms a film on the substrate G to be processed by a vacuum vapor deposition method is provided in the upper portion of the processing chamber 11 and substantially in the transport direction. The film-forming material jetting unit 13 vapor-deposits a plurality of vapor deposition heads for jetting vapors of a plurality of film-forming materials toward the substrate to be processed, that is, a first vapor deposition head 13a for vapor-depositing a hole injection layer and a hole transport layer. A second vapor deposition head 13b for vapor deposition, a third vapor deposition head 13c for vapor deposition of a blue light emitting layer, a fourth vapor deposition head 13d for vapor deposition of a red light emission layer, a fifth vapor deposition head 13e for vapor deposition of a green light emission layer, and an electron transport layer. The sixth vapor deposition head 13f is arranged in order along the transport direction. A vapor generation unit 17 disposed outside the processing chamber 11 is connected to the film forming material ejection unit 13 via a pipe 18a. In FIG. 4, the configuration in which the pipe 18a is connected to the first vapor deposition head 13a is representatively illustrated, but the other second to sixth vapor deposition heads 13b, 13c, 13d, 13e, and 13f have the same configuration. is there. Below, the structure of the 1st vapor deposition head 13a and the steam generation part 17 is mainly demonstrated.

蒸気発生部１７は、容器１７ａと、容器１７ａの内部に配された加熱機構１７ｂとを含む。加熱機構１７は、各層の材料である有機系の成膜材料１７ｃを、電源から供給された電力によって加熱するように構成されている。例えば、電気抵抗体にて加熱するように構成されている。こうして、容器１７ａに収納した成膜材料１７ｃを加熱して、有機系の成膜材料１７ｃの蒸気を発生させる。また、容器１７ａには、被処理基板Ｇに対して不活性ガス、例えばＡｒなどの希ガス等からなる輸送ガスを供給する輸送ガス供給管１８ｂが接続されている。配管１８ａ及び輸送ガス供給管１８ｂにはそれぞれ、輸送ガス及び蒸気量を調整するための調整弁１８ｃ，１８ｄが設けられている。なお、配管１８ａ、輸送ガス供給管１８ｂ及び第１蒸着ヘッド１３ａを加熱する、図示しないヒータが各部に設けられている。ヒータは、成膜材料１７ｃの蒸気が管内に付着することを防止するためのものである。輸送ガス供給管１８ｂから容器１７ａに供給され、蒸気温度に加熱された輸送ガスと共に、成膜材料１７ｃの蒸気を蒸気発生部１７から配管１８ａを介して第１蒸着ヘッド１３ａへ供給するように構成されている。
更に、第１蒸着ヘッド１３ａには、成膜処理一時停止時などに、第１蒸着ヘッド１３ａ内の蒸気を排気するための蒸気排出管１８ｅが接続されている。蒸気排出管１８ｅには、該蒸気排出管１８ｅを開閉する開閉弁１８ｆが設けられている。なお、蒸気排出管１８ｅにも、該蒸気排出管１８ｅを加熱するヒータを設けると良い。 The steam generation unit 17 includes a container 17a and a heating mechanism 17b disposed inside the container 17a. The heating mechanism 17 is configured to heat the organic film forming material 17c, which is a material of each layer, with electric power supplied from a power source. For example, it is configured to heat with an electric resistor. In this manner, the film forming material 17c stored in the container 17a is heated to generate vapor of the organic film forming material 17c. The container 17a is connected to a transport gas supply pipe 18b for supplying a transport gas made of an inert gas, for example, a rare gas such as Ar, to the substrate G to be processed. The piping 18a and the transport gas supply pipe 18b are provided with adjusting valves 18c and 18d for adjusting the transport gas and the amount of steam, respectively. In addition, heaters (not shown) for heating the pipe 18a, the transport gas supply pipe 18b, and the first vapor deposition head 13a are provided in each part. The heater is for preventing the vapor of the film forming material 17c from adhering to the inside of the pipe. The vapor of the film forming material 17c is supplied from the vapor generation unit 17 to the first vapor deposition head 13a through the pipe 18a together with the conveyance gas heated to the vapor temperature and supplied from the conveyance gas supply pipe 18b to the container 17a. Has been.
Further, the first vapor deposition head 13a is connected to a vapor discharge pipe 18e for exhausting vapor in the first vapor deposition head 13a when the film forming process is temporarily stopped. The steam discharge pipe 18e is provided with an open / close valve 18f for opening and closing the steam discharge pipe 18e. The steam exhaust pipe 18e may be provided with a heater for heating the steam exhaust pipe 18e.

図５は、第１蒸着ヘッド１３ａの底面図である。第１蒸着ヘッド１３ａの底面には、成膜材料の蒸気を基板Ｇへ噴射する複数の噴出孔１３ｇが設けられている。噴出孔１３ｇは、例えば、基板Ｇの搬送方向に対して直交する方向に直線的に並び配されている。なお、噴出孔１３ｇの配列方法は、成膜材料１７ｃの蒸気を略均一に噴射することができれば特にこれに限定されない。   FIG. 5 is a bottom view of the first vapor deposition head 13a. On the bottom surface of the first vapor deposition head 13a, a plurality of ejection holes 13g for ejecting vapor of the film forming material onto the substrate G are provided. For example, the ejection holes 13g are linearly arranged in a direction orthogonal to the transport direction of the substrate G. The arrangement method of the ejection holes 13g is not particularly limited as long as the vapor of the film forming material 17c can be ejected substantially uniformly.

更に、成膜装置１は、成膜材料噴出部１３から噴出され、被処理基板Ｇで反跳した成膜材料を捕捉する複数の捕捉部１６を処理室の内部に含む。複数の捕捉部１６は、第１乃至第６蒸着ヘッド１３ａ〜１３ｆ間と、第１蒸着ヘッド１３ａの搬送方向上流側と、第２蒸着ヘッド１３ｂの搬送方向下流側とに配されている。各捕捉部１６は、同様の構成であるため、以下では、主に第１蒸着ヘッド１３ａと、第２蒸着ヘッド１３ｂとの間に配された補捉部について説明する。   Furthermore, the film forming apparatus 1 includes a plurality of capturing units 16 that capture the film forming material ejected from the film forming material ejecting unit 13 and recoiled by the substrate G to be processed. The plurality of traps 16 are arranged between the first to sixth vapor deposition heads 13a to 13f, upstream in the conveyance direction of the first vapor deposition head 13a, and downstream in the conveyance direction of the second vapor deposition head 13b. Since each trapping part 16 has the same configuration, the following description will be focused on the trapping part disposed mainly between the first vapor deposition head 13a and the second vapor deposition head 13b.

図６は、本実施の形態に係る捕捉部１６の一構成例を示した側断面図である。捕捉部１６は、成膜材料噴出部１３から噴出され、被処理基板Ｇで反跳した成膜材料が進入する複数の間隙１６ｃを有する。具体的には、捕捉部１６は、第１蒸着ヘッド１３ａと、第２蒸着ヘッド１３ｂとを隔てる隔離壁１６ａと、略矩形状をなし、面対向している複数の板部１６ｂとを有し、複数の板部１６ｂは、被処理基板Ｇ側の一辺が第１及び第２蒸着ヘッド１３ａ，１３ｂよりも被処理基板Ｇ側に位置するように、第１及び第２蒸着ヘッド１３ａ，１３ｂの間に配されている。間隙１６ｃは、対向する複数の板部１６ｂによって構成されている。
より具体的には、隔離壁１６ａは下端部、つまり隔離壁１６ａの被処理基板Ｇ側の部分が被処理基板Ｇ又は支持台１２ｃに対して略平行な下面を有する。複数の板部１６ｂは、第１乃至第６蒸着ヘッド１３ａ〜１３ｆの並列方向と略同一方向に並ぶように面対向し、前記下面から下方へ略垂直に突出している。
より詳細には、捕捉部１６は、第１及び第２蒸着ヘッド１３ａ，１３ｂの横方向略中央部に配されており、捕捉部１６の厚み、即ち板部１６ｂの法線方向における一端側の板部１６ｂと、他端側の板部１６ｂとの距離をＤとした場合、下記式を満たす。下記式を満たした場合、第１及び第２蒸着ヘッド１３ａ，１３ｂから噴射され、捕捉部１６の板部１６ｂに衝突せずに最も鋭い角度で被処理基板Ｇに入射した成膜材料も捕捉部１６によって捕捉することが可能になる。
Ｄ≧２×ｄ×Ｈ／Δｄ
但し、
ｄ：板部１６ｂの下辺、即ち被処理基板Ｇ側の一辺と、被処理基板Ｇとの距離
Ｈ：前記法線方向における第１蒸着ヘッドと、第１蒸着ヘッドに直近の板部１６ｂとの距離
Δｄ：被処理基板Ｇの法線方向における板部１６ｂの下辺、即ち被処理基板Ｇ側の一辺と、第１蒸着ヘッドの下端部との距離 FIG. 6 is a side sectional view showing a configuration example of the capturing unit 16 according to the present embodiment. The capturing unit 16 has a plurality of gaps 16 c into which the film forming material ejected from the film forming material ejecting unit 13 and rebounded from the substrate G to be processed enters. Specifically, the capturing unit 16 includes an isolation wall 16a that separates the first vapor deposition head 13a and the second vapor deposition head 13b, and a plurality of plate portions 16b that are substantially rectangular and face each other. The plurality of plate portions 16b are formed on the first and second vapor deposition heads 13a and 13b so that one side of the substrate G to be processed is positioned closer to the substrate G to be processed than the first and second vapor deposition heads 13a and 13b. Arranged in between. The gap 16c is composed of a plurality of opposing plate portions 16b.
More specifically, the isolation wall 16a has a lower surface, that is, a part of the isolation wall 16a on the substrate G side to be processed has a lower surface substantially parallel to the substrate G to be processed or the support base 12c. The plurality of plate portions 16b face each other so as to be arranged in substantially the same direction as the parallel direction of the first to sixth vapor deposition heads 13a to 13f, and project substantially vertically downward from the lower surface.
More specifically, the capturing unit 16 is disposed at a substantially central portion in the lateral direction of the first and second vapor deposition heads 13a and 13b, and is on the one end side in the normal direction of the capturing unit 16, that is, the plate unit 16b. When the distance between the plate portion 16b and the plate portion 16b on the other end side is D, the following formula is satisfied. When the following formula is satisfied, the film forming material that is injected from the first and second vapor deposition heads 13a and 13b and enters the substrate G to be processed at the sharpest angle without colliding with the plate portion 16b of the capturing portion 16 is also captured. 16 makes it possible to capture.
D ≧ 2 × d × H / Δd
However,
d: The distance between the lower side of the plate portion 16b, that is, one side of the substrate G to be processed, and the substrate G to be processed. H: The first vapor deposition head in the normal direction and the plate portion 16b closest to the first vapor deposition head. Distance Δd: Distance between the lower side of the plate portion 16b in the normal direction of the substrate G to be processed, that is, one side of the substrate G to be processed, and the lower end of the first vapor deposition head

図７は、捕捉部１６の作用を概念的に示した説明図である。第２蒸気ヘッド１３ｂから噴出された成膜材料は、被処理基板Ｇで反跳し、捕捉部１６を構成する複数の板部１６ｂ間に進入する。図７中、第２蒸着ヘッド１３ｂの下端部から伸びる直線は、第２蒸着ヘッド１３ｂから噴射された成膜材料の軌跡を示している。板部１６ｂ間に進入した成膜材料は、該板部１６ｂ間で反跳を繰り返した後、板部１６ｂに付着する。つまり、成膜材料は捕捉部１６に捕捉される。   FIG. 7 is an explanatory diagram conceptually showing the operation of the capturing unit 16. The film forming material ejected from the second vapor head 13 b recoils at the substrate G to be processed and enters between the plurality of plate parts 16 b constituting the capturing part 16. In FIG. 7, a straight line extending from the lower end of the second vapor deposition head 13b indicates a trajectory of the film forming material ejected from the second vapor deposition head 13b. The film forming material that has entered between the plate portions 16b repeats recoil between the plate portions 16b and then adheres to the plate portions 16b. That is, the film forming material is captured by the capturing unit 16.

図８は、捕捉部１６の作用を説明するための実験装置を模式的に示した側面図である。図８Ａに示すように、第１基板２と、第２基板３とが横方向に並べられ、図示しない蒸着ヘッドから噴射された成膜材料の蒸気が第２基板３に直接付着しないように、保護板４が配された実験装置を用意する。そして、成膜材料の蒸気を第１基板２へ噴射する。次いで、第１基板２と、第２基板３とにそれぞれ付着した成膜材料の付着量を測定し、付着量の比を計算する。実験の結果、付着量の比は０．４３であった。つまり、第１基板２に付着した成膜材料の付着量を１とした場合、第２基板３に付着した成膜材料の付着量は０．４３であった。この実験結果より、第１基板２へ噴射された成膜材料の一部は、第１基板２と、保護板４との間で反跳し、第２基板３に付着することが分かる。
他方、図８Ｂに示すように、図８Ａと同様の構成を有し、保護板５に、本実施の形態と同様の捕捉部５ａを設けた実験装置を用意する。そして、成膜材料の蒸気を第１基板２へ噴射する。次いで、第１基板２と、第２基板３とにそれぞれ付着した成膜材料の付着量を測定し、付着量の比を計算する。実験の結果、付着量の比は０．０３７であった。
この実験結果より、捕捉部５ａは、第１基板２で反跳した成膜材料を捕捉し、成膜材料の反跳を防止する機能を有することが確かめられた。 FIG. 8 is a side view schematically showing an experimental apparatus for explaining the operation of the capturing unit 16. As shown in FIG. 8A, the first substrate 2 and the second substrate 3 are arranged in the horizontal direction so that the vapor of the film forming material sprayed from the vapor deposition head (not shown) does not directly adhere to the second substrate 3. An experimental device provided with a protective plate 4 is prepared. Then, vapor of the film forming material is jetted onto the first substrate 2. Next, the adhesion amounts of the film forming materials adhering to the first substrate 2 and the second substrate 3 are measured, and the ratio of the adhesion amounts is calculated. As a result of the experiment, the ratio of the adhesion amount was 0.43. That is, when the amount of deposition material deposited on the first substrate 2 is 1, the amount of deposition material deposited on the second substrate 3 is 0.43. From this experimental result, it can be seen that a part of the film forming material sprayed onto the first substrate 2 recoils between the first substrate 2 and the protective plate 4 and adheres to the second substrate 3.
On the other hand, as shown in FIG. 8B, an experimental apparatus having the same configuration as that of FIG. 8A and provided with a capturing part 5a similar to that of the present embodiment on the protective plate 5 is prepared. Then, vapor of the film forming material is jetted onto the first substrate 2. Next, the adhesion amounts of the film forming materials adhering to the first substrate 2 and the second substrate 3 are measured, and the ratio of the adhesion amounts is calculated. As a result of the experiment, the ratio of the adhesion amount was 0.037.
From this experimental result, it was confirmed that the capturing unit 5a has a function of capturing the film-forming material recoiled on the first substrate 2 and preventing the film-forming material from recoiling.

本実施の形態にあっては、蒸着ヘッドから噴射された成膜材料が被処理基板Ｇと、処理室１１又は第１乃至第６蒸着ヘッド１３ａ〜１３ｆとの間で反跳し、蒸着されるべき箇所とは異なる部位に成膜材料が付着したり、第１乃至第６蒸着ヘッド１３ａ〜１３ｆからの蒸気が混じりあい隣接する膜中に不純物として混入することを防止することができる。従って、一の成膜材料を蒸着させている際、他の成膜材料が混入して蒸着されることを防止することができる。   In the present embodiment, the film forming material sprayed from the vapor deposition head recoils between the substrate to be processed G and the processing chamber 11 or the first to sixth vapor deposition heads 13a to 13f, and is vapor deposited. It is possible to prevent the deposition material from adhering to a site different from the location where it should be, or the vapor from the first to sixth vapor deposition heads 13a to 13f from mixing and mixing as impurities in the adjacent film. Therefore, when one film forming material is vapor-deposited, it can be prevented that another film forming material is mixed and vapor-deposited.

なお、本実施の形態では、隔離壁１６ａの下端部に複数の板部１６ｂを設けた捕捉部１６を説明したが、複数の板部１６ｂのみで捕捉部１６を構成しても良い。   In the present embodiment, the capturing unit 16 provided with the plurality of plate portions 16b at the lower end portion of the isolation wall 16a has been described. However, the capturing unit 16 may be configured by only the plurality of plate portions 16b.

また、捕捉部１６を第１乃至第６蒸着ヘッド１３ａ〜１３ｆの間と、搬送方向両側とに配置した例を説明したが、処理室内のその他の部位に捕捉部１６を設けても良い。例えば、処理室の上部に捕捉部１６を設けると良い。この場合、被処理基板Ｇと、処理室の上部との間で成膜材料が反跳することを防止することができる。また、処理室の内側壁及び底部に捕捉部１６を設けても良い。   Moreover, although the example which has arrange | positioned the capture | acquisition part 16 between the 1st thru | or 6th vapor deposition heads 13a-13f and the conveyance direction both sides was demonstrated, you may provide the capture | acquisition part 16 in the other site | part in a process chamber. For example, the capturing unit 16 may be provided in the upper part of the processing chamber. In this case, the film forming material can be prevented from recoiling between the substrate to be processed G and the upper portion of the processing chamber. Moreover, you may provide the capture | acquisition part 16 in the inner wall and bottom part of a process chamber.

更に、複数の板部１６ｂが等間隔に並んだ捕捉部１６を説明したが、各板部１６ｂの間隔が異なるように構成しても良い。各板部１６ｂの間隔が非周期的である場合、より効果的に成膜材料を捕捉することが可能になる。
更にまた、本実施の形態では、主に有機系の成膜材料を捕捉する捕捉部について説明したが、無機系の成膜材料を成膜する成膜装置に本実施の形態に係る捕捉部を適用しても良い。 Furthermore, although the capturing part 16 in which a plurality of plate parts 16b are arranged at equal intervals has been described, the interval between the plate parts 16b may be different. When the interval between the plate portions 16b is aperiodic, the film forming material can be captured more effectively.
Furthermore, in the present embodiment, the capturing unit that mainly captures the organic film forming material has been described. However, the capturing unit according to the present embodiment is added to the film forming apparatus that forms the inorganic film forming material. It may be applied.

（変形例１）
変形例１に係る成膜装置１は、捕捉部１１６の構成のみが実施の形態と異なるため、以下では主に上記相異点について説明する。
図９は、変形例１に係る捕捉部１１６の一構成例を示した側断面図である。変形例１に係る捕捉部１１６は、実施の形態と同様、隔離壁１１６ａと、複数の板部１１６ｂとを有し、複数の板部１１６ｂによって、間隙１１６ｃが構成されている。複数の板部１１６ｂは、被処理基板Ｇ側の部位が直近の第１蒸着ヘッド１３ａ又は第２蒸着ヘッド１３ｂ側へ曲がっている。例えば、第１蒸着ヘッド１３ａ側に位置する板部１１６ｂは、被処理基板Ｇ側の部位が第１蒸着ヘッド１３ａ側に曲がり、第２蒸着ヘッド１３ｂ側に位置する板部１１６ｂは、被処理基板Ｇ側の部位が第２蒸着ヘッド１３ｂ側に曲がっている。他の第２乃至第６蒸着ヘッド１３ｂ〜１３ｆ間に配された捕捉部１１６も同様の構成である。 (Modification 1)
Since the film forming apparatus 1 according to the modification 1 is different from the embodiment only in the configuration of the capturing unit 116, the difference will be mainly described below.
FIG. 9 is a side sectional view showing a configuration example of the capturing unit 116 according to the first modification. As in the embodiment, the capturing unit 116 according to the first modification includes an isolation wall 116a and a plurality of plate portions 116b, and a gap 116c is configured by the plurality of plate portions 116b. The plurality of plate portions 116b are bent toward the first vapor deposition head 13a or the second vapor deposition head 13b on the substrate G side. For example, the plate portion 116b located on the first vapor deposition head 13a side has a portion on the substrate G side to be bent to the first vapor deposition head 13a side, and the plate portion 116b located on the second vapor deposition head 13b side represents the substrate to be treated. The site on the G side is bent toward the second vapor deposition head 13b. The capturing unit 116 disposed between the other second to sixth vapor deposition heads 13b to 13f has the same configuration.

変形例１にあっては、板部１１６ｂの被処理基板Ｇ側の部位が直近の第１乃至第６蒸着ヘッド１３ａ〜１３ｆ側へ曲がっているため、被処理基板Ｇで反跳した成膜材料をより効果的に捕捉することができる。   In the modified example 1, since the portion of the plate portion 116b on the substrate G side is bent toward the nearest first to sixth vapor deposition heads 13a to 13f, the film forming material that has recoiled on the substrate G to be processed is obtained. Can be captured more effectively.

（変形例２）
変形例２に係る成膜装置１は、捕捉部２１６の構成のみが実施の形態と異なるため、以下では主に上記相異点について説明する。
図１０は、変形例２に係る捕捉部２１６の一構成例を示した側断面図である。具体的には、捕捉部２１６は、第１蒸着ヘッド１３ａと、第２蒸着ヘッド１３ｂとを隔てる隔離壁２１６ａと、隔離壁２１６ａの下部、即ち被処理基板Ｇ側の部位に形成されており、成膜材料噴出部１３から噴出され、被処理基板Ｇで反跳した成膜材料が進入する複数の穴部２１６ｂを有する。穴部２１６ｂは、長穴であり、長手方向が第１乃至第６蒸着ヘッド１３ａ〜１３ｆの並列方向に対して直交する方向である。他の第２乃至第６蒸着ヘッド１３ｂ〜１３ｆ間に配された捕捉部２１６も同様の構成である。 (Modification 2)
Since the film forming apparatus 1 according to the modification 2 is different from the embodiment only in the configuration of the capturing unit 216, the difference will be mainly described below.
FIG. 10 is a side cross-sectional view illustrating a configuration example of the capturing unit 216 according to the second modification. Specifically, the capturing unit 216 is formed in a separation wall 216a that separates the first vapor deposition head 13a and the second vapor deposition head 13b, and a lower portion of the separation wall 216a, that is, a portion on the substrate to be processed G side. It has a plurality of holes 216b into which the film forming material ejected from the film forming material ejecting part 13 and rebounded from the substrate G to be processed enters. The hole 216b is a long hole, and the longitudinal direction is a direction orthogonal to the parallel direction of the first to sixth vapor deposition heads 13a to 13f. The capturing unit 216 arranged between the other second to sixth vapor deposition heads 13b to 13f has the same configuration.

変形例２にあっては、実施の形態と同様の効果を奏する。つまり、第１乃至第６蒸着ヘッド１３ａ〜１３ｆから噴射された成膜材料が被処理基板Ｇと、処理室又は他の蒸着ヘッドとの間で反跳し、蒸着されるべき箇所とは異なる部位に成膜材料が付着することを防止することができる。   In the second modification, the same effects as in the embodiment are obtained. That is, the film forming material sprayed from the first to sixth vapor deposition heads 13a to 13f recoils between the substrate to be processed G and the processing chamber or another vapor deposition head, and is different from the portion to be vapor deposited. It is possible to prevent the film forming material from adhering to the film.

なお、変形例２では、長穴を有する捕捉部を説明したが、長穴は一例であり、複数の円形、その他の形状の穴部を有する捕捉部を備えるように構成しても良い。   In addition, although the capture part which has an elongate hole was demonstrated in the modification 2, an elongate hole is an example and you may comprise so that the capture | acquisition part which has a some circular and other shape hole part may be provided.

（変形例３）
変形例３に係る成膜処理システムは、成膜装置３０１がフェースダウン式である点と、捕捉部３１６の配置のみが実施の形態と異なるため、以下では主に上記相異点について説明する。
図１１は、変形例３に係る成膜装置３０１の一構成例を概念的に説明する説明図である。変形例３に係る成膜装置３０１は、実施の形態と同様の処理室１１を備える。処理室１１の底部には、成膜材料噴出部３１３が設けられている。成膜材料噴出部３１３は、搬送方向に並んだ第１乃至第６蒸着ヘッド３１３ａ〜３１３ｆを有し、各第１乃至第６蒸着ヘッド３１３ａ〜３１３ｆ間には、捕捉部３１６が配されている。 (Modification 3)
The film forming system according to Modification 3 is different from the embodiment only in that the film forming apparatus 301 is a face-down type and only the arrangement of the capturing unit 316. Therefore, the differences will be mainly described below.
FIG. 11 is an explanatory diagram for conceptually explaining a configuration example of the film forming apparatus 301 according to the third modification. A film forming apparatus 301 according to Modification 3 includes the same processing chamber 11 as in the embodiment. A film forming material ejection portion 313 is provided at the bottom of the processing chamber 11. The film forming material ejection unit 313 includes first to sixth vapor deposition heads 313a to 313f arranged in the transport direction, and a capture unit 316 is disposed between each of the first to sixth vapor deposition heads 313a to 313f. .

また、処理室１１内部には、被処理基板Ｇを保持し、搬入口１１ａから搬出口１１ｂへ搬送する搬送装置３１２が設置されている。   Further, inside the processing chamber 11, a transfer device 312 that holds the substrate G to be processed and transfers it from the carry-in port 11 a to the carry-out port 11 b is installed.

図１２は、変形例３に係る捕捉部３１６の一構成例を示した側断面図である。実施の形態と同様、捕捉部３１６は、成膜材料噴出部３１３から噴出され、被処理基板Ｇで反跳した成膜材料が進入する複数の間隙３１６ｃを有する。具体的には、捕捉部３１６は、第１蒸着ヘッド３１３ａと、第２蒸着ヘッド３１３ｂとを隔てる隔離壁３１６ａと、略矩形状をなし、面対向している複数の板部３１６ｂとを有し、複数の板部３１６ｂは、被処理基板Ｇ側の一辺が第１乃至第６蒸着ヘッド１３ａ〜１３ｆよりも被処理基板Ｇ側に位置するように、第１乃至第６蒸着ヘッド１３ａ〜１３ｆの間に配されている。間隙３１６ｃは、対向する複数の板部３１６ｂによって構成されている。
より具体的には、隔離壁３１６ａの上端部、つまり隔離壁３１６ａの被処理基板Ｇ側の部分が被処理基板Ｇ又は搬送装置３１２に対して略平行な上面を有する。複数の板部３１６ｂは、第１乃至第６蒸着ヘッド１３ａ〜１３ｆの並列方向と略同一方向に並ぶように面対向し、前記上面から上方へ略垂直に突出している。 FIG. 12 is a side cross-sectional view illustrating a configuration example of the capturing unit 316 according to the third modification. As in the embodiment, the capturing unit 316 has a plurality of gaps 316 c into which the film forming material ejected from the film forming material ejecting unit 313 and recoiled at the substrate to be processed G enters. Specifically, the capturing unit 316 includes a separation wall 316a that separates the first vapor deposition head 313a and the second vapor deposition head 313b, and a plurality of plate portions 316b that are substantially rectangular and face each other. The plurality of plate portions 316b of the first to sixth vapor deposition heads 13a to 13f are arranged such that one side of the substrate G to be processed is positioned closer to the substrate G to be processed than the first to sixth vapor deposition heads 13a to 13f. Arranged in between. The gap 316c is configured by a plurality of opposing plate portions 316b.
More specifically, the upper end portion of the isolation wall 316 a, that is, the portion of the isolation wall 316 a on the target substrate G side has an upper surface that is substantially parallel to the target substrate G or the transfer apparatus 312. The plurality of plate portions 316b face each other so as to be arranged in substantially the same direction as the parallel direction of the first to sixth vapor deposition heads 13a to 13f, and protrude substantially upward from the upper surface.

変形例３にあっては、実施の形態と同様の効果を奏する。つまり、第１乃至第６蒸着ヘッド３１３ａ〜３１３ｆから噴射された成膜材料が被処理基板Ｇと、処理室１１又は他の第１乃至第６蒸着ヘッド１３ａ〜１３ｆとの間で反跳し、蒸着されるべき箇所とは異なる部位に成膜材料が付着することを防止することができる。   In the third modification, the same effect as in the embodiment can be obtained. That is, the film forming material sprayed from the first to sixth vapor deposition heads 313a to 313f rebounds between the substrate G to be processed and the processing chamber 11 or the other first to sixth vapor deposition heads 13a to 13f, It is possible to prevent the deposition material from adhering to a site different from the location to be deposited.

変形例４に係る成膜処理システムは、捕捉部４１６の構造及び処理室４１１に対する取り付け構造のみが実施の形態と異なるため、以下では主に上記相異点について説明する。
図１３は、変形例４に係る捕捉部４１６の一構成例を示した側断面図である。
変形例４に係る捕捉部４１６は、実施の形態と同様、隔離壁４１６ａと、複数の板部４１６ｂとを有し、複数の板部４１６ｂによって、間隙４１６ｃが構成されている。隔離壁４１６ａの内部には、捕捉部４１６を加熱する加熱部４１６ｄが設けられている。加熱部４１６ｄは、例えばカートリッジヒータであり、加熱部４１６ｄの動作は、図示しない制御部によって制御される。制御部は、例えば、成膜処理停止時に加熱部４１６ｄを動作させる。なお、加熱部４１６ｄによる加熱を手動で入切することが可能なスイッチを備える構成にしても良い。
捕捉部４１６は、良好な熱伝導性を有する材料、例えば銅で形成されている。なお、捕捉部４１６の表面を良好な熱伝導性を有する材料によって被覆するようにしても良い。 Since only the structure of the capturing unit 416 and the attachment structure to the processing chamber 411 are different from those of the embodiment, the film forming processing system according to the modified example 4 will mainly describe the above differences.
FIG. 13 is a side cross-sectional view illustrating a configuration example of the capturing unit 416 according to the fourth modification.
Similar to the embodiment, the capturing unit 416 according to the modification 4 includes an isolation wall 416a and a plurality of plate portions 416b, and a gap 416c is configured by the plurality of plate portions 416b. A heating unit 416d for heating the capturing unit 416 is provided inside the isolation wall 416a. The heating unit 416d is, for example, a cartridge heater, and the operation of the heating unit 416d is controlled by a control unit (not shown). For example, the control unit operates the heating unit 416d when the film forming process is stopped. In addition, you may make it the structure provided with the switch which can turn on / off the heating by the heating part 416d manually.
The capturing part 416 is made of a material having good thermal conductivity, for example, copper. Note that the surface of the capturing part 416 may be covered with a material having good thermal conductivity.

成膜装置は、処理室４１１に捕捉部４１６を着脱自在に保持する保持部４１１ｄを有する。保持部４１１ｄは、例えば、第１乃至第６蒸着ヘッド１３ａ〜１３ｆ間と、第１蒸着ヘッド１３ａの搬送方向上流側と、第２蒸着ヘッド１３ｆの搬送方向下流側とに設けられた凹部である。   The film forming apparatus includes a holding unit 411d that detachably holds the capturing unit 416 in the processing chamber 411. The holding part 411d is, for example, a recess provided between the first to sixth vapor deposition heads 13a to 13f, on the upstream side in the conveyance direction of the first vapor deposition head 13a, and on the downstream side in the conveyance direction of the second vapor deposition head 13f. .

このように構成された成膜処理システムにあっては、所定のタイミングで加熱部４１６ｄを動作させることによって、捕捉部４１６を加熱し、捕捉部４１６に付着した成膜材料を蒸発させ、除去することができる。この場合、捕捉部４１６を処理室４１１から取り外さずに、捕捉部４１６を清掃することができる。   In the film deposition processing system configured as described above, by operating the heating unit 416d at a predetermined timing, the capturing unit 416 is heated, and the film forming material attached to the capturing unit 416 is evaporated and removed. be able to. In this case, the capturing unit 416 can be cleaned without removing the capturing unit 416 from the processing chamber 411.

また、保持部４１１ｄから捕捉部４１６を取り外して、ウェットクリーニングを行うこともできる。使用者は、ウェットクリーニングされた捕捉部４１６を、再び保持部４１１ｄの凹部に差し込むことによって、処理室４１１の上部に取り付けることができる。   Alternatively, the capturing unit 416 can be removed from the holding unit 411d to perform wet cleaning. The user can attach the wet-cleaned capturing portion 416 to the upper portion of the processing chamber 411 by inserting it again into the concave portion of the holding portion 411d.

なお、フェイスアップ成膜の場合、加熱部４１６ｄ及び保持部４１１ｄの双方を備える構成が好ましい。フェイスダウン成膜の場合、加熱部４１６ｄは必ずしも必要が無い。   In the case of face-up film formation, a configuration including both the heating unit 416d and the holding unit 411d is preferable. In the case of face-down film formation, the heating unit 416d is not necessarily required.

また、隔離壁４１６ａの内部に、捕捉部４１６を冷却する水流路を設けても良い。捕捉部４１６を冷却することによって、被処理基板Ｇで反跳した成膜材料を、より効率的に捕捉することができる。   Further, a water flow path for cooling the capturing part 416 may be provided inside the isolation wall 416a. By cooling the capturing unit 416, the film forming material that has rebounded from the substrate G to be processed can be captured more efficiently.

今回開示された実施の形態はすべての点で例示であって、制限的なものでは無いと考えられるべきである。本発明の範囲は、上記した意味では無く、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。   The embodiments disclosed herein are illustrative in all respects and should not be considered as restrictive. The scope of the present invention is defined not by the above-mentioned meaning but by the scope of the claims, and is intended to include all modifications within the meaning and scope equivalent to the scope of the claims.

１ 成膜装置
１１ 処理室
１２ｃ 支持台
１３ 成膜材料噴出部
１３ａ 第１蒸着ヘッド
１３ｂ 第２蒸着ヘッド
１３ｃ 第３蒸着ヘッド
１３ｄ 第４蒸着ヘッド
１３ｅ 第５蒸着ヘッド
１３ｆ 第６蒸着ヘッド
１６，１１６，２１６，３１６ 捕捉部
１６ａ，１１６ａ，２１６ａ，３１６ａ 隔離壁
１６ｂ，１１６ｂ，３１６ｂ 板部
１６ｃ，１１６ｃ，３１６ｃ 間隙
２１６ｂ 穴部
Ｇ 被処理基板 DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 11 Processing chamber 12c Support stand 13 Film-forming material ejection part 13a 1st vapor deposition head 13b 2nd vapor deposition head 13c 3rd vapor deposition head 13d 4th vapor deposition head 13e 5th vapor deposition head 13f 6th vapor deposition head 16,116, 216, 316 Trapping part 16a, 116a, 216a, 316a Separation wall 16b, 116b, 316b Plate part 16c, 116c, 316c Gap 216b Hole part G Substrate

Claims (7)

被処理基板を収容する処理室と、成膜材料の蒸気を該被処理基板へ向けて噴出する成膜材料噴出部とを備える成膜装置において、
前記成膜材料噴出部から噴出され、前記被処理基板で反跳した成膜材料を捕捉する捕捉部を前記処理室の内部に備える
ことを特徴とする成膜装置。 In a film forming apparatus including a processing chamber for storing a substrate to be processed, and a film forming material ejection unit that ejects vapor of the film forming material toward the substrate to be processed.
A film forming apparatus, comprising: a capturing unit configured to capture a film forming material ejected from the film forming material ejecting unit and recoiled by the substrate to be processed. 前記捕捉部は、
前記成膜材料噴出部から噴出され、前記被処理基板で反跳した成膜材料が進入する複数の間隙又は穴部を有する
ことを特徴とする請求項１に記載の成膜装置。 The capturing part is
The film forming apparatus according to claim 1, further comprising a plurality of gaps or holes into which the film forming material ejected from the film forming material ejecting part and rebounded from the substrate to be processed enters. 前記捕捉部は、
対向している複数の板部を備える
ことを特徴とする請求項１又は請求項２に記載の成膜装置。 The capturing part is
The film forming apparatus according to claim 1, further comprising a plurality of plate portions facing each other. 前記被処理基板を支持する支持台を備え、
前記板部は、
面方向が前記支持台に対して交差するように配されており、前記被処理基板側の部位が前記成膜材料噴出部側へ曲がっている
ことを特徴とする請求項３に記載の成膜装置。 A support base for supporting the substrate to be processed;
The plate portion is
The film formation according to claim 3, wherein a surface direction is arranged so as to intersect the support base, and a portion on the substrate to be processed is bent toward the film formation material ejection portion side. apparatus. 前記成膜材料噴出部は、
複数の成膜材料の蒸気を前記被処理基板へ向けてそれぞれ噴出する複数の蒸着ヘッドを備え、
前記捕捉部は、
前記複数の前記蒸着ヘッドの間に配されている
ことを特徴とする請求項１乃至請求項４のいずれか一つに記載の成膜装置。 The film forming material ejection part is
A plurality of vapor deposition heads each ejecting vapors of a plurality of film forming materials toward the substrate to be processed;
The capturing part is
The film forming apparatus according to claim 1, wherein the film forming apparatus is disposed between the plurality of vapor deposition heads. 前記成膜材料噴出部は、
複数の成膜材料の蒸気を前記被処理基板へ向けてそれぞれ噴出する複数の蒸着ヘッドを備え、
前記捕捉部は、
略矩形状をなし、対向している複数の板部を備え、該複数の板部は、一辺が前記複数の前記蒸着ヘッドよりも前記被処理基板側に位置するように、前記複数の前記蒸着ヘッドの間に配されている
ことを特徴とする請求項１又は請求項２に記載の成膜装置。 The film forming material ejection part is
A plurality of vapor deposition heads each ejecting vapors of a plurality of film forming materials toward the substrate to be processed;
The capturing part is
A plurality of plate portions that are substantially rectangular and are opposed to each other, and the plurality of plate portions are arranged such that one side is positioned closer to the substrate to be processed than the plurality of vapor deposition heads. The film forming apparatus according to claim 1, wherein the film forming apparatus is disposed between the heads. 前記複数の板部は、
前記被処理基板側の部位が直近の前記蒸着ヘッド側へ曲がっている
ことを特徴とする請求項６に記載の成膜装置。 The plurality of plate portions are:
The film forming apparatus according to claim 6, wherein a portion of the substrate to be processed is bent toward the nearest deposition head.
JP2011031215A 2011-02-16 2011-02-16 Deposition apparatus Withdrawn JP2012169225A (en)

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