TW201247913A - Film forming apparatus - Google Patents

Abstract

A film forming device is provided to prevent the separation of film forming materials between a processing substrate and the upper side of a processing chamber by arranging capturing units between first to sixth deposition heads and on both sides of a transfer direction. A film forming device includes a processing chamber(11) and a film forming material spraying unit(13). The processing chamber receives a substrate(G) and includes a capturing unit(16). The film forming material spraying unit sprays steam of the film forming material to a substrate. A capturing unit captures the film forming materials separated from the substrate and includes a plurality of gaps or holes to input the film forming materials from the substrate.

Description

[Technical Field] The present invention relates to a film forming apparatus including a film forming material discharge portion that ejects vapor of a film forming material toward a substrate to be processed. [Prior Art] Patent Document 1 discloses a film forming skirt in which an organic EL element is produced by a steam mirror method. The film forming apparatus is provided with a processing chamber for accommodating a substrate to be processed such as a glass substrate, and a gas generating portion for generating a film forming material I is disposed outside the processing chamber. The inside of the processing chamber is provided, and the material ejecting portion is connected to the vapor generating portion by a pipe, and the vapor of the material generated by the steam generating portion is ejected toward the surface substrate. The film forming material ejection portion has a plurality of vapor deposition lenses arranged in parallel to eject different film forming materials. ° Prior Art Document Patent Document 1 International Publication No. 2008/066103 Booklet [Invention] The applicant of the present application found the following problem: the film-forming material sprayed from the vapor deposition head will be in the substrate to be treated and the processing chamber or other steaming. The plating heads are rebounded, and the film forming material is attached to the portions which are not to be vapor-deposited; or the vapors from the respective film forming material ejection portions are mixed and mixed into the adjacent film as impurities. Further, the film formation described in Patent Document 1 does not disclose the problem that the ruthenium material rebounds, and the composition of 201247913 for solving the problem. The hair date H of the hair is provided with: a reverse; and a film forming material is a film forming material; = = a substrate is ejected; and is characterized in that it is within the processing chamber A capturing portion that captures a film forming material that rebounds from the substrate by the hoof (4).

According to the invention, the film-forming material sprayed from the vapor deposition head can be prevented from rebounding between the substrate to be processed and the processing chamber or other heads, and the film-forming material can be attached to the portion which is not to be vapor-deposited, or can be prevented from being formed. The vapor of the film material discharge portion is mixed and mixed into the adjacent film as impurities. [Embodiment] Hereinafter, the present invention will be described in detail based on the drawings showing the embodiments. Fig. 1 is an explanatory view schematically showing an example of a configuration of a film forming system of the embodiment. The film forming system of the present embodiment includes a loader 90, a transfer chamber 91, a film forming apparatus 1, a transfer chamber 92, an etching device 93, and a transfer which are connected in series in the transport direction of the substrate G to be processed (see FIG. 3). A chamber 94, a sputtering device 95, a transfer chamber 96, a CVD device 97, a transfer chamber 98, and an unloader 99. The loader 90 is a device for carrying a substrate G to be processed (for example, a glass substrate G on which an ITO layer is formed in advance) into a film formation system. The transfer chambers 91, 92, 94, 96, 98 are devices for receiving the substrate G to be processed between the respective processing devices. 5 201247913 The film forming apparatus i is used to form a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a green light emitting layer, an electron transport layer, and even an electron on the substrate G to be processed by a vacuum evaporation method. A device for injecting layers. The details will be described later. The etching device 93 is for adjusting the shape of the organic layer to a predetermined shape. The sputtering apparatus 95 is a device for sputtering a metal layer such as silver Ag, a town Mg/silver Ag alloy or the like on the electron transport layer by using a pattern cover. η, Vt>l is a device in which a sealing layer formed of a nitride film or the like is formed by a CVD method or the like to seal various films formed on a glass substrate. The unloader 99 is used to be FIG. 2 is a perspective view schematically showing a configuration example of the film forming apparatus 1, and FIG. 3 is a side view showing a configuration example of the film forming apparatus 1. FIG. Fig. 3 is a cross-sectional view taken along the line IV-IV of Fig. 3. The film forming apparatus includes a processing chamber 11 including a substrate G to be processed, and a film forming material which ejects a strip of a film forming material onto the substrate G to be processed. The processing unit 11 is formed in a hollow substantially rectangular parallelepiped shape in which the conveying direction is the longitudinal direction, and is composed of IS, stainless steel, etc. on the one end side in the longitudinal direction of the processing chamber 11 (the back side in Fig. 2) The surface of the transfer substrate na for inserting the substrate G to be processed into the processing chamber 11 is formed on the other end side in the longitudinal direction (the front side surface in FIG. 2) to move the portion 6 201247913 out of the processing chamber. Move the exit nb. Move the entrance (1) Ϊ move the exit llb with respect to the mover The long side of the orthogonal direction = the slit shape is the same as the long side direction of the carry-in port 11a and the carry-out port nb: hereinafter, the long side of the carry-in port 11a and the carry-out port ub is referred to as a horizontal direction, and The direction of the transverse direction is orthogonal to the direction of transport

G: The direction is down. Further, exhaust gas = C is formed in an appropriate portion of the storage chamber, and the vacuum pump 15 disposed outside the processing chamber U is connected to the exhaust hole Uc via the exhaust gas = 4. The inside of the king to 11 is decompressed to a predetermined pressure such as ι〇_2ρ& by driving the vacuum fruit 15. The bottom of the inside of the processing chamber 11 is provided with a transporting device 12 that transports the substrate G to be processed from the side of the inlet 11a to the side of the outlet llb. The transport device 12 includes a guide 12a that is disposed along the longitudinal direction of the bottom of the processing chamber u, and the moving member 12b is guided to the guide 12a so as to be along the transport direction, that is, the long side. The support table 12c is disposed at an upper end portion of the moving member 12b, and supports the substrate G to be processed so as to be substantially parallel with respect to the bottom portion. Inside the support table 12c, an electrostatic chuck for holding the substrate G to be processed, a heater for holding the temperature of the substrate G to be processed, a refrigerant tube, and the like are provided. Further, the support table 12c is moved by a linear motor. Further, a film forming material discharge portion 13 for forming a film on the substrate G to be processed by a vacuum deposition method is provided in the upper portion of the processing chamber 11 at a substantially central portion in the transport direction. The film forming material ejecting portion 13 is configured to spray a plurality of film forming material vapors toward the substrate G to be processed, respectively, to a plurality of heads (hereinafter, the second steaming head 13b of the steaming hole), steaming = The fourth steaming heart of the layer is ^^^, the fifth 瘵 plating i3e, and the vapor-deposited electronic 耠-like 二 二 二 二 二 二 二 二 二 二 二 二 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ·^ Ϊ i material ejection unit 13. Fig. 4 is a representative view of Fig. 2 from the & to the tth head... the connection piping is called, but the other 2nd clay is down... inspection head (10) and steam generation = steam The generating unit 17 includes a container 17 &

G structure (7). The heating mechanism 17b is formed by a layering method, and the material UC is heated by the electric power supplied by the power source. ===7: The heat is called the organic film forming material; (4) , heat far away from ancient private ~ I oxygen. Further, the container i7a is provided with a supply tube 18b for supplying a transport gas composed of a rare gas such as Ar to the substrate G to be processed, and a transporting gas supply tube 18b for each of the transporting gas supply tubes 18b. And the air volume adjusting valves 18c and 18d. In addition, for the non-rrirf; to heat _18a, the gas into the (four) tree" and Qian Shuo 13a. The heater is used to prevent the vapor of the membrane material 17c from adhering to the tube. The film-forming material 17c of the 8 201247913 14 supply tube tear It is supplied to the container 仏 and is supplied to the first vapor deposition head by the steam generating unit 7 from the steam generating unit 7 through 18a. The discharge, itrr 2 3 vapor discharge pipe 186 is provided with the steam 幵 3 In addition, the steam discharge pipe 18e is heated to be installed in the first row of the shovel: 2, the hole discharge "8e can be the bottom of the i-steam head 13a =::=__ base" The injection == is linear in the orthogonal direction ^==^; ^7 is sent to two = not limited 'as long as it can be substantially uniform, the device i in the processing chamber contains the material ejection portion 13 The film-forming material rebounded by the sheet G is placed on the i-th to sixth steam-forging heads (10); the number = the upstream side of the direction, and the sixth steam (four) 13f:::. Since each of the capturing units 16 has the same configuration, the month of:: is mainly explained for the capturing unit disposed between the second steaming head 13a and the second lower portion. & 13b Fig. 6 is a cross-sectional view showing the capturing portion of the embodiment. The capturing unit 16 has a plurality of gaps 16c into which the film forming material which is ejected from the film forming material ejecting unit: 201247913 and which is bounced on the substrate G to be processed can enter. Specifically, the capturing unit 16 has a partition wall stealing (separating the first vapor deposition head 13a from the second vapor head 1bb) and a plurality of plate portions 16b (facing in a substantially rectangular shape), and the plurality of plate portions (10) The side between the i-th and second vapor-deposited heads 13a and 13b is disposed such that the side on the side of the substrate G to be processed is located closer to the substrate (4) to be processed than the second turn i3M3b. Between the shackles and the scams. By the opposite plurality of plate portions, the lower portion of the partition wall 16 & (i.e., the partition wall i6a is in the processed substrate G _ portion) (d) has substantially parallel to the support table 12c, The i to the sixth steaming heads 13a to 13f are oriented in the direction of the - direction, and are substantially vertically protruded. Relative to the bottom below

More specifically, the lateral direction of the first portion 13a, 13b of the capturing portion 1 A is approximately 1 in the horizontal direction and the second portion, i.e., the plate portion, is at the center of the normal direction. The thickness of the capturing portion 16 (also referred to as the distance between the one end side plate portion 16b of the m-gate and the other plate portion 16b) is defined as D and the other side of the lower side, even if the following formula is satisfied . When it is satisfied and does not collide with the second steaming head of the capturing unit 16, the mouth is shot.

GD^2xdxH/Ad where 201247913 d: the lower side of the plate portion 16b (that is, the distance H between the side of the substrate g side to be processed and the substrate G to be processed: the first vapor deposition head in the normal direction and the first steamed money The distance ' & Δd of the head portion 16b: below the plate portion 16b in the normal direction of the substrate G to be processed

The distance between the side (i.e., one side of the substrate G side to be processed) and the lower end portion of the first vapor deposition head D 〇 Fig. 7 is an explanatory view showing the action of the capturing portion 16. The film-forming material ejected from the second Q-head 13b is rebounded from the substrate to be processed, and enters between the plurality of plate portions Mb constituting the capturing portion 16. In Fig. 7, the straight line extending from the 2+th xenon head 13b shows the formation of the film forming material ejected from the second vapor head 13^. The film forming material entering between the plate portions 16b is repeatedly bounced between the plate portions 16b, and adheres to the plate portion 16b. That is, the film forming material is captured by the capturing portion 16. Fig. 8 is a side view schematically showing an experimental matter for explaining the action of the capturing portion 16. As shown in FIG. 8A, the substrate 2 and the second substrate 3 of the prepared experimental apparatus 1 are arranged side by side, and the vapor of the film forming material sprayed from the tantalum head (not shown) is not directly attached to the second substrate. The protection board 4 is configured in a manner. Then, the film forming material 蒗 2 substrate 2 is ejected. Next, the adhesion amount of the film-forming material adhered to each of the ρ substrate 2 and the first sheet was measured, and the ratio of the adhesion amount was calculated. As a result of the experiment, the ratio of the adhesion amount was 〇43. In other words, when the amount of deposition of the film-forming material adhering to the first substrate 2 is 丨, the amount of adhesion of the film-forming material adhering to the second substrate 3 is 〇43. From this experimental result 201247913, a part of the film-forming material of the substrate 2 and the 2 spray will rebound between the other side = and the second substrate 3 and the figure 8A have the same "8 B" The prepared experimental device roll is the same as that of the core plate 5 and the embodiment of the present embodiment, and the film forming material vapor is directed toward the first base = the film forming material, and the ratio of the adhesion amount is 0. 37.里〇匕a

From this experimental result, we know that @4σ #. (2) The function of capturing the material from the first substrate and the material to prevent the film material from rebounding.

The present invention can prevent the film-forming material sprayed from the steaming table from rebounding between the substrate G to be processed and the processing chamber u or the sixth to sixth steaming heads 13a to 13f, and is attached to the portion to be vapor-deposited. The film material or the vapors from the first to sixth vapor deposition heads 13a to 13f are mixed and mixed into the adjacent film as impurities. Therefore, it is possible to prevent vapor deposition of the other kinds of film-forming materials when steam-forging the two kinds of film-forming materials, and further, in the present embodiment, the capturing portion of the plurality of plate portions 16b is provided at the lower end portion of the partition wall 16a. 16. However, the capturing unit 16 may be configured only by the plurality of plate portions 16b. Further, although an example in which the catching plates 16 are disposed between the first to sixth vapor deposition heads 13a to 13f and both sides in the transport direction will be described, the catching plate 16 may be disposed at another portion to be processed. For example, the capture plate 16 can also be disposed on the upper portion of the processing chamber. In this case, it is possible to prevent the film forming material 12 201247913 from bounce between the substrate G to be processed and the upper portion of the processing chamber. Further, a catching plate 16 may be provided on the inner side wall and the bottom of the processing chamber. Further, although the capturing plate 16 in which the plurality of plate portions 16b are arranged at equal intervals has been described, the interval between the plate portions 16b may be different. When the interval between the plate portions 16b is non-periodic, it is possible to capture the film forming material more efficiently. Further, in the present embodiment, the capturing portion that mainly captures the organic film forming material is described. However, the capturing portion of the present embodiment can also be applied to a film forming device that forms an inorganic film forming material. (Variation 1) The film forming apparatus 1 according to the first modification differs from the embodiment only in the configuration of the capturing unit 116, and the following mainly points out the above differences. Fig. 9 is a side cross-sectional view showing a configuration example of one of the capturing portions 116 of the first modification. Similarly to the embodiment, the capturing unit 116 of the first modification has the partition wall 116a and the plurality of plate portions 116b, and the plurality of plate portions 116b constitute the gap 116c. The portion of the plurality of plate portions 116b on the side of the substrate G to be processed is bent toward the side of the first first vapor deposition head 13a or the second vapor deposition head 13b. For example, the portion of the plate portion 116b on the side of the first vapor deposition head 13a is bent toward the first vapor deposition head 13a on the side of the substrate G to be processed, and the plate portion 116b on the side of the second vapor deposition head 13b is on the substrate G to be processed. The side portion is bent toward the second vapor deposition head 13b side. The trap portion 116 disposed between the second to sixth vapor deposition heads 13b to 13f is also configured in the same manner. 13 201247913 In the first modification, the portion of the plate portion 116b on the side of the substrate G to be processed is bent toward the closest first to sixth vapor deposition heads 13a to 13f, so that the substrate G can be more effectively captured and rebounded. Film forming material. (Variation 2) The film forming apparatus 1 according to the second modification differs from the embodiment only in the configuration of the capturing unit 216, and is mainly described below with respect to the difference point. FIG. 1U is an example of the modification of the member. A side cross-sectional view of one of the constituent examples of the D-part z A 〇. Specifically, the capturing unit 216 has a partition wall 216a (separating the first vapor head 13a from the second vapor deposition head 13b) and a plurality of holes 216b (formed on the lower side of the partition wall 216a, that is, the substrate G side to be processed The portion "the film forming material that is ejected from the film forming material ejecting portion 13 and rebounds on the substrate G to be processed can enter". The hole portion 21 is a long hole, and the long side direction is relative to the first! The parallel direction to the sixth steam heads (5) to (3) is orthogonal. The other capturing portions 216 disposed between the second to sixth base heads 13b to 13f are also configured in the same manner. That is, the same effects as those of the embodiment can be achieved. Also: the material St is sprayed by the sixth vapor deposition head, and the film is rebounded between the substrate G to be processed, and the portion where the liquid is not to be steamed is attached to the head and the head is reduced. The long hole is only an example, and it is also available for the 7-mesh and ancient; the capture part of the f-long hole, and the capture part of the only part. / Money-rich round or other shape hole (Modification 3) 201247913 The film formation processing system of Example 3 differs from the embodiment only in the arrangement of the film formation device 301 in the face-down type and the capturing portion 316. Mainly for the above differences. Fig. 11 is a view schematically showing an example of the configuration of one of the film forming apparatuses 301 of the third modification. The film forming apparatus 301 of the third modification has the same processing chamber 11 as that of the embodiment. A film forming material ejecting portion 313 is provided at the bottom of the processing chamber 11. The film forming material discharge portion 313 has first to sixth vapor deposition heads 313a to 313f arranged in the transport direction ,, and a capturing portion 316 is disposed between each of the first to sixth vapor deposition heads 313 & Further, inside the processing chamber U, a transfer device 312 that holds the substrate G to be processed and transports it from the transfer port 11a to the transfer port lib is provided. Fig. 12 is a side sectional view showing a configuration example of one of the capturing portions 316 of the third modification. In the same manner as the embodiment, the capturing portion 316 has a plurality of gaps 316c' which are formed by the film forming material ejecting portion 313 and which are ejected on the substrate G to be processed. Specifically, the capturing & portion 316 has a partition wall 316a (separating the first vapor deposition head 313a from the second vapor deposition head 313b) and a plurality of plate portions 316b (in a substantially rectangular shape, facing each other). The plurality of plate portions 316b are disposed between the first to sixth steaming heads 313a to 313f so that one side of the substrate G side to be processed is located closer to the substrate G to be processed than the first to sixth vapor deposition heads 313a to 313f. The gap 316c is constituted by the opposing plurality of plate portions 316b. More specifically, the upper end portion of the partition wall 316a, that is, the partition wall 316a has a substantially parallel upper surface with respect to the substrate to be processed G or the 15 201247913 transporting device 312 on the side of the substrate G to be processed. The plurality of plate portions 316b face each other so as to be aligned in the same direction as the parallel direction of the first to sixth vapor deposition heads 313a to 313f, and protrude substantially vertically upward from the upper surface. The third modification achieves the same effects as the embodiment. That is, the film forming material sprayed from the first to sixth vapor deposition heads 313a to 313f can be prevented from being processed on the substrate G and the processing chamber 11 or other third to sixth vapor deposition heads.

The rebound between 13a and 13f causes the film-forming material to adhere to the portion which is not to be vapor-deposited. (Variation 4) The film formation processing system according to the fourth modification differs from the embodiment only in the configuration of the capturing unit 416 and the mounting structure to the processing 411. Therefore, the differences will be mainly described below. Fig. 13 is a side sectional view showing a configuration example of one of the capturing portions 4 to 6 of the fourth modification. Similarly, the capturing portion 416 of the fourth modification has the partition wall 416a and the plurality of plate portions 416b in the same manner as the embodiment, and the gap portion 416c is formed by the plurality of plate portions 41A. The inside of the partition wall 416a is provided with a twisting and catching portion. The heating unit 146d is, for example, a dicing device, and the operation of the heating unit is performed by a control unit (not shown), for example, when the film forming process is stopped. Further, the configuration may be such that the heating unit is a manual switch. The σ", switchable material such as the copper trap portion 416 is formed by a surface having good heat conduction 16 201247913. Further, the capturing portion 416 is covered with a material of thermal conductivity. The force 2 has a holding portion 411d which is a method of detaching the catching portion 416. Keep... Tomb in the head °n to the 6th steam head 13a~13f and the 1st 2nd upstream side and the 2nd steaming one

The enthalpy processing system constituted by the timing type can heat the trap portion 416 by being attached to the operation, and the enthalpy material can be evaporated and removed. This m is required to clean the trap portion 416 by removing the trap portion 416 from the processing chamber 411. ―, this =, the holding portion 411d can also be removed from the capturing unit 416 to feed the wet type and wash. The user can install the processing unit A by inserting the wet-cleaning catching portion 416 into the concave portion of the holding portion 4Hd. The upper part. Further, in the case where the film is formed face up, it is preferable to have the configuration of the heating portion 416d and the holding portion 4Ud at the same time. When the film is formed face down, the heating portion 416d is not necessary. Further, a water flow path for cooling the trap portion 416 may be provided inside the partition wall 416a. The film forming material that rebounds on the substrate G to be processed can be more efficiently captured by the cooling trap portion 416. The embodiments disclosed herein are merely illustrative and should not be construed as limiting. The scope of the present invention is not limited to the above, but is intended to cover all modifications within the scope of the invention and the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view schematically showing an example of a configuration of a film formation system of the embodiment. Fig. 2 is a perspective view schematically showing a configuration example of a film forming apparatus. Fig. 3 is a side sectional view schematically showing a configuration example of a film forming apparatus. Figure 4 is a cross-sectional view taken along line IV-IV of Figure 3. Fig. 5 is a bottom view of the first vapor deposition head. Fig. 6 is a side cross-sectional view showing a configuration example of a capturing portion of the embodiment. Fig. 7 is an explanatory view showing the action of the capturing portion. 8A to 8B are side views schematically showing an experimental apparatus for explaining the action of the capturing portion. Fig. 9 is a side cross-sectional view showing a configuration example of one of the capturing portions of the first modification. Fig. 10 is a side cross-sectional view showing a configuration example of a capturing portion of a second modification. Fig. 11 is an explanatory view schematically showing an example of the configuration of a film forming apparatus according to a third modification. Fig. 12 is a side cross-sectional view showing a configuration example of a capturing portion of a third modification. 18 201247913 Fig. 13 is a side cross-sectional view showing an example of the configuration of a capturing unit according to a fourth modification. Main component symbol description Film forming apparatus processing chamber support table Film forming material ejection unit First vapor deposition head Second vapor deposition head Third vapor deposition head Fourth vapor deposition head 5th vapor deposition head 6th vapor deposition head capture unit capture Part of the partition wall portion clearance hole portion to be processed substrate 1 11 12c

13 13a 13b 13c 13d 13e 13f

16,116,216,316 16a, 116a,216a,316a 16b,116b,216a,316a 16b,116b,316b 16c,116c,316c 216b G 19

Claims (1)

201247913 VII. Patent application scope: 1. A film forming apparatus comprising: a processing chamber for accommodating a substrate to be processed, and a film forming material ejecting portion for ejecting a film forming material vapor toward the substrate to be processed; The inside of the processing chamber is provided with a capturing portion that can be formed by capturing a film forming material that is ejected from the film forming material ejecting portion and rebounds from the substrate to be processed. 2. The film forming apparatus of claim 1, wherein the capturing portion has a plurality of gaps in which the film forming material is ejected from the film forming material and the film forming material rebounds from the processed substrate to enter Hole section. 3. The film forming apparatus of claim 1, wherein the capturing portion has a plurality of opposite plate portions. 4. The film forming apparatus of claim 2, wherein the capturing portion is provided with a plurality of opposite plate portions. 5' The film forming apparatus of claim 3 is provided with a support table for supporting the substrate to be processed; the plate portion is disposed so as to face the β-column in a plane direction, the substrate side to be processed The portion of the crucible is curved toward the film forming material discharge portion side. 6. The film forming apparatus of claim 4, wherein the film forming device is provided with a supporting table for supporting the substrate to be processed; and the plate portion is disposed in a plane direction with respect to the "sea support table", which is processed The portion on the side of the substrate is bent toward the side of the film-forming material discharge portion. The film-forming device according to any one of the first to sixth aspects of the invention, wherein the (four) material discharge portion is provided with a plurality of Membrane material 20 201247913 = a plurality of vapor deposition capturing portions that are ejected toward the substrate to be processed are disposed between the plurality of vapor deposition heads. μ 2 , & film forming device according to claim 1 or 2 The film forming material discharge unit includes a plurality of vapor deposition heads for ejecting a plurality of film forming material vapors & the substrate is formed in a substantially rectangular shape and is relatively plural a plate portion; the plurality of plate portions are disposed between the plurality of vapor deposition heads on the side of the substrate to be processed more than the plurality of vapor deposition heads. 9. The device according to claim 8 Where the plurality of plates are at the treated base Closest to the train-side portion of the ore was distilled bending head side. twenty one